CN107887304A - Power transistor surface passivation device - Google Patents

Power transistor surface passivation device Download PDF

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Publication number
CN107887304A
CN107887304A CN201711059707.XA CN201711059707A CN107887304A CN 107887304 A CN107887304 A CN 107887304A CN 201711059707 A CN201711059707 A CN 201711059707A CN 107887304 A CN107887304 A CN 107887304A
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reaction tube
dedusting
tube
middle pipe
pipe
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CN201711059707.XA
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CN107887304B (en
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魏广乾
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Chongqing Kaixiyi Electronic Technology Co Ltd
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Chongqing Kaixiyi Electronic Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

The application is related to transistor manufacture field, specifically discloses a kind of power transistor surface passivation device, and it includes reaction tube, the outer tube being sheathed on outside reaction tube and the middle pipe between reaction tube and outer tube；It is dedusting chamber between reaction tube and outer tube；It is dedusting passage between reaction tube and middle pipe, the cross section of dedusting channel middle is shunk, and the upper end of dedusting passage connects with dedusting chamber；The lower end closure of middle pipe, the upper and lower ends of reaction tube are open, middle pipe is rotatablely connected with reaction tube, the lower end of reaction tube connects with the lower end of dedusting passage, diversion fan blade is fixed with the inwall of middle pipe lower end, diversion fan blade is located above reaction tube lower surface, and reaction tube is provided with the dedusting hole connected with dedusting channel middle, is provided with reaction tube and is fixed with reaction tube and be located at the pallet below dedusting hole；The top of reaction tube is provided with lid, and lid is provided with and NH3The air admission hole of source of the gas connection, reaction tube periphery is wound with induction coil.The device can carry out dedusting in reaction tube to table top pipe.

