CN107908074A - Photomask structure, the methods and applications of via are formed on negativity photoresist figure - Google Patents
Photomask structure, the methods and applications of via are formed on negativity photoresist figure Download PDFInfo
- Publication number
- CN107908074A CN107908074A CN201711487314.9A CN201711487314A CN107908074A CN 107908074 A CN107908074 A CN 107908074A CN 201711487314 A CN201711487314 A CN 201711487314A CN 107908074 A CN107908074 A CN 107908074A
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- CN
- China
- Prior art keywords
- slit
- photomask structure
- negativity photoresist
- light shielding
- shielding part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Abstract
This application discloses a kind of photomask structure, methods and applications that via is formed on negativity photoresist figure, the photomask structure includes light shielding part corresponding with via, each light shielding part defines a center shading region and is distributed in the peripheral shading area of center shading region surrounding respectively, the peripheral shading area has the slit of multiple hollow outs up and down at least one radial direction array distribution of light shielding part, and the slit width meets：bn＞ bn+1, wherein, bnAnd bn+1The width of respectively two neighboring slit, and bnRelatively described bn+1Slit away from the center shading region.The present invention passes through the slit for multiple hollow outs that array is opened up on light shielding part; improved the light exposure of hole site; to form the gradient relaxed in via edges; improve the electrical connection quality between pixel electrode and thin film transistor (TFT) metal layer signal wire; the film breakage of processing procedure protective layer after reducing at the same time, improves product quality and yield.
Description
Technical field
This application involves liquid crystal display device process technique field, is formed more particularly to one kind on negativity photoresist figure
Photomask structure, the methods and applications of via.
Background technology
At present, in order to improve the aperture opening ratio of liquid crystal display panel, parasitic capacitance effect, more and more liquid crystal displays are reduced
Color film is integrally disposed in array base palte side by panel product, i.e., using COA (Color Filter On Array) technology.With
The conventional art that color film is located on color membrane substrates with black matrix is compared, it is inclined when COA types array base palte is without the concern for box
Difference, therefore can block gate line, data cable and film crystal pipe unit etc. ensureing black matrix and need the structure of shading
Under the premise of, the appropriate width for reducing black matrix, so as to improve aperture opening ratio.
COA type array base paltes, matcoveredn, color film layer, pixel electricity are stacked gradually on the array of its thin film transistor (TFT) T10
Pole, and via is offered in color film layer, to realize the electrical connection between pixel electrode and the signal wire of metal material.In reality
Production process in, coordinate negativity photoresist using the pattern of light shield (Mask) to make the via in the color film layer.Negativity light
The characteristic of resistance be the region that is irradiated by light will not developed liquid remove, without the region that is irradiated by light then can developed liquid remove,
This is just the opposite with the characteristic of positivity photoresist.
COA products need to form via on color blocking figure by the method for weak exposure, but during the weak exposure of color blocking, color blocking crosslink material
Reaction is incomplete, and material character is unstable, and product reliability is poor, and it is abnormal easily to form bubble.If increase exposure capability, it will lead
Coloring hindered that hole site slope surface is excessively steep, causes the rupture of membranes of upper strata protective layer, also results in bubble or image retention problem.
With reference to shown in Fig. 1 and Fig. 2, multiple light shielding parts 101, each light shielding part one in the prior art, on light shield are provided with
101 correspond to the top for intending being formed via 201 in color blocking figure respectively, and 101 surface of light shielding part is continuous, completely light tight, it exists
The problem of include at least：The thickness of coloured silk film layer and the gradient (Taper) are not easily controlled at via, and the gradient is steeper, easily causes
Pixel electrode in via is broken, and causes the electrical connection between pixel electrode and the signal wire of metal material bad, so that
The display for product occur is bad.To ensure that good electrical connection just needs the via of manufactured size bigger, this can undoubtedly be reduced
Pixel aperture ratio, and the too big situation of via is easy to cause gas and easily leaks after to box processing procedure because of vibrations, and spread
To liquid crystal layer, so as to produce visionary hope (Bubble) and form black group, display effect is influenced.
The content of the invention
It is an object of the invention to provide a kind of photomask structure that via is formed on negativity photoresist figure, method and answer
With to overcome deficiency of the prior art.
