CN107871755A - Imaging sensor and its manufacture method - Google Patents
Imaging sensor and its manufacture method Download PDFInfo
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- CN107871755A CN107871755A CN201711088018.1A CN201711088018A CN107871755A CN 107871755 A CN107871755 A CN 107871755A CN 201711088018 A CN201711088018 A CN 201711088018A CN 107871755 A CN107871755 A CN 107871755A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title abstract description 67
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 230000006872 improvement Effects 0.000 claims abstract description 26
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 31
- 238000005229 chemical vapour deposition Methods 0.000 claims description 30
- 239000010937 tungsten Substances 0.000 claims description 30
- 229910052721 tungsten Inorganic materials 0.000 claims description 30
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 7
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- -1 Tungsten nitride Chemical class 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 150000003658 tungsten compounds Chemical group 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 description 31
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 31
- 230000008569 process Effects 0.000 description 25
- 238000005240 physical vapour deposition Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 206010010144 Completed suicide Diseases 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910008814 WSi2 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Abstract
This disclosure relates to imaging sensor and its manufacture method.One of embodiment provides a kind of imaging sensor, and it includes：Substrate with pixel region, in the pixel region the substrate and/or among the component formed with semiconductor devices；And the contact contacted with the component, on the pixel region of the substrate, wherein described contact includes metal, laying and the improvement resistive layer directly contacted with the component of filling contact hole, wherein the component and the contact resistance improved between resistive layer are less than the contact resistance between the component and the laying.
Description
Technical field
This disclosure relates to semiconductor applications, it particularly relates to imaging sensor and its manufacture method.
Background technology
In current imaging sensor, especially in cmos image sensor, in order to reduce the dark current of pixel region, lead to
Often pixel region is blocked during metal silicide is formed, so as to not form metal silicide in pixel region.
But thus the contact of pixel region is usually silicon and Ti/TiN/W Metals-semiconductor contacts, causes the contact resistance ratio of pixel region
It is larger, so as to have impact on performance.
Therefore the demand for new technology be present.
The content of the invention
One purpose of the disclosure is to provide a kind of structure of novel imaging sensor and its corresponding manufacture method.
According to the first aspect of the disclosure, there is provided a kind of imaging sensor, it includes：Substrate with pixel region,
In the pixel region the substrate and/or among the component formed with semiconductor devices；And contacted with the component
Contact, on the pixel region of the substrate, wherein the metal of the contact including filling contact hole, pad
Layer and the improvement resistive layer directly contacted with the component, wherein the contact between the component and the improvement resistive layer
Resistance is less than the contact resistance between the component and the laying.
According to the second aspect of the disclosure, there is provided a kind of method for manufacturing imaging sensor, it includes：Offer has picture
The substrate in plain area, in the pixel region the substrate and/or among the component formed with semiconductor devices；Described
Dielectric layer is formed on the pixel region of substrate, and is contacted in the dielectric layer corresponding to formation and the component
Hole, at least a portion of the component is exposed from the contact hole；The contact contacted with the component is formed, wherein described
Contact includes metal, laying and the improvement resistive layer directly contacted with the component of filling contact hole, wherein described
Component and the contact resistance improved between resistive layer are less than the contact resistance between the component and the laying.
According to the third aspect of the disclosure, there is provided a kind of imaging sensor, it includes：Substrate with pixel region,
In the pixel region the substrate and/or among the component formed with semiconductor devices；And contacted with the component
Contact, on the pixel region of the substrate, wherein the metal of the contact including filling contact hole and
The metal silicide layer directly contacted with the component and the metal.
According to the fourth aspect of the disclosure, there is provided a kind of method for manufacturing imaging sensor, it includes：Offer has picture
The substrate in plain area, in the pixel region the substrate and/or among the component formed with semiconductor devices；Described
Dielectric layer is formed on the pixel region of substrate, and is contacted in the dielectric layer corresponding to formation and the component
Hole, at least a portion of the component is exposed from the contact hole；And the contact contacted with the component is formed, wherein
The metal silicide that the contact includes the metal of filling contact hole and directly contacted with the component and the metal
Layer.
