CN107893213A - Siege unit, evaporation source and film formation device - Google Patents
Siege unit, evaporation source and film formation device Download PDFInfo
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- CN107893213A CN107893213A CN201710891342.0A CN201710891342A CN107893213A CN 107893213 A CN107893213 A CN 107893213A CN 201710891342 A CN201710891342 A CN 201710891342A CN 107893213 A CN107893213 A CN 107893213A
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- Prior art keywords
- siege
- receiving portion
- installation portion
- path
- module
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application provides a kind of siege unit, evaporation source and film formation device that can be exchanged with each other.The siege unit of one aspect of the present invention possesses siege main body, at least one the first siege module and at least one the second siege module.Siege main body has multiple regions of each the first path including cooling.First siege module has the first receiving portion and the first installation portion.First receiving portion accommodates the first deposition material, and has alternate path.First installation portion is arranged on the part in multiple regions, and with the third path for making alternate path and the first communication.Second siege module has the second receiving portion and the second installation portion.Second receiving portion accommodates the second deposition material.Second installation portion is arranged on the another part in multiple regions, and cuts off the second receiving portion and the connection of the first path, and for the regional in multiple regions, has with the first installation portion and exchange shape.
Description
Technical field
The present invention relates to siege unit, evaporation source and the film formation device for evaporating deposition material.
Background technology
As the vapor deposition source of film formation device, the siege for possessing multiple siege modules be present.For example, in multiple siege modules
Each siege module accommodate deposition material.Moreover, it is contained in the deposition material of each siege module of multiple siege modules
In selected deposition material evaporated by heated from siege module, and the deposition material is accumulated in substrate.
On siege, from the viewpoint of easy to maintain, there is provided make multiple siege modules each independent and can tear open
The structure of dress (for example, referring to patent document 1).These multiple siege modules are each formed with identical structure.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2015-045063 publications
The content of the invention
Invent problem to be solved
But following situation be present：Different types of deposition material is contained in siege, switching with a collection of middle one side
Siege module while make different types of deposition material from film deposition source evaporate in the case of, the needs according to the characteristic of deposition material
The different siege module of cooling performance.In addition, according to the species of deposition material, the different siege module of cooling performance is produced to each other
The raw needs for mutually changing its quantity.In said structure, in film deposition source, the different siege module of cooling performance each other can not phase
It is interchangeable.
In view of the above circumstances, the siege module different it is an object of the invention to provide cooling performance can be exchanged each other
Siege unit, evaporation source and film formation device.
For solving the scheme of problem
To reach above-mentioned purpose, the siege unit of one aspect of the present invention possesses siege main body, the siege of at least one first
Module and at least one the second siege module.
The siege main body has multiple regions of each the first path including cooling.
The first siege module has the first receiving portion and the first installation portion.First receiving portion accommodates the first deposition material and had
There is alternate path.First installation portion is arranged on the part in the multiple region, and with making the alternate path and described the
The third path of one communication.
The second siege module has the second receiving portion and the second installation portion.Second receiving portion accommodates the second deposition material.The
Two installation portions are arranged on the another part in the multiple region, and cut off the company of second receiving portion and first path
It is logical, and mutually in the regional in the multiple region, the second installation portion has with first installation portion exchanges shape.
Thus, the different siege module of cooling performance can be exchanged with each other each other.
In above-mentioned siege unit, the first siege module is it can also be provided that make first receiving portion and described first
Installation portion is integrated.
Thus, cooling performance is high and removable first siege module is arranged in siege unit.
In above-mentioned siege unit, second receiving portion is container, and second installation portion can be the support container
Plate-shaped member.
Thus, cooling performance is weak and removable second siege module is arranged in siege unit.
In above-mentioned siege unit, the plate-shaped member has the groove relative with the siege main body, and the groove can be with institute
State the first communication.
Thus, cooling performance is weak and removable second siege module is arranged in siege unit.
