CN1080177C - Tray for holding IC chip and making method thereof - Google Patents
Tray for holding IC chip and making method thereof Download PDFInfo
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- CN1080177C CN1080177C CN98119354A CN98119354A CN1080177C CN 1080177 C CN1080177 C CN 1080177C CN 98119354 A CN98119354 A CN 98119354A CN 98119354 A CN98119354 A CN 98119354A CN 1080177 C CN1080177 C CN 1080177C
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Abstract
The present invention relates to a method for making a bearing disk of an integrated circuit wafer, which comprises the steps that melting plastics are shot into a mould hole of a bearing disk; a pressure value is preset; gas is pressurized to the pressure value which is preset; the state of the melting plastics is predicted; the gas is shot into the mould hole; the gas is discharged until the pressure value of the gas achieves next pressure value, the gas and the mould hole form a passage, and the pressure of the gas is kept; the gas is discharged until the pressure of the gas achieves atmospheric pressure. The bearing disk of an integrated circuit wafer comprises a closed outer frame, ribs which are arranged in the closed outer frame at intervals, and a first closed gas passage which is arranged along the long direction of the ribs. At least two containing zones are bounded by the closed outer frame and the ribs. Supporting wafers and supporting plates are arranged along the lower sides of the containing zones.
Description
The present invention relates to a kind of electronic integrated circuit chip-bearing disc and manufacture method thereof, particularly a kind of integrated circuit (IC) chip-bearing disc made from the gas auxiliary jet formation technology, and utilize the gas auxiliary jet formation technology to make the method for tray for holding IC chip.
Traditional tray for holding IC chip (IC Tray) utilizes traditional injection forming method, design the multiple spot needle-like gate, with the hot runner that designs the molten plastics are injected in the die cavity again and be shaped, but because of tray for holding IC chip itself thinner, so utilize traditional injection molding method to make in the process of carrier, easily cause molten plastic flows not good, it is bad to cause the plastics weak point to be penetrated, not only influence outward appearance, also influence its structural strength; Moreover, because the whole section thickness of chip-bearing disc is very inhomogeneous, so emitted finished product is easy to warpage and distortion; Therefore, made product must need in advance through hot worked after-treatment, to remedy or to correct the distortion of generation, to obtain comparatively complete final products if desire commercialization.
By overcoming the inconvenience that this traditional ejection forming technique is brought, introduced a kind of injection compression molding method (Injection Compression Moulding) afterwards, utilize the extrusion action of closing molding, reach the default final thickness of mould with the extension plastics, improve the shortcoming that the conventional art weak point is penetrated (shortshot).But this technology is at mould initial stage during die sinking position, open cast gate according to the predefined signal of institute, after ejaculation reaches the plastics of mould capacity 100～300%, closing molding, the compression plastics make and are uniformly distributed in the die cavity, so the unnecessary plastics of extruding must be discharged through discharging die cavity, not only waste plastics, discharge die cavity and overflow the great number cost that plastics recovery mechanism is produced because of adding again; Moreover, the controlling organization of this pass mould is very complicated, so the extrusion mechanism controls of dealing with behind the many IC chip-bearing disc pass moulds of varied in thickness is extremely difficult, the finished product that produces is out easily given birth to sluggish vestige (Hesitation Mark), equally, the still essential back heating process of implementing is in the hope of improving.
For asking perfect, further technique improvement continues again, it attempts aforementioned injection compression molding method is added the air injection process, promptly be under the half-open position plastics are injected in the die cavity, mould is closed to first close the mould state, flow to far-end with extruding plastic at mould, again moment crack mould, and low-pressure nitrogen squeezed in the die cavity, last, again mould is closed to second and close the mould state and be shaped.The low-pressure gas that this kind ejection forming technique is imported, must cooperate multistage and complicated control, mould opening for example, the time that Guan Mo begins with extruding plastic, speed and pressure, for the second time crack amount control of mould and second section pass mould time, speed and pressure etc., cause the optional scope of running parameter (window) very narrow and small, so the qualification rate of product is extremely low.
