CN108084221A - Sila condensed ring analog derivative, its application and electroluminescent device - Google Patents

Sila condensed ring analog derivative, its application and electroluminescent device Download PDF

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CN108084221A
CN108084221A CN201611040892.3A CN201611040892A CN108084221A CN 108084221 A CN108084221 A CN 108084221A CN 201611040892 A CN201611040892 A CN 201611040892A CN 108084221 A CN108084221 A CN 108084221A
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silicon substrate
sila
condensed ring
substitution
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CN108084221B (en
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穆广园
庄少卿
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Hubei Sunshine Optoelectronics Material Co ltd
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WUHAN SHANGSAI PHOTOELECTRIC TECHNOLOGY Co Ltd
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    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract

The invention belongs to photoelectric material applied technical fields, and in particular to sila condensed ring analog derivative, its application and electroluminescent device.The sila condensed ring analog derivative by the bonded different aromatic group of different loci in sila condensed ring class or changes bridge crosslinking structure, forms the electron transport material with high electron mobility characteristic using sila condensed ring class as core.The derivative of sila condensed ring class provided by the present invention is as electron transfer layer, silicon forms stronger covalent bond with halogen, with stronger drawing electronic action, sila heptatomic ring can retain fragrant ring property, the nonplanar structure that the sp3 hydridization of silicon is formed simultaneously can effectively reduce entire planes of molecules accumulation, and with high triplet, triplet exciton is avoided to return, suitable for fluorescence radiation and phosphorescent emitter system.

Description

Sila condensed ring analog derivative, its application and electroluminescent device
Technical field
The invention belongs to photoelectric material applied technical fields, and in particular to sila condensed ring analog derivative, its application and it is electroluminescent Luminescent device.
Background technology
Nineteen ninety, univ cambridge uk report utilize styrene conjugated polymer PPV [poly for the first time (phenylenevinylene)] made by organic polymer light emitting diode (PLED) device (Burroughes J.H., Bradley D.D.C.,Brown A.R.,et al,Light-Emitting Diodes Based on Conjugated Polymers.Nature 1990,347,539-541.), Organic Light Emitting Diode Materials direction has been widened again.1998 Year, Forrest et al. obtains phosphorescence triplet under room temperature by means of heavy metal atom effect for the first time and shines (Baldo M.A., O' Brien D.F.,You Y.,et al,Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices.Nature 1998,395(6698):151-154.).2011, Helander etc. People uses lenticule technique for outing light so that green light power efficiency improves 2.3 times, while also reported that up to 290lm/W's is green Optical device (Helander M.G., Wang Z.B., Qiu J., et al, Chlorinated Indium Tin Oxide Electrodes with High Work Function for Organic Device Compatibility.Science 2011,332(6032):944-947.).Adachi reports the delayed fluorescence phenomenon (Lee that external quantum efficiency breaks through 5% S.Y.,Yasuda T.,Nomura H.,et al,High-Efficiency Organic Light-Emitting Diodes Utilizing Thermally Activated Delayed Fluorescence from Triazine-Based Donor– Acceptor Hybrid Molecules.Applied Physics Letters 2012,101(9):093306 1-4.), profit Singlet state is formed with triplet reversion transition under room temperature, fluorescent blue light efficiency is greatly improved, from this Organic Light Emitting Diode The period booming into one.
The quality of electron transport material performance has OLED device critically important influence, an efficient electron transport material Should possess suitable molecule L UMO and HOMO energy levels, higher electron mobility, good macroscopic property (including thermal decomposition Temperature and glass transition temperature), characteristics, the electron transport material that we often use such as higher triplet energy level have pyridine derived Object, oxazole derivatives, metallo-chelate, quinoline, quinoline derivant, phenazine/phenanthrene derivative etc..
Chinese patent 201110182996.9 discloses a kind of sila cyclopentene class compound and its preparation method and application, And such substance is mainly as synthetic intermediate.
The content of the invention
To solve the deficiencies in the prior art, the present invention provides sila condensed ring analog derivative, its application and electroluminescent cells Part.Such substance using sila condensed ring class as core, by the bonded different aromatic group of different loci in sila condensed ring class or Change bridge crosslinking structure, form the electron transport material with high electron mobility characteristic.
Technical solution provided by the present invention is as follows:
Sila condensed ring analog derivative, with the general structure shown in formula (Ia) or formula (Ib):
Wherein:
Ar1-Ar4Phenyl or naphthyl is independently selected from, also, at least one is naphthalene;
R1-R4It is independently selected from substituted or unsubstituted C1-C20Alkane group, substitution or it is unsubstituted C1-C20Silane hydrocarbyl group, substitution or unsubstituted C6-C65Aromatic group, substitution or unsubstituted C6-C65 Fragrant silane group, substitution or unsubstituted C5-C65Heterocyclic group, substitution or unsubstituted C6-C65It is more Cyclic group, substitution or unsubstituted C6-C65Arylene group or substitution or unsubstituted C6-C65Asia fragrance Heterocyclic group, R1-R4Identical or different, X is halogen F, Cl, Br or I.
