CN107924992A - Strain vertical magnetic tunnel device - Google Patents
Strain vertical magnetic tunnel device Download PDFInfo
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- CN107924992A CN107924992A CN201580082657.XA CN201580082657A CN107924992A CN 107924992 A CN107924992 A CN 107924992A CN 201580082657 A CN201580082657 A CN 201580082657A CN 107924992 A CN107924992 A CN 107924992A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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Abstract
The invention discloses a kind of MTJ material stacks with transverse strain free magnetic layer, the STTM devices using such stack and the calculating platform using such STTM devices.In certain embodiments, vertical pMTJ materials stack include by around material carry out the free magnetic layer of horizontal compressive strain, this increases coercive field strength for some more stable devices.In certain embodiments, a kind of pMTJ materials stack is enclosed in compression material.In some other embodiments, a kind of pMTJ materials stack is enclosed in dielectric enclosure first, it is allowed to which deposition conductive material in side's is as the strain inducing material layer for having compression on the shell.
Description
Background technology
Magnetic tunnel-junction (MTJ) device typically comprises the fixed magnetic layer separated by tunnel barriers and free magnetism
Layer, make use of the phenomenon for being referred to as tunnel magneto (TMR).For two ferromagnetic layers including being separated by thin insulating tunnel layer
Structure for, two it is magnetospheric magnetization in it is parallel-oriented when, than their not parallel (non-parallel or antiparallel orientations)
When, electronics will be more likely to tunnels through tunnel material layer.So, pMTJ can switch between two kinds of resistance states, Yi Zhongzhuan
State has low resistance, and a kind of state has high resistance.Resistance difference is bigger, and TMR ratios are bigger：(RAP-RP)/RP* 100%, its
Middle RPAnd RAPIt is the resistance of magnetized Parallel and antiparallel alignment respectively.TMR ratios are higher, easier combination pMTJ resistance states
Reliably to store position.Therefore, the TMR ratios for giving pMTJ are the spin-transfer torque memories (STTM) using pMTJ stacks
Important performance is measured.
For STTM devices, the magnetization that can be sensed using electric current is switched to set SM set mode.Can be via spin
Transfer square phenomenon makes the polarized state of first (freedom) ferromagnetic layer be cut relative to the fixed polarization of second (fixation) ferromagnetic layer
Change, enabling by applying electric current, the state of pMTJ is set.Can be by one or more structures and technology (for example, straight
Galvanic electricity stream, spin-Hall effect etc.) angular momentum (spin) of electronics is polarized.The electronics of these spin polarizations can be by it certainly
Angular momentum is transferred to the magnetization of free layer and makes its precession.So, the electric current arteries and veins more than certain threshold can be passed through
(for example, in about 1-10 nanoseconds) is rushed to switch the intensity of magnetization of free magnetic layer, as long as and current impulse is less than and fixation
Some more high threshold that layer architecture is associated, the magnetization of fixed magnetic layer is with regard to constant.
The MTJ that magnetic pole has the easy axis of magnetization of vertical (outside substrate plane) is possible to realize that modification is highly denser in specific surface
The memory of degree., can be by being established by adjacent layer (such as magnesia (MgO)) in general, when free magnetic layer is sufficiently thin
Interface perpendicular magnetic anisotropy realizes perpendicular magnetic anisotropic (PMA) in free magnetic layer.However, thin layer usually with it is relatively low
Coercive field Hc is associated.Therefore, it is possible to be favourable to give magnetic layer thickness to increase the technology of Hc and structure, for example, to change
Into the stability of pMTJ.
Brief description of the drawings
In the accompanying drawings, by way of example, and not limitation exemplified with material described herein.In order to illustrate it is simple clear
It is clear, what the element illustrated in figure was not necessarily drawn to scale.For example, for clarity, the scale of some elements may be relative to it
Its element is exaggerated.In addition, in the case where thinking fit, repeated reference mark is corresponding or similar to indicate between the figures
Element.In the accompanying drawings：
Fig. 1 is the sectional view of the material layer stack for STTM devices according to some embodiments of the invention；
Fig. 2 is during pMTJ coercive fields and membrane stress in accordance with some embodiments deposit strain inducing material layer as sputter
The curve map of the function of air-flow；
Fig. 3 A are the plans of the pMTJ devices according to the embodiment including multiple transverse strain pMTJ devices；
Fig. 3 B are the sectional views of the pMTJ devices shown in Fig. 3 A according to the embodiment；
Fig. 4 A are the plans of the pMTJ devices according to the embodiment including multiple transverse strain pMTJ devices；
Fig. 4 B are the sectional views of the pMTJ devices shown in Fig. 4 A according to the embodiment；
Fig. 5 A are the plans of the pMTJ devices according to the embodiment including multiple transverse strain pMTJ devices；
Fig. 5 B are the sectional views of the pMTJ devices shown in Fig. 5 A according to the embodiment；
Fig. 6 is flow chart, and it illustrates the side of the shown pMTJ devices in manufacture Fig. 5 A-5B in accordance with some embodiments
Method；
Fig. 7 is the schematic diagram of STTM bit locations according to an embodiment of the invention, it includes using transverse strain pMTJ devices
The spin-transfer torque element of part；
Fig. 8 is schematic diagram, and it illustrates the mobile computing platform sum number according to embodiments of the present invention using STTM arrays
According to server machine；And
Fig. 9 is functional block diagram, and it illustrates electronic computing device according to an embodiment of the invention.
Embodiment
One or more embodiments have been described with reference to the drawings.Although describing in detail and discussing concrete configuration and arrangement,
It should be appreciated that this being merely to illustrate that property purpose and do.Those skilled in the relevant art are not it will be recognized that departing from this theory
In the case of the spirit and scope of bright book, other configurations and arrangement are possible.Shown for those skilled in the relevant art
And be clear to, the techniques described herein and/or cloth can be used in the various other systems outside being described in detail herein and application
Put.
With reference to attached drawing in the following specific embodiments, the attached drawing formed the part of embodiment and exemplified with
Exemplary embodiment.Furthermore, it is to be understood that it can be utilized in the case where not departing from the scope of theme claimed
Its embodiment and the change that these embodiments are made with structure and/or logic.It should also be noted that direction and reference (example
Such as upper and lower, top, bottom) description to feature in attached drawing can be used merely to facilitate.Therefore, not managed with restricted meaning
Detailed description below is solved, and the scope of theme claimed is limited by the following claims and their equivalents.