By referring to the drawings to the present invention exemplary embodiment detailed description, further feature of the invention and its
Advantage will become more apparent from.
Brief description of the drawings
The accompanying drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
Referring to the drawings, according to following detailed description, the disclosure can be more clearly understood, wherein：
Fig. 1 shows the sectional view of the imaging sensor according to disclosure exemplary embodiment.
Fig. 2 shows the sectional view of an alternate embodiments of the imaging sensor according to the disclosure.
Fig. 3 shows the flow chart of the method for making image sensor according to disclosure exemplary embodiment.
Fig. 4 A-4E respectively illustrate is manufacturing imaging sensor side according to one exemplary embodiment of the disclosure
Device schematic cross-section at each step of method example.
Pay attention to, in embodiments described below, be used in conjunction with same reference between different accompanying drawings sometimes
Come the part for representing same section or there is identical function, and omit its repeat specification.In this manual, using similar mark
Number and letter represent similar terms, therefore, once be defined in a certain Xiang Yi accompanying drawing, then in subsequent accompanying drawing do not need pair
It is further discussed.
In order to make it easy to understand, position, size and scope of each structure shown in accompanying drawing etc. etc. does not indicate that reality sometimes
Position, size and scope etc..Therefore, disclosed invention is not limited to position, size and scope disclosed in accompanying drawing etc. etc..
Embodiment
In current cmos image sensor, generally with self-aligned silicide (salicide) technique come in MOS crystal
The grid of pipe, source electrode, drain surface form silicide (such as nickle silicide, cobalt silicide etc.), so as to reduce the contact of contact electricity
Resistance.And in order to reduce the dark current of pixel region, prior art only forms silicide in the contact of the transistor of external zones, and
Avoid forming silicide in pixel region.
When forming self-aligned silicide, layer of metal, then high temperature are generally first deposited on a silicon substrate by metal and silicon
Reaction generation silicide, then removes unnecessary metal.Inventors herein have recognized that such suicide formation processes can be made
It is diffused into many metals among substrate, so as to which serious metallic pollution can be caused to pixel region, causes white pixel problems, so will
Stop pixel region during self-aligned silicide is formed.But present inventor also found, do not have at present in pixel region
Silicide can cause contact resistance high again, hinder the development of device performance.Therefore, present inventor is by researching and proposing
A kind of improvement project, contact resistance in pixel region can be improved, improve the performance of semiconductor devices in pixel region.
It is described in detail the various exemplary embodiments of the disclosure below with reference to accompanying drawings.It should be noted that：Unless have in addition
Body illustrates that the unlimited system of part and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
The description only actually at least one exemplary embodiment is illustrative to be never used as to the disclosure below
And its application or any restrictions that use.That is, imaging sensor and its manufacture method herein is with exemplary
Mode is shown, to illustrate the different embodiments of the structures and methods in the disclosure.It will be understood by those skilled in the art, however, that
They are merely illustrative the exemplary approach of the invention that can be used for implementing, rather than the mode of limit.In addition, accompanying drawing need not be by
Ratio is drawn, and some features may be exaggerated to show the details of specific component.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Herein, term " contact (contact) " is common implication in this area, and it is used for semiconductor devices
Each component draw go, be connected with the metal connecting line of top, so as to realize that the interconnection of each semiconductor devices and voltage are applied
Add.
In order to more comprehensively, the present invention is expressly understood, illustrate the novel skill according to the disclosure below in conjunction with accompanying drawing
Art.
Fig. 1 shows the sectional view of the imaging sensor according to one exemplary embodiment of the disclosure.It note that except figure
Outside the part of imaging sensor shown in 1, what actual imaging sensor was manufactured and/or subsequently manufactured before being likely present
Other parts, and in order to avoid obscuring the main points of the disclosure, accompanying drawing is not shown and does not also go that other parts are discussed herein.
