CN107979285A - A kind of power-switching circuit - Google Patents
A kind of power-switching circuit Download PDFInfo
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- CN107979285A CN107979285A CN201711382792.3A CN201711382792A CN107979285A CN 107979285 A CN107979285 A CN 107979285A CN 201711382792 A CN201711382792 A CN 201711382792A CN 107979285 A CN107979285 A CN 107979285A
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- Prior art keywords
- effect tube
- field
- type field
- grid
- diode
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of power-switching circuit, including：P-type field-effect tube, N-type field-effect tube and grid control module；Wherein, the first end of grid control module is connected with voltage input end, and the second end of grid control module is connected with the grid of p-type field-effect tube and the grid of N-type field-effect tube respectively, the 3rd end grounding connection of grid control module；The drain electrode of the source electrode and N-type field-effect tube of p-type field-effect tube is connected with voltage input end respectively, and the drain electrode of p-type field-effect tube and the source electrode of N-type field-effect tube are connected with load respectively；When input voltage is less than predeterminated voltage, grid control module control p-type field-effect tube conducting, N-type field-effect tube is closed；When input voltage is more than or equal to predeterminated voltage, grid control module control p-type field-effect tube is closed, the conducting of N-type field-effect tube.The power-switching circuit is simple in structure, and cost is low, few without feedback loop compensation, chip occupying area without reference to voltage and current biasing circuit.
Description
Technical field
The present invention relates to the power-switching circuit technical field of integrated circuit, more specifically, more particularly to a kind of power supply
Conversion circuit.
Background technology
With the continuous development of scientific technology, various electronic equipments be widely used to daily life with
And in work, bring great convenience for the life and work of people.
Based on Analogous Integrated Electronic Circuits, when input voltage range is larger, a power conversion module is generally required, by wide model
The input voltage enclosed is converted to relatively low constant voltage and powers to internal circuit.
Traditional power conversion method is that portion integrates a LDO (Low Dropout Regulator, low pressure in the chip
Linear voltage regulator), LDO uses the transistor run in the range of linearity, and the voltage of excess is subtracted from the input voltage of application,
Produce the output voltage through overregulating.
LDO is high a little with output voltage precision, but needs to provide reference voltage in band-gap reference, also relates to multiple
Miscellaneous feedback loop compensation, design complexities are very high, and can take larger chip area.Based on some Analogous Integrated Electronic Circuits,
The required precision of supply voltage is not very high, only requires supply voltage in safe range, will not burn out internal circuit,
It is usually following at mA grade and power supply capacity requirement is nor very high, in this case, continuing to use LDO that cost can be caused unnecessary
Increase.
So, how to provide a kind of circuit simple power-switching circuit, being that those skilled in the art are urgently to be resolved hurrily asks
Topic.
The content of the invention
To solve the above problems, the present invention provides a kind of power-switching circuit, the power-switching circuit is simple in structure, into
This is low, and chip occupancy is low.
To achieve the above object, the present invention provides following technical solution：
A kind of power-switching circuit, the power-switching circuit include：P-type field-effect tube, N-type field-effect tube and grid
Control module；
Wherein, the first end of the grid control module is connected with voltage input end, and the second of the grid control module
End is connected with the grid of the p-type field-effect tube and the grid of the N-type field-effect tube respectively, and the of the grid control module
Three end grounding connections；The drain electrode of the source electrode of the p-type field-effect tube and the N-type field-effect tube respectively with the voltage input end
Connection, the drain electrode of the p-type field-effect tube and the source electrode of the N-type field-effect tube are connected with load respectively；
When input voltage is less than predeterminated voltage, the grid control module controls the p-type field-effect tube conducting, described
N-type field-effect tube is closed；When input voltage is more than or equal to the predeterminated voltage, the grid control module controls the p-type
Field-effect tube is closed, the N-type field-effect tube conducting.
