CN107946377A - A kind of patch type infrared reception pipe - Google Patents
A kind of patch type infrared reception pipe Download PDFInfo
- Publication number
- CN107946377A CN107946377A CN201711176666.2A CN201711176666A CN107946377A CN 107946377 A CN107946377 A CN 107946377A CN 201711176666 A CN201711176666 A CN 201711176666A CN 107946377 A CN107946377 A CN 107946377A
- Authority
- CN
- China
- Prior art keywords
- metallic support
- packing colloid
- weld part
- patch type
- infrared receiver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000084 colloidal system Substances 0.000 claims abstract description 48
- 238000012856 packing Methods 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005452 bending Methods 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Radiation-Therapy Devices (AREA)
Abstract
The present invention is suitable for technical field of semiconductor encapsulation, there is provided a kind of patch type infrared reception pipe.The infrared receiver tube includes packing colloid, first metallic support, second metallic support and infrared receiver chip, infrared receiver chip package is in packing colloid, one of electrode of infrared receiver chip is electrically connected on the first metallic support, another electrode is electrically connected by conducting wire and the second metallic support, first metallic support and the second metallic support are spaced, one end of first metallic support and the second metallic support is all packaged in packing colloid, the other end all exposes outside packing colloid, and the bottom surface of packing colloid is extended to from the bending of the side of packing colloid, first metallic support and the second metallic support all form the first weld part in the side of packing colloid, and all the second weld part is formed in the bottom of packing colloid.The present invention has the advantages that production efficiency height, good heat dissipation effect and versatile.
Description
Technical field
The invention belongs to technical field of semiconductor encapsulation, more particularly to a kind of patch type infrared reception pipe.
Background technology
Infrared receiver tube is the semiconductor devices that infrared ray signal is become to electric signal, its core component is one
The PN junction of special material, is compared with general-purpose diode, big change is taken in structure, infrared receiver tube is for bigger face
Long-pending reception enters, and electric current then increases therewith.Existing LED (Light-Emitting Diode light emitting diodes) infrared receiver tube
Predominantly tradition DIP (dual inline-pin package dual-inline packages) plug-in type LED infrared receiving tubes, it is lacked
Point is that non-refractory, volume are big；Cannot general SMT (Surface Mount Technology surface mounts in practical application
Technology) technique productions, production efficiency is relatively low.
The content of the invention
Technical problem to be solved of the embodiment of the present invention is to provide a kind of patch type infrared receiving tube, it is intended to existing skill
The problem of low production efficiency existing for plug-in type LED infrared receiving tubes in art and poor universality.
The embodiment of the present invention, which is achieved in that, provides a kind of patch type infrared reception pipe, it includes packing colloid, the
One metallic support, the second metallic support and infrared receiver chip, infrared receiver chip package in the packing colloid,
One of electrode of the infrared receiver chip is electrically connected on first metallic support, another electrode is by leading
Line is electrically connected with second metallic support, and first metallic support and the second metallic support are spaced, and described first
One end of metallic support and the second metallic support is all packaged in the packing colloid, and the other end all exposes the packing colloid
Outside, and from the bending of the side of the packing colloid extend to the bottom surface of the packing colloid, first metallic support with it is described
Second metallic support all forms the first weld part in the side of the packing colloid, and all in the bottom shape of the packing colloid
Into the second weld part.
Further, first weld part is protruded from or maintained an equal level in the side of the packing colloid, second welding
Portion protrudes from or maintains an equal level in the bottom surface of the packing colloid.
Further, packing colloid includes integrally formed plinth and semiellipse bulb, the infrared receiver core
Piece is located in the semiellipse bulb, and the both sides of the semiellipse bulb are planar portions, the planar portions and the plinth
Side maintain an equal level, first weld part is protruded from or maintained an equal level and protrudes from or maintain an equal level in the planar portions, second weld part
In the bottom surface of the plinth.
Further, there is holding part, second welding position is at the holding part on the plinth.
Further, the area of first metallic support is bigger than the area of second metallic support, described infrared to connect
Chip is received to be fixedly arranged on first metallic support.
Further, first metallic support on second metallic support with offering through hole.
Compared with prior art, beneficial effect is the embodiment of the present invention：The present invention is by by the first metallic support and the
One end of two metallic supports is encapsulated in packing colloid, and one end of the first metallic support and the second metallic support is passed through curved
Folding, from extending sideways to its bottom surface for packing colloid so that the first metallic support and the second metallic support are all in packing colloid
Side forms the first weld part, and all forms the second weld part in the bottom surface of packing colloid, so as to pass through the first weld part
Side is affixed on wiring board, can also be stood and is affixed on wiring board by the second weld part, meets two kinds of SMT production technologies of side patch and vertical patch
Demand, it has the advantages that production efficiency is high and versatile.
