CN108074536A - A kind of pixel circuit and its driving method, display device - Google Patents
A kind of pixel circuit and its driving method, display device Download PDFInfo
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- CN108074536A CN108074536A CN201610994957.1A CN201610994957A CN108074536A CN 108074536 A CN108074536 A CN 108074536A CN 201610994957 A CN201610994957 A CN 201610994957A CN 108074536 A CN108074536 A CN 108074536A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
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- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of pixel circuit and its driving method, display device, including：First film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), storage capacitance and light emitting diode.The output current of first film transistor as driving element is determined by the data voltage in pixel circuit and supply voltage, it is unrelated with the threshold voltage of first film transistor, therefore, it can be to avoid flowing through the difference of the electric current of light emitting diode caused by the difference due to the threshold voltage of thin film transistor (TFT), so that the problem of display device brightness irregularities, in addition, pixel circuit provided in an embodiment of the present invention, it is initialized by the grid and drain electrode of the thin film transistor (TFT) to being used as driving element, the service life of thin film transistor (TFT) can be extended.
Description
Technical field
The present invention relates to display technology field more particularly to a kind of pixel circuit and its driving method, display devices.
Background technology
In display technology field, a display device can include multiple pixel units, each pixel unit can be right
A pixel circuit is answered, two thin film transistor (TFT) TFT (English spellings can be included in a pixel circuit：Thin Film
) and a capacitance C Transistor.As shown in Figure 1, be the circuit structure diagram of existing pixel circuit, it will be seen from figure 1 that
Two thin film field effect transistor T1 and T2, a capacitance Cs and an Organic Light Emitting Diode OLED are included in pixel circuit
(English spelling：Organic Light Emitting Diode).It, can be every by controlling during the display of display device
OLED in one pixel circuit shines so that display device shines.
Thin film transistor (TFT) T1 in Fig. 1 can be used as switch, and thin film transistor (TFT) T2 can be driving element, and Cs is storage electricity
Hold.The operation principle of pixel circuit is in Fig. 1：First, thin film transistor (TFT) T1 is opened by scanning line voltage Vsacn, and inputted
Data voltage Vdata, at this point, data voltage Vdata can charge to capacitance Cs；Secondly, closed by scanning line voltage Vsacn
Thin film transistor (TFT) T1, Vdata voltage keep stablizing, and the electric current that supply voltage Vdd is generated is driven by thin film transistor (TFT) T2 and shone
Diode OLED shines.In this way, by the way that each OLED included in display device is controlled to shine so that display device shines.
In general, when making TFT, can make to obtain using low temperature polysilicon process, still, in practical applications, by
In low temperature polysilicon process the defects of property, the threshold voltage for causing each TFT is different, in this way, in pixel circuit, in input electricity
Press it is identical in the case of, the electric current that different threshold voltages can cause to flow through OLED is different so that the brightness that OLED shines is different,
In this way, for whole display device, since the brightness that OLED shines is different, cause the brightness irregularities of display device.
The content of the invention
In view of this, an embodiment of the present invention provides a kind of pixel circuit and its driving method, display device, for solving
The problem of brightness irregularities that existing display device is shown.
The present invention provides a kind of pixel circuit, including：First film transistor, the second thin film transistor (TFT), the 3rd film
Transistor, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), storage capacitance and light emitting diode, wherein：
The source electrode of the first film transistor respectively with the drain electrode of second thin film transistor (TFT) and described 5th thin
The drain electrode connection of film transistor, the source electrode of second thin film transistor (TFT) are connected with data cable, the 5th thin film transistor (TFT)
Source electrode is connected with the first power supply；
The drain electrode of the first film transistor respectively with the source electrode of the 3rd thin film transistor (TFT) and described 4th thin
The drain electrode connection of film transistor, the drain electrode of the 3rd thin film transistor (TFT) are connected with the anode of the light emitting diode, the hair
The cathode of optical diode is connected with second source；
The grid of the first film transistor is electric with the source electrode of the 4th thin film transistor (TFT) and the storage respectively
One end connection of appearance, the other end of the storage capacitance are connected with first power supply.
Optionally, first power supply is used to provide supply voltage for first film transistor, and first power supply generates
Electric current flow into the light emitting diode；
The second source is used to provide for the grid of the first film transistor, drain electrode and the light emitting diode
Initialization voltage, electric current flows into the second source during lumination of light emitting diode.
Optionally, the grid of second thin film transistor (TFT) is connected with the first scan line, the first scanning line traffic control institute
It is in the conduction state to state the second thin film transistor (TFT) so that the data voltage that the data cable provides is to the first film transistor
Source electrode apply voltage；
The grid of 5th thin film transistor (TFT) is connected with the second scan line, and the 5th is thin described in the second scanning line traffic control
Film transistor is in the conduction state so that first power supply applies voltage to the source electrode of the first film transistor；
The grid of 4th thin film transistor (TFT) is connected with three scan line, and the three scan line control is to described first
The grid of thin film transistor (TFT) and drain electrode are initialized, and the threshold voltage of the first film transistor is compensated；
The grid of 3rd thin film transistor (TFT) is connected with the 4th scan line, and the 3rd is thin described in the 4th scanning line traffic control
Film transistor is in the conduction state so that and the second source initializes the grid of the first film transistor, and
So that electric current flows into the light emitting diode.
Optionally, the three scan line control initializes the grid of the first film transistor and drain electrode,
And the threshold voltage of the first film transistor is compensated, including：
The three scan line controls the 4th thin film transistor (TFT) in the conduction state, the first film transistor
Drain electrode is connected with grid, and the data voltage applies voltage to the source electrode of the first film transistor so that described first is thin
The grid voltage of film transistor is first node voltage, and the first node voltage is by the data voltage and described second thin
The threshold voltage of film transistor determines；
The three scan line controls the 4th thin film transistor (TFT) to be in cut-off state, in the effect of the storage capacitance
Under, the first node voltage kept stablizing within the time of a frame.
