CN108091761B - Storage device based on sulfonated graphene/polypyrrole/gold nanoparticle composite material and preparation method thereof - Google Patents
Storage device based on sulfonated graphene/polypyrrole/gold nanoparticle composite material and preparation method thereof Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 239000002131 composite material Substances 0.000 title claims abstract description 82
- 229920000128 polypyrrole Polymers 0.000 title claims abstract description 79
- 238000003860 storage Methods 0.000 title claims abstract description 51
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 48
- 239000010931 gold Substances 0.000 title claims abstract description 48
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 32
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 40
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 20
- 238000004528 spin coating Methods 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- CGDDXHHVIKGCQM-UHFFFAOYSA-K gold(3+) triperchlorate Chemical compound [Au+3].[O-][Cl](=O)(=O)=O.[O-][Cl](=O)(=O)=O.[O-][Cl](=O)(=O)=O CGDDXHHVIKGCQM-UHFFFAOYSA-K 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 10
- 239000000178 monomer Substances 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 9
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 238000009210 therapy by ultrasound Methods 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 229920006267 polyester film Polymers 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 3
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 claims description 3
- 229910000360 iron(III) sulfate Inorganic materials 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 3
- XSLZWOACNCSOBR-UHFFFAOYSA-N [Au].Cl(=O)(=O)(=O)O Chemical compound [Au].Cl(=O)(=O)(=O)O XSLZWOACNCSOBR-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 34
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000004220 aggregation Methods 0.000 abstract description 4
- 230000002776 aggregation Effects 0.000 abstract description 4
- 239000002019 doping agent Substances 0.000 abstract description 3
- 238000013329 compounding Methods 0.000 abstract description 2
- 239000007864 aqueous solution Substances 0.000 description 12
- 238000005406 washing Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000007772 electrode material Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
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- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention relates to a storage device based on a sulfonated graphene/polypyrrole/gold nanoparticle composite material and a preparation method thereof. According to the invention, water-soluble sulfonated graphene is used as a doping agent to interact with polypyrrole, so that effective and uniform compounding of graphene and polypyrrole is realized, meanwhile, the polypyrrole weakens aggregation of graphene and gold nanoparticles, the graphene and gold nanoparticles improve the transmission capability of a current carrier in a composite material, and the stability and the repeatability of a memory device are ensured.
Description
Technical Field
The invention relates to the technical field of composite materials and microelectronics, in particular to a storage device based on a sulfonated graphene/polypyrrole/gold nanoparticle composite material and a preparation method thereof.
Background
In the electronic semiconductor industry, most memory devices are made of inorganic oxide semiconductor materials, however, as the preparation process of small-sized inorganic semiconductor materials is more and more complicated, the requirements of the memory devices for large storage capacity and fast storage rate are gradually not met. Organic conductive polymer materials with controllable molecular structures and easy processing have been widely used for constructing sensors, transistors, light emitting diodes and solar cells, and they are also one of the candidate materials for constructing new memory devices.
Polypyrrole, a conductive polymer material, is also used to construct memory devices. Under different external electric fields, the carrier transmission state in polypyrrole molecules can be changed, two different resistance states of high resistance and low resistance are presented, and information storage is completed. However, the transferability and stability of carriers in polypyrrole are poor, so that the storage performance and storage repeatability of the polypyrrole-based memory device need to be further improved.
The graphene and the metal nanoparticles have good electrical properties, but the graphene has poor hydrophilicity and is not beneficial to dispersion in water, and the graphene and the metal nanoparticles are easy to aggregate. The preparation of the Duyao et al (Duyao. graphene-based composite material and the application thereof in the field of photoelectric information storage [ D ]. Beijing chemical university, 2016 ]) covalently grafts the silver nanoparticles onto the graphene oxide with hydroxyl and other functional groups on the surface through crosslinking molecules, so that the performance of the graphene oxide is improved, and a storage device based on the silver nanoparticle-graphene oxide composite material is obtained, but the added crosslinking molecules are not beneficial to improving the transmission capability of current carriers.
For graphene/polypyrrole composite materials, a great deal of research work is still needed on how to realize uniform recombination of graphene and polypyrrole on a molecular level, weaken the aggregation condition of graphene, improve the transmission of current carriers in the graphene and polypyrrole composite materials, and improve the comprehensive performance of a memory device.
