CN108075355A - The insensitive laser of heat based on soi structure - Google Patents
The insensitive laser of heat based on soi structure Download PDFInfo
- Publication number
- CN108075355A CN108075355A CN201611032903.3A CN201611032903A CN108075355A CN 108075355 A CN108075355 A CN 108075355A CN 201611032903 A CN201611032903 A CN 201611032903A CN 108075355 A CN108075355 A CN 108075355A
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- Prior art keywords
- waveguide
- laser
- soi structure
- silicon
- temperature coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Abstract
This application discloses a kind of insensitive lasers of heat based on soi structure, including soi structure, on soi structure and the first catoptric arrangement and the second catoptric arrangement that are correspondingly arranged, and positioned at the laser transmitter device on soi structure between the first catoptric arrangement and the second emitting structural and negative temperature coefficient waveguide, soi structure includes the silicon substrate positioned at bottom, intermediate insulating layer and the silicon positioned at top layer, the silicon of top layer is formed with silicon waveguide between laser transmitter device and negative temperature coefficient waveguide, the at least one side of negative temperature coefficient waveguide is formed with SiO 2 waveguide, active area of the laser transmitter device as laser, negative temperature coefficient waveguide is used to compensate the positive variations in refractive index of laser, so that light it is Wavelength stabilized within a preset range.The laser of the application has the insensitive feature of heat, is compensated by negative temperature coefficient waveguide, the refractive index that can be adjusted in entire laser remains unchanged at different temperature, and the output wavelength of laser remains unchanged.
Description
Technical field
The application belongs to field of laser device technology, and in particular to a kind of insensitive laser of heat based on soi structure.
Background technology
With the development of high-speed wide bandwidth, it is desirable that WDM (Wavelength Division Multiplexing, wavelength-division
Multiplexing) wavelength interval it is less and less, especially in rate after 100Gbps, WDM require wavelength a spy small scope it
Interior variation, such as LWDM (L-band WDM) communication window requirement wavelength must have to use in 2nm range changings, optical module
TEC (Thermo Electric Cooler, semiconductor cooler) carries out temperature control processing to core devices such as lasers.So exist
TEC, thermistor temperature control element are must be added in same packaged type such as QSFP, CFP, is brought greatly not to encapsulation
Just, and the presence of TEC also increases the power consumption of entire module.
The rate of change of traditional Distributed Feedback Laser wavelength with temperature is at 0.09nm/ DEG C, in the optical module of high-speed, ripple
The narrow range of long limitation, if being not added with temperature regulating device, wavelength can drift out working region and causes mould Distributed Feedback Laser at work
Block fails.
Therefore in view of the above-mentioned problems, it is necessary to provide a kind of insensitive lasers of heat based on soi structure.
The content of the invention
One embodiment of the application provides a kind of insensitive laser of heat based on soi structure, and the laser includes SOI junction
Structure, on soi structure and the first catoptric arrangement being correspondingly arranged and the second catoptric arrangement and first on soi structure
Laser transmitter device and negative temperature coefficient waveguide between catoptric arrangement and the second emitting structural, the soi structure include being located at
The silicon substrate of bottom, intermediate insulating layer and the silicon positioned at top layer, the silicon of top layer is in laser transmitter device and negative temperature coefficient ripple
Silicon waveguide is formed between leading, at least one side of the negative temperature coefficient waveguide is formed with SiO 2 waveguide, the laser hair
Active area of the emitter part as laser, the negative temperature coefficient waveguide are used to mend the positive variations in refractive index of laser
Repay so that light it is Wavelength stabilized within a preset range.
In one embodiment, the laser transmitter device is fabricated using III-V compounds of group of PTC material.
In one embodiment, the laser transmitter device pass through inverse bonding dress or bonding method and soi structure in top layer silicon
It is integrated.
In one embodiment, the material of the negative temperature coefficient waveguide is the polymer material of negative temperature coefficient.