Brief description of the drawings
Fig. 1 is patch type infrared receiving tube structure diagram provided in an embodiment of the present invention；
Fig. 2 is the patch type infrared receiving tube main structure diagram shown in Fig. 1；
Fig. 3 is the left view structural representation of Fig. 2；
Fig. 4 is the main view cutting structure diagram of Fig. 2；
Fig. 5 is the vertical view cutting structure diagram of Fig. 2.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
As shown in Figures 1 to 5, it is a kind of patch type infrared receiving tube of inventive embodiments offer.The patch type is infrared to be connect
Closed tube includes packing colloid 1, the first metallic support 2, the second metallic support 3 and infrared receiver chip 4, infrared receiver core
Piece 4 is packaged in packing colloid 1, and one of electrode of infrared receiver chip 4 is electrically connected on the first metallic support 2,
Another electrode is electrically connected by conducting wire 5 and the second metallic support 3, and the first metallic support 2 and the second metallic support 3 are mutual
Every so that infrared receiver chip 4, the first metallic support 2 and the second metallic support 3 form conductive path.First metallic support 2
All it is packaged in packing colloid 1 with one end of the second metallic support 3, the other end all exposes outside packing colloid 1, and from packing colloid
1 side extends to the bottom surface of packing colloid 1 by twice bended, and the first metallic support 2 is all being encapsulated with the second metallic support 3
The side of colloid 1 forms the first weld part 6, and all forms the second weld part 7 in the bottom of packing colloid 1, so as to incite somebody to action
First weld part 6 is mounted on wiring board from side, or the second weld part 7 is mounted on wiring board from bottom surface.When first
When weld part 6 is mounted on wiring board, it can be radiated by the second weld part 7, when the second weld part 7 is mounted on wiring board
When, it can be radiated by the first weld part 6, its good heat dissipation effect, and manufacture craft is simple.
In above-described embodiment, the first weld part 6 is protruded from or maintained an equal level to be protruded in the side of packing colloid 1, the second weld part 7
In or maintain an equal level in the bottom surface of packing colloid 1, specifically, packing colloid 1 includes integrally formed plinth 11 and semiellipse ball
First 12, infrared receiver chip 4 is located in semiellipse bulb 12, easy to carry out optically focused to infrared receiver chip 4.Semiellipse bulb
12 both sides are planar portions 120, and planar portions 120 and the side of plinth 11 maintain an equal level, easy to by patch type infrared receiving tube side
Face paste fills.First weld part 6 is protruded from or maintained an equal level and protrudes from or maintain an equal level in plinth 11 in planar portions 120, the second weld part 7
Bottom surface, easy to the attachment of the first weld part 6 and the second weld part 7.
In above-described embodiment, plinth 11 can be easy to stably place be welded on wiring board, the plinth 11
Upper to have holding part 110, the second weld part 7 is located at holding part 110.The area of first metallic support 2 is than the second metallic support 3
Area it is big, be fixedly arranged on easy to large area infrared receiver chip 4 on the first metallic support 2, it is more to be conducive to infrared receiver chip 4
Greater area of reception incident ray, the current signal for making to be transformed into increase.In addition, in the first metallic support 2 and the second metal
Through hole 8 is offered on stent 3, enhancing packing colloid 1 is engaged the fastness of the first metallic support 2 and the second metallic support 3, protects
Demonstrate,prove overall stability.
In conclusion the patch type infrared receiving tube of the present invention is all existed by the first metallic support 2 and the second metallic support 3
The side of packing colloid 1 forms the first weld part 6, and all forms the second weld part 7 in the bottom surface of packing colloid 1, so as to
It is affixed on wiring board by 6 side of the first weld part, or is affixed on by the way that the second weld part 7 is vertical on wiring board, is met side patch and stand
Two kinds of SMT production technology demands are pasted, it has the advantages that, and production efficiency is high, versatile, small and good heat dissipation effect.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (6)
- A kind of 1. patch type infrared reception pipe, it is characterised in that：Including packing colloid, the first metallic support, the second metal branch Frame and infrared receiver chip, infrared receiver chip package in the packing colloid, the infrared receiver chip its In an electrode be electrically connected on first metallic support, another electrode passes through conducting wire and second metallic support It is electrically connected, first metallic support and the second metallic support are spaced, first metallic support and the second metal branch One end of frame is all packaged in the packing colloid, and the other end all exposes outside the packing colloid, and from the packing colloid Side bends the bottom surface for extending to the packing colloid, and first metallic support is with second metallic support all in the envelope The side for filling colloid forms the first weld part, and all forms the second weld part in the bottom of the packing colloid.
