CN107858658A - A kind of target cooling device - Google Patents
A kind of target cooling device Download PDFInfo
- Publication number
- CN107858658A CN107858658A CN201711436510.3A CN201711436510A CN107858658A CN 107858658 A CN107858658 A CN 107858658A CN 201711436510 A CN201711436510 A CN 201711436510A CN 107858658 A CN107858658 A CN 107858658A
- Authority
- CN
- China
- Prior art keywords
- cooling
- target
- backboard
- cooling medium
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 114
- 239000002826 coolant Substances 0.000 claims abstract description 47
- 239000012530 fluid Substances 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000846 In alloy Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to magnetron sputtering field, relate generally to a kind of target cooling device, including target and cooling target stand, the cooling target stand includes cooling chamber, the cooling chamber upper wall is used to place the target for cooling backboard, the cooling chamber both ends are respectively arranged with cooling medium entrance and cooling medium outlet, upper lower wall is provided with some interlaced with each other and spaced deflector in the cooling chamber, the cooling chamber inner space is set to form the cooling medium runner of tortuous connection, the cooling target stand of this structure can improve the heat exchange area of cooling backboard, simultaneously in flow process tortuous back and forth, cooling medium less turbulence greatly improves, strengthen the heat transfer between cooling medium and target stand, so as to rapidly reduce the temperature of target base.
Description
Technical field
The present invention relates to magnetron sputtering field, relates generally to a kind of target cooling device.
Background technology
Magnetron sputtering is physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) one kind, by target
Cathode surface introduces magnetic field, and plasma density is improved to increase sputtering raste using constraint of the magnetic field to charged particle, because
To carry out high-speed sputtering at low pressure, it is necessary to effectively improve the ionization level of gas, realize sputtering high-speed, low temperature,
Low damage.
Substantial amounts of heat can be sent in sputtering target material production process, if cooled down not in time, easily causes part
Burn or diced phenomenon is presented, in the prior art, be utilized in the mode that cooling duct is set in target stand more, but this kind of side
Formula target stand and target contact area are small, and cooling effect is low, and heat transfer is not notable.
It is 201410124974.0 in number of patent application, patent name is the China of " a kind of cathode arc target cooling device "
Disclose a kind of cathode arc target cooling device (as shown in Figure 1) in patent, including target stand 1, target 2 and be located inside target stand 1
Two cooling water channels 3 side by side, target 2 is on the surface of target stand 1, and target 2 is separated with cooling water channel 3 by copper coin 4, copper coin 4
Cooling water channel 3 is set to adhere to different separate spaces separately from target 2, the edge of copper coin 4 is fixed on target stand 1, and fixed form has use
High intensity heatproof glue by the marginal adhesion of copper coin 4 the top of target stand 2 or using poured up at a time method by the edge of copper coin 4
It is fixed in target stand 2, target 2 is in contact with copper coin 4, its good cooling results, and does not influence vacuum equipment and production efficiency, still
Heat transfer efficiency is relatively low when target contacts with copper coin in the technology.
The content of the invention
Main purpose to be solved by this invention is that heat transfer efficiency is low when solving target cooling in magnetron sputtering field, energy
Lose big technical problem.
In order to solve the above technical problems, the invention provides a kind of target cooling device, including target and cooling target stand,
The cooling target stand includes cooling chamber, and the cooling chamber upper wall is used to place the target, the cooling chamber two for cooling backboard
End is respectively arranged with cooling medium entrance and cooling medium outlet, in the cooling chamber upper lower wall be provided with it is some interlaced with each other and
Every the deflector of setting, the cooling chamber inner space is set to form the cooling medium runner of tortuous connection；The target and cooling
Backboard uses heat bonding so that both fully contacts.
Optionally, the cooling backboard be dentation, the target bottom shape correspondingly cool down backboard so that the target and
The cooling backboard fully engages.
Optionally, the tooth form that the tooth form at the dentation cooling backboard both ends is highly more than in the middle part of dentation cooling backboard is high
Degree.
Optionally, the cooling chamber is divided into two symmetrically arranged isolation provided with a division board among the cooling chamber
Cooling chamber, each isolation cooling chamber bottom is provided with opening close to the division board, wherein close to the cooling medium
The opening of entrance corresponds to middle part cooling medium outlet, and the opening close to cooling medium outlet corresponds to middle part cooling medium
Entrance.
Optionally, the cooling target stand is made of Heat Conduction Material of the thermal conductivity higher than 10W/ (m.k), wherein the heat conduction
Material includes graphene or alloy material.
Optionally, cooling medium is the heat-conducting fluid that thermal conductivity is higher than 0.5W/ (m.k), wherein the heat-conducting fluid is to receive
Meter Liu Ti.
Optionally, the target and cooling backboard junction are provided with filler, the filler be pure indium, indium alloy,
Gun-metal, Zinc-tin alloy or SAC.