In one embodiment, first catoptric arrangement and/or the second catoptric arrangement are reflecting grating or reflectance coating.
In one embodiment, the SiO 2 waveguide includes the one or two between silicon waveguide and negative temperature coefficient waveguide
Silica waveguide and the second SiO 2 waveguide between the first negative temperature coefficient waveguide and the second catoptric arrangement.
In one embodiment, silicon waveguide width on the direction towards the first SiO 2 waveguide is gradually reduced.
In one embodiment, the silicon waveguide is being in inverted cone-shaped structure with the interface of the first SiO 2 waveguide.
In one embodiment, silicon waveguide width on the direction towards laser transmitter device is gradually reduced.
In one embodiment, the silicon waveguide is being in inverted cone-shaped structure with the interface of laser transmitter device.
The application has the advantages that：
Laser transmitter device is directly integrated into soi structure top layer silicon, simple in structure, easily manufactured；
Light spot mode field with that can be introduced into silicon waveguide by laser transmitter device at silicon waveguide interface, SiO 2 waveguide and silicon waveguide
Light spot mode field can be introduced into SiO 2 waveguide by interface；
Laser has the insensitive feature of heat, is compensated, can adjusted in entire laser by negative temperature coefficient waveguide
Refractive index remains unchanged at different temperature, and the output wavelength of laser remains unchanged；
The silicon of top layer in partial SOI structure is substituted by SiO 2 waveguide, reduces the length of silicon waveguide, avoids the heat of silicon
Temperature coefficient influences, and it is more convenient that negative temperature coefficient waveguide compensates modulation.
Description of the drawings
Fig. 1 is the overlooking the structure diagram of the insensitive laser of heat in the application first embodiment；
Fig. 2 is the side structure schematic view of the insensitive laser of heat in the application first embodiment.
Specific embodiment
The application is described in detail below with reference to specific embodiment shown in the drawings.But these embodiments are simultaneously
The application is not limited, structure that those of ordinary skill in the art are made according to these embodiments, method or functionally
Conversion is all contained in the protection domain of the application.
In each diagram of the application, for the ease of illustration, structure or partial some sizes can be compared with other knots
Therefore structure or partial enlargement, are only used for the basic structure of the theme of diagram the application.
The term of the representation space relative position used herein such as "left", "right", " left side ", " right side " is in order at just
A unit as shown in the drawings or feature are described compared with another unit or the relation of feature in the purpose of explanation.It is empty
Between the term of relative position can be intended to include different azimuth of the equipment in using or working in addition to orientation shown in figure.
If for example, the equipment in figure is overturn, other will be located at by being described as being located at the unit of other units or feature " right side "
Unit or feature " left side ".Therefore, exemplary term " right side " can include left side and both orientation of right side.Equipment can be with
Other modes are directed（It is rotated by 90 ° or other directions）, and correspondingly explain used herein and space correlation description.
When element or layer are referred to as with another component or layer " connection ", can directly on another component or layer,
It is connected to another component or layer or there may be intermediary element or layer.On the contrary, when component is referred to as " being connected directly between another
On one component or layer " when, it is impossible to there are intermediate member or layers.
Join the first embodiment for shown in Fig. 1, Fig. 2, introducing the application laser 100.The laser 100 is based on SOI
The insensitive laser of heat of structure, including soi structure 10, on soi structure 10 and the first catoptric arrangement 21 for being correspondingly arranged
And second catoptric arrangement 22 and positioned at the laser on soi structure 10 between first catoptric arrangement 21 and the second emitting structural 22
Ballistic device 31 and the negative temperature coefficient waveguide 32 being made of negative temperature coefficient material.Soi structure 10 is included positioned at bottom
Silicon substrate（It is not shown）, intermediate insulating layer 11 and the silicon positioned at top layer, the silicon of top layer it is anti-in the first catoptric arrangement 21 and second
It penetrates between structure 22 and is formed with silicon waveguide 12, at least one side of negative temperature coefficient waveguide 32 is formed with SiO 2 waveguide 33, swashs
Light emitting devices 31 and active area of the silicon waveguide 12 as laser, negative temperature coefficient waveguide 32 are used for laser transmitter device 31
Positive variations in refractive index compensate so that light it is Wavelength stabilized within a preset range.