In the following description, many details are elaborated.However, it will become apparent to those skilled in the art
It is that can put into practice the present invention in the case of these no details.In some instances, in block diagram form rather than in detail
Ground shows known method and equipment, to avoid obscuring the invention.To " embodiment " or " one in whole this specification
The reference of a embodiment " means to be included in this with reference to special characteristic, structure, function or the characteristic that the embodiment describes
In at least one embodiment of invention.Therefore, the phrase " in embodiment " occurred everywhere in whole this specification or "
In one embodiment " it is not necessarily referring to the identical embodiment of the present invention.Furthermore, it is possible in one or more embodiments with any
Suitable mode combines special characteristic, structure, function or characteristic.As long as for example, specific spy associated with two embodiments
Sign, structure, function or characteristic do not have to be mutually exclusive, it is possible to combine first embodiment with second embodiment.
As used in the specification and appended of the present invention, singulative " one ", "one" and " described "
It is intended to also include plural form, unless the context clearly.It will be further understood that as used herein, the term
"and/or" refers to and includes the associated any and all possible combination for listing one or more of project project.
Term " coupling " and " connection " can be used to describe the function between component herein together with their derivative
Or structural relation.It should be appreciated that these terms are not intended as mutual synonym.On the contrary, in a particular embodiment,
" connection " can serve to indicate that two or more elements physics, light or electrical contact directly with one another." coupling " can serve to indicate that
Two or more elements physically or electrically contact (between them with other intermediary elements) directly or indirectly to one another, and/or
Two or more element coordination with one another or interaction (for example, such as in causality).
As used herein, the term " ... on ", " ... under ", " ... between " and " ...
On " relative position of a component or material relative to other components or material is referred to, wherein, this physical relation is to be worth note
Meaning.Such as in the background of material, a kind of material or material that are arranged on or below another material can be with one kind
Or a variety of intermediate materials directly contact or can have one or more intermediate materials.In addition, it is arranged on two kinds of materials or material
Between a kind of material can directly be contacted with two layers or can have one or more intermediate layers.In contrast, " " second
Material or material " on " the first material or material directly contacted with second material/material.By in the background of element
Make similar differentiation.
As whole used in the specification and claims, by term "...... at least one" or
Any combination for lising the item that can represent listed that one or more of " ... " is attached.For example, phrase " A,
It is at least one in B or C " it can represent A；B；C；A and B；A and C；B and C；Or A, B and C.
Described herein is pMTJ material stacks, using the STTM devices of such material stack, and using this
The calculating platform of the STTM devices of sample.In certain embodiments, vertical pMTJ materials stack is included at least with magnetizing easy axis
The free magnetic layer of transverse strain on orthogonal direction, to improve knot stability.In some exemplary embodiments, whole pMTJ
Material stack (including be arranged between fixed magnetic material layer and free magnetism material layer (all with perpendicular magnetic anisotropic)
Tunnel dielectric materials layer all) by transverse strain, improve associated coercive field strength.The application bag of embodiment described herein
Include in-line memory, embedded non-volatile memory (NVM), magnetic RAM (MRAM) and non-embedded
Formula or SAM Stand Alone Memory.
Heat endurance Δ, which is device of the scaling based on STTM, and the memory array being produced from it is faced most important asks
One of topic.The heat endurance of bigger is associated with the longer memory component non-volatile service life.With the continuation of scaling, become
More it is difficult to keep enough stability.Heat endurance be defined as two kinds of magnetic states (such as (1,0), (it is parallel, it is anti-flat
Energy barrier E between OK)).Stability is equal to the magnetic anisotropy k of free magnetism materialeffWith the volume of free magnetism material
The product of (thickness t is multiplied by material and is stacked bulk area A) is again divided by thermal energy (kBT)：
It is generally thought that at least 60kBThe stability value of T is suitable for major applications.It may be evident, however, that scaling storage
Device cellar area reduces stability, 60kBThe target of T becomes increasingly difficult to realize.Magnetic anisotropy or saturated magnetization MsWith it is effective
Anisotropy field Hk,effFunction, so as to improve heat endurance by the increase of anisotropy field.In free magnetic layer
When sufficiently thin, when there is the interface perpendicular magnetic anisotropy established by adjacent layer (such as magnesia (MgO)), in free magnetic layer
Perpendicular magnetic anisotropic (PMA) can realize the H of biggerk,eff。
Damping be related to spin from a kind of state be switched to another kind when the magnetic-friction that is subjected to of spin magnetization.The resistance of bigger
Buddhist nun represents to need the critical reset current J of biggercThe magnetization of free layer is switched to another kind from a kind of state.Critical current Jc
It is proportional that the ratio between stability and transfer efficiency (~TMR) .TMR is multiplied by damping constant α.However, with due to spin pumping effect
Free layer thickness should be caused to reduce, damping can increase.So in general, anisotropic increase usually also linearly increases critical electricity
Current density, making it difficult to do not make to realize more high stability in the case of damping is increased at the same time.
In some embodiments of this paper, strengthen the steady of STTM units by inducing strain at least in free magnetic layer
Qualitative and/or reduction damping.If be properly aligned with relative to magnetic direction, this strain can be directed to given free magnetism material
Thickness of feed layer strengthens coercive field strength.For pMTJ stacks, strain should be horizontal, and the surface generally with substrate is put down
OK, it is and orthogonal with magnetic direction.
Fig. 1 is the sectional view of pMTJ devices 101 according to some embodiments of the present invention.PMTJ devices 101 include setting
PMTJ materials stack 102 between two electrodes 107 and 180.In the exemplary embodiment, metal electrode 107 (for example,
Bottom electrode) it is arranged on substrate 105.Fixed magnetic material layer (or stack) including one or more layers magnetic material
120 are arranged on electrode 107.Tunneling dielectric material layer 130 is arranged on fixed magnetic material layer or stack 120.
Free magnetism material layer (or stack) 160 is arranged on Tunneling dielectric material layer 130.In shown exemplary embodiment
In, dielectric material layer 170 (such as metal oxide (for example, MgO, VO, WO, VdO, TaO, HfO, MoO)) is arranged on freedom
On magnetic material layer 160.For the embodiment of spin-Hall effect (SHE), such cap can be not present
Layer.Metal electrode 180 (for example, top electrodes) is arranged on cap dielectric material layer 170.It should be noted that substituting
Embodiment in, the order of material layer 107-180 can invert, or be extended laterally out from shape characteristic side wall.
