CN107884809A - Neutron detection negative electrode, neutron detector and neutron detection method - Google Patents
Neutron detection negative electrode, neutron detector and neutron detection method Download PDFInfo
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- CN107884809A CN107884809A CN201711106734.8A CN201711106734A CN107884809A CN 107884809 A CN107884809 A CN 107884809A CN 201711106734 A CN201711106734 A CN 201711106734A CN 107884809 A CN107884809 A CN 107884809A
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
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Abstract
This disclosure relates to which neutron detection technology, discloses a kind of neutron detection negative electrode, neutron detector and neutron detection method, neutron detection negative electrode corresponds to the incidence of neutron and changes release electronics, and then by detecting the electrically realized indirect detection to neutron signal.The neutron detection negative electrode includes：Supporting substrate, electrode layer and neutron absorption layer.Electrode layer is arranged on the supporting substrate；Neutron absorption layer is arranged on the electrode layer opposite side relative with institute supporting substrate, and the neutron absorption layer includes neutron absorption material, and discharges electronics after the neutron absorption material trap neutron.Neutron multiplication detection device also includes vacuum tank dynode and anode；Vacuum tank has entrance window；Electrode layer is covered in the inner surface of vacuum tank entrance window；Neutron absorption layer is covered in the inner surface of electrode layer；Accurately multiplication detection or direct detection, and then realize the sensitive detection to thermal neutron can be carried out to electronics of the neutron by capture layer conversion with this.
Description
Technical field
This invention relates generally to neutron detection technology, thermal neutron can be converted into electronics in particular to one kind
Neutron detection negative electrode, and its detector to conversion electron with multiplication detecting function formed, a kind of and neutron detection
Method.
Background technology
Different from high energy charged particles and high-energy photon, neutron will not occur using coulomb interaction as medium with detector medium
Electromagnetic interaction, ionization or exciting media atom；Also photoelectric effect, Compton scattering etc. will not occur with medium, so,
Neutron is not easy by direct detection, is realized pair generally by the nuclear scattering with the generation of the atomic nucleus of detector medium or nuclear reaction
The detection of neutron.
According to the height of neutron energy, neutron is classified as follows：Kinetic energy is less than 0.002eV, i.e. equivalent temperature is about below 20K
Neutron be cold neutrons；Neutron of the kinetic energy scope between 0.002~0.5eV is classified as thermal neutron；Kinetic energy is 1eV~1keV's
Neutron is epithermal neutron or slow neutron；The kinetic energy of fast neutron is more than 1keV；Neutron of the kinetic energy more than 10MeV is the theory of relativity neutron,
Now the speed of neutron starts to show relativistic effect close to the light velocity.
Common thermal-neutron detector is generally the very high imaging detector of positional precision, not only useful detection area
Small and expensive, being unfavorable for monitor large-area has the ambient field of neutron irradiation.
Above- mentioned information is only used for strengthening the understanding of the background to the present invention, therefore it disclosed in the background section
It can include not forming the information to prior art known to persons of ordinary skill in the art.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step describes in detail.The key that present invention part is not meant to attempt to limit technical scheme claimed is special
Seek peace essential features, do not mean that the protection domain for attempting to determine technical scheme claimed more.
A primary object of the present invention is at least one defect for overcoming above-mentioned prior art, there is provided a kind of energy centering
Son carries out neutron detection negative electrode, neutron detector and the neutron detection method of multiplication detection, and neutron can be turned by the capture layer
The electronics changed carries out accurately multiplication detection or direct detection, and then realize the sensitive detection to thermal neutron.
Another main purpose of the present invention is at least one defect for overcoming above-mentioned prior art, there is provided a kind of high
Sensitivity and extremely low noise neutron detection negative electrode, neutron detector and neutron detection method.
For achieving the above object, the embodiment of the present invention adopts the following technical scheme that：
According to an aspect of the invention, there is provided a kind of neutron detection negative electrode, including thermal capture material, incident heat
The electronics for producing energy direct detection can be changed after neutron, the neutron detection negative electrode includes：Supporting substrate, electrode layer and neutron
Capture layer.Electrode layer is arranged on the supporting substrate；It is relative with institute supporting substrate that neutron absorption layer is arranged at the electrode layer
Opposite side on, the neutron absorption layer includes neutron absorption material, and electricity is discharged after the neutron absorption material trap neutron
Son.Neutron multiplication detection device also includes vacuum tank dynode and anode；Vacuum tank has entrance window；Electrode layer is covered in
The inner surface of vacuum tank entrance window；Neutron absorption layer is covered in the inner surface of electrode layer；Neutron can be carried out with this accurate
Multiplication detection.