Specifically, with the general structure shown in formula (Ib), wherein:
C1-C20Alkane group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C1-C20Silane hydrocarbyl group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl Base;
C6-C65Aromatic group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C6-C65Fragrant silane group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl Base;
C5-C65Heterocyclic group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C6-C65Polycyclic moiety substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C6-C65Arylene group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl Base;
C6-C65Sub- aromatic heterocycle group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl Acyl group;
R1-R4It is identical or different;
X is halogen F, Cl, Br or I.
Preferably, C5-C65Heterocyclic group be C5-C65Heteroaromatic group;C6-C65Polycyclic moiety be C6-C65Contracting Close polycyclic aromatic group.
It is furthermore preferred that the structure of sila condensed ring analog derivative is as follows:
Specifically, R1-R4It is independently selected from the structure shown in general formula 2a-2o:
R1-R4It is identical or different;
Y、R21、R22And R23It is independently substituted or non-substituted C1-C20Alkane group, substitution or non-take The C in generation1-C20Silane hydrocarbyl group, substitution or non-substituted C6-C65Aromatic group, substitution or non-substituted C6-C65's Fragrant silane group, substituted or non-substituted C6-C65Heteroaromatic group or substituted or non-substituted C6-C65Condensing polyaromatic hydrocarbon Group, * represent the position of substitution, and p represents substitution number, and scope is integer 1-7.
Specifically, Y, R21、R22Or R23In:
C1-C20Alkane group be methyl, ethyl, propyl, isopropyl, butyl, isobutyl group or tertiary butyl;
C1-C20Silane hydrocarbyl group be first silicon substrate, second silicon substrate, the third silicon substrate, isopropyl silicon substrate, fourth silicon substrate, isobutyl silicon substrate or uncle Fourth silicon substrate;
C6-C65Aromatic group include at least an aromatic rings, condense or be connected by singly-bound between aromatic rings, such as benzene Base, 1- naphthalenes, 2- naphthalenes, 3,5- diphenyl phenyl etc.;
C6-C65Miscellaneous aromatic rings include at least a five-ring heterocycles or hexa-member heterocycle, five-ring heterocycles or hexa-member heterocycle point At least do not condense or be connected by singly-bound between heterocycle, such as thienyl group, benzene containing any one in nitrogen, oxygen, phosphorus or sulphur Bithiophene group, pyridine groups, pyrrole group, oxazole group, thiazolyl group, thiadiazoles group, triazine group, diphenyl phosphorus oxygen Group, imidazole group, to phenyl benzimidazole groups group, phenyl benzimidazole groups group, carbazole group, indolyl radical, quinolyl Group, isoquinolin group.
Further:
C1-C20Alkane group substituent group be deuterium, halogen, hydroxyl, nitro, cyano, amido, amidino groups or carbonyl acyl group;
C1-C20Silane hydrocarbyl group substituent group be deuterium, halogen, hydroxyl, nitro, cyano, amido, amidino groups or carbonyl acyl group;
Substituted C6-C65Aromatic group include at least one by methyl, ethyl, propyl, isopropyl, butyl, isobutyl group, Tertiary butyl, first silicon substrate, second silicon substrate, the third silicon substrate, isopropyl silicon substrate, fourth silicon substrate, isobutyl silicon substrate or the aromatic rings of tertiary fourth silicon substrate substitution, such as C1-C10 alkyl substituent groups (toluene, ethylo benzene, o-, m-, p- cumenyl, methyl naphthalene), halides (o-, m-, p- fluorine Benzene is fluorinated naphthalene, trifluoromethylbenzene), cyano object (cyano benzene, cyano naphthalene, cyanobiphenyl), C1-C10 alkyl-substituted biphenyls groups, C1-C10 alkoxy substituted biphenyl groups, C1-C10 alkyl-substituted naphthaline groups, C1-C10 alkoxy substituted naphthyls group;
Non-substituted C6-C65Miscellaneous aromatic group include at least one by methyl, ethyl, propyl, isopropyl, butyl, different Butyl, tertiary butyl, first silicon substrate, second silicon substrate, the third silicon substrate, isopropyl silicon substrate, fourth silicon substrate, isobutyl silicon substrate or the heteroaryl of tertiary fourth silicon substrate substitution Fragrant ring.
Sila condensed ring analog derivative provided by the present invention includes but not limited to following preferred compound:
The present invention also provides a kind of electroluminescent device, including organic light emission a pair of electrodes and setting between the electrodes Medium, the organic light emitting medium at least contain a kind of sila condensed ring analog derivative provided by the present invention.
The present invention also provides the application of above-mentioned sila condensed ring analog derivative, as the electricity in organic electroluminescence device Sub- transmission material and/or light emitting host material.
