CN107863446B - A kind of OLED device structure and preparation method - Google Patents
A kind of OLED device structure and preparation method Download PDFInfo
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- CN107863446B CN107863446B CN201711108575.5A CN201711108575A CN107863446B CN 107863446 B CN107863446 B CN 107863446B CN 201711108575 A CN201711108575 A CN 201711108575A CN 107863446 B CN107863446 B CN 107863446B
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention relates to a kind of OLED device structure and preparation method, which includes a substrate；One first water oxygen barrier layer is set to above substrate, by the stacking of two kinds of films with high low-refraction, on the one hand for increasing the light extraction efficiency of OLED transmitting light, encapsulated layer is on the other hand used as, for obstructing steam and oxygen；One OLED cell is set to above the first water oxygen barrier layer；One second water oxygen barrier layer is set to above OLED cell, by the stacking of two kinds of films with high low-refraction, on the one hand for reflecting oled light, encapsulated layer is on the other hand used as, for obstructing steam and oxygen.Compared with prior art, although structure is complicated by the present invention, easy to operate, material easily bought, significant effect, can effectively improve service life and the light extraction efficiency of OLED device.
Description
Technical field
The present invention relates to Organic Light Emitting Diode fields, more particularly, to a kind of OLED device structure and preparation method.
Background technique
Organic Light Emitting Diode (Organic Light Emitting Display, abbreviation OLED) is as a new generation's display
Technology has many advantages, such as that luminous active, fast response time, contrast are high, and most attractive is that flexibility may be implemented in it, these
Feature makes it have wide practical use in illumination and display field.But luminous organic material is to chemical environment, physical environment
Sensitivity, especially sensitive to water oxygen, device is easy to aging, and service life is short.Therefore, the scale of mass production of Yao Shixian OLED device must
It must solve the problems, such as its package reliability.
At present frequently with the packaging method OLED encapsulation technology that has (1) traditional be usually to device add a cover board, and
Desiccant is attached on the inside of cover board, then is combined substrate and cover board by sealants such as epoxy resin.Although this method has
Effect, but it is very clumsy, and the light extraction efficiency of OLED can be reduced, so that brightness declines.(2) thin-film package.Currently employed is thin
Film encapsulation technology overcomes the sealant disadvantage poor to the barrier property of vapor and oxygen, preferably improves encapsulation effect
Fruit, but barrier property to vapor and oxygen or not high enough, the service life of device is not still able to satisfy commercialized demand.
In addition, often will affect the light transmittance of device using organic/inorganic stacked package or inorganic/inorganic stacked package, lead to device
Light extraction efficiency reduce, to influence light emission luminance and luminous efficiency.
Above shortcomings, the present invention combination inorganic thin film encapsulation advantage and optically thin are encapsulated for organic luminescent device
The characteristic of film proposes a kind of OLED device structure and preparation method.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of OLED device structures
And preparation method, although structure is complicated, easy to operate, material easily bought, significant effect, can effectively improve the longevity of OLED device
Life and light extraction efficiency.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of OLED device structure, including set gradually from the bottom to top substrate, the first water oxygen barrier layer, OLED cell and
Second water oxygen barrier layer；
The first water oxygen barrier layer passes through the first low refractive index film and the first high refractive index film from the bottom to top successively
It is alternatively formed by alternate cycle number m+0.5, m value is positive integer, and 0.5 indicates that the top of the first water oxygen barrier layer is first low
Index film, the refractive index of the refractive index of first low refractive index film less than the first high refractive index film；
The second water oxygen barrier layer passes through the second high refractive index film and the second low refractive index film from the bottom to top successively
It is alternatively formed by alternate cycle number n+0.5, n value is positive integer, and 0.5 indicates that the top of the second water oxygen barrier layer is second high
Index film, the refractive index of the refractive index of second low refractive index film less than the second high refractive index film.
The exchange of the position of the first water oxygen barrier layer and the second water oxygen barrier layer.
The ranges of indices of refraction of first low refractive index film and the second low refractive index film is 1-2, the described first high folding
The ranges of indices of refraction for penetrating rate film and the second high refractive index film is 1.8-3；
The refractive index difference range of first low refractive index film and the first high refractive index film is 0.8-2, described the
The refractive index difference range of two low refractive index films and the second high refractive index film is 0.8-2.
The first water oxygen barrier layer to the light transmittance of the light of required transmission 50% or more, the second water oxygen barrier layer
To the reflectivity of the light limited 50% or more.