Because the disclosure is only concerned about the device architecture of the pixel region of imaging sensor, the image is merely illustrated in Fig. 1
The pixel region of sensor.In the pixel region, the imaging sensor includes substrate 101, and on substrate 101 and substrate
The component 103 of semiconductor devices is respectively formed among 101.
Substrate 101 can be Semiconductor substrate, by be suitable for imaging sensor any semi-conducting material (such as Si,
SiC, SiGe etc.) it is made, such as can be monocrystalline substrate.In some embodiments, substrate can also be silicon-on-insulator
(SOI), the various compound substrates such as silicon germanium on insulator.Those skilled in the art understand that substrate is not any way limited, but
It can be selected according to practical application.Can also be formed with other semiconductor devices components, example on the neutralization of substrate 101
Such as, trap and/or other components for being formed in earlier processing step etc..Note that the component 103 in Fig. 1 is an example,
It is not construed as limiting.
Semiconductor devices can be photodiode, MOS transistor etc., and component 103 can be included on substrate 101
The grid of formation, the active area formed among substrate 101 etc., such as source region and drain region.In some embodiments, grid can
With including polysilicon.
In addition, the imaging sensor also includes the contact 108 on component 103 and being in contact with it.The quilt of contact 108
Formed in dielectric layer 102, be specifically formed in the contact hole in dielectric layer 102.Contact 108 includes pad
Layer 105, improve resistive layer 106 and metal 107.Improve resistive layer 106 respectively with the component 103 of lower section and the metal of top
107 directly contact, and improve the contact structures of the component 103 of resistive layer 106/ so as to form metal 107/.Improve the implication of resistive layer
For the layer for improving contact resistance, i.e., compared with without the structure of the improvement resistive layer, there is the contact of the improvement resistive layer
Contact resistance between part and component reduces.That is, component and improve resistive layer between contact resistance be less than component with
Contact resistance between laying.In other words, with the contact structures of the component 103 of 107/ laying of metal 105/ (laying with
Component is directly contacted to form contact resistance) to compare, Fig. 1 metal 107/ improves the contact structures of the component 103 of resistive layer 106/
Contact resistance reduce.
By Fig. 1 image sensor architecture, an improvement resistive layer is introduced in the contact in pixel region, so as to
The contact resistance in pixel region can be improved, improve the performance of semiconductor devices in pixel region.
Those skilled in the art are understood that the structure of the contact of the disclosure is not limited to as shown in Fig. 1, but can
To carry out various modifications as needed.
Preferably, the material of the improvement resistive layer can be directly generated by chemical vapor deposition process, such as
The conductive compound of tungsten, including tungsten silicide or tungsten nitride etc..So as to which the improvement resistive layer is to pass through chemical vapor deposition process
Come the layer for depositing its material and being formed.Because directly forming improvement resistive layer using chemical vapor deposition process, changing
While the contact resistance of the semiconductor devices of kind pixel region, without worrying that pixel region can be caused the unfavorable shadow such as metallic pollution
Ring.
In some embodiments, the thickness of resistive layer 106 is improved in the range of 5nm to 20nm.Preferably, electricity is improved
The thickness of resistance layer 106 can be 10nm or so.In some embodiments, the metal 107 of filling contact hole can be tungsten.Although
Two side walls of the covering contact hole of laying 105 shown in Fig. 1, but disclosure not limited to this.In addition, in some embodiment party
In formula, laying 105 can also play a part of diffusion impervious layer.For example, laying 105 can include titanium nitride layer, it can hinder
Keep off the diffusion of tungsten.In some embodiments, laying 105 can include two layers of titanium nitride layer and titanium layer, wherein nitrogen
Change titanium layer to contact with the metal 107 in hole, titanium layer contacts with dielectric layer 102, so as to preferably realize diffusion barrier and increasing
The two effects of strongly adherent.In some embodiments, the thickness of laying 105 is in the range of 10nm to 20nm.For example,
Titanium nitride layer can be 10nm to 20nm thickness.
