CN107946718A - Microwave high power synthesizer - Google Patents
Microwave high power synthesizer Download PDFInfo
- Publication number
- CN107946718A CN107946718A CN201711173293.3A CN201711173293A CN107946718A CN 107946718 A CN107946718 A CN 107946718A CN 201711173293 A CN201711173293 A CN 201711173293A CN 107946718 A CN107946718 A CN 107946718A
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- China
- Prior art keywords
- inner wire
- probe
- outer conductor
- connector
- high power
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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- Plasma Technology (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
A kind of microwave high power synthesizer disclosed by the invention, it is desirable to provide one kind possesses under low-frequency range work, small and being capable of the powerful power combiner of input and output.The technical scheme is that：In the center of the outer conductor (1) of square hollow metal, inner wire (2) equipped with a circular hollow metal, inner wire (2) is quarter-wave, and the ratio between outside diameter of the interior length of side of outer conductor (1) and inner wire (2) is 1.74 ± 0.1, outer conductor (1) and inner wire (2) length ratio >=2.11, the ratio between the probe diameter of out connector (4) and inner wire (2) outside diameter are 0.40 0.42；Inner wire (2) top is connected using welding procedure with the probe of input connector (3), inner wire (2) bottom is connected using welding procedure with the probe of out connector (4), electric field signal direct-coupling, energy are transmitted by the probe of input connector (3) and the probe of out connector (4) in the resonant cavity structure being made of outer conductor (1) and inner wire (2) in the form of quasi- TEM moulds.
Description
Technical field
The present invention relates to the microwave high power synthesizer that a kind of output power reaches 1000W, belongs to microwave power synthesis field.
Background technology
In recent years, the application of High-Power Microwave is varied：Satellite and space platform energy supply, deep space probe observing and controlling are led to
Letter, orbiter Level Change propulsion system etc., no matter any application is required for great power to support.With semiconductor
The continuous development of material and technique, the output power magnitude of microwave device is increasing, and the pulse power of L-band transistor has reached
Kilowatt magnitude, X-band arsenic potassium field-effect tube continuous wave reach tens watts, and pulse power reaches 500W.Although high power device
Working frequency and the attainable power of institute it is higher and higher, but be limited to the physical characteristic and technological level of device, single work(
The output power put is still limited, and in most cases we are taken the power input of multiple power amplifiers to power combing at this time
Device carries out the high power that power combing reaches our needs.
Conventional Wilkinson structures synthesizer is synthesized suitable for small-power, is commonly used in the circuit of single power amplifier and is realized
Power combing, its output power is in tens magnitude；In recent years find there is paper to describe using coaxial probe battle array coupled structure
Power combiner, since it uses Air Coupling form, power bearing ability is also very limited, and is occurred when matching bad serious
Fever so as to reducing its reliability, and volume is big；, should although classical waveguiding structure synthesizer can bear high power
Structure is very big in low-frequency range volume, is not easy to install and uses, it is more suitable for the high power synthesis of upper frequency.
In general, power synthesizer design it should be noted that it is following some：1st, power synthesizer has low-loss, is closed with improving
Into efficiency；2nd, power synthesizer does not change reliability, stability and the characteristics of signals of input power amplifier；3rd, power synthesizer
Input/output terminal has low voltage standing wave ratio.
The content of the invention
In place of in view of the shortcomings of the prior art, there is provided one kind possesses under low-frequency range work,
It is small and being capable of the powerful power combiner of input and output.
Above-mentioned purpose of the present invention can be achieved by scheme introduced below, a kind of microwave high power synthesizer, including：
Square hollow metal outer conductor 1, it is characterised in that：In the center of the outer conductor 1 of the square hollow metal, equipped with one
The inner wire 2 of circular hollow metal, inner wire 2 are quarter-wave, and the interior length of side of outer conductor 1 and inner wire 2 is outer
The ratio between footpath is 1.74 ± 0.1, outer conductor 1 and 2 length ratio >=2.11 of inner wire, 2 bottom of inner wire center and out connector 4
Probe be weldingly connected, the ring flange of out connector 4 is using welding procedure by an end seal of square hollow metal outer conductor
Close, and it is 0.30-0.32 to export connection 4 probe lengths and 2 length ratio of inner wire, the probe diameter of out connector 4 with it is interior
The ratio between 2 outside diameter of conductor is 0.40-0.42；The outer surface on 2 top of inner wire utilizes welding procedure and the probe phase of input connector 3
Even, the probe of input connector 3 and the probe of out connector be by electric field signal direct-coupling, and energy is by outer conductor 1 and interior
It is transmitted in the resonant cavity structure that conductor 2 is formed in the form of quasi- TEM moulds.
The present invention has the advantages that compared with the prior art.