Optionally, the pixel circuit is further included to specific capacitance, wherein：
Described one end to specific capacitance respectively with the grid of the first film transistor and the 4th thin film transistor (TFT)
Source electrode connection, the other end is connected with the grid of the 4th thin film transistor (TFT), described that specific capacitance is used to increase described in use
The contrast of the display device of pixel circuit.
Optionally, the first film transistor is P-type TFT, and second thin film transistor (TFT) is p-type film
Transistor or N-type TFT, the 3rd thin film transistor (TFT) are P-type TFT or N-type TFT, described the
Four thin film transistor (TFT)s are P-type TFT or N-type TFT, and the 5th thin film transistor (TFT) is P-type TFT
Or N-type TFT.
The present invention provides a kind of driving method of pixel circuit, the scan period is divided into first stage, second stage and
Three stages, wherein：
The first stage, the second thin film transistor (TFT) described in the first scanning line traffic control are in cut-off state, and described the
5th thin film transistor (TFT) described in two scanning line traffic controls becomes cut-off state from conducting state, the three scan line control described the
Four thin film transistor (TFT)s become conducting state from cut-off state, and the 3rd thin film transistor (TFT) described in the 4th scanning line traffic control, which is in, leads
Logical state, the voltage that the second source provides initialize the grid of the first film transistor；
The second stage, the second thin film transistor (TFT) described in the first scanning line traffic control are become turning on shape from cut-off state
State, the 5th thin film transistor (TFT) described in the second scanning line traffic control be in cut-off state, and the three scan line controls described the
Four thin film transistor (TFT)s are in the conduction state, and the 3rd thin film transistor (TFT) described in the 4th scanning line traffic control is become cutting from conducting state
Only state, the data voltage that the data cable provides is by second thin film transistor (TFT) to the source of the first film transistor
Pole applies voltage, and changes the grid voltage of the first film transistor；
The phase III, the second thin film transistor (TFT) described in the first scanning line traffic control are become ending shape from conducting state
State, the 5th thin film transistor (TFT) described in the second scanning line traffic control become conducting state, the three scan line from cut-off state
The 4th thin film transistor (TFT) is controlled to become cut-off state from conducting state, the 3rd film described in the 4th scanning line traffic control is brilliant
Body pipe becomes conducting state from cut-off state, and first power supply provides supply voltage to the first film transistor, and controls
Make the lumination of light emitting diode.
Optionally, it is in and leads in the second stage, second thin film transistor (TFT) and the 4th thin film transistor (TFT)
During logical state, the data voltage applies voltage to the source electrode of the first film transistor, and the first film transistor is led
It is logical so that the voltage that the grid voltage of the first film transistor is provided from the second source becomes Vdata-Vth,
Vdata is the data voltage, and Vth is the absolute value of the threshold voltage of the first film transistor.
Optionally, it is in and leads in the phase III, the 3rd thin film transistor (TFT) and the 5th thin film transistor (TFT)
During logical state, first power supply applies voltage, the electricity that first power supply generates to the source electrode of the first film transistor
Stream flows into the light emitting diode so that the lumination of light emitting diode.
The present invention also provides a kind of display device, the display device includes above-mentioned pixel circuit.
The present invention has the beneficial effect that：
Technical solution provided in an embodiment of the present invention, the output current of the thin film transistor (TFT) as driving element is by pixel electricity
Data voltage and supply voltage in road determine, unrelated with the threshold voltage of the thin film transistor (TFT), it can thus be avoided due to thin
The difference of the electric current of light emitting diode is flowed through caused by the difference of the threshold voltage of film transistor, so that display device brightness
Non-uniform problem, in addition, pixel circuit provided in an embodiment of the present invention passes through the film crystal to being used as driving element
The grid of pipe and drain electrode are initialized, and can extend the service life of thin film transistor (TFT).
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for this
For the those of ordinary skill in field, without having to pay creative labor, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is the structure diagram of the pixel circuit included in existing display device；
Fig. 2 is a kind of structure diagram of pixel circuit provided in an embodiment of the present invention；
Fig. 3 is the structure diagram of another pixel circuit provided in an embodiment of the present invention；
Fig. 4 is a kind of sequence diagram of the driving method of pixel circuit provided in an embodiment of the present invention；
Fig. 5 is the structure diagram of another pixel circuit provided in an embodiment of the present invention；
Fig. 6 is the sequence diagram of the driving method of another pixel circuit provided in an embodiment of the present invention.
Specific embodiment
In order to achieve the object of the present invention, a kind of pixel circuit and its driving method are provided in the embodiment of the present invention, is shown
Showing device, including：First film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT), storage capacitance and light emitting diode, wherein：
The source electrode of the first film transistor respectively with the drain electrode of second thin film transistor (TFT) and described 5th thin
The drain electrode connection of film transistor, the source electrode of second thin film transistor (TFT) are connected with data cable, the 5th thin film transistor (TFT)
Source electrode is connected with the first power supply；
The drain electrode of the first film transistor respectively with the source electrode of the 3rd thin film transistor (TFT) and described 4th thin
The drain electrode connection of film transistor, the drain electrode of the 3rd thin film transistor (TFT) are connected with the anode of the light emitting diode, the hair
The cathode of optical diode is connected with second source；
The grid of the first film transistor is electric with the source electrode of the 4th thin film transistor (TFT) and the storage respectively
One end connection of appearance, the other end of the storage capacitance are connected with first power supply.
