CN107943353A - Electronic device and its driving method - Google Patents

Electronic device and its driving method Download PDF

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Publication number
CN107943353A
CN107943353A CN201610892579.6A CN201610892579A CN107943353A CN 107943353 A CN107943353 A CN 107943353A CN 201610892579 A CN201610892579 A CN 201610892579A CN 107943353 A CN107943353 A CN 107943353A
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China
Prior art keywords
transistor
charge
scan line
discharge device
electronic device
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CN201610892579.6A
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CN107943353B (en
Inventor
戴亚翔
张君毅
邱韦嘉
萧培宏
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FocalTech Systems Ltd
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FocalTech Systems Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04108Touchless 2D- digitiser, i.e. digitiser detecting the X/Y position of the input means, finger or stylus, also when it does not touch, but is proximate to the digitiser's interaction surface without distance measurement in the Z direction

Abstract

The present invention proposes a kind of electronic device and its driving method, it includes one first scan line, one second scan line, one first data cable, a sense wire, a first transistor, a pixel, a second transistor, a charge and discharge device.The first transistor is connected to first scan line and first data cable.There is pixel a pixel electrode to be connected to the first transistor.Second transistor is connected to first scan line, the community electrode of pixel and sense wire.Charge and discharge device is coupled to the second transistor, the second scan line and sense wire.When first scan line is high potential, which is electrically charged, and when second scan line is high potential, which senses the electric current of the charge and discharge device, to determine whether the touching of a foreign object or close.

Description

Electronic device and its driving method
Technical field
The present invention relates to the technical field of touch control detection, particularly relate to it is a kind of using charge share to carry out touch control detection Electronic device.
Background technology
The technical principle of contact panel be when finger or other media contacts are to screen, according to different induction modes, with Voltage, electric current, sound wave or infrared ray etc. are detected, and then measures the coordinate position of touch point.Such as electric resistance touch-control panel is Using upper and lower interelectrode potential difference, to calculate compression point position come where detecting touch point.Capacitance type touch-control panel is Using capacitance variations caused by the electrostatical binding between the transparency electrode and human body of arrangement, come from caused curtage Detect its coordinate.
According to for capacitance touching control technical principle, it can be divided into surface-type capacitance touching control sensing (Surface ) and projecting type capacitor touch-control sensing (Projected Capacitive) both technologies Capacitive.Surface-type capacitive touch Though controlling detection technology framework simple structure, it is not easy to realize multi-point touch and more difficult overcomes electromagnetic interference (Electromagnetic Interference, EMI) and the problem of interrogating of making an uproar so that now mostly towards projected capacitive touch Detection technology develops.
Projecting type capacitor touch-control sensing (Projected Capacitive) technology can be divided into self-induction capacitor type (Self again ) and Inductance and Capacitance type (Mutual capacitance) capacitance.Self-induction capacitor type refers to produce between touch control object and conductor lines Raw capacitive coupling, and the capacitance variations of conductor lines are measured, to determine touching.And Inductance and Capacitance type is then when touching hair It is raw, capacitive coupling phenomenon can be produced between neighbouring two layers of conductor lines.
Embedded (InCell) production method can make it that display thickness is lightening, and as the touch-control of small-medium size now The mainstream technology of display product., can be because size increases to existing touch technology is extended to large touch panel And increase resistance capacitance and delay (RC Delay), cause noise to disturb when display panel drives, influence touch-control effect.Therefore, Existing touching detection technique still has improved space in fact.
The content of the invention
The purpose of the present invention is mainly providing an electronic device, wherein, which utilizes charge share, with detection Whether the touching or close of a foreign object is had.
According to the characteristic of the present invention, the present invention proposes a kind of electronic device, it includes one first scan line, one second sweeps Retouch line, one first data cable, a sense wire, a first transistor, a pixel, a second transistor, a charge and discharge device.This One transistor is connected to first scan line and first data cable.There is the pixel pixel electrode to be connected to the first crystal Pipe.The second transistor is connected to first scan line, the community electrode of the pixel and the sense wire.The charge and discharge device coupling It is bonded to the second transistor, second scan line and the sense wire;Wherein, when first scan line is high potential, the charge and discharge Electric installation is electrically charged, and when second scan line is high potential, which senses the electric current of the charge and discharge device, to judge to be The no touching or close for having a foreign object.
