CN107845733A - A kind of thin-film packing structure and OLED display panel - Google Patents
A kind of thin-film packing structure and OLED display panel Download PDFInfo
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- CN107845733A CN107845733A CN201610830379.8A CN201610830379A CN107845733A CN 107845733 A CN107845733 A CN 107845733A CN 201610830379 A CN201610830379 A CN 201610830379A CN 107845733 A CN107845733 A CN 107845733A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
The present invention provides a kind of thin-film packing structure and OLED display panel, wherein, the thin-film packing structure is used to encapsulate the function element on substrate, the thin-film packing structure by inorganic matter film with siliceous inorganic polymer film is alternately laminated is formed, the inorganic matter film is the mixed film formed by least two inorganic matters.In the thin-film packing structure, inorganic matter film has preferably barrier water oxygen performance, siliceous inorganic polymer film further improves barrier water oxygen performance, and the function of the stress of inorganic matter film and the particle with cladding in inorganic matter film can be reduced, when being bent, the appearance of micro-crack can be prevented.After testing, the water oxygen permeability of the thin-film packing structure（WVTR）Less than 10‑3g/m2·day.The thin-film packing structure of formation also has planarization effect.
Description
Technical field
The present invention relates to the encapsulation technology field of function element, specifically, is related to a kind of thin-film packing structure and OLED
Display panel.
Background technology
Organic electroluminescent (OLED) device has the characteristics that low in energy consumption, light, brightness is high, the visual field is wide and reaction is fast, this
Outside, a most prominent feature of OLED is that by Flexible Displays function, can be widely used in just
Take in the numerous areas such as formula electronic equipment, wearable electronic equipment, vehicle electronic device.
Flexible OLED devices generally include substrate, the electroluminescent cell on substrate and on electroluminescent cells
Thin-film packing structure.For flexible OLED devices, the packaging effect of thin-film packing structure directly affects its reliability and use
In the life-span, therefore, how flexible OLED devices efficiently to be encapsulated to extend the life-span of device, be those skilled in the art face
The major issue faced.
A kind of existing thin-film packing structure is the encapsulating structure formed by inorganic matter film, another thin-film packing structure
It is generally to be adopted through the alternately laminated encapsulating structure formed, the encapsulating structure of the stacking by inorganic matter film and organic polymer thin film
With three layers or more than three layers of structure, wherein inorganic matter film is used for the ability for improving barrier water oxygen, and organic polymer thin film is used
In reduction stress, while there is the function of coated particle.In above-mentioned encapsulating structure, the inorganic material used is, for example, to nitrogenize
Silicon, silica, aluminum oxide, titanium oxide, zirconium oxide, magnesia, hafnium oxide, the inorganic matter film thickness of formation for 300nm~
1000nm；The organic polymer material used is propenyl polymer, silicon-based polymer or epoxy resin base polyalcohol, formation
Organic polymer thin film thickness is 1 μm~10 μm.The gross thickness of above-mentioned thin-film packing structure usually requires to reach more than 3 μm ability
Realize preferable packaging effect.
For flexible OLED devices, the thickness of thin-film packing structure is thicker, easier its Flexible Displays effect of influence, example
Such as, thickness is thicker, and when carrying out bend test, the radius of curvature of device is more easily affected, and in thin-film packing structure, nothing
The thickness of machine thing film is thicker, and when carrying out bend test, thin-film packing structure is easier small crackle occurs.
The content of the invention
For problems of the prior art, one aspect of the present invention provides a kind of thin-film packing structure, for encapsulating position
In the function element on substrate, the thin-film packing structure is by inorganic matter film and the siliceous alternately laminated shape of inorganic polymer film
Into the inorganic matter film is the mixed film formed by least two inorganic matters.
Another aspect of the present invention provides a kind of OLED display panel, including substrate, the electroluminescent on the substrate
Element and on the substrate and cover the thin-film packing structure of the electroluminescent cell, the thin-film packing structure is upper
The thin-film packing structure stated.
Compared with prior art, a kind of thin-film packing structure provided by the invention and OLED display panel at least have following
Beneficial effect：In the thin-film packing structure, inorganic matter film has preferably barrier water oxygen performance, siliceous inorganic polymer film
Barrier water oxygen performance is further improved, and the stress of inorganic matter film can be reduced and had in the neighbouring inorganic matter film of cladding
Particle function, when being bent, the appearance of micro-crack can be prevented.After testing, the water oxygen of the thin-film packing structure is oozed
Saturating rate (WVTR) is less than 10-3g/m2·day.The thin-film packing structure of formation also has planarization effect.
