CN107947590B - Single-power integrated driving circuit of switch capacitor bidirectional direct current converter and control method - Google Patents
Single-power integrated driving circuit of switch capacitor bidirectional direct current converter and control method Download PDFInfo
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- CN107947590B CN107947590B CN201711319484.6A CN201711319484A CN107947590B CN 107947590 B CN107947590 B CN 107947590B CN 201711319484 A CN201711319484 A CN 201711319484A CN 107947590 B CN107947590 B CN 107947590B
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- 239000003990 capacitor Substances 0.000 title claims abstract description 139
- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 14
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- 238000010586 diagram Methods 0.000 description 10
- 238000004088 simulation Methods 0.000 description 9
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33584—Bidirectional converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a single power supply integrated drive circuit of a switch capacitor bidirectional direct current converter and a control method thereof. The MOSFET driving chip is simple in structure and easy to integrate, and the isolated power supply module comprises a primary side inverter circuit, a high-frequency transformer and a secondary side rectifying circuit, and occupies a major part of the cost and the volume of the driving circuit. The single power supply driving circuit for the high-gain bidirectional direct current converter is suitable for a switching capacitor network-based single power supply driving circuit, and is beneficial to reducing the cost of the driving circuit and improving the power density.
Description
Technical Field
The invention belongs to the application of an energy storage converter in the field of new energy distributed power generation, and particularly relates to a single power integrated driving circuit of a switched capacitor bidirectional direct current converter and a control method.
Background
The new energy distributed power generation technology represented by photovoltaic, wind power and fuel cells is rapidly developed, and has important strategic significance for optimizing an energy structure and realizing sustainable development of economy and environment. The storage battery energy storage system is used as an energy buffer unit, and can effectively improve the adverse effects of renewable energy sources on fluctuation and intermittence of power grid transmission power. In the energy storage converter, the bidirectional direct current converter plays a key role in bidirectional regulation from the energy of the storage battery to the power of the high-voltage direct current bus, on one hand, when the energy generation amount of the new energy is larger than the load demand of the power grid, the redundant energy on the bus is charged into the storage battery through the voltage-reducing direct current converter, and on the other hand, when the energy generation amount of the new energy is smaller than the load demand, the electric quantity in the storage battery is fed back to the power grid through the voltage-increasing direct current converter, so that the peak clipping and valley filling effects are realized. In general, the port voltage may not exceed 48V in consideration of the battery serial characteristics and safety regulations, and the voltage levels of a typical dc micro-grid are mainly 200V, 270V, 400V, and 540V. Therefore, the dc converter needs to have a high voltage gain in addition to satisfying the energy bi-directional flow.
The conventional dc converter is affected by parasitic parameters of a main circuit and performance of a controller, and has a difficulty in having a high voltage gain even if a duty ratio reaches a limit state close to 0 or 1. The power tube is conducted in extremely short time and bears relatively large voltage and current stress, so that serious switching loss and switching noise are caused, and the efficiency is obviously reduced. The coupling inductance and the switch capacitance network are the main technical means for realizing non-isolated high-gain direct current conversion at present. The switch capacitor network skillfully realizes parallel charging of a plurality of capacitors through switch switching, and then the capacitors are serially discharged, so that the output voltage of the converter is improved. Compared with other high-gain direct current conversion technologies, the switched capacitor inductance network type energy storage converter has the remarkable advantages of high efficiency, high power density and easiness in modularization, and has good application prospect in medium and small power type energy storage converters.
A typical switched capacitor network high gain dc converter topology is shown in fig. 1. Compared with the traditional direct current converter, the direct current converter based on the switched capacitor network is beneficial to reducing the voltage stress of a switching device and the requirement of a passive element in a high-gain step-up/step-down occasion. To further increase the voltage gain, a plurality of basic voltage gain expansion units can be introduced to form a multi-unit switched capacitor network high-gain direct current converter, as shown in fig. 2. Usually, 2-3 units can meet the voltage gain requirement of the application occasion. At the same voltage gain, the multi-cell converter reduces the power semiconductor device and the single capacitor voltage stress on the one hand, and reduces the input current ripple and the magnetic element requirements by reducing the boost duty cycle on the other hand. In addition, the multi-unit switch capacitor network is flexible in design, and the number of basic units can be adjusted according to voltage gain requirements.