According to another characteristic of the present invention, the present invention proposes a kind of driving method of electronic device, which has One first scan line, one second scan line, one first data cable, a sense wire and a charge and discharge device, the charge and discharge device coupling Be bonded to second scan line, first data cable and the sense wire, the driving method in a first time interval, drive this Scan line is high potential, so that the charge and discharge device is electrically charged;And in one second time interval, drive second scan line For high potential, so that the sense wire senses the electric current of the charge and discharge device, the touching or close of a foreign object is determined whether according to this.
Brief description of the drawings
Fig. 1 is the schematic diagram for schematically showing the electronic device of the present invention.
Fig. 2 is the running schematic diagram of electronic device of the present invention.
Fig. 3 is the circuit diagram of electronic device of the present invention.
Fig. 4 and Fig. 5 is the running schematic diagram of the electronic device of Fig. 3.
Fig. 6, Fig. 7 and Fig. 8 are the simulation schematic diagram of the electronic device of Fig. 3.
Whether Fig. 9 has the touching of foreign object or close simulation schematic diagram for the present invention under different capacitances.
Figure 10 is another circuit diagram of electronic device of the present invention.
Figure 11 and Figure 12 is the simulation schematic diagram of the electronic device of Figure 10.
Figure 13 for the present invention have touching and when not touching the electric current that sense wire is sensed simulation schematic diagram.
Figure 14 is a kind of flow chart of the driving method of electronic device of the present invention.
Figure 15 uses schematic diagram for a kind of electronic device of the present invention.
Symbol description:
100 first scan line 110 of electronic device
Second scan line, 120 first data cable 130
140 the first transistor M1 of sense wire
150 second transistor M2 of pixel
160 third transistor M3 of charge and discharge device
The 5th transistor M5 of 4th transistor M4
170 grid g of direct current barrier capacitance
Drain d source electrodes s
151 common electrode 153 of pixel electrode
161 second end 163 of first end
190 equivalent capacity 180 of operational amplifier
1500 display screens 1510 of hand-held device
Region 1511.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.
Fig. 1 is the schematic diagram for schematically showing the electronic device 100 of the present invention.The electronic device 100 is swept including one first Retouch line 110, one second scan line 120, one first data cable 130, a sense wire 140, a first transistor M1, a pixel 150, One second transistor M2 and a charge and discharge device 160.In one embodiment of this invention, electronic device 100 can be that touch-control is shown Show panel.
The first transistor M1 is connected to first scan line 110 and first data cable 130.The pixel 150 has a picture Plain electrode 151 is connected to the first transistor M1.Second transistor M2 is connected to first scan line 110, the pixel 150 Community electrode (common electrode) 153 and the sense wire 140.The charge and discharge device 160 is coupled to second crystal Pipe M2, second scan line 120 and the sense wire 140.
Wherein, when first scan line 110 is high potential, which is electrically charged, when second scan line 120 when being high potential, which senses the electric current of the charge and discharge device 160, with determine whether the touching of a foreign object or It is close.The sense wire 140 is connected to an operational amplifier 190, and the electric current of the charge and discharge device 160 is converted into a touching sense Voltage is surveyed, so as to be used for follow-up touching detection.
Fig. 2 is the running schematic diagram of electronic device 100 of the present invention.As shown in Fig. 2, the touching of foreign object or close to the electronics fill A capacity effect is produced when putting 100, that is, has a touching because of foreign object or close the generated meeting of equivalent capacity 180 and the charge and discharge Electric installation 160 is in parallel.The effect capacitance 180 is not actual capacitance, it is for the touching of simulation foreign object or close to the electronic device 100 When caused capacity effect.The charge and discharge device 160 produces one with the touching of foreign object or close to generated equivalent capacity 180 Charge share effect.
Due to charge share effect, when the touching that has foreign object or it is close when, which senses the discharge and recharge The electric current of device 160 be less than without the foreign object touching or it is close when the charge and discharge device 160 electric current.Thus, you can inspection Survey the touching or close for whether having foreign object.In Fig. 2, the size of its depicted not actual components, it is merely to explanation electricity The running of sub-device 100.
