CN107863411A - Polarization imaging detector - Google Patents
Polarization imaging detector Download PDFInfo
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- CN107863411A CN107863411A CN201710917506.2A CN201710917506A CN107863411A CN 107863411 A CN107863411 A CN 107863411A CN 201710917506 A CN201710917506 A CN 201710917506A CN 107863411 A CN107863411 A CN 107863411A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
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Abstract
The invention provides a kind of polarization imaging detector, and for realizing ultraviolet polarization imaging detection, it includes：UV, visible light light conversion film, for optionally absorbing the ultraviolet light of particular polarization and being converted into the visible ray of identical polarization direction；Micronano optical structure, for optionally transmiting the visible ray of the identical polarization direction；And image device, for detecting the visible ray of the identical polarization direction via micronano optical structure transmission.
Description
Technical field
The present invention relates to polarization imaging detector, and in particular to a kind of to be polarized based on the ultraviolet of Quantum dot polarization luminescent film
As detector.
Background technology
Ultraviolet imagery Detection Techniques are an important photoelectron technologies, and ultraviolet imagery detector is to believe ultraviolet radiant light
Number be converted to electric signal and the photodetector being imaged.Ultraviolet detection imaging technique utilizes the ultraviolet feature (spectrum for detecting target
Wave band, feature of image), analyzed with reference to big data, the identification and analysis to detecting target can be improved.Ultraviolet detection imaging technique should
Quite varied with field, in military aspect, ultraviolet detection image device coordinates with the detection means such as visible, infrared, can be achieved multiple
The omnidirectional detection of target under heterocycle border.Using Seeds of First Post-flight, it is pre- that ultraviolet detection image device can carry out early stage to ballistic missile
Alert and tracking.In addition, ultraviolet detection image device can also be carried out to the vanishing target in the urban operations such as sniper rifle, rocket projectile
Detection and positioning.At civilian aspect, ultraviolet detection imaging technique disclosure satisfy that space exploration, fire alarm, horizon communication, environment
The fields such as pollution monitoring are advantageous to the accurate judgement to observed object to the demand of multispectral sensing.At present, grind extensively in the world
The ultraviolet imagery detector studied carefully mainly includes light transmitting vacuum type and the major class of solid-state version two, and light transmitting vacuum device mainly includes purple
Ultraviolet image converter tube of outer photomultiplier, vacuum diode, imaging-type etc..Solid-state version device is broadly divided into two classes：First, use nitrogen
Change the ultraviolet detector that the semiconductor material with wide forbidden band such as gallium, carborundum, zinc oxide make, second, being made on silicon substrate image device
Ultraviolet detector, the technology path specifically used mainly have the back of the body thinning technique and ultraviolet-visible light conversion membrane technology.It is existing
These ultraviolet imagery detectors can only measure ultraviolet light intensity and spectral information.
Polarization is the key character of electromagnetic wave, is another important attribute of the light in addition to wavelength, amplitude, phase.Spectrum is inclined
The polarization information of relevant target reflection or radiant light can be provided by shaking, and be a kind of more rich information source.Traditional light intensity and spectrographic detection
Technology is only capable of detecting light intensity and spatial information, Polarization Detection can obtain light intensity, spectrum, space, degree of polarization, polarization azimuth,
The information such as ellipticity and direction of rotation is polarized, effectively utilizes polarization vector information, picture contrast can be strengthened, improves signal to noise ratio,
So as to greatly improve detection accuracy, improve image quality, improve to the recognition capability of target.At present, both at home and abroad to polarizing
The research of picture detection concentrates on infrared band and visible light wave range substantially, for example, AUS research laboratory, air force in 2010
Research laboratory and University of Arizona cooperate has carried out infrared polarization imaging research to unlike material target；2009,
Israel researcher has carried out polarization imaging experiment under haze weather environment, and experiment shows that visible ray polarization imaging can improve
Imaging effect, improve the operating distance of imaging.Research both at home and abroad to ultraviolet band Polarization Detection imaging technique is very deficient.It is red
The implementation of the polarization imaging of wave section and visible light wave range detection mainly by optics link, was both polarized using metal wire grid
The polarization optical element such as piece and wave plate, prism, glass stack, LCD space light modulator and detector and different light path layouts
Structure component amplitude polarization, timesharing polarization, divide the Polarization Detection systems such as aperture polarization.It is ultraviolet compared with visible ray and infrared band
Requirement of the polarization optical element and micro-nano structure of wave band to machining accuracy is higher, at present, is limited by micro-nano technology technology, purple
The polarization optical element and micro-nano structure of wave section extremely lack, and there is no the report of ultraviolet polarization imaging detector both at home and abroad.
