CN108059166A - A kind of fluctuation-type carbonization silicon preparation method and its heating unit - Google Patents
A kind of fluctuation-type carbonization silicon preparation method and its heating unit Download PDFInfo
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- CN108059166A CN108059166A CN201711442829.7A CN201711442829A CN108059166A CN 108059166 A CN108059166 A CN 108059166A CN 201711442829 A CN201711442829 A CN 201711442829A CN 108059166 A CN108059166 A CN 108059166A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses the speed of a kind of fluctuation-type carbonization silicon preparation method and its heating unit, periodically adjusting thermal current so that the mixture of carbon source and silicon source carries out periodic reverse motion between the first suspension chamber and the second suspension chamber, ultimately generates carborundum；The heating unit of the present invention includes thermal current injector, suspension tank, gas ejector, collecting bin；The present invention changes the preparation mode of traditional static state high-temperature heating so that the mixture of carbon source and silicon source carries out periodic reverse motion between the first suspension chamber and the second suspension chamber, and production efficiency improves, and solves the problems, such as that carborundum is hardened.
Description
Technical field
The present invention relates to carbonization silicon preparation methods, more particularly to fluctuation-type carbonization silicon preparation method.
Background technology
Existing carbonization silicon preparation method is utilized in quartz sand periphery layer overlay carbon, and one is then then covered with outside carbon
Layer quartz sand repaves the carbon-coating of last layer coal or petroleum coke for raw material, the quartz sand and carbon layers having thicknesses difference of every layer of laying, paving
If being heated at high temperature 7 days or more time after good, react to form SiC by silica and carbon, but so preparation method efficiency
It is very low, modern allegro production is not met, in addition the method for this preparation so that the carborundum to be formed is block shape
State, producer need to crush the carborundum of block, and workload is very big, not only takes, but also increase the production of enterprise
Cost.
The content of the invention
In view of the above shortcomings of the prior art part, the present invention solve the problems, such as be：A kind of efficient, anti-blocking of production is provided
The hardened fluctuation-type carbonization silicon preparation method of SiClx.
To solve the above problems, the technical solution that the present invention takes is as follows：
A kind of fluctuation-type carbonization silicon preparation method, step are as follows：
S1, the carbon source and silicon source for choosing reaction；Carbon source and silicon source by crusher are crushed respectively, make carbon source and the silicon source be in
Particle shape；
S2, the carbon source of particle shape and silicon source are put into agitator tank are mixed, make carbon source and silicon source full and uniform
Mixing；
S3, uniformly mixed carbon source and silicon source are fitted into gas ejector, are then turned on thermal current injector, spray thermal current
The suspension tank injection thermal current of emitter upward, by thermal current to being preheated in suspension tank；
S4, open the first suspension chamber one side in suspension tank and enter bin gate, by gas ejector by the mixture of carbon source and silicon source
The first suspension intracavitary of suspension tank is spurted into, the motive force that the thermal current sprayed by thermal current injector generates makes carbon source and silicon
The mixture in source is suspended in the first suspension intracavitary of suspension tank, is then shut off into bin gate carbon source and silicon source being made to carry out pyroreaction,
Adjusting the speed of thermal current makes the carbon source of the first suspension intracavitary and the mixture of silicon source be moved downward to the second suspension intracavitary, then
Adjusting the speed of thermal current again makes the carbon source of the second suspension intracavitary and the mixture of silicon source be moved upward to the first suspension intracavitary, such as
This periodically adjusts the speed of thermal current so that the mixture of carbon source and silicon source is between the first suspension chamber and the second suspension chamber
Periodic reverse motion is carried out, ultimately generates carborundum；
After S5, reaction finish, the carborundum of generation is pushed into the first suspension intracavitary, opens the pan feeding of the first suspension chamber one side
Then the discharge door of door and opposite side enters bin gate using the first suspension chamber one side of gas ejector alignment, passes through gas injection
The gas push effect of device makes carborundum push in the collecting bin on the outside of discharge door.
Further, the carbon source is one or more of graphite, wooden carbon, coke, Petrocarbon.
Further, the silicon source is silica.
Further, the broken time in the step S1 is 20 to 30min.
Further, the mixing time of agitator tank is 20 to 25min in the step S2；Rotating speed is 100 to 120r/min.
Further, the jet velocity of thermal current injector is 20 to 30m/s in the step S3；The temperature control of thermal current
System is at 600 to 800 degrees Celsius.