In this way, the output current of the thin film transistor (TFT) as driving element is by the data voltage in pixel circuit and power supply electricity
Pressure determine, it is unrelated with the threshold voltage of the thin film transistor (TFT), it can thus be avoided due to thin film transistor (TFT) threshold voltage not
With the difference of the caused electric current for flowing through light emitting diode, so that the problem of display device brightness irregularities, in addition,
Pixel circuit provided in an embodiment of the present invention is carried out initial by the grid and drain electrode of the thin film transistor (TFT) to being used as driving element
Change, the service life of thin film transistor (TFT) can be extended.
It should be noted that in embodiments of the present invention, the first film transistor is driving transistor, described second
Thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and the 5th thin film transistor (TFT) can be with
Regard switch as.Wherein, the first film transistor is P-type TFT, and second thin film transistor (TFT) can be that p-type is thin
Film transistor or N-type TFT, the 3rd thin film transistor (TFT) can be P-type TFT, can also N
Type thin film transistor (TFT), the 4th thin film transistor (TFT) can be P-type TFT or N-type TFT, described
5th thin film transistor (TFT) can be P-type TFT or N-type TFT.
That is, in the pixel circuit, the first film transistor is P-type TFT, described second
Thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT) and the 5th thin film transistor (TFT) can be P
Type thin film transistor (TFT) can also be N-type TFT, and can also be one of thin film transistor (TFT) is p-type film crystal
Pipe, the other three thin film transistor (TFT) is N-type TFT, etc. the embodiment of the present invention is not specifically limited.
The present invention is described in further detail below in conjunction with the accompanying drawings, it is clear that described embodiment is only this hair
Bright part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
There is all other embodiment made and obtained under the premise of creative work, belong to the scope of protection of the invention.
Embodiment 1
Fig. 2 is a kind of structure diagram of pixel circuit provided in an embodiment of the present invention.
It is brilliant with the first film transistor, second thin film transistor (TFT), the 3rd film in the embodiment of the present invention
Body pipe, the 4th thin film transistor (TFT) and the 5th thin film transistor (TFT) are to illustrate exemplified by P-type TFT.
As shown in Fig. 2, the pixel circuit includes：First film transistor T1, the second thin film transistor (TFT) T2, the 3rd film
Transistor T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, storage capacitance C1 and light emitting diode OLED, wherein：
The source electrode of the first film transistor T1 respectively with the drain electrode of the second thin film transistor (TFT) T2 and described
The drain electrode connection of five thin film transistor (TFT) T5, the source electrode of the second thin film transistor (TFT) T2 are connected with data cable VDATA, and the described 5th
The source electrode of thin film transistor (TFT) T5 is connected with the first power vd D；
The drain electrode of the first film transistor T1 respectively with the source electrode of the 3rd thin film transistor (TFT) T3 and described the
The drain electrode connection of four thin film transistor (TFT) T4, the drain electrode of the 3rd thin film transistor (TFT) T3 and the anode of the light emitting diode OLED
Connection, the cathode of the light emitting diode OLED are connected with second source VSS；
The grid of the first film transistor T1 is respectively with the source electrode of the 4th thin film transistor (TFT) T4 and described depositing
Storing up electricity holds one end connection of C1, and the other end of the storage capacitance C1 is connected with the first power vd D.
In the pixel circuit, first film transistor T1 flows through described shine as driving element, the electric current of output
Diode OLED drives the light emitting diode OLED to shine.
Specifically, the first power vd D is used to provide supply voltage for the first film transistor T1, and is described
Light emitting diode provides electric current；
The second source VSS is used for grid, drain electrode and the light-emitting diodes for the first film transistor T1
Pipe OLED provides initialization voltage, and electric current flows into the second source VSS when light emitting diode OLED shines.
The pixel circuit can receive the first power vd D and described that external circuit provides by power supply cabling
Two power supply VSS, wherein, the first power vd D provides supply voltage, first power supply for the first film transistor T1
The electric current of VDD flows into the light emitting diode by the 5th thin film transistor (TFT) T5 and first film transistor T1
OLED so that the light emitting diode OLED shines；The cathode phase of the second source VSS and the light emitting diode OLED
Even, initialization voltage can be provided for the light emitting diode；The anode of the light emitting diode OLED and the first film
The drain electrode connection of transistor T1, the second source VSS pass through the light emitting diode OLED and the 3rd thin film transistor (TFT)
T3 provides initialization voltage for the grid of the first film transistor T1 and drain electrode, and the light emitting diode OLED is shining
When, the electric current for flowing through the light emitting diode OLED flows into the second source.
The grid of the second thin film transistor (TFT) T2 is connected with the first scan line S1, and the first scan line S1 provides scanning letter
Number, in order to control the conducting and cut-off of the second thin film transistor (TFT) T2, in this way, described in the first scan line S1 controls
When second thin film transistor (TFT) T2 is in the conduction state, the data voltage that the data cable provides passes through second thin film transistor (TFT)
T2 applies voltage to the source electrode of the first film transistor T1.
Here data voltage is provided by external driving chip, and inputs the pixel by the data cable VDATA
Circuit.
The grid of the 5th thin film transistor (TFT) T5 is connected with the second scan line S2, and the second scan line S2 provides scanning letter
Number, in order to control the conducting and cut-off of the 5th thin film transistor (TFT) T5, in this way, described in the second scan line S2 controls
When 5th thin film transistor (TFT) T5 is in the conduction state, the first power vd D is by the 5th thin film transistor (TFT) T5, to described
The source electrode of first film transistor T1 applies voltage.
The grid of the 4th thin film transistor (TFT) T4 is connected with three scan line S3, and three scan line S3 provides scanning letter
Number, in order to control the conducting and cut-off of the 4th thin film transistor (TFT) T4, the 4th film is controlled in three scan line S3
When transistor T4 is in the conduction state, it can control and the grid of the first film transistor T1 and drain electrode are initialized,
And the threshold voltage of the first film transistor T1 is compensated so that in the pixel circuit, the first film
Voltages and the data cable of the transistor T1 to the electric current between the light emitting diode OLED by the first power vd D
The data voltage that VDATA is provided determines, unrelated with the threshold voltage of the first film transistor T1.