According to an embodiment of the present invention, wherein the neutron absorption layer is the coating for the compound for including gadolinium, or
Person is to mix gadolinium resistive coating.
According to an embodiment of the present invention, wherein the supporting substrate material is neutron transmission material；Neutron is from described
Supporting substrate side is incident to the neutron absorption layer, and electronics caused by the neutron absorption layer is to the opposite side of the supporting substrate
Discharge.
According to an embodiment of the present invention, wherein the supporting substrate material is neutron transmission material or neutron shield material
Material；Neutron is incident to the neutron absorption layer from the opposite side of the supporting substrate, and electronics caused by the neutron absorption layer is to institute
The opposite side for stating supporting substrate discharges.
According to an embodiment of the present invention, it is described wherein the neutron absorption layer has the surface resistance of semiconductive thin film
Electrode layer provides voltage for the neutron absorption layer, and then forms electric field, and the electronics of outgoing is collected by the effect of electric field.
According to an embodiment of the present invention, wherein the vacuum tank is glass material；Or the vacuum tank
Entrance window is conductive material, and the entrance window of the electrode layer and the vacuum tank becomes one, and the neutron absorption layer is straight
Connect the incidence end inner surface for taking shape in the vacuum tank.
According to an embodiment of the present invention, wherein in the electrode layer between first dynode, it is provided with
Electron Beam Focusing electric field arrangement.
According to another aspect of the present invention, there is provided a kind of neutron detector, including container, cathode layer and anode；The sun
Extremely single anode or anode array, collect from the neutron detection negative electrode ejected electron；The container accommodates the neutron detection
Negative electrode and the anode.
According to an embodiment of the present invention, wherein the container has an entrance window, the cathode layer be formed at it is described enter
Window inner surface is penetrated, the neutron absorption layer is formed at the cathode layer inner surface, produced after the neutron absorption layer capture neutron
Electronics；The electron multiplication detection structure is located in the vacuum tank, and the electron multiplication detects structure by directly doubling
Detect the electronics, and then indirect detection neutron.
According to an aspect of the present invention, there is provided a kind of neutron multiplication detection method, including step：
Prepare a cathode layer, a neutron absorption layer and the anode positioned at vacuum state；The cathode layer, a neutron absorption
Layer and anode order arrange；
Thermal neutron is captured through the cathode layer by the neutron absorption layer, produces electronics；
The electronics is collected by anode and detected under the cathode layer and the anode collective effect.
According to an embodiment of the present invention, wherein between the anode and the cathode, can also have one or more electronics
Multiplication structure, its current potential is between anode and negative electrode, and if multiple electron multiplication structures, then current potential is between the anode and the cathode
It is uniform to carry out ladder transition.
According to another aspect of the present invention, there is provided a kind of neutron detector, including foregoing neutron detection negative electrode, electricity
Sub- multiplication portion, anode or anode array and container：The electron multiplication portion is used to release from the neutron detection negative electrode
Cascade multiplication；The anode or anode array collect the secondary electron released from the electron multiplication portion；The container holds
Receive the neutron detection negative electrode, the electron multiplication portion and the anode.
As shown from the above technical solution, neutron multiplication detection device of the invention and the advantages of neutron multiplication detection method and
Good effect is：
1. the area of the neutron absorption layer of the neutron detection negative electrode of the embodiment of the present invention can be and specifically used with unrestricted
Detector geometry depend on vacuum technique development；
Carried 2. should be understood that can directly replace with the embodiment of the present invention the photocathode in various photomultipliers
The neutron absorption layer of confession, other techniques are constant, and photomultiplier can be directly converted to neutron-electron multiplier tube；
The performance of 3 this detector depends mainly on the collection times increasing efficiency of photomultiplier transit part and collecting part, determines
In the development of its industrial technology, can expand space very big；
4. the reading manner of pair signal, if single anode, it is possible to achieve large area is hankered subsignal whether there is it is fast
Speed is screened；If multianode is read, it is possible to achieve position resolution.