To achieve the above object, the present invention provides following technical solution：
The embodiment of the present application discloses a kind of photomask structure that via is formed on negativity photoresist figure, including corresponding with via
Light shielding part,
Each light shielding part defines a center shading region and is distributed in the periphery screening of center shading region surrounding respectively
Light area,
The peripheral shading area has the slit of multiple hollow outs up and down at least one radial direction array distribution of light shielding part,
The slit width meets：
bn＞ bn+1
Wherein, bnAnd bn+1The width of respectively two neighboring slit, and bnRelatively described bn+1Slit away from the center
Shading region.
Preferably, formed above-mentioned on negativity photoresist figure in the photomask structure of via, the slit will be described outer
The spacer region that shading region is separated into multiple shadings is enclosed, the spacer region meets：
an＞ an+1
Wherein, anAnd an+1The width of respectively two neighboring spacer region, and anRelatively described an+1Spacer region away from described
Center shading region.
Preferably, formed above-mentioned on negativity photoresist figure in the photomask structure of via, 1≤an/an+1≦1.5。
Preferably, formed above-mentioned on negativity photoresist figure in the photomask structure of via, 1≤an/bn≤ 1.3,
Wherein, anAnd bnFor adjacent slit and spacer region.
Preferably, formed above-mentioned on negativity photoresist figure in the photomask structure of via, 1≤bn/bn+1≦1.5。
Preferably, formed above-mentioned on negativity photoresist figure in the photomask structure of via, in the peripheral shading area
Multiple annular slits are distributed with.
Preferably, formed above-mentioned on negativity photoresist figure in the photomask structure of via, it is multiple annular described narrow
Seam is coaxially disposed with the center shading region.
Preferably, formed above-mentioned on negativity photoresist figure in the photomask structure of via, the material of the light shielding part
Selected from chromium or titanium dioxide.
Correspondingly, disclosed herein as well is a kind of method that via is formed on negativity photoresist figure, including：
Intend being formed the top of via in negativity photoresist figure, be correspondingly arranged the light shielding part；
Exposure；
Development.
Form the application of via in color blocking layer in COA substrates disclosed herein as well is a kind of photomask structure.
Compared with prior art, the advantage of the invention is that：The present invention is engraved by opening up the multiple of array on light shielding part
Empty slit, improved the light exposure of hole site, to form the gradient relaxed in via edges, improves pixel electrode and film is brilliant
Electrical connection quality between body pipe metal layer signal wire, at the same after reducing processing procedure protective layer film breakage, improve product quality and good
Rate.
Brief description of the drawings
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in application, for those of ordinary skill in the art, without creative efforts,
Other attached drawings can also be obtained according to these attached drawings.
Fig. 1 show the structure diagram of light shielding part in light shield in the prior art；
Fig. 2 show the side view of light shielding part in the prior art and its corresponding via；
Fig. 3 show in the specific embodiment of the invention structure diagram of light shielding part in light shield；
Fig. 4 show the side view of light shielding part and its corresponding via in the specific embodiment of the invention；
Fig. 5 show the structure diagram of slit in one embodiment of the invention；
Fig. 6 show the structure diagram of COA substrates in the specific embodiment of the invention.
Embodiment
Technical scheme is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's all other embodiments obtained without making creative work, belong to the scope of protection of the invention.
In the description of the present invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Easy to describe the present invention and simplify description, rather than instruction or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for description purpose, and it is not intended that instruction or hint relative importance.
In the description of the present invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or be electrically connected；It can be directly connected, can also be indirectly connected by intermediary, Ke Yishi
Connection inside two elements.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
With reference to shown in Fig. 6, in one embodiment, the COA substrates 300 that this case is applicable in include tft layer 301 and
The first insulating protective layer 302, color blocking layer 303,304 and of the second insulating protective layer being sequentially formed on tft layer 301
Pixel electrode layer 305.
Tft layer 301 includes the first metal layer 3011, gate insulator 3012, semiconductor layer 3013, Yi Ji
Two metal layers 3014, grid of the first metal layer 3011 as thin film transistor (TFT), second metal layer 3014 are used as thin film transistor (TFT)
Source electrode and drain electrode.
This case tft layer is made of conventional semiconductor processing procedure, its technique and structure can use it is any it is disclosed simultaneously
The prior art understood by those skilled in the art, this case no longer specifically repeat.
