CN108008192B - Overvoltage protector with piezoresistor fault monitoring function - Google Patents
Overvoltage protector with piezoresistor fault monitoring function Download PDFInfo
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- CN108008192B CN108008192B CN201711222291.9A CN201711222291A CN108008192B CN 108008192 B CN108008192 B CN 108008192B CN 201711222291 A CN201711222291 A CN 201711222291A CN 108008192 B CN108008192 B CN 108008192B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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Abstract
The invention relates to the technical field of overvoltage protectors, in particular to an overvoltage protector with a piezoresistor fault monitoring function, which comprises a single chip microcomputer I, a detection module, a piezoresistor, a pulse signal acquisition module and a voltage sampling module, wherein the temperature acquisition module is connected with the single chip microcomputer I and acquires a temperature signal of the piezoresistor; the pulse signal acquisition module is used for detecting a pulse signal generated by the action of the piezoresistor; the single chip microcomputer I is connected with a single chip microcomputer II for voltage dependent resistor fault signal analysis through a communication module; the voltage sampling module is used for collecting voltage signals of a three-phase line. The overvoltage protector can monitor the aging and damp corrosion conditions of the piezoresistor in real time, avoid equipment accident shutdown caused by damage of the piezoresistor, has high detection accuracy, and can know whether the piezoresistor is damaged in time, thereby improving the use benefit of the overvoltage protector.
Description
Technical Field
The invention relates to the technical field of overvoltage protectors, in particular to an overvoltage protector with a piezoresistor fault monitoring function.
Background
The overvoltage protector is a high-performance overvoltage absorbing device, is suitable for power systems of 35KV and below, is an advanced protector for limiting lightning overvoltage and operating overvoltage, is mainly used for protecting the insulation of electrical equipment such as a generator, a transformer, a switch, a bus, a motor, a parallel compensation capacitor bank and the like from overvoltage damage, and can play an effective protection role for interphase and phase ground overvoltage. The existing overvoltage protector is characterized in that a resistor disc (a voltage dependent resistor) is arranged in an insulating tube, a cavity is arranged between the resistor disc and the insulating tube, air is filled in the cavity, one end of the cavity is connected with a circuit A, B, C, and the other end of the cavity is grounded. The working principle is that a mode of dividing voltage for the resistor by a discharge gap is adopted, the operation impact protection residual voltage of a product is reduced, and the protection of operation overvoltage is realized. Usually, a counter is arranged at the output end of the resistor, and the operating condition of the voltage protector is judged by detecting the discharge frequency of the resistor to judge whether the resistor is good or not. However, the voltage dependent resistor is often damaged when the discharge frequency value is fixed and does not reach the discharge frequency limit value, the detection according to the detection method has the defects of large accuracy fluctuation, poor precision, serious temperature deviation, resistance aging, weak impact resistance, reference voltage reduction, frequent resistance action, easy repeated on-off of voltage, and large difference between the internal temperature and the external temperature, moisture or moisture enters to accelerate the deterioration of the resistance, so that the internal insulation is reduced to cause damage, and the quality of the voltage protector can not be determined by accurately detecting the quality of the resistance through a counter.
Disclosure of Invention
The present invention is directed to an overvoltage protection device with varistor fault monitoring function, so as to solve the above problems in the prior art. The overvoltage protection device with the piezoresistor fault monitoring function has high detection accuracy, and can know whether the piezoresistor is damaged or not in time, so that the use benefit of the overvoltage protection device is improved.
In order to achieve the purpose, the invention provides the following technical scheme:
an overvoltage protector with a piezoresistor fault monitoring function comprises a singlechip I, a detection module, a piezoresistor, a pulse signal acquisition module and a voltage sampling module, wherein one end of the piezoresistor is connected with a three-phase circuit, the other end of the piezoresistor is grounded,
the detection module comprises a temperature acquisition module and a humidity detection module, the temperature acquisition module is connected with the single chip microcomputer I and acquires a temperature signal of the piezoresistor, and the humidity detection module is connected with the single chip microcomputer I and acquires a humidity signal of the piezoresistor;
the pulse signal acquisition module is used for detecting a pulse signal generated by the action of the piezoresistor and sending the acquired pulse signal to the singlechip I;
the single chip microcomputer I is connected with a single chip microcomputer II for voltage dependent resistor fault signal analysis through a communication module;
the voltage sampling module is used for collecting voltage signals of a three-phase line and sending the collected voltage signals to the singlechip II through the communication module.
Preferably, the single chip microcomputer I is connected to the communication module through a GPS time service system and is used for time synchronization with the single chip microcomputer II.
Preferably, the temperature acquisition module acquires the humidity signal of the piezoresistor through the analog quantity acquisition module, and the humidity detection module acquires the humidity signal of the piezoresistor through the analog quantity acquisition module.