Therefore, an IC chip-bearing disc product, need especially to carry the IC wafer through the drying of very high temperature and the carrier of checkout equipment, if need have high structural strength concurrently, warp resistance, in light weight and the attractive in appearance and profile of warpage not is on the development and Design of modern product, must be subject to the expensive program of back processing, otherwise almost can't finish.
Main purpose of the present invention, be to provide a kind of method of making tray for holding IC chip with gas auxiliary jet formation, utilize and wherein molten plastic is injected in the die cavity with symmetric position, and situation about in die cavity, flowing with for example computer aided engineering (CAE) prediction and analyzing plastics, at last, the nitrogen of preset pressure value injected die cavity with the position of symmetry and carry out simple and easy implementation step such as pressurize, can obtain a surface aesthetic (not can systolic depression), size is accurate, and outward appearance does not have the product of any defective.
Secondary objective of the present invention, be to provide a kind of tray for holding IC chip made from the gas auxiliary jet formation technology, the air flue cause that utilize wherein vertically, transverse ribs and/or outside framework comprises is just like the function of reinforced ribs, can prevent that the IC chip-bearing disc from producing any depression, warpage and distortion, the warp resistance structural strength of product is improved greatly, require heat drying in very high semiconductor integrated circuit (IC) equipment for carrying IC wafer by precision and heat resistance, process such as checkout and encapsulation, without a doubt.
Another purpose of the present invention, be to provide a kind of electronic integrated circuit (IC) chip-bearing disc made from the gas auxiliary jet formation technology, utilize the design of air flue in its center rib, make the rib of IC chip-bearing disc form " hollow " shape, to alleviate overall weight; And can therefore reduce and penetrate pressure, clamp force and shorten the production cycle.
For achieving the above object, the present invention takes following scheme:
The manufacture method of tray for holding IC chip of the present invention comprises the following steps:
(1) inject molten plastic in the die cavity of chip-bearing disc with symmetric position;
(2) default at least two sections pressure values;
(3), and control its volume with the preset pressure value of a kind of gas boosting to one of them;
(4) predict or analyze the distribution situation of molten plastic in this die cavity;
(5) with the gas of preset pressure value with symmetric position, inject in the die cavity of filling plastics, stop through certain hour;
(6) gas of this tool preset pressure value is disposed to the force value of adjusting in advance next time, will has the gas of force value next time and described die cavity again and be linked to be and be to stop path, through certain hour to carry out pressurize;
(7) emission gases is until identical with atmospheric pressure and stop;
(8) open mould, form the IC chip-bearing disc.
Tray for holding IC chip of the present invention comprises: the rib of the outside framework of a sealing and connection outside framework, and rib is spaced from each other and is and is located in the outside framework crisscrossly; At least two disposal areas are defined with being staggered rib mutually by outside framework, which is provided with the sprue gate;
Along the rib length direction, be formed with first air flue that is closed in it;
Also be provided with the gas entry portal, the gas entry portal is located on the outside framework symmetrically;
The sprue gate is located on part longitudinal rib and the parts transversely rib symmetrically with respect to carrier;
Along the periphery below of each disposal area, inwardly be provided with in order to gripper shoe ccontaining and the support wafer.
Reaching embodiment in conjunction with the accompanying drawings is described as follows characteristics of the present invention:
The accompanying drawing simple declaration
Fig. 1: the plane of the tray for holding IC chip of most preferred embodiment of the present invention;
Fig. 2: the generalized section of being got along the 2-2 hatching among Fig. 1.
Fig. 3: A-D is the melten gel view in the carrier die cavity of the present invention.