Fig. 3 is the circuit diagram of electronic device 100 of the present invention.As shown in figure 3, the electronic device 100 includes one first scanning Line 110, one second scan line 120, one first data cable 130, a sense wire 140, a first transistor M1, a pixel 150, one Second transistor M2, a charge and discharge device 160, a third transistor M3, one the 4th transistor M4, one the 5th transistor M5 and Flow resistance is every capacitance 170 always.First to the 5th transistor M1~M5 can be low temperature polycrystalline silicon (Low Temperature Poly-silicon, LTPS) transistor, indium gallium zinc (Indium Gallium Zinc Oxide, IGZO) transistor or Non-crystalline silicon (a-Si) transistor.
The grid g of the first transistor M1 is connected to first scan line 110, its d that drains is connected to first data cable 130, its source electrode s are connected to the pixel electrode 151 of the pixel 150.The grid g of second transistor M2 is connected to this and first sweeps Line 110 is retouched, its d that drains is connected to the sense wire 140, its source electrode s is connected to the common electrode 153 of the pixel, the discharge and recharge Device 160 is a capacitance.
The grid g and drain electrode d of third transistor M3 is connected to first scan line 110, its source electrode s is connected to the charge and discharge One first end 161 of electric installation 160.The grid g of 4th transistor M4 is connected to second scan line 120, its d connection that drain To the common electrode 153 of the pixel 150, its source electrode s is connected to the first end 161 of the charge and discharge device 160.5th is brilliant The grid g of body pipe M5 is connected to the first end 161 of the charge and discharge device 160, its d that drains is connected to the sense wire 140, its source Pole s is connected to a second end 163 of the charge and discharge device 160.The first end of direct current barrier capacitance 170 is connected to the discharge and recharge The second end 163 of device 160, one second end are connected to second scan line 120.
Fig. 4 and Fig. 5 is the running schematic diagram of the electronic device 100 of Fig. 3.As shown in figure 4, when first scan line 110 is High potential and second scan line 120 for low potential constantly, the first transistor M1, second transistor M2 and the 3rd brilliant Body pipe M3 is turned on, and 130 voltage charges the charge and discharge device 160 on first data cable, and stores up the charge and discharge device 160 Deposit high potential.Voltage on the sense wire 140 is transferred to the common electrode (common by second transistor M2 electrode)153。
As shown in figure 5, when second scan line 120 is high potential and first scan line 110 is low potential, this first Transistor M1, second transistor M2 and third transistor M3 are closed, and the 4th transistor M4 and the 5th transistor M5 are led Logical, which produces a charge share effect with the touching of foreign object or close to generated equivalent capacity 180.Together When, the electric current of the charge and discharge device 160 is transmitted to the sense wire 140 by the 5th transistor M5.
Due to charge share effect, when the touching that has foreign object or it is close when, which senses the charge and discharge device 160 electric current be less than without the foreign object touching or it is close when the charge and discharge device 160 electric current, thus, you can detection is The no touching or close for having foreign object.Direct current barrier capacitance 170 can cut out DC leakage current, the electricity of such sense wire 140 Pressure can be improved to normal common voltage (VCom), and the signal for only sensing second scan line 120 is switched to by low potential Transient current during high potential, and reach the consumption for reducing whole touch-control system power.
Fig. 6, Fig. 7 and Fig. 8 are the simulation schematic diagram of the electronic device 100 of Fig. 3.It is 100 associated section of simulation electronic device The voltage and sensing electric current of point.Fig. 6 is voltage vgate 1in, second scan line 120 for showing first scan line 110 The schematic diagram of voltage vgate 2in and the voltage vgate 3in on a three scan line.Fig. 7 is touched and without tactile to show The schematic diagram of the voltage of each node when touching.Wherein, VPreset represents the voltage of Fig. 3 interior joints Preset in Fig. 7, in Fig. 7 VPixel represents the voltage of pixel electrode 151 in Fig. 3, and Vcom represents the voltage of common electrode 153 in Fig. 3 in Fig. 7.Fig. 8 is aobvious The simulation schematic diagram for the electric current that the sense wire 140 is sensed when being shown with touching and not touching.It can be sent out by aforementioned analog result Existing, by the technology of charge share, the present invention can successfully detect whether the touching or close of foreign object.
