CN108037638A - Super resolution lithography method and device based on flexible hinge structure - Google Patents
Super resolution lithography method and device based on flexible hinge structure Download PDFInfo
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- CN108037638A CN108037638A CN201711316112.8A CN201711316112A CN108037638A CN 108037638 A CN108037638 A CN 108037638A CN 201711316112 A CN201711316112 A CN 201711316112A CN 108037638 A CN108037638 A CN 108037638A
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- mask
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- supporting platform
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7038—Alignment for proximity or contact printer
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a kind of super resolution lithography method and device based on flexible hinge structure, including uv-exposure module, inspection flat-die block, alignment modules, flexible hinge projective lens, wafer-supporting platform module and supporting rack；Uv-exposure module, inspection flat-die block, alignment modules and flexible hinge projective lens are installed on upper backup pad, and wafer-supporting platform module is installed on lower supporting plate.In flexible hinge super resolution lithography device provided by the present invention, wafer-supporting platform moves up, mask and substrate is set slowly to contact, in contact process, acted in the smaller power that is adjacent on flexible hinge, mask is rotated around it by mutually orthogonal two axis of geometric center, complete to develop, avoid producing lateral displacement.
Description
Technical field
The present invention relates to technical field of nano-processing, and in particular to a kind of super resolution lithography side based on flexible hinge structure
Method and device.
Background technology
It is well known that SP photoetching techniques, as near field photolithography pattern, working distance is shorter, and the working distance of different resolution is only
There are hundred nanometers to several nanometers.In order to meet working distance requirement, usually require to suck by blow pressurization and vacuum in exposure
Mode makes mask be adjacent to leveling as far as possible with substrate.It is existing to be adjacent in leveling technology, more using the side such as ball head structure, bellows
Formula, or using modes such as air pressures.
The mask and substrate used in existing SP photoetching processes is all hard substrate, during, mask and substrate
It is uneven to be adjacent to power, is adjacent to unstable, causes to be adjacent to that the effect is relatively poor；Bigger lateral displacement even is produced, is reduced pair
Quasi- precision.For this reason, researcher proposes the concept that flexible hinge develops, i.e.,：After leveling, mask and substrate are adjacent to, is led to
Excessive axle position moving stage is held out against upwards so that mask and substrate adaptively develop.
Flexible hinge super resolution lithography device it is smaller be adjacent to power effect under, can realize the patch of mask and substrate
It is flat；During leveling, lateral displacement is very small, which has higher alignment precision；The device has more stable
Performance, the characteristics of embodying " soft, accurate, steady " of flexible hinge super resolution lithography device.
The content of the invention
In order to meet super resolution lithography working distance requirement, existing method is typically necessary by the side such as vacuumize, blow
Formula carries out auxiliary and is adjacent to leveling.It is big that these leveling modes are not only adjacent to power, and can produce lateral displacement, is unfavorable for super-resolution set
Carve the development of Alignment Process.The present invention proposes a kind of flexible hinge super resolution lithography experimental provision, the flexible hinge super-resolution
Lithographic equipment has the characteristics that " soft, accurate, steady ".
It is a further object to provide one kind to include flexible hinge super resolution lithography method.
The technical solution adopted by the present invention is：A kind of super resolution lithography device based on flexible hinge structure, including it is ultraviolet
Exposure light source, inspection flat-die block, alignment modules, flexible hinge projective lens, wafer-supporting platform module and supporting rack, supporting rack include upper branch
Fagging and lower supporting plate, supporting rack are installed on shock insulation platform, and uv-exposure light source is installed on upper backup pad, inspection flat-die block peace
Loaded on upper backup pad, alignment modules are installed on upper backup pad, and flexible hinge photoetching head is installed on upper backup pad, wafer-supporting platform
Module is installed on lower supporting plate.
Further, the uv-exposure light source, for producing uniform exposing light beam, uv-exposure optical source wavelength scope
For 365 ± 5nm, light field uniformity is more than 95%, and light field area is more than 120mm × 120mm, and power density is more than 15mw/cm2,
Working distance is more than 200mm, and divergence half-angle is less than 3 °.
Further, the inspection flat-die block, using non-contact detection method, the parallelism error requirement of detection is less than 1 ',
Device will be flat according to inspection as a result, automatic adjustment wafer-supporting platform module, realizes the leveling of mask plate and substrate.
Further, the alignment modules, including displacement platform, CCD, lens barrel, lighting source, speculum, CCD are installed on position
In moving stage, lens barrel is installed on CCD, and lighting source is installed on lens barrel, and speculum is installed on the lens barrel, wherein displacement platform
The free degree with six direction, for telltale mark and focusing.