The derivative of sila condensed ring class provided by the present invention forms stronger covalent as electron transfer layer, silicon with halogen Key has stronger drawing electronic action, and sila heptatomic ring can retain fragrant ring property, while the sp3 hydridization formation of silicon is non-flat Face structure can effectively reduce entire planes of molecules accumulation, and with high triplet, triplet exciton be avoided to return, suitable for glimmering Light shines and phosphorescent emitter system.This quasi-molecule has high electron mobility, can be effectively matched the material of high hole mobility, Equilbrium carrier can be widely applied in organic light emitting diode, and obtain good effect, be that one kind has very big business The new material of value.
Description of the drawings
Fig. 1 is the structure diagram of device in embodiment.
Fig. 2 is the electron mobility of compound 1,10,12,14,22.
Fig. 3 is the luminescent spectrum figure of device 1,2,12.
Fig. 4 is current efficiency-current density characteristics graph of device 1,2,12.
Specific embodiment
The principles and features of the present invention are described below, and illustrated embodiment is served only for explaining the present invention, is not intended to Limit the scope of the present invention.
Embodiment 1:The synthesis of compound 1
Addition 50ml tetrahydrofurans in 100ml flasks, (2- bromophenyls) quadrosilan 1.5g, silver fluoride 0.5g, at room temperature Stir 3 it is small when, after filtering, rotate solvent, n-hexane is recrystallized to give intermediate 1a1.6g.
Under nitrogen protection by 1a (1.6g), 2 hydroxy naphthalene boric acid (0.8g), tetra-triphenylphosphine palladium (0.1g), toluene (50ml), ethyl alcohol (20ml) and wet chemical (20ml, 2M) are put into 200ml three neck round bottom flask and are stirred, mixture Stream of nitrogen gas protection under be heated to 90 DEG C reaction 12 it is small when.Room temperature is naturally cooled to after completion of the reaction, is extracted with dichloromethane Reaction solution, washing, drying, rotates solvent, and column chromatography obtains product 1b 1.5g.
50ml dichloromethane is added in 100ml flasks, 0.1ml trifluoro second is slowly added dropwise under ice bath in intermediate 1b 1.5g Acid, when stirring 3 is small at room temperature, thin-layer chromatography monitoring reaction process after reactant disappears, adds in aqueous sodium carbonate, uses dichloro Methane extracts reaction solution, and washing, drying rotate solvent, and column chromatography obtains 1 1.0g. of product1H-NMR:(DMSO-d6, 400MHz):δ (ppm) 8.55 (1H), 8.10 (1H), 8.08 (1H), 8.01 (1H), 7.89 (2H), 7.61 (2H), 7.55 (3H), 7.52(2H),7.46(2H),7.37(2H),7.33(2H),7.11(2H),MS(APCI)(m/z):[M+H+]calcd, 403.53;found,403.53.
Embodiment 2:The synthesis of compound 10
Add in 30ml anhydrous tetrahydro furans in 100ml flasks, diphenyl chlorosilane 3.5g adds in the positive fourths of 2.5M at -110 DEG C Base lithium 6.5ml, reaction after ten minutes, are added dropwise the tetrahydrofuran solution 20ml of the bromo- 2- iodine naphthalenes (5.35g) of 1-, react 30 points Zhong Hou, when stirring 3 is small at room temperature, vacuum distillation obtains intermediate 10a 2.6g.
50ml tetrahydrofurans are added in 100ml flasks, it is small to stir 3 at room temperature by intermediate 10a 1.5g, silver fluoride 0.5g When, after filtering, solvent is rotated, n-hexane is recrystallized to give intermediate 10b 1.4g.
Under nitrogen protection by 10b (1.4g), 2 hydroxy naphthalene boric acid (0.88g), tetra-triphenylphosphine palladium (0.1g), toluene (40ml), ethyl alcohol (20ml) and wet chemical (40ml, 2M) are put into 200ml three neck round bottom flask and are stirred, mixture Stream of nitrogen gas protection under be heated to 95 DEG C reaction 12 it is small when.Room temperature is naturally cooled to after completion of the reaction, is extracted with dichloromethane Reaction solution, washing, anhydrous sodium sulfate drying, rotates solvent, column chromatography obtains product 10c 1.1g.
50ml dichloromethane is added in 100ml flasks, 0.1ml trifluoro second is slowly added dropwise under ice bath in intermediate 10c 1.1g Acid, when stirring 3 is small at room temperature, thin-layer chromatography monitoring reaction process after reactant disappears, adds in aqueous sodium carbonate, uses dichloro Methane extracts reaction solution, and washing, drying rotate solvent, and column chromatography obtains 10 0.5g of product,1H-NMR:(DMSO-d6, 400MHz):δ(ppm)8.55(2H),8.14(1H),8.10(1H),8.08(2H),8.01(2H),7.89(1H),7.66(1H), 7.61(1H),7.55(5H),7.52(1H),7.46(2H),7.37(2H),7.33(1H).MS(APCI)(m/z):[M+H+] calcd,453.59;found,453.49.
