CN107867715B - Preparation method of tin dioxide nanometer material for low concentration Nitrogen dioxide testing and products thereof and application - Google Patents
Preparation method of tin dioxide nanometer material for low concentration Nitrogen dioxide testing and products thereof and application Download PDFInfo
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- CN107867715B CN107867715B CN201711086339.8A CN201711086339A CN107867715B CN 107867715 B CN107867715 B CN 107867715B CN 201711086339 A CN201711086339 A CN 201711086339A CN 107867715 B CN107867715 B CN 107867715B
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 239000000463 material Substances 0.000 title claims abstract description 25
- 238000012360 testing method Methods 0.000 title claims abstract description 18
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 title claims abstract description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 26
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000003756 stirring Methods 0.000 claims abstract description 23
- 239000002086 nanomaterial Substances 0.000 claims abstract description 21
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 21
- 239000000084 colloidal system Substances 0.000 claims abstract description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 claims abstract description 13
- 229960000583 acetic acid Drugs 0.000 claims abstract description 13
- 239000012362 glacial acetic acid Substances 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 13
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims abstract description 13
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 11
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 239000011259 mixed solution Substances 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 235000019441 ethanol Nutrition 0.000 claims abstract description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 7
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 7
- 238000002604 ultrasonography Methods 0.000 claims abstract description 7
- 150000003746 yttrium Chemical class 0.000 claims abstract description 5
- 238000003980 solgel method Methods 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229910009523 YCl3 Inorganic materials 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- PCMOZDDGXKIOLL-UHFFFAOYSA-K yttrium chloride Chemical compound [Cl-].[Cl-].[Cl-].[Y+3] PCMOZDDGXKIOLL-UHFFFAOYSA-K 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 15
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 5
- -1 polytetrafluoroethylene Polymers 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001198 high resolution scanning electron microscopy Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/02—Oxides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/0037—NOx
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Medicinal Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a kind of preparation methods of tin dioxide nanometer material for low concentration Nitrogen dioxide testing and products thereof and application, and the SnO of doped yttrium is prepared using sol-gel method2Nano material, anhydrous stannic chloride and glacial acetic acid mixing, are added nitric acid, and gained mixed solution is added in deionized water；It is subsequently placed in ptfe autoclave, obtains SnO2Colloid；Yttrium salt is mixed with ethyl alcohol, and ultrasound obtains mixture, then by gained SnO2Colloid is added in mixture, and polyethylene glycol is added after stirring, and gained colloid is uniformly applied on ceramic tube, then roasts 2 ~ 3 hours in 450 ~ 550 DEG C of air environment high temperatures, obtains doped yttrium SnO2Nano material is tested for air-sensitive.The SnO of doped yttrium made from this method2Nano material can increase the internal flaw in material system, introduce more active sites, can significant increase SnO2The sensitivity of gas sensitive.
Description
Technical field
The present invention relates to gas sensor technology field, in particular to a kind of SnO of doped yttrium2The preparation side of nano material
Method, more particularly to a kind of preparation method of tin dioxide nanometer material for low concentration Nitrogen dioxide testing and products thereof and
Using.
Background technique
Metal oxide such as ZnO, SnO2、WO3Deng due to have have excellent performance, environment is friendly, resourceful, cheap
The advantages that, it is the relatively broad gas sensitive of research.Pass through the techniques such as metal oxide surface modification, metal/precious metal doping
The air-sensitive performance that material can be promoted has very extensive application in gas sensor field.
The key factor for determining the sensitivity of Semiconductor gas sensors material includes: specific surface area, constructs nanometer material by chemical method
Material, the contact for alloing material that there is biggish specific surface area to increase material with object gas, and then promote the sensitivity of material；
The regulation of vacancy/defect can promote the reactivity of object gas and sensitive material by increasing material internal defect, can be with
Promote the sensitivity of material.
The present invention is utilized in SnO2Inside introduces the biggish yttrium of ionic radius, can increase SnO2 matter crystal internal defect, can be big
Width improves SnO2The air-sensitive performance of nano material, and preparation process is simple, the development to semiconductor gas sensing device is pushed further into
And theoretical research has biggish value.
Summary of the invention
In order to overcome the deficiencies of the prior art, present invention aims at: provide a kind of for low concentration Nitrogen dioxide testing
The preparation method of tin dioxide nanometer material.
Still a further object of the present invention is: providing a kind of product of above method preparation.
Yet another object of that present invention is to: a kind of application of the said goods is provided.