Description

Power transistor surface passivation device
Technical field
The present invention relates to transistor manufacture field, and in particular to a kind of power transistor surface passivation device.
Background technology
I takes charge of the power model transistor of production, is mainly used in low frequency amplification, vibration and mu balanced circuit.It is, in general, that Under conditions of power device typically operates in high voltage, high current, therefore it is required that it possess high pressure, operating current it is big, itself The features such as dissipated power is big, and common power model transistor is by technology due to being limited, generally with small volume, thermal diffusivity Difference, the defect such as chip availability is low, so as to cause unstable product quality, service life is relatively low.Therefore, I, which takes charge of, passes through technology Tackling key problem, using table top manufacturing process and module packaging technique, can make device area be basically unchanged in the case of capacity improve Two to three times, and with more preferable heat dispersion, electrical property, integrated performance, unfailing performance and transient state rejection, so as to effectively Solve the problems such as common power block-transistor small volume, poor radiation, chip availability be low, reach and extend product and use the longevity Life, improve the purpose of product quality.
I takes charge of manufactures power model transistor by using mesa technology, can easily pass punch structure and part Minority carrier life time is controlled to improve the high-frequency low-consumption characteristic that normal transistor is unable to reach.For flat tube, table top pipe Easily device performance is caused to destroy by the contamination of foreign matter, if using conventional passivation film growth technique, it is impossible to The invasion and attack of moisture and impurity are effectively prevented, so as to cause the electrical parameter of tube core unstable, and it is sensitive to temperature change.And use PECVD silicon nitride passivations technology carries out mesa passivation, and because it has, deposition temperature is low, and step coverage is good, the nitridation of growth Silicon structure is fine and close, and needle pore defect is few, has the advantages that good anti-sodium ion contamination and moisture resistance, can effectively improve device Qualification rate and reliability.
At present, when being passivated processing to table top pipe using PECVD silicon nitride passivations technology, need first to the surface of table top pipe Dedusting is carried out, to prevent the impurity, the dust that are adhered to table top pipe surface from influenceing the growth of passivating film；After completing dedusting, NH is passed through3 Gas, and be heated to 300~350 DEG C and be passivated processing.Existing dedusting method is that the surface of table top pipe is entered by air gun Row blowing, to blow down surface dirt；But in the dust on treatment bench facial canal surface, it is impossible in PECVD silicon nitride passivation devices Carry out, to prevent dust residue in PECVD silicon nitride passivation devices；And dedusting is carried out outside PECVD silicon nitride passivation devices, Table top pipe is moved into PECVD silicon nitride passivation devices again, due to being suspended with dust in air, table top pipe is being moved into PECVD During silicon nitride passivation device, also most likely result in dust and adsorb again on table top pipe.
The content of the invention
It is an object of the invention to provide a kind of power transistor surface passivation that dedusting can be carried out inside passivating device Device.
To reach above-mentioned purpose, base case of the invention is as follows：
Power transistor surface passivation device includes reaction tube, the outer tube being sheathed on outside reaction tube, located at reaction tube and outer The motor that middle pipe and driving middle pipe between pipe rotate；It is dedusting chamber between the reaction tube and outer tube, the upper end seal of dedusting chamber Mouthful；Be dedusting passage between the reaction tube and middle pipe, the cross-sectional area of dedusting channel middle be less than dedusting passage both ends and The cross-sectional area of tube cavity is reacted, the upper end of dedusting passage connects with dedusting chamber；The lower end closure of middle pipe, reaction tube up and down Both ends are open, and middle pipe is rotatablely connected with reaction tube, and the lower end of reaction tube connects with the lower end of dedusting passage, middle pipe lower end Diversion fan blade is fixed with inwall, diversion fan blade is located above reaction tube lower surface, and the side wall of reaction tube is provided with leads to dedusting Connection and a diameter of 3-5mm dedusting holes in the middle part of road, interior be provided with of reaction tube are fixed with reaction tube and are located at the pallet below dedusting hole； The top of the reaction tube is provided with lid, and lid is provided with and NH3The air admission hole of source of the gas connection, reaction tube periphery is wound with sensing Coil.
The principle of this programme power transistor surface passivation device is：
Table top pipe is moved on pallet during use, and lid is covered reaction tube upper end open.When motor driven middle pipe During rotation, diversion fan blade will together rotate with middle pipe, then diversion fan blade will blow into dedusting passage, i.e., will in dedusting passage The air-flow flowed up is formed, and the air-flow to flow downward is formed in reaction tube so that reaction tube will be from NH3Suction NH in source of the gas3 Gas.NH3Gas enter reaction tube in will gradually fill reaction tube, so as to by reaction tube air discharge, then table top pipe with NH3Gas directly contacts.
In this programme, because the area of section in the middle part of middle pipe is less than the area of section at both ends so that dedusting passage is formed Venturi tube.When fluid is by the middle part of Venturi tube, because the area of section in the middle part of Venturi tube is less than both ends, and fluid stream It is constant to cross the flow of Venturi tube, therefore fluid is accelerated by flow velocity during Venturi tube middle part, so that in the middle part of Venturi tube Pressure be less than both ends pressure.During middle pipe rotates, the middle part pressure of dedusting passage is small, then by shape in dedusting hole Into the air-flow flowed from reaction tube to dedusting passage, and because the aperture of dedusting hole is smaller, therefore the air-flow stream Jing Guo dedusting hole Speed is larger；And supporting plate is placed exactly in the lower section of dedusting hole, therefore the air-flow for flowing to dedusting hole can siphon away absorption on table top pipe Dust.
