CN107966761B - A kind of gradual change is coupled device - Google Patents
A kind of gradual change is coupled device Download PDFInfo
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- CN107966761B CN107966761B CN201711437296.3A CN201711437296A CN107966761B CN 107966761 B CN107966761 B CN 107966761B CN 201711437296 A CN201711437296 A CN 201711437296A CN 107966761 B CN107966761 B CN 107966761B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
A kind of gradual change is coupled device, is related to optic communication integrated device field, including gradual change SiO 2 waveguide, bending gradual change silicon waveguide and Matching band, and gradual change SiO 2 waveguide is pyramidal structure, and width becomes narrow gradually along the direction for being optically coupled into chip.Bending gradual change silicon waveguide is located in gradual change SiO 2 waveguide, its width gradually broadens, and most wide end and the most narrow end of gradual change SiO 2 waveguide are generally aligned in the same plane, the most narrow end for being bent the waveguide of gradual change silicon is tip, and bend, most the distance between wide end of tip and gradual change SiO 2 waveguide is d1.Matching band material is the matching fluid that refractive index is lower than silica, it is coated on gradual change SiO 2 waveguide side wall, Matching band is divided into multiple matching subregions along the direction for being optically coupled into chip, and the length d0 of the matching subregion to connect with gradual change SiO 2 waveguide most wide end is less than the d1.The present invention can reduce the length of coupler, solve the problems, such as that back-reflection is high.
Description
Technical field
The present invention relates to optic communication integrated device field, in particular to a kind of gradual change is coupled device.
Background technique
The coupling of silicon based photon chip and optical fiber is very crucial.Silica-based optical fibers coupling is divided into grating coupling and end coupling two
Kind.Grating coupler must be perpendicular to chip incidence, and Bandwidth-Constrained.End coupling device generally uses back taper structure, i.e. coupling
The silicon duct width of clutch becomes narrow gradually towards coupling end face direction.In order to realize the large mode field to match with optical fiber, generally will
The buried oxide layer and substrate silicon of coated Si waveguide hollow out, and realize the SiO 2 waveguide of suspension, and fill out around SiO 2 waveguide
Enter the expansion that refractive index is slightly below the matching fluid realization mould field of silica.Light is divided into two mistakes from fiber coupling into silicon waveguide
Journey needed access to the large mode field of optical fiber before this from fiber coupling into SiO 2 waveguide；Then it is coupled into from SiO 2 waveguide
Enter silicon waveguide, needs small mould field small as far as possible.Current method has just thought of first process, in second process, optical mode field
Size is still very big, therefore coupler length is longer, and back-reflection is high.In addition, light is directly coupled into high refractive index
Silicon waveguide also brings excessively high back-reflection.
Summary of the invention
In view of the deficiencies in the prior art, the purpose of the present invention is to provide a kind of gradual changes to be coupled device, reduces
The length of coupler solves the problems, such as that back-reflection is high.
To achieve the above objectives, the present invention takes a kind of gradual change to be coupled device, comprising:
Gradual change SiO 2 waveguide, is pyramidal structure, and width becomes narrow gradually along the direction for being optically coupled into chip；
It is bent the waveguide of gradual change silicon, is located in the gradual change SiO 2 waveguide, width edge is optically coupled into chip
Direction gradually broadens, and its most wide end and the most narrow end of the gradual change SiO 2 waveguide are generally aligned in the same plane, and the bending is gradually
Become the most narrow end of silicon waveguide as tip, and tip bends in the height direction, the bending gradual change silicon waveguide tip bending
The width at place is less than or equal to 80nm, and bending angle is greater than 0 degree, and is less than or equal to 60 degree；The tip and the gradual change titanium dioxide
Most the distance between wide end of silicon waveguide is d1；
Matching band, material are the matching fluid that refractive index is lower than silica, are coated on the gradual change SiO 2 waveguide
Side wall, the Matching band is divided into multiple matching subregions along the direction for being optically coupled into chip, with the gradual change SiO 2 waveguide
The matching subregion that most wide end connects is less than the d1 along the length d0 for being optically coupled into chip direction.
