CN108101363A - Infrared Ge-Ga-La-S chalcogenide glasses and preparation method thereof in one kind - Google Patents
Infrared Ge-Ga-La-S chalcogenide glasses and preparation method thereof in one kind Download PDFInfo
- Publication number
- CN108101363A CN108101363A CN201711349949.2A CN201711349949A CN108101363A CN 108101363 A CN108101363 A CN 108101363A CN 201711349949 A CN201711349949 A CN 201711349949A CN 108101363 A CN108101363 A CN 108101363A
- Authority
- CN
- China
- Prior art keywords
- glass
- infrared
- temperature
- chalcogenide
- chalcogenide glasses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Glass Compositions (AREA)
Abstract
The invention discloses infrared Ge Ga La S chalcogenide glasses and preparation method thereof in one kind, feature is that its structural formula is 80GeS2‑(20‑x)Ga2S3–xLa2S3, wherein x=1 20, x is molar fraction, and preparation method comprises the following steps：1）It weighs Ge, Ga, La, S raw material and is packaged in vacuum degree after mixing as 10‑4In the closed quartz container of below Pa；2）After carrying out high-temperature fusion to the mixed raw material of encapsulation, immerse distilled water and carry out quick quenching；3）Chalcogenide glass is made annealing treatment, closed quartz container is slowly at the uniform velocity down to room temperature together with chalcogenide glass with the rate of temperature fall of 1 ~ 10 DEG C/min after annealing, infrared Ge Ga La S chalcogenide glasses in obtaining, advantage are that have good permeability, into glass ability and thermal stability.
Description
Technical field
The present invention relates to a kind of infrared optics and device host material, more particularly, to infrared Ge-Ga-La-S in one kind
Chalcogenide glass and preparation method thereof.
Background technology
Chalcogenide glass typically refers to the vitreous material that the compound of the elements such as chalcogen and Ge, As, Ga is formed, and compares
The glass such as oxide and fluoride, chalcogenide glass have lot of advantages, and glass shaping area is wider, usually can be in wider chemistry
Glass is formed in the range of metered proportions, performance is continuous controllable within the specific limits, and to bridge joint anion (S, Se, Te)
Lack or excessive control can also form the glass material with semiconductor property；Its larger ranges of indices of refraction（n=2.1~2.5）
It is made to have very big advantage in rear-earth-doped luminous active application aspect；And the component of chalcogenide glass can have compared with
Big relative atomic mass and weaker chemical bond can form the very low material of phonon energy.The maximum phonon of chalcogenide glass
Energy is substantially less than silicate glass about 1100cm generally between 250 to 500 cm-1-1, fluoride glass about 560cm-1,
Therefore the light of infrared or even far infrared more long wavelength in its transmission can be ensured；In addition, the optical response time of chalcogenide glass it is short,
Intrinsic optic loss is low, nonlinear refractive index is high and is most to have research and potential application at present with unique light sensitive characteristic
One of infrared laser dielectric material of value.
Ge-Ga-S P series glass is the research hotspot in current numerous chalcogenide glasses, mainly including Ge-S, Ge-Ga-S,
Ge-Ga-Sb-S etc..GeS4Glass and As2S3 The performance of glass is similar, into glass ability it is relatively strong, there is good thermal stability, and
And the chalcogenide glass containing Ge generally has higher glass transformation temperature.However the glass transformation temperature of Ge-Ga-S chalcogenide glasses
Too small with starting recrystallization temperature gap, softening temperature is difficult to control, and also has many problems for drawing optical fiber etc..Current skill
With the preparation of GeGaS chalcogenide glasses, without crystallization optical fiber, also there is certain difficulty under art is horizontal.Thus when previous urgently to be resolved hurrily
Problem be optimize Ge-Ga-S glass thermal stability.It around these problems, is optimized, needed by adding other elements
Developing new multicomponent glass improves its performance.