Spectrum switch technology is a general light-light switch technology in optoelectronic areas, CCD surfaces coating it is ultraviolet-can
See the ultraviolet detection imaging technique of light conversion film by the way that UV signal is converted into the visible ray or near-infrared that CCD can respond
Light, realize ultraviolet detection.The main organic fluorescence materials of ultraviolet-visible light conversion material, rare earth luminescent material and quanta point material
Deng.Foreign study person was carried out to silicon substrate CCD ultraviolet enhancers part of the organic fluorescence materials as ultraviolet-visible light-converting material
System research, the results showed that the material such as Lumogen, coronene can all realize the ultraviolet enhancing of CCD device, and Photometrics
Corresponding product is proposed Deng company, and is applied to Harper telescope.The personnel such as the Franks of University of Waterloo (CA) Waterloo, Ontario, N2L3GI Canada in 2003 will
(La,Ce,Tb)PO4:Ce:Tb particles are deposited on the imaging detector that ultraviolet response is realized on quartz substrate.
However, organic dyestuff and rare earth luminescent material are difficult to polarize, the imaging detection of ultraviolet polarization can not be realized.With
Traditional organic fluorescent dye is compared with inorganic rare earth luminescent material, and there is quanta point material solwution method to prepare, easily disperse, light
The outstanding features such as adjustable, luminous efficiency is high are composed, are the ultraviolet-visible light-converting materials of a kind of great application potential.Patent application
201610962449.5 detect quantum dot ultraviolet-visible light conversion film for ultraviolet imagery, and the detector has response ripple
The advantages that section is controllable, face battle array is big, cost is low, image definition is high.However, quantum dot light emitting film enhancing ultraviolet imagery is visited
Device is surveyed to ultraviolet polarised light without response, ultraviolet polarization imaging detection can not be realized.Quantum dot easily realizes prepared by anisotropy, respectively
The quanta point material (nanometer rods, nano wire, nanobelt, nanometer sheet etc.) of anisotropy, except the optical characteristics for possessing common quantum dot
In addition, the fluorescent emission also with anisotropic properties, particularly polarization absorption and high-polarization.Existing spectral investigation table
Bright, the degree of polarization of individual particle anisotropy quantum dot fluorescence transmitting can reach 0.9, be preferable polarized luminescent material.
The content of the invention
As described above, the research both at home and abroad to polarization imaging detection concentrates on infrared band and visible light wave substantially at present
Section, its implementation is mainly in optics link, due to being limited by micro-nano technology technology, the polarization optical element of ultraviolet band and
Micro-nano structure extremely lacks, and there is no the report of ultraviolet polarization imaging detector both at home and abroad.Existing ultraviolet detector is only capable of detecting
Ultraviolet light intensity and spectral information.
Therefore, the invention provides a kind of ultraviolet polarization imaging detector, its based on including quanta point material it is ultraviolet-can
See light conversion film, ultraviolet light intensity, spectrum, degree of polarization, polarization azimuth, the polarization information such as ellipticity and direction of rotation can be obtained,
By effectively utilizing ultraviolet polarization vector information, picture contrast can be strengthened, signal to noise ratio is improved, so as to greatly improve ultraviolet spy
Precision is surveyed, improves ultraviolet imagery quality, improve recognition capability to target.
According to an aspect of the present invention, a kind of polarization imaging detector, for realizing ultraviolet polarization imaging detection, including：
Ultraviolet-visible light conversion film, for optionally absorbing the ultraviolet light of particular polarization and being converted into
The visible ray of identical polarization direction；
Micronano optical structure, for optionally transmiting the visible ray of the identical polarization direction；And
Image device, for detecting the visible ray of the identical polarization direction via micronano optical structure transmission.