Have the beneficial effect that：The cooling target stand of the target cooling device of the present invention includes cooling chamber, and its cooling chamber upper wall is cold
But backboard is used to place target, and cooling chamber both ends are respectively arranged with cooling medium entrance and cooling medium outlet, in cooling chamber on
Lower wall is provided with some interlaced with each other and spaced deflector, cooling chamber inner space is formed the cooling medium of tortuous connection
Runner, the cooling target stand of this structure can improve the heat exchange area of cooling backboard, while in flow process tortuous back and forth,
Cooling medium less turbulence greatly improves, and strengthens the heat transfer between cooling medium and target stand, so as to rapidly reduce target base
Temperature.Strengthen cooling medium and cool down the heat transfer between backboard, so as to rapidly reduce the temperature of target base.
Brief description of the drawings
Accompanying drawing is for providing a further understanding of the present invention, and a part for constitution instruction, with following tool
Body embodiment is used to explain the present invention together, but should not form the limitation of the present invention, in the accompanying drawings：
Fig. 1 is the structural representation of target cooling device in the prior art；
Fig. 2 is the structural representation of the embodiment of the present invention one；
Fig. 3 is the structural representation of the embodiment of the present invention two；
Fig. 4 is the structural representation of the embodiment of the present invention three.
Shown in figure：
10- targets, 20- cooling chambers, 210- cooling backboards；220- cooling medium entrances；230- cooling mediums export；240-
Deflector；Cooling medium outlet in the middle part of 221-；Cooling medium entrance in the middle part of 231-；250- division boards
Embodiment
The embodiment of the present invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
Embodiment one
It is a kind of target cooling device provided by the present invention as shown in figure, including target 10 and cooling target stand, cooling
Target stand includes cooling chamber 20, and the upper wall of cooling chamber 20 is used to place target 10 for cooling backboard 210, and cooling chamber both ends are respectively arranged with
Cooling medium entrance 220 and cooling medium export 230, and upper lower wall is provided with some interlaced with each other and spaced in cooling chamber 20
Deflector 240, cooling chamber inner space is set to form the cooling medium runner of tortuous connection.
Wherein, target stand is cooled down to be made of Heat Conduction Material of the thermal conductivity higher than 10W/ (m.k), such as graphene or alloy
Material；Cooling medium is the heat-conducting fluid that thermal conductivity is higher than 0.5W/ (m.k), wherein the heat-conducting fluid is nano-fluid；In order to
Target and cooling backboard is set fully to contact, both use heat bonding, and target and cooling backboard junction are provided with filler,
Such as pure indium, indium alloy, gun-metal, Zinc-tin alloy or SAC.
The cooling target stand of the target cooling device of the present invention includes cooling chamber, and its cooling chamber upper wall is used to put for cooling backboard
Target is put, cooling chamber both ends are respectively arranged with cooling medium entrance and cooling medium outlet, and upper lower wall is provided with some in cooling chamber
Interlaced with each other and spaced deflector, cooling chamber inner space is set to form the cooling medium runner of tortuous connection, this knot
The cooling target stand of structure can improve the heat exchange area of cooling backboard, and cooling medium flows in cooling medium runner, often touches one
Secondary cooling chamber upper wall just takes away a part, due to foring flow path tortuous back and forth, it is possible to which heat is taken away in repetition, by force
Change cooling medium and cool down the heat transfer between backboard, so as to rapidly reduce the temperature of target base.
Embodiment two
Technical scheme in embodiment two and the technical scheme in embodiment one are essentially identical, and difference is, at this
In embodiment, cooling backboard 210 is dentation, and wherein the bottom shape of target 10 correspondingly cools down backboard 210 so that target is carried on the back with cooling
Plate fully engages, and one can preferably fix target, secondly can improve target and the contact condition of target base, thirdly can
To increase the contact area between target base and target, so as to reduce the temperature of target.
In some magnetron sputtering apparatus, substantial amounts of clout is left at target both ends, therefore, makes dentation cooling backboard both ends
Tooth form is highly more than the tooth form height in the middle part of dentation cooling backboard, can further increase the toothed surface at cooling backboard both ends
Product, so as to further increase target with cooling down the heat exchange area of backboard.
Embodiment three
Technical scheme in embodiment two and the technical scheme in embodiment one are essentially identical, and difference is, at this
In embodiment, cooling chamber is divided into two symmetrically arranged isolation cooling chambers provided with a division board 250 among cooling chamber, it is each
Isolation cooling chamber bottom is provided with opening close to division board, wherein the opening close to cooling medium entrance 220 corresponds to middle part
Cooling medium outlet 221, the opening close to cooling medium outlet 230 correspond to middle part cooling medium entrance 231.
Cooling medium is divided to two passages to respectively enter, and subregion cooling is carried out to target, it is therefore prevented that cooling medium is former cold
But medium runner back segment heat transfer effect reduces, and causes the cooling to target not thorough.
It should be noted that the number of division board can arbitrarily be set as needed, the inlet and outlet number of cooling medium is got over
At most heat-transfer effect is better.
Embodiments of the present invention are explained in detail above in association with accompanying drawing, but the invention is not restricted to described implementation
Mode.For a person skilled in the art, in the case where not departing from the principle of the invention and spirit, to these embodiments
A variety of change, modification, replacement and modification are carried out, are still fallen within protection scope of the present invention.