Positive integer n and m value range are 1-10.
The combination of materials of first low refractive index film and the first high refractive index film includes but is not limited to: Al2O3/
TiO2、SiO2/TiO2、Al2O3/Ta2O5、SiO2/HfO2、Al2O3/HfO2；
The combination of materials of second high refractive index film and the second low refractive index film includes but is not limited to: TiO2/
Al2O3、TiO2/SiO2、Ta2O5/Al2O3、HfO2/SiO2、HfO2/Al2O3。
The OLED cell includes the anode set gradually from the bottom to top, hole injection layer, hole transmission layer, organic light emission
Layer, electron transfer layer, electron injecting layer and cathode.
The section of the first water oxygen barrier layer and anode is in L-shaped, and the short side of the first water oxygen barrier layer is located at electronics
On implanted layer, the long side of the first water oxygen barrier layer is straight down and the long side inner wall of the first water oxygen barrier layer is close to hole injection
The vertical end face of layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer and cathode, the long side of the anode
Under hole injection layer, the short side of anode straight up and be close to the first water oxygen barrier layer long side end outer wall.
The OLED device structure provides blue, red or green monochromatic source, and separately designs first according to tri- color of RGB
The layer barrier film constructions of water oxygen barrier layer and the second water oxygen barrier layer, realize full-color display.
A kind of preparation method of above-mentioned OLED device structure, comprising the following steps:
S1: then substrate cleaning, drying are carried out plasma treatment or UV processing by prepared substrate；
S2: the first water oxygen barrier layer is prepared using atomic layer deposition or e-beam evaporation；
S3: OLED cell is prepared on the first water oxygen barrier layer；
S4: the second water oxygen barrier layer is prepared using atomic layer deposition or e-beam evaporation；
Wherein, before preparing the first water oxygen barrier layer, it is first determined the first low refractive index film and the first high refractive index
The combination of materials of film, further according to the emission wavelength of OLED cell, using film simulation software to the first low refractive index film and
The stack thickness and alternate cycle number of first high refractive index film are emulated, and the first water oxygen barrier layer is made to reach maximum light transmission
Rate；
Before preparing the second water oxygen barrier layer, it is first determined the second high refractive index film and the second low refractive index film
Combination of materials is low to the second high refractive index film and second using film simulation software further according to the emission wavelength of OLED cell
The stack thickness and alternate cycle number of index film are emulated, and the second water oxygen barrier layer is made to reach maximum reflectivity.
Compared with prior art, the invention has the following advantages that
1, encapsulating material is easily obtained, is pollution-free, and production method is simple, it is most important that, the present invention can be not only used for
OLED device encapsulation, and can be used for improving the light extraction efficiency of device, the service life of OLED device is effectively improved, the two is simultaneous
?.
2, the first water oxygen barrier layer with high transparency is formed by the stacking of two kinds of films with high low-refraction
On the other hand sandwich low/high/low is used as encapsulated layer, for hindering on the one hand for increasing the light extraction efficiency of OLED transmitting light
Water proof vapour and oxygen, while having the second water oxygen barrier layer of high optical reflectivity by two kinds of films with high low-refraction
It stacks, forms high/low/high sandwich, on the one hand for reflecting oled light, encapsulated layer is on the other hand used as, for obstructing water
Vapour and oxygen.
3, the present invention exchanges the position of the first water oxygen barrier layer and the second water oxygen barrier layer, and OLED device can be realized
Top shines or bottom shines.
4, OLED device structure provides monochromatic source, can be blue, red or green, to realize full-color display, only
It needs to separately design corresponding layer barrier film constructions to tri- color of RGB, it is practical.
5, the section of the first water oxygen barrier layer and anode is in L-shaped, and encapsulation side is realized in the design of this L-shaped structure,
The functional layer of OLED device is protected, such design can more obstruct water oxygen than simple laminated construction, to improve the longevity of device
Life.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of OLED device structure of the present invention；
Fig. 2 is the schematic cross-section of the first water oxygen barrier layer used in the present embodiment；
Fig. 3 is the schematic cross-section of the second water oxygen barrier layer used in the present embodiment；
Fig. 4 is the diagrammatic cross-section of the OLED cell used in the present embodiment.
