CN108099435B - Counter opal structure anti-counterfeiting transfer printing film - Google Patents
Counter opal structure anti-counterfeiting transfer printing film Download PDFInfo
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- CN108099435B CN108099435B CN201711377678.1A CN201711377678A CN108099435B CN 108099435 B CN108099435 B CN 108099435B CN 201711377678 A CN201711377678 A CN 201711377678A CN 108099435 B CN108099435 B CN 108099435B
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- layer
- transfer printing
- counterfeiting
- film
- photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/025—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet
- B41M5/03—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet by pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
- B41M3/14—Security printing
- B41M3/144—Security printing using fluorescent, luminescent or iridescent effects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/025—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet
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- Printing Methods (AREA)
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Abstract
The present invention relates to a kind of functional counter opal structure anti-counterfeiting transfer printing films, belong to concrete application of the vulcanization ag nano-cluster photonic crystal in anti-counterfeit field of counter opal structure.Anti-counterfeiting transfer printing film of the invention, including assembling substrate, transfer printing layer, which is characterized in that further include vulcanization ag nano-cluster layer of photonic crystals；Wherein, the layer of photonic crystals has identical three-dimensional appearance security pattern between assembling substrate and the transfer printing layer in the same position of the layer of photonic crystals and transfer printing layer.Present invention incorporates the property of silver sulfide quantum dot and photonic crystal, it is prepared for the vulcanization ag nano-cluster photonic crystal transfer film with the counter opal structure of anti-counterfeiting performance.Have more excellent performance compared to silver sulfide quantum dot by the photonic crystal that vulcanization ag nano-cluster is assembled into: fluorescence property is enhanced, and excitation peak is blue shifted to 700nm.After being irradiated by purple light, the red with reflecting feel is showed.
Description
Technical field
The present invention relates to a kind of functional counter opal structure anti-counterfeiting transfer printing film, the silver sulfide for belonging to counter opal structure is received
Concrete application of the rice cluster photonic crystal in anti-counterfeit field.
Background technique
Photonic crystal refers to what the different material of dielectric constant (refractive index) was arranged to make up in space periodicity.Photonic crystal
It is most essential to be characterized in forbidden photon band and photon local.Forbidden photon band can control light in propagation wherein, and defect state
The property of forbidden photon band can be influenced by introducing, be integrated photoelectricity, integreted phontonics, optic communication a kind of key basic material.
In recent years, the regulation with people to semiconductor material microscopic dimensions and surface modification, the vulcanization silver content prepared
Sub-, near infrared region, there are higher fluorescence intensities.Silver sulfide quantum dot has following common advantageous property: vulcanization silver content
Son point preparation method is simple, and raw material is easy to get, so that production cost be made to substantially reduce；It is with good biocompatibility and low toxicity
Property, it can apply in conjunction with its good luminosity in imaging biological cells；On the whole, silver sulfide quantum dot is in energy correlation
Device, environmental correclation application, biological related fields and composite material related fields.
Silver sulfide quantum dot and photonic crystal are combined, so that silver sulfide quantum dot is transformed into the solid-state of periodic structure, more
Be conducive to post-process.Different periodic structures has different photon band gaps.Silver sulfide quantum dot as a kind of photoelectric material,
Be just provided with after photon band gap regulation light property.Silver sulfide quantum dot and photonic crystal are combined and prepare different band gap
Silver sulfide quantum dot photonic crystal, not only inherit the original advantageous property of silver sulfide quantum dot well, while passing through light
The regulation of sub- crystal bandgap makes silver sulfide quantum dot photonic crystal show the property more excellent compared to silver sulfide quantum dot
Matter enhances the electron transfer efficiency etc. in photoelectrochemical process such as the enhancing of fluorescence property.
Summary of the invention
The purpose of the present invention is to provide a kind of counter opal structure anti-counterfeiting transfer printing films.
In order to achieve the above objectives, the invention provides the following technical scheme: a kind of counter opal structure anti-counterfeiting transfer printing film, including
Assemble substrate, vulcanization ag nano-cluster layer of photonic crystals, transfer printing layer；Wherein, layer of photonic crystals is located at assembling substrate and transfer printing layer
Between, coining has the security pattern of identical three-dimensional appearance on layer of photonic crystals and transfer printing layer.
Further, vulcanization ag nano-cluster layer of photonic crystals of the invention is close-packed structure, and close-packed structure makes this
The optical functional materials of invention issue fluorescence, and have gloss.