In above-mentioned siege unit, the second siege module, which can also have, is arranged on second receiving portion and described the
Distance member between two installation portions.
Thus, the heat transfer between the second siege module and second installation portion is adjusted by distance member.
In above-mentioned siege unit, the second siege module, which can also have, to be arranged on second installation portion and covers
At least one of shield member around second receiving portion.
Thus, it is obtained and prevented by shield member from the second siege module, heat radiation.
In addition, the evaporation source of one aspect of the present invention possesses above-mentioned siege unit and electron gun.The electron gun can
By electron beam irradiation in first receiving portion or second receiving portion.
In addition, the film formation device of one aspect of the present invention possesses above-mentioned siege unit, electron gun and vacuum tank.It is described
Vacuum tank accommodates the siege unit and the electron gun.
Invention effect
As described above, according to the present invention, there is provided can mutually be handed over the different siege module of cooling performance each other
The siege unit changed, evaporation source and film formation device.
Brief description of the drawings
Fig. 1 is the integrally-built summary side elevation for the film formation device for representing present embodiment.
Fig. 2A is the approximate vertical view of the siege unit of present embodiment；Fig. 2 B are the general profile charts of the A1-A2 lines along Fig. 2A.
Fig. 3 is the diagrammatic side view of the effect for the siege unit for illustrating present embodiment.
Fig. 4 is the diagrammatic top view of the effect for the siege unit for illustrating present embodiment.
Fig. 5 A are the approximate vertical views of the siege unit of present embodiment；Fig. 5 B are the general profile charts of the A1-A2 lines along Fig. 5 A.
Fig. 6 A are the approximate vertical views of the siege unit of present embodiment.Fig. 6 B are the general profile charts of the A1-A2 lines along Fig. 6 A.
Fig. 7 is the summary side elevation of the variation of the siege unit of present embodiment.
Embodiment
Hereinafter, referring to the drawings, embodiments of the present invention are illustrated.Exist in the drawings and import XYZ axial coordinates
The situation of system.
[being monolithically fabricated for film formation device]
Fig. 1 is the summary side elevation being monolithically fabricated for the film formation device for representing present embodiment.
Film formation device 100 shown in Fig. 1 includes vacuum tank 10, film deposition source (evaporation source) 30 and support frame 60.
Vacuum tank 10 is the vacuum tank that can maintain decompression state.By shape example of the vacuum tank 10 when X-Y plane is cut
Such as it is rectangle.Can vacuum tank 10 set can outside vacuum tank 10 into vacuum tank 10 supply gas gas supply machine
Structure.
Film deposition source 30 is arranged in vacuum tank 10.For example, film deposition source 30 is arranged on to the bottom 10b in vacuum tank 10.Into
Film source 30 has siege unit 20A and electron gun 40.Siege unit 20A can surround to be revolved along the axle center 20c of Z-direction extension
Turn.Siege unit 20A has the multiple siege modules (crucible) that can accommodate deposition material.On the detailed of siege unit 20A
Situation, it is described further below.
Electron gun 40 can be towards siege unit 20A specific siege module irradiating electron beam 41.For example, electron gun 40
It is arranged side-by-side along Y direction and siege unit 20A.Electron gun 40 can also be arranged side-by-side along X-direction and siege unit 20A.
Rotated by siege unit 20A and stop at ad-hoc location, thus select the deposition material irradiated by electron beam 41.
By the deposition material that electron beam 41 irradiates by electron gun 40 in siege unit 20A be heated.Thus, material is deposited
Material is evaporated from siege unit 20A towards support frame 60.In Fig. 1, the deposition material after evaporation is diagrammatically illustrated with line 65
Winged trip scope extension.
In being arranged above for forcibly blocking blocking for the deposition material for flying to swim over to support frame 60 for siege unit 20A
Portion 50.In addition, in film deposition source 30, it can also set and block other occlusion parts (not shown) of electron beam 41 by rotating.