A kind of preparation method of the tin dioxide nanometer material for low concentration Nitrogen dioxide testing, utilizes sol-gel
Method prepares the SnO of doped yttrium2Nano material, it includes the following steps:
Step 1: taking anhydrous stannic chloride and glacial acetic acid to mix, and under stirring, 20 ~ 60 microlitres of nitric acid is added, obtains
Mixed solution A；
Step 2: mixed solution obtained by step 1 is added in deionized water；It is subsequently placed in ptfe autoclave,
180 ~ 240 DEG C of reactions 20 ~ for 24 hours, it is down to room temperature to temperature, obtains SnO2Colloid；
Step 3: the yttrium salt for weighing 0.01 ~ 0.025mmol is mixed with the ethyl alcohol of 45 ~ 55mL, and 30 min of ultrasound are mixed
Object, then by SnO obtained by 10mL step 22Colloid is added in mixture, and after stirring 30min, the poly- second two of 0.08 ~ 0.2g is added
Alcohol, in 60 ~ 80 DEG C of 1 ~ 2h of stirring；
Step 4: colloid obtained by step 3 is uniformly applied on ceramic tube, then high in 450 ~ 550 DEG C of air environments
Temperature roasting 2 ~ 3 hours, obtains doped yttrium SnO2Nano material is tested for air-sensitive.
The method of the present invention simple possible, this method prepare SnO with hydro-thermal method2Then colloid introduces yttrium member inside colloid
Element utilizes polyethylene glycol as architecture adjusting control agent, realizes doped yttrium SnO2The preparation of nano material simultaneously regulates and controls internal flaw,
It is ppb grades of NO that test result, which shows that concentration may be implemented in this method,2Detection.
Anhydrous stannic chloride described in step 1 and step 2: glacial acetic acid: deionized water volume ratio be 1:0.8 ~ 1.2:5 ~
7。
Yttrium salt described in step 3 is YCl3·6H2O, Y (NO3)3·6H2The mixing of one of O or both arbitrary proportion.
The present invention provides a kind of tin dioxide nanometer material for low concentration Nitrogen dioxide testing, according to any of the above-described institute
The method of stating is prepared.
The present invention provides the application that a kind of tin dioxide nanometer material is used for low concentration Nitrogen dioxide testing.
The present invention is utilized in SnO2Inside introduces the biggish yttrium of ionic radius, can increase SnO2 matter crystal internal defect, can be big
Width improves SnO2The air-sensitive performance of nano material, and preparation process is simple, the development to semiconductor gas sensing device is pushed further into
And theoretical research has biggish value.
The method of the present invention prepares the SnO of doped yttrium using sol-gel method2Nano material, due to Y3+Ionic radius
(0.089 nm) is greater than Sn4+Ionic radius (0.069nm), therefore the doping of yttrium can be in SnO2It is introduced inside nano material more
Defect can increase the internal flaw in material system, introduce more active sites, can significant increase SnO2Gas sensitive it is sensitive
Degree.The SnO of this method preparation2It is the thin-film material of nano particle framework after 450 ~ 550 DEG C of heat treatment, therefore prepared by this method
Gas sensitive have biggish specific surface area.
Detailed description of the invention
Fig. 1 is doped yttrium SnO of the invention2The SEM of nano material schemes；
Fig. 2 is doped yttrium SnO of the invention2The high power SEM of nano material schemes；
Fig. 3 is the XRD diagram of doped yttrium SnO2 nano material of the invention.
Specific embodiment
Embodiment 1
It takes 10mL anhydrous stannic chloride and 10mL glacial acetic acid to mix, under stirring, 30 microlitres of nitric acid, stirring is added
After 30min, anhydrous stannic chloride and glacial acetic acid mixed solution are added in 50mL deionized water；It is anti-to be subsequently placed in polytetrafluoroethylene (PTFE)
It answers in kettle, 240 DEG C of reactions for 24 hours, are down to room temperature to temperature, obtain SnO2Colloid；
Weigh the YCl of 0.02mmol3·6H2O or Y (NO3)3·6H2O is mixed with the ethyl alcohol of 50mL, and 30 min of ultrasound are obtained
Mixture, then by the above-mentioned SnO of 10mL2Colloid is added in mixture, after stirring 30min, the polyethylene glycol of 0.2g is added, in 80
DEG C stirring 1.5h；Then it is uniformly applied on ceramic tube, is roasted 3 hours in 500 DEG C of air environment high temperatures, obtain doped yttrium
SnO2Nano material is tested for air-sensitive.