Document（Referring to A.K. Mairaj, M.N. Petrovich, Y.W. West et.al., " Advances in
Gallium Lanthanum Sulphide Glass for Optical Fibre and Devices ", Photonics
West Boston, 6-8 November 2000, SPIE Fiber Optic Sensor Technology II Part B
Vol. 4204 pp.278-285）It is open to have reported a kind of gallium lanthanum sulphur（Ga2S3-La2S3）Glass, the glass have wide infrared
Cross scope（0.5~8 μm）, high glass-transition temperature（560℃）, higher Nu Shi hardness（206Kg/mm2）, compared with oxide
The high refractive index of glass（2.48）, good chemical stability, nontoxic and higher rare earth solubility etc., be very suitable for as red
The host material of the infrared optical devices such as outer window, infrared optics waveguide, echelette.But the melting technology of the glass system
Extremely complex, manufacturing cost is higher, and preparing cannot use traditional chalcogenide glass to be melted in sealed silica envelope, this is because
La elements therein can reflect with quartzy tube wall, it is therefore desirable to graphite carbon crucible or special melted mode, Er Qierong
Temperature processed is higher, substantially exceeds 1000 degree, melting process is complicated, and its crystallization initial temperature is differed with the draw temperature of optical fiber
Very little, initial recrystallization temperature（Tx）And glass transition temperature（Tg）Difference（Tx-Tg）Only 110 DEG C, it is caused to be drawn in optical fiber
Easy crystallization during system, thus be difficult to for making infrared optics optical fiber.By adjusting component, La2S3 and Ga is reduced2S3's
Content adds in stable glass network former GeS2, it is prepared into GeS2- Ga2S3-La2S3 chalcogenide glasses possess and gallium lanthanum sulphur
The similar physico-chemical property of glass, and its characteristic temperature is poor（Tx-Tg）180 DEG C to 126 DEG C are significantly increased to, substantially increases the glass
The fibre-optical drawing ability of glass.
A kind of optical fiber Ge disclosed in CN103864296 A patents2S3-Ga2S3-La2S3-La2O3-BiCl3Sulphur system glass
Glass, wherein Ga2S3As the main component that glass is done, and require Ga2S3The content of ingredient is not less than 50, this glass ingredient
The infrared scope that penetrates of glass is determined most as far as 8 μm or so, and is readily incorporated new comprising elements such as O, Cl in its ingredient
Impurity factor, and La2O3It easily reacts at high temperature with quartzy tube wall, causes wall erosion and further impurity
Invasion, be unfavorable for chalcogenide glass stablizes preparation, and due to containing Cl halogens, chemical stability is relatively poor, light
Fibre draw reheat during crystallization and halogen volatilization easily occurs, it is poor to result in the transparency of optical fiber, and refractive index is missed
Difference is larger.
The content of the invention
The technical problems to be solved by the invention, which are to provide, a kind of has good permeability, into glass ability and thermostabilization
Infrared Ge-Ga-La-S chalcogenide glasses and preparation method thereof in property.
Technical solution is used by the present invention solves above-mentioned technical problem：Infrared Ge-Ga-La-S sulphur system glass in one kind
Glass, structural formula 80GeS2-(20-x)Ga2S3–xLa2S3, wherein x=1-20, x are molar fraction.
Its preferred structural formula is 80GeS2-(20-x)Ga2S3–xLa2S3, wherein x=1-10, x are molar fraction.