Brief description of the drawings
Consider following the following detailed description of the embodiment of the present invention in conjunction with the accompanying drawings, various targets of the invention,
Feature and advantage will become apparent.Accompanying drawing is only the exemplary diagram of the present invention, is not necessarily drawn to scale.
In the accompanying drawings, same reference represents same or similar part all the time.Wherein：
Fig. 1 is a kind of cross section structure schematic diagram of neutron detection negative electrode according to an illustrative embodiments.
Fig. 2 is the cross section structure schematic diagram of another neutron detection negative electrode according to an illustrative embodiments.
Fig. 3 is a kind of structural representation of neutron multiplication detection device according to an illustrative embodiments.
Fig. 4 is the structural representation of another neutron multiplication detection device according to an illustrative embodiments.
Wherein, description of reference numerals is as follows：
1st, vacuum tank；2nd, cathode layer；3rd, neutron absorption layer；4th, dynode；5th, anode；6th, microchannel plate；7th, multianode
Array.
Embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that the present invention will
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Identical accompanying drawing in figure
Mark represents same or similar structure, thus will omit their detailed description.
Fig. 1 is a kind of cross section structure schematic diagram of neutron detection negative electrode according to an illustrative embodiments.
Example as shown in Figure 1, one embodiment of the invention provide a kind of neutron detection negative electrode, and it is that transmission-type neutron detection is cloudy
Pole, electronics is discharged corresponding to the incidence of neutron, this neutron detection negative electrode includes supporting substrate 1, electrode layer 2 and neutron prisoner
Obtain layer 3.
As shown in figure 1, transmission-type neutron detection negative electrode possesses through the incident neutron n for being applicable energy range0Branch support group
Plate 1, the electrode layer 2 being arranged on the supporting substrate 1, the neutron absorption layer 3 being arranged on the electrode layer 2.
Supporting substrate 1 has the plane of incidence 11 and incidence of the neutron plane of incidence as the transmission-type neutron detection negative electrode
The relative supporting surface 12 in face 11.Neutron absorption layer 3 has the basal plane 31 relative with the supporting surface 12 of supporting substrate 1 and the basal plane
The 31 relative and emission surfaces 32 that are worked as the photoelectron exit facet of the transmission-type neutron detection negative electrode.The of electrode layer 2
Simultaneously 21 supporting surface 12 for being directly contacted with supporting substrate 1, the second face 22 of electrode layer 2 is directly contacted with neutron absorption layer 3
Basal plane 31, electrode layer 2 is between supporting substrate 1 and neutron absorption layer 3.
In the transmission-type neutron detection negative electrode, incident neutron n0It is incident from the side of the plane of incidence 11 of supporting substrate 1, it is corresponding
In incident neutron n0, from the ejected electron e of emission surface 32 of neutron absorption layer 3-.In a word, neutron absorption layer 3 makes neutron n0From with
The relative side of basal plane 312 of supporting substrate 1 is incident, and to the opposite emission surface 32 with supporting substrate 1 by electronics e-Release.Electrode
Layer 2 is used to provide field effect, in order to by electronics e-Conveyed to anode.
It should be understood that above-mentioned transmission-type neutron detection negative electrode can be used for transmission detector, i.e. radioactive source and anode
It is located relatively at the relative both sides of detection negative electrode.
On the other hand, Fig. 2 is the reflection-type neutron of another embodiment of neutron detection negative electrode involved in the present invention
Detect the sectional view of negative electrode.As shown in Fig. 2 reflection-type neutron detection negative electrode possesses the incident neutron for passing through or blocking applicable wavelengths
n0Supporting substrate 1, the electrode layer 2, the neutron absorption layer 3 that is arranged on the electrode layer 2 that are arranged on the supporting substrate 1.
Supporting substrate 1 has supporting surface 12.Neutron absorption layer 3 has the basal plane relative with the supporting surface 12 of supporting substrate 1
31st, and the neutron plane of incidence as the reflection-type neutron detection negative electrode 1 and electron exit face double acting relative with the basal plane 31
Emission surface 32.First face 21 of electrode layer 2 is directly contacted with the supporting surface 12 of supporting substrate 1, and the second face 22 of electrode layer 2 is straight
The basal plane 31 of neutron absorption layer 3 is contacted with, electrode layer 2 is between supporting substrate 1 and neutron absorption layer 3.