Fig. 1 and Fig. 2 is the SEM of doped yttrium SnO2 made from the present embodiment and high power SEM figure respectively, as seen from the figure,
Nano material prepared by the present invention forms the film of even compact in ceramic pipe surface, and film can be observed by receiving in high-resolution SEM
Rice grain is accumulated；Fig. 3 is the XRD diagram of sample made from the present embodiment, as seen from the figure, the XRD diffraction maximum of sample with
SnO2(JCPDS #41-1445) is corresponding, and there is no the peaks of yttrium oxide, this is because the additive amount of yttrium is considerably less, yttrium atom with
The mode of alternative dopings is entrained in SnO2Inside particle.
Sample obtained by the present embodiment is tested under various concentration using WS-30A type Testing system of gas-sensor built to NO2Gas
Response, operating temperature be 50 DEG C, minimal detectable concentration 100ppb, sensitivity 5.4.
Embodiment 2
It takes 10mL anhydrous stannic chloride and 8mL glacial acetic acid to mix, under stirring, 40 microlitres of nitric acid, stirring is added
After 30min, anhydrous stannic chloride and glacial acetic acid mixed solution are added in 60mL deionized water；It is anti-to be subsequently placed in polytetrafluoroethylene (PTFE)
It answers in kettle, 200 DEG C of reactions for 24 hours, are down to room temperature to temperature, obtain SnO2Colloid；
Weigh the YCl of 0.01mmol3·6H2O is mixed with the ethyl alcohol of 50mL, and 30 min of ultrasound obtain mixture, then will
The above-mentioned SnO of 10mL2Colloid is added in mixture, after stirring 30min, the polyethylene glycol of 0.15g is added, in 80 DEG C of stirring 1.5h；
Then it is uniformly applied on ceramic tube, is roasted 3 hours in 450 DEG C of air environment high temperatures, obtain doped yttrium SnO2Nano material is used
It is tested in air-sensitive.
Sample obtained by the present embodiment is tested under various concentration using WS-30A type Testing system of gas-sensor built to NO2Gas
Response, operating temperature be 50 DEG C, minimal detectable concentration 100ppb, sensitivity 3.28.
Embodiment 3
It takes 10mL anhydrous stannic chloride and 12mL glacial acetic acid to mix, under stirring, 60 microlitres of nitric acid, stirring is added
After 30min, anhydrous stannic chloride and glacial acetic acid mixed solution are added in 70mL deionized water；It is anti-to be subsequently placed in polytetrafluoroethylene (PTFE)
It answers in kettle, 220 DEG C of reaction 20h are down to room temperature to temperature, obtain SnO2Colloid；
Weigh the YCl of 0.01mmol3·6H2O is mixed with the ethyl alcohol of 50mL, and 30 min of ultrasound obtain mixture, then will
The above-mentioned SnO of 10mL2Colloid is added in mixture, after stirring 30min, the polyethylene glycol of 0.15g is added, in 80 DEG C of stirring 1.5h；
Then it is uniformly applied on ceramic tube, is roasted 2 hours in 550 DEG C of air environment high temperatures, obtain doped yttrium SnO2Nano material is used
It is tested in air-sensitive.
Sample obtained by the present embodiment is tested under various concentration using WS-30A type Testing system of gas-sensor built to NO2Gas
Response, operating temperature be 50 DEG C, minimal detectable concentration 200ppb, sensitivity 3.76.
Embodiment 4
It takes 10mL anhydrous stannic chloride and 8mL glacial acetic acid to mix, under stirring, 60 microlitres of nitric acid, stirring is added
After 30min, anhydrous stannic chloride and glacial acetic acid mixed solution are added in 50mL deionized water；It is anti-to be subsequently placed in polytetrafluoroethylene (PTFE)
It answers in kettle, 180 DEG C of reactions for 24 hours, are down to room temperature to temperature, obtain SnO2Colloid；
Weigh the YCl of 0.025mmol3·6H2O is mixed with the ethyl alcohol of 55mL, and 30 min of ultrasound obtain mixture, then will
The above-mentioned SnO of 10mL2Colloid is added in mixture, after stirring 30min, the polyethylene glycol of 0.2g is added, in 80 DEG C of stirring 2h；So
It is uniformly applied on ceramic tube afterwards, is roasted 3 hours in 550 DEG C of air environment high temperatures, obtain doped yttrium SnO2Nano material is used for
Air-sensitive test.
Sample obtained by the present embodiment is tested under various concentration using WS-30A type Testing system of gas-sensor built to NO2Gas
Response, operating temperature be 50 DEG C, minimal detectable concentration 250ppb, sensitivity 4.82.