Embodiment 3:The synthesis of compound 12
Under nitrogen protection by 10b (1.4g), 2 hydroxy naphthalene boric acid (0.88g), tetra-triphenylphosphine palladium (0.1g), toluene (40ml), ethyl alcohol (20ml) and wet chemical (40ml, 2M) are put into 200ml three neck round bottom flask and are stirred, mixture Stream of nitrogen gas protection under be heated to 95 DEG C reaction 12 it is small when.Room temperature is naturally cooled to after completion of the reaction, is extracted with dichloromethane Reaction solution, washing, anhydrous sodium sulfate drying, rotates solvent, column chromatography obtains product 12c 1.0g.
50ml dichloromethane is added in 100ml flasks, 0.1ml trifluoro second is slowly added dropwise under ice bath in intermediate 10c 1.0g Acid, when stirring 3 is small at room temperature, thin-layer chromatography monitoring reaction process after reactant disappears, adds in aqueous sodium carbonate, uses dichloro Methane extracts reaction solution, and washing, drying rotate solvent, and column chromatography obtains 10 0.4g of product, chemical combination is synthesized by suzuki reaction Object 12,1H-NMR:(DMSO-d6,400MHz):δ(ppm)8.55(1H),8.40(2H),8.14(1H),8.100(1H),8.00 (2H),7.89(1H),7.66(1H),7.61(1H),7.59(2H),7.55(3H),7.52(1H),7.46(2H),7.37(2H), 7.33(1H).MS(APCI)(m/z):[M+H+]calcd,453.59;found,453.51.
Embodiment 4:The synthesis of compound 14
Add in 30ml anhydrous tetrahydro furans in 100ml flasks, diphenyl chlorosilane 3.5g adds in the positive fourths of 2.5M at -110 DEG C Base lithium 6.5ml, reaction after ten minutes, are added dropwise the tetrahydrofuran solution 20ml of the bromo- 3- iodine naphthalenes (5.35g) of 2-, react 30 points Zhong Hou, when stirring 3 is small at room temperature, vacuum distillation obtains intermediate 14a 3.0g.
50ml tetrahydrofurans are added in 100ml flasks, it is small to stir 3 at room temperature by intermediate 14a 3.0g, silver fluoride 1.0g When, after filtering, solvent is rotated, n-hexane is recrystallized to give intermediate 14b 2.8g.
Under nitrogen protection by 14b (2.8g), 2 hydroxy naphthalene boric acid (1.8g), tetra-triphenylphosphine palladium (0.1g), toluene (50ml), ethyl alcohol (25ml) and wet chemical (50ml, 2M) are put into 200ml three neck round bottom flask and are stirred, mixture Stream of nitrogen gas protection under be heated to 95 DEG C reaction 12 it is small when.Room temperature is naturally cooled to after completion of the reaction, is extracted with dichloromethane Reaction solution, washing, anhydrous sodium sulfate drying, rotates solvent, column chromatography obtains product 14c 2.1g.
50ml dichloromethane is added in 100ml flasks, 0.2ml trifluoro second is slowly added dropwise under ice bath in intermediate 14c 2.1g Acid, when stirring 3 is small at room temperature, thin-layer chromatography monitoring reaction process after reactant disappears, adds in aqueous sodium carbonate, uses dichloro Methane extracts reaction solution, and washing, drying rotate solvent, and column chromatography obtains 14 0.6g of product,1H-NMR:(DMSO-d6, 400MHz):δ(ppm)8.55(1H),8.44(1H),8.10(1H),8.08(1H),8.01(2H),8.00(2H),7.89(1H), 7.61(1H),7.59(2H),7.55(3H),7.52(1H),7.46(2H),7.37(2H),7.33(1H).MS(APCI)(m/z): [M+H+]calcd,453.59;found,453.52.
Embodiment 5:The synthesis of compound 17
The anhydrous second diether of 30ml is added in 100ml flasks, diphenyl dichlorosilane 3.5g adds in the examination of 2- naphthalenes form under ice bath Agent 4.8g, after reacting 30 minutes, when room temperature reaction 3 is small, distillation obtains 17a.
Add in 30ml anhydrous tetrahydro furans in 100ml flasks, intermediate 17a 2.7g add in 2.5M normal-butyls at -110 DEG C Lithium 4.5ml, reaction after ten minutes, are added dropwise the tetrahydrofuran solution 20ml of the bromo- 3- iodine naphthalenes (3.7g) of 2-, react 30 minutes Afterwards, when stirring 3 is small at room temperature, vacuum distillation obtains 17b1.0g.
50ml tetrahydrofurans are added in 100ml flasks, it is small to stir 3 at room temperature by intermediate 17b 1.0g, silver fluoride 0.5g When, after filtering, solvent is rotated, n-hexane is recrystallized to give intermediate 17c 0.8g.