In the reflection-type neutron detection negative electrode, in incident neutron n0Advanced from neutron absorption layer 3 towards supporting substrate 1 and
After arrival, corresponding to incident neutron n0, from supporting substrate 1 towards ejected electron e on the direction of neutron absorption layer 3-.Always
It, neutron absorption layer 3 makes neutron n0It is incident from the opposite side of supporting substrate 1 and to the opposite side ejected electron e of supporting substrate 1-。
It is preferred that supporting substrate 1 is formed by the material of blocking neutron.Due to supporting the reinforcement part material of neutron absorption layer 3 as supporting substrate 1
And work, therefore supporting substrate material as conduct, it is suitable to select the metal material such as lead.
Among any one of transmission-type neutron detection negative electrode as described above and reflection-type neutron detection negative electrode, electricity
Pole layer 2 and neutron absorption layer 3 can be provided with constructing with identical as described below.
In the embodiment of the present invention, on the material of neutron absorption layer, it may be selected to carry out neutron absorption based on nuclear reaction method.Core
Reaction method is that give off energy higher charged particle and/or gamma-rays, passes through after nuclear reaction occurs with atomic nucleus based on neutron
Record these secondarys, it is possible to achieve the detection to incident neutron.The material of neutron absorption layer may be selected to be conventional nucleic3He、6Li、10B etc..Above-mentioned several isotopes will be significantly larger than other with energy in the reaction cross-section for hankering the following neutron of subzone
Known light atom core, thus these three light isotopes are the effective conversion agents for detecting low energy neutron.It occurs after absorbing neutron
Nuclear reaction is as follows：
·n+3He→3H+1H+0.764MeV
·n+6Li→4He+3H+4.79MeV
·n+10B→7Li*+4He→7Li+4He+0.48MeV γ+2.3MeV (93%) →7Li+4He+2.8MeV
(7%)
With fissile material effect nuclear fission occurs for neutron, is split into two fission fragments, and discharge about 170MeV's
Energy.Nuclear fission is divided into two kinds：Non-threshold for thermal neutron detection is fissioned, and nucleic has233U、235U、239Pu；Visited for fast neutron
That surveys has threshold nuclear fission, and nucleic has232Th、238U、237Np.The material of the neutron absorption layer of the embodiment of the present invention can be233U、235U、239Pu or232Th、238U、237Np。
In the embodiment of the present invention, on the material of neutron absorption layer, such as some rare earth heavy metals (such as samarium, europium, gadolinium and
Dysprosium) there is king-sized neutron-capture cross section, especially natural same position of two kinds of gadolinium (Gadolinium) containing odd number neutron
Element155Gd and157Gd, there is thermal-neutron reaction section maximum in known nucleic,10B section is 3.8kbarn, and155Gd and157Gd thermal-neutron capture cross-section is respectively 6.1 × 104barn and 2.55 × 105barn, and its reaction is cut in fast-neutron range
Face drastically declines, afterwards into resonance interference method area, it can be seen that Gd above two isotope is nearly transparent to fast neutron, is day
Right thermal capture agent.And both Gd natural abundance of isotopes are very considerable, refer to following table：
In one embodiment of the present invention, the neutron absorption layer is the coating for the compound for including gadolinium, or to mix
Gadolinium resistive coating.By following reactional equation nuclear reaction occurs for above-mentioned Gd two kinds of isotopes：
n+155Gd→156Gd*→156Gd+γ(8.5MeV)+e- IC(0.039~0.19MeV)+X
n+157Gd→158Gd*→158Gd+γ(7.9MeV)+e- IC(0.029~0.20MeV)+X
155Gd and157Gd generation lifetimes after neutron is absorbed very short unstable excitation state156Gd* and158Gd*, total excitation energy
Respectively 8.53MeV and 7.94MeV.Both launch a series of gammas (γ) ray during de excitation step by step to ground state；
There is very big chance during afterbody de excitation by inner-shell electron of the unnecessary energy transmission to atom, disengage it from track and go out
Penetrate, form electronics (internal conversion electron).Because two kinds of Gd natural abundance of isotopes are very considerable, tool
Body example be using the oxide containing gadolinium coating can low cost reach neutron absorption, finally to realize the extremely low of neutron
The multiplication detection of noise.