Further, the temperature control of thermal current is at 1500 to 1600 degrees Celsius in the step S4, the reaction time 1.2
To 1.5h.
Further, thermal current is sprayed when the mixture of carbon source and silicon source is located at the first suspension intracavitary in the step S4
The jet velocity of device is 20 to 30m/s；The thermal current injector when the mixture of carbon source and silicon source is located at the second suspension intracavitary
Jet velocity is 14 to 18m/s.
A kind of heating unit, including thermal current injector, suspension tank, gas ejector, collecting bin；In the suspension tank
Portion is equipped with the first suspension chamber and the second suspension chamber；The first suspension chamber and the second suspension chamber communicates；Described first suspends
Chamber is located above the second suspension chamber；The bottom opening of the suspension tank；The suspension tank upper end is equipped with multiple snorkels；Institute
The both sides for the first suspension chamber stated are respectively equipped with into bin gate and discharge door；The thermal current injector is mounted on the bottom of suspension tank
Portion；The gas ejector, which is mounted on the outside of suspension tank and is directed at the first suspension chamber, enters bin gate；The collecting bin peace
On the outside of suspension tank and positioned at the lower section of discharge door.
Beneficial effects of the present invention
The present invention changes the preparation mode of traditional static state high-temperature heating, the speed of the invention by periodically adjusting thermal current
Degree so that the mixture of carbon source and silicon source carries out periodic reverse suspended motion between the first suspension chamber and the second suspension chamber,
The high temperature of thermal current provides the reaction condition of carbon source and silicon source simultaneously, significantly increases carbon source and silicon source reaction efficiency；Simultaneously
Due to the flow at high speed of thermal current so that thermal current the granulate mixture of carbon source and silicon source is generated high temperature friction and carbon source and
The mixture of silicon source carries out periodic reverse suspended motion between the first suspension chamber and the second suspension chamber, generates fluctuation, and then
Carbon source and silicon source is made to be under the suspended state fluctuated up and down and be reacted, so the carborundum prepared is also particle shape
, avoid hardened problem.
Description of the drawings
Fig. 1 is the structure diagram of heating unit of the present invention.
Specific embodiment
Present invention is described in further detail below in conjunction with the accompanying drawings.
Embodiment 1
As shown in Figure 1, a kind of fluctuation-type carbonization silicon preparation method, step are as follows：
S1, the carbon source and silicon source for choosing reaction.Carbon source is graphite, and silicon source is silica.Carbon source and silicon source are passed through into crusher respectively
It is crushed, making carbon source and silicon source, it is 20 min to crush the time in particle shape.
S2, the carbon source of particle shape and silicon source are put into agitator tank are mixed, make carbon source and silicon source abundant
Uniformly mixing, the mixing time of agitator tank is 20 min；Rotating speed is 100 r/min.
S3, uniformly mixed carbon source and silicon source are fitted into gas ejector 3, are then turned on thermal current injector 1, make heat
The suspension tank 2 of steam jet atomizer 1 upward sprays thermal current, by thermal current to being preheated in suspension tank 2, thermal current injection
The jet velocity of device 1 is 20 m/s；The temperature of thermal current is controlled at 600 degrees Celsius.
S4, open the first suspension chamber one side in suspension tank 2 and enter bin gate 23, by gas ejector 3 by carbon source and silicon source
Mixture spurt into the first suspension chamber 21 of suspension tank 2, pass through thermal current injector 1 spray thermal current generate promotion
Power makes the mixture of carbon source and silicon source be suspended in the first suspension chamber 21 of suspension tank 2, be then shut off into bin gate 23 make carbon source and
Silicon source carries out pyroreaction, and adjusting the speed of thermal current moves down the mixture of carbon source in the first suspension chamber 21 and silicon source
To the second suspension chamber 25, then adjust again the speed of thermal current make the mixture of carbon source in the second suspension chamber 25 and silicon source to
On be moved in the first suspension chamber 21, so periodically adjust thermal current speed so that the mixture of carbon source and silicon source exists
Periodic reverse motion is carried out between first suspension chamber 21 and the second suspension chamber 25, ultimately generates carborundum, the temperature of thermal current
At 1500 degrees Celsius, the reaction time is 1.2 h for control.It is hanged in the step S4 when the mixture of carbon source and silicon source is located at first
The jet velocity of thermal current injector is 20 m/s when in floating chamber 21；When the mixture of carbon source and silicon source is located at the second suspension intracavitary
When thermal current injector jet velocity be 14 m/s.Regulating cycle is the spray for adjusting a thermal current injector every 10 minutes
Firing rate degree.
