CN108021843A - High sensitivity fingerprint sensor based on BCD techniques - Google Patents
High sensitivity fingerprint sensor based on BCD techniques Download PDFInfo
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- CN108021843A CN108021843A CN201610927233.5A CN201610927233A CN108021843A CN 108021843 A CN108021843 A CN 108021843A CN 201610927233 A CN201610927233 A CN 201610927233A CN 108021843 A CN108021843 A CN 108021843A
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- 230000035945 sensitivity Effects 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000004913 activation Effects 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000005086 pumping Methods 0.000 abstract description 12
- 208000035824 paresthesia Diseases 0.000 abstract description 6
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
Abstract
The present invention provides a kind of high sensitivity fingerprint sensor based on BCD techniques, including：Fingerprint collecting unit circuit, high-voltage pulse generation circuit and internal booster circuit.Fingerprint collecting unit circuit, input terminal connection high-voltage pulse signal and digital analog converter, output terminal connection output circuit or rear class receive amplifying circuit；High-voltage pulse generation circuit, output terminal connect the fingerprint collecting unit circuit, are fingerprint collecting unit circuit output high pressure activation signal, for directly or indirectly driving the formation of finger print；Internal booster circuit, output terminal are connected with high-voltage pulse generation circuit, and the low voltage for power supply to be provided is raised to high voltage, and high pressure is inputted to the high-voltage pulse generation circuit.The present invention uses internal booster circuit, and pumping signal of the present invention puts on chip internal by producing inside circuit, therefore while collection finger surface will not be put on cause finger tingling sensation, it can effectively improve the detectivity of sensor.
Description
Technical field
The present invention relates to fingerprint identification technology field, is passed more particularly, to a kind of high sensitivity fingerprint based on BCD techniques
Sensor.
Background technology
Existing major part fingerprint sensor produces a pumping signal using sensor, and one is installed by sensor periphery
A becket and finger to be collected contact the mode of the becket, this pumping signal are applied to finger surface to be collected, with reality
Now the principle of finger electrode is driven to realize fingerprint collecting, as shown in Fig. 1 (a).The existing fingerprint using finger excitation principle passes
In sensor, in order to avoid groups of people are in fingerprint collecting, finger causes tingling sensation, the pulse excitation voltage max one on finger
As be no more than 4V.
In addition, existing operative sensor realizes sensor height using high pressure activation signal driving fingerprint sensor substrate
Pumping signal tingling sensation caused by finger surface, such as patent CN103376970A are penetrated and solve, as shown in Fig. 1 (b).By
The state being excited by signal is in the substrate of sensor, therefore needs to be DC between the digital signal of sensor output and host computer
Isolation processing.So, it is necessary to increase an interface conversion chip between sensor and host computer.Simultaneously as driving sensing
The substrate of device needs larger driving force, so, high-voltage signal is boosted by exterior DCDC chips and produced, and passes through interface conversion
Substrate high-voltage driven signal is formed after chip copped wave.
In becket incentive program, the power consumption of pumping signal generation circuit is larger.When pumping signal level on becket
After 4V, for groups of people during fingerprint collecting, finger surface can experience a degree of shouting pain due to pumping signal
Sense.And the pumping signal less than 4V, the detectivity of the great limiting sensor of meeting.Due to needing peripheral metal ring, chip
Packaging cost and encapsulation complexity it is generally higher.Becket is the larger conductive electrode of an area, can to its exterior or
Person is disturbed by its exterior.Meanwhile the sensor with becket is in an installation, when being bonded with system-level machine casing,
The problem of in the presence of installation inconvenience.In bulk driven scheme, DCDC and high voltage interface chip it is system-level can consume it is higher
Power consumption, increases the cost of system；Meanwhile system forms complicated, inconvenient debugging.
The content of the invention
The object of the present invention is to provide a kind of high sensitivity fingerprint sensor based on BCD techniques, without external metal ring
Excitation, while not using DCDC and high voltage interface chip in applications, improves the collection sensitivity of fingerprint sensor.
