CN107863394B - A kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film - Google Patents
A kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film Download PDFInfo
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- CN107863394B CN107863394B CN201710971386.4A CN201710971386A CN107863394B CN 107863394 B CN107863394 B CN 107863394B CN 201710971386 A CN201710971386 A CN 201710971386A CN 107863394 B CN107863394 B CN 107863394B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- 238000002161 passivation Methods 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 147
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 80
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 72
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 55
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910000077 silane Inorganic materials 0.000 claims abstract description 53
- 239000001257 hydrogen Substances 0.000 claims abstract description 52
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 52
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 32
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 27
- 239000012495 reaction gas Substances 0.000 claims abstract description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 19
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 28
- 230000002708 enhancing effect Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 5
- 238000005984 hydrogenation reaction Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 230000004048 modification Effects 0.000 abstract description 3
- 238000012986 modification Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 210000004027 cell Anatomy 0.000 description 16
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of preparation methods of monocrystaline silicon solar cell reduced passivation resisting film, method includes the following steps: cleaning monocrystalline silicon piece；Using methane and ammonia as reaction gas, using plasma enhances chemical vapour deposition technique and deposits one layer of hydrogenated silicon nitride C film in monocrystalline silicon surface；Using the silane of diluted in hydrogen and ammonia as reaction gas, using plasma enhances chemical vapour deposition technique and deposits one layer of hydrogenated silicon nitride silicon thin film in hydrogenated silicon nitride carbon film surface；Using the silane of diluted in hydrogen, high-purity methane and high-purity ammonia as reaction gas, using plasma enhances chemical vapour deposition technique and prepares one layer of hydrogeneous carbon silicon nitride film in hydrogenated silicon nitride silicon film surface.This method is by each element atomic concentration when each layer film thickness in modification monocrystalline silicon surface chemical bond, adjustment trilamellar membrane, to improve thin film passivation effect and antireflection characteristic.
Description
Technical field
The present invention relates to monocrystaline silicon solar cell preparation technical fields, and in particular to a kind of monocrystaline silicon solar cell subtracts
The preparation method of anti-passivating film.
Background technique
Solar energy power generating can not only reduce biography as a kind of inexhaustible, nexhaustible renewable and clean energy resource
The usage amount of system fossil energy can also reduce environmental pollution.In addition, solar energy power generating can solve remote mountain areas and routine
The power shortage problem in the inconvenient place of power grid conveying.These advantages of solar energy power generating have become utilization of new energy resources and have ground
Study carefully a hot issue in field.Currently, it is still traditional crystal silicon solar batteries that market application is at most most wide, they
It is a kind of solar battery that current technology is the most mature, performance is the most stable.There is one of weight in crystal silicon battery manufacturing process
Want process be exactly be that crystal silicon battery prepares passivated reflection reducing membrane, passivated reflection reducing membrane can not only reduce photo-generated carrier in cell interface
It is compound, can also reduce incident sunlight battery surface reflection increase sun light absorption, thus improve crystal silicon battery photoelectricity
Transfer efficiency.Monocrystaline silicon solar cell reduced passivation resisting film prepared by the present invention passes through modification monocrystalline silicon surface chemical bond, tune
Each element atomic concentration when each layer film thickness in whole trilamellar membrane, to improve thin film passivation effect and antireflection characteristic.By this
Not only the number of plies is few, simple process is stable, high yield rate for monocrystaline silicon solar cell reduced passivation resisting film prepared by method, can be effective
The manufacturing cost of monocrystaline silicon solar cell reduced passivation resisting film is reduced, and the reduced passivation resisting film properties are stable, anti-oxidant acidproof
Alkali, insulation performance be good, good passivation effect, in visible light wave range transmissison characteristic with higher.In addition, the film also have it is higher hard
Degree, the wear-resistant characteristics such as not easily to fall off, play a part of hard protective layer and rub resistance to battery.
Summary of the invention
It is an object of the invention to provide a kind of reduced passivation resisting film and preparation method thereof for monocrystalline silicon battery.This method passes through
Plasma enhanced chemical vapor deposition technology deposits a kind of reduced passivation resisting film on monocrystaline silicon solar cell surface, by this method
Not only performance is stable for prepared monocrystaline silicon solar cell reduced passivation resisting film, good passivation effect, but also has in visible light wave range
There is higher transmissison characteristic.Meanwhile film hardness also with higher, the work of hard protective layer and rub resistance is also played to battery
With.