Preferably, in above-mentioned power-switching circuit, the grid control module includes：First resistor, second resistance,
One diode, the first field-effect tube, the second field-effect tube, the 3rd field-effect tube and the 4th field-effect tube；
Wherein, one end of the first resistor is connected with the voltage input end, the other end of the first resistor and institute
The anode connection of the first diode is stated, the cathode of first diode is connected with the drain electrode of first field-effect tube, described
The source electrode grounding connection of first field-effect tube, the grid of first field-effect tube and the grid of second field-effect tube connect
Connect, and the grid of first field-effect tube is connected with the drain electrode of first field-effect tube, the source of second field-effect tube
Pole grounding connection, the drain electrode of second field-effect tube are connected with the drain electrode of the 3rd field-effect tube, the 3rd field-effect
The source electrode of pipe is connected with the voltage input end, and the grid of the 3rd field-effect tube connects with the grid of the 4th field-effect tube
Connect, and the grid of the 3rd field-effect tube is connected with the drain electrode of the 3rd field-effect tube, the source of the 4th field-effect tube
Pole is connected with the voltage input end, and the drain electrode of the 4th field-effect tube passes through the second resistance grounding connection, the p-type
The grid of field-effect tube is connected with the drain electrode of the 4th field-effect tube, the grid of the N-type field-effect tube and the described 1st
The anode connection of pole pipe.
Preferably, in above-mentioned power-switching circuit, first field-effect tube is N-type field-effect tube, second described
Effect pipe is N-type field-effect tube, the 3rd field-effect tube is p-type field-effect tube and the 4th field-effect tube is p-type field
Effect pipe.
Preferably, in above-mentioned power-switching circuit, first diode is zener diode.
Preferably, in above-mentioned power-switching circuit, the grid control module further includes：Second diode；
Wherein, the anode of second diode is connected with the voltage input end, the cathode of second diode with
Node connection between the drain electrode of 4th field-effect tube and the grid of the p-type field-effect tube.
Preferably, in above-mentioned power-switching circuit, second diode is zener diode.
Preferably, in above-mentioned power-switching circuit, the grid control module further includes：The diode of multiple series connection；
Wherein, one end of the anode of the diode after the completion of multiple series connection and the drain and gate of first field-effect tube
Connecting node connection, one end of the cathode of the diode after the completion of multiple series connection is connected with the cathode of first diode.
By foregoing description, a kind of power-switching circuit provided by the invention includes：P-type field-effect tube, N-type field effect
It should manage and grid control module；Wherein, the first end of the grid control module is connected with voltage input end, the grid control
The second end of molding block is connected with the grid of the p-type field-effect tube and the grid of the N-type field-effect tube respectively, the grid
3rd end grounding connection of control module；The drain electrode of the source electrode of the p-type field-effect tube and the N-type field-effect tube respectively with institute
Voltage input end connection is stated, the drain electrode of the p-type field-effect tube and the source electrode of the N-type field-effect tube are connected with load respectively；
When input voltage is less than predeterminated voltage, the grid control module controls the p-type field-effect tube conducting, the N-type field effect
Should pipe closing；When input voltage is more than or equal to the predeterminated voltage, the grid control module controls the p-type field-effect tube
Close, the N-type field-effect tube conducting.
The power-switching circuit is simple in structure, and cost is low, without reference to voltage and current biasing circuit, without feedback control loop
Compensation, chip occupying area are few.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structure diagram of power-switching circuit provided in an embodiment of the present invention；
Fig. 2 is the structure diagram of another power-switching circuit provided in an embodiment of the present invention；
Fig. 3 is the structure diagram of another power-switching circuit provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
With reference to figure 1, Fig. 1 is a kind of structure diagram of power-switching circuit provided in an embodiment of the present invention.
The power-switching circuit includes：P-type field-effect tube Mp3, N-type field-effect tube Mn3 and grid control module 11.
Wherein, the first end of the grid control module 11 is connected with voltage input end Vin, the grid control module 11
Second end be connected respectively with the grid of the p-type field-effect tube Mp3 and the grid of the N-type field-effect tube Mn3, the grid
3rd end grounding connection of control module 11；The drain electrode of the source electrode of the p-type field-effect tube Mp3 and the N-type field-effect tube Mn3
It is connected respectively with the voltage input end Vin, the drain electrode of the p-type field-effect tube Mp3 and the source of the N-type field-effect tube Mn3
Pole is connected with load respectively.
When input voltage vin is less than predeterminated voltage, the grid control module 11 controls the p-type field-effect tube Mp3
Conducting, the N-type field-effect tube Mn3 are closed；When input voltage vin is more than or equal to the predeterminated voltage, the grid control
Module 11 controls the p-type field-effect tube Mp3 to close, the N-type field-effect tube Mn3 conductings.