Specifically, SOI (Silicon-On-Insulator) is a kind of new raw material for IC manufacturing, is replaced
The body silicon (Bulk Silicon) that generation widely applies at present.The top layer of soi structure 10 is one layer of silicon (Top in present embodiment
Silicon, thickness depend on and different applications from 200 angstroms to several microns), for manufacturing device；Bottom is one layer and rides in silicon
On insulating layer.The material and silicon of this insulating layer are closer better, and the insulating layer 11 in present embodiment is silica
(SiO2), it is known as buried oxide（BOX, Buried Oxide, about 1000-4000 angstroms）.
Soi structure has the advantages that body silicon institute is incomparable：It can realize the medium isolation of component in integrated circuit, it is thorough
Bottom eliminates the parasitic latch-up in Bulk CMOS circuit；Also there is parasitic capacitance using integrated circuit made of this material
It is small, integration density is high, speed is fast, widens device operating temperature scope, it is simple for process, improve radiation resistance, short-channel effect
It is small and especially suitable for advantages such as low voltage and low power circuits.
Laser transmitter device 31 is III-V race's laser transmitter device, uses III-V race's chemical combination of PTC material
Object is fabricated, and forms laser for excitation and light is amplified；Negative temperature coefficient waveguide 32 is using negative temperature coefficient
Polymer material compensates for the positive variations in refractive index to laser, so that light is Wavelength stabilized in preset range
It is interior.
In addition, the silicon waveguide 12 of top layer falls within PTC material in soi structure 10, refractive index with temperature increasing
Increase greatly.The hot temperature coefficient of SiO 2 waveguide 33 is very low, substantially not variation with temperature and change, in the application with
Ideal situation illustrates, and wavelength of the light in SiO 2 waveguide 33 is constant under different temperatures.
III-V signified compounds of group is common semi-conducting material in the application, by the trivalent in chemical periodic table
Element（Such as aluminium, gallium, indium, thallium）And pentad（Such as nitrogen, phosphorus, arsenic, antimony, bismuth）Composition, such as indium phosphide (InP),
GaAs (GaAs) etc..Preferably, the laser transmitter device 31 in present embodiment is said by taking InP laser transmitter devices as an example
It is bright.
There are one only being formed in order to avoid the hot temperature coefficient influence of silicon, in the application on the right side of laser transmitter device 31
Silicon waveguide 12, SiO 2 waveguide 33 is equipped in the both sides of negative temperature coefficient waveguide 32, and SiO 2 waveguide 33 includes being located at
The first SiO 2 waveguide 331 between silicon waveguide 12 and negative temperature coefficient waveguide 32 and positioned at the first negative temperature coefficient ripple
32 and second the second SiO 2 waveguide 332 between catoptric arrangement 22 are led, passes through the first SiO 2 waveguide 331 and the 2nd 2
Silica waveguide 332 substitutes the silicon of 10 top layer of soi structure, substantially reduces the length of silicon waveguide, reduces silicon waveguide to hot temperature
Spend the influence of coefficient.
It should be appreciated that 32 both sides of negative temperature coefficient waveguide are substituted using SiO 2 waveguide in present embodiment
The silicon of soi structure top layer only can also set silica in the one side of negative temperature coefficient waveguide 32 in other embodiments
Waveguide, opposite side are still silicon waveguide, can equally reduce influence of the silicon waveguide to hot temperature coefficient to a certain extent.
The width on the direction towards laser transmitter device 31 of silicon waveguide 12 is gradually reduced in present embodiment, such as this implementation
Silicon waveguide 12 is being in inverted cone-shaped structure with 31 interface of laser transmitter device in mode.