The switched capacitor network high-gain dc converter shown in fig. 1 introduces a plurality of switching devices that do not share a source, and thus requires independent power modules to provide the driving voltage. A typical drive circuit design is shown in block 3, where 3 isolated drive power supplies are required when driving 3 switching devices that do not share a source. In particular for the multi-cell high gain dc converter shown in fig. 2, the drive circuit needs to provide an isolated power supply for each MOSFET. In the MOSFET driving circuit, the driving chip is simple in structure and easy to integrate, and the isolated driving power supply comprises a primary side inverter circuit, a high-frequency transformer and a secondary side rectifying circuit, so that the cost and the volume of the driving circuit are obviously increased.
Disclosure of Invention
The invention aims to provide a single-power integrated driving circuit of a direct-current converter with a direct-current switch capacitor and a control method, simplify the driving circuit of the direct-current converter with a high gain based on a switch capacitor network, and realize the low-cost and miniaturized modularized driving design of single-power supply.
In order to achieve the above purpose, the invention is realized by adopting the following technical scheme:
a single power supply integrated drive circuit of a switch capacitor bidirectional DC converter comprises a converter main circuit and a drive circuit,
The converter main circuit comprises N power tubes S j and N-1 direct current capacitors C k, wherein j is more than or equal to 1 and less than or equal to N, k is more than or equal to 1 and less than or equal to N-1, the source electrodes and the drain electrodes of the N power tubes are sequentially connected to form a series structure, and the working states of any adjacent power tubes are complementary; any capacitor C k is respectively connected in parallel with the two ends of the source electrode of the upper pipe S k+1 and the drain electrode of the lower pipe S k of the two power pipes which are connected in series, and k is more than or equal to 1 and less than or equal to N-1;
The driving circuit comprises N driving chips, a DC-DC isolation power supply module, N voltage stabilizing capacitors C Pi and N-1 diodes D i, wherein i is more than or equal to 1 and less than or equal to N; the gate electrode output end v gi of each driving chip is connected with the gate electrode of the power tube S i through a driving resistor R g respectively, the negative end v si of the driving voltage of the gate electrode of the driving chip is connected with the source electrode of the power tube S i, and the direct-current voltage stabilizing capacitor C Pi is connected between the positive end v di and the negative end v si of the output side of the driving chip; the diode D j is connected between the positive voltage ends v dj and v d（j+1） of the two adjacent driving chips.
As a further improvement of the present invention, the voltage stress of the diode D 2、D3…DN is the capacitance C 1、C2…CN-1, respectively.
As a further improvement of the invention, the gate capacitance of the bootstrap capacitor takes the following values:
Wherein: q g is the gate charge of the power tube, V Cpk is the driving capacitor voltage, and ε max is the preset maximum capacitor voltage drop coefficient.