Support frame 60 is arranged in vacuum tank 10.Support frame 60 is relative with film deposition source 30 in the Z-axis direction.Support frame 60 has
There is dome type structure.Support frame 60 can support multiple workpiece W1.For example, workpiece W1 is circular semiconductor wafer.Workpiece W1
Flat shape for example can also be rectangle.
The central part (topmost of dome structure) of support frame 60 links with axle portion 61.Axle portion 61 extends along Z-direction.Branch
Support 60 can rotate around axle portion 61.Axle portion 61 links with the driver element 62 being arranged on the top 10u of vacuum tank 10.Axle portion
61 rotation is controlled by driver element 62.In film formation device 100, can one side rotating support 60, while carrying out to workpiece W1
Film process.
[composition of siege unit]
Fig. 2A is the approximate vertical view of the siege unit of present embodiment.Fig. 2 B are the general profile charts of the A1-A2 lines along Fig. 2A.
Siege unit 20A shown in Fig. 2A and Fig. 2 B possesses siege main body 200, is arranged in siege main body 200 extremely
Few 1 siege module (the first siege module) 210 and at least one siege module (second being arranged in siege main body 200
Siege module) 220.
For example, siege main body 200 is the metal matrixes such as copper (Cu).Siege main body 200, which has, is provided with siege module
Multiple regions 201.Multiple regions 201 are from siege unit 20A axle center 20c with radial configuration.For example, multiple regions 201
Each centered on the 20c of axle center, arranged along siege unit 20A circumferential S1.Wherein, circumferential S1 refer to along using axle center 20c as
The direction of the circumference of the circle at center.Multiple 201 respective flat shapes of region (shape on X-Y plane) are mutually the same.
As an example, from Z-direction during siege unit 20A, region 201 is by extending to stove from axle center 20c
The line R1 and line R2 in bed unit 20A outside, close to axle center 20c circular arc C 1 and positioned at the circle than circular arc C 1 in the outer part
Arc C2 area defined.Wherein, circular arc C 1 or circular arc C 2 are the parts using axle center 20c as the circumference of concentric circle.Line R1
And line R2 is from line obtained from the radius of the radius removal circular arc C 1 of circular arc C 2.In the present embodiment, region 201 is made
Flat shape is sector.But the flat shape in region 201 is not limited to sector.For example, the flat shape in region 201 can also
It is the rectangle of circle, triangle, rectangle etc..In addition, in exemplified 12 regions 201 of Fig. 2A, but it is not limited to this number
Amount.
Regional 201 in multiple regions 201, medium (for example, pure water, the aqueous solution, gas) energy of cooling is set
The path (the first path) 205 of circulation.Path 205 includes path 205a, path 205b and path 205c.For example, path
205a, path 205b and path 205c, which are respectively, can make medium be back to siege again from the upper surface of siege main body 200
The path of the upper surface of main body 200.Moreover, path 205a, path 205b and path 205c are each over adjacent region 201
And formed.The simply schematical description, but be not limited to this shape of path 205 shown in Fig. 2 B.
For example, siege module 210 is the metal container such as copper.
Siege module 210 is with the installation portion 211 (the first installation portion) being arranged in siege main body 200 and positioned at installation portion
Receiving portion 212 (the first receiving portion) on 211.The electron beam 41 projected from electron gun 40 irradiates receiving portion 212.In siege module
210, receiving portion 212 and installation portion 211 are integrally formed.For example, siege module 210 is threadedly secured in siege master by screw 500
The region 201 of body 200.
Receiving portion 212 has the hole portion 212h for accommodating deposition material.In the inside of receiving portion 212, it is provided with for cooling
Flow of media path 215b (alternate path).For example, path 215b returns in the inside of receiving portion 212 around hole portion 212h
Turn.Thus, even if the deposition material in hole portion 212h is heated by electron beam 41, receiving portion 212 also can efficiently be cooled.