Whether Fig. 9 has the touching of foreign object or close simulation schematic diagram for the present invention under different capacitances.For difference The sunykatuib analysis of equivalent capacity 180, its for the touching for three kinds of different foreign objects or it is close when the equivalent capacity 180 that is generated To discuss.A exemplified by respectively:Equivalent capacity 180 is 10fF, charge and discharge device 160 is 5fF;Example B:Equivalent capacity 180 is 20fF, charge and discharge device 160 are 10fF;Example C:Equivalent capacity 180 is 30fF, charge and discharge device 160 is 20fF.By current analog As a result sensing current difference whether its touch-control can be learnt, (figure is not using the operational amplifier 190 and integrator for its difference Show) amplified reading.Further the analog result of three kinds of different touch control capacitance conditions is arranged into Fig. 9.
By Fig. 9 results, electronic device 100 of the invention really it is distinguishable go out touch-control whether difference, and the electronics The touching of foreign object in device 100 or it is close when the equivalent capacity 180 that is generated can be as small as the level of 10fF.
Figure 10 is another circuit diagram of electronic device 100 of the present invention.As shown in Figure 10, which includes one the Scan line 110, one second scan line 120, one first data cable 130, a sense wire 140, a first transistor M1, a pixel 150th, a second transistor M2, a charge and discharge device 160, a third transistor M3 and one the 4th transistor M4.This first to Four transistor M1~M4 are low temperature polycrystalline silicon (LTPS) transistor, indium gallium zinc (IGZO) transistor or non-crystalline silicon (a-Si) Transistor.
The grid g of third transistor M3 is connected to the first end 161 and common electrode of the charge and discharge device 160 (common electrode) 153, its d that drains are connected to the sense wire 140.The grid g of 4th transistor M4 is connected to this Second scan line 120, its d that drains are connected to a source electrode s of third transistor M3, its source electrode s is connected to second scan line 140。
When first scan line 110 is high potential, the first transistor M1 and second transistor M2 conductings, the sensing Voltage (Vsense) on line 140 is transferred to 153 (common of the common electrode by second transistor M2 Electrode), and to the charge and discharge device 160 high potential is charged to.When second scan line 120 is high potential, this first Transistor M1 and second transistor M2 is closed, third transistor M3 and the 4th transistor M4 conductings, the charge and discharge device 160 produce a charge share effect with the touching of foreign object or close to generated equivalent capacity 180, the charge and discharge device 160 Electric current is transmitted to the sense wire 140 by third transistor M3.
As shown in Figure 10,100 Main Differences of electronic device of itself and Fig. 3 are that the electronic device 100 of Figure 10 is 4T1C's Circuit design, the circuit design of the electronic device 10 compared with Fig. 3 lack a transistor, therefore the aperture opening ratio higher of its circuit design. The purpose of 4th transistor M4 is to form big resistance as the function of a diode (diode), to prevent the sense wire Electric current (Isense) on 140 flows to the 4th transistor M by third transistor M3, and declines signal code, so With regard to can improve sensing terminal voltage to normal common voltage (VCom), and the signal of second scan line 140 is only sensed by low Current potential is switched to transient current during high potential, reaches the precision of whole touch-control system according to this.
Figure 11 and Figure 12 is the simulation schematic diagram of the electronic device 100 of Figure 10.It is 100 interdependent node of simulation electronic device Voltage and sensing electric current.Figure 11 is the voltage and pixel electrode 151 of common electrode 153 when showing touching and not touching The schematic diagram of voltage.By the analog result of Figure 11 it can be found that by the technology of charge share, the present invention can be detected successfully Go out the touching or close for whether having foreign object.When Figure 12 is shows touching and does not touch, the voltage of pixel electrode 151 (VPixel) schematic diagram of the voltage (Vcom) of common electrode 153 is subtracted.The voltage of pixel electrode 151 subtracts common electrode 153 Voltage to represent to put on voltage in the pixel 150, the also as operation voltage of liquid crystal.Maintained by the liquid crystal voltage of Figure 12 Signal imitation result understands that the operation voltage of liquid crystal may remain in more than certain voltage, that is, the technology of the present invention is whether The no touching or close for having foreign object, can be such that liquid crystal normally operates.
Figure 13 for the present invention have touching and when not touching the electric current that the sense wire 140 is sensed simulation schematic diagram. As shown in figure 13, the difference between current that the sense wire 140 is sensed when having touching is as shown in ellipse B, the sense wire 140 when not touching The difference between current sensed is as shown in ellipse A.As shown in Figure 13, the electricity that the sense wire 140 is sensed when having touching and not touching Flow about 2 μ A of difference.It can be gone out whether to have touching respectively or not touched easily by the operational amplifier 190.That is, this hair Bright technology can detect the touching or close of foreign object easily.