A kind of monocrystaline silicon solar cell reduced passivation resisting membrane preparation method provided by the invention, comprising the following steps:
(1) monocrystalline silicon piece is cleaned；
(2) high-purity methane (purity 99.999%) and high-purity ammonia (purity 99.9995%) they are reaction gas, using etc.
Gas ions enhance chemical vapour deposition technique and deposit one layer of hydrogenated silicon nitride C film in monocrystalline silicon surface.It is thin to prepare hydrogenated silicon nitride carbon
The technological parameter of film is: 300~400W of radio-frequency power, rf frequency 13.56MHz, 250~350 DEG C of substrate temperature, chamber pressure
60~110Pa, 50~80sccm of high-purity methane gas flow, 30~50sccm of high-purity ammonia gas flow, plated film time 30~
60 seconds, film thickness was 20~50 nanometers；
Further preferably, the technological parameter for preparing hydrogenated silicon nitride C film is: radio-frequency power 300W, rf frequency
13.56MHz, 300 DEG C of substrate temperature, chamber pressure 60Pa, high-purity methane gas flow 50sccm, high-purity ammonia gas flow
30sccm, plated film time 30 seconds, film thickness was 20 nanometers；
(3) with the silane of diluted in hydrogen and high-purity ammonia (purity 99.9995%) for reaction gas, using plasma
It is thin to enhance chemical vapour deposition technique hydrogenated silicon nitride carbon film surface one layer of hydrogenated silicon nitride of deposition prepared in step (2)
Film.The technological parameter for preparing hydrogenated silicon nitride silicon thin film is: 350~450W of radio-frequency power, rf frequency 13.56MHz, substrate temperature
250~350 DEG C, 100~160Pa of chamber pressure, with silane (volume ratio: hydrogen 90%, silane 10%) gas stream of diluted in hydrogen
Measure 90~130sccm, 100~150sccm of high-purity ammonia gas flow, plated film time 200~300 seconds, film thickness be 180~
310 nanometers；
Further preferably, the technological parameter for preparing hydrogenated silicon nitride silicon thin film is: radio-frequency power 400W, rf frequency
13.56MHz, 300 DEG C of substrate temperature, chamber pressure 150Pa, with the silane (volume ratio: hydrogen 90%, silane 10%) of diluted in hydrogen
Gas flow 110sccm, high-purity ammonia gas flow 120sccm, plated film time 250 seconds, film thickness was 210 nanometers；
(4) using the silane of diluted in hydrogen, high-purity methane and high-purity ammonia as reaction gas, using plasma enhancing chemistry
The hydrogenated silicon nitride silicon film surface of gas phase deposition technology in step (3) prepares one layer of hydrogeneous carbon silicon nitride film.Hydrogeneous
The technological parameter of carbon silicon nitride film is: 250~350W of radio-frequency power, rf frequency 13.56MHz, substrate temperature 250~350
DEG C, 120~180Pa of chamber pressure, with silane (volume ratio: hydrogen 90%, silane 10%) gas flow 90 of diluted in hydrogen~
130sccm, 60~90sccm of high-purity ammonia gas flow, high-purity methane 80~120sccm of gas flow, plated film time 180~
230 seconds, film thickness was 150~260 nanometers.
Further preferably, the technological parameter of hydrogeneous carbon silicon nitride film is: radio-frequency power 300W, rf frequency
13.56MHz, 300 DEG C of substrate temperature, chamber pressure 130Pa, with the silane (volume ratio: hydrogen 90%, silane 10%) of diluted in hydrogen
Gas flow 100sccm, high-purity ammonia gas flow 60sccm, high-purity methane gas flow 90sccm, plated film time 200 seconds,
Film thickness is 190 nanometers.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.In figure: 1 is monocrystalline substrate；2 be hydrogenated silicon nitride C film；3 be hydrogenation
Silicon nitride film；4 be hydrogeneous carbon silicon nitride film.
Film prepared by Fig. 2 embodiment 1 is in 300-900 nano waveband incident light transmittance curve figure.