A control method of a single power integrated drive circuit of a switched capacitor bidirectional DC converter comprises the following steps:
When the converter works normally, any two adjacent power tubes are complementarily conducted, and two working modes are included:
Mode 1: ， At this time, the odd power transistors S 1、S3、S5…Sj are turned on, j is an odd number, the even power transistors S 2、S4、S6…Sk are turned off, and k is an even number;
mode 2: ， at this time, the power tube S 1、S3、S5…Sj is turned off, and j is an odd number; the power tube S 2、S4、S6…Sk is turned on, and k is an even number;
When the power tube S 1 is turned on, the DC voltage stabilizing capacitor C P1 charges the gate of the power tube S 1 through the resistor R g, And the second driving chip direct current voltage stabilizing capacitor C P2 is supplied with power through the diode D 2 and the power tube S 1, at the moment, the power tube S 2 is turned off, Diode D 3 bears back pressure to cut off, power tube S 3 is turned on, DC voltage stabilizing capacitor C P3 supplies power to the gate electrode of power tube S 3 through resistor R g, The fourth driving chip voltage stabilizing capacitor C P4 is charged through the diode D 4 and the power tube S 3, and so on; When the power tube S 1 is turned off, the diode D 2 is turned off under the back pressure, the power tube S 2 is turned on, the DC voltage stabilizing capacitor C P2 charges the gate electrode of the power tube S 2 through the resistor R g, And power is supplied to the third driving chip stabilizing capacitor C P3 through the diode D 3 and the power tube S 2, S 3 is turned off, Diode D 2 is subject to back-pressure cutoff, and so on.
As a further improvement of the invention, the specific steps are as follows:
Assuming that the respective lifting capacitor voltage in the driving circuit is zero at the initial moment, when PWM=1 is input, all even power tubes are turned off, the first driving chip outputs a reference high level and is provided by an isolation power supply, and the power tubes S 1 are smoothly turned on; the other odd power tubes cannot be turned on because the voltage on the corresponding bootstrap capacitor is zero; the power transistor S 1 is turned on such that at this point the source potential of the power transistor S 2 is equal to the source potential of the power transistor S 1, so the diode D 2 is forward biased on, The direct-current voltage-stabilizing capacitor C P1 charges the direct-current voltage-stabilizing capacitor C P2 rapidly until the voltage at two ends of the direct-current voltage-stabilizing capacitor C P2 is the output voltage of the isolated power supply, so as to prepare for the turn-on of the power tube S 2 at the next moment; then, when pwm=0 is input, all odd power transistors are turned off, since the dc voltage stabilizing capacitor C P2 obtains energy stored from the dc voltage stabilizing capacitor C P1 and maintains a certain voltage during pwm=1, the second driving chip smoothly turns on the power transistor S 2 when outputting a reference high level, The rest even power tubes cannot be conducted due to no voltage on the corresponding bootstrap capacitor, the power tube S 2 is conducted so that the source electrode potential of the power tube S 3 is equal to that of the power tube S 2 at the moment, therefore, the diode D 3 is conducted in a forward bias way, The direct-current voltage stabilizing capacitor C P2 charges the direct-current voltage stabilizing capacitor C P3 until the voltages of the two capacitors are equal, and provides high-level starting voltage for the power tube S 3 at the next moment; Repeating the steps, and when the circuit reaches a steady state, obtaining voltages which are approximately isolated from the power supply output on the capacitors respectively;
In steady state, the voltages of all bootstrap capacitors are approximate to the voltages of the isolated power supply modules, and in the power stage circuit, the source electrode potentials of all odd power tubes are fixed and unchanged and become the corresponding capacitor voltages in the main circuit; the source electrode potential of all even power tubes is floating and changes along with the periodic switching of the circuit working mode; when pwm=1, all odd power transistors are turned on, the source potential of all even power transistors S k is equal to the source potential of the odd power transistor S k-1 in the lower adjacent position, and the bootstrap capacitor C P(k-1) in the odd position charges the bootstrap capacitor C P(k) in the upper adjacent position; when pwm=0, all even power transistors are turned on, and the source potential of all even power transistors S k is equal to the source potential of its adjacent high-order odd power transistor S k+1, and the even-order bootstrap capacitor C P(k) charges the bootstrap capacitor C P(k+1) of the adjacent high-order.