In embodiment, the ultraviolet-visible light conversion film include with polarization selection characteristic quanta point material or
The composite of quanta point material and polymer.
In embodiment, the quanta point material with polarization selection characteristic includes the calcium titanium with polarization selection characteristic
Ore deposit class quanta point material, cadmium selenide class quanta point material.Preferably, the perovskite quanta point material, cadmium selenide class quantum
Anisotropic nanometer rods, nano wire, nanobelt or nanometer sheet etc. can be made in point material.
Preferably, the ultraviolet-visible light conversion film is quanta point material and polymer shape with polarization selection characteristic
Into composite Quantum dot polarization optical film, or pass through the technologies such as stretching, the Electrospun Quantum dot polarization prepared in situ
Optical film.
In embodiment, the quanta point material with polarization selection characteristic or quanta point material and polymer are answered
Condensation material arranges in the same direction in the ultraviolet-visible light conversion film, the polarization absorption of the ultraviolet-visible light conversion film
It is homogeneous direction with polarizing emission direction.
In embodiment, the ultraviolet-visible light conversion film is circle, by being rotated around its central point, can be obtained not
With the incident intensity of polarization direction ultraviolet light.
In embodiment, the ultraviolet-visible light conversion film includes multiple optics film modules in different polarization direction, is used for
The polarized component of the different directions of incident uv is measured simultaneously.
In embodiment, the micronano optical structure includes sub-wavelength grate structure or photon crystal structure, its with it is described
Ultraviolet-visible light conversion film is coupled to form the polarization optics matrix with pixel level gridding structure.Preferably, the micro-nano
Optical texture matches to the polarizing emission direction of the polarization response and the ultraviolet-visible light conversion film of visible ray.
In embodiment, the image device is silicon substrate face battle array device, including charge coupled cell CCD, electron multiplication electricity
Lotus coupling element EMCCD or cmos imaging device, it is coupled with polarization optics matrix progress pixel level and Spectral matching.It is excellent
Selection of land, the pixel level gridding structure of the polarization optics matrix and the pixel level gridding structure phase of the image device
Match somebody with somebody, the ultraviolet-visible light conversion film is excited launched visible ray only to incide picture corresponding to this grid by ultraviolet radioactive
In member.
In embodiment, the surface of the image device is provided with for the anti-reflection ultraviolet-visible light conversion film peak value
Emission wavelength, the optical film for ending other radiation.
In embodiment, the surface of the ultraviolet-visible light conversion film is provided with for anti-reflection ultraviolet light, cut-off visible ray
With another micronano optical structure of infrared light.
Preferably, EMCCD or cmos device have million magnitudes or ten million magnitude pixel scale, and ultraviolet-visible light turns
The size for changing film is square centimeter magnitude, now the ultraviolet polarization detector based on Quantum dot polarization luminescent film be million magnitudes with
And ten million magnitude pixel scale detector.
Preferably, the parameters such as the component of quantum point material, pattern, the light conversion film transmitting of regulation and control ultraviolet-visible are passed through
The spectral region of light.
Preferably, ultraviolet polarization detector is encapsulated in the shell of Darkening process, and shell absorbs the reflection of micronano optical structure
Ultraviolet light, visible ray and near-infrared radiation.
Polarization imaging detector proposed by the present invention based on the ultraviolet-visible light conversion film including quanta point material except
Can greatly improve detection accuracy, improve image quality, improve to the recognition capability of target outside, also with difficulty of processing it is low, into
Sheet is low, it is integrated to be easily achieved device, easily prepares the advantages that large area array.
Other advantages, target and the feature of the present invention will be illustrated in the following description to a certain extent, and
And to a certain extent, based on will be apparent to those skilled in the art to investigating hereafter, Huo Zheke
To be instructed from the practice of the present invention.The target and other advantages of the present invention can be wanted by following specification, right
Specifically noted structure is sought in book, and accompanying drawing to realize and obtain.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
Apply example to be provided commonly for explaining the present invention, be not construed as limiting the invention.In the accompanying drawings：
Fig. 1 shows the schematic perspective view of polarization imaging detector according to embodiments of the present invention.