Offer via 3031 in color blocking layer 303, pixel electrode layer 305 is formed at the side wall of via 3031 and brilliant with film
The second metal layer (source electrode) of body pipe is electrically connected.
In a preferred embodiment, pixel electrode layer 305 is ITO.
In order to improve the electrical connection quality of the signal between pixel electrode and second metal layer, via is preferably a taper
Hole, specifically, gradually property slows down the slope surface at its edge.
It should be noted that in certain embodiments, the part edge of via can use gently sloping surface, to ensure at least
Partial electrical connection quality, the slope surface at other edges can be relatively steep.
But in a preferred embodiment, the section of via is circular, buffering suface of its edge formed with the identical gradient.
In order to make above-mentioned via, this case additionally provides a kind of photomask structure.
With reference to shown in Fig. 3 and Fig. 4, photomask structure includes light shielding part 401 corresponding with via 3031, each light shielding part 401
Definition has a center shading region 4011 and is distributed in the peripheral shading area 4012 of center shading region surrounding, peripheral shading respectively
Area 4012 has the slit 4013 of multiple hollow outs up and down, 4013 width of slit at least one radial direction array distribution of light shielding part
Meet：
bn＞ bn+1
Wherein, bnAnd bn+1The width of respectively two neighboring slit, and bnWith respect to bn+1Slit away from center shading region.
In the technical solution, by narrow slit structure, corresponding to hole site can preferably be exposed, and reliability has carried
Rise, meanwhile, it is more that the top of via edges position obtains energy, and it is relatively few that lower part obtains energy, can preferably be formed more slow
The slope surface of sum, the film breakage of processing procedure protective layer after reduction.
Further, peripheral shading is distinguished the spacer region 4014 for being divided into multiple shadings by slit 4013, and spacer region 4014 is full
Foot：
an＞ an+1
Wherein, anAnd an+1The width of respectively two neighboring spacer region, and anWith respect to an+1Spacer region away from center shading
Area.
In a preferred embodiment, 1≤an/an+1≦1.5。
In a preferred embodiment, 1≤an/bn≤ 1.3, wherein, anAnd bnFor adjacent slit and spacer region.
In a preferred embodiment, 1≤bn/bn+1≦1.5。
In one embodiment, multiple annular slits are distributed with peripheral shading area 4012.The plurality of annular slit with
Center shading region is coaxially disposed.
In a preferred embodiment, the material of light shielding part 401 is selected from chromium or titanium dioxide.
With reference to shown in Fig. 5, in order to form the slope surface of part mitigation, slit can be along with special diameter direction array distribution
Strip crevice or arc shaped slits.
Correspondingly, the via part edge formed is relatively steep, but the embodiment can equally improve pixel electrode
With the electrical connection quality between thin film transistor (TFT) metal electrode.
In one embodiment, light shielding part could be provided as rectangle, correspondingly, center shading region, peripheral shading area and narrow
Seam is disposed as rectangle.
In other embodiments, light shielding part may be arranged as circular, regular polygon or irregular shape, this case are simultaneously unlimited
System.
In conclusion the photomask structure of this case, by opening up a plurality of slit of optical grating construction in light shielding part, according to spreading out for light
Penetrate principle, after the barrier through slit or aperture etc different degrees of curved scattered propagation can occur for light, light and shade bar occur
The diffraction pattern of grain pattern, and the border of light and shade striped is not sharp keen, and light and dark state is presented, meanwhile, the energy of light
Intensity also can gradual change.
By a plurality of annular hollow out slit, exposure light by the hollow out slit diffraction will occur for the present invention, produce
It is raw to propagate reverse curved scattered and energy intensity gradual change, rather than still along straightline propagation as after existing mask；Exposure
Afterwards, the developed liquid in the region that is not irradiated by light removes, and the region being irradiated by light then will not developed liquid remove so that final system
The gradient of the color film layer via obtained slows down, so that improve the electrical connection quality between pixel electrode and the signal wire of metal material,
Avoid bubble or image retention problem at the same time.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe is described in detail the present invention with reference to foregoing embodiments, it will be understood by those of ordinary skill in the art that：Its according to
Can so modify to the technical solution described in foregoing embodiments, either to which part or all technical characteristic into
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a kind of photomask structure that via is formed on negativity photoresist figure, it is characterised in that including shading corresponding with via
Portion,
Each light shielding part defines a center shading region and is distributed in the peripheral shading of center shading region surrounding respectively
Area,
The peripheral shading area has the slit of multiple hollow outs up and down at least one radial direction array distribution of light shielding part, described
Slit width meets：
bn＞ bn+1
Wherein, bnAnd bn+1The width of respectively two neighboring slit, and bnRelatively described bn+1Slit away from the center shading
Area.