In certain embodiments, pMTJ materials stack 102 is perpendicular system, wherein magnetospheric spin is perpendicular to material
The plane (that is, magnetizing easy axis from the outside z directions of 105 plane of substrate) of layer.Fixed magnetic layer 120 can be by being adapted to maintain
Any material or stack of the material of fixed magnetisation direction are formed, while free magnetism material layer 160 is magnetically softer
(that is, magnetization can be easier to rotate to Parallel and antiparallel state relative to fixed bed).In certain embodiments, pMTJ materials
Stack 102 is based on CoFeB/MgO systems, has MgO tunneling materials layer 130, CoFeB fixed magnetic layers/120 and of stack
CoFeB free magnetisms material layer/stack 160.In an advantageous embodiment, all CoFeB layers all have body-centered cubic (BCC)
(001) brilliant structure (texture) outside face, wherein brilliant structure refers to the distribution of crystal orientation in each layer of pMTJ stacks 101.For extremely
For some few such embodiments, the high percentage CoFeB crystal of CoFeB/MgO/CoFeB stacks 101 has preferably
(001) out-of-plane orientation (that is, brilliant structure degree is high).In some CoFeB/MgO embodiments, the CoFeB magnetic materials of (001) orientation
Layer 120,160 is rich ferroalloy (that is, the Fe for improving magnetic up rightness>Co).In certain embodiments, Fe contents are at least
50%.Exemplary embodiment includes the B of 20-30% (for example, Co20Fe60B20).Other realities of cobalt and iron with moiety
It is also possible (for example, Co to apply example40Fe40B20).For fixed and/or free magnetic layer, other magnetic material components are also can
Can, such as, but not limited to：Co, Fe, Ni and these metals without boron alloy (for example, CoFe).In some advantageous embodiments,
The film thickness of free magnetic layer 160 is between 0.6 and 1.6nm.
Tunneling dielectric material layer 130 is by being adapted to the electric currents of the most spins of permission to hinder a small number of spins at the same time by this layer
The material or material stack of electric current (that is, spin filter) are formed, so as to influence associated with pMTJ materials stack 102
Tunneling magnetoresistive.In some exemplary embodiments, dielectric material layer 130 is magnesia (MgO).Dielectric material layer
130 can also provide crystallization template (for example, BCC with (001) brilliant structure), for free magnetism material layer 160 and/or fix
The solid phase epitaxial of magnetic material layer 120.
In certain embodiments, it is enough induction the answering parallel to pMTJ material layer planes in pMTJ stacks by applying
The transverse guidance stress of change provides the pMTJ devices of enhanced strain.Inventor has found, controls on pMTJ material stacks
Or the stress in the film of application adjacent thereto can be to the strain for corresponding to one or more magnetic material layers of magnetic material layer
Coercivity have a significant impact.Fig. 2 is that pMTJ coercive fields and cap membrane stress in accordance with some embodiments deposit cap as sputter
The curve map of used air-flow function during epiphragma.It is directed to using tunneling approach (CIPT) in electric current face and is covered in substrate
The complete pMJT materials stack of formula deposition measures coercive field Hc.On complete pMTJ materials stack, using for
Different Ar streams per treatment carry out cover type deposition layer of top electrode material.Further illustrate conduct in layer of top electrode material
The membrane stress of the function of the Ar partial pressure associated with sputter deposition top electrode material (for example, Ta or TiN) period Ar air-flow.Such as
Shown in figure, for specific top electrode material, membrane stress is tuned between 600MPa compression and 250MPa tensile stress.Note
Meaning, coercive field strength and top electrode material membrane stress strong correlation, show stress in control top electrode material such as
What, which is provided, is applied pMTJ materials stack in the path of strain engineering.Further it is to be noted, that the tensile stress material layer of top exists
Apply compression on the interface zone of lower floor in pMTJ material layer planes, the 250sccm Ar associated with peak value tensile stress
Stream maximizes the horizontal compressive strain in pMTJ stacks, so as to provide more high-coercive force for given pMTJ stacks.
In certain embodiments, transverse strain induced material layer be arranged on pMTJ material stacks top surface or side wall it
On.Fig. 3 A are the plans for including the strain pMTJ devices of multiple pMTJ materials stacks 102 according to embodiment.Fig. 3 B are roots
According to embodiment, along the sectional view of the strain pMTJ devices 301 of B-B ' lines shown in Fig. 3 A.Multiple 102 rows of pMTJ materials stack
It is listed on the surface of substrate 105, each pMTJ stacks 102 are spaced by interlayer dielectric 305.In some exemplary embodiments
In, pMTJ devices 301 include top side transverse strain induced material layer or cap.In exemplary embodiment illustrated, top side should
Become induced material layer 180 to be arranged on pMTJ materials stack 102.As shown in the arrow in Fig. 3 A and 3B, top side strain lures
Lead the compression for the top surface that material layer 180 applies parallel to each pMTJ stacks 102.Therefore, at least magnetic material layer, with
And all material layer advantageously in pMTJ stacks 102 is all pressed on the horizontal direction (for example, x, y) perpendicular to magnetic direction
Strain.
In certain embodiments, top side transverse strain induced material layer 180 acts also as the top electrodes in pMTJ devices.
In some embodiments, top side transverse strain induced material layer 180 is Ta, in pure element form or its alloy (for example, TaN etc.)
Form.In other embodiments, top side transverse strain induced material layer 180 is Ti, in pure element form or its alloy (example
Such as, TiN etc.) form.Can also use can tune any other conduction with high tensile stress (for example, 200MPa or bigger)
Material.Top side transverse strain induced material can also be the dielectric (for example, SiN) of cap pMTJ device electrodes.For so
Embodiment, conductive through hole can contact lower electrode by transverse strain induced material.In certain embodiments, in order to increase
The amount of transverse strain within big pMTJ stacks 102, the thickness of top side transverse strain induced material layer 180 is (for example, in Fig. 3 B
Z-dimension) it is more than the thickness of any material layer in pMTJ stacks (for example, magnetic or dielectric).In some other embodiments
In, the thickness that top side transverse strain induced material layer 180 has is more than the thickness of whole lower section pMTJ stacks 102.