Under nitrogen protection by 17c (0.8g), 2- hydroxyls phenyl boric acid (0.5g), tetra-triphenylphosphine palladium (0.1g), toluene (25ml), ethyl alcohol (12ml) and wet chemical (25ml, 2M) are put into 100ml three neck round bottom flask and are stirred, mixture Stream of nitrogen gas protection under be heated to 95 DEG C reaction 12 it is small when.Room temperature is naturally cooled to after completion of the reaction, is extracted with dichloromethane Reaction solution, washing, anhydrous sodium sulfate drying, rotates solvent, column chromatography obtains product 17d 0.5g.
50ml dichloromethane is added in 100ml flasks, 0.1ml trifluoro second is slowly added dropwise under ice bath in intermediate 17d 0.5g Acid, when stirring 3 is small at room temperature, thin-layer chromatography monitoring reaction process after reactant disappears, adds in aqueous sodium carbonate, uses dichloro Methane extracts reaction solution, and washing, drying rotate solvent, and column chromatography obtains 17 0.2g of product,1H-NMR:(DMSO-d6, 400MHz):δ(ppm)8.44(2H),8.01(2H),8.00(4H),7.85(2H),7.59(4H),7.55(1H),7.47(2H), 7.46(2H),7.37(2H).MS(APCI)(m/z):[M+H+]calcd,453.59;found,453.54.
Embodiment 6:The synthesis of compound 22
The anhydrous second diether of 30ml is added in 100ml flasks, diphenyl dichlorosilane 3.5g adds in the examination of 1- naphthalenes form under ice bath Agent 4.8g, after reacting 30 minutes, when room temperature reaction 3 is small, distillation obtains 22a.
Add in 30ml anhydrous tetrahydro furans in 100ml flasks, intermediate 22a 2.7g add in 2.5M normal-butyls at -110 DEG C Lithium 4.5ml, after ten minutes, the tetrahydrofuran solution 20ml of 1 iodo- 2- bromonaphthalenes (3.7g) is added dropwise in reaction, after reacting 30 minutes, When stirring 3 is small at room temperature, vacuum distillation obtains 22b1.5g.
50ml tetrahydrofurans are added in 100ml flasks, it is small to stir 3 at room temperature by intermediate 22b 1.5g, silver fluoride 0.75g When, after filtering, solvent is rotated, n-hexane is recrystallized to give intermediate 22c 0.6g.
Under nitrogen protection by 12c (0.6g), 2- hydroxyls phenyl boric acid (0.3g), tetra-triphenylphosphine palladium (0.05g), toluene (25ml), ethyl alcohol (12ml) and wet chemical (25ml, 2M) are put into 100ml three neck round bottom flask and are stirred, mixture Stream of nitrogen gas protection under be heated to 95 DEG C reaction 12 it is small when.Room temperature is naturally cooled to after completion of the reaction, is extracted with dichloromethane Reaction solution, washing, anhydrous sodium sulfate drying, rotates solvent, column chromatography obtains product 22d 0.4g.
50ml dichloromethane is added in 100ml flasks, 0.1ml trifluoro second is slowly added dropwise under ice bath in intermediate 22d 0.4g Acid, when stirring 3 is small at room temperature, thin-layer chromatography monitoring reaction process after reactant disappears, adds in aqueous sodium carbonate, uses dichloro Methane extracts reaction solution, and washing, drying rotate solvent, and column chromatography obtains 22 0.2g of product,1H-NMR:(DMSO-d6, 400MHz):δ(ppm)8.55(1H),8.18(1H),8.14(1H),7.89(1H),7.87(3H),7.85(2H),7.66(1H), 7.65(1H),7.61(1H),7.60(1H),7.55(4H),7.52(1H),7.47(2H),7.33(1H).MS(APCI)(m/z): [M+H+]calcd,453.59;found,453.54.
Embodiment 7:The preparation of device 1
This example illustrates the performance verification for the electroluminescent device that compound 1 is prepared as electron transport material. ITO (tin indium oxide) glass is in succession with ultrasonic cleaning 30 minutes in cleaning agent and deionized water.Then when vacuum drying 2 is small (105 DEG C), then ITO (tin indium oxide) glass is put into the oxygen plasma treatment carried out in plasma reactor 5 minutes, it is transmitted to Organic film and metal electrode are prepared in vacuum chamber, the hole-injecting material of one layer of 10nm is then prepared by the method for vacuum evaporation The hole-injecting material of 80nm thickness is then deposited in molybdenum trioxide:4,4'- cyclohexyl two [N, N- bis- (4- aminomethyl phenyls) aniline] (TAPC), the material 1 of vacuum evaporation last layer 12nm, 3- bis- (9- carbazoles) benzene are then continued through on this hole transmission layer (mcp):Three (2- phenylpyridines) close iridium (Ir (ppy) 3), are finally deposited the compound 1 of one layer of 20nm again, the LiF of 10nm thickness with The Al of 100nm.
