CN108011286B - Device for generating sub-kHz low-frequency intensity difference compression based on cesium atom ensemble - Google Patents
Device for generating sub-kHz low-frequency intensity difference compression based on cesium atom ensemble Download PDFInfo
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- CN108011286B CN108011286B CN201711192798.4A CN201711192798A CN108011286B CN 108011286 B CN108011286 B CN 108011286B CN 201711192798 A CN201711192798 A CN 201711192798A CN 108011286 B CN108011286 B CN 108011286B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
Abstract
The invention relates to a device for generating sub-kHz low-frequency intensity difference compression based on cesium atom ensemble. The invention mainly solves the technical problems of high price and large volume of the existing low-frequency compression state device. The technical scheme adopted by the invention is as follows: a device for generating sub-kHz low-frequency intensity difference compression based on cesium atom ensemble comprises a semiconductor laser, a single-mode fiber, a reflector, an optical beam splitter, an electro-optic modulator, a Fabry-Perot etalon group, a lens group, a half-wave plate, a Glan laser prism, a cesium atom pool, a Glan Thomson prism, a light beam collector, a high-frequency signal generator, a photoelectric detector, a subtracter and a spectrum analyzer. The semiconductor laser is placed on the surface of an independent and heat-insulation platform, and a heat-insulation cover is covered to isolate the semiconductor laser and the platform from the external environment. The invention can obtain the intensity difference compression with the maximum compression degree of-6 dB and the low frequency of 1kHz, and the device has stable performance and compact structure and can realize commercial production.
Description
Technical Field
The invention relates to a device for generating sub-kHz low-frequency intensity difference compression based on cesium atom ensemble, belonging to the technical field of quantum imaging and quantum precision measurement.
Background
The compressed state light field as a non-classical light field has wide application in the fields of quantum precision measurement, quantum imaging and the like. There are various methods for generating the compressed optical field, including an optical parametric oscillator using a built-in nonlinear crystal, a four-wave mixing process in an alkali metal atom ensemble, a kerr effect in an optical fiber, and an intensity-fed laser diode. The frequency of a bimodal compressed optical field generated by a nondegenerate four-wave mixing process in an alkali metal atom corresponds to the transition energy level of the atom, so that the bimodal compressed optical field can be applied to quantum state storage and quantum communication based on an atomic ensemble. On the other hand, the low frequency compression state is also receiving attention due to its application in the field of quantum precision measurement. For example, the use of a low frequency compression state may improve the sensitivity of gravitational wave detection. In 2007, the professor Paul D.Lett of the national institute of standards and technology in the United states used a titanium sapphire laser as the light source to achieve intensity difference compression with a maximum compression of-8.8 dB low frequency to 2.5kHz using four-wave mixing in a rubidium atom ensemble. However, the practical application of the obtained compact light source is limited due to the high price, large volume, high requirements for working environment and the like of the titanium sapphire laser. In contrast, the semiconductor laser has the advantages of low price, small volume, stable working performance, small influence of external environment and the like, so that the semiconductor laser is used as a light source to obtain a compact quantum light source and has important significance. In 2012, the semiconductor laser was used by the teaching group of jingjietai, university of east china, to obtain an intensity difference compression with a maximum compression of-7 dB low frequency to 8kHz in a rubidium atom ensemble.
At present, most of research is focused on a non-degenerate four-wave mixing process in a rubidium atom ensemble, reports of generating a compressed-state light field by using the non-degenerate four-wave mixing process in a cesium atom ensemble are few, and only a zhangjun professor group of shanxi university in 2014 obtains-2.5 dB intensity difference compression by using a titanium sapphire laser as a light source, but the low-frequency compression characteristic of the titanium sapphire laser is not researched. Compared with rubidium atoms, cesium atoms have the following advantages: the cesium atomic clock based on the ground state hyperfine splitting is the current standard of time unit second, and the wavelength corresponding to the D1 line is in the exciton emission frequency region of the indium arsenide quantum dot, so that the development of an atomic and solid coherent interface is facilitated.
Disclosure of Invention
The invention aims to solve the technical problems of high price and large volume of the existing low-frequency compression state device and provides a device for generating sub-kHz low-frequency intensity difference compression based on a cesium atom ensemble.