Specifically, when three scan line S3 controls the 4th thin film transistor (TFT) T4 in the conduction state, described first
The drain electrode of thin film transistor (TFT) T1 is connected with grid, when the second thin film transistor (TFT) T2 is in the conduction state, data voltage
VDATA applies voltage by the second thin film transistor (TFT) T2 to the source electrode of the first film transistor T1 so that described the
The grid voltage of one thin film transistor (TFT) T1 changes, and the grid voltage after variation is by the data voltage VDATA and described
The threshold voltage of first film transistor T1 determines.
In embodiments of the present invention, the grid voltage after the first film transistor T1 can be changed is known as first segment
Point voltage.
When three scan line S3 controls the 4th thin film transistor (TFT) T4 to be in cut-off state, and in the 5th film
When transistor T5 is in the conduction state, under the action of the storage capacitance C1, the grid electricity of the first film transistor T1
Pressure (i.e. described first node voltage) can remain unchanged within the time of a frame, realize to the first film transistor T1's
Threshold voltage compensation so that the first film transistor T1 to the electric current between the light emitting diode OLED can be by described
The voltage of first power vd D and the data voltage determine, unrelated with the threshold voltage of the first film transistor T1.
The grid of the 3rd thin film transistor (TFT) T3 is connected with the 4th scan line S4, and the 4th scan line S4 provides scanning letter
Number, in order to control the conducting and cut-off of the 3rd thin film transistor (TFT) T3, in this way, described in the 4th scan line S4 controls
When 3rd thin film transistor (TFT) T3 is in the conduction state, the second source VSS is by the light emitting diode OLED, to described
The grid and source electrode of one thin film transistor (TFT) T1 is initialized.In addition, it is in the 3rd thin film transistor (TFT) T3
During state, the electric current that the first power vd D is generated can be caused to flow into the light emitting diode OLED.
Optionally, the pixel circuit is further included to specific capacitance, wherein：
Described one end to specific capacitance respectively with the grid of the first film transistor and the 4th thin film transistor (TFT)
Source electrode connection, the other end is connected with the grid of the 4th thin film transistor (TFT), described that specific capacitance is used to increase described in use
The contrast of the display device of pixel circuit.
It in practical applications, can be in pixel electricity in order to improve the contrast of the pixel circuit of above-mentioned record
Increase by one in road to specific capacitance.
As shown in figure 3, being the structure diagram of another pixel circuit provided in an embodiment of the present invention, capacitance C2 is in figure
To specific capacitance, for increasing the contrast of pixel circuit shown in Fig. 3, wherein, one end of capacitance C2 is brilliant with the first film respectively
The grid of the source electrode connection of the grid and the 4th thin film transistor (TFT) T4 of body pipe T1, the other end of capacitance C2 and the 4th thin film transistor (TFT) T4
Pole connects.
Embodiment 2
Fig. 4 is a kind of sequence diagram of the driving method of pixel circuit provided in an embodiment of the present invention.The following institute of the method
It states.
In embodiments of the present invention, the scan period of the pixel circuit includes first stage, second stage and the 3rd rank
Section, wherein：
The first stage, the first scan line S1 control the second thin film transistor (TFT) T2 to be in cut-off state, institute
Stating the second scan line S2 controls the 5th thin film transistor (TFT) T5 to become cut-off state, the three scan line S3 from conducting state
The 4th thin film transistor (TFT) T4 is controlled to become conducting state from cut-off state, the 4th scan line S4 controls the described 3rd are thin
Film transistor T3 is in the conduction state, and the voltage that the second source VSS is provided is to the grid of the first film transistor T1
It is initialized；
The second stage, the first scan line S1 control the second thin film transistor (TFT) T2 to become leading from cut-off state
Logical state, the second scan line S2 control the 5th thin film transistor (TFT) T5 to be in cut-off state, the three scan line S3
Control the 4th thin film transistor (TFT) T4 in the conduction state, the 4th scan line S4 controls the 3rd thin film transistor (TFT) T3
Cut-off state is become from conducting state, the data voltage VDATA that the data cable provides passes through the second thin film transistor (TFT) T2
Apply voltage to the source electrode of the first film transistor T1, and change the grid voltage of the first film transistor T1；
The phase III, the first scan line S1 control the second thin film transistor (TFT) T2 to become cutting from conducting state
Only state, the second scan line S2 control the 5th thin film transistor (TFT) T5 to become conducting state from cut-off state, and described the
Three scan line S3 controls the 4th thin film transistor (TFT) T4 to become cut-off state, the 4th scan line S4 controls from conducting state
The 3rd thin film transistor (TFT) T3 becomes conducting state from cut-off state, and the first power vd D is to the first film crystal
Pipe T1 provides supply voltage, and the light emitting diode OLED is controlled to shine.
In Fig. 4, the first stage is the t1 stages, and the second stage is the t2 stages, and the stage after t2 is luminous
The glow phase of diode, i.e., described phase III.
It should be noted that in embodiments of the present invention, the thin film transistor (TFT) included in the pixel circuit is that p-type is thin
Film transistor for P-type TFT, passes through the voltage for the scanning signal that scan line loads on the grid of thin film transistor (TFT)
For high level when, thin film transistor (TFT) is in cut-off state, and the scanning loaded on the grid of thin film transistor (TFT) by scan line is believed
Number voltage be low level when, thin film transistor (TFT) is in the conduction state.