Further, the flexible hinge projective lens, including installing plate, flexible hinge, mask installing plate and mask plate,
Flexible hinge is installed on installing plate, and mask installing plate is installed on flexible hinge lower end, and mask plate is installed on mask installing plate.
Further, the flexible hinge projective lens, are moved up by wafer-supporting platform module, substrate and mask is slowly connect
Touch, developed so that mask rotates completion around it by two mutually orthogonal axis of geometric center, which reduces substrate
With the lateral displacement produced in mask contact process.
Further, the flexible hinge, selected materials have good intensity, more than 980Mpa, hardness 45HRC-
50HRC, elasticity and anti-fatigue performance.
Further, in the flexible hinge, flexible unit includes circle, ellipse, arch etc., the processing essence of flexible unit
Degree requires to be higher than 20 μm.
Further, the wafer-supporting platform module, wafer-supporting platform module includes multiaxis displacement platform module, wafer-supporting platform and substrate, more
Axle position moving stage is installed on lower mounting bracket, and wafer-supporting platform is installed on multiaxis displacement platform, and substrate is installed on wafer-supporting platform；
The wafer-supporting platform module, for adsorbing, moves substrate, adjusts the depth of parallelism and tightening degree between mask and substrate；
The wafer-supporting platform, comprising pedestal and porous ceramics, porous ceramics is distributed in inside and outside two regions, and equipped with mutually solely
Vertical gas circuit, it is possible to achieve subregion adsorbs and blows；When blowing, interior zone is first blown, after-blow perimeter, can effectively arrange
Except the air between mask and substrate.
A kind of super resolution lithography method based on flexible hinge structure, using the flexible hinge super resolution lithography device into
The step of row exposure, includes：
Step 1：The wafer-supporting platform is moved to loading position, load substrates by the wafer-supporting platform module.
Step 2：The wafer-supporting platform module is moved to exposure position, and the substrate is placed in the visual field of the inspection flat-die block
It is interior, illuminated by the lighting system of the inspection flat-die block, be imaged in probe unit, gather mask and substrate image information, meter
The depth of parallelism of the mask and the substrate is calculated, according to result of calculation, control wafer-supporting platform module carries out leveling to mask and substrate.
Step 3：The lighting system illumination of the alignment modules, is imaged in probe unit, by gathering mask " ten " word
The image of mark and substrate square mark, calculates the relative position of mask and substrate, and mobile or rotation wafer-supporting platform is quickly real
Existing coarse alignment；Then the Moire fringe image of the mask and the substrate is gathered, calculates the phase of the mask and the substrate
To position, move or rotate the wafer-supporting platform, fine registration is carried out to the mask and the substrate.
Step 4：The wafer-supporting platform moves up, and mask and substrate is slowly contacted, in contact process, in smaller patch
Clamp force is acted on flexible hinge, mask is rotated around it by mutually orthogonal two axis of geometric center, is completed to develop, keep away
Exempt to produce lateral displacement.
Step 5：The uv-exposure light source produces light beam, is irradiated to the mask, is arrived by the imaging system images
On substrate, exposure is completed.
Step 6：After end exposure, the uv-exposure light source stops producing light beam, and the wafer-supporting platform moves down, and makes described cover
Mould and the substrate separation.
Step 7：The wafer-supporting platform steps to next exposure position.
Step 8：Step 4, step 5, step 6, step 7 are repeated in, until completing all position exposures.
Step 9：The wafer-supporting platform is moved to unloading position, unloads the substrate.
The present invention compared with prior art the advantages of be：
(1) present invention can effectively reduce the horizontal sliding of mask and substrate in contact process, improve alignment precision.
(2) present invention can effectively reduce contact force, avoid mask and damaged substrate.
Brief description of the drawings
On technical scheme, the attached drawing for combining the embodiment of the present invention is described in detail；It is described
Embodiment is the part of the embodiment of the present invention, rather than all.
Fig. 1 is that the structure diagram of the specific embodiment of flexible hinge super resolution lithography device provided by the present invention (is faced
Figure).
Fig. 2 is that the structure diagram of the specific embodiment of flexible hinge super resolution lithography device provided by the present invention (is overlooked
Figure).
Fig. 3 is the alignment modules schematic diagram of the specific embodiment of flexible hinge super resolution lithography device provided by the present invention.
Fig. 4 is the flexible hinge projective lens of the specific embodiment of flexible hinge super resolution lithography device provided by the present invention
Schematic diagram.