Further, the partial size for vulcanizing ag nano-cluster is 180-300nm, so that layer of photonic crystals is 400- with wavelength
The gloss of the near-infrared of 900nm, visible light and purple light.
Further, assembling substrate is polyethylene terephthalate thin film, polypropylene film, polyethylene film, poly- second
Enol film, polycaprolactone membrane.It assembles substrate and selects resistance to highly basic, anti-oxidant, the preferable thin polymer film of chemical stability, with
It avoids being corroded in subsequent the step of preparing counter opal structure vulcanization ag nano-cluster layer of photonic crystals by template remover.
Further, transfer printing layer is made of UV resin predecessor.
Further, transfer film provided by the invention further includes release between assembling substrate and layer of photonic crystals
Layer.Interface performance of the release layer to adjust assembling substrate.When photonic crystal lotion is in release layer surface or assembling substrate surface
After forming layer of photonic crystals, there can be stickiness in photonic crystal layer surface, and stereoscopic is formed in a manner of ultraviolet-crosslinkable
Pattern plane.Meanwhile the release layer by having stickiness, so that there is good adherence between layer of photonic crystals and printable fabric,
And the stereoscopic pattern face after solidifying has good wearability, resistance to scraping, and then obtains transfer film of the invention.
Further, the surface tension coefficient of release layer is between 28-58dyn/cm, and thickness is between 2-20 μm.So that release
Binding force between layer and layer of photonic crystals is greater than release layer and assembles the binding force between substrate, to transfer subsequent
Assembling substrate is removed in journey.
Further, release layer of the invention is made of wax mould release.The resistance to highly basic of wax mould release, so as not to it is of the invention
Release layer is cleared up during subsequent removal photonic crystal template by strong basicity template remover.
Further, specifically answering for above-mentioned vulcanization ag nano-cluster photonic crystal anti-counterfeiting transfer printing film is also disclosed in the present invention
With, comprising: printing substrate is provided, printing substrate is incorporated on transfer printing layer, and substrate and release layer will be assembled from photon crystalline substance
It is removed on body layer.
The beneficial effects of the present invention are: present invention incorporates the properties of silver sulfide quantum dot and photonic crystal, are prepared for
The vulcanization ag nano-cluster photonic crystal transfer film of counter opal structure with anti-counterfeiting performance.It is assembled by vulcanization ag nano-cluster
At photonic crystal there is more excellent performance compared to silver sulfide quantum dot: fluorescence property is enhanced, and excitation peak is blue
Move to 700nm.After being irradiated by purple light, the red with reflecting feel is showed.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention and the accompanying drawings.
Detailed description of the invention
Fig. 1 is vulcanization ag nano-cluster fluorescence spectra.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is not intended to limit the scope of the invention for illustrating the present invention.
Embodiment 1
In the present embodiment, assembling substrate is polyethylene film.
By wax mould release be directly coated at this assembling substrate surface, after solidification assembling substrate surface formed it is release
Layer；Vulcanize ag nano-cluster and be arranged in ordered structure in release layer surface self-organization, forms the photonic crystal of one layer of grey color
Layer, about 5-20 μm of thickness, so that obtaining has three layers of substrate (polyethylene film)/release layer/layer of photonic crystals of assembling compound
Film；Photonic crystal layer surface is coated with UV resin transfer layer, and coining has identical solid on layer of photonic crystals and UV resin layer
The security pattern of appearance；Printing substrate is provided, printing substrate is incorporated on transfer printing layer, and substrate and release layer will be assembled certainly
It is removed on layer of photonic crystals.Printing substrate is attached into the glue surface in transfer printing layer, and with thermoprinting die within about 1 second time, with temperature
100 DEG C of degree and 3kg pressure are stamped on assembling base, and the photon molecule layer of three-dimensional appearance part is transferred in printing substrate；
Thermoprinting die is removed, and assembling substrate and release layer are removed from layer of photonic crystals, obtains that there is fluorescence falsification preventing pattern
Printing substrate.With purple light excited, above-mentioned fluorescence falsification preventing pattern shows the red with reflecting feel, as shown in Figure 1, its red is glimmering
The corresponding vulcanization ag nano-cluster fluorescence spectrum 700nm of light.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (5)
1. a kind of counter opal structure anti-counterfeiting transfer printing film, including assembling substrate, transfer printing layer, which is characterized in that further include silver sulfide
Nanocluster layer of photonic crystals；Wherein, for the layer of photonic crystals between assembling substrate and the transfer printing layer, the photon is brilliant
Coining has the security pattern of identical three-dimensional appearance on body layer and transfer printing layer；The anti-counterfeiting transfer printing film further includes between the assembling
Release layer between substrate and layer of photonic crystals；The surface tension coefficient of the release layer between 28-58dyn/cm, thickness between
2-20μm；The release layer is made of wax mould release.