Specifically, the power-switching circuit only needs a p-type field-effect tube Mp3 and a N-type field-effect tube Mn3
With grid control module 11, realize and input voltage vin is converted into output voltage VDD, under normal circumstances the model of input voltage vin
Enclose wider, such as 0V-20V, output voltage VDD be used for the device power supply in low-pressure region, such as device for 3.3V devices or
1.8V devices etc., such as the voltage endurance according to 5V devices, its supply voltage are generally less than 6V, i.e. output voltage VDD needs
Less than 6V, for the power-switching circuit when input voltage vin is less than 6V, p-type field-effect tube Mp3 conductings, VDD=Vin, works as input
When voltage Vin is more than or equal to 6V, p-type field-effect tube closes Mp3, and N-type field-effect tube conducting Mn3, passes through grid control module 11
In specific component, its output voltage VDD is clamped at below 6V.
With reference to figure 2, Fig. 2 is the structure diagram of another power-switching circuit provided in an embodiment of the present invention.
Further, as shown in Fig. 2, the grid control module 11 includes：First resistor R1, second resistance R2, first
Diode D1, the first field-effect tube Mn1, the second field-effect tube Mn2, the 3rd field-effect tube Mp1 and the 4th field-effect tube Mp2.
Wherein, one end of the first resistor R1 is connected with the voltage input end Vin, and the first resistor R1's is another
End is connected with the anode of the first diode D1, and the cathode of the first diode D1 is with the first field-effect tube Mn1's
Drain electrode connection, the source electrode grounding connection of the first field-effect tube Mn1, the grid of the first field-effect tube Mn1 and described the
The grid connection of two field-effect tube Mn2, and the leakage of the grid of the first field-effect tube Mn1 and the first field-effect tube Mn1
Pole connects, the source electrode grounding connection of the second field-effect tube Mn2, the drain electrode and the described 3rd of the second field-effect tube Mn2
The drain electrode connection of field-effect tube Mp1, the source electrode of the 3rd field-effect tube Mp1 is connected with the voltage input end Vin, and described the
The grid of three field-effect tube Mp1 is connected with the grid of the 4th field-effect tube Mp2, and the grid of the 3rd field-effect tube Mp1
Pole is connected with the drain electrode of the 3rd field-effect tube Mp1, source electrode and the voltage input end of the 4th field-effect tube Mp2
Vin connections, the drain electrode of the 4th field-effect tube Mp2 pass through the second resistance R2 grounding connections, the p-type field-effect tube
The grid of Mp3 is connected with the drain electrode of the 4th field-effect tube Mp2, the grid and the described 1st of the N-type field-effect tube Mn3
The anode connection of pole pipe D1.
As shown in Fig. 2, the first field-effect tube Mn1 is N-type field-effect tube, the second field-effect tube Mn2 is N-type field
Effect pipe, the 3rd field-effect tube Mp1 are p-type field-effect tube and the 4th field-effect tube Mp2 is p-type field-effect tube.
Optionally, the first diode D1 is zener diode.
Specifically, for example, the breakdown reverse voltage about 5.5V, the first field-effect tube Mn1 of the first diode D1
Cut-in voltage about 0.5V, when input voltage vin is less than 6V, the first diode D1 is not breakdown, it is described first effect
Should not there is no electric current in pipe Mn1, at this time the grid voltage VGP=0V of the p-type field-effect tube Mp3, i.e., described p-type field-effect tube
Mp3 is turned on, the grid voltage VGN=Vin of the N-type field-effect tube Mn3, i.e., described N-type field-effect tube Mn3 is closed, the p-type
Field-effect tube Mp3 works in the range of linearity, by output voltage VDD and input voltage vin short circuit, i.e. VDD=Vin, needed for load
The electric current wanted is provided by the p-type field-effect tube Mp3.