Installation portion 211 is arranged on the part in multiple regions 201.For example, at least one installation portion 211 is arranged on multiple areas
The part in domain 201.Thus, the receiving portion 212 being integrally formed with installation portion 211, i.e. at least one siege module 210 is arranged on
The part in multiple regions 201.As an example, shown in Fig. 2A and be each provided with siege module in 9 regions 201
210 state.
For example, the flat shape of installation portion 211 is the shape corresponding with the flat shape in region 201.For example, installation portion
211 can be arranged on multiple regions 201 among any one on.For example, the width of the flat shape of installation portion 211 is from axle center
20c is more then wider towards siege unit 20A outside.
Installation portion 211 has the path 215c (third path) of flow of media for cooling.Path 215c includes path
215ca and path 215cb.Path 215ca and path 215cb connect with path 215b.For example, by the way that installation portion 211 is set
Put in siege main body 200, thus path 215b connects with path 215ca, and path 215b connects with path 215cb.Thus,
Path 205a, path 215ca, path 215b, path 215cb and path 205b are connected with series-like.In addition, shown in Fig. 2 B
Path 215b, 215ca, 215cb are schematic representations, but are not limited to this shape.
It is installation portion 221 (the second installation portion) and upper member that siege module 220, which has the lower member of siege module 220,
That is receiving portion 222 (the second receiving portion).In siege module 220, installation portion 221 and receiving portion 222 are not integrally formed.For example,
Receiving portion 222 is container, and installation portion 221 is the plate-shaped member for supporting receiving portion 222.
Receiving portion 222 is positioned on installation portion 221.For example, a part for receiving portion 222 is with being arranged at installation portion 221
Concave part 221r is fitted together to.For receiving portion 222, the path of cooling is not provided with inside it.Furthermore it is possible in installation portion
Multiple receiving portions 222 are set on 221.Receiving portion 222 has the hole portion 222h for being used for accommodating deposition material.It is contained in hole portion 222h
Deposition material can be different from being contained in hole portion 212h deposition material, can also be with being contained in hole portion 212h deposition material
It is identical.The material of receiving portion 222 includes materials with high melting point, copper, carbon (C), aluminum oxide (AlOx), the boron nitride (BN) such as tungsten (W) etc.
Any one in ceramics.The electron beam 41 projected from electron gun 40 irradiates receiving portion 222.
For the side wall 222w of receiving portion 222, in addition to a part chimeric with concave part 221r, on circumferential S1 with
Receiving portion 212,222 separates.For example, on circumferential S1, the distance between receiving portion 222 and receiving portion 212 or receiving portion 222 with
The distance between receiving portion 222 is longer than adjacent receiving portion 212 and the distance between receiving portion 212.Moreover, to receiving portion 222
Side wall 222w for, in addition to a part chimeric with concave part 221r, do not contacted with miscellaneous part.
Installation portion 221 is arranged in siege main body 200, and is arranged on the another part in multiple regions 201.Thus, at least 1
Individual siege module 220 is arranged on the another part in multiple regions 201.Wherein, the another part in multiple regions 201 refers to multiple areas
The region 201 being provided with domain 201 beyond the region 201 of siege module 210.It is exemplified at 3 for example, in fig. 2
Region 201 is each provided with the state of siege module 220, but is not limited to this quantity.In addition, for example, installation portion 221 passes through spiral shell
Nail 500 is threadedly secured in region 201.The material of installation portion 221 includes materials with high melting point, copper, carbon (C), the aluminum oxide such as tungsten (W)
(AlOx), any one in the ceramics such as boron nitride (BN).
In installation portion 221, it is not provided with surface from it and penetrates to the path of lower surface.Thus, when the sandwiched of installation portion 221
When between receiving portion 222 and siege main body 200, receiving portion 222 and path 205b, 205c connection are cut off.But install
Portion 221 has the groove 225 relative with siege main body 200.