Method with gas auxiliary jet formation technology manufacturing tray for holding IC chip of the present invention may further comprise the steps (Fig. 1 is consulted in cooperation):
(1) with molten plastic with respect to the symmetric position of an IC chip-bearing disc 1 (as Fig. 1 11,12,13,14,15,16,17 and 18) inject and reach about 1-3 second in the die cavity, this molten plastic can be the PPE resin that adds a large amount of conductive carbon blacks and fiber (Carbon Black and CarbonFiber), other suitable plastics such as A-B-A ' type block copolymer or olefin-based graft copolymers;
(2) set out several sections pressure values in advance with for example logic chemical control system circuit (PLC), in present embodiment, set out earlier two sections pressure values of 100～200 kg/cm and 30-80 kg/cm in advance;
(3) a kind of gas (best gas is nitrogen) is pressurized to the suitable pressure value of one between 100～200 kg/cm, and controls the volume of this nitrogen;
(4) predict or analyze molten plastic formed various parameter distribution in die cavity, this prediction and an analytical work can be finished by computer aided engineering (CAE); As shown in Figure 3, promptly with among the present invention IC chip-bearing disc 3A shown in Figure 1 the part-structure in the first quartile of being got (upper right side) carry out cae analysis, wherein to be plastics inject in the die cavity plastics wavefront to the variation diagram of time by position 11 and 12 to Fig. 3 A; Fig. 3 B and Fig. 3 C are respectively the distribution map that plastics penetrate back 1.18 seconds pressure and temperature, and Fig. 3 D then is that plastics penetrate the back situation that nitrogen is emptied in the time of the 8.237th second in being full of plastic body; By as above analyzing, can know the situation that plastics flow in die cavity, and dope the injection phase and the time of nitrogen, and the gas that sets before confirming whether inject pressure suitable;
(5) with the nitrogen of pressure value default in the step (3), conclusion with reference to aforementioned analysis, with symmetric position 21 as shown in Figure 1,22,23,24 inject in the die cavity of filling plastics and stopped through about 25～45 seconds, the opportunity of injecting of wherein said nitrogen, in the time of can in molten plastic is injected die cavity, reaching 70%～90% amount, also can be when molten plastic be injected in the die cavity just fully, also can after injecting in the die cavity fully, molten plastic postpone after 0.5～3 second in addition, again nitrogen is injected (as shown in Fig. 3 B-3D, be plastics inject just fully promptly carry out the example that nitrogen is injected in the die cavity) reach about 25～45 seconds and stop;
(6) nitrogen pressure with the 100-200 kg/cm is disposed to the force value of predefined 30～80 kg/cm in step (2), and becomes path to reach about 5～15 seconds with die cavity and stop, to carry out second section pressure maintaining period of nitrogen in the die cavity;
(7) discharging nitrogen is until with till atmospheric pressure is identical;
(8) open mould, with the IC chip-bearing disc that obtains to be shaped.
According to above-mentioned steps or similarly be equal to alternative step, the tray for holding IC chip 1 of manufacturing can be consulted Fig. 1 and 2, and it comprises the outside framework 30 of a sealing, several longitudinal ribs 40, several transverse ribs 50 and several disposal areas 60.This IC chip-bearing disc 1 is the position, sprue gate 11,13,16,17 of being located at longitudinal rib 4 and transverse ribs 50 confluces by four, and four positions of being located on the longitudinal rib 40, sprue gate 12,14,15,18 are injected molten plastics and are full of die cavity and finish.The outside framework 30 of sealing is roughly rectangular, and longitudinal rib 40 and transverse ribs 50 all are equidistant and are spaced from each other, and each longitudinal rib 40 and transverse ribs 50 are mutually and are located at alternately in the outside framework 50; And each disposal area 60, then the outside framework 30 by sealing defines with 40,50 on each crisscross rib, and become rectangle wafer disposal area, in addition below the periphery of each disposal area 60, inwardly be provided with a gripper shoe,, in disposal area 60, extend from each rib 40,50 lower zone, have the annular lip 61 of rectangular profile with formation, 61 of each annular lip define an impenetrating mouth 62.Utilize annular lip 61, the support of IC wafer can be dropped out outside impenetrating mouth 62 thereon and not.Outside framework 30 and each rib 40,50, it is roughly contour that preferred design becomes, and each annular lip 61 and rib 40,50, then form a difference in height, make when the IC wafer is inserted in the disposal area 60, the upper surface of IC wafer just can not protrude from outside framework 30 and the rib 40,50, and the unlikely IC wafer is caused oppressed injury so that the IC chip-bearing disc of another group same size and section can pile up thereon.Moreover, the size of this disposal area 60, preferably roughly identical with the ccontaining IC wafer of desire, the IC wafer just can be contained in the disposal area 60, and can in disposal area 60, not produce unfixed slippage because of the mobile wafer that causes of carrier.