When input voltage vin is more than or equal to 6V, the first diode D1 is breakdown, and breakdown current flows through described first
Field-effect tube Mn1, then passes through the second field-effect tube Mn2, the 3rd field-effect tube Mp1 and the 4th field-effect
Pipe Mp2 flows through the second resistance R2 by mirror image twice and amplification, sets the resistance value of the second resistance R2 bigger, so that
The grid voltage VGP current potentials of the p-type field-effect tube Mp3 up to arrive input voltage vin very, i.e., described p-type field-effect tube Mp3 is closed
Close, be also used for protecting the gate oxide of the p-type field-effect tube Mp3 not breakdown, at this time only described N-type field-effect tube Mn3
Conducting, for powering load, the N-type field-effect tube Mn3 works in saturation region at this time, its grid voltage VGN is clamped at
Vzr+Vgs_Mn1, wherein, Vzr is both ends clamp voltage after the first diode D1 reverse breakdowns, and Vgs_Mn1 is described the
Vgs voltages during one field-effect tube Mn1 subthreshold conductions, then output voltage VDD=Vzr+Vgs_Mn1-Vgs_Mn3 at this time,
Wherein, Vgs_Mn3 is the threshold voltage of the N-type field-effect tube Mn3, and about 0.8V, at this time, output voltage VDD about stablize
Near Vzr.
Further, as shown in Fig. 2, the grid control module 11 further includes：Second diode D2.
Wherein, the anode of the second diode D2 is connected with the voltage input end Vin, the second diode D2's
Node connection between the grid of the drain electrode of cathode and the 4th field-effect tube Mp2 and the p-type field-effect tube Mp3.
Specifically, the second diode D2 is used for by the Vgs clampers of the p-type field-effect tube Mp3 within 5.5V, really
The Vgs voltages for protecting the p-type field-effect tube Mp3 will not the excessive gate oxide for puncturing the p-type field-effect tube Mp3.
Optionally, the second diode D2 is zener diode.
Further, as shown in figure 3, the grid control module 11 further includes：The diode of multiple series connection.
Wherein, the drain electrode of one end of the anode of the diode after the completion of multiple series connection and the first field-effect tube Mn1 and
The connecting node connection of grid, one end of the cathode of the diode after the completion of multiple series connection and the cathode of the first diode D1
Connection.
Specifically, n diode is sealed between the first diode D1 and the first field-effect tube Mn1, i.e. S1,
S2 ... Sn, for example, after a diode is often sealed in, can make the final burning voltages of output voltage VDD improve 0.7V left
It is right.
It should be noted that can also be by using the diode with different clamp voltages or with different threshold voltages
Field-effect tube adjust the burning voltage of final output voltage VDD, in embodiments of the present invention and be not construed as limiting.
Seen from the above description, its circuit structure of a kind of power-switching circuit provided by the invention is simple, the first device used
Part is few, and cost is low, compared to LDO circuit more of the prior art, without reference to voltage and current biasing circuit, without feedback control loop
Compensation, chip occupying area are few.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (7)
1. a kind of power-switching circuit, it is characterised in that the power-switching circuit includes：P-type field-effect tube, N-type field-effect
Pipe and grid control module；
Wherein, the first end of the grid control module is connected with voltage input end, the second end point of the grid control module
It is not connected with the grid of the p-type field-effect tube and the grid of the N-type field-effect tube, the 3rd end of the grid control module
Grounding connection；The drain electrode of the source electrode of the p-type field-effect tube and the N-type field-effect tube connects with the voltage input end respectively
Connect, the drain electrode of the p-type field-effect tube and the source electrode of the N-type field-effect tube are connected with load respectively；
When input voltage is less than predeterminated voltage, the grid control module controls the p-type field-effect tube conducting, the N-type
Field-effect tube is closed；When input voltage is more than or equal to the predeterminated voltage, the grid control module controls the p-type field effect
Should pipe close, N-type field-effect tube conducting.
2. power-switching circuit according to claim 1, it is characterised in that the grid control module includes：First electricity
Resistance, second resistance, the first diode, the first field-effect tube, the second field-effect tube, the 3rd field-effect tube and the 4th field-effect
Pipe；
Wherein, one end of the first resistor is connected with the voltage input end, the other end of the first resistor and described the
The anode connection of one diode, the cathode of first diode are connected with the drain electrode of first field-effect tube, and described first
The source electrode grounding connection of field-effect tube, the grid of first field-effect tube are connected with the grid of second field-effect tube, and
The grid of first field-effect tube is connected with the drain electrode of first field-effect tube, the source electrode ground connection of second field-effect tube
Connection, the drain electrode of second field-effect tube are connected with the drain electrode of the 3rd field-effect tube, the source of the 3rd field-effect tube
Pole is connected with the voltage input end, and the grid of the 3rd field-effect tube is connected with the grid of the 4th field-effect tube, and
The grid of 3rd field-effect tube is connected with the drain electrode of the 3rd field-effect tube, the source electrode of the 4th field-effect tube and institute
Voltage input end connection is stated, the drain electrode of the 4th field-effect tube passes through the second resistance grounding connection, the p-type field-effect
The grid of pipe is connected with the drain electrode of the 4th field-effect tube, the grid of the N-type field-effect tube and first diode
Anode connects.