- 2. patch type infrared reception pipe as claimed in claim 1, it is characterised in that first weld part is protruded from or held Put down and protrude from or maintain an equal level in the bottom surface of the packing colloid in the side of the packing colloid, second weld part.
- 3. patch type infrared reception pipe as claimed in claim 2, it is characterised in that packing colloid includes integrally formed side Shape base and semiellipse bulb, the infrared receiver chip are located in the semiellipse bulb, and the two of the semiellipse bulb Side is planar portions, and the planar portions and the side of the plinth maintain an equal level, and first weld part is protruded from or maintained an equal level in institute Planar portions are stated, second weld part is protruded from or maintained an equal level in the bottom surface of the plinth.
- 4. patch type infrared reception pipe as claimed in claim 3, it is characterised in that have on the plinth accommodating Portion, second welding position is at the holding part.
- 5. patch type infrared reception pipe as claimed in claim 1, it is characterised in that the area ratio of first metallic support The area of second metallic support is big, and the infrared receiver chip is fixedly arranged on first metallic support.
- 6. the patch type infrared reception pipe as described in any one in claim 1 to 5, it is characterised in that first gold medal Belong to stent with offering through hole on second metallic support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711176666.2A CN107946377A (en) | 2017-11-22 | 2017-11-22 | A kind of patch type infrared reception pipe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711176666.2A CN107946377A (en) | 2017-11-22 | 2017-11-22 | A kind of patch type infrared reception pipe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107946377A true CN107946377A (en) | 2018-04-20 |
Family
ID=61929833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711176666.2A Pending CN107946377A (en) | 2017-11-22 | 2017-11-22 | A kind of patch type infrared reception pipe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107946377A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1292154A (en) * | 1998-06-30 | 2001-04-18 | 奥斯兰姆奥普托半导体股份有限两合公司 | Radiation-emitting and/or-receiving component |
| WO2005064696A1 (en) * | 2003-12-30 | 2005-07-14 | Osram Opto Semiconductors Gmbh | Radiation-emitting and/or radiation-receiving semiconductor component and method for the production thereof |
| CN103759228A (en) * | 2014-01-07 | 2014-04-30 | 江苏新广联科技股份有限公司 | Surface-mount Piranha LED lamp |
| CN205960021U (en) * | 2016-07-29 | 2017-02-15 | 佛山市国星光电股份有限公司 | Novel CHIPLED device |
| CN206116457U (en) * | 2016-10-31 | 2017-04-19 | 深圳成光兴光电技术股份有限公司 | High -efficient radiating edible mermaid LED |
| CN106935663A (en) * | 2017-02-24 | 2017-07-07 | 江苏欧密格光电科技股份有限公司 | A kind of paster infrared receiving terminal |
| CN107170838A (en) * | 2017-05-26 | 2017-09-15 | 深圳成光兴光电技术股份有限公司 | A kind of patch type infrared reception device |
| CN208173598U (en) * | 2017-11-22 | 2018-11-30 | 深圳成光兴光电技术股份有限公司 | A kind of patch type infrared reception pipe |
-
2017
- 2017-11-22 CN CN201711176666.2A patent/CN107946377A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1292154A (en) * | 1998-06-30 | 2001-04-18 | 奥斯兰姆奥普托半导体股份有限两合公司 | Radiation-emitting and/or-receiving component |
| WO2005064696A1 (en) * | 2003-12-30 | 2005-07-14 | Osram Opto Semiconductors Gmbh | Radiation-emitting and/or radiation-receiving semiconductor component and method for the production thereof |
| CN103759228A (en) * | 2014-01-07 | 2014-04-30 | 江苏新广联科技股份有限公司 | Surface-mount Piranha LED lamp |
| CN205960021U (en) * | 2016-07-29 | 2017-02-15 | 佛山市国星光电股份有限公司 | Novel CHIPLED device |
| CN206116457U (en) * | 2016-10-31 | 2017-04-19 | 深圳成光兴光电技术股份有限公司 | High -efficient radiating edible mermaid LED |
| CN106935663A (en) * | 2017-02-24 | 2017-07-07 | 江苏欧密格光电科技股份有限公司 | A kind of paster infrared receiving terminal |
| CN107170838A (en) * | 2017-05-26 | 2017-09-15 | 深圳成光兴光电技术股份有限公司 | A kind of patch type infrared reception device |
| CN208173598U (en) * | 2017-11-22 | 2018-11-30 | 深圳成光兴光电技术股份有限公司 | A kind of patch type infrared reception pipe |
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| PB01 | Publication | ||
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