In order to solve the technical problems, the invention adopts the technical scheme that:
a device for generating sub-kHz low-frequency intensity difference compression based on cesium atom ensemble comprises a semiconductor laser, a single-mode fiber, a first reflector, a second reflector, a third reflector, an optical beam splitter, an electro-optic modulator, a Fabry-Perot etalon group, a first lens group, a second lens group, a first half-wave plate, a second half-wave plate, a Glan laser prism, a cesium atom pool, a Glan Thomson prism, a light beam collector, a first photoelectric detector, a second photoelectric detector, a subtracter and a spectrum analyzer; the semiconductor laser is placed on the surface of an independent and heat-insulating platform, and a heat-insulating cover is covered to isolate the semiconductor laser and the platform from the external environment;
one end of the single mode fiber is connected with the output end of the semiconductor laser, the other end of the single mode fiber is connected with the input end of the first reflector, the semiconductor laser is connected with an experimental platform, and the experimental platform and the semiconductor laser are independently placed;
the first reflector is arranged above the single-mode optical fiber;
the optical beam splitter is arranged on a reflection light path of the first reflector and is positioned between the first reflector and the second reflector;
the electro-optic modulator, the Fabry-Perot etalon group, the first lens group and the third reflector are sequentially arranged on a reflection light path of the optical beam splitter;
the second reflecting mirror is arranged on a transmission light path of the optical beam splitter;
the first half-wave plate, the Glan laser prism and the cesium atom pool are sequentially arranged on a reflection light path of the third reflector;
the second lens group and the second half-wave plate are sequentially arranged on a reflection light path of the second reflecting mirror, and the Glan laser prism is also positioned on the reflection light path of the second reflecting mirror;
the Glan Thomson prism is placed on an emergent light path of the cesium atomic pool;
the light beam collector is arranged on a reflection light path of the Glan Thomson prism;
the first photoelectric detector and the second photoelectric detector are arranged on the transmission light path of the Glan Thomson prism in a crossed mode;
the signal input end of the subtracter is connected with the signal output ends of the first photoelectric detector and the second photoelectric detector to form a balance detection device;
and the signal input end of the spectrum analyzer is connected with the signal output end of the subtracter and used for detecting the output signal of the balance detection device.
Further, the device also comprises a high-frequency signal generator, and a signal output end of the high-frequency signal generator is connected with a signal input end of the electro-optical modulator.
Further, the semiconductor laser is a semiconductor laser with a built-in laser amplifier.
Further, the first lens group and the second lens group are both composed of two identical lenses.
Further, the first photodetector and the second photodetector are two photodetectors with identical parameters.
The invention has the beneficial effects that:
the invention overcomes the limitation of the prior art, uses a semiconductor laser as a light source, utilizes the four-wave mixing process in a cesium atom ensemble to generate an intensity difference compression light source with the maximum compression degree of-6 dB corresponding to a cesium atom D1 line, and compression is observed at a low frequency of below 1 kHz. The device has compact structure, stable system performance and easy operation, and is expected to be used for quantum imaging and the interaction research of non-classical optical fields and cold atoms.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a drawing of the present invention
133A Cs atom double-inverted V structure and a non-degenerate four-wave mixing process;
FIG. 3 is a graph of intensity difference noise power/frequency obtained by the present invention, wherein curve A is normalized standard quantum limit, curve B is intensity difference noise power of probe light and conjugate light, and curve C, D is signal noise power of probe light and conjugate light respectively;
fig. 4 is a graph of intensity difference noise power/frequency at low frequencies obtained by the present invention, where curve a is normalized standard quantum limit and curve B is the intensity difference noise power of probe light and conjugate light.
Detailed Description
The invention is described in further detail below with reference to the figures and examples.
