CN107910334A - Display panel and its manufacture method - Google Patents
Display panel and its manufacture method Download PDFInfo
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- CN107910334A CN107910334A CN201711077377.7A CN201711077377A CN107910334A CN 107910334 A CN107910334 A CN 107910334A CN 201711077377 A CN201711077377 A CN 201711077377A CN 107910334 A CN107910334 A CN 107910334A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000008021 deposition Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 7
- 230000003139 buffering effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of display panel, it includes flexible substrates, multiple thin film transistor (TFT)s, planarization layer and electrode layer.Multiple thin film transistor (TFT)s are arranged at intervals in the flexible substrates, each thin film transistor (TFT) includes the first inorganic layer and the second inorganic layer, first inorganic layer is set adjacent to the flexible substrates, and first inorganic layer, second inorganic layer, the planarization layer are in be stacked successively.The electrode layer is arranged on the planarization layer and is connected with the thin film transistor (TFT).The buffer area through first inorganic layer and second inorganic layer is equipped between adjacent thin film transistor (TFT), to improve the resistance to bent performance of the display panel.Present invention also offers a kind of manufacture method of display panel.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of flexible display panels and its manufacture method.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, clarity and contrast are high, nearly 180 ° of visual angles, use temperature ranges
Many advantages, such as wide, it is the display device for most having development potentiality to be known as by industry.Flexible OLED display has can be curved
The characteristics of bent, and then one of emphasis direction as display industry development.
The image element circuit for driving luminescence unit to shine is laid with flexible OLED display.Image element circuit includes
Multiple thin film transistor (TFT)s (Thin Film Transistor, TFT).Multilayer inorganic layer is equipped between thin film transistor (TFT).It is described
Multilayer inorganic layer is easy to cause film transistor device film layer and peels off or rupture, so as to influence flexible OLED after multiple bending
Display effect when display device uses.
The content of the invention
In order to solve foregoing problems, the present invention provides a kind of display panel and its manufacture method.
A kind of display panel, it includes flexible substrates, multiple thin film transistor (TFT)s, planarization layer and electrode layer, the multiple
Thin film transistor (TFT) is arranged at intervals in the flexible substrates, and each thin film transistor (TFT) includes the first inorganic layer and the second inorganic layer,
First inorganic layer is set adjacent to the flexible substrates, first inorganic layer, second inorganic layer, the planarization layer
Successively in being stacked, the electrode layer is arranged on the planarization layer and is connected with the thin film transistor (TFT), adjacent thin
The buffer area through first inorganic layer and second inorganic layer is equipped between film transistor.
A kind of manufacture method of display panel, it comprises the following steps：
Flexible substrates are provided；
Form multiple thin film transistor (TFT)s in deposition in the flexible substrates, the thin film transistor (TFT) include the first inorganic layer and
Second inorganic layer, first inorganic layer is between the flexible substrates and second inorganic layer；
It is etched between adjacent thin film transistor (TFT), so as to be formed through first inorganic layer and second nothing
The buffer area of machine layer；
In forming planarization layer on second inorganic layer；And
In forming electrode layer on the planarization layer, the electrode layer is connected with the thin film transistor (TFT).
Display panel provided by the invention and its manufacture method, run through institute by being equipped between adjacent thin film transistor (TFT)
The buffer area of the first inorganic layer and second inorganic layer is stated, with first inorganic layer and the second inorganic layer stress
During bending, weaken build-up effect of the stress on first inorganic layer and the second inorganic layer extending direction, so as to
Avoid first inorganic layer and second inorganic layer from rupturing, and prevent the element of the thin film transistor (TFT) is peeled off from coming off, into
And the resistance to bent performance of the display panel is strengthened, also improve the display effect when display panel uses.In addition,
Since the non-TFT regions in the display panel form buffer area, and then the knot of thin film transistor (TFT) is not interfered with
Structure.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the sectional view for the display panel that one embodiment of the invention provides.
Fig. 2 is the flow chart of the manufacture method of display panel provided by the invention.
Fig. 3 is the sectional view of the first precast body formed in 202 steps shown in Fig. 2.
Fig. 4 is the sectional view of the second precast body formed in 203 steps shown in Fig. 2.