Disclosure of Invention
The invention aims to solve the problems of the existing graphene/polypyrrole composite material applied to a memory device, and provides a memory device based on a sulfonated graphene/polypyrrole/gold nanoparticle composite material and a preparation method thereof. The storage device comprises a conductive glass lower electrode, a sulfonated graphene/polypyrrole/gold nanoparticle composite material middle electroactive storage layer deposited on the lower electrode and an aluminum upper electrode, wherein water-soluble sulfonated graphene is used as a doping agent to interact with polypyrrole intermolecularly, so that effective and uniform compounding of graphene and polypyrrole is realized, aggregation of graphene and gold nanoparticles is weakened by polypyrrole, the transmission capability of a current carrier in the composite material is improved by the graphene and the gold nanoparticles, and the stability and repeatability of the storage device are ensured. In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a storage device based on a sulfonated graphene/polypyrrole/gold nanoparticle composite material comprises a lower electrode, an intermediate electroactive storage layer and an upper electrode, wherein the lower electrode is selected from one of ITO conductive glass, monocrystalline silicon and a flexible PET (polyethylene terephthalate) polyester film with indium oxide and tin doped on the surface, the intermediate electroactive storage layer is the sulfonated graphene/polypyrrole/gold nanoparticle composite material, and the upper electrode is made of metal aluminum.
Further, the thickness of the intermediate electroactive memory layer is 100-150nm, and the thickness of the upper electrode is 100-300 nm.
The preparation method of the memory device comprises the following steps: (a) cleaning the surface of the lower electrode for later use; (b) modifying graphite to obtain sulfonated graphene, mixing the sulfonated graphene and pyrrole monomer for reaction in the presence of an oxidant, and separating to obtain a sulfonated graphene/polypyrrole composite material; (c) dispersing the sulfonated graphene/polypyrrole composite material in water, adding perchloric acid gold, reacting and separating to obtain the sulfonated graphene/polypyrrole/gold nanoparticle composite material; (d) dispersing the sulfonated graphene/polypyrrole/gold nanoparticle composite material in a toluene solvent, spin-coating the obtained solution on a lower electrode, and drying to obtain an intermediate electroactive storage layer; (e) and evaporating a layer of aluminum on the intermediate electroactive storage layer to obtain the storage device.
According to the scheme, the lower electrode in the step (a) is ITO conductive glass or monocrystalline silicon or a flexible PET polyester film with indium oxide and tin doped on the surface by evaporation.
According to the scheme, the mass ratio of the sulfonated graphene to the pyrrole monomer to the oxidant in the step (b) is 1: 0.3-34: 0.7-200, and reacting for 12-36h at normal temperature after mixing.
According to the scheme, the oxidant is one of ferric chloride, ferric nitrate, ferric sulfate, potassium persulfate and ammonium persulfate.
According to the scheme, the mass or molar ratio of the sulfonated graphene/polypyrrole composite material to the gold perchlorate in the step (c) is 1: 0.02-0.6, dispersing the sulfonated graphene/polypyrrole composite material in water by ultrasonic treatment for 0.5-1h, adding gold perchlorate, and reacting at 0-4 ℃ for 0.5-2 h.
According to the scheme, the spin-coating speed in the step (d) is 3000-.
According to the scheme, the thickness of the middle electric activity storage layer formed by spin coating is controlled to be 100-150nm, and the thickness of the upper electrode is controlled to be 100-300 nm.
Compared with the prior art, the invention has the following beneficial effects:
(1) the sulfonated graphene ensures the electrical property of the graphene, improves the solubility of the graphene, and realizes the effective and uniform composition of the graphene and the polypyrrole on a molecular level by taking the water-soluble sulfonated graphene as a doping agent and generating intermolecular interaction with the polypyrrole;
(2) polypyrrole coated on the surface of sulfonated graphene and gold perchlorate are subjected to oxidation reduction reaction, so that generated gold nanoparticles are uniformly distributed on the surface of the graphene;
(3) the polypyrrole weakens the aggregation of the graphene and the gold nanoparticles, the graphene and the gold nanoparticles improve the transmission capability of a current carrier in the composite material, and the stability and the repeatability of the memory device are ensured.
Detailed Description
In order to make those skilled in the art fully understand the technical solutions and advantages of the present invention, the following embodiments are further described.
