CN107993939A - Improve metal layer corrosion default method - Google Patents
Improve metal layer corrosion default method Download PDFInfo
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- CN107993939A CN107993939A CN201711279353.XA CN201711279353A CN107993939A CN 107993939 A CN107993939 A CN 107993939A CN 201711279353 A CN201711279353 A CN 201711279353A CN 107993939 A CN107993939 A CN 107993939A
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- photoresist
- metal layer
- product
- light transmittance
- corrosion default
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The present invention provides a kind of improvement metal layer corrosion default method, in improvement metal layer corrosion default method provided by the invention, the improvement metal layer corrosion default method utilizes big data analysis, photoresist consumption described in thick metal layers etching technics is summed up with the product light transmittance, correlation of the photoresist etch rate with the product light transmittance, by increasing photoresist pre-treatment step and intelligently adjusting the processing time of the step, photoresist residual thickness is consistent after achieving the purpose that the final etching of different light transmittance products.Not only adjusting method is easy and effective, but also adjustable range is big, disclosure satisfy that large-scale product light transmittance demand.
Description
Technical field
The present invention relates to field of semiconductor manufacture, improves metal layer corrosion default method more particularly, to one kind.
Background technology
Metal layer corrosion default is very sensitive, it is necessary to strictly control to the remaining photoresist thickness of etching in integrated circuit fabrication
System, metal layer dry etch process includes metal layer etching and photoresist removes two processes.Although remaining photoresist all finally
It is cleaned, but how much the surplus of photoresist influences very for metal layer corrosion default process window after metal layer etching
Greatly.Under the conditions of same photoresist, usual photoresist residue is more, and metal layer corrosion default process window is smaller.But light
Photoresist residue very little, and can cause metal layer line top rake to damage, and influence resistance.Therefore remaining photoresist thickness must be tight after etching
Lattice control could obtain the batch production technique window of maximum within the specific limits.
The prior art usually sacrifices process window within the specific limits, and different photoresist residual thickness shows after reservation etches
Shape；Then improve defect by adjusting photoetching process photoresist thickness after defect failure.Its flow typically first confirms etching
The thickness gauge of remaining photoresist calculates etching consumption afterwards, then feeds back the photoresist thickness before photolithographic exposure to reach final etching
Photoresist target thickness afterwards.But what is thus brought is that the change of each photoresist thickness is required for readjusting conditions of exposure,
And due to being coated with the limitation with exposure technology, photoresist thickness can only be in a small range on the premise of process window is ensured
Adjustment, can not meet a large amount of different light transmittance product demands.
The content of the invention
It is an object of the invention to provide one kind to improve metal layer corrosion default method, to solve ensureing in the prior art
Photoresist thickness can only be adjusted in certain a small range on the premise of process window, can not meet a large amount of different light transmittance products
The problem of demand.
In order to achieve the above object, the present invention provides one kind to improve metal layer corrosion default method, comprises the following steps：
Obtain correlation of the metal layer etch step photoresist consumption with product light transmittance；
Correlation of the photoresist etch rate with product light transmittance when acquisition is to photoresist progress pre-treatment；
Photoresist residual thickness desired value is set, and according to the first step and second step, before the photoresist for determining each product
The theoretical time of processing；And
The photoresist of product is performed etching using the theoretical time of the 3rd step.
Optionally, the photoresist consumption is linear with the product light transmittance, meets formula Y1=aX+b, its
Middle Y1 is the photoresist consumption, and X is the product light transmittance, and a, b are constant.
Optionally, the photoresist etch rate is linear with the product light transmittance, meets formula Y2=cX+d,
Wherein Y2 is the photoresist etch rate, and X is the product light transmittance, and c, d are constant.
Optionally, the theoretical time of the photoresist pre-treatment is tried to achieve according to formula Time=(T0-T1-Y1)/Y2, wherein
Time is the processing time before the photoresist, and T0 is initial light photoresist thickness, and T1 is photoresist residual thickness desired value, and Y1 is
The photoresist consumption, Y2 are the photoresist etch rate.