Fig. 5 is the sectional view of the 3rd precast body formed in 204 steps shown in Fig. 2.
Fig. 6 is the sectional view of the 4th precast body formed in 205 steps shown in Fig. 2.
Fig. 7 is the flow chart of the manufacture method for the display panel that further embodiment of this invention provides.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment, belongs to the scope of protection of the invention.
Referring to Fig. 1, it is a kind of display panel 10 provided in an embodiment of the present invention.The display panel 10 includes flexible base
Bottom 11, multiple thin film transistor (TFT)s 13 (one is exemplarily only shown in figure), tack coat 15, planarization layer 17 and electrode layer 19.
Certainly, the display panel 10 further includes other necessary or inessential element, such as capacitance electronic component etc., to save space,
Therefore not to repeat here.
Multiple thin film transistor (TFT)s 13 are in array and are arranged at intervals in the flexible substrates 11.The thin film transistor (TFT) 13 wraps
Include the first inorganic layer 131 and the second inorganic layer 133.The flexible substrates 11, first inorganic layer 131 and described second inorganic
Layer 133 is in being stacked, and first inorganic layer 131 is between the flexible substrates 11 and second inorganic layer 133.
It is equipped between adjacent thin film transistor (TFT) 13 and runs through first inorganic layer 131 and second inorganic layer 133
Buffer area 14.The buffer area 14 is used to bend in first inorganic layer 131 and 133 stress of the second inorganic layer
When, weaken build-up effect of the stress on first inorganic layer 131 and 133 extending direction of the second inorganic layer, so as to
Enough avoid first inorganic layer 131 and second inorganic layer 133 from rupturing, and prevent the element of the thin film transistor (TFT) 13 from shelling
From coming off, and then strengthen the bent performance of the display panel 10.In the present embodiment, the buffer area 14 is hole, institute
The other end of the aperture of buffer area 14 from one end of the neighbouring flexible substrates 11 towards the buffer area 14 is stated to increase, with
Reach preferable buffering effect when the display panel 10 is bent.In one embodiment, the buffer area 14 can be set
For the linear groove extended along a direction, width of the buffer area 14 adjacent to described 11 one end of flexible substrates is less than institute
State width of the buffer area 14 away from described 11 one end of flexible substrates；In one embodiment, the buffer area 14 can be set
For the groove of bending.Certainly, in other embodiments, the buffer area 14 can be set in other pattern forms, such as
Triangle.
The tack coat 15 is formed between second inorganic layer 133 and the planarization layer 17, the tack coat 15
Cover but be not filled with the buffer area 14, for preventing in the manufacturing process of the display panel 10, the planarization layer
17 enter the buffer area 14.In the present embodiment, the tack coat 15 is attached at by laminator (not shown) during fabrication
On second inorganic layer 133.Further, the tack coat 15 enhances the intensity of the display panel 10.It is described flat
Change layer 17 to be made of organic material.It is appreciated that the tack coat 15 can be resinoid bond, and certainly, the tack coat 15
Can also by other can photocuring and have bond properties material be made.
Further, the thin film transistor (TFT) 13 further includes active layer 130, source electrode 135, drain electrode 137 and grid 139.This
In embodiment, first inorganic layer 131 is gate insulator, and second inorganic layer 133 is dielectric layer, the active layer
130 are arranged between the flexible substrates 10 and first inorganic layer 131, and the drain electrode 137 and the source electrode 135 pass through connection
Hole 16 is connected with the active layer 130, and the drain electrode 137 and the source electrode 135 are arranged in second inorganic layer 133 and described
First inorganic layer 131 and expose outside second inorganic layer 133.The tack coat 15 covers the source electrode 135.The grid
139 on first inorganic layer 131, and second inorganic layer 133 covers the grid 139.It is appreciated that it can also incite somebody to action
Grid 139 is arranged on active layer 130, and first inorganic layer 131 covers the grid 139, will the thin film transistor (TFT)
13 are arranged to bottom grating structure.