In certain embodiments, transverse strain induced material layer is arranged on the side wall of pMTJ material stacks.Laterally
Strain inducing material layer can be stacked body sidewall with pMTJ materials and directly contact, or by stack sealant between two parties with being stacked
Body separates.Transverse strain induced material can be deposited between adjacent pMTJ materials stack, adjust depositing operation to be formed
Material with high pressure stress.The compression material layer adjacent with pMTJ side walls pMTJ will be stacked body sidewall apply parallel to
PMTJ materials layer plane and the power that body sidewall is stacked perpendicular to pMTJ.What compression material layer applied to outside pMTJ material layer planes
Power can be smaller, is limited be subject to pMTJ material layer z thickness.In certain embodiments, transverse strain induced material layer is arranged on
On both the top surface of pMTJ material stacks and the side wall of pMTJ material stacks.For example, transverse strain induced material layer
Can include the tensile stress material for being deposited as top electrodes in pMTJ devices, and be deposited on adjacent pMTJ materials stack it
Between compression material layer, be both stacked Immune inducing in vivo transverse direction compressive strain in pMTJ materials.
Fig. 4 A are the flat of the strain pMTJ devices 401 in accordance with some embodiments including multiple pMTJ materials stacks 102
Face figure.Fig. 4 B are according to embodiment, along the sectional view of the strain pMTJ devices 401 of B-B ' lines shown in Fig. 4 A.As shown in the figure, should
PMTJ devices 401 include surrounding the adjacent transverse strain inducing material layer 405 of pMTJ arrays of structures and being arranged on pMJT materials folding
Put the top side transverse strain induced material layer 180 on body 102.As shown in the arrow in Fig. 4 A and 4B, adjacent transverse strain lures
The pressure for the side wall that material layer 405 applies perpendicular to adjacent pMTJ stacks 102 is led, enhances top side transverse strain induced material
The pressure that layer 180 applies in the direction parallel to 102 top surface of pMTJ stacks.Adjacent transverse strain inducing material layer 405
It can combine or not combine top side transverse strain induced material layer 180 to use.
Adjacent transverse strain inducing material layer 405 can be can it is tuned with high pressure stress (for example, 200MPa or
Bigger, at least advantageously 400MPa) any material.In certain embodiments, adjacent transverse strain inducing material layer 405 is electricity
Dielectric material, such as, but not limited to Al2O3, SiO, SiON and SiN.Dielectric substance can function as interlayer dielectric, will
PMTJ material layers and other layers of electric insulation in same stack or adjacent pMTJ stacks.Adjacent transverse strain inducing material layer
405 at least cover free magnetism material layer, advantageously also cover fixed magnetic material layer.In some advantageous embodiments, laterally
Strain inducing material layer 405 covers whole pMTJ side walls 161 with the whole z-height applying power to pMTJ material stacks.Scheming
In exemplary embodiment shown in 4A-4B, transverse strain induced material layer 405 directly connects with the material layer in pMTJ stacks
Touch.
In some advantageous embodiments, the phase in the backfill strain pMTJ of adjacent transverse strain inducing material layer 405 devices 401
Gap between adjacent pMTJ structures.For example, the top surface of adjacent transverse strain inducing material layer 405 is induced with top side transverse strain
The top surface of material layer 180 is coplanar.If there is no top side transverse strain induced material layer 180, then adjacent transverse strain inducing
Material layer 405 can have the top surface coplanar with the top surface of pMTJ materials stack 102.
In certain embodiments, adjacent transverse strain inducing material layer is encapsulated by stack between two parties and is stacked with pMTJ materials
Body separates.For such embodiment, dielectric substance can be used (for example, those described for pMTJ devices 401
Any material) or conductive material layer so that pMTJ materials stack occur transverse strain.Fig. 5 A be according to some embodiments, including
The plan of the strain pMTJ devices 501 of multiple strain pMTJ materials stacks 102.Fig. 5 B are in the A according to the embodiment along Fig. 5
The sectional view of the strain pMTJ devices 501 of shown B-B ' lines.
In certain embodiments, adjacent transverse strain inducing material layer 405 is conductive material.Many conductive materials can
It is deposited as that there is more high pressure stress than most of dielectric substance, so as to induce bigger strain in pMTJ stacks.
For example, adjacent transverse strain inducing material layer 405 can be metal.In some exemplary embodiments, metal include Ta, W or
At least one of Ru.In certain embodiments, adjacent transverse strain inducing material layer 405 includes Ta, in pure element form or
Its alloy (for example, TaN etc.) form.Ta films advantageously can deposit to very high-caliber compression (for example, 200- by sputter
400MPa or bigger).In other embodiments, adjacent transverse strain inducing material layer 405 includes W or Ru, in pure element shape
Formula or its alloy form.
As being further illustrated in Fig. 5 A and 5B, adjacent transverse strain inducing material layer 405 passes through dielectric substance between two parties
Layer 510 is spaced apart with the material layer of pMTJ stacks 102.Dielectric material layer 510 is arranged on pMTJ stacks 102, is covered
Cover the peripheral sidewall of one or more (for example, all) material layers of pMTJ stacks 102.As further shown in FIG., dielectric
Material layer 510 also separates electrode material 107 and 180 and adjacent transverse strain inducing material layer 405, prevents conductive adjacent horizontal stroke
Make pMTJ device electricity short circuits to strain inducing material layer.Dielectric material layer 510 can have any group of abundant high resistivity
Point, such as, but not limited to SiO, SiON, SiN, any of low K dielectrics etc..Dielectric material layer 510 can have width
The thickness (for example, 2-20nm) of scope and advantageously below 5nm, so that the volume of conductive transverse strain induced material layer 405 is most
Bigization.In the example being further illustrated in figure 4b, between metal strain induced material 405 is backfilled between adjacent pMTJ stacks
Gap, with the top surface with top electrodes 180, coplanar with the dielectric material layer 510 that is disposed there between.
The pMTJ materials according to above framework can be manufactured by the various methods that the various technologies of application and process chamber configure
Expect stack and device.Fig. 6 is flow chart, shows the method that pMTJ devices shown in Fig. 5 501 is manufactured according to some embodiments
601.Method 601 starts from receiving substrate in operation 610.Any substrate of known suitable micro-electronic manufacturing can be received, for example,
But it is not limited to crystalline silicon substrate.When operation 610 is received, can there are transistor and/or one or more levels interconnection on substrate
Metallization.