Preferably, the communication module adopts a 433m wireless module.
Preferably, the single chip I is electrically connected with a power supply and an alarm.
Preferably, the power supply adopts ER142503.6V lithium batteries.
Preferably, the piezoresistors are provided with three groups, one end of each piezoresistor is correspondingly connected to A, B, C phases of a three-phase line, and the other ends of the piezoresistors are respectively connected with a discharge counter connected to the single chip microcomputer I.
Compared with the prior art, the invention has the beneficial effects that: the operation temperature and humidity of the piezoresistor in the insulating tube are detected by the humidity detection module and the humidity detection module, so that the aging and damp corrosion conditions of the piezoresistor are monitored in real time, the loss caused by equipment accident shutdown due to the fact that the piezoresistor is damaged after the piezoresistor does not reach the discharge frequency is avoided, and the inaccuracy of the quality of the piezoresistor is roughly inferred due to the fact that the discharge frequency of the piezoresistor is judged subjectively; the pulse signal acquisition module detects pulse signals: the voltage generated by the pulse signal of the action of the piezoresistor is compared with the impulse voltage signal collected by the voltage sampling module to judge whether the piezoresistor is aged or not and is corroded by damp, and meanwhile, the piezoresistor is matched with temperature and humidity detection to be verified, so that the detection accuracy is guaranteed, whether the piezoresistor is damaged or not is known in time, and the use benefit of the overvoltage protector is improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the action surge voltage threshold of the piezoresistor under 6 kV.
In the figure: 1 singlechip I, 2 temperature acquisition module, 3 humidity detection module, 4 analog quantity acquisition module, 5 piezo-resistors, 6 pulse signal acquisition module, 7 power, 8 communication module, 80GPS time service system, 9 singlechip II, 10 voltage sampling module.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, the present invention provides a technical solution:
an overvoltage protector with a piezoresistor fault monitoring function comprises a single chip microcomputer I1, a detection module, a piezoresistor 5, a pulse signal acquisition module 6 and a voltage sampling module 10, wherein one end of the piezoresistor 5 is connected to a three-phase circuit, the other end of the piezoresistor is grounded, the detection module comprises a temperature acquisition module 2 and a humidity detection module 3, the temperature acquisition module 2 is connected with the single chip microcomputer I1 and acquires a temperature signal of the piezoresistor 5, and the humidity detection module 3 is connected with the single chip microcomputer I1 and acquires a humidity signal of the piezoresistor 5; the pulse signal acquisition module 6 is used for detecting a pulse signal generated by the action of the piezoresistor 5 and sending the acquired pulse signal to the singlechip I1; the single chip microcomputer I1 is connected with a single chip microcomputer II 9 for analyzing fault signals of the piezoresistor 5 through a communication module 8; the voltage sampling module 10 is used for collecting voltage signals of a three-phase line, the collected voltage signals are sent to the singlechip II 9 through the communication module 8, and fault signals comprise abnormal temperature and humidity, namely, overhigh temperature and overlarge humidity.
The detection module comprises a temperature acquisition module 2 and a humidity detection module 3, the temperature acquisition module 2 is connected with a single chip microcomputer I1 and acquires a temperature signal of a piezoresistor 5, the temperature acquisition module 2 acquires a humidity signal of the piezoresistor 5 through an analog quantity acquisition module 4, the humidity detection module 3 acquires a humidity signal of the piezoresistor 5 through the analog quantity acquisition module 4, the humidity detection module 3 is connected with the single chip microcomputer I1 and acquires a humidity signal of the piezoresistor 5, the single chip microcomputer I1 is connected with a single chip microcomputer II 9 for analyzing a fault signal of the piezoresistor 5 through a communication module 8, the communication module 8 adopts a 433m wireless module, the single chip microcomputer I1 is electrically connected with a power supply 7 and an alarm, the power supply 7 adopts an ER142503.6V lithium battery, and the single chip microcomputer I1 is continuously powered for a long time; temperature acquisition module 2, humidity detection module 3, communication module 8 and power 7 all integrate on singlechip I1, and small easily with overvoltage protector cooperation installation. The probe of the temperature acquisition module 2/the humidity detection module 3 extends into the insulating tube and is correspondingly used for acquiring the temperature/humidity signal of the piezoresistor 5; the piezoresistors 5 are provided with three groups, one end of each piezoresistor is correspondingly connected to A, B, C phases of a three-phase line, the other end of each piezoresistor is respectively connected with a discharge counter (not shown in the figure) connected to the single chip microcomputer I1, and A, B, C phases of the three-phase line are respectively grounded. The piezoresistor 5 is arranged in the insulating tube according to the design, a cavity is arranged between the piezoresistor 5 and the insulating tube, the cavity is filled with