For example, by the way that installation portion 221 is arranged on into region 201, groove 225 connects with path 205.For example, work as installation portion
221 when being arranged on siege main body 200, and path 205b, groove 225 and path 205c are connected with series-like.Thus, in siege main body
200, it is not necessary to the bypass for making path 205b be connected with path 205c.That is, due to the presence of groove 225, from path
205c, which flows through the medium come, can be back to path 205b again.For example, it is assumed that set even in the inside of receiving portion 222 logical
Road, by the way that installation portion 221 is arranged on into region 201, the medium of flowing will not also reach receiving portion 222 in groove 225.In addition,
Groove 225 shown in Fig. 2 B is schematic representation, but is not limited to this shape.
In siege unit 20A, installation portion 221 has mutually for the regional 201 in multiple regions 201 with installation portion 211
Change shape.It is for example, identical with the flat shape of installation portion 211 in X-Y plane, the flat shape of installation portion 221.That is,
The flat shape of installation portion 221 is the shape corresponding with the flat shape in region 201.For example, installation portion 221 can be arranged on
In any one among multiple regions 201.Thereby, it is possible to unload lower mounting portion from the region 201 for being provided with siege module 210
211, and the installation portion 221 of siege module 220 is set in the region 201.In addition, on the contrary, can be from being provided with siege module
Lower mounting portion 221 is unloaded in 220 region 201, and sets installation portion 211 in the region 201.
In addition, in siege unit 20A, to prevent medium from being leaked from each path, siege main body 200 and installation portion 211 it
Between and siege main body 200 and installation portion 221 between use around each path O rings 250.
[effect of siege unit]
Any one in any one and multiple siege modules 220 in siege unit 20A, multiple siege modules 210
Can independently it be unloaded from siege main body 200.Thus, it is possible to easily only replace specific siege module.
Thus, it is easy to siege unit 20A maintenance.
In addition, in siege unit 20A, it is arranged on when by siege module 210 in siege main body 200, and set beside it
During siege module 220, by path 205a, path 215ca, path 215b, path 215cb, path 205b, groove 225 and lead to
Road 205c forms the path of series-like.
Wherein, the receiving portion 212 of siege module 210 is cooled down by the medium flowed in path 215b, 215c.Separately
On the one hand, the receiving portion 222 of siege module 220 does not have the path of cooling.Moreover, to the side wall 222w of receiving portion 222 and
Speech, in addition to a part chimeric with concave part 221r, is not in contact with miscellaneous part.Thus, the cooling with receiving portion 212 is imitated
Fruit is compared, and the cooling effect of receiving portion 222 is weaker.
Wherein, in film forming procedure, situation be present, i.e. by different types of deposition material with a collection of middle receiving
In siege unit 20A, while switching siege module, while evaporating different types of material according to each siege module.It is logical
The process is crossed, for example, forming multilayer film in workpiece W1.In the present embodiment, make with different types of evaporation material in a collection of
Material can select the different siege module of cooling performance from the case that film deposition source is evaporated according to the characteristic of deposition material.
For example, for the deposition material (aluminium (Al), silver-colored (Ag) etc.) low to evaporating temperature, it is relatively low that these materials are contained in cooling effect
In siege module 220.Also, the electron beam 41 of low-power is irradiated these materials, evaporate material.
It is assumed that when the low material of evaporating temperature is contained in the high siege module 210 of cooling effect, these materials itself
It is cooled, it is necessary to high-power electron beam by siege module 210.As a result, manufacturing cost will increase.In addition, in siege mould
In block 220, in addition to the material of low evaporating temperature, the deposition material for being difficult to that alloy is formed with siege module material can also be accommodated.
On the other hand, for the material high to evaporating temperature (titanium (Ti), nickel (Ni), platinum (Pt) etc.), these materials accommodate
In the high siege module 210 of cooling effect.Also, high-power electron beam 41 is irradiated these materials, evaporate material.Its
In, siege module 210 is cooled by medium.Thus, even if putting into high-power electron beam 41, siege module 210 to material
Also will not melt.