Claims (9)
1. a kind of target cooling device, including target and cooling target stand, it is characterised in that the cooling target stand includes cooling chamber,
The cooling chamber upper wall is used to place the target for cooling backboard, and the cooling chamber both ends are respectively arranged with cooling medium entrance
Exported with cooling medium, upper lower wall is provided with some interlaced with each other and spaced deflector in the cooling chamber, makes described cold
But chamber inner space forms the cooling medium runner of tortuous connection；The target uses heat bonding so that both fill with cooling backboard
Tap is touched.
2. a kind of target cooling device according to claim 1, it is characterised in that the cooling backboard is dentation, described
Target bottom shape correspondingly cools down backboard so that the target fully engages with the cooling backboard.
A kind of 3. target cooling device according to claim 2, it is characterised in that the tooth at the dentation cooling backboard both ends
Shape is highly more than the tooth form height in the middle part of dentation cooling backboard.
4. a kind of target cooling device according to claim 1 a, it is characterised in that isolation is provided among the cooling chamber
The cooling chamber is divided into two symmetrically arranged isolation cooling chambers by plate, each isolation cooling chamber bottom close to it is described every
Opening is provided with from plate, wherein the opening close to the cooling medium entrance corresponds to middle part cooling medium outlet, close to institute
The opening for stating cooling medium outlet corresponds to middle part cooling medium entrance.
5. a kind of target cooling device according to claim 1, it is characterised in that the cooling target stand is high using thermal conductivity
It is made in 10W/ (m.k) Heat Conduction Material.
A kind of 6. target cooling device according to claim 5, it is characterised in that the Heat Conduction Material include graphene or
Person's alloy material.
7. a kind of target cooling device according to claim 1, it is characterised in that cooling medium is higher than for thermal conductivity
0.5W/ (m.k) heat-conducting fluid.
8. a kind of target cooling device according to claim 7, it is characterised in that the heat-conducting fluid is nano-fluid.
9. according to a kind of any described target cooling devices of claim 1-7, it is characterised in that the target and cooling backboard
Junction is provided with filler, and the filler is pure indium, indium alloy, gun-metal, Zinc-tin alloy or SAC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711436510.3A CN107858658A (en) | 2017-12-26 | 2017-12-26 | A kind of target cooling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711436510.3A CN107858658A (en) | 2017-12-26 | 2017-12-26 | A kind of target cooling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107858658A true CN107858658A (en) | 2018-03-30 |
Family
ID=61707379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711436510.3A Pending CN107858658A (en) | 2017-12-26 | 2017-12-26 | A kind of target cooling device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107858658A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101213319A (en) * | 2005-05-02 | 2008-07-02 | 霍尼韦尔国际公司 | Target assemblies, targets, backing plates, and methods of target cooling |
| CN204529966U (en) * | 2014-10-16 | 2015-08-05 | 海南汉能光伏有限公司 | A kind of cooling backboard and magnetic-controlled sputtering coating equipment |
| CN105282955A (en) * | 2015-08-10 | 2016-01-27 | 东莞中子科学中心 | High-power neutron generation target having minimal heat dissipation channels |
| CN206033869U (en) * | 2016-10-15 | 2017-03-22 | 凯盛光伏材料有限公司 | Novel target cooling system device |
| CN106854752A (en) * | 2015-12-08 | 2017-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering apparatus |
| CN208104526U (en) * | 2017-12-26 | 2018-11-16 | 安徽金美新材料科技有限公司 | A kind of target cooling device |
-
2017
- 2017-12-26 CN CN201711436510.3A patent/CN107858658A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101213319A (en) * | 2005-05-02 | 2008-07-02 | 霍尼韦尔国际公司 | Target assemblies, targets, backing plates, and methods of target cooling |
| CN204529966U (en) * | 2014-10-16 | 2015-08-05 | 海南汉能光伏有限公司 | A kind of cooling backboard and magnetic-controlled sputtering coating equipment |
| CN105282955A (en) * | 2015-08-10 | 2016-01-27 | 东莞中子科学中心 | High-power neutron generation target having minimal heat dissipation channels |
| CN106854752A (en) * | 2015-12-08 | 2017-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering apparatus |
| CN206033869U (en) * | 2016-10-15 | 2017-03-22 | 凯盛光伏材料有限公司 | Novel target cooling system device |
| CN208104526U (en) * | 2017-12-26 | 2018-11-16 | 安徽金美新材料科技有限公司 | A kind of target cooling device |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Building 1, Building A, Building 603, Huaqiang Creative Industry Park, Biyan Community, Guangming Street, Guangming District, Shenzhen City, Guangdong Province, 518000 Applicant after: Shenzhen Jinmei New Material Technology Co.,Ltd. Address before: 232200 R&D Building No. 3 in Chuangkai Science and Technology Park, East Happiness Avenue and North Chuangkai Science and Technology Park, Shouxian Xinqiao International Industrial Park, Huainan City, Anhui Province Applicant before: ANHUI JINMEI NEW MATERIAL TECHNOLOGY CO.,LTD. |
|
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180330 |