air, CG is a discharge gap, FR is the piezoresistor 5, each end of the three piezoresistors 5 is respectively and correspondingly connected to a circuit A, B, C phase, the other end is correspondingly grounded as D in figure 1, each piezoresistor 5 has a certain switching voltage (voltage-sensitive voltage) when manufactured, the piezoresistor value is very large under the normal working voltage (smaller than the voltage-sensitive voltage) and is equivalent to the insulating state, but under the action of impulse voltage (larger than the voltage-sensitive voltage), the piezoresistor is broken down in a low value, namely CG and FR are broken down, which is equivalent to the short-circuit state, when the impulse voltage (high voltage) is applied, the piezoresistor is broken down, the current flows into the ground through the piezoresistor, and the voltage on the power line can be controlled in a safe range, the safety of the electrical equipment is protected, the single chip microcomputer I1 and the single chip microcomputer II 9 adopt STM32F439 chips of ARM, the power consumption is low, the processing speed is high, the operation precision is high, the temperature acquisition module 2 adopts an Omega pt100 temperature sensor, a probe of the temperature acquisition module extends into the position close to the piezoresistor 5 with the insulating tube to acquire the temperature and the change value of the piezoresistor 5, the humidity detection module 3 adopts a Visala VAISALA temperature and humidity sensor, and the high-precision high-temperature resistant (70 ℃ below zero +180 ℃) HMM100 is used for detecting the humidity of the piezoresistor 5 of the insulating tube.
According to the actual use setting, the piezoresistors 5 are placed in the insulating tube in different quantities, the quantities are changed to adapt to the transmission lines of 6kV, 10kV and 35kV respectively, and the application range is widened.
Taking the application of the voltage protector in a 6kV line as an example: the temperature value detected by the temperature acquisition module 2 and the humidity value measured by the humidity detection module 3 are transmitted to the singlechip I1 through an AD (analog-digital) converter arranged in the singlechip I1, the singlechip I1 transmits the temperature and humidity values to the singlechip II 9 in a wireless transmission mode, specifically, the temperature and humidity values are wirelessly communicated with the singlechip II 9 through a 433m wireless module of an RX3310A chip, the singlechip II 9 is specifically an STM32F439 chip with functions of operation processing, waveform display and the like, the STM32F439 chip of the singlechip II 9 stores the impact voltage of the temperature and humidity values of the piezoresistor 5 during normal work, when the stored value is consistent with (or kept in an error range) compared with the temperature/humidity detected by the temperature acquisition module 2/humidity detection module 3, the piezoresistor 5 does not age and corrode under the damp during normal work, and if the stored value exceeds the deviation range, the alarm warns that the piezoresistor 5 needs to be replaced in time, so that the loss of users caused by equipment accident shutdown caused by repeated on-off of voltage and breakdown damage due to weak impact resistance, reduced impact voltage and frequent movement of the resistor is avoided, and meanwhile, the inaccuracy of deducing the quality of the piezoresistor 5 according to the discharge frequency of the piezoresistor is also avoided.
The singlechip II 9 is used for recording the voltage acquired by the voltage sampling module 10 and processing the voltage into a waveform curve chart, the voltage sampling modules 10 are three groups, voltage transformers are adopted, when the voltage is high, the three groups of voltage transformers of the voltage sampling module 10 respectively acquire A, B, C-phase voltage signals of a three-phase circuit, and the voltage signals are transmitted to the singlechip II 9 through a 433m wireless module after being converted (digital signals are converted into analog signals) to be analyzed and processed to obtain an analog quantity signal waveform chart; meanwhile, when in an FR action, the pulse signal acquisition module 6 respectively detects A, B, C-phase pulse signals of a three-phase line, sends the pulse signals to the single chip microcomputer i 1 for analysis and processing to obtain a pulse signal waveform diagram, and then sends the pulse signals to the single chip microcomputer ii 9 for comparison and processing through another group of 433m wireless modules, the pulse signal acquisition module 6 is used for judging (detecting) the action of the overvoltage protector, the action of the overvoltage protector generates pulse signals and the pulse signals are acquired by the pulse signal acquisition module 6, and the pulse signal acquisition system (Liyanxinshili Huachengyishu Shuyang Zhao) is specifically referred to; 433m wireless module enables wireless communication of signals between the single chip microcomputer I1 and the single chip microcomputer II 9 and between the single chip microcomputer II 9 and the voltage sampling module 10; in order to ensure that the oscillograms respectively acquired by the singlechip I1 and the singlechip II 9 at the same moment have no phase difference, the singlechip I1 is connected to the communication module 8 through the GPS time service system 80 and is in time synchronization with the singlechip II 9, so that the GPS clock synchronization between the singlechip I1 and the singlechip II 9 is ensured, and the voltage waveform acquired by the singlechip II 9 has no phase difference.