Its preferred structural formula is 80GeS2-19Ga2S3–La2S3。
Its preferred structural formula is 80GeS2-17Ga2S3–3La2S3。
Its preferred structural formula is 80GeS2-15Ga2S3–5La2S3。
The preparation method of infrared Ge-Ga-La-S chalcogenide glasses, comprises the following steps in above-mentioned：
1）Raw material prepares：Ge, Ga, La, S raw material are weighed according to the raw material proportioning calculated and is uniformly mixed, after then mixing
Raw material be packaged in vacuum degree as 10-4In the closed quartz container of below Pa；
2）High-temperature fusion and quenching：Closed quartz container is heated, high-temperature fusion, heating temperature are carried out to the mixed raw material of encapsulation
For 900 ~ 980 DEG C, heating time for 10 ~ for 24 hours；It is right in -20 ~ 40 DEG C of distilled water to immerse closed quartz container after heating
The high-temperature molten of encapsulation carries out quick quenching in closed quartz container, obtains Ge-Ga-La-S chalcogenide glasses；
3）Annealing and cooling：The chalcogenide glass that closed quartz container is obtained together with inside is made annealing treatment, annealing temperature
It spends for 410 ~ 470 DEG C, annealing time is 3 ~ 8h；After annealing by closed quartz container together with chalcogenide glass with 1 ~ 10
DEG C/rate of temperature fall of min is slowly at the uniform velocity down to room temperature, open infrared Ge-Ga-La-S sulphur system during closed quartz container obtains
Glass.
Step 2）In melting process can 360 degree rotation high temperature rocking furnaces in carry out.Expand rotation angle control
Scope maximizes and realizes being uniformly mixed for molten liquid, and the uniformity of reinforcing glass stoste contributes to the molding stability of glass.
Compared with prior art, the advantage of the invention is that：Present invention firstly discloses infrared Ge-Ga-La-S in one kind
Chalcogenide glass and preparation method thereof, structural formula 80GeS2-(20-x)Ga2S3–xLa2S3, wherein x=1-20, x for mole point
Number, the toxic As elements without traditional chalcogenide glass addition, its preparation method simple possible；The present invention is by environmentally protective La
Element is introduced into Ge-Ga-S chalcogenide glasses, using the high polarization of La elements, to Ge-Ga-S chalcogenide glass network structures
It optimizes, obtained Ge-Ga-La-S chalcogenide glasses have good infrared breathability, into glass ability and physics calorifics
Can, therefore the Ge-Ga-La-S chalcogenide glasses of the present invention have wide application in infrared photo-electric material and devices field.
Description of the drawings
Fig. 1 is comparative example and the glass XRD curves of embodiment 1-3；
Fig. 2 is the infrared H103 resin of glass of comparative example and embodiment 1-3.
Specific embodiment
The present invention is described in further detail below in conjunction with attached drawing embodiment.
First, specific embodiment
Embodiment 1
Infrared Ge-Ga-La-S chalcogenide glasses, structural formula 80GeS in one kind2-19Ga2S3–La2S3, its preparation method includes
Following steps：
1）Raw material prepares：Ge, Ga, La, S raw material are weighed according to the raw material proportioning calculated and is uniformly mixed, after then mixing
Raw material be packaged in vacuum degree as 10-4In the closed quartz container of below Pa；
2）High-temperature fusion and quenching：Closed quartz container is heated, high-temperature fusion, heating temperature are carried out to the mixed raw material of encapsulation
For 950 DEG C, heating time 20h；Closed quartz container is immersed in 15 DEG C of distilled water after heating, closed quartz is held
The high-temperature molten of encapsulation carries out quick quenching in device, obtains Ge-Ga-La-S chalcogenide glasses；Wherein melting process is can 360
It spends in the high temperature rocking furnace of rotation and carries out；
3）Annealing and cooling：The chalcogenide glass that closed quartz container is obtained together with inside is made annealing treatment, annealing temperature
It spends for 455 DEG C, annealing time 5h；After annealing by closed quartz container together with chalcogenide glass with the drop of 5 DEG C/min
Warm rate is slowly at the uniform velocity down to room temperature, opens infrared Ge-Ga-La-S chalcogenide glasses during closed quartz container obtains.
The Ge-Ga-La-S chalcogenide glasses, infrared transmission performance reach optimal, and up to 78%（Thickness of glass is 2mm）.
Embodiment 2
With above-described embodiment 1, difference lies in：In infrared Ge-Ga-La-S chalcogenide glasses structural formula be 80GeS2-17Ga2S3–
3La2S3。
Embodiment 3
With above-described embodiment 1, difference lies in：In infrared Ge-Ga-La-S chalcogenide glasses structural formula be 80GeS2-15Ga2S3–
5La2S3.The physical optics performance of the Ge-Ga-La-S glass is optimal, and glass forming ability is optimal, and thermostabilization is optimal, and Δ T values can
Up to 130 DEG C, infrared breathability is up to 75%.