Compared with the prior art, the invention has the following beneficial effects:
The bidirectional direct current converter single power supply driving circuit skillfully combines the working state of the power tube of the main circuit, utilizes the diode and the capacitor to form a bootstrap circuit and provides driving voltage for each power tube, thereby being capable of adopting a single isolated power supply module to supply power. The MOSFET driving chip has a simple structure and is easy to integrate, and the isolated power supply module comprises a primary side inverter circuit, a high-frequency transformer and a secondary side rectifying circuit, and occupies a major part of the cost and the volume of the driving circuit. According to the invention, a diode-capacitor circuit network is introduced, and a driving circuit is designed by combining with a conducting channel of the MOSFET, so that single power supply of a plurality of MOSFETs is realized; the single power supply driving circuit of the high-gain bidirectional direct current converter is applicable to a switched capacitor network-based high-gain bidirectional direct current converter, is beneficial to reducing the cost of the driving circuit and improving the power density.
According to the control method, when the converter works normally, any two adjacent power tubes are complementarily conducted, and under two working modes of the driving circuit, the output capacitor Cp 1 of the isolation power supply skillfully and orderly completes power supply to the output side capacitor of the high-voltage side MOFET driving chip, so that single power supply of a multi-MOSFET serial structure is realized.
Drawings
FIG. 1a is a schematic diagram of a high-gain bi-directional DC converter main circuit based on a switched capacitor network;
FIG. 1b is a schematic diagram of a high-gain bi-directional DC converter main circuit based on a switched capacitor network;
FIG. 1c is a schematic diagram of a high-gain bi-directional DC converter main circuit based on a switched capacitor network;
FIG. 2a is a schematic diagram of a multi-cell switched capacitor network high gain bi-directional DC converter main circuit;
FIG. 2b is a schematic diagram of a multi-cell switched capacitor network high gain bi-directional DC converter main circuit;
FIG. 2c is a schematic diagram of a multi-cell switched capacitor network high gain bi-directional DC converter main circuit;
FIG. 3 is a schematic diagram of a driving circuit (3 power tubes) of a high-gain DC converter with a switched capacitor network in the prior art;
FIG. 4a is a schematic diagram of a single power driving circuit (3 switches) according to the present invention;
FIG. 4b is a schematic diagram of a single power driving circuit (N switches) according to the present invention;
FIG. 5a is a simulation waveform I of a driving circuit of the converter of FIG. 1c using a single power driving scheme;
FIG. 5b is a simulation waveform II of a driving circuit of the converter of FIG. 1c using a single power driving scheme;
FIG. 5c is a simulation waveform III of a drive circuit of the converter of FIG. 1c using a single power drive scheme;
FIG. 5d is a simulation waveform IV of a drive circuit of the converter of FIG. 1c using a single power drive scheme;
FIG. 5e is a simulated waveform five of a drive circuit of the converter of FIG. 1c using a single power drive scheme;
FIG. 5f is a simulation waveform six of a drive circuit of the converter of FIG. 1c using a single power drive scheme;
FIG. 6a is a simulation waveform one of a main circuit of the converter of FIG. 1c using a single power drive scheme;
FIG. 6b is a second simulation waveform of a main circuit of the converter of FIG. 1c using a single power drive scheme;
FIG. 6c is a third main circuit simulation waveform of the converter of FIG. 1c using a single power drive scheme;
FIG. 6d is a simulated waveform IV of a main circuit of the converter of FIG. 1c using a single power drive scheme;
FIG. 7a is a graph I of experimental waveforms of a power tube driving voltage waveform, b main circuit inductor current, output voltage, power tube voltage and current waveforms of the converter of FIG. 1c using a single power driving scheme;
fig. 7b is a schematic diagram of experimental waveforms a and b of the main circuit inductor current, output voltage, power tube voltage and current waveforms of the converter of fig. 1c using a single power driving scheme.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings.
The key idea of the invention is to design the driving circuit by utilizing the diode and the capacitor element and combining the working mode of the switching device of the main circuit, thereby skillfully providing a charging loop for the capacitor of the driving power supply and further reducing the requirement of isolating the driving power supply.