Example 1
1) According to a literature report (Nano Letters, 2008, 8, 1679-;
2) adding 0.01g of sulfonated graphene into an aqueous solution containing 1mmol of pyrrole monomer, adding 1.5mmol of ferric chloride, reacting at normal temperature for 24 hours, centrifuging and washing to obtain a sulfonated graphene/polypyrrole composite material;
3) dispersing 0.02g of sulfonated graphene/polypyrrole composite material in water, performing ultrasonic treatment for 0.5 hour, adding 0.3mL of 10mg/mL gold perchlorate aqueous solution, reacting at 0 ℃ for 0.5 hour, centrifuging and washing to obtain the sulfonated graphene/polypyrrole/gold nanoparticle composite material;
4) ultrasonically dispersing a sulfonated graphene/polypyrrole/gold nanoparticle composite material in toluene, spin-coating the toluene solution containing the composite material on cleaned ITO conductive glass at the rotating speed of 5000 revolutions per minute for 30 seconds, and finally drying the ITO conductive glass with the surface coated with the composite material at 100 ℃ for 10 minutes to obtain an intermediate electroactive storage layer with the thickness of 100 nm;
5) and evaporating and plating a layer of metal aluminum with the thickness of 180nm on the middle electroactive storage layer which is subjected to spin coating to be used as an upper electrode material, so as to obtain the storage device based on the sulfonated graphene/polypyrrole/gold nanoparticle composite material.
Under the room temperature environment, the semiconductor parameter analysis detecting instrument tests the current-voltage curve of the device, the turn-on voltage of the device is measured to be about 2.2V, and the on-off current ratio is measured to be about 4.3 multiplied by 104. The result shows that the device has better storage effect.
Example 2
1) According to a literature report (Nano Letters, 2008, 8, 1679-;
2) adding 0.02g of sulfonated graphene into an aqueous solution containing 2mmol of pyrrole monomer, adding 2mmol of ammonium persulfate, reacting at normal temperature for 30 hours, centrifuging and washing to obtain a sulfonated graphene/polypyrrole composite material;
3) dispersing 0.02g of sulfonated graphene/polypyrrole composite material in water, performing ultrasonic treatment for 0.5 hour, adding 0.4mL of 10mg/mL gold perchlorate aqueous solution, reacting at 0 ℃ for 1 hour, centrifuging and washing to obtain the sulfonated graphene/polypyrrole/gold nanoparticle composite material;
4) ultrasonically dispersing a sulfonated graphene/polypyrrole/gold nanoparticle composite material in toluene, spin-coating the toluene solution containing the composite material on cleaned ITO conductive glass at the rotating speed of 4000 revolutions per minute for 50 seconds, and finally drying the ITO conductive glass with the surface coated with the composite material at 100 ℃ for 20 minutes to obtain an intermediate electroactive storage layer with the thickness of 120 nm;
5) and evaporating and plating a layer of metal aluminum with the thickness of 200nm on the middle electroactive storage layer which is subjected to spin coating to be used as an upper electrode material, so as to obtain the storage device based on the sulfonated graphene/polypyrrole/gold nanoparticle composite material.
Under the room temperature environment, the semiconductor parameter analysis detecting instrument tests the current-voltage curve of the device, the turn-on voltage of the device is measured to be about 2.1V, and the on-off current ratio is measured to be about 3.6 multiplied by 104. The result shows that the device has better storage effect.
Example 3
1) According to a literature report (Nano Letters, 2008, 8, 1679-;
2) adding 0.05g of sulfonated graphene into an aqueous solution containing 4mmol of pyrrole monomer, adding 4mmol of ferric nitrate, reacting at normal temperature for 18 hours, centrifuging and washing to obtain a sulfonated graphene/polypyrrole composite material;
3) dispersing 0.01g of sulfonated graphene/polypyrrole composite material in water, performing ultrasonic treatment for 0.5 hour, adding 0.2mL of 10mg/mL gold perchlorate aqueous solution, reacting at 4 ℃ for 1 hour, centrifuging and washing to obtain the sulfonated graphene/polypyrrole/gold nanoparticle composite material;
4) ultrasonically dispersing a sulfonated graphene/polypyrrole/gold nanoparticle composite material in toluene, spin-coating the toluene solution containing the composite material on cleaned monocrystalline silicon at the rotating speed of 3500 revolutions per minute for 60 seconds, and finally drying the monocrystalline silicon with the composite material spin-coated on the surface at 100 ℃ for 10 minutes to obtain an intermediate electroactive storage layer with the thickness of 150 nm;
5) and evaporating and plating a layer of metal aluminum with the thickness of 200nm on the middle electroactive storage layer which is subjected to spin coating to be used as an upper electrode material, so as to obtain the storage device based on the sulfonated graphene/polypyrrole/gold nanoparticle composite material.