In addition, in siege unit 20A, according to the species of deposition material, the different siege module of cooling performance each other it
Between, it can mutually change its quantity.In Fig. 3, Fig. 4 A and Fig. 4 B, this situation is represented.
Fig. 3 is the diagrammatic side view that the effect to the siege unit of present embodiment illustrates.Fig. 4 A and Fig. 4 B is
The diagrammatic top view that effect to the siege unit of present embodiment illustrates.
In fig. 3 it is shown that from the state shown in Fig. 2 B siege module 210 and siege module 220 are replaced after state.
Installation portion 211 has for region 201 and installation portion 221 exchanges shape.Thus, even if replacing siege module 210 and siege mould
Block 220, the groove 225 of installation portion 221 are also connected with the path 205a and path 205b of siege main body 200.On the other hand, installation portion
211 path 215ca is connected with the path 205b of siege main body 200, path 215cb and the siege main body 200 of installation portion 211
Path 205c is connected.
In Fig. 4 A and Fig. 4 B, show and mutually change its quantity between the different siege module of cooling performance
Situation.For example, the species of deposition material is multiple, it is multiple when 1 deposition material wherein is evaporating temperature relatively low material
In siege module, 1 siege module 220 is just enough (Fig. 4 A).On the other hand, the species of deposition material is multiple to evaporate temperature
When the quantity for spending relatively low material is half, the quantity (figure identical with the quantity of siege module 220 of siege module 210 can be made
4B).So, according to siege unit 20A, between the different siege module of cooling performance, its quantity can mutually be changed.
In addition, in siege unit 20A, it is not necessary to carried out siege module 210 adjacent on circumferential S1 each other with cooling tube
Connection.In siege unit 20A, by the way that siege module 210 is arranged on siege unit 20A, so that siege module 210 is logical
Road 215b, 215c connect with the path 205 of siege main body 200.Moreover, by the way that the installation portion 221 of siege module 220 is arranged on
On siege unit 20A, so that the groove 225 of installation portion 221 connects with the path 205 of siege main body 200.
Thus, compared with the situation using cooling tube, the distance of the siege intermodule on circumferential S1 reduces, siege module
210th, 220 intensive configurations are in siege main body 200.As a result, compared with the situation using cooling tube, stove can be arranged on by adding
The quantity of the siege module of bed main body 200.According to siege unit 20A, the selection free degree of deposition material is added.
[variation 1 of siege unit]
Fig. 5 A are the approximate vertical views of the variation of the siege unit of present embodiment.Fig. 5 B are the general of the A1-A2 lines along Fig. 5 A
Slightly sectional view.
In the siege unit 20B shown in Fig. 5 A and Fig. 5 B, siege module 220 also has configuration in receiving portion 222 and installation
Distance member 223 between portion 221.Distance member 223 is conductive.Distance member 223 is plate-shaped member.Distance member
223 material includes any one material in carbon, molybdenum (Mo) etc..
Thereby, it is possible to suppress the heat transfer between receiving portion 222 and installation portion 221.As a result, accommodated in receiving portion 222
During the low material of evaporating temperature, as long as it is sufficient that electron beam 41 of lower power.As a result, the increasing of manufacturing cost can be suppressed
Add.In addition, distance member 223 is conductive.Thus, even if electron beam 41 irradiates the evaporation material being contained in receiving portion 222
Material, electric charge is also difficult to powered in receiving portion 222.In addition, in order to adjust the heat transfer of distance member 223, can be in distance member
Through hole etc. is set.
[variation 2 of siege unit]
Fig. 6 A are the approximate vertical views of the variation of the siege unit of present embodiment.Fig. 6 B are the general of the A1-A2 lines along Fig. 6 A
Slightly sectional view.
In the siege unit 20C shown in Fig. 6 A and 6B, the shield member 224 being arranged on installation portion 221 is also equipped with.Screen
Cover at least a portion that part 224 is arranged on around receiving portion 222.For example, shield member 224 surrounds the week of receiving portion 222
Enclose.Shield member 224 is cylinder-like part.The material of shield member 224 be comprising the materials with high melting point such as tungsten (W), copper, carbon (C),
The container of any one in the ceramics such as aluminum oxide (AlOx), boron nitride (BN).