After S5, reaction finish, the carborundum of generation is pushed in the first suspension chamber 21, opens the first suspension chamber 21 1
Then the discharge door 24 for entering bin gate 23 and opposite side of side is directed at the pan feeding of 21 one side of the first suspension chamber using gas ejector 3
Door 23 makes carborundum push in the collecting bin 4 in 24 outside of discharge door by the gas push effect of gas ejector 3.
Embodiment 2
As shown in Figure 1, a kind of fluctuation-type carbonization silicon preparation method, step are as follows：
S1, the carbon source and silicon source for choosing reaction.Carbon source is wooden carbon and coke, silicon source are silica.Carbon source and silicon source are passed through respectively
Crusher is crushed, and making carbon source and silicon source, it is 25min to crush the time in particle shape.
S2, the carbon source of particle shape and silicon source are put into agitator tank are mixed, make carbon source and silicon source abundant
Uniformly mixing, the mixing time of agitator tank is 22min；Rotating speed is 110r/min.
S3, uniformly mixed carbon source and silicon source are fitted into gas ejector, are then turned on thermal current injector, make hot gas
Flow the suspension tank injection thermal current of injector upward, by thermal current to being preheated in suspension tank, thermal current injector
Jet velocity is 25m/s；The temperature of thermal current is controlled at 700 degrees Celsius.
S4, open the first suspension chamber one side in suspension tank and enter bin gate, by gas ejector by the mixed of carbon source and silicon source
The first suspension intracavitary that object spurts into suspension tank is closed, the motive force that the thermal current sprayed by thermal current injector generates makes carbon source
The first suspension intracavitary of suspension tank is suspended in the mixture of silicon source, is then shut off making carbon source and silicon source progress high temperature anti-into bin gate
Should, adjusting the speed of thermal current makes the carbon source of the first suspension intracavitary and the mixture of silicon source be moved downward to the second suspension intracavitary,
Then adjusting the speed of thermal current again makes the carbon source of the second suspension intracavitary and the mixture of silicon source be moved upward to the first suspension chamber
It is interior, so periodically adjust the speed of thermal current so that the mixture of carbon source and silicon source suspends in the first suspension chamber and second
Periodic reverse motion is carried out between chamber, ultimately generates carborundum；, the temperature control of thermal current is at 1550 degrees Celsius, reaction
Between be 1.35h.In the step S4 when the mixture of carbon source and silicon source is located at the first suspension intracavitary thermal current injector
Jet velocity is 25m/s；The jet velocity of thermal current injector when the mixture of carbon source and silicon source is located at the second suspension intracavitary
For 16m/s.Regulating cycle is the jet velocity for adjusting a thermal current injector every 10 minutes.
After S5, reaction finish, the carborundum of generation is pushed into the first suspension intracavitary, opens the first suspension chamber one side
Enter the discharge door of bin gate and opposite side, then enter bin gate using the first suspension chamber one side of gas ejector alignment, pass through gas
The gas push effect of injector makes carborundum push in the collecting bin on the outside of discharge door.
Embodiment 3
As shown in Figure 1, a kind of fluctuation-type carbonization silicon preparation method, step are as follows：
S1, the carbon source and silicon source for choosing reaction.Carbon source is graphite and Petrocarbon, and silicon source is silica.Carbon source and silicon source are led to respectively
It crosses crusher to be crushed, making carbon source and silicon source, it is 30min to crush the time in particle shape.
S2, the carbon source of particle shape and silicon source are put into agitator tank are mixed, make carbon source and silicon source abundant
Uniformly mixing, the mixing time of agitator tank is 25min；Rotating speed is 120r/min.
S3, uniformly mixed carbon source and silicon source are fitted into gas ejector, are then turned on thermal current injector, make hot gas
Flow the suspension tank injection thermal current of injector upward, by thermal current to being preheated in suspension tank, thermal current injector
Jet velocity is 29m/s；The temperature of thermal current is controlled at 800 degrees Celsius.