2. anti-counterfeiting transfer printing film according to claim 1, which is characterized in that the layer of photonic crystals is vulcanization ag nano-cluster
Close-packed structure, the close-packed structure makes the anti-counterfeiting transfer printing film issue fluorescence, and has gloss.
3. anti-counterfeiting transfer printing film according to claim 1, which is characterized in that the partial size of the vulcanization ag nano-cluster is 180-
300nm, so that gloss of the layer of photonic crystals with near-infrared, visible light and purple light that wavelength is 400-900nm.
4. anti-counterfeiting transfer printing film according to claim 1, which is characterized in that the assembling substrate is poly terephthalic acid second two
One of ester film, polypropylene film, polyethylene film, polyvinyl alcohol film, polycaprolactone membrane.
5. anti-counterfeiting transfer printing film according to claim 1, which is characterized in that the transfer printing layer is made of UV resin predecessor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711377678.1A CN108099435B (en) | 2017-12-19 | 2017-12-19 | Counter opal structure anti-counterfeiting transfer printing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711377678.1A CN108099435B (en) | 2017-12-19 | 2017-12-19 | Counter opal structure anti-counterfeiting transfer printing film |
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| Publication Number | Publication Date |
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| CN108099435A CN108099435A (en) | 2018-06-01 |
| CN108099435B true CN108099435B (en) | 2019-10-15 |
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| CN201711377678.1A Active CN108099435B (en) | 2017-12-19 | 2017-12-19 | Counter opal structure anti-counterfeiting transfer printing film |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101870866A (en) * | 2010-05-19 | 2010-10-27 | 合肥学院 | Preparation method of inverse opal structure fluorescent thin film for detecting ultra-trace TNT (Trinitrotoluene) steam |
| CN105525343A (en) * | 2015-12-18 | 2016-04-27 | 中国科学院理化技术研究所 | Preparation method and application of carbon dot photonic crystal having opal structure or inverse opal structure |
| CN106381520A (en) * | 2016-08-29 | 2017-02-08 | 浙江理工大学 | Method for preparing photonic crystal with inverse opal structure through ultraviolet radiation |
| JP2017105667A (en) * | 2015-12-09 | 2017-06-15 | 國家中山科學研究院 | Method of preparing photonic crystal |
| WO2017142745A1 (en) * | 2016-02-17 | 2017-08-24 | The Curators Of The University Of Missouri | Fabrication of multilayer nanograting structures |
| CN107460749A (en) * | 2017-08-29 | 2017-12-12 | 大连理工大学 | A kind of method based on 1-D photon crystal schemochrome film transfer stamp |
-
2017
- 2017-12-19 CN CN201711377678.1A patent/CN108099435B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101870866A (en) * | 2010-05-19 | 2010-10-27 | 合肥学院 | Preparation method of inverse opal structure fluorescent thin film for detecting ultra-trace TNT (Trinitrotoluene) steam |
| JP2017105667A (en) * | 2015-12-09 | 2017-06-15 | 國家中山科學研究院 | Method of preparing photonic crystal |
| CN105525343A (en) * | 2015-12-18 | 2016-04-27 | 中国科学院理化技术研究所 | Preparation method and application of carbon dot photonic crystal having opal structure or inverse opal structure |
| WO2017142745A1 (en) * | 2016-02-17 | 2017-08-24 | The Curators Of The University Of Missouri | Fabrication of multilayer nanograting structures |
| CN106381520A (en) * | 2016-08-29 | 2017-02-08 | 浙江理工大学 | Method for preparing photonic crystal with inverse opal structure through ultraviolet radiation |
| CN107460749A (en) * | 2017-08-29 | 2017-12-12 | 大连理工大学 | A kind of method based on 1-D photon crystal schemochrome film transfer stamp |
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| Publication number | Publication date |
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| CN108099435A (en) | 2018-06-01 |
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