In figure, 01: substrate；02: the first water oxygen barrier layer；021: the first low refractive index film；022: the first high refractive index
Film；03:OLED unit；031: anode；032: hole injection layer；033: hole transmission layer；034: organic luminous layer；035: electricity
Sub- transport layer；036: electron injecting layer；037: cathode；04: the second water oxygen barrier layer；041: the second high refractive index film；042:
Second low refractive index film.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment one
As shown in Figure 1, a kind of OLED device structure, the OLED device to shine the bottom of suitable for, comprising:
One substrate 01, the substrate 01 include glass substrate or polymeric substrates；
The first water oxygen barrier layer 02 with high transparency is set to 01 top of substrate, as shown in Fig. 2, first water oxygen
Barrier layer 02 successively presses alternate cycle number m by the first low refractive index film 021 and the first high refractive index film 022 from the bottom to top
+ 0.5 is alternatively formed, and m value is positive integer, and 0.5 indicates that the top of the first water oxygen barrier layer 02 is the first low refractive index film
021, i.e., it is in film layer to plate one layer of low refractive index film more, sandwich low/high/low is formed, the first low refractive index film 021
Less than the refractive index of the first high refractive index film 022, which is used for refractive index as encapsulated layer
Steam and oxygen are obstructed, on the other hand for increasing the light extraction efficiency of OLED transmitting light；
OLED cell 03 is set to 02 top of the first water oxygen barrier layer, as shown in figure 4, the OLED cell 03 includes under
The supreme anode 031 set gradually, hole injection layer 032, hole transmission layer 033, organic luminous layer 034, electron transfer layer
035, electron injecting layer 036 and cathode 037；
The second water oxygen barrier layer 04 with high optical reflectivity is set to 03 top of OLED cell, as shown in figure 3, should
Second water oxygen barrier layer 04 is by the second high refractive index film 041 and the second low refractive index film 042 from the bottom to top successively by friendship
It is alternatively formed for periodicity n+0.5, n value is positive integer, and 0.5 indicates that the top of the second water oxygen barrier layer 04 is the second high folding
Penetrate rate film 041, i.e., it is in film layer to plate one layer of high refractive index film more, form high/low/high sandwich, the second low-refraction
The refractive index of film 042 is less than the refractive index of the second high refractive index film 041, and 04 one side of the second water oxygen barrier layer is for anti-
Oled light is penetrated, encapsulated layer is on the other hand used as, for obstructing steam and oxygen.
Two kinds of films in first water oxygen barrier layer 02 and the second water oxygen barrier layer 04 answer compactness high, to the folding of visible light
It is as big as possible to penetrate rate difference, it is preferred that the refractive index difference of the first low refractive index film 021 and the first high refractive index film 022
Range is 0.8-2, such as: 1.5, the refractive index difference range of the second low refractive index film 042 and the second high refractive index film 041
For 0.8-2, such as: 1.5, the ranges of indices of refraction of the first low refractive index film 021 and the second low refractive index film 042 is 1-2, the
The ranges of indices of refraction of one high refractive index film 022 and the second high refractive index film 041 is 1.8-3.Wherein, the first low-refraction is thin
The combination of materials of film 021 and the first high refractive index film 022 includes but is not limited to: Al2O3/TiO2、SiO2/TiO2、Al2O3/
Ta2O5、SiO2/HfO2、Al2O3/HfO2；The combination of materials packet of second high refractive index film 041 and the second low refractive index film 042
It includes but is not limited to: TiO2/Al2O3、TiO2/SiO2、Ta2O5/Al2O3、HfO2/SiO2、HfO2/Al2O3。
Positive integer n and m value range are 1-10.
The section of first water oxygen barrier layer 02 and anode 031 is in L-shaped, and the short side of the first water oxygen barrier layer 02 is located at electricity
On sub- implanted layer 036, the long side of the first water oxygen barrier layer 02 is straight down and the long side inner wall of the first water oxygen barrier layer 02 is tight
Paste hole injection layer 032, hole transmission layer 033, organic luminous layer 034, electron transfer layer 035, electron injecting layer 036 and cathode
The long side of 037 vertical end face, anode 031 is located under hole injection layer 032, and the short side of anode 031 straight up and is close to
The long side end outer wall of first water oxygen barrier layer 02.Encapsulation side is realized in the design of this L-shaped structure, protects the function of OLED device
Ergosphere, such design can more obstruct water oxygen than simple laminated construction, to improve the service life of device.