Optionally, the step of being performed etching using the theoretical time of the 3rd step to the photoresist of product includes：To the production
The photoresist of product carries out pre-treatment, for adjusting photoresist thickness.
Optionally, using Ar/N2/O2Mixed gas pre-treatment, the mixed gas are carried out to the photoresist of the product
Ratio requires to be changed according to different product to the different of etch rate.
Optionally, in the step of being performed etching using the theoretical time of the 3rd step to the photoresist of product, photoresist is carved
The longitudinal speed of erosion is fast, and horizontal speed is very slow, so as to reduce the influence wide to metal layer line x wire.
Optionally, the specification of the photoresist residual thickness meets
Optionally, after being performed etching using the theoretical time of the 3rd step to the photoresist of product, after obtaining photoresist etching
Actual (real) thickness, and verified with the photoresist residual thickness desired value of setting.
Optionally, the improvement metal layer corrosion default method integration is etched in formula in metal layer, is etched with metal layer
Step is completed in same process cavity.
In conclusion in improvement metal layer corrosion default method provided by the invention, metal layer etch step light is obtained
Correlation of the photoresist consumption with product light transmittance；Photoresist pre-treatment etch application is developed, is counted and obtained based on experimental data
Correlation of the photoresist etch rate with product light transmittance when must be to photoresist progress pre-treatment；Set photoresist residual thickness mesh
Scale value, and according to the first step and second step, determine the theoretical time of the photoresist pre-treatment of each product；And apply the 3rd step
Theoretical time the photoresist of product is performed etching.The improvement metal layer corrosion default method is first analyzed and sums up thick gold
It is saturating with the product with the product light transmittance, the photoresist etch rate to belong to photoresist consumption described in layer etching technics
The correlation of light rate, by increasing photoresist pre-treatment step and intelligently adjusting the processing time of the step, reaches different printing opacities
The consistent purpose of photoresist residual thickness after rate product finally etches.Conventional art is usually by varying the photoetching before photolithographic exposure
Glue thickness realizes, but what is thus brought is that the change of each photoresist thickness is required for readjusting conditions of exposure, and
Due to being coated with the limitation with exposure technology, photoresist thickness can only be in a small range tune on the premise of process window is ensured
It is whole, it can not meet a large amount of different light transmittance product demands.And after applying the present invention, not only adjusting method is easy and effective, but also adjusts
Adjusting range is big, disclosure satisfy that large-scale product light transmittance demand.
Brief description of the drawings
Fig. 1 is the structure diagram before a kind of reference product etching；
Fig. 2 is the structure diagram after a kind of reference product etching；
Fig. 3 is the structure diagram after another product etching；
Fig. 4 is the structure diagram before etching after another product adjustment photoresist thickness；
Fig. 5 is the structure diagram before being etched in the embodiment of the present invention after another product pre-treatment；
Fig. 6 is the flow diagram of improvement metal layer corrosion default method provided in an embodiment of the present invention；
Regression straight line figures of the Fig. 7 between photoresist consumption provided in an embodiment of the present invention and product light transmittance；
Regression straight line figures of the Fig. 8 between photoresist etch rate provided in an embodiment of the present invention and product light transmittance；
Fig. 9 is photoetching of the different light transmittance products provided in an embodiment of the present invention in the case of two kinds of pre-treatment step is whether there is
Glue surplus comparison diagram；
Figure 10 is the scope that metal layer line x wire is wide after different light transmittance products provided in an embodiment of the present invention etch
Schematic diagram；
Wherein, 1- photoresists, 2- metal layers, 3- oxide layers.