To achieve these goals, the high sensitivity fingerprint sensor proposed by the present invention based on BCD techniques, including：Refer to
Line collecting unit circuit, high-voltage pulse generation circuit and internal booster circuit.
The fingerprint collecting unit circuit, input terminal connection high-voltage pulse signal VH and digital analog converter DAC, output terminal connect
Connect output circuit or rear class receives amplifying circuit；The high-voltage pulse generation circuit, output terminal connect the fingerprint collecting unit
Circuit, is fingerprint collecting unit circuit output high pressure activation signal VH, for directly or indirectly driving the formation of finger print.Institute
Internal booster circuit is stated, output terminal is connected with high-voltage pulse generation circuit, and the low voltage for power supply to be provided is raised to higher
Voltage, to high-voltage pulse generation circuit input high pressure Vout '.
Further, the fingerprint collecting unit circuit also includes the first pole plate and the second pole plate, first pole plate,
Fringe field finger capacitance Cf is formed between two pole plates and finger surface.
Further, the fingerprint collecting unit circuit also includes amplifier, reference voltage and feedback capacity；The amplification
Device includes normal phase input end, inverting input and output terminal；The reference voltage Vref is produced by front stage circuits, is input to described
The normal phase input end of amplifier；One end of the feedback capacity Cfb is connected with the inverting input of the amplifier, the feedback
The other end of capacitance is connected with the output terminal of the amplifier；The inverting input of the amplifier is also connected with the second pole plate；
The output terminal of the amplifier exports the output signal Vout of the fingerprint collecting unit circuit.
Further, the digital analog converter DAC, produces suitable analog quantity, is coupled to by DC compensation capacitance Cdc
The inverting input of the amplifier, for adjusting the direct current biasing of circuit.
Further, the amplifier is low-noise amplifier LNA.
Further, the high-voltage pulse generation circuit includes non-overlapping clock generation circuit, dynamic level carry circuit
First, dynamic level carry circuit two, output insulated-gate field-effect crystal N pipes, output insulated-gate field-effect crystal P pipes.
The operation principle of high-voltage pulse generation circuit is：Circuit input signal be low voltage high level V0, low level
For 0V, by non-overlapping clock generation circuit and dynamic level generation circuit one, one group of non-overlapping clock is generated, while by pulse
High level lifting to V1, the control sequential as output N pipes；By dynamic level carry circuit two, by the high level of pulse
V1 liftings are to V2, the control sequential as output P pipes；By controlling the switch of output N pipes and P pipes, output and input signal
The output high pressure Vout " that high level with sequential is V2, low level is 0V.The signal is input to the input of fingerprint collecting unit circuit
End, is high-voltage pulse signal VH.Described V0, V1 are actually needed by circuit and determined, the size of high level V2 is determined by Vout '.
Further, the internal booster circuit is charge pump.
The beneficial effect of this patent：
1. sensor circuit described in this patent, can save the pumping signal and metal of the generation of prior art fingerprint sensor
Ring, avoids finger from directly contacting electric signal.So as to save the power consumption of pumping signal generation circuit；Avoid in fingerprint collecting mistake
Cheng Zhong, pumping signal tingling sensation caused by finger surface；Due to eliminating peripheral metal ring, reduce chip package cost and
The complexity of installation；Improve the antijamming capability of chip.
2. this patent pumping signal puts on chip internal by being produced inside circuit, therefore driving voltage can reach 20V
High pressure above, while will not cause tingling sensation to collection finger, can effectively improve the detectivity of sensor.
3. the implementation of this patent, is ensureing the high sensitivity of original sensor and is not causing the premise of tingling sensation to finger
Under, the exterior DCDC chips and interface conversion chip for generating high pressure can be removed, so as to effectively reduce fingerprint collecting module
Power consumption, saves the volume and cost of module, while system is simplified, improves the reliability of system.