It is small：The power combiner is come out electric field signal direct-coupling using the probe of input, out connector, is not had
There is the impedance transformer of traditional sense, and reduce quarter-wave size, 19mm- is reduced in each port of S frequency ranges
38mm.Same high-power of same frequency, volume is 1/5th of radial direction power synthesizer, with waveguide power synthesizer phase
It is even more to be far smaller than its volume than this power combiner.
It is high-power：There is no isolation resistance between each input terminal of the power combiner, and isolation resistance is to limit input to hold
By the principal element of power, energy passes through detecting probe surface by input terminal, resonance and is coupled in the form of quasi- TEM moulds in the cavity
To output terminal, therefore possess high power characteristics, in test reach the power amplifier of 3 500W through this power combiner output power
1000W。
Cost is low：The present invention is a using a square hollow metallic conductor, a circular tubular metal conductor, 2-4
Input connector, an out connector form a power synthesizer.Its composition form is simple, without particular device, nothing
Special processing process is needed to may make up a power synthesizer.
The present invention is suitable for microwave L, S, C-band microwave high power synthesizer.
Brief description of the drawings
Fig. 1 is the top view of microwave high power synthesizer of the present invention.
Fig. 2 is the sectional view of microwave high power synthesizer of the present invention.
In figure：1-outer conductor, 2-inner wire, the probe of 3-input connector, the probe of 4-out connector
Below in conjunction with the accompanying drawings and instantiation, the present invention is furture elucidated, it should be understood that these examples be merely to illustrate the present invention and
It is not used in and limits the scope of the invention, after the present invention is read, those skilled in the art is to various equivalents of the invention
Modification belongs to appended claims limited range of the present invention.
Embodiment
In Fig. 1, outer conductor 1 is that a kind of square hollow rustproof aluminum alloy or bar section of stainless steel, inner wire 2 are a kind of circulars
Hollow copper conductor, the ratio between the interior length of side of outer conductor 1 and the outside diameter of inner wire 2 are 1.74 ± 0.1, outer conductor 1 and 2 length of inner wire
The ratio between be not less than 2.11, inner wire 2 is quarter-wave, is tended to by the power bearing ability for emulating the size lower chamber
Maximum, and volume is 1/5th or smaller of conventional power synthesizer, its maximum Insertion Loss is only 0.3dB.2 top of inner wire
Outer surface be connected using welding procedure with the probe of input connector 3, the probe of input connector 3 and out connector 4
Probe is by electric field signal direct-coupling, and energy is in the resonant cavity structure being made of outer conductor 1 and inner wire 2 with quasi- TEM moulds
Form be transmitted.The ring flange of input connector 3 is installed on 1 outer surface of circular hollow metal outer conductor.Outer conductor 1
There are four faces in outer surface, and any two face installation input connector 3, is known as 2 road power synthesizers, any three faces installation input
Connector 3, is known as 3 road power synthesizers, and input connector 3 is all installed at four sides, is known as 4 road power synthesizers.Input connects
Connect top of the probe of device 3 by welding with inner wire 2 to be connected as a single entity, the probe diameter of input connector 3 is led with interior
The ratio between outside diameter of body 2 is 0.17-0.19, its input vswr is 1.3-1.4.Input connector 3 is N Connector, its flange
Disk is fixed on the lateral surface of outer conductor 1 by way of spiral shell dress.The present embodiment input connector has 3, is the high-power synthesis in 3 tunnels
Device.
In fig. 2, out connector 4 is L29 types or N-type radio frequency connector, and the probe diameter of out connector 4 is led with interior
The ratio between 2 outside diameter of body is 0.40-0.42, and probe length and 2 length ratio of inner wire are 0.30-0.32, its output VSWR is
1.1-1.3.The ring flange of out connector 4 is connected as a single entity with the bottom of outer conductor by welding, out connector 4
Probe is located at the center of outer conductor 1 and is connected as a single entity with the bottom of inner wire 2 by welding.
Claims (9)
1. a kind of microwave high power synthesizer, including：The outer conductor (1) of square hollow metal, it is characterised in that：It is described just
The center of the outer conductor (1) of square hollow metal, the inner wire (2) equipped with a circular hollow metal, inner wire (2) are four
/ mono- wavelength, and the ratio between outside diameter of the interior length of side of outer conductor (1) and inner wire (2) is 1.74 ± 0.1, outer conductor (1) with it is interior
Conductor (2) length ratio >=2.11, the bottom center of inner wire (2) are connected with the probe of out connector (4), out connector
(4) ring flange utilizes welding procedure by the bottom end closure of square hollow metal outer conductor, and exports connection (4) probe length
It is 0.30-0.32 with inner wire (2) length ratio, the ratio between the probe diameter of out connector (4) and inner wire (2) outside diameter are
0.40-0.42；The outer surface of inner wire (2) second end is connected using welding procedure with the probe of input connector (3), and input connects
The probe of device (3) and the probe of out connector (4) are connect by electric field signal direct-coupling, energy by outer conductor (1) and interior is being led
It is transmitted in the resonant cavity structure that body (2) is formed in the form of quasi- TEM moulds.