Under the room temperature environment, the device is tested by a detecting instrument, and the device has a better storage effect.
Example 4
1) According to a literature report (Nano Letters, 2008, 8, 1679-;
2) adding 0.1g of sulfonated graphene into an aqueous solution containing 5mmol of pyrrole monomer, adding 5mmol of ferric sulfate, reacting at normal temperature for 24 hours, centrifuging and washing to obtain a sulfonated graphene/polypyrrole composite material;
3) dispersing 0.1g of sulfonated graphene/polypyrrole composite material in water, performing ultrasonic treatment for 1 hour, adding 0.6mL of 10mg/mL gold perchlorate aqueous solution, reacting at 4 ℃ for 0.5 hour, centrifuging and washing to obtain the sulfonated graphene/polypyrrole/gold nanoparticle composite material;
4) ultrasonically dispersing a sulfonated graphene/polypyrrole/gold nanoparticle composite material in toluene, spin-coating the toluene solution containing the composite material on cleaned monocrystalline silicon at the rotating speed of 4500 rpm for 40 seconds, and finally drying the monocrystalline silicon with the composite material spin-coated on the surface at 100 ℃ for 15 minutes to obtain an intermediate electroactive storage layer with the thickness of 140 nm;
5) and evaporating and plating a layer of 230 nm-thick metal aluminum on the middle electroactive storage layer which is subjected to spin coating to be used as an upper electrode material, so as to obtain the storage device based on the sulfonated graphene/polypyrrole/gold nanoparticle composite material.
Under the room temperature environment, the device is tested by a detecting instrument, and the device has a better storage effect.
Example 5
1) According to a literature report (Nano Letters, 2008, 8, 1679-;
2) adding 0.06g of sulfonated graphene into an aqueous solution containing 3mmol of pyrrole monomer, adding 3mmol of potassium persulfate, reacting at normal temperature for 24 hours, centrifuging and washing to obtain a sulfonated graphene/polypyrrole composite material;
3) dispersing 0.03g of sulfonated graphene/polypyrrole composite material in water, performing ultrasonic treatment for 0.5 hour, adding 0.4mL of 10mg/mL gold perchlorate aqueous solution, reacting at 0 ℃ for 1 hour, centrifuging and washing to obtain the sulfonated graphene/polypyrrole/gold nanoparticle composite material;
4) ultrasonically dispersing a sulfonated graphene/polypyrrole/gold nanoparticle composite material in toluene, spin-coating the toluene solution containing the composite material on a clean flexible PET (polyethylene terephthalate) polyester film with indium oxide and tin doped on the surface at the rotating speed of 5000 rpm for 45 seconds, and finally drying the flexible PET polyester film with the composite material spin-coated on the surface at 100 ℃ for 20 minutes to obtain an intermediate electroactive storage layer with the thickness of 130 nm;
5) and evaporating and plating a layer of metal aluminum with the thickness of 180nm on the middle electroactive storage layer which is subjected to spin coating to be used as an upper electrode material, so as to obtain the storage device based on the sulfonated graphene/polypyrrole/gold nanoparticle composite material.
Under the room temperature environment, the device is tested by a detecting instrument, and the device has a better storage effect.