Based on the above technical solution, the refractive index of the matching subregion is all larger than equal to 1, and edge is optically coupled into
The direction of chip, in two adjacent matching subregions, the refractive index of previous matching subregion is more than or equal to the latter and matches subregion
Refractive index.
Based on the above technical solution, the two neighboring matching subregion is by silicon dioxide spacer, the silicon dioxide
Length along the direction for being optically coupled into chip is 2 μm to 5 μm.
Based on the above technical solution, the width of the bending gradual change silicon waveguide most wide end is more than or equal to 350nm, and
Less than or equal to 600nm.
Based on the above technical solution, the range of the d1 is 20 μm≤d1≤60 μm.
Based on the above technical solution, the width W range of the most wide end of the gradual change SiO 2 waveguide are as follows: D-2 μ
M≤W≤D+2 μm, wherein D is the mode field diameter that the corresponding optical fiber of device is coupled with the gradual change.
Based on the above technical solution, the width of the most narrow end of the gradual change SiO 2 waveguide is more than or equal to 3.5 μ
M, and it is less than or equal to 7 μm；Length of the gradual change SiO 2 waveguide along the direction for being optically coupled into chip is more than or equal to 150 μ
M is less than or equal to 300 μm.
Based on the above technical solution, it is length that the gradual change, which is coupled device along the direction for being optically coupled into chip,
Direction, the direction vertical with width and length direction are short transverse, and the height of the gradual change SiO 2 waveguide is along optocoupler
Close enter chip direction it is constant always, the height of the bending gradual change silicon waveguide is along being optically coupled into the direction of chip always not
Become.
Based on the above technical solution, in the height direction, between the Matching band and gradual change SiO 2 waveguide
Distance be H, and 50 μm≤H≤150 μm.
The beneficial effects of the present invention are: it is bent by being bent gradual change silicon waveguide tip, passes through multiple matching subregions
Optimize the index matching in coupling process, reduces the mismatch of the refractive index of silicon and silica, solve back-reflection
High problem reduces light against the reflection of coupling direction, reduces the length that entire gradual change is coupled device.
Detailed description of the invention
Fig. 1 is the cross-sectional view that gradual change of the embodiment of the present invention is coupled device width direction；
Fig. 2 is the cross-sectional view that gradual change of the embodiment of the present invention is coupled device short transverse.
Appended drawing reference: gradual change SiO 2 waveguide 1, bending gradual change silicon waveguide 2, the first Matching band 31, the second Matching band 32,
Silica 4.
Specific embodiment
Invention is further described in detail with reference to the accompanying drawings and embodiments.
As depicted in figs. 1 and 2, it includes gradual change SiO 2 waveguide 1, bending gradual change silicon wave that gradual change of the present invention, which is coupled device,
Lead 2 and Matching band.In Fig. 1, the direction of X arrow meaning is the direction for being optically coupled into chip, is used as gradual change in the present embodiment
Length direction with coupler, the direction of Y arrow meaning are the width direction that gradual change is coupled device；In Fig. 2, Z arrow is signified
Direction be gradual change be coupled device height it is reversed, length, width and short transverse are vertical two-by-two.
Gradual change SiO 2 waveguide 1 is pyramidal structure, and width becomes narrow gradually along the direction for being optically coupled into chip.It is preferred that
, the height of gradual change SiO 2 waveguide 1 is constant always along the direction for being optically coupled into chip.
Bending gradual change silicon waveguide 2 be located in gradual change SiO 2 waveguide 1, be bent 2 width of gradual change silicon waveguide along optical coupling into
The direction for entering chip gradually broadens, and is bent 2 most wide end of gradual change silicon waveguide and the most narrow end of gradual change SiO 2 waveguide 1 positioned at same
Plane.The most narrow end for being bent gradual change silicon waveguide 2 is tip, and tip bends, and in the present embodiment, tip is in the height direction
It bends.In the longitudinal direction, be bent gradual change silicon waveguide 2 tip and the most wide end of gradual change SiO 2 waveguide 1 between away from
From for d1.Preferably, the height for being bent gradual change silicon waveguide 2 is constant always along the direction for being optically coupled into chip.