2. microwave high power synthesizer as claimed in claim 1, it is characterised in that：The ring flange installation of input connector (3)
In outer conductor (1) outer surface that circular hollow metal is formed.
3. microwave high power synthesizer as claimed in claim 1, it is characterised in that：There are four faces in the outer surface of outer conductor (1),
Any two face installation input connector (3), is known as 2 road power synthesizers, any three faces installation input connector (3), claims
For 3 road power synthesizers, input connector (3) is all installed at four sides, is known as 4 road power synthesizers.
4. microwave high power synthesizer as claimed in claim 1, it is characterised in that：The probe of input connector (3) passes through weldering
The mode connect and the top of inner wire (2) are connected as a single entity.
5. microwave high power synthesizer as claimed in claim 1, it is characterised in that：The probe diameter of input connector (3) with
The ratio between outside diameter of inner wire (2) is 0.17-0.19, its input vswr is 1.3-1.4.
6. microwave high power synthesizer as claimed in claim 1, it is characterised in that：Input connector (3) is N-type radio frequency connection
Device, its ring flange are fixed on the lateral surface of outer conductor (1) by way of spiral shell dress.
7. microwave high power synthesizer as claimed in claim 1, it is characterised in that：Out connector (4) is L29 types or N-type
Radio frequency connector.
8. the microwave high power synthesizer described in claim 1, it is characterised in that：The probe diameter of out connector (4) with it is interior
The ratio between conductor (2) outside diameter is 0.40-0.42, and probe length and inner wire (2) length ratio are 0.30-0.32, it exports standing wave
Than for 1.1-1.3.
9. microwave high power synthesizer as claimed in claim 1, it is characterised in that：The ring flange of out connector (4) passes through
The mode of welding and the bottom of outer conductor are connected as a single entity, the probe of out connector (4) be located at the center of outer conductor (1) with
The bottom of inner wire (2) is connected as a single entity by welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711173293.3A CN107946718B (en) | 2017-11-22 | 2017-11-22 | Microwave high-power synthesizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711173293.3A CN107946718B (en) | 2017-11-22 | 2017-11-22 | Microwave high-power synthesizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107946718A true CN107946718A (en) | 2018-04-20 |
| CN107946718B CN107946718B (en) | 2020-03-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201711173293.3A Active CN107946718B (en) | 2017-11-22 | 2017-11-22 | Microwave high-power synthesizer |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0455485A3 (en) * | 1990-05-02 | 1992-10-14 | Raytheon Company | Spatial field power combiner |
| CN102637937A (en) * | 2012-04-25 | 2012-08-15 | 南京广顺微波技术有限公司 | Retracted integral power distributor |
| CN202977681U (en) * | 2012-12-28 | 2013-06-05 | 中国电子科技集团公司第五十四研究所 | High-efficiency power combiner |
| US20160141742A1 (en) * | 2014-11-17 | 2016-05-19 | City University Of Hong Kong | N-way coaxial waveguide power divider/combiner |
| CN205609721U (en) * | 2016-05-11 | 2016-09-28 | 江苏尚瑞通信科技有限公司 | Ware is divided to low -loss " n " shape cavity merit |
| CN206194933U (en) * | 2016-12-02 | 2017-05-24 | 中国船舶重工集团公司第七二四研究所 | Can dismantle multichannel high power waveguide synthesizer |
-
2017
- 2017-11-22 CN CN201711173293.3A patent/CN107946718B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0455485A3 (en) * | 1990-05-02 | 1992-10-14 | Raytheon Company | Spatial field power combiner |
| CN102637937A (en) * | 2012-04-25 | 2012-08-15 | 南京广顺微波技术有限公司 | Retracted integral power distributor |
| CN202977681U (en) * | 2012-12-28 | 2013-06-05 | 中国电子科技集团公司第五十四研究所 | High-efficiency power combiner |
| US20160141742A1 (en) * | 2014-11-17 | 2016-05-19 | City University Of Hong Kong | N-way coaxial waveguide power divider/combiner |
| CN205609721U (en) * | 2016-05-11 | 2016-09-28 | 江苏尚瑞通信科技有限公司 | Ware is divided to low -loss " n " shape cavity merit |
| CN206194933U (en) * | 2016-12-02 | 2017-05-24 | 中国船舶重工集团公司第七二四研究所 | Can dismantle multichannel high power waveguide synthesizer |
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| CN107946718B (en) | 2020-03-31 |
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