Therefore, as shown in figure 4, in the first stage, scanning signal that the first scan line S1 is provided and described
The scanning signal that second scan line S2 is provided is high level, the scanning signal and the described 4th of the three scan line S3 offers
The scanning signal that scan line S4 is provided is low level；In the scanning signal that the second stage, the first scan line S1 provide
Low level is become from high level, the scanning signal that the second scan line S2 is provided keeps high level, the three scan line S3
The scanning signal of offer keeps low level, and the scanning signal that the 4th scan line S4 is provided becomes high level from low level；
The phase III, the scanning signal that the scanning signal and the three scan line S3 that the first scan line S1 is provided provide
High level is become from low level, what the scanning signal and the 4th scan line S4 that the second scan line S2 is provided provided sweeps
It retouches signal and low level is become from high level.
In embodiments of the present invention, before the scan period is entered, in the pixel circuit, the first scan line S1 is provided
The voltage of scanning signal can be high level, the voltage for the scanning signal that the second scan line S2 is provided can be low level, the
The voltage for the scanning signal that three scan line S3 is provided can be high level, and the voltage for the scanning signal that the 4th scan line S4 is provided can
To be low level, that is to say, that into before the scan period, the second thin film transistor (TFT) T2 and the 4th film crystal
Pipe T4 may be at cut-off state, and the 5th thin film transistor (TFT) T5 and the 3rd thin film transistor (TFT) T3 may be at conducting shape
State.
When into the scan period, the high and low level of difference that the scan line in the pixel circuit provides can be passed through
Scanning signal, controls the thin film transistor (TFT) included in the pixel circuit in the conduction state or cut-off state, and then controls institute
State the lumination of light emitting diode in pixel circuit.
It in embodiments of the present invention, i.e., in the first stage, can be to described when the pixel circuit enters the scan period
The grid for the first film transistor T1 that pixel circuit includes is initialized.
Specifically, as shown in figure 4, in the first stage, scanning signal that the first scan line S1 is provided keeps high level, and second
The scanning signal that scan line S2 is provided becomes high level from low level, and the scanning signal that three scan line S3 is provided is become by high level
For low level, the scanning signal that the 4th scan line S4 is provided keeps low level.
In this way, it is high level in the voltage that the grid of the second thin film transistor (TFT) T2 loads, the second film is brilliant in the first stage
Body pipe T2 is in cut-off state, in the voltage that the grid of the 5th thin film transistor (TFT) T5 loads for high level, the 5th thin film transistor (TFT)
T5 is in cut-off state, in the voltage that the grid of the 4th thin film transistor (TFT) T4 loads for low level, at the 4th thin film transistor (TFT) T4
It is low level in the voltage that the grid of the 3rd thin film transistor (TFT) T3 loads, the 3rd thin film transistor (TFT) T3 is in and leads in conducting state
Logical state.
At this point, since the 3rd thin film transistor (TFT) T3 and the 4th thin film transistor (TFT) T4 are in the conduction state, then, with the hair
The second source VSS of the cathode connection of optical diode OLED can initialize the grid of first film transistor T1.
At the end of in the first stage, the grid voltage of first film transistor T1 can be close to the second source
The negative pressure of voltage Vss, wherein, the Vss is negative pressure.
After the grid to first film transistor T1 initializes, the pixel circuit enters second stage.
In second stage, as shown in figure 4, the scanning signal that the first scan line S1 is provided becomes low level from high level, institute
The scanning signal for stating the second scan line S2 offers keeps high level, and the scanning signal that three scan line S3 is provided keeps low level,
The scanning signal that 4th scan line S4 is provided becomes high level from low level.
It is low level in the voltage that the grid of the second thin film transistor (TFT) T2 loads, the second film is brilliant in this way, in second stage
Body pipe T2 is in the conduction state, in the voltage that the grid of the 5th thin film transistor (TFT) T5 loads for high level, the 5th thin film transistor (TFT)
T5 is in cut-off state, in the voltage that the grid of the 4th thin film transistor (TFT) T4 loads for low level, at the 4th thin film transistor (TFT) T4
It is high level in the voltage that the grid of the 3rd thin film transistor (TFT) T3 loads, the 3rd thin film transistor (TFT) T3, which is in, to be cut in conducting state
Only state.
In the second thin film transistor (TFT) T2 and the 4th thin film transistor (TFT) T4 in the conduction state, data cable VDATA
The data voltage of offer applies voltage by the second thin film transistor (TFT) T2 to the source electrode of first film transistor T1, at this point, first
Thin film transistor (TFT) T1 is in the conduction state.
During second stage, first film transistor T1 is in the conduction state, at the end of second stage, first
The grid voltage of thin film transistor (TFT) T1 becomes Vdata-Vth from the voltage Vss that second source VSS is provided, wherein, Vdata is institute
Data voltage is stated, Vth is the absolute value of the threshold voltage of first film transistor T1.
By second stage, the grid voltage of first film transistor T1 is Vdata-Vth, at this point, the pixel circuit
The phase III can be entered.
In the phase III, as shown in figure 4, what scanning signal and three scan line S3 that the first scan line S1 is provided provided
Scanning signal becomes high level from low level, the scanning that the scanning signal and the 4th scan line S4 that the second scan line S2 is provided provide
Signal becomes low level from high level.
It is high level in the voltage that the grid of the second thin film transistor (TFT) T2 loads, the second film is brilliant in this way, in the phase III
Body pipe T2 is in cut-off state, in the voltage that the grid of the 5th thin film transistor (TFT) T5 loads for low level, the 5th thin film transistor (TFT)
T5 is in the conduction state, in the voltage that the grid of the 4th thin film transistor (TFT) T4 loads for high level, at the 4th thin film transistor (TFT) T4
It is low level in the voltage that the grid of the 3rd thin film transistor (TFT) T3 loads, the 3rd thin film transistor (TFT) T3 is in and leads in cut-off state
Logical state.