After the air in reaction tube is all discharged, induction coil is switched on power, then induction coil can be in reaction tube Portion is heated, the high temperature for making reaction tube be internally formed 300~350 DEG C.So that the surface of table top pipe starts and NH3Gas occurs Deposition reaction is passivated, and forms accessory substance, accessory substance also by the presence of the air-flow of dedusting hole is flowed to rapidly from dedusting In hole discharge reaction tube.
Beneficial effect is caused by this programme：
(1) before table top pipe is passivated, by forming negative pressure at the middle part of dedusting passage, formed in dedusting hole The air-flow flowed from reaction tube to dedusting passage, and because the aperture of dedusting hole is smaller so that by the air-flow velocity of dedusting hole It is larger, so as to siphon away the dust on table top pipe.
(2) surface of table top pipe starts and NH3When gas generation deposition reaction is passivated, some gas pairs will be formed Product, including H2, HCl etc., so as to which these gaseous by-products will be wrapped in table top pipe surface, and dedusting hole accelerates table top pipe surface Gas flowing, then covering and the accessory substance of table top pipe surface can be discharged rapidly, so as to ensure table top pipe and NH3Gas connects Touch, be advantageous to passivating film growth.
(3) because the cross-sectional area of dedusting channel middle is less than the cross-sectional area of reaction tube cavity, therefore dedusting is led to Air-flow velocity in the middle part of road is very fast, and this is slower for the air-flow velocity in reaction tube, and because deposition reaction occurs for table top pipe surface When, required NH3Amount and few, and make NH3In flow regime, primarily to discharge gaseous by-product, make table top pipe with NH3 is fully contacted, and the NH in present apparatus reaction tube3Overall flow velocity is slower, but can still keep very fast around table top pipe Flow velocity；And the NH in reaction tube3Overall flows decrease can then reduce NH3Use.
Preferred scheme one：As the further optimization to base case, it is fixed with the outer wall of the middle pipe positioned at dedusting The flight of intracavitary, porous adsorption layer is removably connected with the inwall of the outer tube.When middle pipe rotates, helical blade will The gas of dedusting intracavitary is driven to be flowed in vortex shape, so as to which the impurity and dust with the gas mixing of dedusting intracavitary will be centrifuged The effect of power, and to peripheric movement absorption on porous adsorption layer, dismantling porous adsorption layer can be purged to dust.
Preferred scheme two：As the further optimization to preferred scheme one, the pallet is annular in shape, and the outer rim of pallet is fixed In reaction tube side wall.Because in reaction tube, the air current flow at dedusting hole is faster, and table top pipe is placed on pallet On, therefore pallet is arranged to annular, table top pipe can be made to be in the faster region of air current flow.And NH3Gas then passes through pallet Middle part flow downward.
Preferred scheme three：As the further optimization to preferred scheme two, the lower end of the outer tube is fixed with tank, outer tube Lower end is stretched into tank.Due to having gas HCl in accessory substance, it is sour gas and soluble in water, thus in the sink plus Enter water, and outer tube is stretched into tank, this can be to gas HCl processing.
Preferred scheme four：As the further optimization to preferred scheme three, the cross-sectional area of the reaction tube cavity is 6-8 times of dedusting channel middle cross-sectional area.So as to make the air-flow velocity of dedusting channel middle much larger than in reaction tube Air-flow velocity, so as to reduce NH as far as possible3Usage amount.
Preferred scheme five：As the further optimization to preferred scheme four, the porous adsorption layer is spongy layer, sponge It is cheap, after spongy layer adsorption capacity reduces, by directly changing spongy layer.
Brief description of the drawings
Fig. 1 is the structural representation of the bright embodiment of this hair power transistor surface passivation device；
Fig. 2 is the enlarged drawing of part A in Fig. 1.
Embodiment
Below by embodiment, the present invention is further detailed explanation：
Reference in Figure of description includes：Frame 10, tank 11, reaction tube 20, lid 21, air admission hole 22, support Disk 23, dedusting hole 24, middle pipe 30, dedusting passage 31, diversion fan blade 32, flight 33, hot channel 34, motor 40, outer tube 50, Spongy layer 51, dedusting chamber 52.
Embodiment is substantially as shown in Figure 1 and Figure 2：
The power transistor surface passivation device of the present embodiment includes frame 10, reaction tube 20, is sheathed on outside reaction tube 20 Outer tube 50, the middle pipe 30 between reaction tube 20 and outer tube 50；Reaction tube 20 and outer tube 50 are each attached in frame 10, in Pipe 30 is rotatablely connected with frame 10, so that middle pipe 30 can rotate relative to reaction tube 20, and rotated provided with driving middle pipe 30 Motor 40.It is dedusting chamber 52 between reaction tube 20 and outer tube 50, the upper end closure of dedusting chamber 52, lower ending opening.Middle pipe 30 from except The opening of the lower end of dirt chamber 52 is stretched into dedusting chamber 52, and dedusting passage 31, dedusting passage 31 are formed between reaction tube 20 and middle pipe 30 The cross-sectional area at middle part is less than the cross-sectional area at the both ends of dedusting passage 31, so that dedusting passage 31 forms venturi Pipe, and the upper end of dedusting passage 31 connects with dedusting chamber 52.The lower end closure of middle pipe 30, the upper and lower ends of reaction tube 20 are opened Mouthful, the lower end of reaction tube 20 connects with the lower end of dedusting passage 31, is fixed with diversion fan blade 32 on the inwall of the lower end of middle pipe 30, leads Stream flabellum 32 is located above the lower surface of reaction tube 20.The side wall of reaction tube 20 be provided with it is some 31 with dedusting passage in the middle part of connect and A diameter of 4mm dedusting hole 24.When motor 40 drives middle pipe 30 to rotate, diversion fan blade 32 will drive gas to flow up, so as to The air-flow flowed up is formed in dedusting passage 31；And due to the lower end closure of middle pipe 30, and the lower end of reaction tube 20 is with removing The lower end connection of dirt passage 31, therefore will form the air-flow to flow downward in reaction tube 20, i.e. air-flow enters by reaction tube 20 Dedusting passage 31 is simultaneously discharged into dedusting chamber 52.