Fig. 5 is the wafer-supporting platform module signal of the specific embodiment of flexible hinge super resolution lithography device provided by the present invention
Figure.
Fig. 6 is the wafer-supporting platform schematic diagram of the specific embodiment of flexible hinge super resolution lithography device provided by the present invention.
Reference numeral implication is in figure：1 is uv-exposure light source, and 2 be inspection flat-die block, and 3 be alignment modules, and 4 be flexible hinge
Chain projective lens, 5 be wafer-supporting platform, and 6 be support plate, and 301 be displacement platform, and 302 be CCD, and 303 be lens barrel, and 304 be lighting source,
305 be speculum, and 401 be flexible hinge installing plate, and 402 be flexible hinge, and 403 be mask installing plate, and 404 be mask, and 501 are
Multiaxis displacement platform, 502 be wafer-supporting platform, and 503 be substrate, and 5021 be pedestal, and 5022 be porous ceramics.
Embodiment
The specific embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Fig. 1 is that the structure diagram of the specific embodiment of flexible hinge super resolution lithography device provided by the present invention (is faced
Figure), the flexible hinge super resolution lithography experimental provision, including：Produce the ultraviolet source 1 of uv-exposure light beam, for leveling
Inspection flat-die block 2, the alignment modules 3 for overlay alignment, the flexible hinge projective lens 4 for photoetching, carry for carrying
The wafer-supporting platform module 5 of substrate, the supporting rack 6 for installing each module.
Supporting rack 6 includes upper backup pad 7 and lower supporting plate 8, and supporting rack 5 is installed on shock insulation platform, uv-exposure light source 1
It is installed on upper backup pad 7, inspection flat-die block 2 is installed on upper backup pad 7, and alignment modules 3 are installed on upper backup pad 7, flexible
Hinge photoetching head is installed on upper backup pad 7, and wafer-supporting platform module 5 is installed on lower supporting plate 8.
The uv-exposure light source 1, for producing uniform exposing light beam, uv-exposure optical source wavelength scope for 365 ±
5nm, light field uniformity are more than 95%, and light field area is more than 120mm × 120mm, and power density is more than 15mw/cm2, and working distance is big
In 200mm, divergence half-angle is less than 3 °.
The material that mask uses is more than 90% for the transmitance of 365nm ultraviolet sources, and refractive index is more than 1.5, such as stone
English or sapphire.
Alignment modules are divided to coarse alignment and two step of fine alignment to complete, and " ten " word is marked as coarse alignment, carries out coarse alignment；Will
Moire fringe is marked as fine alignment, carries out fine alignment.
The inspection flat-die block 2, using non-contact detection method, the parallelism error requirement of detection is less than 1 ', and device is by root
Put down according to inspection as a result, automatic adjustment wafer-supporting platform module 5, realizes the leveling of mask plate 404 and substrate 503.
The alignment modules 3, including displacement platform 301, CCD 302, lens barrel 303, lighting source 304, speculum 305, CCD
302 are installed on displacement platform 301, and lens barrel 303 is installed on CCD 302, and lighting source 304 is installed on lens barrel 303, reflection
Mirror 305 is installed on the lens barrel 303, and wherein displacement platform 301 has the free degree of six direction, for telltale mark and right
It is burnt.
The flexible hinge projective lens 4, including installing plate 401, flexible hinge 402, mask installing plate 403 and mask plate
404, flexible hinge 402 is installed on installing plate 401, and mask installing plate 403 is installed on 402 lower end of flexible hinge, mask plate 404
It is installed on mask installing plate 403.
The flexible hinge projective lens 4, are moved up by wafer-supporting platform module 5, substrate 503 and mask 404 is slowly contacted,
Developed so that mask 404 rotates completion around it by two mutually orthogonal axis of geometric center, which reduces substrate
503 and 404 contact process of mask in the lateral displacement that produces.
The flexible hinge 402, selected materials have good intensity, more than 980Mpa, hardness 45HRC-50HRC, bullet
Property and anti-fatigue performance.
In the flexible hinge 402, flexible unit includes circle, ellipse, arch etc., the requirement on machining accuracy of flexible unit
Higher than 20 μm.
The wafer-supporting platform module 5, wafer-supporting platform module includes multiaxis displacement platform module 501, wafer-supporting platform 502 and substrate 503, more
Axle position moving stage 501 is installed on lower mounting bracket 6, and wafer-supporting platform 502 is installed on multiaxis displacement platform 501, and substrate 503 is installed on and holds piece
On platform 501；
The wafer-supporting platform module 5, for adsorbing, moves substrate 503, adjusts the depth of parallelism between mask and substrate and is adjacent to journey
Degree；
The wafer-supporting platform 502, comprising pedestal 5021 and porous ceramics 5022, porous ceramics is distributed in inside and outside two regions,
And it is furnished with mutually independent gas circuit, it is possible to achieve subregion adsorbs and blows；When blowing, interior zone, after-blow outside area are first blown
Domain, can effectively exclude the air between mask and substrate.