Claims (4)
1. a kind of preparation method of the tin dioxide nanometer material for low concentration Nitrogen dioxide testing, which is characterized in that utilize
Sol-gel method prepares the SnO of doped yttrium2Nano material includes the following steps:
Step 1: taking anhydrous stannic chloride and glacial acetic acid to mix, and under stirring, 20 ~ 60 microlitres of nitric acid is added, is mixed
Solution A；
Step 2: mixed solution obtained by step 1 is added in deionized water；It is subsequently placed in ptfe autoclave, 180 ~
240 DEG C of reactions 20 ~ for 24 hours, it is down to room temperature to temperature, obtains SnO2Colloid；
Step 3: the yttrium salt for weighing 0.01 ~ 0.025mmol is mixed with the ethyl alcohol of 45 ~ 55mL, and 30 min of ultrasound obtain mixture,
Then by SnO obtained by 10mL step 22Colloid is added in mixture, and after stirring 30min, the polyethylene glycol of 0.08 ~ 0.2g is added,
In 60 ~ 80 DEG C of 1 ~ 2h of stirring；
Step 4: colloid obtained by step 3 is uniformly applied on ceramic tube, is then roasted in 450 ~ 550 DEG C of air environment high temperatures
It burns 2 ~ 3 hours, obtains doped yttrium SnO2Nano material is tested for air-sensitive；
Anhydrous stannic chloride described in step 1 and step 2: glacial acetic acid: deionized water volume ratio is 1:0.8 ~ 1.2:5 ~ 7.
2. the preparation method for the tin dioxide nanometer material of low concentration Nitrogen dioxide testing according to claim 1,
Be characterized in that: yttrium salt described in step 3 is YCl3·6H2O, Y (NO3)3·6H2The mixing of one of O or both arbitrary proportion.
3. a kind of tin dioxide nanometer material for low concentration Nitrogen dioxide testing, it is characterised in that according to claim 1 or 2
The method is prepared.
4. tin dioxide nanometer material is used for the application of low concentration Nitrogen dioxide testing according to claim 3.
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| CN201711086339.8A CN107867715B (en) | 2017-11-07 | 2017-11-07 | Preparation method of tin dioxide nanometer material for low concentration Nitrogen dioxide testing and products thereof and application |
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| CN111056566B (en) * | 2019-12-20 | 2022-11-01 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of tin dioxide nano material, product and application thereof |
| CN111362299A (en) * | 2020-05-13 | 2020-07-03 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of yttrium-doped modified tin dioxide nano material, product and application thereof |
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| CN1528670A (en) * | 2003-10-10 | 2004-09-15 | 桂林电子工业学院 | In2O3 and ITO monodisperse nano powder hydrothermal preparation method |
| CN103539197A (en) * | 2013-10-12 | 2014-01-29 | 中国科学院深圳先进技术研究院 | Antimony-doped tin dioxide nano-material and preparation method thereof |
| CN104332312A (en) * | 2014-10-25 | 2015-02-04 | 陕西玉航电子有限公司 | Manufacturing method of dye-sensitized solar cell |
| CN106449178A (en) * | 2016-11-24 | 2017-02-22 | 桂林理工大学 | Method for preparing sulfonated graphene oxide/tin oxide/polyaniline composite material |
-
2017
- 2017-11-07 CN CN201711086339.8A patent/CN107867715B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1528670A (en) * | 2003-10-10 | 2004-09-15 | 桂林电子工业学院 | In2O3 and ITO monodisperse nano powder hydrothermal preparation method |
| CN103539197A (en) * | 2013-10-12 | 2014-01-29 | 中国科学院深圳先进技术研究院 | Antimony-doped tin dioxide nano-material and preparation method thereof |
| CN104332312A (en) * | 2014-10-25 | 2015-02-04 | 陕西玉航电子有限公司 | Manufacturing method of dye-sensitized solar cell |
| CN106449178A (en) * | 2016-11-24 | 2017-02-22 | 桂林理工大学 | Method for preparing sulfonated graphene oxide/tin oxide/polyaniline composite material |
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| Title |
|---|
| SnO2气敏材料的制备及其对NO2气敏性能研究;倪禹行;《中国优秀硕士学位论文全文数据库工程科技I辑》;20170915;第27-28页 |
| 钇离子掺杂制备二氧化锡及其表征;满丽莹等;《山东陶瓷》;20101231;参见实验部分 |
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