Specific embodiment
Provided a kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film for the present invention is further explained, with
Lower case study on implementation is not used in the limitation present invention to illustrate the present invention.
Embodiment 1:
A kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film, this method include the next steps:
(1) monocrystalline silicon piece is cleaned；
(2) it is used with high-purity methane (purity 99.999%) and high-purity ammonia (purity 99.9995%) for reaction gas
Plasma enhanced chemical vapor deposition technology deposits one layer of hydrogenated silicon nitride C film in monocrystalline silicon surface.Prepare hydrogenated silicon nitride carbon
The technological parameter of film is: radio-frequency power 300W, rf frequency 13.56MHz, 300 DEG C of substrate temperature, chamber pressure 60Pa, high
Pure methane gas flow 50sccm, high-purity ammonia gas flow 30sccm, plated film time 30 seconds, film thickness was 20 nanometers；
(3) with the silane of diluted in hydrogen and high-purity ammonia (purity 99.9995%) for reaction gas, using plasma
It is thin to enhance chemical vapour deposition technique hydrogenated silicon nitride carbon film surface one layer of hydrogenated silicon nitride of deposition prepared in step (2)
Film.The technological parameter for preparing hydrogenated silicon nitride silicon thin film is: radio-frequency power 400W, rf frequency 13.56MHz, substrate temperature 300
DEG C, chamber pressure 150Pa is high-purity with silane (volume ratio: hydrogen 90%, silane 10%) the gas flow 110sccm of diluted in hydrogen
Ammonia gas flow 120sccm, plated film time 250 seconds, film thickness was 210 nanometers；
(4) using the silane of diluted in hydrogen, high-purity methane and high-purity ammonia as reaction gas, using plasma enhancing chemistry
The hydrogenated silicon nitride silicon film surface of gas phase deposition technology in step (3) prepares one layer of hydrogeneous carbon silicon nitride film.Hydrogeneous
The technological parameter of carbon silicon nitride film is: radio-frequency power 300W, rf frequency 13.56MHz, 300 DEG C of substrate temperature, chamber pressure
130Pa, with silane (volume ratio: hydrogen 90%, silane 10%) gas flow 100sccm of diluted in hydrogen, high-purity ammonia gas stream
60sccm, high-purity methane gas flow 90sccm are measured, plated film time 200 seconds, film thickness was 190 nanometers.
Fig. 2 is the film obtained of embodiment 1 in 300-900 nano waveband transmittance graph, can be found from figure
Optical band especially its transmissivity of 550-700 nano waveband is higher than 90%.
Embodiment 2:
A kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film, this method include the next steps:
(1) monocrystalline silicon piece is cleaned；
(2) it is used with high-purity methane (purity 99.999%) and high-purity ammonia (purity 99.9995%) for reaction gas
Plasma enhanced chemical vapor deposition technology deposits one layer of hydrogenated silicon nitride C film in monocrystalline silicon surface.Prepare hydrogenated silicon nitride carbon
The technological parameter of film is: radio-frequency power 350W, rf frequency 13.56MHz, 250 DEG C of substrate temperature, chamber pressure 80Pa, high
Pure methane gas flow 70sccm, high-purity ammonia gas flow 40sccm, plated film time 40 seconds, film thickness was 31 nanometers；
(3) with the silane of diluted in hydrogen and high-purity ammonia (purity 99.9995%) for reaction gas, using plasma
It is thin to enhance chemical vapour deposition technique hydrogenated silicon nitride carbon film surface one layer of hydrogenated silicon nitride of deposition prepared in step (2)
Film.The technological parameter for preparing hydrogenated silicon nitride silicon thin film is: radio-frequency power 350W, rf frequency 13.56MHz, substrate temperature 250
DEG C, chamber pressure 100Pa is high-purity with silane (volume ratio: hydrogen 90%, silane 10%) the gas flow 90sccm of diluted in hydrogen
Ammonia gas flow 100sccm, plated film time 200 seconds, film thickness was 180 nanometers；
(4) using the silane of diluted in hydrogen, high-purity methane and high-purity ammonia as reaction gas, using plasma enhancing chemistry
The hydrogenated silicon nitride silicon film surface of gas phase deposition technology in step (3) prepares one layer of hydrogeneous carbon silicon nitride film.Hydrogeneous
The technological parameter of carbon silicon nitride film is: radio-frequency power 250W, rf frequency 13.56MHz, 250 DEG C of substrate temperature, chamber pressure
120Pa, with silane (volume ratio: hydrogen 90%, silane 10%) gas flow 120sccm of diluted in hydrogen, high-purity ammonia gas stream
80sccm, high-purity methane gas flow 120sccm are measured, plated film time 180 seconds, film thickness was 150 nanometers.