In operation 620, pMTJ material stacks are deposited.In the exemplary embodiment, deposited bottom electrode metal, fixed magnetic
Property layer or material stack, such as richness Fe CoFeB.Various underlying layer, such as SAF structure can also be deposited.In fixed magnetic layer
On deposit Tunneling dielectric material, such as MgO.Free magnetism material layer is deposited on Tunneling dielectric material, for example, it is rich
Fe CoFeB.Can the further deposit dielectrics cap material on free magnetic layer, such as MgO.Then in pMTJ materials
Top electrode metal is deposited on stack.In the exemplary embodiment, operation 620 needs to perform physics at less than 250 DEG C
It is vapor-deposited (sputtering sedimentation).Can be to utilize one kind of cosputtering and reactive sputtering in any capacity known in the prior art
It is or a variety of to form various layer components as described herein.For PVD embodiments, with can be discontinuous on substrate area
One or more of the amorphous form deposition materials layer of (for example, forming uncombined island), it is fixed such as, but not limited to magnetism
With free material layer.Can be that those materials with known precursors perform replacement deposition technique, such as atomic layer deposition
(ALD).Alternatively, epitaxy technique can be carried out, such as, but not limited to molecular beam epitaxy (MBE) to grow the one of pMTJ material layers
It is a or multiple.For the one or more in the deposition technique of these replacements, at least magnetic material layer can be deposited as having
At least some micro-structures (for example, polycrystal with brilliant structure).
In certain embodiments, the deposition of top electrode metal is further included by physical vapour deposition (PVD) (PVD) to deposit tool
There is the metal of high tensile stress.For example, at least one of Ta or Ti is deposited on pMTJ material stacks in operation 620.One
In a little example T a embodiments, deposited using high Ar partial pressures, to deposit the Ta films with least 200MPa tensile stress.
Method 601 continues that pMTJ material stacks are patterned to the array of pMTJ device architectures in operation 630.Can be
Operation 630 uses any of Patternized technique to portray the array of pMTJ device architectures.640 are being operated, in pMTJ devices
Deposit dielectric material layer on the array of structure.Any of preparation technology in low temperature can be used, such as, but not limited to etc.
Gas ions enhancing chemical vapor deposition (PECVD), PVD etc..In certain embodiments, directly in pMTJ material layers (for example, freely
Magnetosphere and fixed magnetic layer) deposited on sidewalls dielectric material layer.
In operation 650, the pMTJ device arrays of transverse strain induced material backfill dielectric-encapsulated are utilized.In some examples
Property embodiment in, on dielectric material layer deposition with high pressure stress metal material layer.In certain embodiments, operate
650 need with pure element or alloy form sputtering sedimentation Ta, W or Ru.Splash-proofing sputtering process parameter, such as Ar partial pressures can be set, with
Metal film of the deposition with 400MPa or more huge pressing stress.Can be enough completely two adjacent pMJT materials stacks of backfill it
Between gap duration in carry out sputtering sedimentation.
In operation 660, pMTJ arrays are planarized, the top electrodes of exposure pMTJ devices then can be complete in operation 670
It is interconnected to during into device in addressable memory (CAM) cell array.The microelectronics manufacture of any standard, example can be performed
Such as photoetching, etching, thin film deposition, planarization (for example, CMP), to complete to use strain pMTJ material devices as described herein
Or the interconnection of the STTM devices of any of material layer subset therein.
It is well known in the art after one or more layers (for example, all layers) of deposition pMTJ material stacks
It is any under the conditions of anneal, to promote the solid phase epitaxial of free magnetic layer and/or fixed magnetic layer, so as to be polycrystalline BCC
Micro-structure assigns (001) brilliant structure.For the exemplary embodiment annealed under 250 DEG C or higher temperature, annealing temperature, hold
Continuous time and environment can change.In certain embodiments, transverse strain induced material is deposited on pMTJ material stacks
Thermal annealing is performed afterwards.In other embodiments, held before depositing transverse strain induced material on pMTJ material stacks
Row thermal annealing.
In embodiment, pMTJ is actual serves as resistor, wherein, according in (multiple) free magnetic layer or (multiple) fixed
Magnetized direction or orientation in magnetosphere, can reside in two kinds of resistance states, i.e., by the resistance of the power path of pMTJ
" height " or " low ".In spin direction in (multiple) free magnetic layer in the case of downward (minority), there are high resistance state, and
And the direction of magnetization in (multiple) free magnetic layer and (multiple) fixed magnetic layer of coupling is antiparallel each other.Exist in spin direction
In the free magnetic layer of coupling in the case of upward (majority), there are low resistance state, the free magnetic layer of coupling and fixed magnetic
The direction of magnetization in property layer is parallel to each other.For the term " low " of pMTJ resistance states and " height " are toward each other.Change
Yan Zhi, high resistance state are only that vice versa than low resistance situation detectably more high resistance.Therefore, in resistance
Detectable difference, high low resistance state can represent different information bit (that is, " 0 " or " 1 ").
Magnetized direction in the free magnetic layer of coupling can be referred to as spinning by using spin polarized current
The process for moving square (" STT ") switches over.Electric current is typically non-polarised (for example, by about 50% upper rotation and about
50% backspin electronics is formed).The electric current of spin polarization is the electric current for having greater amount of upper rotation or backspin electronics.Spin pole
Galvanic current can be produced by transmitting electric current through fixed magnetic layer.The electronics of spin polarized current from fixed magnetic layer leads to
208 tunnelling of tunneling barrier or dielectric layer is crossed, and its spin angular momentaum is transferred to free magnetic layer, wherein free magnetic layer will
The direction of magnetization or parallel of its direction of magnetization from antiparallel orientations into fixed magnetic layer.It can also be led to using spin-Hall effect
Cross and produce the polarized electric current that spins with the specific electrode materials of free magnetism material layer contacts.For such embodiment,
Electric current can not be applied by the other materials layer of fixed magnetic layer and pMTJ to be orientated to free magnetic layer.In any implementation
In mode, free magnetic layer can be made to return to its initial orientation by reverse current.Therefore, pMTJ can magnetize shape by it
State stores single information bit (" 0 " or " 1 ").The information stored in pMTJ is sensed by driving a current through pMTJ.Free magnetic
Property layer power is not required to keep its magnetization orientation.So, when removing device power, the state of pMTJ is maintained.Cause
This, the spin-transfer torque memory bit location described herein being made of material stack is non-volatile.