Fig. 2 shows the sectional view of an alternate embodiments as the imaging sensor shown in Fig. 1.It note that and remove
Outside the part of imaging sensor shown in Fig. 2, manufacture and/or follow-up system before actual imaging sensor is likely present
The other parts made, and in order to avoid obscuring the main points of the disclosure, accompanying drawing is not shown and does not also go that other parts are discussed herein.
It is same as in figure 1, the pixel region of the imaging sensor is also only show in Fig. 2.In the pixel region, the image sensing
Device includes substrate 101, and the component 103 of semiconductor devices is respectively formed with substrate 101 and among substrate 101.With
Identical content just repeats no more herein in Fig. 1.
In addition, the imaging sensor also includes the contact 208 on component 103 and being in contact with it.The quilt of contact 208
Formed in dielectric layer 102, be specifically formed in the contact hole in dielectric layer 102.Contact 208 includes filling
The metal 107 and metal silicide layer 106 of contact hole, the metal silicide layer 106 directly connect with component 103 and metal 107
Touch.The metal silicide layer 106 improves the contact resistance between component 103 and metal 107, so as to improve in pixel region
Contact resistance, improve the performance of semiconductor devices in pixel region.
Compared with Fig. 1 structure, the contact shown in Fig. 2 can not include laying, and only include filling contact hole
Metal and the metal silicide layer directly contacted with component and metal.In this case, the metal silicide layer can fill
When the pad/barrier layer of contact metal (such as tungsten), so there is no need to be additionally formed laying again.Or filling contact
The metal in hole and the adhesion property of surrounding dielectric layers are enough, therefore also without being additionally formed laying again.
Those skilled in the art are understood that the structure of the contact of the disclosure is not limited to as shown in Fig. 2, but can
To carry out various modifications as needed.
Preferably, the metal silicide layer 106 can be directly generated by chemical vapor deposition process, such as including silicon
Change the materials such as tungsten.Because directly forming metal silicide layer 106 using chemical vapor deposition process, improving pixel region
Semiconductor devices contact resistance while, without worry pixel region can be caused metallic pollution etc. adversely affect.
In some embodiments, the thickness of metal silicide layer 106 is in the range of 5nm to 20nm.Preferably, metal
The thickness of silicide layer 106 can be 10nm or so.In some embodiments, the metal 107 of filling contact hole can be tungsten.
Fig. 3 shows the flow chart of the method for making image sensor 300 according to disclosure exemplary embodiment.Tie above
Close the content described by Fig. 1 and Fig. 2 and be readily applicable to corresponding feature, may repeat no more below.
Specifically, as shown in figure 3, at step 310, there is provided have pixel region substrate, in the pixel region
The substrate and/or among the component formed with semiconductor devices.On substrate, semiconductor devices and component, Ke Yican
Fig. 1 related record is examined, will not be repeated here.
At step 320, dielectric layer is formed on the pixel region of the substrate, and in the dielectric layer
Contact hole corresponding with the component is formed, at least a portion of the component is exposed from the contact hole.
At step 330, the contact contacted with the component is formed.
In some embodiments, it is such as illustrated in fig. 1, above-mentioned contact can include filling contact hole metal,
Laying and the improvement resistive layer directly contacted with the component, wherein between the component and the improvement resistive layer
Contact resistance is less than the contact resistance between the component and the laying.
Preferably, one layer of improvement resistance material can be deposited by chemical vapor deposition process, using as in contact
Improvement resistive layer.Annealing can not had to afterwards by improving resistive layer described in chemical vapor deposition.