The OLED device structure provides blue, red or green monochromatic source, to realize full-color display, it is only necessary to right
Tri- color of RGB, which separately designs the first water oxygen barrier layer 02 and the layer barrier film constructions of the second water oxygen barrier layer 04, (there is water oxygen to obstruct function
Can), such as: the RGB(RGB of design the first water oxygen barrier layer 02 and the second water oxygen barrier layer 04) three color light transmittances.
The preparation method of above-mentioned OLED device structure the following steps are included:
S1: substrate 01 is cleaned, drying, then carries out plasma treatment or UV(Ultra-Violet by prepared substrate 01
Ray, ultraviolet light) processing；
S2: the first water oxygen barrier layer 02 is prepared using atomic layer deposition or e-beam evaporation；
S3: OLED cell 03 is prepared on the first water oxygen barrier layer 02, is specifically had: beaten using vacuum coating, spin coating, ink-jet
The combination of print and blade coating or above method, is sequentially prepared anode 031, hole injection layer 032, hole transmission layer from the bottom to top
033, organic luminous layer 034, electron transfer layer 035, electron injecting layer 036 and cathode 037；
S4: the second water oxygen barrier layer 04 is prepared using atomic layer deposition or e-beam evaporation；
Wherein, before preparing the first water oxygen barrier layer 02, it is first determined the first low refractive index film 021 and the first high folding
The combination of materials for penetrating rate film 022, further according to the emission wavelength of OLED cell 03, using film simulation software to the first low refraction
The stack thickness and alternate cycle number of rate film 021 and the first high refractive index film 022 are emulated, and the first water oxygen barrier layer is made
02 reaches maximum light transmittance, it is preferred that the first water oxygen barrier layer 02 to the light transmittance of the light of required transmission 50% or more, example
Such as 70%, 90%；
Before preparing the second water oxygen barrier layer 04, it is first determined the second high refractive index film 041 and the second low-refraction
The combination of materials of film 042 is thin to the second high refractive index using film simulation software further according to the emission wavelength of OLED cell 03
The stack thickness and alternate cycle number of film 041 and the second low refractive index film 042 are emulated, and the second water oxygen barrier layer 04 is reached
To maximum reflectivity, it is preferred that the reflectivity of second 04 pair of light limited of water oxygen barrier layer 50% or more, such as 70%,
90%。
In the figure in order to indicate the thickness for being clearly exaggerated layer and region, but should not be considered as strictly as schematic diagram
Reflect the proportionate relationship of geometric dimension.It is the schematic diagram of idealized embodiments of the invention with reference to figure, it is real shown in the present invention
Applying example should not be considered limited to the specific shape in region shown in figure, but (for example manufacture including obtained shape
Caused deviation).It is indicated in the present embodiment with rectangle, the expression in figure is schematical, but this should not be considered as limiting
The scope of the present invention processed.
It is detailed below in conjunction with drawings and examples in order to allow those skilled in the art to better understand technical solution of the present invention
Illustrate a kind of OLED device and its packaging method.Preferably, the substrate 01 of OLED device uses PET base in the embodiment of the present invention
Plate；034 material of organic luminous layer is Alq3, glow；First water oxygen barrier layer 02 is 1.5 Al stacked2O3/TiO2Structure is thick
Degree is respectively 104nm/73nm, and the feux rouges close to 100% can be made to penetrate；Second water oxygen barrier layer 04 is 5.5 TiO stacked2/
Al2O3Structure, thickness are respectively 73nm/104nm, are greater than 90% to the reflectivity of feux rouges；First water oxygen barrier layer 02 and the second water
Oxygen barrier layer 04 is all made of the preparation of ALD (atomic layer deposition) method；037 material of cathode is metal Al.
The present invention provides preferred embodiment, but should not be considered limited to embodiment set forth herein.In the figure in order to
It is clearly exaggerated the thickness of layer and region, but is closed as the ratio that schematic diagram should not be considered as strictly reflecting geometric dimension
System.
It is the schematic diagram of idealized embodiments of the invention with reference to figure herein, embodiment shown in the present invention should not be recognized
For the specific shape for being only limitted to region shown in figure, but including obtained shape, such as deviation caused by manufacturing.At this
It is indicated in embodiment with rectangle, the expression in figure is schematical, but this should not be considered as limiting the scope of the invention.