When the 3rd thin film transistor (TFT) T3 and the 5th thin film transistor (TFT) T5 is turned on, the first power vd D passes through the 5th
Thin film transistor (TFT) T5 applies voltage, the source electrode and drain voltage of first film transistor T1 to the source electrode of first film transistor T1
Difference is Vdd- (Vdata-Vth)-Vth=Vdd-Vdata, wherein, Vdd is the voltage of first power supply.
At this point, the electric current that the first power vd D is generated flows into light emitting diode OLED so that light emitting diode OLED shines,
Wherein, the electric current for flowing through light emitting diode OLED is expressed as：
Ion=1/2 μ Cox·W/L·(Vdd-Vdata)2, μ be first film transistor T1 electron mobility, Cox
For the unit-area capacitance of first film transistor T1, W/L is the length-width ratio of first film transistor T1.
From above-mentioned formula as can be seen that flowing through the electric current of light emitting diode OLED and the threshold value electricity of first film transistor T1
Press Vth it is unrelated, and then can to avoid due to Vth it is inconsistent caused by display device brightness irregularities the problem of.
Technical solution provided in an embodiment of the present invention, the output current of the thin film transistor (TFT) as driving element is by pixel electricity
Data voltage and supply voltage in road determine, unrelated with the threshold voltage of the thin film transistor (TFT), it can thus be avoided due to thin
The difference of the electric current of light emitting diode is flowed through caused by the difference of the threshold voltage of film transistor, so that display device brightness
Non-uniform problem, in addition, pixel circuit provided in an embodiment of the present invention passes through the film crystal to being used as driving element
The grid of pipe and drain electrode are initialized, and can extend the service life of thin film transistor (TFT).
Embodiment 3
As shown in figure 5, Fig. 5 is the structure diagram of another pixel circuit provided in an embodiment of the present invention.
The embodiment of the present invention is brilliant with the first film transistor, second thin film transistor (TFT) and the 5th film
Body pipe is P-type TFT, and the 3rd thin film transistor (TFT) and the 4th thin film transistor (TFT) are that N-type TFT is
Example illustrates.
In the pixel circuit shown in Fig. 5, first film transistor T1, the second thin film transistor (TFT) T2 and the 5th film are brilliant
Body pipe T5 is P-type TFT, and the 3rd thin film transistor (TFT) T3 and the 4th thin film transistor (TFT) T4 are N-type TFT.
It should be noted that based on the content that above-described embodiment 1 and embodiment 2 are recorded, in three ranks of scan period
Duan Zhong, in same stage：When the second thin film transistor (TFT) T2 of first scan line S1 controls is in cut-off state, the 4th scan line S4 controls
It is in the conduction state to make the 3rd thin film transistor (TFT) T3；First scan line S1 controls the second thin film transistor (TFT) T2 in the conduction state
When, the 4th scan line S4 controls the 3rd thin film transistor (TFT) T3 to be in cut-off state.I.e. in same stage, the first scan line S1 is provided
Scanning signal level and the 4th scan line S4 provide scanning signal level it is opposite.
In the embodiment of the present application, the 3rd thin film transistor (TFT) T3 is replaced with into N-type TFT by P-type TFT
Afterwards, characteristic is switched off and on based on P-type TFT and N-type TFT, in same stage：If the first scanning
Line S1 controls the second thin film transistor (TFT) T2 to be in cut-off state, and the 3rd thin film transistor (TFT) T3 of the 4th scan line S4 controls is in and leads
Logical state, then, the scanning signal that the first scan line S1 is provided is high level, and the scanning signal that the 4th scan line S4 is provided also is
High level；If the first scan line S1 controls the second thin film transistor (TFT) T2 in the conduction state, and the 4th scan line S4 controls the
Three thin film transistor (TFT) T3 are in cut-off state, then, the scanning signal that the first scan line S1 is provided is low level, the 4th scan line
The scanning signal that S4 is provided also is low level.
In conclusion after the 3rd thin film transistor (TFT) T3 is replaced with N-type TFT by P-type TFT, sweeping
In the three phases for retouching the cycle, in the same stage：The level and the 4th scan line for the scanning signal that first scan line S1 is provided
The level for the scanning signal that S4 is provided is identical.Therefore, in the embodiment of the present application, the scanning that the first scan line S1 can be provided
The scanning signal that signal and the 4th scan line S4 are provided is provided by same scan line.
Based on above-mentioned principle, in Fig. 3 for the 4th thin film transistor (TFT) T4 provide the three scan line S3 of scanning signal with
And the second scan line S2 of scanning signal is provided for the 5th thin film transistor (TFT) T5, the 4th thin film transistor (TFT) T4 is brilliant by p-type film
After body pipe replaces with N-type TFT, the second scan line S2 scanning signals provided and three scan line S3 can be carried
The scanning signal of confession is provided by same scan line.
As shown in figure 5, the scan line in pixel circuit shown in Fig. 5 and the scan line phase in pixel circuit shown in Fig. 3
Than, difference lies in：4th scan line S4 is incorporated into the first scan line S1, and it is brilliant for the second film simultaneously by the first scan line S1
Body pipe T2 and the 3rd thin film transistor (TFT) T3 provides scanning signal and (is equal to the first scan line S1 to carry for the second thin film transistor (TFT) T2
For scanning signal, the 4th scan line S4 provides scanning signal for the 3rd thin film transistor (TFT) T3)；Three scan line S3 is incorporated into
Two scan line S2, and be simultaneously that the 4th thin film transistor (TFT) T4 and the 5th thin film transistor (TFT) T5 provide scanning by the second scan line S2
Signal (is equal to the second scan line S2 and provides scanning signal for the 5th thin film transistor (TFT) T5, three scan line S3 is the 4th film
Transistor T4 provides scanning signal).
It as shown in figure 5, can be by the grid of the second thin film transistor (TFT) T2 and the grid and first of the 3rd thin film transistor (TFT) T3
Scan line S1 is connected, by the grid of the grid of the 5th thin film transistor (TFT) T5 and the 4th thin film transistor (TFT) T4 and the second scan line S2 phases
Even.