The cross-sectional area at the middle part of dedusting passage 31 is 7 times of the cross-sectional area of the inner chamber of reaction tube 20, i.e., by dedusting The flow velocity of the air-flow at the middle part of passage 31 is 7 times or so by the air-flow velocity in reaction tube 20；So as to make gas in reaction chamber The overall flow velocity of stream is slower, i.e. the pressure at the middle part of dedusting passage 31 is less than the pressure in reaction tube 20, therefore in dedusting hole 24 It is interior to form the air-flow that dedusting passage 31 is flowed to from reaction tube 20；And because the aperture of dedusting hole 24 is small, dedusting passage 31 and reaction Flow velocity in pipe 20 differs greatly, and pressure difference is also big, therefore the flow velocity Jing Guo dedusting hole 24 is also very fast, so that dedusting hole 24 Acted on dust suction.
Pallet 23 in a ring is provided with reaction tube 20, the outer rim of pallet 23 is fixed in the side wall of reaction tube 20, and pallet 23 are located at the lower section of dedusting hole 24.After table top pipe is placed on pallet 23, table top pipe can be made just relative with dedusting hole 24, from And dedusting can be carried out to table top pipe.The top of reaction tube 20 is provided with lid 21, and the upper end of reaction tube 20 can be sealed by lid 21 Opening；And it is provided with lid 21 and NH3The air admission hole 22 of source of the gas connection.When motor 40 drives middle pipe 30 to rotate, then lead Stream flabellum 32 rotates, and now reaction tube 20 can be by NH3NH in source of the gas3In gas sucting reaction pipe 20.The periphery of reaction tube 20 is wound There is induction coil, induction coil, which switches on power, to be internally heated to reaction tube 20, so as to form PECVD nitrogen in reaction tube 20 Environment temperature needed for SiClx passivation.
The flight 33 in dedusting chamber 52 is fixed with the outer wall of middle pipe 30, sponge is connected with the inwall of outer tube 50 Layer 51；When middle pipe 30 rotates, flight 33 rotates simultaneously, then can make to form eddy airstream in dedusting chamber 52, so as to be mingled in gas Dust in body will be subject to centrifugal forces to be separated with gas, and be attracted on spongy layer 51.Because induction coil is to anti- Should the inside of pipe 20 when heating, will be also heated by the gas of reaction tube 20, therefore spiral winding has on the pipeline outer wall of outer tube 50 Hot channel 34, when the device works, cold water is passed through into hot channel 34, so as to be carried out to the gas in dedusting chamber 52 Radiating.The lower end of outer tube 50 is fixed with tank 11, and the lower end of outer tube 50 is stretched into tank 11, when the device works, into tank 11 Water is added, so as to be absorbed to some accessory substances soluble in water；In addition, gas is then exhausted from after water-carrying groove 11, can be right Gas is further cooled, so as to prevent operating personnel from scalding.
The specific work process of the present embodiment power transistor surface passivation device is：
Table top pipe is moved on pallet 23, lid 21 is covered the upper end open of reaction tube 20.Start in the drive of motor 40 Pipe 30 rotates, and diversion fan blade 32 will blow into dedusting passage 31 so that the air-flow flowed up will be formed in dedusting passage 31, And the air-flow to flow downward is formed in reaction tube 20 so that reaction tube 20 will be from NH3Suction NH in source of the gas3Gas.NH3Gas enters Reaction tube 20 will gradually be filled by entering in reaction tube 20, so as to which the air in reaction tube 20 be discharged.In the process that middle pipe 30 rotates In, the middle part pressure of dedusting passage 31 is less than the pressure inside reaction tube 20, therefore is formed in dedusting hole 24 from reaction tube 20 The air-flow flowed to dedusting passage 31, so that dedusting hole 24 acts on dust suction；And 23 layers of annular of pallet and it is located at dedusting The lower section of hole 24 so that table top pipe is in the best region of pick-up performance.After air in reaction tube 20 is all discharged, by the line of induction Circle switches on power, and induction coil is internally heated to reaction tube 20, and by the internal control of reaction tube 20 at 300~350 DEG C.Instead Should be after the internal temperature of pipe 20 reach 300 DEG C, the surface of table top pipe starts and NH3Gas occurs deposition reaction and starts growth of passivation Film, while can also produce simultaneously H2And the gaseous by-product such as HCl.These gaseous by-products are wrapped in table top pipe surface, and dedusting hole 24 can accelerate the gas flowing of table top pipe surface, with rapid discharge covering and the accessory substance of table top pipe surface, make table top pipe and NH3 Gas uniformly contacts, so as to make passivating film homoepitaxial.
Above-described is only embodiments of the invention, and the general knowledge such as known concrete structure and characteristic is not made herein in scheme Excessive description., without departing from the structure of the invention, can be with it should be pointed out that for those skilled in the art Several modifications and improvements are made, these should also be considered as protection scope of the present invention, and these are implemented all without the influence present invention Effect and practical applicability.The scope of protection required by this application should be based on the content of the claims, in specification The records such as embodiment can be used for the content for explaining claim.