As shown in fig. 1, an apparatus for generating sub-kHz low-frequency intensity difference compression based on cesium atom ensemble in the present embodiment includes a semiconductor laser 1, a single-mode optical fiber 2, a first mirror 31, a second mirror 32, a third mirror 33, an optical beam splitter 4, an electro-optical modulator 5, a fabry-perot etalon group 6, a first lens group 71, a second lens group 72, a first half-wave plate 81, a second half-wave plate 82, a glan laser prism 9, a cesium atom cell 10, a glan thomson prism 11, a beam collector 12, a first photodetector 141, a second photodetector 142, a subtractor 15, and a spectrum analyzer 16; the semiconductor laser 1 is placed on the surface of an independent and heat-insulating platform, and a heat-insulating cover is covered to isolate the semiconductor laser and the platform from the external environment;
one end of the single-mode fiber 2 is connected with the output end of the semiconductor laser 1, the other end of the single-mode fiber 2 is connected with the input end of the first reflector 31, the semiconductor laser 1 is connected with an experimental platform, and the experimental platform and the semiconductor laser 1 are independently arranged;
the first reflector 31 is arranged above the single-mode optical fiber 2;
the optical beam splitter 4 is arranged on the reflection light path of the first reflector 31, and the optical beam splitter 4 is positioned between the first reflector 31 and the second reflector 32;
the electro-optical modulator 5, the fabry-perot etalon group 6, the first lens group 71 and the third reflector 33 are sequentially arranged on a reflection light path of the optical beam splitter 4;
the second reflecting mirror 32 is arranged on the transmission light path of the optical beam splitter 4;
the first half-wave plate 81, the glan laser prism 9 and the cesium atom pool 10 are sequentially arranged on a reflection light path of the third reflecting mirror 33;
the second lens group 72 and the second half-wave plate 82 are sequentially arranged on the reflection light path of the second reflecting mirror 32, and the Glan laser prism 9 is also arranged on the reflection light path of the second reflecting mirror 32;
the Glan Thomson prism 11 is placed on an emergent light path of the cesium atom pool 10;
the beam collector 12 is placed on the reflection light path of the glan thomson prism 11;
a first photodetector 141 and a second photodetector 142 are disposed across the transmission light path of the glan thomson prism 11;
the signal input end of the subtractor 15 is connected with the signal output ends of the first photodetector 141 and the second photodetector 142 to form a balanced detection device;
the signal input of the spectrum analyzer 16 is connected to the signal output of the subtractor 15 for detecting the output signal of the balance detection means.
Further, it comprises a high frequency signal generator 13, a signal output terminal of the high frequency signal generator 13 being connected to a signal input terminal of the electro-optical modulator 5.
Further, the semiconductor laser 1 is a semiconductor laser having a built-in laser amplifier.
Further, the first lens group 71 and the second lens group 72 are each composed of two identical lenses.
Further, the first photodetector 141 and the second photodetector 142 are two photodetectors with identical parameters.
In this embodiment, the semiconductor laser 1 is a semiconductor laser with a built-in laser amplifier, and is placed on an independent, heat-insulating small platform, and is covered with a heat-insulating cover to isolate the semiconductor laser from the external environment, and the light source is coupled and output through the single-mode fiber 2. The semiconductor laser 1 emits a beam of power of 900mW with a frequency corresponding to the power
133Cs atom D1 line (6S)
1/2,F＝3→6P
1/2F' ═ 4, 895nm) blue detuned 1.6GHz laser light passed through a single mode fiber2 are transmitted to the first reflecting mirror 31 and then divided into a horizontal direction light beam and a vertical direction light beam by the optical beam splitter 4.
Wherein the vertical direction light beam generates two side bands of 9.2GHz through the electro-optical modulator 5. A high-frequency signal generator 13 below the semiconductor laser 1 is connected to the radio-frequency input port of the electro-optical modulator 5. The horizontally polarized light carrying the modulation sidebands filters out only the light corresponding to the probe light frequency as probe light via the fabry-perot etalon set 6. The first lens group 71 shapes the probe light spot into a gaussian light beam with a waist spot of 300 μm at the center of the cesium atom pool, the gaussian light beam is reflected by the third reflector 33, and then sequentially passes through the first half-wave plate 81 and the glan laser prism 9 which are arranged behind the third reflector 33, and the first half-wave plate 81 is adjusted so that the intensity of the probe light field penetrating through the glan laser prism 9 is 15 μ W.