It will be understood by those skilled in the art that the compound of gadolinium described in the embodiment of the present invention, can select be：Oxygen
Change gadolinium Gadolinium oxide, nano oxidized gadolinium Gadolinium oxide, hydronium(ion) gadolinium oxide (REO) Gadolinium
(Iii) Hydroxide Hydrate, oxalic acid hydrate gadolinium (REO) Gadolinium (Iii) Oxalate Hydrate, super dry chlorination
Gadolinium (REO) Gadolinium (Iii) Chloride, Ultra Dry, trifluoromethanesulfonic acid gadolinium Gadolinium (III)
Trifluoromethanesulfonate, gadolinium nitrate, six water Gadolinium (III) nitrate hexahydrate, chlorination
Gadolinium (III) hexahydrate Gadolinium chloride hexahydrate, gadolinium fluoride Gadolinium (III) fluoride,
Gadolinium bromide (III) Gadolinium bromide, iodate gadolinium Gadolinium (III) iodide, the hydrate of Digadolinium trisulfate eight
Gadolinium (III) sulfate octahydrate, Digadolinium trisulfate (III) Gadolinium sulfate, gadolinium chloride (III)
Gadolinium chloride, gadolinium nitrate, six water Gadolinium (III) more than nitrate hexahydrate wherein it
One or at least two combination.
Because the penetration capacity of neutron is very strong, thickness is related to detection efficient, so, the thickness of neutron absorption layer can be with
It is nanometer, micron dimension.According to common sense in the field, nanometer scale refers to physical dimension in 1 to 100 nanometer range；It is described micro-
Rice magnitude refers generally within 100 microns.
The embodiment of the present invention provides a kind of neutron detection device, it is believed that is mainly by neutron absorption layer and electrode layer
Combine to form the negative electrode of detector, wherein electrode layer is located at neutron light incident side, and neutron absorption layer is located at close to electron multiplication
Structure is detected, facilitates the use and examines caused electronics directive electron multiplication after neutron absorption layer and neutron reaction under electric field action
Geodesic structure.
Neutron detection device construction provided in an embodiment of the present invention is referred to various photomultipliers (PMT), Ke Yishi
The photomultiplier of end window type (Head-on) or side window type (Side-on) structure.The photomultiplier of side window type, from glass shell
Side receive incident light, and end window type photomultiplier is to receive incident light from the top of glass shell.Under normal circumstances, side window
Type photomultiplier price is relatively inexpensive, and has extensive use in terms of spectrophotometer and common photometering.It is most of
Side window type photomultiplier used opaque negative electrode (reflective negative electrode) and ring focusing type dynode structure, this makes
It has higher sensitivity under relatively low operating voltage.End window type (also referred to as roof window type) photomultiplier is in its entrance window
Inner surface on deposited semitransparent cathode (through mode negative electrode), make it have the uniformity better than side window type.End window type photoelectricity
The characteristics of multiplier tube, also possesses the negative electrode from tens square millimeters to hundreds of square centimeters including it.In end window type photomultiplier
, can be with the photomultiplier of the large scale hemispherical optical window of extensive angle trapping incident light also for high-energy physics experiment.
The embodiment of the present invention can select to be transformed with the above-mentioned basis that is configured as, with this corresponding various demand or environment come in detecting
Son.
And in the embodiment of the present invention, electron multiplication detects the form of structure, with reference to the structure of existing photomultiplier, citing
For can be：Ring focusing type, box grid-type, line(ar) focus type, flap type, fine-structure mesh type microchannel plate (MCP) type, metal lead to
The electron multiplications such as channel type detect structure, in addition, it is also possible that two kinds of structures, which mix, in said structure.The dynode of mixing can
To play respective advantage.
A specific embodiment of the invention is described as follows below in conjunction with accompanying drawing：Fig. 3 is shown according to an illustrative embodiments
A kind of structural representation of the neutron multiplication detection device gone out.
As illustrated, a kind of neutron multiplication detection device of the specific embodiment of the invention can mainly include vacuum tank 1, electricity
Pole layer 2, neutron absorption layer 3, dynode 4 and anode 5.Vacuum tank 1 has entrance window position, and entrance window can be with reference to photoelectricity
The end-window or side window type of multiplier tube (PMT).The optional inner surface that entrance window position is covered in an electrode layer 2, electrode layer 2
Can be that the other conductor materials of metal are formed by film technique.Neutron absorption layer 3 therein is covered in the inner surface of electrode layer,
The material for the generation electric signal that can be reacted after being injected by neutron can be utilized to be formed by film technique.Here neutron absorption layer
3 can select to be formed by film technique with the material containing gadolinium oxide.