Claims (6)

1. power transistor surface passivation device, it is characterised in that：Including reaction tube, the outer tube being sheathed on outside reaction tube, it is located at The motor that middle pipe and driving middle pipe between reaction tube and outer tube rotate；It is dedusting chamber between the reaction tube and outer tube, dedusting The upper end closure of chamber；It is dedusting passage between the reaction tube and middle pipe, the cross-sectional area of dedusting channel middle is less than dedusting Passage both ends and the cross-sectional area for reacting tube cavity, the upper end of dedusting passage connects with dedusting chamber；The lower end closure of middle pipe, instead Should the upper and lower ends of pipe be open, and middle pipe is rotatablely connected with reaction tube, and the lower end of reaction tube connects with the lower end of dedusting passage, Diversion fan blade is fixed with the inwall of middle pipe lower end, diversion fan blade is located above reaction tube lower surface, is set in the side wall of reaction tube Have and connected with dedusting channel middle and a diameter of 3-5mm dedusting holes, be provided with reaction tube and fixed with reaction tube and be located at dedusting hole The pallet of lower section；The top of the reaction tube is provided with lid, and lid is provided with and NH3The air admission hole of source of the gas connection, outside reaction tube Week is wound with induction coil.
2. power transistor surface passivation device according to claim 1, it is characterised in that：It is solid on the outer wall of the middle pipe Surely there is the flight positioned at dedusting intracavitary, porous adsorption layer is removably connected with the inwall of the outer tube.
3. power transistor surface passivation device according to claim 2, it is characterised in that：The pallet is annular in shape, support The outer rim of disk is fixed in reaction tube side wall.
4. power transistor surface passivation device according to claim 3, it is characterised in that：The lower end of the outer tube is fixed There is tank, outer tube lower end is stretched into tank.
5. power transistor surface passivation device according to claim 4, it is characterised in that：The horizontal stroke of the reaction tube cavity Area of section is 6-8 times of dedusting channel middle cross-sectional area.
6. power transistor surface passivation device according to claim 5, it is characterised in that：The porous adsorption layer is Spongy layer.
CN201711059707.XA 2017-11-01 2017-11-01 Power transistor surface passivation device Active CN107887304B (en)

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Application Number Priority Date Filing Date Title
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CN107887304B CN107887304B (en) 2019-09-03

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070084482A1 (en) * 2005-10-18 2007-04-19 Nec Electronics Corporation Apparatus and method for cleaning semiconductor wafer
DE102011119107A1 (en) * 2011-11-22 2013-05-23 Peter Fuchs Device for cleaning ambient air in interior region of closed storage system utilized for storing electronic parts, has dust collectors for cleaning dust particles loaded air that is fed from outside region to inner region of storage system
CN203726282U (en) * 2014-03-16 2014-07-23 王俊凤 Dust removal polishing machine for inspection of metal material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070084482A1 (en) * 2005-10-18 2007-04-19 Nec Electronics Corporation Apparatus and method for cleaning semiconductor wafer
DE102011119107A1 (en) * 2011-11-22 2013-05-23 Peter Fuchs Device for cleaning ambient air in interior region of closed storage system utilized for storing electronic parts, has dust collectors for cleaning dust particles loaded air that is fed from outside region to inner region of storage system
CN203726282U (en) * 2014-03-16 2014-07-23 王俊凤 Dust removal polishing machine for inspection of metal material

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