In addition to the implementation, step 2）During high-temperature fusion, heating temperature can also be 900 DEG C, 980 DEG C or
Any number in 900-980 DEG C；Heating time can also be 10h, for 24 hours or any number in 10-24 h；It can be with
Quartzy ampere bottle is immersed in -20 DEG C, 0 DEG C, 10 DEG C, 20 DEG C, 30 DEG C or 40 DEG C of distilled water and is cooled down；Step 3）Annealing temperature
It can also be 410 DEG C, 470 DEG C of any number annealing times either in 410-470 DEG C can also be in 3h, 8h or 3-8h
Any number；Rate of temperature fall can also be 1 DEG C/min, 2 DEG C/min, 3 DEG C/min, 4 DEG C/min, 6 DEG C/min, 7 DEG C/
Min, 8 DEG C/min, 9 DEG C/min or 10 DEG C/min.
2nd, contrast test
The performance of the Ge-Ga-La-S chalcogenide glasses of testing example 1-3.Alternative Ge-Ga-S chalcogenide glasses are as a comparison case.It is real
The performance for applying a 1-3 and the chalcogenide glass of comparative example is shown in Table shown in 1, Fig. 1 and Fig. 2.
Raw material and proportioning, the performance of 1 embodiment 1-3 of table and comparative example
By table 1 as it can be seen that in Ge-Ga-S chalcogenide glasses introduce La after, glass transformation temperature, recrystallization temperature, thermal stability with
And hardness increases, and and with the raising of La element ratios, glass transformation temperature, recrystallization temperature, thermal stability and hard
Degree increases., whereas if the too high levels of La elements, then cause glass cannot be into glass, excessive La elements and quartz
Tube wall is had an effect, and influences glass shaping and its stability and homogeneity of ingredients, too low, is not had to the performance gain of glass
Any contribution, so the value of La is again between 1-20mol.
By it can be found that good envelope curve is presented in XRD curves, show in Fig. 1 glass sample present it is good into
Glass ability.
By, it can be found that with the addition of La elements, glass infrared transmission performance is significantly improved, by original in Fig. 2
That comes 60% is increased to 75% or so, if La elements are excessively high, glass into cause if glass failure it is infrared cannot penetrate, it is too low if then
The infrared transmission performance of glass cannot be effectively improved, so suggesting X values between 1-20.
The main advantage of Ge-S chalcogenide glasses is that have stronger Ge-S and S-S covalent bonds connection structure, [GeS4]4-It is
There is its essential building blocks relatively good glass to form power, thermal stability and permeability.Half is introduced in this glass system
The Ge-Ga-S glass of the Ga of metal can improve the dissolving power of rare earth ion, and it is into glass ability, thermal stability, optical property,
Chemical stability increases, and is ideal fiber amplifier glass material, but its fibre-optical drawing temperature and crystallization
Temperature difference is smaller, causes the easy crystallization of fiber draw process, therefore its thermal stability, rheological characteristic are still to need what is solved to ask
Topic, the present invention add the La elements of harmless high polarization in this glass system, and with the addition of La elements, La elements are broken
Ge-Ge keys are changed into more GeS4Tetrahedron element, optimizes the three-dimensional net structure of glass, thermostabilization, into glass with
And infrared breathability has further raising.Therefore, the present invention is retaining glass forming ability of Ge-Ga-S chalcogenide glasses etc. mainly
On the premise of advantage, every physical heat stability energy of glass is not only increased using the high polarization of La elements, and significantly
Improve the infrared transmission performance of Ge-Ga-S chalcogenide glasses.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
Various corresponding changes and deformation, but these corresponding changes and deformation can be made according to the present invention by knowing those skilled in the art
The protection domain of the claims in the present invention should all be belonged to.