In this way, for the first scan line S1, when the scanning signal that the first scan line S1 is provided is low level, the second film
Transistor T2 is in the conduction state, and the 3rd thin film transistor (TFT) T3 is in cut-off state；In the scanning letter that the first scan line S1 is provided
Number be high level when, the second thin film transistor (TFT) T2 is in cut-off state, and the 3rd thin film transistor (TFT) T3 is in the conduction state.
For the second scan line S2, when the scanning signal that the second scan line S2 is provided is low level, the 5th thin film transistor (TFT)
T5 is in the conduction state, and the 4th thin film transistor (TFT) T4 is in cut-off state；It is height in the scanning signal that the second scan line S2 is provided
During level, the 5th thin film transistor (TFT) T5 is in cut-off state, and the 4th thin film transistor (TFT) T4 is in the conduction state.
As shown in fig. 6, the sequence diagram of the driving method for the pixel circuit shown in Fig. 5.
In the embodiment of the present application, the first scan line S1 as shown in Figure 5 is thin for the 3rd thin film transistor (TFT) T3 and second
Film transistor T2 provides scanning signal, and control the 3rd thin film transistor (TFT) T3 and the second thin film transistor (TFT) T2 is in the conduction state or cuts
Only state, the second scan line S2 as shown in Figure 5 is that the 4th thin film transistor (TFT) T4 and the 5th thin film transistor (TFT) T5 provide scanning
Signal, the 4th thin film transistor (TFT) T4 and the 5th thin film transistor (TFT) T5 is in the conduction state or cut-off state for control.
From fig. 6, it can be seen that the scan period of the pixel circuit shown in Fig. 5 can be divided into three phases:First stage,
Two-stage and phase III, wherein, the first stage is the t1 stages, and the second stage is the t2 stages, the rank after t2
Section be light emitting diode glow phase, i.e., the described phase III.
Optionally, can be high level into the scanning signal that before the scan period, the first scan line S1 is provided, second
The scanning signal that scan line S2 is provided can be low level, and the first scan line S1 controls the second thin film transistor (TFT) T2 to be in cut-off shape
State, the 3rd thin film transistor (TFT) T3 of control is in the conduction state, and the second scan line S2 controls the 4th thin film transistor (TFT) T4 to be in cut-off
State, the 5th thin film transistor (TFT) T5 of control are in the conduction state.
After the scan period is entered, in the first stage, the scanning signal holding high level that the first scan line S1 is provided, second
The scanning signal that scan line S2 is provided becomes high level from low level, and the first scan line S1 controls the second thin film transistor (TFT) T2 to be in
Cut-off state, control the 3rd thin film transistor (TFT) T3 it is in the conduction state, the second scan line S2 control the 4th thin film transistor (TFT) T4 by
Cut-off state becomes conducting state, and the 5th thin film transistor (TFT) T5 of control becomes cut-off state from conducting state；
In second stage, the scanning signal that the first scan line S1 is provided becomes low level, the second scan line S2 from high level
The scanning signal of offer keeps high level, and the first scan line S1 controls the second thin film transistor (TFT) T2 to be become turning on shape from cut-off state
State, the 3rd thin film transistor (TFT) T3 of control become cut-off state from conducting state, and the second scan line S2 controls the 4th thin film transistor (TFT)
T4 is in the conduction state, and the 5th thin film transistor (TFT) T5 of control is in cut-off state；
In the phase III, the scanning signal that the first scan line S1 is provided becomes high level, the second scan line S2 from low level
The scanning signal of offer becomes low level from high level, and the first scan line S1 controls the second thin film transistor (TFT) T2 to be become by conducting state
For cut-off state, the 3rd thin film transistor (TFT) T3 of control becomes conducting state from cut-off state, and the second scan line S2 controls the 4th are thin
Film transistor T4 becomes cut-off state from conducting state, and the 5th thin film transistor (TFT) T5 of control becomes conducting state from cut-off state.
Pixel circuit shown in Fig. 5 is in the specific work of the first stage, the second stage and the phase III
It is identical in the concrete operating principle in each stage of scan period with the pixel circuit shown in Fig. 2 of above-mentioned record to make principle, this
In be not repeated to describe.
In addition, the embodiment of the present invention additionally provides a kind of display device, the pixel circuit including above-mentioned record.
It will be understood by those skilled in the art that although preferred embodiments of the present invention have been described, but skill in the art
Art personnel once know basic creative concept, then other change and modification can be made to these embodiments.It is so appended
Claim is intended to be construed to include preferred embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from model of the invention by those skilled in the art
It encloses.In this way, if these modifications and changes of the present invention belongs within the scope of the claims in the present invention and its equivalent technologies, then
The present invention is also intended to comprising including these modification and variations.
Claims (10)
1. a kind of pixel circuit, which is characterized in that including：First film transistor, the second thin film transistor (TFT), the 3rd film crystal
Pipe, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), storage capacitance and light emitting diode, wherein：
The source electrode of the first film transistor is brilliant with the drain electrode of second thin film transistor (TFT) and the 5th film respectively
The drain electrode connection of body pipe, the source electrode of second thin film transistor (TFT) are connected with data cable, the source electrode of the 5th thin film transistor (TFT)
It is connected with the first power supply；
The drain electrode of the first film transistor is brilliant with the source electrode of the 3rd thin film transistor (TFT) and the 4th film respectively
The drain electrode connection of body pipe, the drain electrode of the 3rd thin film transistor (TFT) are connected with the anode of the light emitting diode, and described luminous two
The cathode of pole pipe is connected with second source；
The grid of the first film transistor respectively with the source electrode of the 4th thin film transistor (TFT) and the storage capacitance
One end connects, and the other end of the storage capacitance is connected with first power supply.