Thus, even if releasing heat from the deposition material for being contained in receiving portion 222, by shield member 224, to adjacent
The heat radiation of receiving portion 222 is also shielded.In addition, when in the absence of shield member 224, from the evaporation material of the evaporation of receiving portion 222
Material disperses, and there is a possibility that to be attached to electron gun 40.In the present embodiment, shield member 224 is arranged on receiving portion 222
At least a portion of surrounding, electron gun 40 is swum over to so as to prevent deposition material from flying.
[variation 3 of siege unit]
Fig. 7 is the summary side elevation of the variation of the siege unit of present embodiment.Fig. 7 and the A1-A2 lines along Fig. 2A section
It is corresponding.
In the siege unit 20D shown in Fig. 7, bypass of the siege main body 200 with communication paths 205a and path 205b is led to
Road 205d and communication paths 205b and path 205c bypass 205e.In addition, installation portion 221 does not have groove 225.
, can also be by bypass 205e come communication paths 205b and path even if installation portion 221 does not have groove 225
205c.Thus, without forming groove 225 in installation portion 221, installation portion 221 can be manufactured with lower cost.
More than, embodiments of the present invention are illustrated, but the present invention is not limited to above-mentioned embodiment,
It is of course possible to the various changes of addition.
Symbol description
10 vacuum tanks
10b bottoms
10u tops
20A, 20B, 20C, 20D siege unit
20c axle center
30 film deposition sources
40 electron guns
41 electron beams
50 occlusion parts
60 support frames
61 axle portions
62 driver elements
100 film formation devices
200 siege bodies
201 regions
205th, 205a, 205b, 205c path
205e bypass
210 siege modules
211 installation portions
212 receiving portions
212h hole portions
215c, 215ca, 215cb path
220 siege modules
221 installation portions
221r concave parts
222 receiving portions
222h hole portions
222w side walls
223 distance members
224 shield members
225 grooves
250O rings
500 screws
Claims (8)
1. a kind of siege unit, it is characterised in that the siege unit possesses：
Siege main body, it has multiple regions of each the first path including cooling；
At least one first siege module, it has the first receiving portion and the first installation portion, and first receiving portion accommodates first
Deposition material simultaneously has alternate path, and first installation portion is arranged on the part in the multiple region, and described with making
The third path of alternate path and first communication；And
At least one second siege module, it has the second receiving portion and the second installation portion, and second receiving portion accommodates second
Deposition material, second installation portion are arranged on the another part in the multiple region, and cut off second receiving portion and institute
The connection of the first path is stated, and for the regional in the multiple region, second installation portion and the described first installation
Portion, which has, exchanges shape.
2. siege unit according to claim 1, it is characterised in that
The first siege module is arranged to be integrated first receiving portion and first installation portion.
3. siege unit according to claim 1 or 2, it is characterised in that
Second receiving portion is container, and second installation portion is the plate-shaped member for supporting the container.
4. siege unit according to claim 3, it is characterised in that
The plate-shaped member has the groove relative with the siege main body, the groove and first communication.
5. siege unit according to claim 1, it is characterised in that
The second siege module also has distance member of the configuration between second receiving portion and second installation portion.
6. siege unit according to claim 1, it is characterised in that
The second siege module, which also has, to be arranged on second installation portion and covers around second receiving portion
At least one of shield member.