It is highly preferred that contact can be formed by following steps：
1st, with chemical vapor deposition process conformally (conformally) titanium nitride layer, and entering to titanium nitride layer
Go back and carve to remove the titanium nitride layer positioned at contact hole bottom, so as to the titanium nitride layer of the side wall of the remaining covering contact hole
As described laying.
2nd, another titanium nitride layer is deposited on the surface of the dielectric layer with physical vapour deposition (PVD) process.
Preferably, the thickness of another titanium nitride layer is in the range of 5nm to 8nm.
3rd, by the use of chemical vapor deposition process conformally deposit tungsten suicide layers to be used as the improvement resistive layer.
Preferably, the temperature in the chemical vapor deposition process is 300 to 400 degrees Celsius.In the chemical gaseous phase
The reacting gas used in deposition processes includes silicomethane (SiH4) and tungsten fluoride.
4th, chemical vapor deposition tungsten is to fill the contact hole, and carries out chemical mechanical polish process to tungsten.
On metal, laying and improve resistive layer, the associated description such as preference described in reference diagram 1 or embodiment
This is readily applicable to, will not be repeated here.
In other embodiments, for example, it is illustrated in fig. 2, and above-mentioned contact can not include laying, and only wrap
The metal silicide layer for including the metal of filling contact hole and directly being contacted with the component and the metal.In certain situation
Under, the metal silicide layer can serve as the pad/barrier layer of contact, and so there is no need to be additionally formed laying again.
Under certain situation, the metal of filling contact hole and the adhesion property of surrounding dielectric layers are enough, therefore also without extra shape again
Into laying.
Preferably, the contact can be formed as follows：
1st, with chemical vapor deposition process conformally deposited metal silicide layer.
Preferably, the metal silicide is tungsten silicide.
2nd, chemical vapor deposition tungsten is to fill the contact hole, and carries out chemical mechanical polish process to tungsten.
On metal and metal silicide layer, the associated description such as preference described in reference diagram 2 or embodiment also may be used
Suitable for this, will not be repeated here.
In order to more complete and comprehensive understand the present invention, will come below by taking structure shown in Fig. 1 specific example as an example detailed
A thin specific example for describing the method for making image sensor according to one exemplary embodiment of the disclosure.It note that this
Individual example is not intended to be construed as limiting the invention.For example, the present invention is not limited in concrete structure illustrated in fig. 1, and
It is to have the structure of same requirements or design consideration (including alternative shown in Fig. 2 etc.) to be all suitable for all.Above in conjunction with Fig. 1,
Content described by Fig. 2 and Fig. 3 is readily applicable to corresponding feature.
Fig. 4 A-4E respectively illustrate the device schematic cross-section at each step of this method example.This method example
It is primarily upon the contact piece structure how formed in Fig. 1.
At Fig. 4 A, there is provided there is the substrate 101 of pixel region, distinguish in the pixel region on substrate 101 among
Component 103 formed with semiconductor devices, these three components 103 can correspond respectively to the source electrode, grid and leakage of MOS transistor
Pole.
As it was previously stated, substrate 101 is not any way limited, but can be selected according to practical application.
In addition, on the substrate 101 formed with dielectric layer 102, and formation is right with each component 103 in dielectric layer 102
The contact hole 104 answered, at least a portion of component 103 is exposed from contact hole 104.
Dielectric layer 102 can be TEOS (tetraethyl orthosilicate, tetraethyl orthosilicate) dielectric material.Can
To form contact hole 104 by photoetching and etching processing.
At Fig. 4 B, conformally depositing titanium nitride (TiN) layer, and to titanium nitride is handled with chemical vapor deposition (CVD)
Layer carve to remove the titanium nitride layer positioned at contact hole bottom, so as to the nitridation of the side wall of remaining covering contact hole 104
Titanium layer is above-mentioned laying 105.The thickness of titanium nitride layer can be 10-20nm.Those skilled in the art are understood that, can be with
The titanium nitride layer is carved to deposit and return with all techniques known in the art, is not exposed to any restrictions.