Brief description of the drawings
Fig. 1 (a) uses the fingerprint collecting unit circuit of finger excitation in the prior art；
Fig. 1 (b) fingerprint sensor bulk driven schemes in the prior art；
Fig. 2 is the fingerprint collecting unit circuit based on fringe field finger capacitance and high-voltage pulse of the embodiment of the present invention；
Fig. 3 is the high-voltage pulse generation circuit of the embodiment of the present invention；
Fig. 4 is the charge pump booster circuit of the embodiment of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings come illustrate the present invention it is excellent
Embodiment is selected, this patent is retouched in detail by taking the capacitive fingerprint sensing device formed by capacitance type sensing element arrays as an example
State, wherein, capacitance type sensing element arrays include two and more than two fingerprint collecting units.Fig. 2 is the embodiment of the present invention
The fingerprint collecting unit circuit based on fringe field finger capacitance and high-voltage pulse.Fig. 3 is the high-tension pulse of the embodiment of the present invention
Rush generation circuit.Fig. 4 is the charge pump booster circuit of the embodiment of the present invention.
High sensitivity fingerprint sensor proposed by the present invention based on BCD techniques, including：Fingerprint collecting unit circuit 100,
High-voltage pulse generation circuit 200 and internal booster circuit.
Fingerprint collecting unit circuit 100, input terminal connection high-voltage pulse signal VH and digital analog converter 101, output terminal connect
Connect output circuit or rear class receives amplifying circuit 102；High-voltage pulse generation circuit 200, output terminal connection fingerprint collecting unit electricity
Road 100, exports high-voltage pulse signal VH, for directly or indirectly driving the shape of finger print for fingerprint collecting unit circuit 100
Into.Internal booster circuit, output terminal are connected with high-voltage pulse generation circuit 200, and the low voltage for power supply to be provided is raised to
High voltage, high pressure Vout ' is inputted to high-voltage pulse generation circuit 200.
Fingerprint collecting unit circuit 100 is also comprising the first pole plate 103, the second pole plate 104, amplifier 105, reference voltage
Vref and feedback capacity Cfb.
Wherein, high-voltage pulse signal VH includes but not limited to 16V, 20V, below by taking high-voltage value 20V as an example.
Wherein, fringe field finger capacitance Cf is formed between the first pole plate 103, the second pole plate 104 and finger surface 106；
First pole plate 103 and the top-level metallic that the second pole plate 104 is chip, chip surface dielectric layer material include but not limited to chip list
The common vehicle materials such as face passivation layer, PI, molding material, coating materials or ceramic cover plate.
Amplifier 105 includes normal phase input end, inverting input and output terminal；Reference voltage Vref is produced by front stage circuits
It is raw, it is input to the normal phase input end of amplifier 105；One end of the feedback capacity Cfb and the inverting input phase of amplifier 105
Even, the other end of the feedback capacity Cfb is connected with the output terminal of amplifier 105, feedback capacity Cfb by the second pole plate 104 and
The parasitic capacitance of lower metal is formed, and capacitance size is in the 10fF orders of magnitude；The inverting input of amplifier 105 also with the second pole
Plate 104 is connected；The output signal Vout of the output terminal output fingerprint collecting unit circuit 100 of amplifier 105.Put in the present embodiment
Big device 105 is low-noise amplifier LNA.
DAC is digital analog converter 101 in Fig. 2, produces suitable analog quantity, is coupled to by DC compensation capacitance Cdc and put
The inverting input of big device 105, for adjusting the direct current biasing of circuit.DC compensation capacitance Cdc is by the second pole plate 4 and lower floor
The parasitic capacitance of metal is formed, and capacitance size is in the 1fF orders of magnitude.
The output circuit or rear class that Output Circuit circuits are LNA in Fig. 2 receive amplifying circuit 105.In the fingerprint
In collecting unit circuit, using the first pole plate 103 of high-voltage pulse driving finger capacitance, pass through amplifier 105 and feedback capacity
Cfb, element circuit output terminal is mirrored to by high-voltage pulse signal VH and fringe field finger capacitance Cf.