2. pixel circuit as described in claim 1, which is characterized in that
First power supply is used to provide supply voltage, the electric current stream that first power supply generates for the first film transistor
Enter the light emitting diode；
The second source is used to provide initially for the grid of the first film transistor, drain electrode and the light emitting diode
Change voltage, electric current flows into the second source during lumination of light emitting diode.
3. pixel circuit as described in claim 1, which is characterized in that
The grid of second thin film transistor (TFT) is connected with the first scan line, and the second film described in the first scanning line traffic control is brilliant
Body pipe is in the conduction state so that the data voltage that the data cable provides applies electricity to the source electrode of the first film transistor
Pressure；
The grid of 5th thin film transistor (TFT) is connected with the second scan line, and the 5th film described in the second scanning line traffic control is brilliant
Body pipe is in the conduction state so that first power supply applies voltage to the source electrode of the first film transistor；
The grid of 4th thin film transistor (TFT) is connected with three scan line, and the three scan line control is to the first film
The grid of transistor and drain electrode are initialized, and the threshold voltage of the first film transistor is compensated；
The grid of 3rd thin film transistor (TFT) is connected with the 4th scan line, and the 3rd film described in the 4th scanning line traffic control is brilliant
Body pipe is in the conduction state so that the second source initializes the grid of the first film transistor, and causes
Electric current flows into the light emitting diode.
4. pixel circuit as claimed in claim 3, which is characterized in that the three scan line control is brilliant to the first film
The grid of body pipe and drain electrode are initialized, and the threshold voltage of the first film transistor is compensated, including：
The three scan line controls the 4th thin film transistor (TFT) in the conduction state, the drain electrode of the first film transistor
It is connected with grid, the data voltage applies voltage to the source electrode of the first film transistor so that the first film is brilliant
The grid voltage of body pipe is first node voltage, and the first node voltage is brilliant by the data voltage and the first film
The threshold voltage of body pipe determines；
The three scan line controls the 4th thin film transistor (TFT) to be in cut-off state, under the action of the storage capacitance,
The first node voltage kept stablizing within the time of a frame.
5. pixel circuit as described in claim 1, which is characterized in that the pixel circuit is further included to specific capacitance, wherein：
Described one end to specific capacitance source with the grid of the first film transistor and the 4th thin film transistor (TFT) respectively
Pole connects, and the other end is connected with the grid of the 4th thin film transistor (TFT), described to use the pixel to specific capacitance for increasing
The contrast of the display device of circuit.
6. such as pixel circuit described in any one of claim 1 to 5, which is characterized in that the first film transistor is thin for p-type
Film transistor, second thin film transistor (TFT) be P-type TFT or N-type TFT, the 3rd thin film transistor (TFT)
For P-type TFT or N-type TFT, the 4th thin film transistor (TFT) is P-type TFT or N-type film crystal
Pipe, the 5th thin film transistor (TFT) are P-type TFT or N-type TFT.
It is 7. a kind of such as the driving method of claim 1 to 6 any one of them pixel circuit, which is characterized in that the scan period point
For first stage, second stage and phase III, wherein：
The first stage, first scanning the second thin film transistor (TFT) of line traffic control are in cut-off state, the second scanning line traffic control the 5th
Thin film transistor (TFT) becomes cut-off state from conducting state, and three scan line controls the 4th thin film transistor (TFT) to become leading from cut-off state
Logical state, the 4th scanning the 3rd thin film transistor (TFT) of line traffic control is in the conduction state, and the voltage that second source provides is to the first film
The grid of transistor is initialized；
The second stage, the second thin film transistor (TFT) described in the first scanning line traffic control become conducting state from cut-off state,
5th thin film transistor (TFT) described in the second scanning line traffic control is in cut-off state, and the three scan line control the described 4th is thin
Film transistor is in the conduction state, and the 3rd thin film transistor (TFT) described in the 4th scanning line traffic control is become ending shape from conducting state
State, the data voltage that the data cable provides are applied by the source electrode of the second thin film transistor (TFT) to the first film transistor
Making alive, and change the grid voltage of the first film transistor；
The phase III, the second thin film transistor (TFT) described in the first scanning line traffic control become cut-off state from conducting state,
5th thin film transistor (TFT) described in the second scanning line traffic control becomes conducting state, the three scan line control from cut-off state
4th thin film transistor (TFT) becomes cut-off state, the 3rd thin film transistor (TFT) described in the 4th scanning line traffic control from conducting state
Conducting state is become from cut-off state, first power supply provides supply voltage to the first film transistor, and controls institute
State lumination of light emitting diode.
8. the driving method of pixel circuit as claimed in claim 7, which is characterized in that in the second stage, described second
When thin film transistor (TFT) and the 4th thin film transistor (TFT) in the conduction state, the data voltage is to the first film crystal
The source electrode of pipe applies voltage, the first film transistor conducting so that the grid voltage of the first film transistor is by institute
The voltage for stating second source offer becomes Vdata-Vth, and Vdata is the data voltage, and Vth is the first film transistor
Threshold voltage absolute value.
9. the driving method of pixel circuit as claimed in claim 8, which is characterized in that in the phase III, the described 3rd
When thin film transistor (TFT) and the 5th thin film transistor (TFT) in the conduction state, first power supply is to the first film crystal
The source electrode of pipe applies voltage, and the electric current that first power supply generates flows into the light emitting diode so that the light emitting diode
It shines.
10. a kind of display device, which is characterized in that including：Such as claim 1 to 6 any one of them pixel circuit.
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| CN110034132A (en) * | 2019-06-12 | 2019-07-19 | 成都京东方光电科技有限公司 | A kind of array substrate, display panel and display device |
| US11903272B2 (en) | 2019-06-12 | 2024-02-13 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate, display panel and display apparatus |
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