The preparation method of OLED device structure includes the following steps: in embodiment
(1) prepare pet substrate 01, cleaned, dried, then carry out plasma treatment or UV handles 15min；
(2) water oxygen barrier layer 1, i.e., 1.5 Al stacked are plated on substrate 01 using atomic layer deposition2O3/TiO2Structure is thick
Degree is respectively 104nm/73nm.Wherein, for Al2O3, the precursors used is TMA and H2The burst length of O, TMA is
0.2s, N2Purge time is 6s, H2The burst length of O is 0.15s, N2Purge time is 10s, and reaction temperature is 90 DEG C, recurring number
It is 1100.And for TiO2, the precursors used is TiCl4And H2O, TiCl4Burst length be 0.3s, N2Purge time
For 60s, H2The burst length of O is 0.3s, N2Purge time is 60s, and reaction temperature is 90 DEG C, recurring number 2000；
(4) ito anode 031 is plated using magnetron sputtering method；
(5) spin coating hole injection layer 032 material PEDOT, low speed 300r, time 10s, high speed 3000r, time 50s, so
It is annealed 15 minutes with 120 DEG C afterwards；
(6) 033 material NPB of spin coating hole transmission layer, with a thickness of 50nm；
(7) 034 materials A lq of spin coating organic luminous layer3, low speed 300r, high speed 2000r, the time is 10s and 50s respectively,
It anneals again, with a thickness of 80nm；
(8) 035 materials A lq of spin coating electron transfer layer3, with a thickness of 20nm；
(9) 036 material Ba of electron injecting layer is prepared using vacuum vapour deposition, with a thickness of 6nm；
(10) cathode 037Al is plated using vacuum vapour deposition, with a thickness of 150nm；
(11) the first water oxygen barrier layer 02, i.e., 5.5 TiO stacked are plated using atomic layer deposition method2/Al2O3Structure is thick
Degree is respectively 73nm/104nm.Wherein, for Al2O3, TMA(trimethyl aluminium) burst length be 0.2s, N2Purge time is
6s, H2The burst length of O is 0.15s, N2Purge time is 10s, and reaction temperature is 90 DEG C, recurring number 1100.And for
TiO2, TiCl4Burst length be 0.3s, N2Purge time is 60s, H2The burst length of O is 0.3s, N2Purge time is 10s,
Reaction temperature is 90 DEG C, recurring number 2000.
Above-listed preferred embodiment, has been further described the object, technical solutions and advantages of the present invention, is answered
Understand, the foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Embodiment two
The difference between this embodiment and the first embodiment lies in the first water oxygen barrier layer 02 and the second water in the OLED device structure
The position of oxygen barrier layer 04 is exchanged, and setting has the second water oxygen barrier layer 04 of high optical reflectivity above substrate 01,
Setting has the first water oxygen barrier layer 02 of high transparency above OLED cell 03, suitable for pushing up luminous OLED device.Specifically
Structure has:
The section of second water oxygen barrier layer 04 and anode 031 is in L-shaped, and the short side of the second water oxygen barrier layer 04 is located at electricity
On sub- implanted layer 036, the long side of the second water oxygen barrier layer 04 is straight down and the long side inner wall of the second water oxygen barrier layer 04 is tight
Paste hole injection layer 032, hole transmission layer 033, organic luminous layer 034, electron transfer layer 035, electron injecting layer 036 and cathode
The long side of 037 vertical end face, anode 031 is located under hole injection layer 032, and the short side of anode 031 straight up and is close to
The long side end outer wall of second water oxygen barrier layer 04.
Remaining structure is as in the first embodiment, repeat no more.