Fig. 3 is the high-voltage pulse generation circuit of the embodiment of the present invention.High-voltage pulse generation circuit 200 includes non-overlapping clock
Generation circuit 201, dynamic level carry circuit 1, dynamic level carry circuit 2 203, output insulated-gate field-effect crystal N
Pipe 204, output insulated-gate field-effect crystal P pipes 205.Change Pump circuits are charge pump circuit 206 in Fig. 3.
Assuming that the input signal of circuit is high level 1.8V, the pulse signal of low level 0V, is produced by non-overlapping clock
Circuit 201 and dynamic level generation circuit 1, generate one group of non-overlapping clock, while the high level of pulse is lifted to phase
To high voltage, such as 3V, in this, as the control sequential of output N pipes 204.By the use of the pulse signal that high level is 3V as defeated
Enter signal, by the dynamic level carry circuit 2 203 of 3V to 20V, obtain the pulse signal that high level is 20V, in this, as
Export the control sequential of P pipes 205.By controlling the switch of output N pipes 204 and P pipes 205, realize with input signal at the same time
The high level of sequence is 20V high pressures, and low level is the output signal of 0V.The signal is input to fingerprint collecting unit circuit 100 and inputs
End, is high-voltage pulse signal VH.
In the present embodiment, internal booster circuit is charge pump.Fig. 4 is the charge pump booster circuit of the embodiment of the present invention.Adopt
Charge pump capacitor with the non-overlapping clock of two-phase and step by step, after n+1 clock cycle (n is capacitance number), circuit can be with
The low voltage that power supply is provided is raised to high voltage Vout ', such as 1.8V input voltages are increased to 20V outputs.The high pressure
Vout ' is input to high-voltage pulse generation circuit 200, the high-pressure section power supply as high-voltage pulse generation circuit.
This patent uses BCD techniques, and on piece is produced by internal booster circuit integration realization high pressure, then passes through high-voltage pulse
Generation circuit 200, produces a high-voltage pulse.A fringe field capacitance can be formed between two pole plates in array element
Cf.Finger surface is nearer from pole plate, and the field effect between two pole plates is weaker, and Cf is smaller, on the contrary then anti-.Using the high-voltage pulse
The first pole plate of finger capacitance is driven, by amplifier 105 and Cfb feedback capacities, high-voltage pulse signal and Cf are mirrored to list
First circuit output end, element circuit output voltage Vout, according to principle of charge conservation,
Wherein, Vout is the output signal of the fingerprint collecting unit circuit, and VH is the high-voltage pulse signal, and Cf is side
Edge electric field finger capacitance, Cfb are feedback capacity.
Know that element circuit output voltage Vout and Cf is positively correlated from formula (1), illustrate the corresponding Vout of fingerprint ridge
Small, the corresponding Vout of fingerprint valley is big.After obtaining the Vout of circuit output, changed by the amplification of late-class circuit and ADC, circuit
Finger print information may finally be converted into fixed bit digital output.
The detailed description and the accompanying drawings of the embodiment of the present invention are only intended to the explanation present invention, rather than limitation by claim and
The scope of the present invention that its equivalent defines.
Claims (10)
- A kind of 1. high sensitivity fingerprint sensor based on BCD techniques, it is characterised in that including：Fingerprint collecting unit circuit, height Press pulse-generating circuit and internal booster circuit；The fingerprint collecting unit circuit, input terminal connection high-voltage pulse signal VH and digital analog converter DAC, output terminal connection are defeated Go out circuit or rear class receives amplifying circuit；The high-voltage pulse generation circuit, output terminal connect the fingerprint collecting unit circuit, are that fingerprint collecting unit circuit is defeated Go out high pressure activation signal VH, for directly or indirectly driving the formation of finger print；The internal booster circuit, output terminal is connected with high-voltage pulse generation circuit, for the low voltage liter for providing power supply To high voltage, to high-voltage pulse generation circuit input high pressure Vout '.
- 2. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 1, it is characterised in that the fingerprint is adopted Collection element circuit also includes the first pole plate and the second pole plate, and side is formed between first pole plate, the second pole plate and finger surface Edge electric field finger capacitance Cf.