At Fig. 4 C, handled with physical vapour deposition (PVD) (PVD) and deposit another titanium nitride layer on the surface of dielectric layer 102
109.Depositing TiN layer 109 is the good adhesion of the material in order to ensure the surface of dielectric layer 102 and be formed below.And by
It is bigger in the depth-to-width ratio of contact hole 104, TiN materials will not be filled out in PVD processing procedures in contact hole, therefore bottom hole portion is still
So there is no TiN, a part for component 103 is exposed from contact hole 104.
Preferably, PVD used can be sputtering process, and the thickness of the TiN layer 109 of deposition is about 5 to arrive 8nm.
At Fig. 4 D, by the use of chemical vapor deposition process conformally deposit tungsten suicide layers using be used as improve resistive layer 106.
Preferably, CVD techniques used can be hot CVD, and technological temperature can be at 300 to 400 degrees Celsius, the silicon of deposition
It is about 5 to arrive 20nm, more preferably about 10nm to change tungsten layer thickness.
Preferably, the reacting gas during CVD can be Mono-SiH4And WF6, deposit and obtain WSi2Afterwards need not
Made annealing treatment.
At Fig. 4 E, chemical vapor deposition tungsten is to fill up contact hole 104, and on tungsten and the surface of dielectric layer 102
Other layers (tungsten silicide layer 106 and TiN layer 109) carry out chemical mechanical polish process, so as to obtain contact as shown in Figure 1
108。
Tungsten silicide (WSi is used in the contact hole of pixel region2), form W/WSi2/ Si contact structures, avoid silicon
The Schottky barrier formed between tungsten because forming Schottky contacts, reduces contact resistance, so as to improve semiconductor devices
Electrology characteristic, while avoid the metallic pollution of pixel region.
It will be understood by those skilled in the art that in addition to technique and structure as illustrated, the disclosure also includes forming figure
As other any techniques and structure necessary to sensor.
Word "front", "rear", " top ", " bottom " in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word so used
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can with this institute
Those of description show or other are orientated in other different orientations and operated.
As used in this, word " exemplary " means " being used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
Preferable or favourable.Moreover, the disclosure is not by above-mentioned technical field, background technology, the content of the invention or embodiment
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance
Any small change caused by difference, environment influence and/or other factorses.Word " substantially " also allows by ghost effect, made an uproar
Caused by sound and the other actual Considerations being likely to be present in actual implementation with perfect or preferable situation
Between difference.
In addition, just to the purpose of reference, can with the similar terms such as " first " used herein, " second ", and
And thus it is not intended to limit.For example, unless clearly indicated by the context, be otherwise related to structure or element word " first ", "
Two " do not imply order or sequence with other such digital words.
It should also be understood that the word of "comprises/comprising" one is as used herein, illustrate pointed feature, entirety, step be present
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or the one or more of the other feature of increase, entirety, step, behaviour
Work, unit and/or component and/or combinations thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
Foregoing description can indicate to be " connected " or " coupling " element together or node or feature.As used herein
, unless otherwise expressly noted, " connection " means an element/node/feature with another element/node/feature in electricity
Above, mechanically, in logic or otherwise it is directly connected (or direct communication).Similarly, unless otherwise expressly noted,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or otherwise link to allow to interact, even if the two features may be not direct
Connection is also such.That is, " coupling " is intended to encompass the direct link of element or further feature and linked indirectly, including profit
With the connection of one or more intermediary elements.
It should be appreciated by those skilled in the art that the border between aforesaid operations is merely illustrative.Multiple operations
Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time
Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include the example below：
1st, a kind of imaging sensor, it is characterised in that including：
Substrate with pixel region, in the pixel region the substrate and/or among formed with semiconductor device
The component of part；And
The contact contacted with the component, on the pixel region of the substrate,
The metal of wherein described contact including filling contact hole, laying and change with what the component directly contacted
Kind resistive layer, wherein the component and the contact resistance improved between resistive layer be less than the component and the laying it
Between contact resistance.