Fig. 7 is the schematic diagram of STTM bit locations 701 according to an embodiment of the invention, and STTM bit locations 701 include spin
Shift square element 710.The spin-transfer torque element 710 includes the pMTJ that transverse strain for example occurs by adjacent materials layer 405
Device.Element 710 further includes the first metallization 107 and the second metallization 180, its is at least one in a change (tensile stress).
Second metallization 180 is electrically coupled to the first metal and interconnects 792 (for example, bit lines).First metallization 107 passes through the electricity of transistor 715
It is connected to the second metal and interconnects 791 (for example, source electrode lines).Transistor 715 further passes through any usual manner in the prior art
It is connected to the 3rd metal and interconnects 793 (for example, wordline).In SHE embodiments, the second metallization 180 can be coupled further
To the 4th metal interconnection 794 (for example, maintaining reference potential relative to the first metal interconnection 792).As solid state non-volatile is deposited
Memory device field it will be understood by the skilled person that spin-transfer torque memory bit location 701 can also include extra reading and write
Circuit (not shown), sensing amplifier (not shown), bit line benchmark (not shown) etc..Multiple spin-transfer torque memory bit locations
710 can operatively be connected to each other, and to form memory array (not shown), wherein the memory array can be merged in non-easy
In the property lost storage component part.
Fig. 8 is shown for example according to the system 800 of the embodiments of the present invention, wherein mobile computing platform 805 and/or number
PMTJ devices according to server machine 806 using transverse strain.Server machine 806 can be any commercial server, for example,
Including any number of high-performance calculation platform, they are arranged in rack parallel-connection network together to carry out electronic data processing,
In the exemplary embodiment, it includes the device 850 of encapsulation.
Mobile computing platform 805 can be shown for electronic data, electronic data processing, wireless electronic data transmission etc. match somebody with somebody
Any portable set put.For example, mobile computing platform 805 can be tablet PC, smart phone, laptop computer
Deng it is any, and display screen (for example, condenser type, inductance type, resistance-type or optical touch screen), chip-scale or envelope can be included
Fill level integrated system 810 and battery 815.
No matter it is arranged on the integrated system 810 shown in enlarged drawing 820 Nei or as the independence envelope in server machine 806
Device is filled, SOC 860 includes the pMTJ devices of transverse strain.SOC 560 can also include memory circuitry and/or processor
Circuit 840 (for example, STTM, MRAM, microprocessor, multi-core microprocessor, graphics processor etc.).Controller 835, PMIC 830
Or any one of RF (radio frequency) integrated circuit (RFIC) 825 can be including the embedded of the pMTJ devices using transverse strain
STTM。
As further shown in FIG., in the exemplary embodiment, RFIC 825 has the output for being coupled to antenna (not shown),
To implement any standard or agreement in some wireless standards or agreement, include but not limited to：Wi-Fi (802.11 systems of IEEE
Row), WiMAX (IEEE 802.16 series), IEEE 802.20, Long Term Evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA
+, EDGE, GSM, GPRS, CDMA, TDMA, EDCT, bluetooth, its derivative, and any be designated as 3G, 4G, 5G and higher version
This other wireless protocols.In alternative embodiments, these SoC moulds each can be integrated into the block is coupled to encapsulation
On the independent IC of substrate, interpolater or plate.
Fig. 9 is the functional block diagram for the computing device 900 arranged according at least some embodiments of the disclosure.Computing device
900 can reside in inside such as platform 905 or server machine 906.If equipment 900 further includes the motherboard of trustship dry part
902, such as, but not limited to processor 904 (for example, application processor), it can be combined with based on real according to the present invention component
Applying example includes the inserted magnetic memory of pMTJ material stacks of Mo base free magnetism coupling layers.Processor 904 can be with thing
Manage and/or be electrically coupled to motherboard 902.In some instances, processor 904 includes being encapsulated in the collection within processor 904
Into circuit.In general, term " processor " or " microprocessor " can refer to electronic data of the processing from register and/or memory
Set so that the electronic data to be transformed into any of other electronic data that can be further stored in register and/or memory
Standby or equipment part.
In each example, one or more communication chips 906 with physics and/or can be electrically coupled to motherboard 902.Other
In embodiment, communication chip 906 can be the part of processor 904.Its application of root Ju, computing device 900 can include can
With physics and it is electrically coupled or is not coupled to other components of motherboard 902.These other components include, but are not limited to volatibility and deposit
Reservoir (for example, DRAM), nonvolatile memory (for example, ROM), flash memory, graphics processor, Digital Signal Processing
Device, cipher processor, chipset, antenna, touch-screen display, touch screen controller, battery, audio codec, video are compiled
Decoder, power amplifier, global positioning system (GPS) equipment, compass, accelerometer, gyroscope, loudspeaker, camera and sea
Storage device (for example, hard disk drive, solid state drive (SSD), CD (CD), digital versatile disc (DVD) etc.) is measured, etc.
Deng.
Communication chip 906 can realize wireless communication, for transmitting data and from computing device to computing device 900
900 transmission data.Term " wireless " and its derivative can be used for description can be come by using modulated electromagnetic radiation through
By the circuit of non-solid medium transmission data, equipment, system, method, technology, communication channel etc..The term does not imply that association
Equipment do not include any circuit, although they can not include in certain embodiments.Communication chip 906 can be implemented some
Any standard or agreement of wireless standard or agreement, include, but are not limited to it is described elsewhere herein those.Set as described above, calculating
Standby 900 can include multiple communication chips 906.For example, the first communication chip can be exclusively used in the short distance of such as Wi-Fi and bluetooth
Wireless communication, and the second communication chip can be exclusively used in GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO etc.
Remote radio communication.
Although describing special characteristic set forth herein by reference to each embodiment, this specification is not intended to limit
Property meaning processed is explained.Therefore, the various modifications of embodiment described herein and by disclosure one of ordinary skill in the art and
Say that obvious other embodiment is considered as falling within spirit and scope of the present disclosure.
It will be recognized that the embodiment that the invention is not restricted to so describe, but modifications and changes can be subject to and put into practice, and
Scope of the following claims is not departed from.For example, above example can include the specific group of the feature provided further below
Close.