The planarization layer 17 and the tack coat 15 are equipped with perforative connecting hole 18.The connecting hole 18 is located at the leakage
The top of pole 137.In present embodiment, the aperture of the connecting hole 18 is by the connecting hole 18 adjacent to second inorganic layer
The other end of 133 one end towards the connecting hole 18 increases.
The electrode layer 19 is arranged in the connecting hole 18 and then is electrically connected with the drain electrode 137.Due to the tack coat
15 cover but are not filled with the buffer area 14, and then the planarization layer 17 during manufacture can be avoided to enter the buffer area
14 so that the drain electrode 137 and the electrode layer 19 can form good electrical contact.
If it is appreciated that the planarization layer 17 is solid-state when manufacturing, it is convenient to omit the tack coat 15.I.e. a kind of display
Panel, it includes flexible substrates, multiple thin film transistor (TFT)s, planarization layer and electrode layer.The multiple thin film transistor (TFT) interval is set
It is placed in the flexible substrates, each thin film transistor (TFT) includes the first inorganic layer and the second inorganic layer, the first inorganic layer position
Between the flexible substrates and second inorganic layer.It is the flexible substrates, first inorganic layer, described second inorganic
Layer, the planarization layer, the electrode layer are cascading.The electrode layer be arranged on the planarization layer on and with it is described thin
Film transistor connects, and is equipped between adjacent thin film transistor (TFT) through the slow of first inorganic layer and second inorganic layer
Rush region.
Referring to Fig. 2, the present invention also provides a kind of manufacture method of display panel, the manufacture method includes following step
Suddenly：
201, there is provided flexible substrates 11 (refer to Fig. 3).
202, form multiple thin film transistor (TFT)s 13 in deposition in the flexible substrates 11, the thin film transistor (TFT) 13 includes the
One inorganic layer 131 and the second inorganic layer 133, first inorganic layer 131 are located at flexible substrates 11 and described second inorganic
Between layer 133.Fig. 3 is the sectional view of the first precast body 20 of the display panel formed in 202 steps shown in Fig. 2.
Further, the thin film transistor (TFT) 13 further includes active layer 130, source electrode 135, drain electrode 137 and grid 139.This
In embodiment, first inorganic layer 131 is gate insulator, and second inorganic layer 133 is dielectric layer, the active layer
130 are arranged in the flexible substrates 11, and the drain electrode 137 and the source electrode 139 are arranged on the active layer 130 and are arranged in described
Second inorganic layer 133 and first inorganic layer 131 and expose outside second inorganic layer 133.The grid 137 is positioned at described
On first inorganic layer 131, second inorganic layer 133 covers the grid 139.Specifically, in shape in the flexible substrates 11
Into the active layer 130, in forming the first inorganic layer 131 on the active layer 130, formed on first inorganic layer 131
The grid 139, forms intercommunicating pore 16 on second inorganic layer 133, the source is formed on second inorganic layer 133
Pole 135 and the drain electrode 137, the source electrode 135 and the drain electrode 137 are connected by the intercommunicating pore 16 and the active layer 130
Connect.
It is appreciated that grid 139 can also be arranged on active layer 130, first inorganic layer 131 covers the grid
Pole 139, will the thin film transistor (TFT) 13 be arranged to bottom grating structure.
203, referring to Fig. 4, being etched between adjacent thin film transistor (TFT) 13, so as to be formed through first nothing
The buffer area 14 of machine layer 131 and second inorganic layer 133.Fig. 4 is the display panel formed in 203 steps shown in Fig. 2
The sectional view of second precast body 30.
The buffer area 14 is used to, when first inorganic layer 131 and 133 stress of the second inorganic layer are bent, cut
Build-up effect of the weak stress on first inorganic layer 131 and 133 extending direction of the second inorganic layer, so as to avoid
First inorganic layer 131 and second inorganic layer 133 rupture, and prevent the element of the thin film transistor (TFT) 13 is peeled off from taking off
Fall, and then strengthen the bendable folding endurance of the display panel.In the present embodiment, the buffer area 14 is hole, the buffering area
The other end of the aperture in domain 14 from one end of the neighbouring flexible substrates 11 towards the buffer area 14 increases, with described aobvious
Show and reach preferable buffering effect when panel 10 is bent.In another embodiment, the buffer area 14 could be provided as along certain
The linear groove of one direction extension, width of the buffer area 14 adjacent to described 11 one end of flexible substrates are less than the buffering
Width of the region 14 away from described 11 one end of flexible substrates；In another embodiment, the buffer area 14 could be provided as curved
Roll over the groove of shape.Certainly, in other embodiments, the buffer area 14 can be set in other pattern forms, such as triangle
Shape.