Figure 14 is a kind of flow chart of the driving method of electronic device 100 of the present invention.As illustrated in the foregoing fig. 1, which fills Putting 100 has one first scan line 110, one second scan line 120, one first data cable 130, a sense wire 140 and a charge and discharge Electric installation 160.The charge and discharge device 160 is coupled to first scan line 110, second scan line 130, first data cable 130 and the sense wire 140, the driving method in a first time interval, drive first scan line first in step (A) 110 be high potential, so that the charge and discharge device 160 is electrically charged.In step (B), in one second time interval, drive this second Scan line 120 is high potential, so that the sense wire 140 senses the electric current of the charge and discharge device 160, determines whether foreign object according to this Touching or close.
The touching of foreign object or close to a capacity effect can be produced.The touching of the charge and discharge device 160 and foreign object or close to institute The equivalent capacity 180 of generation produces a charge share effect.When the touching that has foreign object or it is close when, the sense wire 140 sensing should The electric current of charge and discharge device 160 be less than no foreign object touching or it is close when the charge and discharge device 160 electric current.
Figure 15 uses schematic diagram for the electronic device 100 of one embodiment of the invention.This implementation can be such as mobile phone Hand-held device 1500.From preceding description, electronic device 100 of the present invention can coexist with the pixel of display device, therefore can To apply in a display screens 1510 of hand-held device 1500.In the whole display screens 1510, in X-direction and Y-direction On, such as the electronic device 100 every 100 pixels, i.e. one embodiment of the present invention of setting, therefore can be in the whole display firefly Foreign object touching or close detection function are provided in curtain 1510.In X-direction and Y-direction, one sheet is set every how many a pixels The electronic device 100 of inventive embodiments, can according to it is required touching detection resolution depending on, this is those skilled in the art Announcement according to the present invention can be done, and repeat no more.
In other embodiment, the electronic device 100 of the embodiment of the present invention is the display screens applied in Figure 15 In 1510 region 1511.In the region 1511, in X-direction and Y-direction, every a pixel, that is, this hair is set Bright electronic device 100.About 200 μm~300 μm of the effective width of the fingerprint peaks (ridge) of general finger print.An and display The size of pixel is about 5 μm.Therefore, that is, can be effective when an electronic device 100 of the embodiment of the present invention is set every a pixel Detect and correctly obtain the sensing image of fingerprint in ground.Therefore fingerprint inspection can be provided in the region 1511 of the display screens 1510 The function of survey.Without in addition setting a fingerprint detection button, it can effectively increase the display area of hand-held device 1500.
The design of the electronic device of the present invention is to utilize five thin film transistor (TFT)s and a capacitance or four thin film transistor (TFT)s And a capacitance is formed.When applying to embedded touch control panel, display can be used on the processing procedure of thin film transistor (TFT) and capacitance The processing procedure of panel, the advantages of possessing the touch technology of embedded (In Cell), and display panel can be maintained lightening.At the same time can Charge share is done using the capacitance of electronic device 100 of the present invention and the capacitance of finger, whether has hand on display panel to detect The touching of finger is close.The present invention utilizes charge share idea, can solve traditional large touch panel easily and face resistance Capacitance delays the problem of (RC Delay), can also realize light and thin type, low power consuming, the touch control display of low cost easily.In this hair In bright another embodiment, it is also possible to the electronic device of fingerprint detection function is being provided, while is showing and provide fingerprint detection, can had The display area of effect increase hand-held device.
Above-described embodiment is illustrated only for conveniently explanation, and the interest field that the present invention is advocated should be wanted with right certainly Ask subject to described in book, rather than be only limitted to above-described embodiment.

Claims (15)

1. a kind of electronic device, including:
One first scan line and one second scan line;
One first data cable;
One sense wire;
One the first transistor, is connected to first scan line and first data cable;
One pixel, there is a pixel electrode to be connected to the first transistor;
One second transistor, is connected to first scan line, the community electrode of the pixel and the sense wire;And
One charge and discharge device, coupled to the second transistor, second scan line and the sense wire;
Wherein, when first scan line is high potential, which is electrically charged, when second scan line is high potential When, which senses the electric current of the charge and discharge device, to determine whether the touching of a foreign object or close.