Embodiment
The embodiment of the present invention is described in more detail below in conjunction with schematic diagram.According to description below and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is using very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As described in the background art, in integrated circuit fabrication metal layer corrosion default to the remaining photoresist thickness of etching
Very sensitive, so the residual thickness of photoresist needs stringent control, the prior art usually sacrifices process window within the specific limits,
Its flow typically first confirms that the thickness gauge of remaining photoresist after etching calculates etching consumption, then feeds back the light before photolithographic exposure
Photoresist thickness carrys out and reaches photoresist target thickness after final etching.Such as the base condition of product A is thick for photoresist 1 before etching
T0 (as shown in Figure 1), photoresist 1 and the etching of metal layer 2 are spent until exposing oxide layer 3, and at this time, 1 thickness of photoresist is T1 (as schemed
Shown in 2)；When product B is imported, 1 thickness T0 of photoresist will be applied first, by confirm etching photoresist 1 and metal layer 2 until
Expose 1 thickness T1 ' (as shown in Figure 3) of photoresist after oxide layer 3, and then photoresist 1 is thick before calculating the required etchings of product B
T0 '=T0+ (T1 '-T1) is spent, (as shown in Figure 4), 1 residual thickness of photoresist that final products B has been etched will be as product A
(as shown in Figure 2).The rest may be inferred, and photoresist thickness T0 ' before numerous different etching is extrapolated for products C, D, E etc..
But changes of photoresist thickness is required for readjusting conditions of exposure to reach the demand of line width every time, and due to being coated with,
Exposure, the limitation of developing process, and the self property of every kind of photoresist, the photoresist thickness on the premise of process window is ensured
Can only be adjusted in certain a small range, can not meet a large amount of different light transmittance product demands.
Therefore, to solve the above-mentioned problems, the present invention provides one kind to improve metal layer corrosion default method.
Refering to Fig. 6, it is the flow diagram of improvement metal layer corrosion default method provided in an embodiment of the present invention, is such as schemed
Shown in 6, the improvement metal layer corrosion default method comprises the following steps:
Step S1：Obtain correlation of the metal layer etch step photoresist consumption with product light transmittance；
Step S2：Correlation of the photoresist etch rate with product light transmittance when acquisition is to photoresist progress pre-treatment；
Step S3：Photoresist residual thickness desired value is set, and according to the first step and second step, determines the light of each product
The theoretical time of photoresist pre-treatment；And
Step S4：The photoresist of product is performed etching using the theoretical time of the 3rd step.
Used in an embodiment provided by the inventionMetal layer, photoetching useI-line
Photoresist.
In one embodiment, the material of the metal layer includes metallic aluminium, silver, copper, tin and its alloy etc..
Refering to form 1, the Experiment Data Records form of photoresist consumption and product light transmittance；It is real for the present invention refering to 2
That applies example offer improves the correlation of metal layer etching photoresist consumption and product light transmittance in metal layer corrosion default method
Statistical chart.With reference to table 1 and Fig. 7, step S1 is described in detail,
Table 1
As shown in table 1, it is different light transmittance products, the data note of photoresist consumption when corresponding metal layer etches
Record.The virtual value of product light transmittance is 20%~80% in the present embodiment, and the data in table 1 can obtain as shown in Figure 7
Photoresist consumption and product light transmittance between regression straight line figure, photoresist consumption and production during in order to be etched to metal layer
The correlation of product light transmittance is analyzed, and the present embodiment applies the regression analysis in quantity statistics, as shown in fig. 7, with product
Light transmittance is abscissa, and photoresist consumption is ordinate, has obtained 5 coordinate points as illustrated in the drawing, according to this 5 coordinates
Point has made a linear regression straight line.This straight line is set to Y1=aX+b, wherein Y1 is the photoresist consumption, and X is
The product light transmittance, a, b are constant, and constant b can be tried to achieve according to formula (1)：
Constant a can be tried to achieve according to formula 2：
It is 3366 that can retain the value that integer is 45242, a in the hope of the value of b to retain integer according to formula (1) and formula (2),
Thus the equation that we can obtain regression straight line is Y1=45242X+3366, in order to further understand metal layer etching
When photoresist consumption and product light transmittance linear relationship level of intimate, it is necessary to obtain the coefficient of determination of the regression straight line
R2, and coefficient of determination can be tried to achieve according to formula 3：
According to formula 3, R is tried to achieve2Value to retain after decimal four be 0.9749, it is very close with 1, illustrate metal layer
The linearly related degree of photoresist consumption and product light transmittance is close during etching, can approximately think that photoresist consumes during erosion
It is linear between amount and product light transmittance.