The anode of direct current is added on ITO (tin indium oxide) layer, cathode is added on metal layer by cathode of the aluminium as device, The i.e. available bright uniform green light sent from ITO (tin indium oxide) layer, maximum current efficiency are 125.9cd/A.This experiment Device architecture is:ITO (tin indium oxide)/TAPC (60nm)/mcp:3 6%1 (12nm)/1 (20nm) of Ir (ppy)/LiF (1nm)/ Al(100nm)。
Embodiment 8:The preparation of device 2
This example illustrates the performance verification for the electroluminescent device that compound 10 is prepared as electron transport material. ITO (tin indium oxide) glass is in succession with ultrasonic cleaning 30 minutes in cleaning agent and deionized water.Then when vacuum drying 2 is small (105 DEG C), then ITO (tin indium oxide) glass is put into the oxygen plasma treatment carried out in plasma reactor 5 minutes, it is transmitted to Organic film and metal electrode are prepared in vacuum chamber, the hole-injecting material of one layer of 10nm is then prepared by the method for vacuum evaporation The hole-injecting material of 80nm thickness is then deposited in molybdenum trioxide:4,4'- cyclohexyl two [N, N- bis- (4- aminomethyl phenyls) aniline] (TAPC), the material 1 of vacuum evaporation last layer 12nm, 3- bis- (9- carbazoles) benzene are then continued through on this hole transmission layer (mcp):Three (2- phenylpyridines) close iridium (Ir (ppy) 3), are finally deposited the compound 10 of one layer of 20nm again, the LiF of 10nm thickness with The Al of 100nm.
The anode of direct current is added on ITO (tin indium oxide) layer, cathode is added on metal layer by cathode of the aluminium as device, The i.e. available bright uniform green light sent from ITO (tin indium oxide) layer, maximum current efficiency are 132.2cd/A.This experiment Device architecture is:ITO (tin indium oxide)/TAPC (60nm)/mcp:3 6% (12nm)/10 (20nm) of Ir (ppy)/LiF (1nm)/ Al(100nm)。
Embodiment 9:The preparation of device 12
This example illustrates the performance verification for the electroluminescent device that compound 12 is prepared as electron transport material. ITO (tin indium oxide) glass is in succession with ultrasonic cleaning 30 minutes in cleaning agent and deionized water.Then when vacuum drying 2 is small (105 DEG C), then ITO (tin indium oxide) glass is put into the oxygen plasma treatment carried out in plasma reactor 5 minutes, it is transmitted to Organic film and metal electrode are prepared in vacuum chamber, the hole-injecting material of one layer of 10nm is then prepared by the method for vacuum evaporation The hole-injecting material of 80nm thickness is then deposited in molybdenum trioxide:4,4'- cyclohexyl two [N, N- bis- (4- aminomethyl phenyls) aniline] (TAPC), the material 1 of vacuum evaporation last layer 12nm, 3- bis- (9- carbazoles) benzene are then continued through on this hole transmission layer (mcp):Three (2- phenylpyridines) close iridium (Ir (ppy) 3), are finally deposited the compound 12 of one layer of 20nm again, the LiF of 10nm thickness with The Al of 100nm.
The anode of direct current is added on ITO (tin indium oxide) layer, cathode is added on metal layer by cathode of the aluminium as device, The i.e. available bright uniform green light sent from ITO (tin indium oxide) layer, maximum current efficiency are 117.3cd/A.This experiment Device architecture is:ITO (tin indium oxide)/TAPC (60nm)/mcp:3 6% (12nm)/12 (20nm) of Ir (ppy)/LiF (1nm)/ Al(100nm)。
Embodiment 10:The preparation of device 14
This example illustrates the performance verification for the electroluminescent device that compound 14 is prepared as electron transport material. ITO (tin indium oxide) glass is in succession with ultrasonic cleaning 30 minutes in cleaning agent and deionized water.Then when vacuum drying 2 is small (105 DEG C), then ITO (tin indium oxide) glass is put into the oxygen plasma treatment carried out in plasma reactor 5 minutes, it is transmitted to Organic film and metal electrode are prepared in vacuum chamber, the hole-injecting material of one layer of 10nm is then prepared by the method for vacuum evaporation The hole-injecting material of 80nm thickness is then deposited in molybdenum trioxide:4,4'- cyclohexyl two [N, N- bis- (4- aminomethyl phenyls) aniline] (TAPC), the material 1 of vacuum evaporation last layer 12nm, 3- bis- (9- carbazoles) benzene are then continued through on this hole transmission layer (mcp):Three (2- phenylpyridines) close iridium (Ir (ppy) 3), are finally deposited the compound 14 of one layer of 20nm again, the LiF of 10nm thickness with The Al of 100nm.