As shown in fig. 4a and fig. 4b, a single power supply driving circuit of a high-gain bidirectional direct current converter based on a switched capacitor network comprises a converter main circuit and a driving circuit, wherein the converter main circuit comprises N MOSFET power tubes S j (1.ltoreq.j.ltoreq.N) and N-1 direct current capacitors C k (1.ltoreq.k.ltoreq.N-1), the source electrodes and the drain electrodes of the N MOSFET power tubes are sequentially connected to form a series structure, and the working states of any adjacent MOSFET power tubes are complementary; any capacitor C k is respectively connected in parallel with the two ends (k is more than or equal to 1 and less than or equal to N-1) of the source electrode of the upper pipe S k+1 and the drain electrode of the lower pipe S k of the two series power pipes. According to the invention, a diode-capacitor circuit network is introduced, and a driving circuit is designed by combining a conducting channel of a power tube, so that single power supply of a plurality of power tubes is realized;
The specific single power supply driving circuit is mainly characterized in that:
The driving circuit comprises N driving chips, a DC-DC isolation power supply module, N voltage stabilizing capacitors C Pi (i is more than or equal to 1 and less than or equal to N) and N-1 diodes D i (i is more than or equal to 1 and less than or equal to N); the gate electrode output end v gi of each driving chip is respectively connected with the gate electrode (i is more than or equal to 1 and less than or equal to N) of the power tube S i through the driving resistor R g, the negative end v si of the driving voltage of the gate electrode of the driving chip is connected with the source electrode (i is more than or equal to 1 and less than or equal to N) of the power tube S i, and the direct current voltage stabilizing capacitor C Pi is connected between the positive end v di and the negative end v si (i is more than or equal to 1 and less than or equal to N) of the output side of the driving chip to provide driving voltage for the driving chip; the diode D j is connected between the positive ends v dj and v d（j+1） of the driving voltages of the two adjacent driving chips;
When the converter works normally, any two adjacent MOSFETs are complementarily conducted, and the converter comprises two working modes, namely, mode 1: ， At this time, S 1、S3、S5…Sj (j is odd) is on, S 2、S4、S6…Sk (k is even) is off and mode 2: ， at this time, S 1、S3、S5…Sj (j is odd) is turned off, and S 2、S4、S6…Sk (k is even) is turned on. When S 1 is turned on, C P1 charges the gate of S 1 via resistor R g and supplies power to the stabilizing capacitor C P2 of MOSFET driving chip #2 via diodes D 2 and S 1, At this time, S 2 is turned off, diode D 3 is turned off under the back pressure, S 3 is turned on, regulated capacitor C P3 supplies power to the gate of S 3 via R g, And charges the stabilizing capacitor C P4 of the driving chip #4 through the diodes D 4 and S 3, and so on. When S 1 is turned off, D 2 bears back pressure to turn off, S 2 is turned on, the voltage stabilizing capacitor C P2 charges the gate electrode of S 2 through the resistor R g, And power is supplied to the stabilizing capacitor C P3 of the driving chip #3 through the diodes D 3 and S 2, S 3 is turned off, Diode D 2 is subject to back-pressure cutoff, and so on. under two working modes of the driving circuit, the output capacitor C p1D2 of the isolation power supply skillfully and sequentially completes the power supply of the output side capacitor of the high-voltage side MOFET driving chip, and the single power supply of the multi-MOSFET serial structure is realized.
The voltage stress of diode D 2、D3…DN is capacitor C 1、C2…CN-1, respectively.
The bootstrap capacitor should provide sufficient gate charge to ensure that the MOSFET turns on quickly and maintain a sufficient gate turn-on voltage. The gate capacitance value satisfies:
(1)
Wherein: q g is MOSFET gate charge, V Cpk is driving capacitor voltage, ε max is the maximum capacitor voltage drop coefficient that is preset.