A kind of 7. evaporation source, it is characterised in that
The evaporation source possesses siege unit and electron gun,
The siege unit has：
Siege main body, it has multiple regions of each the first path including cooling；
At least one first siege module, it has the first receiving portion and the first installation portion, and first receiving portion accommodates first
Deposition material simultaneously has alternate path, and first installation portion is arranged on the part in the multiple region, and described with making
The third path of alternate path and first communication；And
At least one second siege module, it has the second receiving portion and the second installation portion, and second receiving portion accommodates second
Deposition material, second installation portion are arranged on the another part in the multiple region, and cut off second receiving portion and institute
The connection of the first path is stated, and for the regional in the multiple region, second installation portion and the described first installation
Portion, which has, exchanges shape,
The electron gun can make the first receiving portion described in electron beam irradiation or second receiving portion.
A kind of 8. film formation device, it is characterised in that
The film formation device possesses siege unit, electron gun and vacuum tank,
The siege unit has：
Siege main body, it has multiple regions of each the first path including cooling；
At least one first siege module, it has the first receiving portion and the first installation portion, and first receiving portion accommodates first
Deposition material and there is alternate path, first installation portion is arranged on the part in the multiple region, and described with making
The third path of alternate path and first communication；And
At least one second siege module, it has the second receiving portion and the second installation portion, and second receiving portion accommodates second
Deposition material, second installation portion are arranged on the another part in the multiple region, and cut off second receiving portion and institute
The connection of the first path is stated, and for the regional in the multiple region, second installation portion and the described first installation
Portion, which has, exchanges shape,
The electron gun can make the first receiving portion described in electron beam irradiation or second receiving portion,
The vacuum tank accommodates the siege unit and the electron gun.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016195499A JP6715739B2 (en) | 2016-10-03 | 2016-10-03 | Hearth unit, evaporation source and film forming equipment |
| JP2016-195499 | 2016-10-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107893213A true CN107893213A (en) | 2018-04-10 |
| CN107893213B CN107893213B (en) | 2019-11-12 |
Family
ID=61802742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710891342.0A Active CN107893213B (en) | 2016-10-03 | 2017-09-27 | Siege unit, evaporation source and film formation device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6715739B2 (en) |
| CN (1) | CN107893213B (en) |
| TW (1) | TWI653354B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11404254B2 (en) * | 2018-09-19 | 2022-08-02 | Varian Semiconductor Equipment Associates, Inc. | Insertable target holder for solid dopant materials |
| US11170973B2 (en) | 2019-10-09 | 2021-11-09 | Applied Materials, Inc. | Temperature control for insertable target holder for solid dopant materials |
| JP6959680B1 (en) | 2020-11-13 | 2021-11-05 | 株式会社シンクロン | Film deposition equipment |
| US11854760B2 (en) | 2021-06-21 | 2023-12-26 | Applied Materials, Inc. | Crucible design for liquid metal in an ion source |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003257943A (en) * | 2002-02-28 | 2003-09-12 | Anelva Corp | Surface treatment device |
| US20090181548A1 (en) * | 2006-04-05 | 2009-07-16 | Toshiki Takahashi | Vertical plasma processing apparatus and method for semiconductor process |
| CN104328377A (en) * | 2014-11-20 | 2015-02-04 | 京东方科技集团股份有限公司 | Evaporation source, film-forming facility and film-forming method thereof |
-
2016
- 2016-10-03 JP JP2016195499A patent/JP6715739B2/en active Active
-
2017
- 2017-09-27 CN CN201710891342.0A patent/CN107893213B/en active Active
- 2017-09-28 TW TW106133330A patent/TWI653354B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003257943A (en) * | 2002-02-28 | 2003-09-12 | Anelva Corp | Surface treatment device |
| US20090181548A1 (en) * | 2006-04-05 | 2009-07-16 | Toshiki Takahashi | Vertical plasma processing apparatus and method for semiconductor process |
| CN104328377A (en) * | 2014-11-20 | 2015-02-04 | 京东方科技集团股份有限公司 | Evaporation source, film-forming facility and film-forming method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201814073A (en) | 2018-04-16 |
| JP2018059134A (en) | 2018-04-12 |
| TWI653354B (en) | 2019-03-11 |
| CN107893213B (en) | 2019-11-12 |
| JP6715739B2 (en) | 2020-07-01 |
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