2nd, the imaging sensor according to 1, it is characterised in that the improvement resistive layer is by chemical vapor deposition
Manage to deposit the layer for improving resistance material and being formed.
3rd, the imaging sensor according to 1 or 2, it is characterised in that described to improve the conductive compound that resistive layer is tungsten.
4th, the imaging sensor according to 1 or 2, it is characterised in that the improvement resistive layer is tungsten silicide or nitridation
Tungsten.
5th, the imaging sensor according to 1, it is characterised in that the metal is tungsten.
6th, the imaging sensor according to 1, it is characterised in that the laying only covers the side wall of the contact hole.
7th, the imaging sensor according to 1, it is characterised in that the laying can also play the work of diffusion impervious layer
With.
8th, the imaging sensor according to 1, it is characterised in that the laying includes titanium nitride layer.
9th, the imaging sensor according to 8, it is characterised in that the laying also includes titanium layer.
10th, the imaging sensor according to 1, it is characterised in that model of the thickness of the laying in 10nm to 20nm
In enclosing.
11st, the imaging sensor according to 1, it is characterised in that the thickness for improving resistive layer is 5nm to 20nm's
In the range of.
12nd, the imaging sensor according to 1, it is characterised in that the semiconductor devices include photodiode and/or
MOS transistor, and the component is included in grid that the substrate formed and/or what is formed among the substrate have
Source region.
13rd, the imaging sensor according to 12, it is characterised in that the substrate includes monocrystalline silicon, and/or the grid
Include source region and drain region including polysilicon, and/or the active area.
14th, a kind of method for manufacturing imaging sensor, it is characterised in that including：
Substrate with pixel region is provided, in the pixel region the substrate and/or among formed with partly leading
The component of body device；
Dielectric layer is formed on the pixel region of the substrate, and is formed and the structure in the dielectric layer
Contact hole corresponding to part, at least a portion of the component is exposed from the contact hole；And
Form the contact that is contacted with the component, wherein metal of the contact including filling contact hole, laying,
And the improvement resistive layer directly contacted with the component, wherein the component and the contact resistance improved between resistive layer
Less than the contact resistance between the component and the laying.
15th, the method according to 14, it is characterised in that the step of forming contact includes：Pass through chemical vapor deposition
Processing improves resistance material to deposit one layer, to be used as the improvement resistive layer.
16th, the method according to 14 or 15, it is characterised in that described to improve the conductive compound that resistive layer is tungsten.
17th, the method according to 14 or 15, it is characterised in that the improvement resistive layer is tungsten silicide or tungsten nitride.
18th, the method according to 14, it is characterised in that the metal is tungsten.
19th, the method according to 14, it is characterised in that the laying only covers the side wall of the contact hole.
20th, the method according to 14, it is characterised in that the laying can also play a part of diffusion impervious layer.
21st, the method according to 14, it is characterised in that the laying includes titanium nitride layer.
22nd, the method according to 21, it is characterised in that the laying also includes titanium layer.
23rd, the method according to 14, it is characterised in that the thickness of the laying is in the range of 10nm to 20nm.
24th, the method according to 14, it is characterised in that scope of the thickness for improving resistive layer in 5nm to 20nm
It is interior.
25th, the method according to 14, it is characterised in that the semiconductor devices includes photodiode and/or MOS is brilliant
Body pipe, and the component is included in the grid that the substrate is formed and/or the active area formed among the substrate.
26th, the method according to 25, it is characterised in that the substrate includes monocrystalline silicon, and/or the grid including more
Crystal silicon, and/or the active area include source region and drain region.
27th, the method according to 15, it is characterised in that the temperature in the chemical vapor deposition process arrives for 300
400 degrees Celsius.