In one or more first embodiments, a kind of vertical magnetic tunnel-junction (pMTJ) device includes being arranged on substrate
PMTJ material stacks, which includes being arranged on tunnel dielectric between fixed magnetic layer and free magnetic layer
Both material layer, fixed magnetic layer and free magnetic layer have perpendicular magnetic anisotropic.The device is folded including being arranged on pMTJ
The dielectric material layer on body is put, the peripheral sidewall of dielectric material layer covering at least free magnetism material layer, Yi Jishe
Put on dielectric at least partially surrounding the metal of peripheral sidewall.
In the further describing of first embodiment, which is element refractory metal or its alloy.
In the further describing of first embodiment more than immediately, which includes at least one of Ta, W or Ru.
In the further describing of first embodiment, pMTJ material stacks are one that pMTJ materials are stacked in volume array
Stack, the metal backfill the gap between the adjacent pMTJ materials stack in array, are folded entirely around each pMTJ materials
Put body.
In the further describing of first embodiment more than immediately, the electrode top table of the metal and pMTJ material stacks
Face is coplanar, which is arranged between electrode sidewall and metal strain induced material.
In one or more second embodiments, a kind of vertical magnetic tunnel-junction (pMTJ) device bag for being arranged on substrate
The pMTJ material stacks for being arranged on substrate are included, which includes being arranged on fixed magnetic layer and free magnetic layer
Between tunnel dielectric materials layer, fixed magnetic layer and free magnetic layer all have perpendicular magnetic anisotropic.The material is stacked
Body include being arranged on pMTJ material stack top surfaces or side wall it is at least one on transverse strain induced material layer.
In the further describing of second embodiment, which includes being arranged on pMTJ material stacks
On tensile stress top electrode material.
In the further describing of second embodiment more than immediately, which includes Ta.
In the further describing of second embodiment more than, which further includes and free magnetism
The compression dielectric or metal that the side wall of layer, fixed magnetic layer and tunnel dielectric layer is disposed adjacent.
In the further describing of second embodiment more than immediately, the transverse strain induced material adjacent with side wall with
The top surface of top electrode material is coplanar, and dielectric material layer is provided between the side wall and strain inducing material of top electrodes.
In one or more 3rd embodiments, a kind of Nonvolatile memery unit includes first electrode, is coupled to and deposits
The pMTJ devices and transistor of the second electrode of the bit line of memory array, any embodiment of first or second embodiments, should
Transistor have be electrically coupled to first electrode the first terminal, be electrically coupled to memory array source electrode line Second terminal and
It is electrically coupled to the third terminal of the wordline of memory array.
In one or more fourth embodiments, a kind of Nonvolatile memery unit includes first electrode, is coupled to and deposits
The second electrode of the bit line of memory array, the pMTJ material stacks being arranged between the first and second electrodes, the material are stacked
Body includes the tunnel dielectric materials layer being arranged between fixed magnetic layer and free magnetic layer, fixed magnetic layer and free magnetism
Layer all has perpendicular magnetic anisotropic.The transverse direction that the unit includes being arranged on pMTJ material stack top surfaces or side wall should
Become induced material, and transistor, which, which has, is electrically coupled to the first terminal of first electrode, is electrically coupled to memory array
The Second terminal of the source electrode line of row and be electrically coupled to memory array wordline third terminal.
In one or more 5th embodiments, a kind of nonvolatile memory device includes implementing according to the four, the 3rd
Multiple Nonvolatile memery units of example.Free magnetism material and fixed magnetic material layer include CoFeB.The transverse strain lures
Leading material includes being arranged on the side wall of free magnetic layer, fixed magnetic layer and tunnel dielectric layer and is situated between by electricity between two parties
The metal that material is separated with CoFeB.The storage component part includes the array of pMTJ material stacks, the metal transverse strain
Gap within induced material backfill array between adjacent pMTJ materials stack, is folded entirely around each pMTJ materials of array
Put body.
In one or more sixth embodiments, a kind of mobile computing platform includes nonvolatile memory, this is non-volatile
Property memory include Nonvolatile memery unit according to any embodiment of fourth embodiment；It is non-volatile to be communicatively coupled to this
The processor of property memory；It is coupled to the battery of processor；And wireless transceiver.
In one or more 7th embodiments, the method that one kind forms vertical magnetic tunnel-junction (pMTJ) device is included in lining
PMTJ material stacks are deposited on bottom, which includes being arranged between fixed magnetic layer and free magnetic layer
Tunnel dielectric materials layer, fixed magnetic layer and free magnetic layer all have perpendicular magnetic anisotropic.This method includes will
PMTJ material stacks are patterned to the array for the discrete pMTJ structures for being arranged on substrate, and are deposited on the array
Compression material, the side wall of compression material covering at least free magnetic layer, using pMTJ arrays of structures by compression material
It is planarized to expose multiple pMTJ electrodes, and interconnection pMTJ electrodes.
In the further describing of the 7th embodiment, deposition pMTJ material stacks be additionally included in pMTJ materials stack it
Upper deposition is in the electrode metal under compression.
In the further describing of the 7th embodiment more than immediately, on array depositing compression material further includes directly
The deposited on sidewalls dielectric material layer of free magnetic layer and fixed magnetic layer is connected on, deposition pressure should on dielectric material layer
Power metal material layer, and by compression it is material planarized further include it is using the top surface of pMTJ electrodes that metal material layer is flat
Change.
In the further describing of the 7th embodiment more than immediately, deposit the metal and further include sputtering sedimentation Ta, W or Ru
At least one or its alloy.
In the further describing of the 7th embodiment more than immediately, deposit the metal and further include sputtering sedimentation Ta or its conjunction
Gold.
In the further describing of the 7th embodiment more than immediately, sputtering sedimentation backfills two adjacent pMTJ materials and is stacked
Gap between body.
In the further describing of the 7th embodiment, this method is additionally included in sputtering sedimentation on pMTJ material stacks
Stress electrode material, and patterned to pMTJ material stacks while electrode material is patterned.
However, above example is not limited in this context, and in various embodiments, above example can be included only
Using the subset of such feature, using the different order of such feature, using such feature various combination and/or adopt
With the additional features in addition to those features being expressly recited.Therefore, appended claims are should refer to, together with such right
It is required that the full breadth of the equivalent being entitled to determines the scope of the present invention.
