CN107863337B - Luminous body packaging structure - Google Patents
Luminous body packaging structure Download PDFInfo
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- CN107863337B CN107863337B CN201711063267.5A CN201711063267A CN107863337B CN 107863337 B CN107863337 B CN 107863337B CN 201711063267 A CN201711063267 A CN 201711063267A CN 107863337 B CN107863337 B CN 107863337B
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- electrode
- substrate
- package structure
- light emitter
- light emitting
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000000084 colloidal system Substances 0.000 claims abstract description 10
- 239000008393 encapsulating agent Substances 0.000 claims description 24
- 238000005520 cutting process Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000000465 moulding Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a luminous body packaging structure which comprises a substrate, a plurality of electrode layers, a plurality of light emitting diode chips and a packaging colloid. The electrode layer is arranged on the substrate. The light emitting diode chips are arranged on the substrate and are respectively connected with the corresponding electrode layers. The packaging colloid covers the substrate, the electrode layer and all the light-emitting diode chips and has a flat colloid surface.
Description
Technical Field
The present invention relates to a light emitting device package structure, and more particularly, to a light emitting device package structure with a molding compound.
Background
Because Light-Emitting diodes (LEDs) have the advantages of long life, small size, low vibration, low heat dissipation, low energy consumption, etc., LEDs have been widely used in devices such as indicator lights or home Light sources. In recent years, with the development of a multi-color gamut and high luminance, light emitting diodes have been applied to various display devices, illumination devices, and the like. The light emitting properties of the device can affect the display performance of the product.
Disclosure of Invention
According to an aspect of the present invention, a light emitter package structure is provided. The light emitting body package structure comprises a substrate, a plurality of electrode layers, a plurality of light emitting diode chips and a package colloid. The electrode layer is arranged on the substrate. The light emitting diode chips are arranged on the substrate and are respectively connected with the corresponding electrode layers. The packaging colloid covers the substrate, the electrode layer and all the light-emitting diode chips and has a flat colloid surface.
In order that the manner in which the above recited and other aspects of the present invention are obtained can be understood in detail, a more particular description of the invention, briefly summarized below, may be had by reference to the appended drawings, in which:
drawings
Fig. 1 is a schematic top view of a light emitter package structure according to an embodiment;
fig. 2 is a schematic cross-sectional view of a light emitter package structure according to an embodiment;
fig. 3 is a schematic top view of a light emitter package structure according to an embodiment;
fig. 4 is a schematic top view illustrating a light emitter package structure according to another embodiment;
fig. 5 is a schematic perspective view of a light emitter package structure according to yet another embodiment.
Description of the symbols
102. 102', 202, 302: luminous body packaging structure
104: substrate
106. 106A, 106B, 106C, 106D, 106E, 206A, 206B, 206C, 206D, 206E, 306A, 306B, 306C, 306D: electrode layer
108. 108A, 108B, 108C, 108D: light emitting diode chip
110: packaging colloid
112A: the surface of the first substrate
112B: surface of the second substrate
114: luminous surface of chip
116: side surface
318: gap
AA': thread
BB': thread
C. C1, C2, C3: connecting part
D1: a first direction
D2: second direction
D3: third direction
E1: a first electrode part
E2: second electrode part
GS: colloidal surface
P1, P2: cutting track
V1, V2: conductive vias
Detailed Description
Please refer to fig. 1 and fig. 2 simultaneously. Fig. 1 is a top view of a light emitter package structure 102 according to an embodiment, and fig. 2 is a cross-sectional view along line AA' of fig. 1. The light emitter package structure 102 includes a substrate 104, electrode layers 106A to 106E, led chips 108A to 108D, and a molding compound 110. The substrate 104 has a first substrate surface 112A and a second substrate surface 112B opposite to each other.
The electrode layers 106A-106E are sequentially disposed on the first substrate surface 112A of the substrate 104 with a gap therebetween. Each of the electrode layers 106A to 106E sequentially includes a first electrode portion E1, a connection portion C, and a second electrode portion E2 in a first direction D1 (e.g., an arrangement direction, or a length direction of the light emitter package structure 102). The connection portion C is connected between the first electrode portion E1 and the second electrode portion E2. For convenience of understanding, the first electrode portion E1, the connection portion C, and the second electrode portion E2 are hatched in different directions in the drawings, but they do not indicate that they are formed using different materials. In the embodiment, the first electrode portion E1, the connection portion C, and the second electrode portion E2 may be formed of the same conductive material. In the embodiment, in a second direction D2 (e.g., the width direction of the light emitter package structure 102) substantially perpendicular to the first direction D1, the width of the connecting portion C of the electrode layers 106A to 106E is smaller than the width of the first electrode portion E1 and the width of the first electrode portion E2.