The invention also provides a control method of the circuit, which is shown in fig. 4a and 4b, and comprises the following specific steps:
Assume that the respective lift capacitance voltages in the initial timing driving circuit are zero. When the input PWM signal is logic 1 (pwm=1), all even power transistors are turned off. The MOSFET driving chip #1 outputs the reference high level provided by the isolated power supply, so S 1 turns on smoothly. The other odd power tubes cannot be turned on because the voltage on the corresponding bootstrap capacitor is zero. S 1 is conducted so that the source potential of the moment S 2 is equal to the source potential of the moment S 1, namely the negative end of the capacitor C P2 is equal to the negative end of the direct-current stabilizing capacitor C P1, so that the diode D 2 is conducted in a forward bias mode, the direct-current stabilizing capacitor C P1 rapidly charges the direct-current stabilizing capacitor C P2 to the voltage at the two ends of the C P2 to serve as an isolated power supply output voltage, and preparation is made for opening at the next moment S 2.
Thereafter, when the input PWM signal is logic 0 (pwm=0), all odd power transistors are turned off. Since C P2 takes the stored energy from C P1 and holds a certain voltage during pwm=1, S 2 can be smoothly turned on when the driving chip #2 outputs the reference high level. The other even power tubes cannot be conducted due to no voltage on the corresponding bootstrap capacitor. Similarly, S 2 is turned on to make the source potential of S 3 equal to S 2 at this time, that is, the negative terminal of the capacitor C P3 is equal to the negative terminal of the capacitor C P2, so D 3 is turned on by forward bias, and C P2 charges C P3 to the voltage of both capacitors equal, so as to provide a high-level turn-on voltage for the next time S 3. When the circuit reaches a steady state, the voltages output by the approximately isolated power supplies can be obtained on the respective lifting capacitors, so that the smooth on and off of the power MOSFETs can be ensured.
In steady state, the voltage of all bootstrap capacitors is approximately the voltage of the isolated power supply module. In the power stage circuit, the source electrode potential of all odd power tubes (S 1、S3 …) is fixed and unchanged, and the source electrode potential is the corresponding capacitor voltage in the main circuit; the source potentials of all even power transistors (S 2、S4 …) are floating and vary with the periodic switching of the circuit operating mode. When pwm=1, all odd power transistors are turned on, and the source potential of all even power transistors S k is equal to the source potential of the odd power transistor S k-1 in the lower adjacent stage, and the bootstrap capacitor C P(k-1) in the odd stage charges the bootstrap capacitor C P(k) in the upper adjacent stage. When pwm=0, all even power transistors are turned on, and the source potential of all even power transistors S k is equal to the source potential of its adjacent high-order odd power transistor S k+1, and the even-order bootstrap capacitor C P(k) charges the bootstrap capacitor C P(k+1) of the adjacent high-order.
The bootstrap capacitor should provide a sufficiently large gate charge Q g to ensure that the MOSFET turns on quickly and maintain a sufficiently high gate voltage to ensure that the MOSFET power transistor is in a conductive state. According to the working principle of the driving circuit, in the process of switching on the MOSFET power tube, the corresponding capacitor charges the gate electrode through the driving resistor, the capacitor voltage is reduced from V c_max to V c_min, when the MOSFET power tube is switched on, the gate electrode current is small, and the capacitor voltage is kept approximately constant. When the MOSFET power tube is turned off, the current capacitor is charged by the power supply and the previous stage capacitor.
In the actual circuit, in order to make the high-level output voltage of the driving chip stable and reliable, the voltage drop should be reduced as much as possible. Defining a voltage sag factorFor capacitive voltage dropRatio to the capacitance steady state voltage.
(2)
Capacitance dropThe gate charge Qg of the MOSFET satisfies:
(3)
and (3) combining the components (2) and (3), wherein the capacitance value satisfies the following conditions:
(4)
Wherein: epsilon max is the preset maximum capacitance voltage drop coefficient.
In order to verify the novel single power supply driving circuit and theoretical analysis, a design example is provided.