On film technique, in the embodiment of the present invention, can select to use vacuum evaporation, sputter evaporation, ion plating etc. for
The physical vapour deposition (PVD) (PVD) or chemical vapor deposition (CVD) of representative；Or be also an option that for metal electrode be plating,
The mode such as chemical plating or anodic oxidation.
As illustrated, in the specific embodiment of the invention, anode 5 is located in vacuum tank 1, and anode 5 can counter electrode layer 2
In the opposite side of vacuum tank 1.And dynode 4 can be multiple, interval is distributed between electrode layer 2 and anode 5.Such as Fig. 3
Shown, from entrance window to anode 5, electrode layer 2, multiple dynodes 4 and anode 5 are arranged in sequence, wherein the electricity of each electrode
Position raises step by step according to said sequence, in order to form effect electric field, neutron absorption layer 3 react caused by electronics guide step by step and again
Increase amplification.
So, neutron is incident to neutron absorption layer 3 from incidence end, and neutron absorption layer 3 produces electronics, electronics after capturing neutron
Acted on by each electrode in vacuum state, collected after each dynode 4 doubles amplification step by step by anode 5, can be according to the change of anode 5
Change signal to detect neutron signal.These impact dynodes 4 electronic energies dynode 4 is discharged more electronics, they again by
Focus on next dynode 4.So, typically double through more than ten times, multiplication factor can reach 108~1010.Finally, in height
The anode of current potential is collected into the current signal being exaggerated.
It is good for slow neutron Effect on Detecting to form neutron absorption layer 3 containing gadolinium oxide in the embodiment.It should be appreciated that
, moderation of neutrons mechanism can be set up outside entrance window, for example moderation of neutrons mechanism is made using light-water, heavy water or graphite,
So that Moderation of the fast neutrons to be detected again as slow neutron.
In one embodiment, the selection of vacuum tank 1 is glass material；The incidence end or entirety of vacuum tank 1 also can be by conductions
Material is made, and electrode layer 2 can be with the incidence end of vacuum tank 1 or being integrated into one whole, certainly, the vacuum of conductive material here
Container will completely cut off with each electrode of inside, in this way, neutron absorption layer 3 is directly molded on the incidence end inner surface of vacuum tank 1.
In one embodiment, between 2 to the first dynodes of electrode layer 4, Electron Beam Focusing electric field arrangement may also set up.
In one embodiment, electron multiplication detects the form of structure, can also be：Ring focusing type, box grid-type, line(ar) focus
The electron multiplications such as type, flap type, fine-structure mesh type microchannel plate (MCP) type, metal passage type detect structure, in addition, said structure
In two kinds of structures mix and possible.The dynode of mixing can play respective advantage.
Another specific embodiment of the present invention is described as follows below in conjunction with accompanying drawing：Fig. 4 is according to an illustrative embodiments
The structural representation of another neutron multiplication detection device shown.
As illustrated, a kind of neutron multiplication detection device of the specific embodiment of the invention can mainly include vacuum tank 1, electricity
Pole layer 2, neutron absorption layer 3, microchannel plate 6 and multianode array 7.Vacuum tank 1 has entrance window position, and entrance window can be
With reference to micro-channel plate detector (MCP).It may be selected to be covered in the inner surface at entrance window position with an electrode layer 2, electrode layer 2 can be with
It is that the other conductor materials of metal are formed by film technique.Neutron absorption layer 3 therein is covered in the inner surface of electrode layer, can be with
The material for producing electric signal using that can be reacted after being injected by neutron is formed by film technique.Here neutron absorption layer 3 can
To select to be formed by film technique with the compound-material containing gadolinium.
Microchannel plate 6 and multianode array 7 are located in vacuum tank 1, multianode array 7 can opposing cathode be located at vacuum appearance
The opposite side of device 1.As shown in figure 4, from entrance window at most anode array 7, electrode layer 2, microchannel plate 6 and multianode array 7 are pressed
Order is arranged, in order to form effect electric field, neutron absorption layer 3 react caused by electronics guide step by step in multianode array 7 and
Multiplication amplification.
So, neutron is incident to neutron absorption layer 3 from incidence end, and neutron absorption layer 3 produces electronics, electronics after capturing neutron
Acted on by each electrode in vacuum state, collected after microchannel plate 6 and multianode array 7 double amplification step by step by outgoing anode.