Claims (7)
1. a kind of OLED device structure, which is characterized in that including set gradually from the bottom to top substrate, the first water oxygen barrier layer,
OLED cell and the second water oxygen barrier layer；
The first water oxygen barrier layer is by the first low refractive index film and the first high refractive index film from the bottom to top successively by friendship
It is alternatively formed for periodicity m+0.5, m value is positive integer, and 0.5 indicates that the top of the first water oxygen barrier layer is the first low refraction
Rate film, the refractive index of the refractive index of first low refractive index film less than the first high refractive index film；
The second water oxygen barrier layer is by the second high refractive index film and the second low refractive index film from the bottom to top successively by friendship
It is alternatively formed for periodicity n+0.5, n value is positive integer, and 0.5 indicates that the top of the second water oxygen barrier layer is the second high refraction
Rate film, the refractive index of the refractive index of second low refractive index film less than the second high refractive index film；
The OLED cell include the anode set gradually from the bottom to top, hole injection layer, hole transmission layer, organic luminous layer,
Electron transfer layer, electron injecting layer and cathode；The section of the second water oxygen barrier layer and anode is in L-shaped, the second water oxygen
The short side of barrier layer is located on electron injecting layer, and the long side of the second water oxygen barrier layer is straight down and the first water oxygen barrier layer
Long side inner wall is close to the perpendicular of hole injection layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer and cathode
The long side in straight end face, the anode is located under hole injection layer, and the short side of anode is straight up and the first water oxygen of abutting obstructs
The long side end outer wall of layer；
The preparation method of the OLED device structure, includes the following steps:
S1: then substrate cleaning, drying are carried out plasma treatment or UV processing by prepared substrate；
S2: the first water oxygen barrier layer is prepared using atomic layer deposition or e-beam evaporation；
S3: OLED cell is prepared on the first water oxygen barrier layer；
S4: the second water oxygen barrier layer is prepared using atomic layer deposition or e-beam evaporation；
Wherein, before preparing the first water oxygen barrier layer, it is first determined the first low refractive index film and the first high refractive index film
Combination of materials, further according to the emission wavelength of OLED cell, using film simulation software to the first low refractive index film and first
The stack thickness and alternate cycle number of high refractive index film are emulated, and the first water oxygen barrier layer is made to reach maximum light transmittance；
Before preparing the second water oxygen barrier layer, it is first determined the material of the second high refractive index film and the second low refractive index film
Combination, further according to the emission wavelength of OLED cell, using film simulation software to the second high refractive index film and the second low refraction
The stack thickness and alternate cycle number of rate film are emulated, and the second water oxygen barrier layer is made to reach maximum reflectivity.
2. a kind of OLED device structure according to claim 1, which is characterized in that the first water oxygen barrier layer and second
The position of water oxygen barrier layer is exchanged.
3. a kind of OLED device structure according to claim 1, which is characterized in that first low refractive index film and
The ranges of indices of refraction of two low refractive index films is 1-2, the refraction of first high refractive index film and the second high refractive index film
Rate range is 1.8-3；
The refractive index difference range of first low refractive index film and the first high refractive index film is 0.5-2, and described second is low
The refractive index difference range of index film and the second high refractive index film is 0.5-2.
4. a kind of OLED device structure according to claim 1, which is characterized in that the light transmission of the first water oxygen barrier layer
Rate is 70% or more, and the reflectivity of the second water oxygen barrier layer is 70% or more.
5. a kind of OLED device structure according to claim 1, which is characterized in that positive integer n and m value range are 1-
10。
6. a kind of OLED device structure according to claim 1, which is characterized in that first low refractive index film and
The combination of materials of one high refractive index film includes but is not limited to: Al2O3/TiO2、SiO2/TiO2、Al2O3/Ta2O5、SiO2/HfO2、
Al2O3/HfO2；
The combination of materials of second high refractive index film and the second low refractive index film includes but is not limited to: TiO2/Al2O3、
TiO2/SiO2、Ta2O5/Al2O3、HfO2/SiO2、HfO2/Al2O3。
7. a kind of OLED device structure according to claim 1, which is characterized in that OLED device structure offer blue,
Red or green monochromatic source, and separately design according to tri- color of RGB the resistance of the first water oxygen barrier layer and the second water oxygen barrier layer
Membrane configuration realizes full-color display.
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| CN203589031U (en) * | 2013-10-15 | 2014-05-07 | 昆山工研院新型平板显示技术中心有限公司 | Anti-laser-damage thin film structure for AMOLED polymer substrate |
| CN106684256A (en) * | 2016-12-23 | 2017-05-17 | 上海天马有机发光显示技术有限公司 | Display panel and fabrication method thereof |
| CN107123753A (en) * | 2017-05-15 | 2017-09-01 | 福州大学 | A kind of film encapsulation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN203589031U (en) * | 2013-10-15 | 2014-05-07 | 昆山工研院新型平板显示技术中心有限公司 | Anti-laser-damage thin film structure for AMOLED polymer substrate |
| CN106684256A (en) * | 2016-12-23 | 2017-05-17 | 上海天马有机发光显示技术有限公司 | Display panel and fabrication method thereof |
| CN107123753A (en) * | 2017-05-15 | 2017-09-01 | 福州大学 | A kind of film encapsulation method |
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