Consult Fig. 2, the material thickness preferred design of outside framework 30, longitudinal rib 40 and transverse ribs 50 becomes more than 3 millimeters, so that it is held formed first air flue 41 of nitrogen and second air flue 31 that injects from the gas entry portal of being located on the outside framework 30 21,22,23,24 along its length to small part.Wherein first air flue 41 is closed in the rib 40,50, but from the formed passage of gas entry portal 21,22,23,24 nitrogen injections may not be fully conducting mutually; Second air flue 31 is closed in the outside framework 30, and also may not conducting fully mutually from the formed passage of gas entry portal 21,22,23,24 nitrogen injections.
Occupy most of rib 40,50 and outside framework 30 equably by first air flue 41 and second air flue 31 as far as possible, will make the integral product of IC chip-bearing disc reach warp resistance intensity preferably.
Preamble is the narration at preferred embodiment of the present invention, for being familiar with this operator, can under the situation that does not break away from technical scheme of the present invention, do various variations and modification, the shape that for example changes disposal area 60 is held the IC wafer of different size with cooperation, in response to different demands the sprue gate and the gas entry portal of diverse location are set, or change section configuration of carrier 30 etc. arbitrarily.But these change and modification all should be included within protection scope of the present invention.
Claims (12)
1, a kind of manufacture method of tray for holding IC chip is characterized in that, comprises the following steps:
(1) inject molten plastic in the die cavity of chip-bearing disc with symmetric position;
(2) default at least two sections pressure values;
(3), and control its volume with the preset pressure value of a kind of gas boosting to one of them;
(4) predict or analyze the distribution situation of molten plastic in this die cavity;
(5) with the gas of preset pressure value with symmetric position, inject in the die cavity of filling plastics, stop through certain hour;
(6) gas with this tool preset pressure value is disposed to the force value next time that oneself adjusts in advance, will have the gas of force value next time and described die cavity again and be linked to be and be to stop path, to carry out pressurize through certain hour;
(7) emission gases is until identical with atmospheric pressure and stop;
(8) open mould, form the IC chip-bearing disc.
2, the manufacture method of tray for holding IC chip according to claim 1 is characterized in that, described gas is nitrogen.
3, the manufacture method of tray for holding IC chip according to claim 2 is characterized in that, when described molten plastic is not injected in the die cavity fully, promptly carries out described step (5).
4, the manufacture method of tray for holding IC chip according to claim 2 is characterized in that, when described molten plastic is injected in the die cavity fully, promptly carries out described step (5).
5, the manufacture method of tray for holding IC chip according to claim 2 is characterized in that, a period of time after described molten plastic is injected die cavity fully, carries out described step (5) again.
6, the manufacture method of tray for holding IC chip according to claim 5, it is characterized in that, after described molten plastic is injected die cavity fully, after 0.5 to 3 second, promptly gas is injected in the die cavity, experienced 25 to 45 seconds and stop with the pressure of 100 to 200 kg/cm; Then, again this gas is disposed to the pressure next time of 30 to 80 kg/cm, so that die cavity carries out pressurize.
7, the manufacture method of tray for holding IC chip according to claim 2 is characterized in that, described step (4) is to analyze and predict with computer aided engineering, injects the appropriate time and the position of die cavity with decision gas.
8, the manufacture method of tray for holding IC chip according to claim 1 is characterized in that, described step (6) can repeat according to required pressure and number of times.