2. the photomask structure according to claim 1 that via is formed on negativity photoresist figure, it is characterised in that described narrow
The peripheral shading is distinguished the spacer region for being divided into multiple shadings by seam, and the spacer region meets：
an＞ an+1
Wherein, anAnd an+1The width of respectively two neighboring spacer region, and anRelatively described an+1Spacer region away from the center
Shading region.
3. the photomask structure according to claim 2 that via is formed on negativity photoresist figure, it is characterised in that 1≤an/
an+1≦1.5。
4. the photomask structure according to claim 2 that via is formed on negativity photoresist figure, it is characterised in that 1≤an/
bn≤ 1.3,
Wherein, anAnd bnFor adjacent slit and spacer region.
5. the photomask structure according to claim 1 that via is formed on negativity photoresist figure, it is characterised in that 1≤bn/
bn+1≦1.5。
6. the photomask structure according to claim 1 that via is formed on negativity photoresist figure, it is characterised in that described outer
Enclose and multiple annular slits are distributed with shading region.
7. the photomask structure according to claim 6 that via is formed on negativity photoresist figure, it is characterised in that Duo Gehuan
The slit of shape is coaxially disposed with the center shading region.
8. the photomask structure according to claim 1 that via is formed on negativity photoresist figure, it is characterised in that the screening
The material in light portion is selected from chromium or titanium dioxide.
A kind of 9. method that via is formed on negativity photoresist figure, it is characterised in that including：
Intend being formed the top of via in negativity photoresist figure, be correspondingly arranged any light shielding part of claim 1 to 8；
Exposure；
Development.
10. any photomask structure of claim 1 to 8 forms the application of via in COA substrates in color blocking layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711487314.9A CN107908074A (en) | 2017-12-29 | 2017-12-29 | Photomask structure, the methods and applications of via are formed on negativity photoresist figure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711487314.9A CN107908074A (en) | 2017-12-29 | 2017-12-29 | Photomask structure, the methods and applications of via are formed on negativity photoresist figure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107908074A true CN107908074A (en) | 2018-04-13 |
Family
ID=61872221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711487314.9A Pending CN107908074A (en) | 2017-12-29 | 2017-12-29 | Photomask structure, the methods and applications of via are formed on negativity photoresist figure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107908074A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803232A (en) * | 2018-05-31 | 2018-11-13 | 云谷（固安）科技有限公司 | Exposure light shield and preparation method thereof, photoresist graphic method and engraving method |
| CN109491219A (en) * | 2019-01-15 | 2019-03-19 | 深圳市华星光电半导体显示技术有限公司 | A kind of mask plate |
| WO2022000478A1 (en) * | 2020-07-03 | 2022-01-06 | 欧菲光集团股份有限公司 | Circuit board manufacturing method and circuit board |
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| CN106773554A (en) * | 2017-03-13 | 2017-05-31 | 武汉华星光电技术有限公司 | Photomask structure and COA type array base paltes |
| JP2017223729A (en) * | 2016-06-13 | 2017-12-21 | 凸版印刷株式会社 | Reflective mask and production method of the same and reflective mask blank |
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| CN103869606B (en) * | 2014-04-04 | 2016-06-08 | 深圳市华星光电技术有限公司 | The making method of exposure light shield and colored filter |
| JP2017223729A (en) * | 2016-06-13 | 2017-12-21 | 凸版印刷株式会社 | Reflective mask and production method of the same and reflective mask blank |
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| CN109491219A (en) * | 2019-01-15 | 2019-03-19 | 深圳市华星光电半导体显示技术有限公司 | A kind of mask plate |
| WO2022000478A1 (en) * | 2020-07-03 | 2022-01-06 | 欧菲光集团股份有限公司 | Circuit board manufacturing method and circuit board |
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Application publication date: 20180413 |