In step s 2, such as using including Ar/N2/O2Reacting gas, the ratio of gas can be according to different product to carving
The different of erosion speed require to be changed, and collect correlation of the photoresist etch rate with product light transmittance.According to what is be collected into
Photoresist etch rate can obtain table 2, and corresponding Fig. 8 with the data of product light transmittance.
Table 2
As shown in table 2, the data record of the pre-treatment photoresist etch rate corresponding to different light transmittance products.This
The virtual value of product light transmittance is 20%~80% in embodiment, and the data in table 2 can obtain photoetching as shown in Figure 8
Regression straight line figure between glue etch rate and product light transmittance, in step s 2, using with analysis side same in step S1
Method analyzes the relation between photoresist etch rate and product light transmittance, just repeats no more herein, in step s 2, will be linear
Regression beeline equation is set to Y2=cX+d, and wherein Y2 is the photoresist etch rate, and X is the product light transmittance, and c, d are normal
Amount.
The value that formula in step S1 can try to achieve c respectively retains three value reservations for 63.425, d after decimal point
Three are 75.388 after decimal point, then can obtain regression beeline equation is Y2=63.4X+75.4.Coefficient of determination R2Value retain
Four are 0.9502 after decimal point, very close with 1, illustrate that pre-treatment photoresist etch rate is linear with product light transmittance
Degree of correlation is close, can approximately think photoresist etch rate with linear between product light transmittance.
In step s3, set photoresist residual thickness desired value asAccording to step S1 and step
The data being collected into rapid S2, can try to achieve the place before the photoresist of each product according to formula Time=(T0-T1-Y1)/Y2
Manage the time, wherein Time represents the photoresist pre-treatment time, and T0 is initial light photoresist thickness, and T1 is photoresist residual thickness target
Value, Y1 is photoresist consumption, and Y2 is photoresist etch rate.Known data are substituted into formula, when can be processed
Between formula be：Time=(50000-15000-Y1)/Y2=(31644-45242X)/(63.4X+75.4), when theoretical calculation
The value of Time then represents that pre-treatment need not be added when being negative value, and the time is set to 0.
According to formula, we can obtain form 3, as follows：
| Product | A | B | C | D | E | F |
| Light transmittance (Clear%) | 29% | 30% | 38% | 55% | 61% | 75% |
| The photoresist pre-treatment time (Sec) | 195 | 189 | 145 | 59 | 35 | 0 |
Table 3
We are recognized that the processing time before the photoresist corresponding to different light transmittance products from table 3.
In step s 4, the theoretical calculation time of applying step S3 performs etching the photoresist of product and verifies on product
Actual etching after photoresist residual thickness, follow and compared without using pre-treatment, form 4 and Fig. 9 can be obtained, it is as follows：
Table 4
It can be seen that the surplus of different light transmittance product photoresists from table 4 and Fig. 9, it can be seen that follow without using preceding place
Reason is compared, and photoresist residual thickness otherness improves significantly, and is satisfied bySpecification.
Finally, using the wide length of the final metal layer line x wire on the theoretical calculation time verifying product of the 3rd step,
Setting, the wide requirement of metal layer line x wire are 2.85 μm~3.65 μm, and transverse direction here is the direction parallel to crystal column surface,
Table 5 and Figure 10 can be obtained, it is as follows:
| Product | A | B | C | D | E | F |
| Light transmittance (Clear%) | 29% | 30% | 38% | 55% | 61% | 75% |
| The photoresist pre-treatment time (Sec) | 195 | 189 | 145 | 59 | 35 | 0 |
| Final line width (μm) after etching | 3.34 | 3.24 | 3.2 | 3.14 | 2.97 | 3.08 |
Table 5
According to table 5 and Figure 10, it is known that method of the invention influences final line width less, to meet product requirement.To the greatest extent
Pipe is longer with the pre-treatment time, and the reduction to photoresist is more, and line width should be smaller after etching, and is practically without seeing this
Phenomenon.Because etching final line width depends primarily upon metal layer etch step, and the step is also more sensitive to light transmittance.Light transmittance
Smaller, line width is bigger.