The size of silicon waveguide 12 is bigger than laser transmitter device 31, and effective refractive index is also higher than laser transmitter device 31,
Light spot mode field in interface is mainly distributed in silicon waveguide 12, until light field fully enters the silicon waveguide of 10 top layer of soi structure
In 12, light field can be converted directly between silicon waveguide 12 and laser transmitter device 31.
Meanwhile the width on the direction towards negative temperature coefficient waveguide 32 of silicon waveguide 12 is gradually reduced, such as present embodiment
Middle silicon waveguide 12 is being in inverted cone-shaped structure with 331 interface of the first SiO 2 waveguide.
The light spot mode field in silicon waveguide 12 can be introduced by inverted cone-shaped structure in the first SiO 2 waveguide 331, into
And adjust the refractive index in total and remain unchanged at different temperature, the output wavelength of laser remains unchanged.
The principle of laser is that the light path ensured in laser is combined with multiple material in the application（Light path=refraction
Rate * distances）Constant, present embodiment just needs to ensure that refractive index is kept not at different temperature in the case where distance is certain
Become.
Light energy ratio shared in laser transmitter device 31 is set as A, the refractive index of laser transmitter device 31 is n1, T
For the temperature of laser transmitter device 31, temperature coefficient Δ n1=dn1/dT, Δ n1＞ 0；
Light energy ratio shared in negative temperature coefficient waveguide 32 is set as B, the refractive index of negative temperature coefficient waveguide 32 is n2, T
For the temperature of negative temperature coefficient waveguide 32, temperature coefficient Δ n2=dn2/dT, Δ n2＜ 0；
Light energy ratio shared in silicon waveguide 12 is set as B, the refractive index of silicon waveguide is n3, T be silicon waveguide temperature, temperature
Coefficient delta n3=dn3/dT, Δ n2＞ 0.
It can be drawn according to " refractive index remains unchanged at different temperature "：
A*Δn1+B*Δn2+C*Δn3=0。
Therefore, only it need to select corresponding material in the application and form laser transmitter device 31 and negative temperature coefficient waveguide 32
Afterwards so that temperature coefficient Δ n1、Δn2、Δn3Meet condition A* Δs n with A, B, C1+B*Δn2+C*Δn3=0.
Meet condition A* Δs n1+B*Δn2+C*Δn3When=0, the effective refractive index of light will not change in laser,
So as to which light path will not change.
By introducing negative temperature coefficient waveguide 32 in the application, the positive variations in refractive index of laser is compensated, with
Ensure that the effective refractive index of light in the laser is constant, so as to which the light path of light in the laser will not change, use
The wavelength of the laser transmitter device and the laser of negative temperature coefficient waveguide will not drift about.
Further, laser transmitter device 31 passes through in inverse bonding dress or the method and soi structure that are bonded in present embodiment
The silicon of top layer is integrated, and is used as the active area of laser, due to laser transmitter device 31 using PTC material III-
V compounds of group is fabricated, and the refractive index of refractive index and top layer silicon is little, and the top layer silicon of soi structure 10 is made one
A silicon waveguide, laser transmitter device 31 as active area into row energization, it is simple in structure, it is easily manufactured.
In addition, in order to which the hot temperature coefficient of silicon is further avoided to influence, the first catoptric arrangement 21 in present embodiment is
The reflectance coating of 31 side of laser transmitter device is plated on, to substitute the reflecting grating integrated in soi structure top layer silicon, to reduce top
The length of layer silicon.Second catoptric arrangement 22 is the reflecting grating being integrated on the second SiO 2 waveguide 332, is prepared simply,
And improve the integrated level of laser.
Speculum is used as by a reflectance coating and a reflecting grating in present embodiment, the shape between two speculums
Into laser transmitter device 31, negative temperature coefficient waveguide 32, silicon waveguide and SiO 2 waveguide, the modulation of laser is finally constituted
Chamber, the reflectivity of the first catoptric arrangement 21 can be higher than 90%, and the reflectivity of the second catoptric arrangement 22 can reach 46% or so.