The driving circuit is shown in FIG. 4a, the main circuit is shown in FIG. 1c, and the parameters are as follows ：vin=50V, Po=500W, vo=400V, fs=100kHz, vCP1=12V, L=100uH, Lf=1mH, C1=C2=50uF, Co=50uF, RL=320Ω.
Fig. 5 a-5 f show a single power supply driving circuit according to the present invention, in which the driving voltage v Gs1,vGs2,vGs3, the diode voltage v D2,vD3,vGs3 and the capacitor voltage v CP2 of each MOSFET are used, so that a single power supply can effectively provide stable driving voltages for a plurality of MOSFET power devices and ensure reliable turn-on and turn-off of the MOSFET power devices.
Fig. 6 a-6 d show the main circuit inductor current, MOSFET switching voltage, current and output voltage waveforms using the single power supply drive circuit of the present invention.
Fig. 7 a-7 b show experimental waveforms for the main circuit vin=48V, vo=200V, fs=100kHz, vCP1=12V, L=1mH, Lf=5mH, C1=C2=50uF, Co=50uF, RL=100Ω of fig. 1c operating in the operating mode. Simulation and experimental results are substantially consistent with theoretical analysis.
The isolated power supply occupies a major portion of the cost and bulk of the power device drive board. The invention discloses a single power supply driving circuit design method suitable for a switched capacitor network high-gain direct current converter, which effectively simplifies the design of a driving circuit and the requirement of power supply isolation, and is particularly beneficial to reducing the cost of driving board devices and improving the power density under the condition of more switching devices in a main circuit.
Finally, it should be noted that the above examples are only for illustrating the technical solution of the present invention, and are not limited to the embodiments. It will be apparent to those skilled in the art that various other changes and modifications can be made in the foregoing without departing from the spirit or scope of the invention, and it is intended that all such changes and modifications fall within the scope of the invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (3)
1. A single power supply integrated drive circuit of a switch capacitor bidirectional DC converter is characterized by comprising a converter main circuit and a drive circuit,
The converter main circuit comprises N power tubes S j and N-1 direct current capacitors C k, wherein j is more than or equal to 1 and less than or equal to N, k is more than or equal to 1 and less than or equal to N-1, the source electrodes and the drain electrodes of the N power tubes are sequentially connected to form a series structure, and the working states of any adjacent power tubes are complementary; any capacitor C k is respectively connected in parallel with the two ends of the source electrode of the upper pipe S k+1 and the drain electrode of the lower pipe S k of two adjacent power pipes which are connected in series, and k is more than or equal to 1 and less than or equal to N-1;
The driving circuit comprises N driving chips, a DC-DC isolation power supply module, N voltage stabilizing capacitors C Pi and N-1 diodes D i, wherein i is more than or equal to 1 and less than or equal to N; the output end v gi of each driving chip is connected with the gate electrode of the power tube S i through a resistor R g respectively, the negative end v si of the driving voltage of the driving chip is connected with the source electrode of the power tube S i, and the direct-current voltage stabilizing capacitor C Pi is connected between the positive end v di and the negative end v si of the driving voltage of the driving chip; the diode D j is connected between the positive voltage ends v dj and v d（j+1） of the two adjacent driving chips;
The voltage stress of the diode D 2、D3…DN is the capacitor C 1、C2…CN-1 respectively;
the gate electrode capacitance of the bootstrap capacitor has the following values:
Wherein: q g is the gate charge of the power tube, V Cpk is the driving capacitor voltage, and ε max is the preset maximum capacitor voltage drop coefficient.