Heretofore described improvement metal layer corrosion default method is located before one step photoresist of increase before metal layer etches
Reason step is used to adjust photoresist thickness, is finally reached the remaining desired value of photoresist thickness after etching, as shown in Figure 4 and Figure 5,
Etch preceding after product pre-treatment and the photoresist thickness after product adjustment photoresist thickness before etching is basic one in the prior art
Sample, and can reach different product printing opacity it is recognized that using pre-treatment step product etching photoresist from upper data
The consistent purpose of photoresist residual thickness after rate finally etches, so as to strictly control metal layer corrosion default, ensures product quality.
Preferably, the improvement metal layer corrosion default method integration is etched in formula in metal layer, is etched with metal layer
Step is completed in same process cavity.
Method provided by the present invention etches photoresist, and to metal layer, SiO2There is no etching rate Deng inorganic dielectric film, from
And the influence to metal layer can be avoided.
Preferably, method provided by the present invention is fast to the longitudinal speed of photoresist etching, and horizontal speed is very slow, so as to gold
The influence for belonging to layer line transverse direction line width is preferably minimized.
In conclusion in improvement metal layer corrosion default method provided in an embodiment of the present invention；The improvement metal layer
Corrosion default side includes：Obtain correlation of the metal layer etch step photoresist consumption with product light transmittance；Obtain to photoetching
Correlation of the photoresist etch rate with product light transmittance during glue progress pre-treatment；Photoresist residual thickness desired value is set, and
According to the first step and second step, the theoretical time of the photoresist pre-treatment of each product is determined；And the theory of the 3rd step of application
Time performs etching the photoresist of product.The improvement metal layer corrosion default method utilizes big data analysis, sums up thickness
Photoresist consumption described in metal layer etching technics is with the product light transmittance, and the photoresist etch rate is with the product
The correlation of light transmittance, by increasing photoresist pre-treatment step and intelligently adjusting the processing time of the step, reaches different saturating
The consistent purpose of photoresist residual thickness after light rate product finally etches.Conventional art is usually by varying the light before photolithographic exposure
Photoresist thickness realizes, but what is thus brought is that the change of each photoresist thickness is required for readjusting conditions of exposure, and
And due to being coated with the limitation with exposure technology, photoresist thickness can only be in a small range tune on the premise of process window is ensured
It is whole, it can not meet a large amount of different light transmittance product demands.And after applying the present invention, not only adjusting method is easy and effective, but also adjusts
Adjusting range is big, disclosure satisfy that large-scale product light transmittance demand, and the method for the present invention influences final line width less, can
Meet product requirement.
The preferred embodiment of the present invention is above are only, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (10)
1. one kind improves metal layer corrosion default method, it is characterised in that including：
Obtain correlation of the metal layer etch step photoresist consumption with product light transmittance；
Correlation of the photoresist etch rate with product light transmittance when acquisition is to photoresist progress pre-treatment；
Photoresist residual thickness desired value is set, and according to the first step and second step, determines the photoresist pre-treatment of each product
Theoretical time；And
The photoresist of product is performed etching using the theoretical time of the 3rd step.
2. improve metal layer corrosion default method as claimed in claim 1, it is characterised in that the photoresist consumption is with institute
It is linear to state product light transmittance, it is the photoresist consumption to meet formula Y1=aX+b, wherein Y1, and X is the product
Light transmittance, a, b are constant.
3. improve metal layer corrosion default method as claimed in claim 1, it is characterised in that described that preceding place is carried out to photoresist
Photoresist etch rate is linear with the product light transmittance during reason, and it is the light to meet formula Y2=cX+d, wherein Y2
Photoresist etch rate, X are the product light transmittance, and c, d are constant.