9, a kind of tray for holding IC chip that utilizes each method manufacturing in the claim 1～8 comprises: the rib of the outside framework of a sealing and connection outside framework, and rib is spaced from each other and is and is located in the outside framework crisscrossly; At least two disposal areas are defined with being staggered rib mutually by outside framework, which is provided with the sprue gate;
It is characterized in that:
Along the rib length direction, be formed with first air flue that is closed in it;
Also be provided with the gas entry portal, the gas entry portal is located on the outside framework symmetrically;
The sprue gate is located on part longitudinal rib and the parts transversely rib symmetrically with respect to carrier;
Along the periphery below of each disposal area, inwardly be provided with in order to gripper shoe ccontaining and the support wafer.
10, chip-bearing disc according to claim 9 is characterized in that, described partially enclosed outside framework is formed with second air flue that is closed in it along its length direction.
11, chip-bearing disc according to claim 9 is characterized in that, the material thickness of described outside framework is at least 3 millimeters.
According to claim 9 or 10 or 11 described chip-bearing discs, it is characterized in that 12, described gripper shoe is from described rib lower zone, the annular lip of in described disposal area, extending, each annular lip defines an impenetrating mouth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98119354A CN1080177C (en) | 1998-09-21 | 1998-09-21 | Tray for holding IC chip and making method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98119354A CN1080177C (en) | 1998-09-21 | 1998-09-21 | Tray for holding IC chip and making method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1248512A CN1248512A (en) | 2000-03-29 |
| CN1080177C true CN1080177C (en) | 2002-03-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98119354A Expired - Fee Related CN1080177C (en) | 1998-09-21 | 1998-09-21 | Tray for holding IC chip and making method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN1080177C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100490860C (en) * | 2006-01-25 | 2009-05-27 | 余内逊 | Preparation method of liver-benefiting face-beautifying oral liquid with micron pine pollen and pearl powder for women |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050077205A1 (en) * | 2003-10-08 | 2005-04-14 | Pylant James D. | Tray with flat bottom reference surface |
| US20050077206A1 (en) * | 2003-10-08 | 2005-04-14 | Pylant James D. | Bare die tray with flat datum surface |
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| JPS5050456A (en) * | 1973-09-04 | 1975-05-06 | ||
| JPS5326594A (en) * | 1976-08-24 | 1978-03-11 | Mitsubishi Electric Corp | Radiation generator |
| CN1121645A (en) * | 1994-07-15 | 1996-05-01 | 氟器皿有限公司 | Wafer carrier |
| CN1128233A (en) * | 1994-07-15 | 1996-08-07 | 氟器皿有限公司 | Wafer shipper and package |
| CN1171076A (en) * | 1994-12-23 | 1998-01-21 | 阿莫科公司 | Improved process for making preforms useful for encapsulating semiconductors |
| CN1200978A (en) * | 1997-06-03 | 1998-12-09 | 财团法人工业技术研究院 | Injection-moulded gas control equipment and moulding method therefor |
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1998
- 1998-09-21 CN CN98119354A patent/CN1080177C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5050456A (en) * | 1973-09-04 | 1975-05-06 | ||
| JPS5326594A (en) * | 1976-08-24 | 1978-03-11 | Mitsubishi Electric Corp | Radiation generator |
| CN1121645A (en) * | 1994-07-15 | 1996-05-01 | 氟器皿有限公司 | Wafer carrier |
| CN1128233A (en) * | 1994-07-15 | 1996-08-07 | 氟器皿有限公司 | Wafer shipper and package |
| CN1171076A (en) * | 1994-12-23 | 1998-01-21 | 阿莫科公司 | Improved process for making preforms useful for encapsulating semiconductors |
| CN1200978A (en) * | 1997-06-03 | 1998-12-09 | 财团法人工业技术研究院 | Injection-moulded gas control equipment and moulding method therefor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100490860C (en) * | 2006-01-25 | 2009-05-27 | 余内逊 | Preparation method of liver-benefiting face-beautifying oral liquid with micron pine pollen and pearl powder for women |
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| Publication number | Publication date |
|---|---|
| CN1248512A (en) | 2000-03-29 |
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