The led chips 108A to 108D are disposed on the substrate 104 and connected to the corresponding electrode layers 106A to 106E, respectively. For example, the opposite electrode of the led chip 108B may be connected to the second electrode portion E2 of the electrode layer 106B and the first electrode portion E1 of the electrode layer 106C by flip-chip bonding. The opposite electrode of the led chip 108C may be connected to the second electrode portion E2 of the electrode layer 106C and the first electrode portion E1 of the electrode layer 106D, respectively. And the connection mode between other light emitting diode chips and the electrode layer can be analogized. The LED chips 108A-108D can be electrically connected in series with each other via the electrode layers 106A-106E.
The encapsulant 110 covers the first substrate surface 112A of the substrate 104, the first electrode portion E1, the second electrode portion E2 and the connection portion C of each of the electrode layers 106A to 106E, and the chip light emitting surface 114 and the side surface 116 of each of the led chips 108A to 108D, and has an encapsulant surface GS. For simplicity, fig. 1 shows the arrangement of the substrate 104, the electrode layers 106A to 106E and the led chips 108A to 108D under the gel surface GS in a manner of looking through the encapsulant 110.
In an embodiment, the encapsulant 110 may be formed on a large-area substrate having an array of light emitting cells by using a glue or molding process, so that the encapsulant surface GS is substantially a flat surface. The encapsulant 110 has a substantially flat encapsulant surface GS (light emitting surface of the light emitting package structure) for improving light emitting properties of the light emitting package structure 102. In the embodiment, no reflective element (e.g., a general reflective cup) is disposed between the led chips 108A to 108D, so the led chips 108A to 108D can be arranged at a small pitch, and the light emitted from the led chips 108A to 108D is not blocked or reflected before being emitted out of the gel surface GS, so that the light can be efficiently and directly mixed, and a substantially continuous and uniform linear light source can be generated.
Referring to fig. 3, a method for manufacturing the light emitter package structure 102 according to an embodiment is shown. First, a circuit array, for example, an electrode layer 106 arranged in an array, is formed on a substrate 104; then, the opposite electrodes of each led chip 108 are connected between any two electrode layers 106, for example, between the second electrode portion E2 of one electrode layer 106 and the first electrode portion E1 of the other electrode layer 106, respectively, in a flip-chip manner, so as to form an led array on the substrate 104; then, an encapsulant is coated on the substrate 104 over a large area to cover all the light emitting units and the encapsulant has a substantially flat surface. In the light emitter package structure 102', a plurality of light emitting units each including a corresponding electrode layer 106 and a light emitting diode chip 108 are disposed on a substrate 104 in an array. For example, the molding compound 110 may be applied by glue or molding to cover the light emitting units and the substrate 104 with a large area, and thus has a substantially flat molding surface GS. Finally, the cutting step can be performed on the light emitter package structure 102' according to actual requirements. For example, the cutting steps of the cutting track P1 of the light emitter package structure 102' along the first direction D1 and the cutting track P2 of the second direction D2 may be utilized to obtain the strip-shaped light emitter package structures 102 extending along the first direction D1 or being arranged in a straight line as shown in fig. 1 and fig. 2, but is not limited thereto. In an embodiment, the cutting trace P2 along the second direction D2 crosses the connection portion C of the electrode layer 106, that is, the connection portion C can be used as a break point in the cutting step. Compared with the first electrode part E1 and the second electrode part E2, the connecting part C has smaller width, so that the connecting part C has smaller structural strength and is easier to cut, lower cutting force can be used, the problem of structural damage caused by stress generated by using large cutting force is avoided, and the production yield is improved. In addition, the manufacturing method of the light emitting package structure according to the embodiment is simple and low in cost.
In the comparative example, the light emitting package structure is manufactured by disposing the led chip in the accommodating space defined by the cup body, and then filling the accommodating space with the encapsulant until the led chip is flush with the cup body. However, in some comparative examples, it was found that a protrusion was generated at the edge of the cup body. In some comparative examples, it is found that the light-emitting surface of the encapsulant may have a gradually convex profile from the edge to the center due to the small-area opening of the accommodating space of the cup body. In other words, the encapsulant surface of the encapsulant of the comparative example is an uneven surface rather than a substantially flat surface, and the uneven light emitting surface causes a light spray problem when contacting the light guide plate, which also makes the light emitting performance of the light emitting package structure more prone to a point light source, i.e., a substantially continuous and uniform linear light source.