4. improve metal layer corrosion default method as claimed in claim 1, it is characterised in that the reason of the photoresist pre-treatment
Tried to achieve by the time according to formula Time=(T0-T1-Y1)/Y2, wherein Time is the processing time before the photoresist, and T0 is first
Beginning photoresist thickness, T1 are photoresist residual thickness desired value, and Y1 is the photoresist consumption, and Y2 etches for the photoresist
Speed.
5. improve metal layer corrosion default method as claimed in claim 1, it is characterised in that using the theoretical time of the 3rd step
The step of being performed etching to the photoresist of product includes：Pre-treatment is carried out to the photoresist of the product, for adjusting photoresist
Thickness.
6. the improvement metal layer corrosion default method as described in claim 1 or 5, it is characterised in that using Ar/N2/O2Mixing
Gas carries out pre-treatment, difference of the ratio of gas mixture according to different product to etch rate to the photoresist of the product
It is required that it is changed.
7. improve metal layer corrosion default method as claimed in claim 1, it is characterised in that using the theoretical time of the 3rd step
In the step of being performed etching to the photoresist of product, etch that longitudinal speed is fast, and horizontal speed is slow, so as to reduce to gold to photoresist
Belong to the influence of layer line transverse direction line width.
8. improve metal layer corrosion default method as claimed in claim 1, it is characterised in that the photoresist residual thickness mesh
The specification of scale value meets
9. improve metal layer corrosion default method as claimed in claim 1, it is characterised in that using the theoretical time of the 3rd step
After being performed etching to the photoresist of product, obtain actual (real) thickness after photoresist etching, and with the photoresist residual thickness mesh of setting
Scale value is verified.
10. improve metal layer corrosion default method as claimed in claim 1, it is characterised in that the improvement metal layer corrosion
Defect method integration is etched in formula in metal layer, is completed with metal layer etch step in same process cavity.
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| CN201711279353.XA CN107993939B (en) | 2017-12-06 | 2017-12-06 | Method for improving corrosion defect of metal layer |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233419A (en) * | 1998-02-18 | 1999-08-27 | Ricoh Co Ltd | Light quantity inspection method, etching rate measuring method, mask for inspection, and mask for manufacturing |
| CN102479680A (en) * | 2010-11-29 | 2012-05-30 | 中国科学院微电子研究所 | Manufacturing method of semiconductor device |
| CN103034045A (en) * | 2012-12-12 | 2013-04-10 | 京东方科技集团股份有限公司 | Halftone mask plate and manufacturing method for same |
| US20140349440A1 (en) * | 2013-05-22 | 2014-11-27 | Canon Kabushiki Kaisha | Planarization method |
| US20160225801A1 (en) * | 2015-01-30 | 2016-08-04 | Hydis Technologies Co., Ltd. | Method for Forming Hole Pattern and Method for Manufacturing TFT Display Using the Same |
| CN105914181A (en) * | 2016-06-03 | 2016-08-31 | 华进半导体封装先导技术研发中心有限公司 | Preparation method of redistribution layer |
-
2017
- 2017-12-06 CN CN201711279353.XA patent/CN107993939B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233419A (en) * | 1998-02-18 | 1999-08-27 | Ricoh Co Ltd | Light quantity inspection method, etching rate measuring method, mask for inspection, and mask for manufacturing |
| CN102479680A (en) * | 2010-11-29 | 2012-05-30 | 中国科学院微电子研究所 | Manufacturing method of semiconductor device |
| CN103034045A (en) * | 2012-12-12 | 2013-04-10 | 京东方科技集团股份有限公司 | Halftone mask plate and manufacturing method for same |
| US20140349440A1 (en) * | 2013-05-22 | 2014-11-27 | Canon Kabushiki Kaisha | Planarization method |
| US20160225801A1 (en) * | 2015-01-30 | 2016-08-04 | Hydis Technologies Co., Ltd. | Method for Forming Hole Pattern and Method for Manufacturing TFT Display Using the Same |
| CN105914181A (en) * | 2016-06-03 | 2016-08-31 | 华进半导体封装先导技术研发中心有限公司 | Preparation method of redistribution layer |
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| CN107993939B (en) | 2020-05-01 |
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