204, referring to Fig. 5, forming tack coat 15 in second inorganic layer 133.The tack coat 15 is covered but not filled out
Fill the buffer area 14.Fig. 5 is the sectional view of the 3rd precast body 40 of the display panel formed in 204 steps shown in Fig. 2.
The tack coat 15 is attached on second inorganic layer 133 by laminator (not shown).The tack coat 15
Cover the drain electrode 137 and the source electrode 135.It is appreciated that the tack coat 15 can be resinoid bond, it is certainly, described
Tack coat 15 can also by other can photocuring and have bond properties material be made.It is appreciated that can not be by described
Tack coat 15, is formed on second inorganic layer 133 by laminator pad pasting using artificial or other means.
205, referring to Fig. 6, in forming planarization layer 17 on the tack coat 15, the planarization layer 17 is away from described soft
Property substrate 11 is set.In the present embodiment, the planarization layer 17 is formed at by way of coating on the tack coat 15.Fig. 6
It is the sectional view of the 4th precast body 50 of the display panel formed in 205 steps shown in Fig. 2.The planarization layer 17 is by organic material
Material is made.
206, referring to Fig. 1, in forming connecting hole 18 on the planarization layer 17, the connecting hole 18 is through described
Planarization layer 17 and the tack coat 15, the connecting hole 18 is positioned at the top of the drain electrode 137.
207, form electrode layer 19 in the planarization layer 17 deposition, the electrode layer 19 be arranged in the connecting hole 18 into
And it is electrically connected with the drain electrode 137.
Display panel provided by the invention and its manufacture method, are run through by being equipped between adjacent thin film transistor (TFT) 13
The buffer area 14 of first inorganic layer 131 and second inorganic layer 133, with first inorganic layer 131 and described
When second inorganic layer, 133 stress is bent, weaken stress in first inorganic layer 131 and 133 side of extension of the second inorganic layer
Upward build-up effect, so as to avoid first inorganic layer 131 and second inorganic layer 133 from rupturing, and prevents
The element of the thin film transistor (TFT) 13, which is peeled off, to come off, and then strengthens the bendable folding endurance of the display panel 10, also improves institute
State display effect when display panel 10 uses.Further, since in the 13 region shape of non-thin film transistor (TFT) of the display panel 10
Into buffer area 14, and then the structure of thin film transistor (TFT) 13 is not interfered with, facilitate the manufacture of the display panel.What is more,
The tack coat 15 is formed between second inorganic layer 133 and the planarization layer 17, and the tack coat 15 covers described
Buffer area 14, for preventing in the manufacturing process of the display panel 10, the planarization layer 17 enters the buffering area
Domain 14.In the present embodiment, the tack coat 15 is attached at second inorganic layer 133 by laminator (not shown) during fabrication
On.Further, the tack coat 15 enhances the intensity of the display panel 10.
If it is appreciated that during the display panel 10 is manufactured, solid-state material is taken to manufacture the planarization layer,
Step 204 is can be omitted, referring to Fig. 7, the manufacture method of another kind display panel provided by the invention, the manufacture method bag
Include following steps：
701, there is provided flexible substrates.
702, form multiple thin film transistor (TFT)s in deposition in the flexible substrates.It is inorganic that the thin film transistor (TFT) includes first
Layer and the second inorganic layer, first inorganic layer is between the flexible substrates and second inorganic layer.
703, it is etched between adjacent thin film transistor (TFT), so as to be formed through first inorganic layer and described
The buffer area of two inorganic layers.
704, in forming planarization layer on second inorganic layer, the planarization layer covers but is not filled with the buffering area
Domain.
705, in forming connecting hole on the planarization layer.The connecting hole runs through the planarization layer, the connecting hole
Positioned at the top of the drain electrode.