Embodiment 3:
A kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film, this method include the next steps:
(1) monocrystalline silicon piece is cleaned；
(2) it is used with high-purity methane (purity 99.999%) and high-purity ammonia (purity 99.9995%) for reaction gas
Plasma enhanced chemical vapor deposition technology deposits one layer of hydrogenated silicon nitride C film in monocrystalline silicon surface.Prepare hydrogenated silicon nitride carbon
The technological parameter of film is: radio-frequency power 400W, rf frequency 13.56MHz, 350 DEG C of substrate temperature, chamber pressure 100Pa, high
Pure methane gas flow 80sccm, high-purity ammonia gas flow 50sccm, plated film time 50 seconds, film thickness was 39 nanometers；
(3) with the silane of diluted in hydrogen and high-purity ammonia (purity 99.9995%) for reaction gas, using plasma
It is thin to enhance chemical vapour deposition technique hydrogenated silicon nitride carbon film surface one layer of hydrogenated silicon nitride of deposition prepared in step (2)
Film.The technological parameter for preparing hydrogenated silicon nitride silicon thin film is: radio-frequency power 450W, rf frequency 13.56MHz, substrate temperature 350
DEG C, chamber pressure 140Pa is high-purity with silane (volume ratio: hydrogen 90%, silane 10%) the gas flow 130sccm of diluted in hydrogen
Ammonia gas flow 140sccm, plated film time 300 seconds, film thickness was 310 nanometers；
(4) using the silane of diluted in hydrogen, high-purity methane and high-purity ammonia as reaction gas, using plasma enhancing chemistry
The hydrogenated silicon nitride silicon film surface of gas phase deposition technology in step (3) prepares one layer of hydrogeneous carbon silicon nitride film.Hydrogeneous
The technological parameter of carbon silicon nitride film is: radio-frequency power 350W, rf frequency 13.56MHz, 350 DEG C of substrate temperature, chamber pressure
150Pa, with silane (volume ratio: hydrogen 90%, silane 10%) gas flow 90sccm of diluted in hydrogen, high-purity ammonia gas flow
90sccm, high-purity methane gas flow 80sccm, plated film time 230 seconds, film thickness was 260 nanometers.
Embodiment 4:
A kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film, this method include the next steps:
(1) monocrystalline silicon piece is cleaned；
(2) it is used with high-purity methane (purity 99.999%) and high-purity ammonia (purity 99.9995%) for reaction gas
Plasma enhanced chemical vapor deposition technology deposits one layer of hydrogenated silicon nitride C film in monocrystalline silicon surface.Prepare hydrogenated silicon nitride carbon
The technological parameter of film is: radio-frequency power 330W, rf frequency 13.56MHz, 280 DEG C of substrate temperature, chamber pressure 110Pa, high
Pure methane gas flow 60sccm, high-purity ammonia gas flow 45sccm, plated film time 60 seconds, film thickness was 50 nanometers；
(3) with the silane of diluted in hydrogen and high-purity ammonia (purity 99.9995%) for reaction gas, using plasma
It is thin to enhance chemical vapour deposition technique hydrogenated silicon nitride carbon film surface one layer of hydrogenated silicon nitride of deposition prepared in step (2)
Film.The technological parameter for preparing hydrogenated silicon nitride silicon thin film is: radio-frequency power 380W, rf frequency 13.56MHz, substrate temperature 280
DEG C, chamber pressure 160Pa is high-purity with silane (volume ratio: hydrogen 90%, silane 10%) the gas flow 100sccm of diluted in hydrogen
Ammonia gas flow 130sccm, plated film time 230 seconds, film thickness was 190 nanometers；
(4) using the silane of diluted in hydrogen, high-purity methane and high-purity ammonia as reaction gas, using plasma enhancing chemistry
The hydrogenated silicon nitride silicon film surface of gas phase deposition technology in step (3) prepares one layer of hydrogeneous carbon silicon nitride film.Hydrogeneous
The technological parameter of carbon silicon nitride film is: radio-frequency power 280W, rf frequency 13.56MHz, 280 DEG C of substrate temperature, chamber pressure
180Pa, with silane (volume ratio: hydrogen 90%, silane 10%) gas flow 130sccm of diluted in hydrogen, high-purity ammonia gas stream
70sccm, high-purity methane gas flow 100sccm are measured, plated film time 210 seconds, film thickness was 225 nanometers.