Matching band is coated on 1 side wall of gradual change SiO 2 waveguide, and material is the matching fluid that refractive index is lower than silica.
Matching band is divided into the first matching subregion 31 along the direction for being optically coupled into chip, and second matches subregion 32 ... ..., N matching
Subregion, the number for matching subregion are determined by technological ability, and two neighboring matching subregion is spaced by silica 4.Fig. 1 and Fig. 2
In, only represent two matching subregions.Also, the matching subregion to connect with the most wide end of gradual change SiO 2 waveguide 1 is along optical coupling
Length into chip direction is less than above-mentioned d1, i.e., the length d0 of the first matching subregion 31 is less than d1.The folding of all matching subregions
It penetrates rate and is both greater than equal to 1, and along the direction for being optically coupled into chip, two adjacent matching subregions, previous matching subregion
Refractive index be more than or equal to the latter matching subregion refractive index.For example, first matching subregion 31 refractive index be n1, second
Refractive index with subregion 32 is n2 ... ..., and the refractive index that N matches subregion is nN, then the relationship of refractive index is n1 >=n2
≥……≥nN。
Preferably, the width W range of the most wide end of gradual change SiO 2 waveguide 1 are as follows: D-2 μm≤W≤D+2 μm, wherein D be with
Gradual change is coupled the mode field diameter that device corresponds to optical fiber.The width of the most narrow end of gradual change SiO 2 waveguide 1 is more than or equal to 3.5 μm,
And it is less than or equal to 7 μm.Length of the gradual change SiO 2 waveguide 1 along the direction for being optically coupled into chip is more than or equal to 150 μm, is less than
Equal to 300 μm.
Preferably, be bent 2 bent at its tip of gradual change silicon waveguide at width be less than or equal to 80nm, bending angle be greater than 0 degree, and
Less than or equal to 60 degree.The width for being bent 2 most wide end of gradual change silicon waveguide is more than or equal to 350nm, and is less than or equal to 600nm.The model of d1
Enclosing is: 20 μm≤d1≤60 μm.
Preferably, the silica 4 between two neighboring matching subregion, the length along the direction for being optically coupled into chip
It is 2 μm to 5 μm.In the height direction, the distance between Matching band and gradual change SiO 2 waveguide are H, and the μ of 50 μm≤H≤150
m.The refractive index of first matching subregion 31 is more than or equal to 1.4, and less than 1.444.
The present invention is not limited to the above-described embodiments, for those skilled in the art, is not departing from
Under the premise of the principle of the invention, several improvements and modifications can also be made, these improvements and modifications are also considered as protection of the invention
Within the scope of.The content being not described in detail in this specification belongs to the prior art well known to professional and technical personnel in the field.
Claims (9)
1. a kind of gradual change is coupled device characterized by comprising
Gradual change SiO 2 waveguide, is pyramidal structure, and width becomes narrow gradually along the direction for being optically coupled into chip；
It is bent the waveguide of gradual change silicon, is located in the gradual change SiO 2 waveguide, width is along the direction for being optically coupled into chip
It gradually broadens, and its most wide end and the most narrow end of the gradual change SiO 2 waveguide are generally aligned in the same plane, the bending gradual change silicon
The most narrow end of waveguide is tip, and tip bends in the height direction, the bending gradual change silicon waveguide tip knee
Width is less than or equal to 80nm, and bending angle is greater than 0 degree, and is less than or equal to 60 degree；The tip and the gradual change silica wave
Most the distance between the wide end led is d1；
Matching band, material are the matching fluid that refractive index is lower than silica, are coated on the gradual change SiO 2 waveguide side wall,
The Matching band is divided into multiple matching subregions along the direction for being optically coupled into chip, with the gradual change SiO 2 waveguide most wide end
The matching subregion to connect is less than the d1 along the length d0 for being optically coupled into chip direction.