706, in forming electrode layer on the planarization layer, the electrode layer passes through the connecting hole and the film crystal
Pipe connects.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
Enclose, therefore equivalent variations made according to the claims of the present invention, it is still within the scope of the present invention.
Claims (10)
1. a kind of display panel, it is characterised in that the display panel includes flexible substrates, multiple thin film transistor (TFT)s, planarization
Layer and electrode layer, the multiple thin film transistor (TFT) are arranged at intervals in the flexible substrates, and each thin film transistor (TFT) includes first
Inorganic layer and the second inorganic layer, the flexible substrates, first inorganic layer, second inorganic layer, the planarization layer according to
Secondary is in be stacked, and the electrode layer is arranged on the planarization layer and is connected with the thin film transistor (TFT), in adjacent film
The buffer area through first inorganic layer and second inorganic layer is equipped between transistor.
2. display panel as claimed in claim 1, it is characterised in that the display panel further includes tack coat, the bonding
Between second inorganic layer and the planarization layer, the tack coat covers but is not filled with the buffer area layer.
3. display panel as claimed in claim 2, it is characterised in that the planarization layer and the tack coat are equipped with and run through
Connecting hole, the electrode layer is electrically connected by the connecting hole with the thin film transistor (TFT).
4. the display panel as described in claims 1 to 3 any one, it is characterised in that the buffer area is hole.
5. display panel as claimed in claim 4, it is characterised in that the aperture of the buffer area is from adjacent to the flexible base
The other end of the one end at bottom towards the buffer area increases.
6. the display panel as described in claims 1 to 3 any one, it is characterised in that the buffer area is groove.
7. a kind of manufacture method of display panel, it comprises the following steps：
Flexible substrates are provided；
Multiple thin film transistor (TFT)s are formed in deposition in the flexible substrates, the thin film transistor (TFT) includes the first inorganic layer and second
Inorganic layer, first inorganic layer is between the flexible substrates and second inorganic layer；
It is etched between adjacent thin film transistor (TFT), so as to be formed through first inorganic layer and second inorganic layer
Buffer area；
In forming planarization layer on second inorganic layer；And
In forming electrode layer on the planarization layer, the electrode layer is connected with the thin film transistor (TFT).
8. manufacture method as claimed in claim 7, it is characterised in that the step being etched between adjacent thin film transistor (TFT)
After rapid, the manufacture method further includes：Second inorganic layer forms tack coat the step of, tack coat covering but do not fill out
Fill the buffer area.
9. manufacture method as claimed in claim 8, it is characterised in that the tack coat is attached at described second by laminator
On inorganic layer.
10. manufacture method as claimed in claim 8, it is characterised in that in formation planarization layer on second inorganic layer
After step, before the step of forming the electrode layer on the planarization layer, the manufacture method is further included in the planarization
The step of forming connecting hole on layer, the connecting hole runs through the planarization layer and the tack coat, and the connecting hole is located at institute
The top of drain electrode is stated, the electrode layer is arranged in the connecting hole and then is electrically connected with the drain electrode of the thin film transistor (TFT).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711077377.7A CN107910334A (en) | 2017-11-06 | 2017-11-06 | Display panel and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711077377.7A CN107910334A (en) | 2017-11-06 | 2017-11-06 | Display panel and its manufacture method |
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| Publication Number | Publication Date |
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| CN107910334A true CN107910334A (en) | 2018-04-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711077377.7A Pending CN107910334A (en) | 2017-11-06 | 2017-11-06 | Display panel and its manufacture method |
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| WO2021036176A1 (en) * | 2019-08-30 | 2021-03-04 | 武汉华星光电半导体显示技术有限公司 | Array substrate and display device |
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| CN104795403A (en) * | 2015-04-16 | 2015-07-22 | 京东方科技集团股份有限公司 | Flexible substrate, manufacturing method thereof and display device |
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|---|---|---|---|---|
| CN108987418A (en) * | 2018-09-11 | 2018-12-11 | 惠科股份有限公司 | Array substrate, preparation method thereof and display device |
| WO2021036176A1 (en) * | 2019-08-30 | 2021-03-04 | 武汉华星光电半导体显示技术有限公司 | Array substrate and display device |
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