Claims (7)
1. infrared Ge-Ga-La-S chalcogenide glasses in one kind, it is characterised in that：Its structural formula is 80GeS2-(20-x)Ga2S3–
xLa2S3, wherein x=1-20, x are molar fraction.
2. infrared Ge-Ga-La-S chalcogenide glasses in one kind according to claim 1, it is characterised in that：Its structural formula is
80GeS2-(20-x)Ga2S3–xLa2S3, wherein x=1-10, x are molar fraction.
3. infrared Ge-Ga-La-S chalcogenide glasses in one kind according to claim 1, it is characterised in that：Its structural formula is
80GeS2-19Ga2S3–La2S3。
4. infrared Ge-Ga-La-S chalcogenide glasses in one kind according to claim 1, it is characterised in that：Its structural formula is
80GeS2-17Ga2S3–3La2S3。
5. infrared Ge-Ga-La-S chalcogenide glasses in one kind according to claim 1, it is characterised in that：Its structural formula is
80GeS2-15Ga2S3–5La2S3。
6. it is a kind of according to any one of claim 1-5 in infrared Ge-Ga-La-S chalcogenide glasses preparation method,
It is characterized in that comprising the following steps：
1）Raw material prepares：Ge, Ga, La, S raw material are weighed according to the raw material proportioning calculated and is uniformly mixed, after then mixing
Raw material be packaged in vacuum degree as 10-4In the closed quartz container of below Pa；
2）High-temperature fusion and quenching：Closed quartz container is heated, high-temperature fusion, heating temperature are carried out to the mixed raw material of encapsulation
For 900 ~ 980 DEG C, heating time for 10 ~ for 24 hours；It is right in -20 ~ 40 DEG C of distilled water to immerse closed quartz container after heating
The high-temperature molten of encapsulation carries out quick quenching in closed quartz container, obtains Ge-Ga-La-S chalcogenide glasses；
3）Annealing and cooling：The chalcogenide glass that closed quartz container is obtained together with inside is made annealing treatment, annealing temperature
It spends for 410 ~ 470 DEG C, annealing time is 3 ~ 8h；After annealing by closed quartz container together with chalcogenide glass with 1 ~ 10
DEG C/rate of temperature fall of min is slowly at the uniform velocity down to room temperature, open infrared Ge-Ga-La-S sulphur system glass during closed quartz container obtains
Glass.
7. it is according to claim 6 it is a kind of in infrared Ge-Ga-La-S chalcogenide glasses preparation method, it is characterised in that：Step
Rapid 2）In melting process can 360 degree rotation high temperature rocking furnaces in carry out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711349949.2A CN108101363A (en) | 2017-12-15 | 2017-12-15 | Infrared Ge-Ga-La-S chalcogenide glasses and preparation method thereof in one kind |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711349949.2A CN108101363A (en) | 2017-12-15 | 2017-12-15 | Infrared Ge-Ga-La-S chalcogenide glasses and preparation method thereof in one kind |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108101363A true CN108101363A (en) | 2018-06-01 |
Family
ID=62217244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711349949.2A Pending CN108101363A (en) | 2017-12-15 | 2017-12-15 | Infrared Ge-Ga-La-S chalcogenide glasses and preparation method thereof in one kind |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108101363A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116107100A (en) * | 2022-12-29 | 2023-05-12 | 暨南大学 | Tunable super-structured surface based on total sulfur material and construction method thereof |
| CN116573854A (en) * | 2023-04-23 | 2023-08-11 | 宁波大学 | High-concentration rare earth doped infrared chalcogenide glass and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216753A (en) * | 1997-11-04 | 1999-05-19 | 三星电子株式会社 | Ge-Ga-S-based glass composition having light amplifying characteristic and apparatus for optical communications using the same |
| CN101412583A (en) * | 2008-11-13 | 2009-04-22 | 复旦大学 | Dysprosium-doped chalcogenide glass and preparation thereof |