2. A method of controlling a single power integrated drive circuit for a switched capacitor bi-directional dc converter as claimed in claim 1, comprising the steps of:
When the converter works normally, any two adjacent power tubes are complementarily conducted, and two working modes are included:
Mode 1: odd power tubes S 1、S3、S5…Sj are turned on, j is an odd number, even power tubes S 2、S4、S6…Sk are turned off, and k is an even number;
Mode 2: the power tube S 1、S3、S5…Sj is turned off, and j is an odd number; the power tube S 2、S4、S6…Sk is turned on, and k is an even number;
When the power tube S 1 is turned on, the DC voltage stabilizing capacitor C P1 charges the gate of the power tube S 1 through the resistor R g, And the second driving chip direct current voltage stabilizing capacitor C P2 is supplied with power through the diode D 2 and the power tube S 1, at the moment, the power tube S 2 is turned off, Diode D 3 bears back pressure to cut off, power tube S 3 is turned on, DC voltage stabilizing capacitor C P3 supplies power to the gate electrode of power tube S 3 through resistor R g, The fourth driving chip voltage stabilizing capacitor C P4 is charged through the diode D 4 and the power tube S 3, and so on; When the power tube S 1 is turned off, the diode D 2 is turned off under the back pressure, the power tube S 2 is turned on, the DC voltage stabilizing capacitor C P2 charges the gate electrode of the power tube S 2 through the resistor R g, And power is supplied to the third driving chip stabilizing capacitor C P3 through the diode D 3 and the power tube S 2, S 3 is turned off, Diode D 2 is subject to back-pressure cutoff, and so on.
3. The method for controlling a single power integrated driving circuit of a switched capacitor bi-directional dc converter according to claim 2, comprising the specific steps of:
when PWM=1 is input, all even power tubes are turned off, the first driving chip outputs reference high level and is provided by an isolation power supply, and the power tubes S 1 are smoothly turned on; the other odd power tubes cannot be turned on because the voltage on the corresponding bootstrap capacitor is zero; the power transistor S 1 is turned on such that at this point the source potential of the power transistor S 2 is equal to the source potential of the power transistor S 1, so the diode D 2 is forward biased on, The direct-current voltage-stabilizing capacitor C P1 charges the direct-current voltage-stabilizing capacitor C P2 rapidly until the voltage at two ends of the direct-current voltage-stabilizing capacitor C P2 is the output voltage of the isolated power supply, so as to prepare for the turn-on of the power tube S 2 at the next moment; then, when pwm=0 is input, all odd power transistors are turned off, since the dc voltage stabilizing capacitor C P2 obtains energy stored from the dc voltage stabilizing capacitor C P1 and maintains a certain voltage during pwm=1, the second driving chip smoothly turns on the power transistor S 2 when outputting a reference high level, The rest even power tubes cannot be conducted due to no voltage on the corresponding bootstrap capacitor, the power tube S 2 is conducted so that the source electrode potential of the power tube S 3 is equal to that of the power tube S 2 at the moment, therefore, the diode D 3 is conducted in a forward bias way, The direct-current voltage stabilizing capacitor C P2 charges the direct-current voltage stabilizing capacitor C P3 until the voltages of the two capacitors are equal, and provides high-level starting voltage for the power tube S 3 at the next moment; Repeating the steps, and when the circuit reaches a steady state, obtaining voltages which are approximately isolated from the power supply output on the capacitors respectively;
In steady state, the voltages of all bootstrap capacitors are approximate to the voltages of the isolated power supply modules, and in the power stage circuit, the source electrode potentials of all odd power tubes are fixed and unchanged and become the corresponding capacitor voltages in the main circuit; the source electrode potential of all even power tubes is floating and changes along with the periodic switching of the circuit working mode; when pwm=1, all odd power transistors are turned on, the source potential of all even power transistors S k is equal to the source potential of the odd power transistor S k-1 in the lower adjacent position, and the bootstrap capacitor C P(k-1) in the odd position charges the bootstrap capacitor C P(k) in the upper adjacent position; when pwm=0, all even power transistors are turned on, and the source potential of all even power transistors S k is equal to the source potential of its adjacent high-order odd power transistor S k+1, and the even-order bootstrap capacitor C P(k) charges the bootstrap capacitor C P(k+1) of the adjacent high-order.
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