Taking phase A of A, B, C as an example, as shown in FIG. 2, at t1The time voltage sampling module 10 detects the processing of the A phase to obtain the corresponding voltage u1(impulse voltage) and pulse signal processing of the pulse signal acquisition module 6 to obtain corresponding voltage u2(ii) a The voltage dependent resistor 5 is normally operated and is not damaged when the voltage is 16 kV-19 kV; when voltage u2Below voltage u1(16kV) the piezoresistor 5 acts to indicate that the piezoresistor 5 is damaged and needs to be replaced in time; when the voltage u is collected by the voltage sampling module 101(> 19kV), and the piezoresistor 5 does not act, which indicates that the piezoresistor 5 is damaged and needs to be replaced in time.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides an overvoltage protector with piezo-resistor fault monitoring function, includes singlechip I (1), detection module, piezo-resistor (5), pulse signal acquisition module (6) and voltage sampling module (10), three-phase line is inserted to piezo-resistor (5) one end, other end ground connection, its characterized in that:
the detection module comprises a temperature acquisition module (2) and a humidity detection module (3), the temperature acquisition module (2) is connected with the singlechip I (1) and acquires temperature signals of the piezoresistor (5), and the humidity detection module (3) is connected with the singlechip I (1) and acquires humidity signals of the piezoresistor (5);
the pulse signal acquisition module (6) is used for detecting a pulse signal generated by the action of the piezoresistor (5) and sending the acquired pulse signal to the singlechip I (1);
the single chip microcomputer I (1) is connected with a single chip microcomputer II (9) for fault signal analysis of the piezoresistor (5) through a communication module (8);
the voltage sampling module (10) is used for collecting voltage signals of a three-phase line and sending the collected voltage signals to the singlechip II (9) through the communication module (8), and the singlechip I (1) is connected to the communication module (8) through the GPS time service system (80) and is aligned with the singlechip II (9).
2. An overvoltage protection device with varistor fault monitoring as claimed in claim 1 wherein: the temperature acquisition module (2) acquires humidity signals of the piezoresistor (5) through the analog acquisition module (4), and the humidity detection module (3) acquires the humidity signals of the piezoresistor (5) through the analog acquisition module (4).
3. An overvoltage protection device with varistor fault monitoring as claimed in claim 1 wherein: the communication module (8) adopts a 433m wireless module.
4. An overvoltage protection device with varistor fault monitoring as claimed in claim 1 wherein: singlechip I (1) electric connection has power (7) and alarm.
5. An overvoltage protector with varistor fault monitoring as claimed in claim 4 wherein: the power supply (7) adopts ER142503.6V lithium batteries.
6. An overvoltage protector with varistor fault monitoring as claimed in any one of claims 1 to 5 wherein: the piezoresistors (5) are provided with three groups, one end of each piezoresistor is correspondingly connected to A, B, C phases of a three-phase line, and the other end of each piezoresistor is respectively connected with a discharge counter connected to the single chip microcomputer I (1).
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| CN201711222291.9A CN108008192B (en) | 2017-11-29 | 2017-11-29 | Overvoltage protector with piezoresistor fault monitoring function |
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| CN108008192B true CN108008192B (en) | 2021-07-06 |
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| CN101789590A (en) * | 2009-01-22 | 2010-07-28 | 孙巍巍 | Novel surge protective device |
| CN103066703B (en) * | 2013-01-29 | 2014-11-05 | 南京信息工程大学 | Intelligent SPD (Surge Protective Device) based on internet of things |
| CN105021232A (en) * | 2015-08-06 | 2015-11-04 | 南阳高新区天成电气设备有限公司 | Method and device of humiture on-line monitoring of metal-oxide surge arrester |
| CN106469900A (en) * | 2015-08-20 | 2017-03-01 | 宿迁淮海科技服务有限公司 | A kind of self diagnosis Surge Protector |
| CN105353234B (en) * | 2015-10-10 | 2018-09-25 | 安徽天玄智能科技有限公司 | A kind of SPD on-line monitorings prior-warning device |
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Inventor after: Shi Bingyu Inventor after: Zhang Xiangli Inventor after: Wei Zhongfu Inventor after: Zhu Ling Inventor before: Zhu Ling |
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Effective date of registration: 20210622 Address after: 518000 3rd floor, Mingdao building, SEG Navigation Science Park, 28 cuibao Road, Baolong Science Park, Baolong street, Longgang District, Shenzhen City, Guangdong Province Applicant after: SHENZHEN PUTAI ELECTRICAL Co.,Ltd. Address before: No.g35, 3rd floor, software park, No.10 tiantongdao, Hefei New District, Anhui Province, 230088 Applicant before: HEFEI LINGQI INFORMATION TECHNOLOGY Co.,Ltd. |
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