It is also understood that being, one embodiment of the invention provides a kind of neutron multiplication detection method, mainly including step：
Prepare a cathode layer, a neutron absorption layer and the electron multiplication structure positioned at vacuum state；The cathode layer, one
Neutron absorption layer and electron multiplication structural order arrangement；
Neutron is captured through the cathode layer by the neutron absorption layer, produces electronics；
The electronics is under the cathode layer and the electron multiplication structure collective effect, into electron multiplication structure, electricity
Son multiplication detection structure detects detection of electrons neutron by doubling.
1. the area of the neutron absorption layer of the neutron detection negative electrode of the embodiment of the present invention can be and specifically used with unrestricted
Detector geometry depend on vacuum technique development；
Carried 2. should be understood that can directly replace with the embodiment of the present invention the photocathode in various photomultipliers
The neutron absorption layer of confession, other techniques are constant, and photomultiplier can be directly converted to neutron-electron multiplier tube；
The performance of 3 this detector depends mainly on the collection times increasing efficiency of photomultiplier transit part and collecting part, determines
In the development of its industrial technology, can expand space very big；
4. the reading manner of pair signal, if single anode, it is possible to achieve large area is hankered subsignal whether there is it is fast
Speed is screened；If multianode is read, it is possible to achieve position resolution.
Certainly, once thinking over the above description of representative embodiment, those skilled in the art just will readily appreciate that, can
These specific embodiments are made with a variety of remodeling, addition, replacement, deletion and other changes, and these changes are in this hair
In the range of bright principle.Therefore, detailed description above should be clearly understood that it is only to come by way of illustration and example
Provide, the spirit and scope of the present invention are only limited by appended claims and its equivalent.
Claims (10)
1. a kind of neutron detection negative electrode, it is characterised in that can be changed including thermal capture material, after incident thermal neutron and produce energy
The electronics of direct detection, the neutron detection negative electrode include：
Supporting substrate；
Electrode layer, it is arranged on the supporting substrate；And
Neutron absorption layer, it is arranged on the electrode layer opposite side relative with institute supporting substrate, the neutron absorption layer includes
Neutron absorption material, and discharge electronics after the neutron absorption material trap neutron.
2. neutron detection negative electrode as claimed in claim 1, it is characterised in that the neutron absorption layer is the chemical combination for including gadolinium
The coating of thing, or to mix gadolinium resistive coating.
3. neutron detection negative electrode as claimed in claim 1, it is characterised in that the supporting substrate material is neutron transmission material
Material；Neutron is incident to the neutron absorption layer from the supporting substrate side, and electronics caused by the neutron absorption layer is to the branch
The opposite side of support group plate discharges.
4. neutron detection negative electrode as claimed in claim 1, it is characterised in that
The supporting substrate material is neutron transmission material,
Neutron is incident to the neutron absorption layer from the opposite side of the supporting substrate, and electronics caused by the neutron absorption layer is to institute
The opposite side for stating supporting substrate discharges.
5. neutron detection negative electrode as claimed in claim 1, it is characterised in that the neutron absorption layer has semiconductive thin film
Surface resistance, the electrode layer provides voltage for the neutron absorption layer, and then forms electric field, and the electronics of outgoing is passed through to the work of electric field
With being collected.
A kind of 6. neutron detector, it is characterised in that including：
Neutron detection negative electrode as described in any one of claim 1 to 5；
Collect the anode or anode array from the neutron detection negative electrode ejected electron；And
Accommodate the container of the neutron detection negative electrode and the anode.
7. neutron detector as claimed in claim 1, it is characterised in that the supporting substrate of the neutron detection negative electrode is described
A part for the shell of container.
A kind of 8. neutron detector, it is characterised in that including：
Neutron detection negative electrode described in any one of claim 1 to 5；
For the electron multiplication portion for the cascade multiplication that will be released from the neutron detection negative electrode；
Collect the anode or anode array for the secondary electron released from the electron multiplication portion；And
Accommodate the container of the neutron detection negative electrode, the electron multiplication portion and the anode.
9. neutron detector as claimed in claim 8, it is characterised in that the supporting substrate of the neutron detection negative electrode is described
A part for the shell of container.