2. electronic device according to claim 1, wherein, one capacity effect of the touching of the foreign object or close generation, this is filled Electric discharge device produces a charge share effect with the touching of the foreign object or close to generated equivalent capacity.
3. electronic device according to claim 2, wherein, when the touching that has the foreign object or it is close when, sense wire sensing The electric current of the charge and discharge device be less than without the foreign object touching or it is close when the charge and discharge device electric current.
4. electronic device according to claim 3, wherein, the grid of the first transistor is connected to first scan line, It, which drains, is connected to first data cable, its source electrode is connected to the pixel electrode of the pixel, and the grid of the second transistor connects First scan line is connected to, its drain electrode is connected to the sense wire, its source electrode is connected to the common electrode of the pixel, the discharge and recharge Device is a capacitance.
5. electronic device according to claim 4, it is further included:
One third transistor, its grid and drain electrode are connected to first scan line, its source electrode is connected to the one of the charge and discharge device First end;
One the 4th transistor, its grid are connected to second scan line, it, which drains, is connected to the common electrode of the pixel, its source Pole is connected to the first end of the charge and discharge device;
One the 5th transistor, its grid are connected to the first end of the charge and discharge device, its drain electrode is connected to the sense wire, its source Pole is connected to a second end of the charge and discharge device;And
Flow resistance is every capacitance always, its first end is connected to the second end of the charge and discharge device, one second end be connected to this Two scan lines.
6. electronic device according to claim 5, wherein, when first scan line is high potential, the first transistor, The second transistor and the third transistor turn on, and the voltage on first data cable charges the charge and discharge device, the sensing Voltage on line is transferred to the common electrode by the second transistor.
7. electronic device according to claim 6, wherein, when second scan line is high potential, the first transistor, The second transistor and the third transistor are closed, the 4th transistor and the 5th transistor turns, the charge and discharge device with The touching of the foreign object produces a charge share effect close to generated equivalent capacity, and the electric current of the charge and discharge device passes through this 5th transistor and be transmitted to the sense wire.
8. electronic device according to claim 5, wherein, which is low-temperature polycrystalline silicon transistor, Indium gallium zinc transistor or amorphous silicon transistor.
9. electronic device according to claim 4, it is further included:
One third transistor, its grid are connected to the first end and common electrode of the charge and discharge device, its drain electrode is connected to the sense Survey line;And
One the 4th transistor, its grid are connected to second scan line, it, which drains, is connected to a source electrode of the third transistor, its Source electrode is connected to second scan line;
Wherein, a second end of the charge and discharge device is connected to second scan line.
10. electronic device according to claim 9, wherein, when first scan line is high potential, the first transistor And the second transistor turns on, the voltage on the sense wire is transferred to the common electrode by the second transistor, and to this Charge and discharge device charges.
11. electronic device according to claim 10, wherein, when second scan line is high potential, the first crystal Pipe and the second transistor are closed, the third transistor and the 4th transistor turns, which touches with the foreign object Touch or produce a charge share effect close to generated equivalent capacity, the electric current of the charge and discharge device passes through the third transistor And it is transmitted to the sense wire.
12. electronic device according to claim 9, wherein, which is low-temperature polycrystalline silicon transistor, Indium gallium zinc transistor or amorphous silicon transistor.
13. a kind of driving method of electronic device, which has one first scan line, one second scan line, one first Data cable, a sense wire and a charge and discharge device, the charge and discharge device is coupled to second scan line, first data cable and is somebody's turn to do Sense wire, the driving method include:
In a first time interval, it is high potential to drive first scan line, so that the charge and discharge device is electrically charged;And
In one second time interval, it is high potential to drive second scan line, so that the sense wire senses the charge and discharge device Electric current, determines whether the touching or close of a foreign object according to this.
14. the driving method of electronic device according to claim 13, wherein, the touching of the foreign object or electric close to producing one Hold effect, which produces a charge share effect with the touching of the foreign object or close to generated equivalent capacity.
15. the driving method of electronic device according to claim 14, wherein, when the touching that has the foreign object or it is close when, The sense wire sense the charge and discharge device electric current be less than without the foreign object touching or it is close when the charge and discharge device electricity Stream.
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