In addition, the transmitting terminal of laser（Second catoptric arrangement, 22 one end）It is integrated to be arranged on the second SiO 2 waveguide 332,
The scalability of laser is improved, the transmitting terminal of laser can be directly connected to the optical device of other structures, such as AWG（Array
Waveguide grating device）、Modulator（Modulator）Deng.
It should be appreciated that the first catoptric arrangement 21 and the second catoptric arrangement 22 be not limited to it is anti-in the above embodiment
Film and reflecting grating are penetrated, in other embodiments, the first catoptric arrangement can also be substituted with reflecting grating, similarly, second
Catoptric arrangement can also use reflectance coating to substitute, and no longer citing illustrates one by one herein.
The application is had the advantages that by the above embodiment：
Laser transmitter device is directly integrated into soi structure top layer silicon, simple in structure, easily manufactured；
Light spot mode field with that can be introduced into silicon waveguide by laser transmitter device at silicon waveguide interface, SiO 2 waveguide and silicon waveguide
Light spot mode field can be introduced into SiO 2 waveguide by interface；
Laser has the insensitive feature of heat, is compensated, can adjusted in entire laser by negative temperature coefficient waveguide
Refractive index remains unchanged at different temperature, and the output wavelength of laser remains unchanged；
The silicon of top layer in partial SOI structure is substituted by SiO 2 waveguide, reduces the length of silicon waveguide, avoids the heat of silicon
Temperature coefficient influences, and it is more convenient that negative temperature coefficient waveguide compensates modulation.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
For bright book as an entirety, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can
With the other embodiment of understanding.
Those listed above it is a series of be described in detail only for the application feasibility embodiment specifically
Bright, they are not to limit the protection domain of the application, all equivalent implementations made without departing from the application skill spirit
Or change should be included within the protection domain of the application.
Claims (10)
1. a kind of insensitive laser of heat based on soi structure, which is characterized in that the laser includes soi structure, is located at
On soi structure and the first catoptric arrangement being correspondingly arranged and the second catoptric arrangement and the first catoptric arrangement on soi structure
And the second laser transmitter device and negative temperature coefficient waveguide between emitting structural, the soi structure include the silicon positioned at bottom
Substrate, intermediate insulating layer and the silicon positioned at top layer, the silicon of the top layer shape between laser transmitter device and negative temperature coefficient waveguide
Into there is silicon waveguide, at least one side of the negative temperature coefficient waveguide is formed with SiO 2 waveguide, and the laser transmitter device is made
For the active area of laser, the negative temperature coefficient waveguide is used to compensate the positive variations in refractive index of laser, so that
Light it is Wavelength stabilized within a preset range.
2. the heat insensitive laser according to claim 1 based on soi structure, which is characterized in that the Laser emission
Device is fabricated using III-V compounds of group of PTC material.
3. the heat insensitive laser according to claim 2 based on soi structure, which is characterized in that the Laser emission
Device is integrated by the silicon of top layer in inverse bonding dress or the method and soi structure that are bonded.
4. the heat insensitive laser according to claim 1 based on soi structure, which is characterized in that the negative temperature system
The material of number waveguide is the polymer material of negative temperature coefficient.
5. the heat insensitive laser according to claim 1 based on soi structure, which is characterized in that first reflection
Structure and/or the second catoptric arrangement are reflecting grating or reflectance coating.
6. the heat insensitive laser according to claim 1 based on soi structure, which is characterized in that the silica
Waveguide is including the first SiO 2 waveguide between silicon waveguide and negative temperature coefficient waveguide and positioned at the first negative temperature system
The second SiO 2 waveguide between number waveguide and the second catoptric arrangement.
7. the heat insensitive laser according to claim 6 based on soi structure, which is characterized in that the silicon waveguide exists
Width is gradually reduced on towards the direction of the first SiO 2 waveguide.