S4, open the first suspension chamber one side in suspension tank and enter bin gate, by gas ejector by the mixed of carbon source and silicon source
The first suspension intracavitary that object spurts into suspension tank is closed, the motive force that the thermal current sprayed by thermal current injector generates makes carbon source
The first suspension intracavitary of suspension tank is suspended in the mixture of silicon source, is then shut off making carbon source and silicon source progress high temperature anti-into bin gate
Should, adjusting the speed of thermal current makes the carbon source of the first suspension intracavitary and the mixture of silicon source be moved downward to the second suspension intracavitary,
Then adjusting the speed of thermal current again makes the carbon source of the second suspension intracavitary and the mixture of silicon source be moved upward to the first suspension chamber
It is interior, so periodically adjust the speed of thermal current so that the mixture of carbon source and silicon source suspends in the first suspension chamber and second
Periodic reverse motion is carried out between chamber, ultimately generates carborundum；The temperature control of thermal current is at 1600 degrees Celsius, the reaction time
For 1.5h.In the step S4 when the mixture of carbon source and silicon source is located at the first suspension intracavitary thermal current injector injection
Speed is 29m/s；The jet velocity of thermal current injector is when the mixture of carbon source and silicon source is located at the second suspension intracavitary
17m/s.Regulating cycle is the jet velocity for adjusting a thermal current injector every 10 minutes.
After S5, reaction finish, the carborundum of generation is pushed into the first suspension intracavitary, opens the first suspension chamber one side
Enter the discharge door of bin gate and opposite side, then enter bin gate using the first suspension chamber one side of gas ejector alignment, pass through gas
The gas push effect of injector makes carborundum push in the collecting bin on the outside of discharge door.
The structure of the heating unit of the present invention is illustrated below：
As shown in Figure 1, a kind of heating unit, including thermal current injector 1, suspension tank 2, gas ejector 3, collecting bin 4.It is described
Suspension tank 2 be internally provided with the first suspension chamber 21 and the second suspension chamber 25.The first suspension chamber 21 and the second suspension chamber 25
It communicates.The first suspension chamber 21 is located at 25 top of the second suspension chamber.The bottom opening of the suspension tank 2.Described is outstanding
2 upper end of buoyant tank is equipped with multiple snorkels 22.The both sides of the first suspension chamber 21 are respectively equipped with into bin gate 23 and discharge door 24.
The thermal current injector 1 is mounted on the bottom of suspension tank 2.The gas ejector 3 be mounted on the outside of suspension tank 2 and
Be directed at the first suspension chamber 21 enters bin gate 23.The collecting bin 4 is mounted on 2 outside of suspension tank and under discharge door 24
Side.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention god.
Claims (9)
- The silicon preparation method 1. a kind of fluctuation-type is carbonized, which is characterized in that step is as follows：S1, the carbon source and silicon source for choosing reaction；Carbon source and silicon source by crusher are crushed respectively, make carbon source and the silicon source be in Particle shape；S2, the carbon source of particle shape and silicon source are put into agitator tank are mixed, make carbon source and silicon source full and uniform Mixing；S3, uniformly mixed carbon source and silicon source are fitted into gas ejector, are then turned on thermal current injector, spray thermal current The suspension tank injection thermal current of emitter upward, by thermal current to being preheated in suspension tank；S4, open the first suspension chamber one side in suspension tank and enter bin gate, by gas ejector by the mixture of carbon source and silicon source The first suspension intracavitary of suspension tank is spurted into, the motive force that the thermal current sprayed by thermal current injector generates makes carbon source and silicon The mixture in source is suspended in the first suspension intracavitary of suspension tank, is then shut off into bin gate carbon source and silicon source being made to carry out pyroreaction, Adjusting the speed of thermal current makes the carbon source of the first suspension intracavitary and the mixture of silicon source be moved downward to the second suspension intracavitary, then Adjusting the speed of thermal current again makes the carbon source of the second suspension intracavitary and the mixture of silicon source be moved upward to the first suspension intracavitary, such as This periodically adjusts the speed of thermal current so that the mixture of carbon source and silicon source is between the first suspension chamber and the second suspension chamber Periodic reverse motion is carried out, ultimately generates carborundum；After S5, reaction finish, the carborundum of generation is pushed into the first suspension intracavitary, opens the pan feeding of the first suspension chamber one side Then the discharge door of door and opposite side enters bin gate using the first suspension chamber one side of gas ejector alignment, passes through gas injection The gas push effect of device makes carborundum push in the collecting bin on the outside of discharge door.