The step of being exposed using described device is included：
Step 1：The wafer-supporting platform 502 is moved to loading position, load substrates 503 by the wafer-supporting platform module 5.
Step 2：The wafer-supporting platform 502 is moved to exposure position, substrate 503 is placed in the visual field of inspection flat-die block 2, passed through
The lighting system illumination of flat-die block 2 is examined, is imaged in probe unit, gathers 503 image information of mask plate 404 and substrate, calculated
The depth of parallelism of mask plate 404 and substrate 503, leveling is carried out according to result of calculation to mask plate 404 and substrate 503.
Step 3：The lighting system illumination of the alignment modules 3, is imaged in probe unit, by gathering mask plate 404
The image of " ten " word mark and 503 square of substrate mark, calculates the relative position of mask plate 404 and substrate 503, mobile or rotation
Turn wafer-supporting platform 502, quickly realize coarse alignment；Then the Moire fringe image of mask plate 404 and substrate 503 is gathered, calculating is covered
The relative position of template 404 and substrate 503, it is mobile or rotate the wafer-supporting platform 502, to mask plate 404 and substrate 503 into
Row fine registration.
Step 4：The wafer-supporting platform 502 moves up, and the mask plate 404 and the substrate 503 is slowly contacted, contact
During, acted in the smaller power that is adjacent on the flexible hinge 402, mask plate 404 is passed through geometric center around it
Mutually orthogonal two axis rotation, completes to develop, and avoids producing lateral displacement.
Step 5：The uv-exposure light source 1 produces light beam, is irradiated to mask plate 404, passes through imaging system images to base
On piece 503, exposure is completed.
Step 6：After end exposure, the uv-exposure light source stops producing light beam, and wafer-supporting platform 502 moves down, and makes mask plate
404 and substrate 503 separate.
Step 7：The wafer-supporting platform 502 steps to next exposure position.
Step 8：Step 4, step 5, step 6, step 7 are repeated in, until completing all position exposures.
Step 9：The wafer-supporting platform 502 is moved to unloading position, unloading substrate 503.
Claims (10)
- A kind of 1. super resolution lithography device based on flexible hinge structure, it is characterised in that：Including uv-exposure light source (1), inspection Flat-die block (2), alignment modules (3), flexible hinge projective lens (4), wafer-supporting platform module (5) and supporting rack (6), supporting rack (6) Comprising upper backup pad (7) and lower supporting plate (8), supporting rack (5) is installed on shock insulation platform, and uv-exposure light source (1) is installed on On upper backup pad (7), inspection flat-die block (2) is installed on upper backup pad (7), and alignment modules (3) are installed on upper backup pad (7), Flexible hinge photoetching head is installed on upper backup pad (7), and wafer-supporting platform module (5) is installed on lower supporting plate (8).
- 2. the super resolution lithography device according to claim 1 based on flexible hinge structure, it is characterised in that：It is described ultraviolet Exposure light source (1), for producing uniform exposing light beam, uv-exposure optical source wavelength scope is 365 ± 5nm, light field uniformity More than 95%, light field area is more than 120mm × 120mm, and power density is more than 15mw/cm2, and working distance is more than 200mm, diverging half Angle is less than 3 °.
- 3. the super resolution lithography device according to claim 1 based on flexible hinge structure, it is characterised in that：The inspection is flat Module (2), using non-contact detection method, the parallelism error requirement of detection is less than 1 ', and device will be flat according to inspection as a result, automatic Wafer-supporting platform module (5) is adjusted, realizes the leveling of mask plate (404) and substrate (503).
- 4. the super resolution lithography device according to claim 1 based on flexible hinge structure, it is characterised in that：The alignment Module (3), including displacement platform (301), CCD (302), lens barrel (303), lighting source (304), speculum (305), CCD (302) It is installed on displacement platform (301), lens barrel (303) is installed on CCD (302), and lighting source (304) is installed on lens barrel (303), Speculum (305) is installed on the lens barrel (303), and wherein displacement platform (301) has the free degree of six direction, for positioning Mark and focusing.