Wherein the horizontal direction beam is reflected by the second mirror 32 as pump light. The pump light passes through the second lens group 72 and the second half-wave plate 82 in sequence, the second lens group 72 shapes the pump light spot into a Gaussian beam with a waist spot of 560 microns at the center of the cesium atomic pool, the second half-wave plate 82 is adjusted to adjust the pump light into vertically polarized light, and the vertically polarized pump light is reflected by the Glan laser prism to be 9 and the horizontally polarized probe light to intersect at the center of the cesium atomic pool 10 at an included angle of 6 mrad. The optical field intensity of the vertically polarized pump light is 600 mW.
The probe light and the pump light generate a four-wave mixing process in the cesium atomic pool 10, wherein the optical power of the probe light is amplified to G times, the generated conjugate light power is G-1 times, and the two beams of light are horizontally polarized light when the two beams of light have the same polarization. The four-wave mixing process must satisfy the energy conservation and momentum conservation, so the probe light and the conjugate light are symmetrically distributed on both sides of the pump light.
As shown in FIG. 2, 6S
1/2、6P
1/2Is composed of
133double-inverted-V energy level structure diagram of Cs atom, 6S
1/2F-3, F-4 are two energy levels of ground state hyperfine splitting with an energy level separation of 9.2 GHz. 6P
1/2F ═ 4 is an excited state. Frequency mapping of pump light
133Cs atom D1 line (6S)
1/2,F＝3→6P
1/2F' 4, 895nm) blue detuned 1.6GHz, probe optical frequencyRate correspondence
133Cs atom D1 line (6S)
1/2,F＝4→6P
1/2F' ═ 4, 895nm) blue detuned 1.6 GHz. The probe light and the pump light generate a nondegenerate four-wave mixing process in the cesium atom pool, the power of the probe light is enhanced, and meanwhile, a conjugate light with a frequency difference of 18.4GHz and a power difference of not much is generated on the other side of the pump light.
The Glan Thomson prism 11 is arranged behind the cesium atom pool 10, the extinction ratio of the Glan Thomson prism is 105:1, strong pump light is reflected by the Glan Thomson prism 11, and probe light and conjugate light are transmitted through the Glan Thomson prism 11. The beam collector 12 is disposed below the granthomson prism 11, and collects the vertically polarized pump light reflected by the granthomson prism 11.
The first photodetector 141, the second photodetector 142 and the subtracter 15 together form a balanced detection system based on a compressing device for generating a sub-kHz low-frequency intensity difference in a non-degenerate four-wave mixing process in a cesium atom ensemble. The first photodetector 141 is used to detect the probe light, the second photodetector 142 is used to detect the conjugate light, and the two detector signals enter the subtractor 15 at the same time to detect the intensity difference noise of the two beams. The spectrum analyzer 16 is used to detect the noise power of the intensity difference between the probe light and the conjugate light and the noise power of the two separate beams.
The coherent light beam with the power equal to the sum of the probe light and the conjugate light is divided into two beams of light with the power equal to each other, the two beams of light are respectively injected into the first photodetector 141 and the second photodetector 142, and the two beams of light are connected to the spectrum analyzer 16 through the subtracter 15, so that the obtained noise spectrum is the standard quantum limit.
FIG. 3 shows a noise power spectrum measurement based on the sub-kHz low-frequency intensity difference compression generated by the non-degenerate four-wave mixing process in an ensemble of cesium atoms according to the present invention. Curve a is normalized standard quantum limit, curve B is intensity difference noise power, curve C, D is signal noise power of one single probe light beam and one single conjugate light beam, respectively, and curve C, D can see that the signal noise power of one single probe light beam and one single conjugate light beam are both higher than the standard quantum limit, which indicates that they are thermal optical fields, but the intensity difference signal noise power of probe light and one single conjugate light beam, which is represented by curve B, is lower than the standard quantum limit, that is, the intensity difference compression state is realized by using the device, wherein the maximum compression degree of-6 dB is obtained at 0.06 MHz.
As shown in fig. 4, curve a is the normalized standard quantum limit and curve B is the intensity difference noise power, where at frequencies below 1kHz, the intensity difference noise is still below the normalized standard quantum limit and the degree of compression is-6 dB, i.e. low frequency to sub-kHz intensity difference compression is obtained with the inventive device.