- The silicon preparation method 2. fluctuation-type according to claim 1 is carbonized, which is characterized in that the carbon source is graphite, wood One or more of carbon, coke, Petrocarbon.
- The silicon preparation method 3. fluctuation-type according to claim 1 is carbonized, which is characterized in that the silicon source is silica.
- The silicon preparation method 4. fluctuation-type according to claim 1 is carbonized, which is characterized in that broken in the step S1 Time is 20 to 30min.
- The silicon preparation method 5. fluctuation-type according to claim 1 is carbonized, which is characterized in that agitator tank in the step S2 Mixing time be 20 to 25min；Rotating speed is 100 to 120r/min.
- The silicon preparation method 6. fluctuation-type according to claim 1 is carbonized, which is characterized in that thermal current in the step S3 The jet velocity of injector is 20 to 30m/s；The temperature of thermal current is controlled at 600 to 800 degrees Celsius.
- The silicon preparation method 7. fluctuation-type according to claim 1 is carbonized, which is characterized in that thermal current in the step S4 Temperature control at 1500 to 1600 degrees Celsius, the reaction time is 1.2 to 1.5h.
- The silicon preparation method 8. fluctuation-type according to claim 1 is carbonized, which is characterized in that work as carbon source in the step S4 The jet velocity of thermal current injector is 20 to 30m/s when being located at the first suspension intracavitary with the mixture of silicon source；When carbon source and silicon The jet velocity of thermal current injector is 14 to 18m/s when the mixture in source is located at the second suspension intracavitary.
- 9. a kind of heating unit, which is characterized in that including thermal current injector, suspension tank, gas ejector, collecting bin；It is described Suspension tank be internally provided with the first suspension chamber and the second suspension chamber；The first suspension chamber and the second suspension chamber communicates；It is described The first suspension chamber be located above the second suspension chamber；The bottom opening of the suspension tank；The suspension tank upper end is equipped with more A snorkel；The both sides of the first suspension chamber are respectively equipped with into bin gate and discharge door；The thermal current injector installation In the bottom of suspension tank；The gas ejector, which is mounted on the outside of suspension tank and is directed at the first suspension chamber, enters bin gate；Institute The collecting bin stated is mounted on the outside of suspension tank and positioned at the lower section of discharge door.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711442829.7A CN108059166B (en) | 2017-12-27 | 2017-12-27 | Preparation method of fluctuation type silicon carbide and heating device thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711442829.7A CN108059166B (en) | 2017-12-27 | 2017-12-27 | Preparation method of fluctuation type silicon carbide and heating device thereof |
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| CN108059166A true CN108059166A (en) | 2018-05-22 |
| CN108059166B CN108059166B (en) | 2021-04-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5738310A (en) * | 1980-08-11 | 1982-03-03 | Hiroshige Suzuki | Manufacturing apparatus for fine powder of silicon carbide or silicon nitride |
| CN104495851A (en) * | 2015-01-20 | 2015-04-08 | 郑州金烨科技发展有限公司 | Method and special apparatus for improving surface purity and surface cleanliness of silicon carbide particles |
| CN106082227A (en) * | 2016-06-07 | 2016-11-09 | 清华大学 | A kind of fluidized-bed chemical vapor deposition preparation method of nanometer silicon carbide granule |
| CN106276826A (en) * | 2016-06-13 | 2017-01-04 | 合肥学院 | System for synthesizing silicon nitride by adopting fluidized bed reactor |
-
2017
- 2017-12-27 CN CN201711442829.7A patent/CN108059166B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5738310A (en) * | 1980-08-11 | 1982-03-03 | Hiroshige Suzuki | Manufacturing apparatus for fine powder of silicon carbide or silicon nitride |
| CN104495851A (en) * | 2015-01-20 | 2015-04-08 | 郑州金烨科技发展有限公司 | Method and special apparatus for improving surface purity and surface cleanliness of silicon carbide particles |
| CN106082227A (en) * | 2016-06-07 | 2016-11-09 | 清华大学 | A kind of fluidized-bed chemical vapor deposition preparation method of nanometer silicon carbide granule |
| CN106276826A (en) * | 2016-06-13 | 2017-01-04 | 合肥学院 | System for synthesizing silicon nitride by adopting fluidized bed reactor |
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