Compared to the comparative example, the encapsulant 110 of the light emitter package structure 102 according to the embodiment has a substantially flat encapsulant surface GS, does not cause a light emission problem, and can represent a substantially continuous and uniform linear light source, thereby having a better light emission effect. In addition, the manufacturing method of the light emitter package structure 102 according to the embodiment does not need an additional cup, thereby having a lower manufacturing cost. Moreover, in the method for manufacturing the light emitting device package structure 102 according to the embodiment, the encapsulant 110 is directly formed on the substrate 104 and all the light emitting units in a large area, and the manufacturing method is simple and fast.
Fig. 4 shows a top view of a light emitter package structure 202 according to another embodiment, which is a cross-sectional view along the line BB and is similar to fig. 2, but not limited thereto. The difference between the light emitter package 202 of fig. 4 and the light emitter package 102 of fig. 1 is that each of the electrode layers 206A to 206E includes three connecting portions C1 to C3 separated from each other and connected between the first electrode portion E1 and the second electrode portion E2. As shown in fig. 4, the sum of the widths of the respective connection portions C1 to C3 is smaller than the width of the first electrode portion E1 and the width of the second electrode portion E2. Similar to the manufacturing method described with reference to fig. 3, the connecting portions C1-C3 with smaller widths can be used as break points in the cutting step, so that the structural damage problem caused by the cutting step can be avoided, and the product yield can be improved. The present invention is not limited thereto. In other embodiments, the connection portions connected between the first electrode portion E1 and the second electrode portion E2 and separated from each other may have other numbers. Other similar descriptions and functions are not repeated herein.
Fig. 5 shows a perspective view of a light emitter package structure 302 according to yet another embodiment. The difference between the light emitter package structure 302 of fig. 5 and the light emitter package structure 102 of fig. 1 is that the electrode layers 306A to 306D further include conductive vias V1, V2 penetrating through the substrate 104, the first electrode portion E1 and the second electrode portion E2 of the electrode layers 306A to 306D are disposed on the first substrate surface 112A of the substrate 104 and disconnected from each other, the connection portion C is disposed on the second substrate surface 112B of the substrate 104 opposite to the first substrate surface 112A, and the first electrode portion E1 and the second electrode portion E2 of each of the electrode layers 306A to 306D are connected through the conductive vias V1, V2 and the connection portion C of the back surface. For simplicity, fig. 5 shows the arrangement of the first electrode portion E1 and the second electrode portion E2 of the electrode layers 306A-306D on the first substrate surface 112A of the substrate 104 below the molding compound 110 and the led chips 108A-108C in a perspective view, and the conductive vias V1 and V2 passing through the substrate 104 and the connection portions C of the electrode layers (e.g., the electrode layers 306B, 306C) on the second substrate surface 112B of the substrate 104 are drawn in a perspective view. The connecting portion C overlaps with a portion of the first electrode portion E1 and the second electrode portion E2 and overlaps with the gap 318 between the first electrode portion E1 and the second electrode portion E2 in a third direction D3, wherein the third direction D3, for example, the height direction of the light emitter package structure 302, may be substantially perpendicular to the first direction D1 and the second direction D2. The first electrode portion E1 and the first electrode portion E2 of each of the electrode layers 306A to 306D are electrically connected to the connection portion C through the conductive vias V1 and V2. That is, the conductive via V1 is electrically connected between the first electrode portion E1 and the connection portion C. The conductive via V2 is electrically connected between the first electrode portion E2 and the connection portion C. The connection portions C of the electrode layers 306A-306D are on the second substrate surface 112B and are separated from each other. The encapsulant 110 covers the first substrate surface 112A of the substrate 104, the first electrode portion E1 and the second electrode portion E2 of each of the electrode layers 306A to 306D, and the chip light-emitting surface 114 and the side surface 116 of each of the led chips 108A to 108C, and has a substantially flat encapsulant surface GS.
The encapsulant 110 of this example can also be formed on the large-area substrate 104 with the led array by glue injection or molding, so that the formed encapsulant surface GS is a substantially flat surface, which is helpful for the light-emitting properties of the light-emitting package structure 302. In one embodiment, in the second direction D2 (e.g., the width direction of the light emitter package structure 302), the width of the connection portion C of the electrode layers 306A to 306D is smaller than the width of the first electrode portion E1 and the width of the first electrode portion E2. The method for manufacturing the light emitter package structure 302 may include a cutting step along a cutting track of the second direction D2. The dicing trajectory may cross the gap 318 between the first electrode portion E1 and the second electrode portion E2, and the connection portion C overlapping the gap 318. Compared with the first electrode part E1 and the second electrode part E2, the connecting part C has smaller width, so that the connecting part C has smaller structural strength and is easier to cut, lower cutting force can be used, the problem of structural damage caused by stress generated by using large cutting force is avoided, and the production yield is improved. Other similar descriptions and functions are not repeated herein.