The anode of direct current is added on ITO (tin indium oxide) layer, cathode is added on metal layer by cathode of the aluminium as device, The i.e. available bright uniform green light sent from ITO (tin indium oxide) layer, maximum current efficiency are 107.3cd/A.This experiment Device architecture is:ITO (tin indium oxide)/TAPC (60nm)/mcp:3 6% (12nm)/14 (20nm) of Ir (ppy)/LiF (1nm)/ Al(100nm)。
Embodiment 11:The preparation of device 17
This example illustrates the performance verification for the electroluminescent device that compound 17 is prepared as electron transport material. ITO (tin indium oxide) glass is in succession with ultrasonic cleaning 30 minutes in cleaning agent and deionized water.Then when vacuum drying 2 is small (105 DEG C), then ITO (tin indium oxide) glass is put into the oxygen plasma treatment carried out in plasma reactor 5 minutes, it is transmitted to Organic film and metal electrode are prepared in vacuum chamber, the hole-injecting material of one layer of 10nm is then prepared by the method for vacuum evaporation The hole-injecting material of 80nm thickness is then deposited in molybdenum trioxide:4,4'- cyclohexyl two [N, N- bis- (4- aminomethyl phenyls) aniline] (TAPC), the material 1 of vacuum evaporation last layer 12nm, 3- bis- (9- carbazoles) benzene are then continued through on this hole transmission layer (mcp):Three (2- phenylpyridines) close iridium (Ir (ppy) 3), are finally deposited the compound 17 of one layer of 20nm again, the LiF of 10nm thickness with The Al of 100nm.
The anode of direct current is added on ITO (tin indium oxide) layer, cathode is added on metal layer by cathode of the aluminium as device, The i.e. available bright uniform green light sent from ITO (tin indium oxide) layer, maximum current efficiency are 107.5cd/A.This experiment Device architecture is:ITO (tin indium oxide)/TAPC (60nm)/mcp:3 6% (12nm)/17 (20nm) of Ir (ppy)/LiF (1nm)/ Al(100nm)。
Embodiment 12:The preparation of device 22
This example illustrates the performance verification for the electroluminescent device that compound 22 is prepared as electron transport material. ITO (tin indium oxide) glass is in succession with ultrasonic cleaning 30 minutes in cleaning agent and deionized water.Then when vacuum drying 2 is small (105 DEG C), then ITO (tin indium oxide) glass is put into the oxygen plasma treatment carried out in plasma reactor 5 minutes, it is transmitted to Organic film and metal electrode are prepared in vacuum chamber, the hole-injecting material of one layer of 10nm is then prepared by the method for vacuum evaporation The hole-injecting material of 80nm thickness is then deposited in molybdenum trioxide:4,4'- cyclohexyl two [N, N- bis- (4- aminomethyl phenyls) aniline] (TAPC), the material 1 of vacuum evaporation last layer 12nm, 3- bis- (9- carbazoles) benzene are then continued through on this hole transmission layer (mcp):Three (2- phenylpyridines) close iridium (Ir (ppy) 3), are finally deposited the compound 22 of one layer of 20nm again, the LiF of 10nm thickness with The Al of 100nm.
The anode of direct current is added on ITO (tin indium oxide) layer, cathode is added on metal layer by cathode of the aluminium as device, The i.e. available bright uniform green light sent from ITO (tin indium oxide) layer, maximum current efficiency are 103.5cd/A.This experiment Device architecture is:ITO (tin indium oxide)/TAPC (60nm)/mcp:3 6% (12nm)/22 (20nm) of Ir (ppy)/LiF (1nm)/ Al(100nm)。
Application examples
As shown in figure 3, it is the luminescent spectrum figure of device 1,2,12;As shown in figure 4, current efficiency-electricity of device 1,2,12 Current density performance diagram.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and Within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention.

Claims (10)

1. sila condensed ring analog derivative, which is characterized in that with the general structure shown in formula (Ia) or formula (Ib):
Wherein:
Ar1-Ar4Phenyl or naphthyl is independently selected from, also, at least one is naphthalene;
R1-R4It is independently selected from substituted or unsubstituted C1-C20Alkane group, substitution or unsubstituted C1- C20Silane hydrocarbyl group, substitution or unsubstituted C6-C65Aromatic group, substitution or unsubstituted C6-C65Virtue Fragrant silane group, substitution or unsubstituted C5-C65Heterocyclic group, substitution or unsubstituted C6-C65Polycyclic group Group, substitution or unsubstituted C6-C65Arylene group or substitution or unsubstituted C6-C65Sub- aromatic heterocycle Group, R1-R4Identical or different, X is halogen F, Cl, Br or I.