Fig. 2 shows the sectional structure chart of polarization imaging detector according to embodiments of the present invention.
Fig. 3 shows the fundamental diagram of polarization imaging detector according to embodiments of the present invention.
Fig. 4 shows the ultraviolet-visible light conversion film of the quanta point material including homogeneous arrangement according to embodiments of the present invention.
Fig. 5 shows that the ultraviolet-visible light of the optics film module including different polarization direction according to embodiments of the present invention turns
Change film.
Fig. 6 shows the image device for including anti-reflection visible light optical film according to embodiments of the present invention.
Fig. 7 shows the ultraviolet-visible light conversion film for including another micronano optical structure according to embodiments of the present invention.
Embodiment
Embodiments of the present invention are described in detail below with reference to drawings and Examples, and how the present invention is applied whereby
Technological means solves technical problem, and the implementation process for reaching technique effect can fully understand and implement according to this.Need to illustrate
As long as not forming conflict, each embodiment in the present invention and each feature in each embodiment can be combined with each other,
The technical scheme formed is within protection scope of the present invention.
Fig. 1 shows the schematic perspective view of polarization imaging detector according to embodiments of the present invention, and Fig. 2 is shown according to this
The sectional structure chart of the polarization imaging detector of inventive embodiments.As illustrated in fig. 1 and 2, polarization imaging detector bag of the invention
Include：
Ultraviolet-visible light conversion film 101, for optionally absorbing the ultraviolet light of particular polarization and being converted
For the visible ray of identical polarization direction；
Micronano optical structure 102, for optionally transmiting the visible ray of the identical polarization direction；And
Image device 103, for detecting the visible ray of the identical polarization direction transmitted via micronano optical structure 102.
Specifically, ultraviolet-visible light conversion film includes quanta point material or quantum dot material with polarization selection characteristic
The composite 106 of material and polymer, is used for：1) ultraviolet light in different polarization direction is optionally absorbed, i.e., to ultraviolet polarization
There is light strong response to act on；And 2) ultraviolet polarized light signal is converted to the visible ray polarization signal in system polarization direction, with
Convenient detection.
In embodiment, the quanta point material with polarization selection characteristic includes the perovskite with polarization selection characteristic
Quanta point material, cadmium selenide class quanta point material etc., they can be formed with anisotropic nanometer rods, nano wire, nanometer
Band or nanometer sheet etc..In practice, can by the technologies such as stretching, Electrospun it is in situ prepare include quanta point material it is ultraviolet-
It can be seen that light conversion film, but the invention is not restricted to this, any suitable technology is used equally for preparing the purple for including quanta point material
Outside-visible light conversion film, as long as can realize that the ultraviolet deflection to visible ray is changed.
In a preferred embodiment, can by parameters such as the component of quantum point material, patterns, come regulate and control it is ultraviolet-can
See the spectral region of light conversion film transmitted light.
In embodiment, micronano optical structure 102 is used to select the polarization of visible ray, specifically, for selectivity
Ground excites caused polarization visible light signal after ultraviolet-visible light conversion film through ultraviolet polarization signal, filters out unpolarized ultraviolet
The unpolarized visible light signal and ultraviolet polarization signal that signal excitation ultraviolet-visible light conversion film is sent excite it is ultraviolet-can
See the unpolarized visible light signal that light conversion film is sent.That is, micronano optical structure 102 is to the polarization response and purple of visible ray
The polarizing emission direction of outside-visible light conversion film 101 matches.
Micronano optical structure 102 includes sub-wavelength grate structure or photon crystal structure, itself and ultraviolet-visible light conversion film
101 couple to form the polarization optics matrix 104 with pixel level gridding structure.
In embodiment, image device 103 is silicon substrate face battle array device, including charge coupled cell CCD, electron multiplying charge
Coupling element EMCCD or cmos imaging device, it is coupled with the progress of polarization optics matrix 104 pixel level and Spectral matching.It is preferred that
Ground, the pixel level gridding structure of polarization optics matrix 104 and pixel level gridding structure (that is, the pixel level of image device 103
Photosensitive member 105) match so that ultraviolet-visible light conversion film 101 is excited launched visible ray only to incide by ultraviolet radioactive
Corresponding to this grid on pixel.