28th, the method according to 15, it is characterised in that the reacting gas used in the chemical vapor deposition process
Including silicomethane (SiH4) and tungsten fluoride.
29th, the method according to 19, it is characterised in that the step of forming the contact includes：
With chemical vapor deposition process conformally titanium nitride layer, and to titanium nitride layer carve and be located at removing
The titanium nitride layer of contact hole bottom, so as to which the titanium nitride layer of the side wall of the remaining covering contact hole is the laying；
With physical vapour deposition (PVD) process another titanium nitride layer is deposited on the surface of the dielectric layer；
By the use of chemical vapor deposition process conformally deposit tungsten suicide layers to be used as the improvement resistive layer；And
Chemical vapor deposition tungsten carries out chemical mechanical polish process to fill the contact hole to tungsten.
30th, the method according to 29, it is characterised in that scope of the thickness of another titanium nitride layer in 5nm to 8nm
It is interior.
31st, a kind of imaging sensor, it is characterised in that including：
Substrate with pixel region, in the pixel region the substrate and/or among formed with semiconductor device
The component of part；And
The contact contacted with the component, on the pixel region of the substrate,
The metal of wherein described contact including filling contact hole and directly contacted with the component and the metal
Metal silicide layer.
32nd, a kind of method for manufacturing imaging sensor, it is characterised in that including：
Substrate with pixel region is provided, in the pixel region the substrate and/or among formed with partly leading
The component of body device；
Dielectric layer is formed on the pixel region of the substrate, and is formed and the structure in the dielectric layer
Contact hole corresponding to part, at least a portion of the component is exposed from the contact hole；And
The contact contacted with the component is formed, wherein the contact includes metal, the Yi Jiyu of filling contact hole
The metal silicide layer that the component and the metal directly contact.
33rd, the method according to 32, it is characterised in that the step of forming the contact includes：
With chemical vapor deposition process conformally deposited metal silicide layer；And
Chemical vapor deposition tungsten carries out chemical mechanical polish process to fill the contact hole to tungsten.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this area
Art personnel it should be understood that above example merely to illustrate, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out to embodiment without departing from the scope of the present disclosure and spirit.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
- A kind of 1. imaging sensor, it is characterised in that including：Substrate with pixel region, in the pixel region the substrate and/or among formed with semiconductor devices Component；AndThe contact contacted with the component, on the pixel region of the substrate,Wherein described contact includes the metal, laying and the improvement electricity directly contacted with the component of filling contact hole Resistance layer, wherein the component and the contact resistance improved between resistive layer are less than between the component and the laying Contact resistance.
- 2. imaging sensor according to claim 1, it is characterised in that the improvement resistive layer is to pass through chemical vapor deposition The layer that product processing is formed to deposit improvement resistance material.
- 3. imaging sensor according to claim 1 or 2, it is characterised in that described to improve the conducting that resistive layer is tungsten Compound.
- 4. imaging sensor according to claim 1 or 2, it is characterised in that it is described improvement resistive layer be tungsten silicide or Tungsten nitride.
- 5. imaging sensor according to claim 1, it is characterised in that the metal is tungsten.
- 6. imaging sensor according to claim 1, it is characterised in that the laying only covers the side of the contact hole Wall.
- 7. imaging sensor according to claim 1, it is characterised in that the laying can also play diffusion impervious layer Effect.
- 8. imaging sensor according to claim 1, it is characterised in that the laying includes titanium nitride layer.
- 9. imaging sensor according to claim 8, it is characterised in that the laying also includes titanium layer.
- 10. imaging sensor according to claim 1, it is characterised in that the thickness of the laying is in 10nm to 20nm In the range of.
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| CN201711088018.1A CN107871755A (en) | 2017-11-08 | 2017-11-08 | Imaging sensor and its manufacture method |
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| CN201711088018.1A CN107871755A (en) | 2017-11-08 | 2017-11-08 | Imaging sensor and its manufacture method |
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