Claims (5)
1. A device for generating sub-kHz low-frequency intensity difference compression based on cesium atom ensemble is characterized in that: the optical fiber grating comprises a semiconductor laser (1), a single-mode optical fiber (2), a first reflector (31), a second reflector (32), a third reflector (33), an optical beam splitter (4), an electro-optic modulator (5), a Fabry-Perot etalon group (6), a first lens group (71), a second lens group (72), a first half-wave plate (81), a second half-wave plate (82), a Glan laser prism (9), a cesium atomic cell (10), a Glan Thomson prism (11), a light beam collector (12), a first photoelectric detector (141), a second photoelectric detector (142), a subtracter (15) and a spectrum analyzer (16); the semiconductor laser (1) is placed on the surface of an independent and heat-insulating platform, and a heat-insulating cover is covered to isolate the semiconductor laser and the platform from the external environment;
one end of the single-mode optical fiber (2) is connected with the output end of the semiconductor laser (1), the other end of the single-mode optical fiber (2) is connected with the input end of a first reflector (31), the semiconductor laser (1) is connected with an experimental platform, and the experimental platform and the semiconductor laser (1) are independently placed;
the first reflector (31) is arranged above the single-mode optical fiber (2);
the optical beam splitter (4) is arranged on a reflection light path of the first reflector (31), and the optical beam splitter (4) is positioned between the first reflector (31) and the second reflector (32);
the electro-optical modulator (5), the Fabry-Perot etalon group (6), the first lens group (71) and the third reflector (33) are sequentially arranged on a reflection light path of the optical beam splitter (4);
the second reflecting mirror (32) is arranged on the transmission light path of the optical beam splitter (4);
the first half wave plate (81), the Glan laser prism (9) and the cesium atom pool (10) are sequentially arranged on a reflection light path of the third reflecting mirror (33);
the second lens group (72) and the second half-wave plate (82) are sequentially arranged on the reflected light path of the second reflecting mirror (32), and the Glan laser prism (9) is also positioned on the reflected light path of the second reflecting mirror (32);
the Glan Thomson prism (11) is placed on an emergent light path of the cesium atom pool (10);
the beam collector (12) is placed on the reflected light path of the granthomson prism (11);
a first photodetector (141) and a second photodetector (142) are crosswise placed on a transmission light path of the Glan Thomson prism (11);
the signal input end of the subtracter (15) is connected with the signal output ends of the first photoelectric detector (141) and the second photoelectric detector (142) to form a balance detection device;
the signal input end of the spectrum analyzer (16) is connected with the signal output end of the subtracter (15) and used for detecting the output signal of the balance detection device.
2. The apparatus of claim 1 for generating sub-kHz low frequency intensity difference compression based on cesium atom ensemble, wherein: the electro-optical modulator also comprises a high-frequency signal generator (13), and a signal output end of the high-frequency signal generator (13) is connected with a signal input end of the electro-optical modulator (5).
3. The apparatus of claim 1 for generating sub-kHz low frequency intensity difference compression based on cesium atom ensemble, wherein: the semiconductor laser (1) is a semiconductor laser with a built-in laser amplifier.
4. The apparatus of claim 1 for generating sub-kHz low frequency intensity difference compression based on cesium atom ensemble, wherein: the first lens group (71) and the second lens group (72) are both composed of two identical lenses.
5. The apparatus of claim 1 for generating sub-kHz low frequency intensity difference compression based on cesium atom ensemble, wherein: the first photodetector (141) and the second photodetector (142) are two photodetectors with identical parameters.
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| CN113126385B (en) * | 2021-04-19 | 2022-05-31 | 山西大学 | Device for generating high-order orbital angular momentum entangled state of two-component continuous variable |
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| CN202434881U (en) * | 2011-12-21 | 2012-09-12 | 华东师范大学 | Quantum light source device for semiconductor laser pumping |
| CN105116663A (en) * | 2015-08-19 | 2015-12-02 | 华东师范大学 | Multi-mode quantum light source realization device based on four-wave mixing process in rubidium vapor |
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| CN202434881U (en) * | 2011-12-21 | 2012-09-12 | 华东师范大学 | Quantum light source device for semiconductor laser pumping |
| CN105116663A (en) * | 2015-08-19 | 2015-12-02 | 华东师范大学 | Multi-mode quantum light source realization device based on four-wave mixing process in rubidium vapor |
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