Example 6
1) According to a literature report (Nano Letters, 2008, 8, 1679-;
2) adding 0.15g of sulfonated graphene into an aqueous solution containing 3mmol of pyrrole monomer, adding 3mmol of ammonium persulfate, reacting at normal temperature for 24 hours, centrifuging and washing to obtain a sulfonated graphene/polypyrrole composite material;
3) dispersing 0.06g of sulfonated graphene/polypyrrole composite material in water, performing ultrasonic treatment for 1 hour, adding 0.3mL of 10mg/mL gold perchlorate aqueous solution, reacting at 4 ℃ for 0.5 hour, centrifuging and washing to obtain the sulfonated graphene/polypyrrole/gold nanoparticle composite material;
4) ultrasonically dispersing a sulfonated graphene/polypyrrole/gold nanoparticle composite material in toluene, spin-coating the toluene solution containing the composite material on cleaned ITO conductive glass at the rotating speed of 5000 revolutions per minute for 30 seconds, and finally drying the ITO conductive glass with the surface coated with the composite material at 100 ℃ for 10 minutes to obtain an intermediate electroactive storage layer with the thickness of 100 nm;
5) and evaporating and plating a 2600nm layer of metal aluminum on the middle electrical activity storage layer which is subjected to spin coating to be used as an upper electrode material, so as to obtain the storage device based on the sulfonated graphene/polypyrrole/gold nanoparticle composite material.
Under the room temperature environment, the device is tested by a detecting instrument, and the device has a better storage effect.
Claims (6)
1. A memory device based on a sulfonated graphene/polypyrrole/gold nanoparticle composite material is characterized in that: the memory device consists of a lower electrode, an intermediate electroactive storage layer and an upper electrode, wherein the lower electrode is selected from one of ITO conductive glass, monocrystalline silicon and a flexible PET (polyethylene terephthalate) polyester film with indium oxide and tin doped on the surface, the intermediate electroactive storage layer is a sulfonated graphene/polypyrrole/gold nanoparticle composite material, and the upper electrode is metal aluminum; the preparation method of the memory device comprises the following steps:
(a) cleaning the surface of the lower electrode for later use;
(b) modifying graphite to obtain sulfonated graphene, mixing the sulfonated graphene and pyrrole monomer for reaction in the presence of an oxidant, and separating to obtain a sulfonated graphene/polypyrrole composite material;
(c) dispersing the sulfonated graphene/polypyrrole composite material in water, adding perchloric acid gold, reacting and separating to obtain the sulfonated graphene/polypyrrole/gold nanoparticle composite material;
(d) dispersing the sulfonated graphene/polypyrrole/gold nanoparticle composite material in toluene, spin-coating the obtained solution on a lower electrode, and drying to obtain an intermediate electroactive storage layer;
(e) and evaporating a layer of aluminum on the intermediate electroactive storage layer to obtain the storage device.
2. The memory device of claim 1, wherein the memory device comprises a graphene/polypyrrole/gold nanoparticle composite material, and the graphene/polypyrrole/gold nanoparticle composite material comprises: the thickness of the middle electroactive storage layer is 100-150nm, and the thickness of the upper electrode is 100-300 nm.
3. The memory device of claim 1, wherein the memory device comprises a graphene/polypyrrole/gold nanoparticle composite material, and the graphene/polypyrrole/gold nanoparticle composite material comprises: in the step (b), the mass ratio of the sulfonated graphene to the pyrrole monomer to the oxidant is 1: 0.3-34: 0.7-200, and reacting for 12-36h at normal temperature after mixing.
4. A memory device based on sulfonated graphene/polypyrrole/gold nanoparticle composite material according to claim 1 or 3, wherein: the oxidant is one of ferric chloride, ferric nitrate, ferric sulfate, potassium persulfate and ammonium persulfate.
5. The memory device of claim 1, wherein the memory device comprises a graphene/polypyrrole/gold nanoparticle composite material, and the graphene/polypyrrole/gold nanoparticle composite material comprises: in the step (c), the mass ratio of the sulfonated graphene/polypyrrole composite material to the gold perchlorate is 1: 0.02-0.6, dispersing the sulfonated graphene/polypyrrole composite material in water by ultrasonic treatment for 0.5-1h, adding gold perchlorate, and reacting at 0-4 ℃ for 0.5-2 h.
6. The memory device of claim 1, wherein the memory device comprises a graphene/polypyrrole/gold nanoparticle composite material, and the graphene/polypyrrole/gold nanoparticle composite material comprises: in the step (d), the spin coating speed is 3000-.
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| CN110148670A (en) * | 2019-05-14 | 2019-08-20 | 武汉工程大学 | A kind of graphene quantum dot with storage effect/polypyrrole/gold nano particle/polyvinyl alcohol composite nano film |
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