2. sila condensed ring analog derivative according to claim 1, which is characterized in that there is the structure shown in formula (Ib) to lead to Formula, wherein:
C1-C20Alkane group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C1-C20Silane hydrocarbyl group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C6-C65Aromatic group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C6-C65Fragrant silane group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C5-C65Heterocyclic group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C6-C65Polycyclic moiety substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C6-C65Arylene group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl group;
C6-C65Sub- aromatic heterocycle group substituent group be selected from hydrogen, deuterium, halogen atom, cyano, nitro, amidino groups, hydroxyl or carbonyl acyl Base;
R1-R4It is identical or different;
X is halogen F, Cl, Br or I.
3. sila condensed ring analog derivative according to claim 2, it is characterised in that:
C5-C65Heterocyclic group be C5-C65Heteroaromatic group;
C6-C65Polycyclic moiety be C6-C65Condensing polyaromatic hydrocarbon group.
4. sila condensed ring analog derivative according to claim 1, which is characterized in that as follows:
5. sila condensed ring analog derivative according to claim 1, it is characterised in that:
R1-R4It is independently selected from the structure shown in general formula 2a-2o:
R1-R4It is identical
It is or different;
Y、R21、R22And R23It is independently substituted or non-substituted C1-C20Alkane group, substitution or it is non-substituted C1-C20Silane hydrocarbyl group, substitution or non-substituted C6-C65Aromatic group, substitution or non-substituted C6-C65Fragrance Silane group, substituted or non-substituted C6-C65Heteroaromatic group or substituted or non-substituted C6-C65Condensing polyaromatic hydrocarbon base Group, * represent the position of substitution, and p represents substitution number, and scope is integer 1-7.
6. sila condensed ring analog derivative according to claim 5, which is characterized in that Y, R21、R22Or R23In:
C1-C20Alkane group be methyl, ethyl, propyl, isopropyl, butyl, isobutyl group or tertiary butyl;
C1-C20Silane hydrocarbyl group be first silicon substrate, second silicon substrate, the third silicon substrate, isopropyl silicon substrate, fourth silicon substrate, isobutyl silicon substrate or tertiary fourth silicon Base;
C6-C65Aromatic group include at least an aromatic rings, condense or be connected by singly-bound between aromatic rings;
C6-C65Miscellaneous aromatic rings include at least a five-ring heterocycles or hexa-member heterocycle, five-ring heterocycles or hexa-member heterocycle are respectively extremely Less containing any one in nitrogen, oxygen, phosphorus or sulphur, condense or be connected by singly-bound between heterocycle.
7. sila condensed ring analog derivative according to claim 6, it is characterised in that:
C1-C20Alkane group substituent group be deuterium, halogen, hydroxyl, nitro, cyano, amido, amidino groups or carbonyl acyl group;
C1-C20Silane hydrocarbyl group substituent group be deuterium, halogen, hydroxyl, nitro, cyano, amido, amidino groups or carbonyl acyl group;
Substituted C6-C65Aromatic group include at least one by methyl, ethyl, propyl, isopropyl, butyl, isobutyl group, tertiary fourth Base, first silicon substrate, second silicon substrate, the third silicon substrate, isopropyl silicon substrate, fourth silicon substrate, isobutyl silicon substrate or the aromatic rings of tertiary fourth silicon substrate substitution;
Non-substituted C6-C65Miscellaneous aromatic group include at least one by methyl, ethyl, propyl, isopropyl, butyl, isobutyl group, Tertiary butyl, first silicon substrate, second silicon substrate, the third silicon substrate, isopropyl silicon substrate, fourth silicon substrate, isobutyl silicon substrate or the miscellaneous aromatic rings of tertiary fourth silicon substrate substitution.
8. sila condensed ring analog derivative according to any one of claims 1 to 7, which is characterized in that as follows:
9. a kind of electroluminescent device, including organic light emitting medium a pair of electrodes and setting between the electrodes, it is characterised in that: The organic light emitting medium is at least containing a kind of sila condensed ring analog derivative provided selected from claim 1 to 8.
10. a kind of application of sila condensed ring analog derivative according to any one of claims 1 to 8, it is characterised in that:As having Electron transport material and/or light emitting host material in organic electroluminescence devices.
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Publication number Priority date Publication date Assignee Title
CN109651423A (en) * 2018-12-29 2019-04-19 宁波卢米蓝新材料有限公司 A kind of dibenzo-heterocyclic compound and its preparation method and application

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Publication number Priority date Publication date Assignee Title
TW201125953A (en) * 2009-11-04 2011-08-01 Dow Advanced Display Material Ltd Novel organic electroluminescent compounds and organic electroluminescent device using the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201125953A (en) * 2009-11-04 2011-08-01 Dow Advanced Display Material Ltd Novel organic electroluminescent compounds and organic electroluminescent device using the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109651423A (en) * 2018-12-29 2019-04-19 宁波卢米蓝新材料有限公司 A kind of dibenzo-heterocyclic compound and its preparation method and application
US11342517B2 (en) 2018-12-29 2022-05-24 Ningbo Lumilan Advanced Materials Co., Ltd. Dibenzoheterocyclic compound and preparation method and application thereof

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