3. power-switching circuit according to claim 2, it is characterised in that first field-effect tube is N-type field-effect
Pipe, second field-effect tube are N-type field-effect tube, the 3rd field-effect tube is p-type field-effect tube and 4th described
Effect pipe is p-type field-effect tube.
4. power-switching circuit according to claim 2, it is characterised in that first diode is zener diode.
5. power-switching circuit according to claim 2, it is characterised in that the grid control module further includes：Second
Diode；
Wherein, the anode of second diode is connected with the voltage input end, the cathode of second diode with it is described
Node connection between the grid of the drain electrode of 4th field-effect tube and the p-type field-effect tube.
6. power-switching circuit according to claim 5, it is characterised in that second diode is zener diode.
7. the power-switching circuit according to claim 2 or 5, it is characterised in that the grid control module further includes：It is more
The diode of a series connection；
Wherein, one end of the anode of the diode after the completion of multiple series connection and the company of the drain and gate of first field-effect tube
Node connection is connect, one end of the cathode of the diode after the completion of multiple series connection is connected with the cathode of first diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711382792.3A CN107979285B (en) | 2017-12-20 | 2017-12-20 | Power supply conversion circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711382792.3A CN107979285B (en) | 2017-12-20 | 2017-12-20 | Power supply conversion circuit |
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| Publication Number | Publication Date |
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| CN107979285A true CN107979285A (en) | 2018-05-01 |
| CN107979285B CN107979285B (en) | 2020-04-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711382792.3A Active CN107979285B (en) | 2017-12-20 | 2017-12-20 | Power supply conversion circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109787611A (en) * | 2019-01-09 | 2019-05-21 | 上海艾为电子技术股份有限公司 | A kind of selection biasing circuit certainly suitable for electrical level transferring chip |
| CN113162415A (en) * | 2021-05-08 | 2021-07-23 | 上海爻火微电子有限公司 | Input/output management circuit of power supply and electronic equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200943712A (en) * | 2008-04-01 | 2009-10-16 | Richtek Technology Corp | Dual power switch and voltage regulator using same |
| CN204559380U (en) * | 2015-03-27 | 2015-08-12 | 绵阳豪迈电子科技有限公司 | For the load driving circuits that the input of managing system of car parking is boosted |
| CN105830342A (en) * | 2016-02-29 | 2016-08-03 | 香港应用科技研究院有限公司 | Harmonic suppression circuit of switch mode power amplifier |
-
2017
- 2017-12-20 CN CN201711382792.3A patent/CN107979285B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200943712A (en) * | 2008-04-01 | 2009-10-16 | Richtek Technology Corp | Dual power switch and voltage regulator using same |
| CN204559380U (en) * | 2015-03-27 | 2015-08-12 | 绵阳豪迈电子科技有限公司 | For the load driving circuits that the input of managing system of car parking is boosted |
| CN105830342A (en) * | 2016-02-29 | 2016-08-03 | 香港应用科技研究院有限公司 | Harmonic suppression circuit of switch mode power amplifier |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109787611A (en) * | 2019-01-09 | 2019-05-21 | 上海艾为电子技术股份有限公司 | A kind of selection biasing circuit certainly suitable for electrical level transferring chip |
| CN109787611B (en) * | 2019-01-09 | 2023-04-28 | 上海艾为电子技术股份有限公司 | Self-selection bias circuit suitable for level conversion chip |
| CN113162415A (en) * | 2021-05-08 | 2021-07-23 | 上海爻火微电子有限公司 | Input/output management circuit of power supply and electronic equipment |
| CN113162415B (en) * | 2021-05-08 | 2024-03-15 | 上海爻火微电子有限公司 | Input/output management circuit of power supply and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107979285B (en) | 2020-04-07 |
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