10. a kind of neutron detection method, including step：
Prepare a cathode layer, a neutron absorption layer and the anode positioned at vacuum state；The cathode layer, a neutron absorption layer and
One anode order is arranged, and the cathode layer is bonded with the neutron absorption layer；
Thermal neutron is captured through the cathode layer by the neutron absorption layer, produces electronics；
The electronics is collected by anode and detected under the cathode layer and the anode collective effect.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110567814A (en) * | 2019-08-26 | 2019-12-13 | 中国科学院地质与地球物理研究所 | Neutron imaging method for natural gas hydrate sediment triaxial mechanical test |
| CN110988971A (en) * | 2019-12-30 | 2020-04-10 | 中国科学院高能物理研究所 | Wide-energy-spectrum white-light neutron resonance photography detector and detection method |
| WO2020133865A1 (en) * | 2018-12-24 | 2020-07-02 | 上海集成电路研发中心有限公司 | Device and method for detecting neutron content in ion implantation cavity |
| CN112068187A (en) * | 2020-09-03 | 2020-12-11 | 中国科学院高能物理研究所 | High-sensitivity thermal neutron detector |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924007A (en) * | 2009-06-10 | 2010-12-22 | 中国科学院高能物理研究所 | Photomultiplier |
| CN101995581A (en) * | 2009-08-28 | 2011-03-30 | 中国科学院高能物理研究所 | Gadolinium-doped resistive plate and detector formed thereby |
| CN102313898A (en) * | 2010-06-30 | 2012-01-11 | 清华大学 | Thermal neutron detector and manufacturing method thereof |
| CN102565846A (en) * | 2011-12-30 | 2012-07-11 | 清华大学 | Honeycomb-type thermal neutron detector |
| US20120286166A1 (en) * | 2011-04-07 | 2012-11-15 | Stc. Unm | Thermal neutron detectors based on gadolinium-containing nanoscintillators |
| US20130256520A1 (en) * | 2012-03-28 | 2013-10-03 | Roman Korkin | Photomultipler-based neutron detector |
| US20140077088A1 (en) * | 2010-03-23 | 2014-03-20 | Nova Scientific, Inc. | Neutron Detection |
| CN205941926U (en) * | 2016-08-24 | 2017-02-08 | 中国工程物理研究院核物理与化学研究所 | Neutron detector based on fission collecting of electro principle |
-
2017
- 2017-11-10 CN CN201711106734.8A patent/CN107884809B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924007A (en) * | 2009-06-10 | 2010-12-22 | 中国科学院高能物理研究所 | Photomultiplier |
| CN101995581A (en) * | 2009-08-28 | 2011-03-30 | 中国科学院高能物理研究所 | Gadolinium-doped resistive plate and detector formed thereby |
| US20140077088A1 (en) * | 2010-03-23 | 2014-03-20 | Nova Scientific, Inc. | Neutron Detection |
| CN102313898A (en) * | 2010-06-30 | 2012-01-11 | 清华大学 | Thermal neutron detector and manufacturing method thereof |
| US20120286166A1 (en) * | 2011-04-07 | 2012-11-15 | Stc. Unm | Thermal neutron detectors based on gadolinium-containing nanoscintillators |
| CN102565846A (en) * | 2011-12-30 | 2012-07-11 | 清华大学 | Honeycomb-type thermal neutron detector |
| US20130256520A1 (en) * | 2012-03-28 | 2013-10-03 | Roman Korkin | Photomultipler-based neutron detector |
| CN205941926U (en) * | 2016-08-24 | 2017-02-08 | 中国工程物理研究院核物理与化学研究所 | Neutron detector based on fission collecting of electro principle |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020133865A1 (en) * | 2018-12-24 | 2020-07-02 | 上海集成电路研发中心有限公司 | Device and method for detecting neutron content in ion implantation cavity |
| CN110567814A (en) * | 2019-08-26 | 2019-12-13 | 中国科学院地质与地球物理研究所 | Neutron imaging method for natural gas hydrate sediment triaxial mechanical test |
| CN110567814B (en) * | 2019-08-26 | 2024-02-20 | 中国科学院地质与地球物理研究所 | Neutron imaging method for triaxial mechanical test of natural gas hydrate sediment |
| CN110988971A (en) * | 2019-12-30 | 2020-04-10 | 中国科学院高能物理研究所 | Wide-energy-spectrum white-light neutron resonance photography detector and detection method |
| CN112068187A (en) * | 2020-09-03 | 2020-12-11 | 中国科学院高能物理研究所 | High-sensitivity thermal neutron detector |
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