Preferably, EMCCD or cmos device have million magnitudes or ten million magnitude pixel scale, and ultraviolet-visible light turns
The size for changing film is square centimeter magnitude, now the ultraviolet polarization detector based on Quantum dot polarization luminescent film be million magnitudes with
And ten million magnitude pixel scale detector.
Illustrate the operation principle of polarization imaging detector according to embodiments of the present invention referring to Fig. 3.As shown in figure 3,
Natural background light and ultraviolet signal with identification target information form incident light beam strikes to ultraviolet-visible light conversion film 301
On, the ultraviolet light that target is sent has stronger polarization characteristic, and the degree of polarization of natural background light is smaller.The purple that target is sent
Outer optical signal includes the vertical component of parallel component and non-characteristic information with target signature information, by ultraviolet-visible light
After changing film 301, ultraviolet signal vertical component is converted to visible vertical light component, and the ultraviolet light with target signature information is put down
Row component is converted to visible ray parallel component.In transfer process, pass through the polarization selectivity of ultraviolet-visible light conversion film 301
Absorption and transmission, ultraviolet polarised light is converted into visible polarized light, quantum efficiency is not less than 50%, it is seen that the polarization side of polarised light
To corresponding relation consistent with the polarization direction of UV signal or with fixation.Because ultraviolet-visible light conversion film 301 can not be real
Existing 100% conversion, can carry a small amount of vertical component.
Visible polarized light by conversion incides micronano optical structure 302, and polarization micronano optical structure filters out visible ray
Vertical component, and transmit the visible ray parallel component with target information.The visible ray parallel component signal of transmission directly enters
It is mapped on the photosensitive area of image device 303, photosensitive area surface is pixel level gridding structure, the He of ultraviolet-visible light conversion film 301
Micronano optical structure 302 also matches for pixel level gridding structure and with the pixel level gridding structure of image device 303, often
The visible ray that ultraviolet-visible light conversion film 301 in individual grid is launched can only be incided corresponding to this grid on pixel.
Visible ray parallel component signal is converted into electric charge after being absorbed by image device 303, when image device 303 is EMCCD
When, electric charge carries out 1~1000 times of amplification in EMCCD；When image device 303 is CMOS, electric charge low noise in CMOS
Read.That is, it is seen that parallel light component incides to be imaged on image device 303, is compared by image, is analyzed with reference to big data,
Realize target detection and identification.
Illustrate the structure of ultraviolet-visible light conversion film according to embodiments of the present invention with reference to Figure 4 and 5 further below.Fig. 4
The ultraviolet-visible light conversion film for including the quanta point material of homogeneous arrangement is shown.Fig. 5 shows according to embodiments of the present invention include
The ultraviolet-visible light conversion film of the optics film module in different polarization direction.
As shown in figure 4, quanta point material or the composite wood of quanta point material and polymer with polarization selection characteristic
Material arranges in the same direction in ultraviolet-visible light conversion film 401, the polarization absorption and polarization of ultraviolet-visible light conversion film 401
The direction of the launch is homogeneous direction.
In embodiment, ultraviolet-visible light conversion film 401 is circle, by being rotated around its central point, can obtain difference
The incident intensity of polarization direction ultraviolet light.
As shown in figure 5, in embodiment, ultraviolet-visible light conversion film includes multiple optical film moulds in different polarization direction
Block 501, the polarized component of the different directions for measuring incident uv simultaneously.
Fig. 6 shows the image device for including anti-reflection visible light optical film according to embodiments of the present invention.As shown in fig. 6, into
As the surface of device 601 includes multiple pixel level light-sensitive elements 602, the optical film 603 of pixel is provided with, for anti-reflection
The visible ray of ultraviolet-visible light conversion film peak emission wavelength and the optical signal for ending other radiation.
Fig. 7 shows the ultraviolet-visible light conversion film for including another micronano optical structure according to embodiments of the present invention.