Embodiment 5:
A kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film, this method include the next steps:
(1) monocrystalline silicon piece is cleaned；
(2) it is used with high-purity methane (purity 99.999%) and high-purity ammonia (purity 99.9995%) for reaction gas
Plasma enhanced chemical vapor deposition technology deposits one layer of hydrogenated silicon nitride C film in monocrystalline silicon surface.Prepare hydrogenated silicon nitride carbon
The technological parameter of film is: radio-frequency power 380W, rf frequency 13.56MHz, 330 DEG C of substrate temperature, chamber pressure 90Pa, high
Pure methane gas flow 55sccm, high-purity ammonia gas flow 35sccm, plated film time 35 seconds, film thickness was 25 nanometers；
(3) with the silane of diluted in hydrogen and high-purity ammonia (purity 99.9995%) for reaction gas, using plasma
It is thin to enhance chemical vapour deposition technique hydrogenated silicon nitride carbon film surface one layer of hydrogenated silicon nitride of deposition prepared in step (2)
Film.The technological parameter for preparing hydrogenated silicon nitride silicon thin film is: radio-frequency power 410W, rf frequency 13.56MHz, substrate temperature 330
DEG C, chamber pressure 120Pa is high-purity with silane (volume ratio: hydrogen 90%, silane 10%) the gas flow 120sccm of diluted in hydrogen
Ammonia gas flow 150sccm, plated film time 270 seconds, film thickness was 290 nanometers；
(4) using the silane of diluted in hydrogen, high-purity methane and high-purity ammonia as reaction gas, using plasma enhancing chemistry
The hydrogenated silicon nitride silicon film surface of gas phase deposition technology in step (3) prepares one layer of hydrogeneous carbon silicon nitride film.Hydrogeneous
The technological parameter of carbon silicon nitride film is: radio-frequency power 330W, rf frequency 13.56MHz, 330 DEG C of substrate temperature, chamber pressure
170Pa, with silane (volume ratio: hydrogen 90%, silane 10%) gas flow 110sccm of diluted in hydrogen, high-purity ammonia gas stream
65sccm, high-purity methane gas flow 110sccm are measured, plated film time 190 seconds, film thickness was 165 nanometers.
The above is present pre-ferred embodiments, but the present invention should not be limited to disclosed in the implementation embodiment
Content.So all do not depart from the lower equivalent or modification completed of spirit disclosed in this invention, both fall within what the present invention protected
Range.
Claims (7)
1. a kind of preparation method of monocrystaline silicon solar cell reduced passivation resisting film, which is characterized in that this method includes the following steps:
(1) monocrystalline silicon piece is cleaned；
(2) high-purity ammonia that the high-purity methane and purity for being 99.999% using purity are 99.9995% is reaction gas, using etc. from
Daughter enhances chemical vapour deposition technique and deposits one layer of hydrogenated silicon nitride C film in monocrystalline silicon surface；
(3) silane for being 10% using diluted in hydrogen volume ratio and be 99.9995% high-purity ammonia as reaction gas using purity, using etc.
Gas ions enhance chemical vapour deposition technique hydrogenated silicon nitride carbon film surface prepared in step (2) and deposit one layer of hydrogenation nitrogen
SiClx film；
(4) high-purity methane and purity that the silane for being 10% with diluted in hydrogen volume ratio, purity are 99.999% are 99.9995%
High-purity ammonia is reaction gas, and it is thin that using plasma enhances the hydrogenated silicon nitride of chemical vapour deposition technique in step (3)
Film surface prepare one layer of hydrogeneous carbon silicon nitride film, wherein hydrogen, silane volume ratio be hydrogen 90%, silane 10%.