- 5. the super resolution lithography device according to claim 1 based on flexible hinge structure, it is characterised in that：The flexibility Hinge projective lens (4), including installing plate (401), flexible hinge (402), mask installing plate (403) and mask plate (404), it is soft Property hinge (402) is installed on installing plate (401), and mask installing plate (403) is installed on flexible hinge (402) lower end, mask plate (404) it is installed on mask installing plate (403).
- 6. the super resolution lithography device based on flexible hinge structure according to claim 1 or 5, it is characterised in that：It is described Flexible hinge projective lens (4), are moved up by wafer-supporting platform module (5), substrate (503) and mask (404) is slowly contacted, and then Developed so that mask (404) rotates completion around it by two mutually orthogonal axis of geometric center, which reduces substrate (503) and in mask (404) contact process the lateral displacement produced.
- 7. the super resolution lithography device according to claim 5 based on flexible hinge structure, it is characterised in that：The flexibility Hinge (402), selected materials have good intensity, more than 980Mpa, hardness 45HRC-50HRC, elasticity and anti-fatigue performance.
- 8. the super resolution lithography device based on flexible hinge structure according to claim 5 or 7, it is characterised in that：It is described In flexible hinge (402), flexible unit includes circle, ellipse, arch etc., and the requirement on machining accuracy of flexible unit is higher than 20 μm.
- 9. the super resolution lithography device according to claim 1 based on flexible hinge structure, it is characterised in that：It is described to hold piece Platform module (5), wafer-supporting platform module include multiaxis displacement platform module (501), wafer-supporting platform (502) and substrate (503), multiaxis displacement platform (501) it is installed on lower mounting bracket (6), wafer-supporting platform (502) is installed on multiaxis displacement platform (501), and substrate (503) is installed on and holds On piece platform (501).
- 10. a kind of super resolution lithography method based on flexible hinge structure, is based on soft using claim 1-9 any one of them The super resolution lithography device of property hinge arrangement, it is characterised in that：It is exposed using the flexible hinge super resolution lithography device The step of include：Step 1：The wafer-supporting platform is moved to loading position, load substrates by the wafer-supporting platform module；Step 2：The wafer-supporting platform module is moved to exposure position, the substrate is placed in the visual field of the inspection flat-die block, led to The lighting system illumination of the inspection flat-die block is crossed, is imaged in probe unit, collection mask and substrate image information, described in calculating The depth of parallelism of mask and the substrate, according to result of calculation, control wafer-supporting platform module carries out leveling to mask and substrate；Step 3：The lighting system illumination of the alignment modules, is imaged in probe unit, by gathering mask " ten " word mark With the image of substrate square mark, the relative position of mask and substrate is calculated, mobile or rotation wafer-supporting platform, is quickly realized thick Alignment；Then the Moire fringe image of the mask and the substrate is gathered, calculates the opposite position of the mask and the substrate Put, move or rotate the wafer-supporting platform, fine registration is carried out to the mask and the substrate；Step 4：The wafer-supporting platform moves up, and mask and substrate is slowly contacted, and in contact process, power is adjacent in smaller Act on flexible hinge, mask is rotated around it by mutually orthogonal two axis of geometric center, complete to develop, avoid producing Raw lateral displacement；Step 5：The uv-exposure light source produces light beam, is irradiated to the mask, passes through the imaging system images to substrate On, complete exposure；Step 6：After end exposure, the uv-exposure light source stops producing light beam, and the wafer-supporting platform moves down, make the mask and The substrate separation；Step 7：The wafer-supporting platform steps to next exposure position；Step 8：Step 4, step 5, step 6, step 7 are repeated in, until completing all position exposures；Step 9：The wafer-supporting platform is moved to unloading position, unloads the substrate.
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| CN111272153A (en) * | 2020-03-03 | 2020-06-12 | 中国科学院光电技术研究所 | Leveling device and method for passive leveling structure |
| CN112558429A (en) * | 2020-12-14 | 2021-03-26 | 中国科学技术大学 | Maskless plasmon direct-writing photoetching system |
| WO2021219017A1 (en) * | 2020-04-29 | 2021-11-04 | 中国科学院光电技术研究所 | Alignment and measurement system and method, and photoetching machine |
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| CN111272153A (en) * | 2020-03-03 | 2020-06-12 | 中国科学院光电技术研究所 | Leveling device and method for passive leveling structure |
| WO2021219017A1 (en) * | 2020-04-29 | 2021-11-04 | 中国科学院光电技术研究所 | Alignment and measurement system and method, and photoetching machine |
| CN112558429A (en) * | 2020-12-14 | 2021-03-26 | 中国科学技术大学 | Maskless plasmon direct-writing photoetching system |
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