- 3. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 2, it is characterised in that first pole Plate and the top-level metallic that the second pole plate is chip；Chip surface dielectric layer is made of common vehicle material.
- 4. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 2, it is characterised in that the fingerprint is adopted Collection element circuit also includes amplifier, reference voltage and feedback capacity；The amplifier includes normal phase input end, inverting input and output terminal；The reference voltage Vref is produced by front stage circuits, is input to the normal phase input end of the amplifier；One end of the feedback capacity Cfb is connected with the inverting input of the amplifier, the other end of the feedback capacity with The output terminal of the amplifier is connected；The feedback capacity Cfb, is made of the parasitic capacitance of the second pole plate and lower metal.
- 5. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 4, it is characterised in that the digital-to-analogue turns Parallel operation DAC, produces suitable analog quantity, and the inverting input of the amplifier is coupled to by DC compensation capacitance Cdc, is used for Adjust the direct current biasing of circuit；The DC compensation capacitance Cdc, is made of the parasitic capacitance of the second pole plate and lower metal.
- 6. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 4, it is characterised in that the amplifier Inverting input be also connected with the second pole plate.
- 7. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 4, it is characterised in that the amplifier Output terminal export the output signal Vout of the fingerprint collecting unit circuit, output signal is：<mrow> <mi>V</mi> <mi>o</mi> <mi>u</mi> <mi>t</mi> <mo>=</mo> <mi>V</mi> <mi>H</mi> <mo>&times;</mo> <mfrac> <mrow> <mi>C</mi> <mi>f</mi> </mrow> <mrow> <mi>C</mi> <mi>f</mi> <mi>b</mi> </mrow> </mfrac> </mrow>Wherein, Vout is the output signal of the fingerprint collecting unit circuit, and VH is the high-voltage pulse signal, and Cf is edge electricity Field finger capacitance, Cfb is feedback capacity.
- 8. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 4, it is characterised in that the amplifier For low-noise amplifier LNA.
- 9. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 1, it is characterised in that the high-tension pulse Rushing generation circuit includes non-overlapping clock generation circuit, dynamic level carry circuit one, dynamic level carry circuit two, output absolutely Edge gate field-effect crystal N pipes, output insulated-gate field-effect crystal P pipes；The operation principle of high-voltage pulse generation circuit is：Circuit input signal is high level V0, the low level 0V of low voltage, By non-overlapping clock generation circuit and dynamic level generation circuit one, one group of non-overlapping clock is generated, while by the height of pulse Level boost is to V1, the control sequential as output N pipes；By dynamic level carry circuit two, the high level V1 of pulse is carried V2 is raised to, the control sequential as output P pipes；By controlling the switch of output N pipes and P pipes, output and input signal are at the same time The output high pressure Vout " that the high level of sequence is V2, low level is 0V；Described V0, V1 are actually needed by circuit and determined, high level V2 Size by Vout ' determine.
- 10. the high sensitivity fingerprint sensor based on BCD techniques as claimed in claim 1, it is characterised in that the internal liter Volt circuit is charge pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610927233.5A CN108021843A (en) | 2016-10-31 | 2016-10-31 | High sensitivity fingerprint sensor based on BCD techniques |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610927233.5A CN108021843A (en) | 2016-10-31 | 2016-10-31 | High sensitivity fingerprint sensor based on BCD techniques |
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| CN108021843A true CN108021843A (en) | 2018-05-11 |
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| CN201610927233.5A Pending CN108021843A (en) | 2016-10-31 | 2016-10-31 | High sensitivity fingerprint sensor based on BCD techniques |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111353406A (en) * | 2020-02-24 | 2020-06-30 | 成都世纪天知科技有限公司 | Fingerprint sensor acquisition unit without excitation signal and BOOST chip |
| WO2020232632A1 (en) * | 2019-05-21 | 2020-11-26 | Boe Technology Group Co., Ltd. | A sensor circuit for generating and detecting ultrasonic sensing signal, an ultrasonic sensing display apparatus |
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