As shown in fig. 7, in embodiment, ultraviolet-visible light conversion film 701 includes the quanta point material 702 of homogeneous arrangement,
Another micronano optical structure 703 is provided with the surface of ultraviolet-visible light conversion film 701, it is visible for anti-reflection ultraviolet light, cut-off
Light and infrared light.
In summary, the invention provides a kind of polarization imaging detector, its based on including quanta point material it is ultraviolet-can
See light conversion film, ultraviolet light intensity, spectrum, degree of polarization, polarization azimuth, the polarization information such as ellipticity and direction of rotation can be obtained,
By effectively utilizing ultraviolet polarization vector information, picture contrast can be strengthened, signal to noise ratio is improved, so as to greatly improve ultraviolet spy
Precision is surveyed, improves ultraviolet imagery quality, improve recognition capability to target, and also has that difficulty of processing is low, cost is low, is easy to
Realize that device is integrated, easily prepares the advantages that large area array.
Although disclosed herein embodiment as above, described content only to facilitate understand the present invention and adopt
Embodiment, it is not limited to the present invention.Any those skilled in the art to which this invention pertains, this is not being departed from
On the premise of the disclosed spirit and scope of invention, any modification and change can be made in the implementing form and in details,
But the scope of patent protection of the present invention, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of polarization imaging detector, for realizing ultraviolet polarization imaging detection, including：
Ultraviolet-visible light conversion film, for optionally absorbing the ultraviolet light of particular polarization and being converted into identical
The visible ray of polarization direction；
Micronano optical structure, for optionally transmiting the visible ray of the identical polarization direction；And
Image device, for detecting the visible ray of the identical polarization direction via micronano optical structure transmission.
2. polarization imaging detector according to claim 1, wherein, the ultraviolet-visible light conversion film includes having partially
The quanta point material or the composite of quanta point material and polymer for selection characteristic of shaking.
3. polarization imaging detector according to claim 2, wherein, the quanta point material with polarization selection characteristic
Including perovskite quanta point material, cadmium selenide class quanta point material with polarization selection characteristic.
4. the polarization imaging detector according to Claims 2 or 3, wherein, the quantum dot with polarization selection characteristic
The composite of material or quanta point material and polymer arranges in the same direction in the ultraviolet-visible light conversion film,
The polarization absorption of the ultraviolet-visible light conversion film and polarizing emission direction are homogeneous direction.
5. polarization imaging detector according to claim 4, wherein, the ultraviolet-visible light conversion film is circle, is passed through
Rotated around its central point, the incident intensity of different polarization direction ultraviolet light can be obtained.
6. polarization imaging detector according to claim 4, wherein, the ultraviolet-visible light conversion film includes different inclined
Shake multiple optics film modules in direction, the polarized component of the different directions for measuring incident uv simultaneously.
7. the polarization imaging detector according to claim 5 or 6, wherein, the micronano optical structure includes sub-wavelength light
Grid structure or photon crystal structure, it is coupled with the ultraviolet-visible light conversion film to be formed with pixel level gridding structure
Polarization optics matrix.
8. polarization imaging detector according to claim 7, wherein, the image device include charge coupled cell CCD,
Electron multiplying charge coupling element EMCCD or cmos imaging device, its carry out with the polarization optics matrix pixel level couple and
Spectral matching.
9. polarization imaging detector according to claim 8, wherein, the surface of the image device is provided with for anti-reflection
The ultraviolet-visible light conversion film peak emission wavelength, the optical film for ending other radiation.
10. the polarization imaging detector according to claim 7 or 9, wherein, the surface of the ultraviolet-visible light conversion film
It is provided with another micronano optical structure for anti-reflection ultraviolet light, cut-off visible ray and infrared light.
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| CN113270516A (en) * | 2021-05-07 | 2021-08-17 | 南京理工大学 | Based on CrPbBr3Ultraviolet polarization enhanced detection method for fluorescence conversion of nanowire film |
| CN113937171A (en) * | 2021-11-23 | 2022-01-14 | 长春理工大学 | Ultraviolet polarization spectrum detector based on metal wire grid composite film |
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