Claims (20)
1. a kind of vertical magnetic tunnel-junction (pMTJ) device, including：
The pMTJ material stacks of substrate are arranged on, the material stack includes being arranged on fixed magnetic material layer and oneself
By the tunnel dielectric materials layer between magnetic material layer, both the fixed magnetic material layer and the free magnetism material layer
All there is perpendicular magnetic anisotropic；
The dielectric material layer being arranged on the pMTJ stacks, the dielectric material layer cover at least described free magnetic
The peripheral sidewall of property material layer；And
The metal being arranged on the dielectric, it is at least partially surrounding the peripheral sidewall.
2. pMTJ devices according to claim 1, wherein, the metal is element refractory metal or its alloy.
3. pMTJ devices according to claim 2, wherein, the metal includes at least one of Ta, W or Ru.
4. pMTJ devices according to claim 1, wherein：
The pMTJ materials stack is the stack that pMTJ materials are stacked in volume array；And
The metal backfills the gap between the adjacent pMTJ materials stack in the array, entirely around each pMTJ materials
Stack.
5. pMTJ devices according to claim 4, wherein, the top of the metal and the electrode of the pMTJ materials stack
Surface co-planar, and the dielectric material layer is arranged between the electrode sidewall and metal strain induced material.
6. a kind of vertical magnetic tunnel-junction (pMTJ) device, it is arranged on substrate, and the device includes：
The pMTJ material stacks of substrate are arranged on, the material stack includes being arranged on fixed magnetic material layer and oneself
By the tunnel dielectric materials layer between magnetic material layer, both the fixed magnetic material layer and the free magnetism material layer
All there is perpendicular magnetic anisotropic；And
Transverse strain induced material layer, its be arranged in the top surface or side wall of the pMTJ materials stack it is at least one it
On.
7. pMTJ devices according to claim 6, wherein, the transverse strain induced material includes being arranged on the pMTJ
Tensile stress top electrode material on material stack.
8. pMTJ devices according to claim 7, wherein, the top electrode material includes Ta.
9. pMTJ devices according to claim 7, wherein, the transverse strain induced material further includes and the free magnetic
The compression dielectric or metal that the side wall of property layer, the fixed magnetic layer and tunnel dielectric layer is disposed adjacently.
10. pMTJ devices according to claim 9, wherein：
The transverse strain induced material and the top surface of the top electrode material adjacent with the side wall is coplanar, wherein,
Dielectric material layer is provided between the side wall of the top electrodes and the strain inducing material.
11. a kind of Nonvolatile memery unit, including：
First electrode；
It is coupled to the second electrode of the bit line of memory array；
PMTJ devices according to any one of claim 6-10；And
Transistor, the transistor, which has, to be electrically coupled to the first terminal of the first electrode, is electrically coupled to the memory array
The Second terminal of the source electrode line of row and be electrically coupled to the memory array wordline third terminal.
12. a kind of nonvolatile memory device, including：
Multiple Nonvolatile memery units according to claim 11；Wherein：
The free magnetism material layer and the fixed magnetic material layer include CoFeB；
The transverse strain induced material includes being arranged on the free magnetic layer, the fixed magnetic layer and tunnel dielectric layer
Side wall on and the metal that is separated by dielectric substance between two parties and CoFeB；
The storage component part includes the array of pMTJ material stacks；And
The metal transverse strain induced material backfills the gap between the adjacent pMTJ materials stack in the array, completely
Around each pMTJ materials stack of the array.
13. a kind of mobile computing platform, including：
Nonvolatile memory, it includes multiple Nonvolatile memery units according to claim 11；
It is communicatively coupled to the processor of the nonvolatile memory；
It is coupled to the battery of the processor；And
Wireless transceiver.
14. the method that one kind forms vertical magnetic tunnel-junction (pMTJ) device, the described method includes：
Substrate deposit pMTJ material stacks, the pMTJ materials stack include be arranged on fixed magnetic material layer with
Tunnel dielectric materials layer between free magnetism material layer, the fixed magnetic material layer and the free magnetism material layer two
Person has perpendicular magnetic anisotropic；
The pMTJ materials stack is patterned to the array for the discrete pMTJ structures for being arranged on the substrate；
Compression material is deposited on the array, the compression material covers the side wall of at least described free magnetic layer；
It is using the array of the pMTJ structures that the compression is material planarized with the multiple pMTJ electrodes of exposure；And
Interconnect the pMTJ electrodes.
15. according to the method for claim 14, wherein, deposit the pMTJ materials stack and be additionally included in the pMTJ materials
Expect that deposition is in the electrode metal under compression on stack.
16. according to the method for claim 14, wherein, the compression material is deposited on the array and is further included：
The Direct precipitation dielectric material layer on the side wall of the free magnetic layer and the fixed magnetic layer；
Compression metal material layer is deposited on the dielectric material layer；And
Further include the compression is material planarized：It is using the top surface of the pMTJ electrodes that the metal material layer is flat
Change.
17. according to the method for claim 16, wherein, deposit the metal and further include sputtering sedimentation Ta, W or Ru at least
A kind of or its alloy.
18. according to the method for claim 17, wherein, deposit the metal and further include sputtering sedimentation Ta or its alloy.
19. according to the method for claim 17, wherein, the sputtering sedimentation backfill two adjacent pMTJ materials stacks it
Between gap.
20. according to the method for claim 17, further include：The sputtering sedimentation tensile stress on the pMTJ materials stack
Electrode material, and carrying out patterned to the pMTJ materials stack while the electrode material is patterned.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2015/052376 WO2017052627A1 (en) | 2015-09-25 | 2015-09-25 | Strained perpendicular magnetic tunnel junction devices |
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| CN (1) | CN107924992B (en) |
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| CN104584250A (en) * | 2012-09-26 | 2015-04-29 | 英特尔公司 | Perpendicular MTJ stacks including magnetic anisotropy enhancing layer and crystallization barrier layer |
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| CN111370438B (en) * | 2018-12-26 | 2023-01-31 | 中电海康集团有限公司 | Magnetic memory array |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN107924992B (en) | 2023-04-07 |
| US20180287050A1 (en) | 2018-10-04 |
| US10636960B2 (en) | 2020-04-28 |
| DE112015006972T5 (en) | 2018-07-12 |
| WO2017052627A1 (en) | 2017-03-30 |
| TW201813143A (en) | 2018-04-01 |
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