According to the above embodiments, the concept of the present invention has at least the following advantages. The encapsulant of the light emitting package structure has a substantially flat encapsulant surface (light emitting surface of the light emitting package structure), which can improve the light emitting property of the light emitting package structure. The packaging colloid can be covered on all the light-emitting units and the substrate in a blanket and large area by a glue injection or die pressing mode, so that the manufacturing method of the light-emitting packaging structure is simple and rapid. In the manufacturing method of the light-emitting packaging structure, the cutting step can be carried out across the connecting part with the smaller width of the electrode layer, so that lower cutting force can be used, the problem that the structure is damaged by stress generated by the cutting force can be avoided, and the production yield is improved.
While the invention is disclosed in conjunction with the above embodiments, it is not intended to limit the invention thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the definition of the appended claims.
Claims (9)
1. A light emitter package structure, comprising:
a substrate;
the plurality of electrode layers are arranged on the substrate, each electrode layer sequentially comprises a first electrode part, at least one connecting part and a second electrode part in an arrangement direction, the connecting part is connected with the first electrode part and the second electrode part, and the width of the at least one connecting part in a width direction perpendicular to the arrangement direction is smaller than the width of the first electrode part and the width of the second electrode part;
the plurality of light emitting diode chips are arranged on the substrate and are respectively connected with the corresponding electrode layers; and
the packaging colloid covers the substrate, the electrode layers and all the light-emitting diode chips and has an overall flat colloid surface.
2. The light emitter package structure of claim 1, wherein at least one of the electrode layers comprises a plurality of connecting portions, the connecting portions being separated from each other and respectively connecting the first electrode portion and the second electrode portion.
3. The light emitter package structure of claim 1, wherein each of the LED chips is electrically connected to the first electrode portion of one of the two adjacent electrode layers and the second electrode portion of the other electrode layer, respectively.
4. The light emitter package structure of claim 1, wherein the LED chips are electrically connected to the electrode layers in a flip-chip manner.
5. The light emitter package structure of claim 1, wherein the planar encapsulant surface is a light emitting surface of the light emitter package structure.
6. The light emitter package according to claim 1, wherein the electrode layers and the LED chips are arranged in a straight line in a stripe-shaped light emitter package.
7. The light emitting device package structure of claim 1, wherein the light emitting diode chips respectively comprise a chip light emitting surface and a side surface, and the encapsulant covers the chip light emitting surfaces and the side surfaces of the light emitting diode chips.
8. The light emitter package structure of claim 1, wherein the LED chips are electrically connected in series with each other through the electrode layers.
9. The light emitter package structure of claim 1, wherein each of the electrode layers sequentially comprises a first electrode portion, a connecting portion and a second electrode portion in an arrangement direction, the first electrode portion and the second electrode portion are disposed on a first substrate surface of the substrate, the connecting portion is disposed on a second substrate surface of the substrate, and the connecting portion electrically connects the first electrode portion and the second electrode portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106129579A TWI658608B (en) | 2017-08-30 | 2017-08-30 | Light emitting packaging structure |
| TW106129579 | 2017-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107863337A CN107863337A (en) | 2018-03-30 |
| CN107863337B true CN107863337B (en) | 2020-02-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711063267.5A Active CN107863337B (en) | 2017-08-30 | 2017-11-02 | Luminous body packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107863337B (en) |
| TW (1) | TWI658608B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101551068A (en) * | 2009-04-30 | 2009-10-07 | 旭丽电子(广州)有限公司 | Light emitting diode device and encapsulating method thereof |
| CN102867818A (en) * | 2011-07-08 | 2013-01-09 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulating structure and manufacturing method thereof |
| CN103904194A (en) * | 2012-12-29 | 2014-07-02 | 展晶科技(深圳)有限公司 | Method for manufacturing light emitting diodes |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8052303B2 (en) * | 2006-09-12 | 2011-11-08 | Huizhou Light Engine Ltd. | Integrally formed single piece light emitting diode light wire and uses thereof |
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2017
- 2017-08-30 TW TW106129579A patent/TWI658608B/en active
- 2017-11-02 CN CN201711063267.5A patent/CN107863337B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101551068A (en) * | 2009-04-30 | 2009-10-07 | 旭丽电子(广州)有限公司 | Light emitting diode device and encapsulating method thereof |
| CN102867818A (en) * | 2011-07-08 | 2013-01-09 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulating structure and manufacturing method thereof |
| CN103904194A (en) * | 2012-12-29 | 2014-07-02 | 展晶科技(深圳)有限公司 | Method for manufacturing light emitting diodes |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107863337A (en) | 2018-03-30 |
| TW201914056A (en) | 2019-04-01 |
| TWI658608B (en) | 2019-05-01 |
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