2. gradual change as described in claim 1 is coupled device, it is characterised in that: the refractive index of the matching subregion is all larger than
In 1, and along the direction for being optically coupled into chip, two adjacent matching subregions, the refractive index of previous matching subregion is greater than
Equal to the refractive index of the latter matching subregion.
3. gradual change as described in claim 1 is coupled device, it is characterised in that: the two neighboring matching subregion is by titanium dioxide
Silicon interval, length of the silicon dioxide along the direction for being optically coupled into chip is 2 μm to 5 μm.
4. gradual change as described in claim 1 is coupled device, it is characterised in that: the width of the bending gradual change silicon waveguide most wide end
Degree is more than or equal to 350nm, and is less than or equal to 600nm.
5. gradual change as described in claim 1 is coupled device, it is characterised in that: the range of the d1 is the μ of 20 μm≤d1≤60
m。
6. gradual change as described in claim 1 is coupled device, which is characterized in that the most wide end of the gradual change SiO 2 waveguide
Width W range are as follows: D-2 μm≤W≤D+2 μm, wherein D is the mode field diameter that the corresponding optical fiber of device is coupled with the gradual change.
7. gradual change as described in claim 1 is coupled device, it is characterised in that: the most narrow end of the gradual change SiO 2 waveguide
Width be more than or equal to 3.5 μm, and be less than or equal to 7 μm；The gradual change SiO 2 waveguide is along the direction for being optically coupled into chip
Length be more than or equal to 150 μm, be less than or equal to 300 μm.
8. as the described in any item gradual changes of claim 1-7 are coupled device, it is characterised in that: the gradual change is coupled device edge
Be optically coupled into chip direction be length direction, the direction vertical with width and length direction be short transverse, it is described gradually
The height for becoming SiO 2 waveguide is constant always along the direction for being optically coupled into chip, the height edge of the bending gradual change silicon waveguide
The direction for being optically coupled into chip is constant always.
9. gradual change as claimed in claim 8 is coupled device, it is characterised in that: in the height direction, the Matching band and gradually
Become the distance between SiO 2 waveguide as H, and 50 μm≤H≤150 μm.
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Citations (4)
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|---|---|---|---|---|
| EP1400822A2 (en) * | 2002-09-20 | 2004-03-24 | Nippon Telegraph and Telephone Corporation | Mode-field transforming planar optical waveguide device and manufacturing method |
| CN104391354A (en) * | 2014-11-21 | 2015-03-04 | 武汉邮电科学研究院 | Coupled structure between optical fiber and high refractive index waveguide |
| CN104459890A (en) * | 2014-12-29 | 2015-03-25 | 武汉邮电科学研究院 | Optical fiber and silicon waveguide coupling structure based on polymer waveguides and manufacturing method thereof |
| EP3115813A1 (en) * | 2014-03-05 | 2017-01-11 | Nippon Telegraph and Telephone Corporation | Polarization rotation circuit |
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2017
- 2017-12-26 CN CN201711437296.3A patent/CN107966761B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1400822A2 (en) * | 2002-09-20 | 2004-03-24 | Nippon Telegraph and Telephone Corporation | Mode-field transforming planar optical waveguide device and manufacturing method |
| EP3115813A1 (en) * | 2014-03-05 | 2017-01-11 | Nippon Telegraph and Telephone Corporation | Polarization rotation circuit |
| CN104391354A (en) * | 2014-11-21 | 2015-03-04 | 武汉邮电科学研究院 | Coupled structure between optical fiber and high refractive index waveguide |
| CN104391354B (en) * | 2014-11-21 | 2017-06-13 | 武汉邮电科学研究院 | A kind of coupled structure between optical fiber and high index waveguide |
| CN104459890A (en) * | 2014-12-29 | 2015-03-25 | 武汉邮电科学研究院 | Optical fiber and silicon waveguide coupling structure based on polymer waveguides and manufacturing method thereof |
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