8. the heat insensitive laser according to claim 7 based on soi structure, which is characterized in that the silicon waveguide exists
Interface with the first SiO 2 waveguide is in inverted cone-shaped structure.
9. the heat insensitive laser according to claim 6 based on soi structure, which is characterized in that the silicon waveguide exists
Width is gradually reduced on towards the direction of laser transmitter device.
10. the heat insensitive laser according to claim 9 based on soi structure, which is characterized in that the silicon waveguide exists
Interface with laser transmitter device is in inverted cone-shaped structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611032903.3A CN108075355A (en) | 2016-11-16 | 2016-11-16 | The insensitive laser of heat based on soi structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611032903.3A CN108075355A (en) | 2016-11-16 | 2016-11-16 | The insensitive laser of heat based on soi structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877169A (en) * | 2017-03-31 | 2017-06-20 | 武汉电信器件有限公司 | A kind of insensitive laser structure of hetero-junctions heat and manufacture method based on SOI |
| CN109921282A (en) * | 2019-04-11 | 2019-06-21 | 绵阳市光联科技有限公司 | A kind of SOI hybrid integrated laser and preparation method thereof |
| CN111239900A (en) * | 2020-03-18 | 2020-06-05 | 联合微电子中心有限责任公司 | Forming SiO based on wafer bonding2Method for realizing spot-size conversion by waveguide and spot-size converter |
| JP2021527320A (en) * | 2018-06-08 | 2021-10-11 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | Optical chip with embedded laser light source |
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| US9257814B1 (en) * | 2014-12-11 | 2016-02-09 | Oracle International Corporation | Temperature-insensitive optical component |
| US20160170141A1 (en) * | 2014-08-04 | 2016-06-16 | Oracle International Corporation | Athermal hybrid optical source |
| CN105938975A (en) * | 2015-03-06 | 2016-09-14 | 华为技术有限公司 | A temperature insensitive laser |
| CN106068586A (en) * | 2014-01-20 | 2016-11-02 | 洛克利光子有限公司 | Tunable SOI laser instrument |
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| CN106068586A (en) * | 2014-01-20 | 2016-11-02 | 洛克利光子有限公司 | Tunable SOI laser instrument |
| US20160170141A1 (en) * | 2014-08-04 | 2016-06-16 | Oracle International Corporation | Athermal hybrid optical source |
| US9257814B1 (en) * | 2014-12-11 | 2016-02-09 | Oracle International Corporation | Temperature-insensitive optical component |
| CN105938975A (en) * | 2015-03-06 | 2016-09-14 | 华为技术有限公司 | A temperature insensitive laser |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877169A (en) * | 2017-03-31 | 2017-06-20 | 武汉电信器件有限公司 | A kind of insensitive laser structure of hetero-junctions heat and manufacture method based on SOI |
| JP2021527320A (en) * | 2018-06-08 | 2021-10-11 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | Optical chip with embedded laser light source |
| JP7316304B2 (en) | 2018-06-08 | 2023-07-27 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | Optical chip with embedded laser light source |
| CN109921282A (en) * | 2019-04-11 | 2019-06-21 | 绵阳市光联科技有限公司 | A kind of SOI hybrid integrated laser and preparation method thereof |
| CN109921282B (en) * | 2019-04-11 | 2020-02-18 | 光联迅通科技集团有限公司 | SOI hybrid integrated laser and preparation method thereof |
| CN111239900A (en) * | 2020-03-18 | 2020-06-05 | 联合微电子中心有限责任公司 | Forming SiO based on wafer bonding2Method for realizing spot-size conversion by waveguide and spot-size converter |
| CN111239900B (en) * | 2020-03-18 | 2022-03-29 | 联合微电子中心有限责任公司 | Forming SiO based on wafer bonding2Method for realizing spot-size conversion by waveguide and spot-size converter |
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