| CN103864297A (en) * | 2014-03-26 | 2014-06-18 | 南京信息工程大学 | Intermediate infrared optical glass for fine molding and molding |
| CN104649578A (en) * | 2015-03-04 | 2015-05-27 | 宁波大学 | Copper-doped Ge-Ga-S chalcogenide glass and preparation method thereof |
-
2017
- 2017-12-15 CN CN201711349949.2A patent/CN108101363A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216753A (en) * | 1997-11-04 | 1999-05-19 | 三星电子株式会社 | Ge-Ga-S-based glass composition having light amplifying characteristic and apparatus for optical communications using the same |
| CN101412583A (en) * | 2008-11-13 | 2009-04-22 | 复旦大学 | Dysprosium-doped chalcogenide glass and preparation thereof |
| CN103864297A (en) * | 2014-03-26 | 2014-06-18 | 南京信息工程大学 | Intermediate infrared optical glass for fine molding and molding |
| CN104649578A (en) * | 2015-03-04 | 2015-05-27 | 宁波大学 | Copper-doped Ge-Ga-S chalcogenide glass and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116107100A (en) * | 2022-12-29 | 2023-05-12 | 暨南大学 | Tunable super-structured surface based on total sulfur material and construction method thereof |
| CN116107100B (en) * | 2022-12-29 | 2023-12-29 | 暨南大学 | Tunable super-structured surface based on total sulfur material and construction method thereof |
| CN116573854A (en) * | 2023-04-23 | 2023-08-11 | 宁波大学 | High-concentration rare earth doped infrared chalcogenide glass and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tran et al. | Heavy metal fluoride glasses and fibers: a review | |
| EP0739863B1 (en) | Transparent glass-ceramics | |
| US7844162B2 (en) | Method for fabricating IR-transmitting chalcogenide glass fiber | |
| AU5597698A (en) | Transparent oxyfluoride glass-ceramic composition and process for making | |
| JPH0769673A (en) | Wavelength upward-conversion transparent glass ceramics and production thereof | |
| CN109384394A (en) | A kind of high non-linearity low-loss bismuth tellurite glasses and optical fiber and preparation method thereof | |
| US6128429A (en) | Low phonon energy glass and fiber doped with a rare earth | |
| CN108101363A (en) | Infrared Ge-Ga-La-S chalcogenide glasses and preparation method thereof in one kind | |
| CN103848570B (en) | A kind of high refractive index mid-infrared light glass and preparation method thereof | |
| US4183620A (en) | Joint doped porous glass article with high modifier concentrations | |
| CN108892375B (en) | Silicon silicate glass and preparation method thereof | |
| US9994478B2 (en) | Alkali selenogermanate glasses | |
| US9981870B2 (en) | Non-stoichiometric alkaline earth chalcogeno-germanate glasses | |
| CN103864296B (en) | A kind of infrared optical fiber chalcogenide glass and preparation method thereof | |
| CN105016618B (en) | A kind of near-infrared luminous bismuth doping multicomponent glass and preparation method thereof | |
| CN112551887B (en) | Infrared germanium antimonate glass and preparation method thereof | |
| CN114956553A (en) | Holmium-doped chalcogenide glass and preparation method thereof | |
| CN102351423A (en) | Tellurite glass with low thermal expansion and high thermal stability and preparation method thereof | |
| JP2742703B2 (en) | Low melting glass composition | |
| US3188216A (en) | Glass containing strontium and gallium compounds | |
| KR102724410B1 (en) | Germanate system oxide glasses with high refractive index and low glass transition point in mid-infrared and the manufacturing method of the same | |
| CN102515514B (en) | Transparent tellurate glass | |
| Jiang et al. | Fluorophosphate cladding glasses for fluoride glass fibers | |
| CN113800761B (en) | Photon darkening resistant silicate glass, preparation method and preparation of single-clad optical fiber | |
| Marzuki et al. | Thermal Stability of ZnO/Tm2O3 Substitution on Tellurite-Zinc-Bismuth-Sodium (TZBN) Glasses |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180601 |
|
| RJ01 | Rejection of invention patent application after publication |