2. the preparation method of monocrystaline silicon solar cell reduced passivation resisting film described in claim 1, which is characterized in that step (2)
In, the technological parameter that using plasma enhancing chemical vapour deposition technique prepares hydrogenated silicon nitride C film is: radio-frequency power 300
~400W, rf frequency 13.56MHz, 250~350 DEG C of substrate temperature, 60~110Pa of chamber pressure, high-purity methane gas flow
50~80sccm, 30~50sccm of high-purity ammonia gas flow, plated film time 30~60 seconds, film thickness was 20~50 nanometers.
3. the preparation method of monocrystaline silicon solar cell reduced passivation resisting film described in claim 1, which is characterized in that
In step (2), using high-purity methane and ammonia as reaction gas, using plasma enhances chemical vapour deposition technique in list
Crystal silicon surface deposits one layer of hydrogenated silicon nitride C film, and the technological parameter for preparing hydrogenated silicon nitride C film is: radio-frequency power 300W,
Rf frequency 13.56MHz, 300 DEG C of substrate temperature, chamber pressure 60Pa, high-purity methane gas flow 50sccm, high-purity ammonia gas
Body flow 30sccm, plated film time 30 seconds, film thickness was 20 nanometers.
4. the preparation method of monocrystaline silicon solar cell reduced passivation resisting film described in claim 1, which is characterized in that step (3)
In, the technological parameter that using plasma enhancing chemical vapour deposition technique prepares hydrogenated silicon nitride silicon thin film is: radio-frequency power 350
~450W, rf frequency 13.56MHz, 250~350 DEG C of substrate temperature, 100~160Pa of chamber pressure, with the silicon of diluted in hydrogen
90~130sccm of alkane gas flow, 100~150sccm of high-purity ammonia gas flow, plated film time 200~300 seconds, film was thick
Degree is 180~310 nanometers.
5. the preparation method of monocrystaline silicon solar cell reduced passivation resisting film described in claim 1, which is characterized in that step (3)
In, using the silane of diluted in hydrogen and high-purity ammonia as reaction gas, using plasma enhances chemical vapour deposition technique in step
Suddenly hydrogenated silicon nitride carbon film surface prepared in (2) deposits one layer of hydrogenated silicon nitride silicon thin film, prepares hydrogenated silicon nitride silicon thin film
Technological parameter is: radio-frequency power 400W, rf frequency 13.56MHz, 300 DEG C of substrate temperature, chamber pressure 150Pa, dilute with hydrogen
Silane gas flow 110sccm, the high-purity ammonia gas flow 120sccm released, plated film time 250 seconds, film thickness was received for 210
Rice.
6. the preparation method of monocrystaline silicon solar cell reduced passivation resisting film described in claim 1, which is characterized in that step (4)
In, the technological parameter that using plasma enhancing chemical vapour deposition technique prepares hydrogeneous carbon silicon nitride film is: radio frequency function
250~350W of rate, rf frequency 13.56MHz, 250~350 DEG C of substrate temperature, 120~180Pa of chamber pressure, with diluted in hydrogen
90~130sccm of silane gas flow, 60~90sccm of high-purity ammonia gas flow, high-purity methane gas flow 80~
120sccm, plated film time 180~230 seconds, film thickness was 150~260 nanometers.
7. the preparation method of monocrystaline silicon solar cell reduced passivation resisting film described in claim 1, which is characterized in that step (4)
In, using the silane of diluted in hydrogen, high-purity methane and high-purity ammonia as reaction gas, using plasma enhances chemical vapor deposition
The hydrogenated silicon nitride silicon film surface of technology in step (3) prepares one layer of hydrogeneous carbon silicon nitride film, hydrogeneous carbonitride of silicium
The technological parameter of film is: radio-frequency power 300W, rf frequency 13.56MHz, 300 DEG C of substrate temperature, chamber pressure 130Pa, with
The silane gas flow 100sccm of diluted in hydrogen, the wherein volume ratio of hydrogen, silane are as follows: hydrogen 90%, silane 10%, high-purity ammon
Gas gas flow 60sccm, high-purity methane gas flow 90sccm, plated film time 200 seconds, film thickness was 190 nanometers.
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