Brief description of the drawings
Fig. 1 is that the thin-film packing structure of the embodiment of the present invention is used for the schematic diagram of encapsulation function device；
Fig. 2 is the thin-film packing structure schematic diagram of one embodiment of the invention；
Fig. 3 is the structural representation of the OLED display panel of one embodiment of the invention.
Embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that the present invention more
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Identical is attached in figure
Icon note represents same or similar structure, thus will omit repetition thereof.
The word of described expression position and direction, is the explanation carried out by taking accompanying drawing as an example in the present invention, but according to need
It can also make a change, make change and be all contained in the scope of the present invention.
One aspect of the present invention provides a kind of new thin film packaging material, and the thin film packaging material is siliceous inorganic polymer,
Siliceous inorganic polymer had both had the higher barrier water oxygen performance of inorganic matter thin-film material, it may have organic polymer thin film material
The flexibility and flexural property of material, the stress of material can be significantly reduced and lift the flexibility function of OLED display panel, formation
Thin-film packing structure is not easy micro-crack occur.
In a preferred embodiment, above-mentioned siliceous inorganic polymer is selected from poly- silicon nitride, polyoxy SiClx, poly- nitrogen oxidation
One or more in silicon, poly- carbonitride of silicium, poly- silicon oxide carbide, poly- carbon silicon oxynitride.Wherein, poly- silicon nitride is by nitrogen and element silicon
Composition；Polyoxy SiClx is made up of oxygen and element silicon；Poly- silicon oxynitride is made up of nitrogen, oxygen and element silicon；Poly- carbonitride of silicium is by carbon, nitrogen
Formed with element silicon；Poly- silicon oxide carbide is made up of carbon, oxygen and element silicon；Poly- carbon silicon oxynitride is by carbon, nitrogen, oxygen and element silicon group
Into.
In a preferred embodiment, poly- silicon nitride has the structure as shown in formula (1), and polyoxy SiClx has such as formula (2)
Shown structure, poly- silicon oxynitride have the structure as shown in formula (3), and poly- carbonitride of silicium has the structure as shown in formula (4), gathers
Silicon oxide carbide has the structure as shown in formula (5), and poly- carbon silicon oxynitride has the structure as shown in formula (6), wherein, n is integer,
Preferably, n scope is n >=1,
It should be noted that invention does not limit poly- silicon nitride, polyoxy SiClx, poly- silicon oxynitride, poly- carbonitride of silicium, poly- carbon oxygen
The order of connection and END CAPPED GROUP of each element in SiClx, poly- carbon silicon oxynitride.For example, poly- silicon oxynitride, poly- carbonitride of silicium, poly- carbon oxygen
In SiClx, poly- carbon silicon oxynitride, silicon, oxygen, nitrogen, the order of connection of carbon and arrangement mode can be realized in many ways, make to change
Become in the range of poly- silicon oxynitride, poly- carbonitride of silicium, poly- silicon oxide carbide, poly- carbon silicon oxynitride.
Further, the siliceous and polymer of two kinds of elements of nitrogen is in the range of the poly- silicon nitride of the present invention；Siliceous and oxygen
The polymer of two kinds of elements is in the range of the polyoxy SiClx of the present invention；The polymer of three kinds of elements of siliceous, nitrogen and oxygen is at this
In the range of the poly- silicon oxynitride of invention；The polymer of three kinds of elements of siliceous, nitrogen and carbon is in the poly- carbonitride of silicium scope of the present invention
It is interior；The polymer of three kinds of elements of siliceous, oxygen and carbon is in the range of the poly- silicon oxide carbide of the present invention；Four kinds of siliceous, nitrogen, carbon and oxygen
The polymer of element is in the range of the poly- carbon silicon oxynitride of the present invention.
The END CAPPED GROUP of poly- silicon nitride can be nitrogen or silicon；The END CAPPED GROUP of polyoxy SiClx can be oxygen or
Silicon；The END CAPPED GROUP of poly- silicon oxynitride silica can be nitrogen or oxygen or silicon；The END CAPPED GROUP of poly- carbonitride of silicium can be nitrogen
Or carbon or silicon；The END CAPPED GROUP of poly- silicon oxide carbide can be oxygen or carbon or silicon；The end-blocking of poly- carbon silicon oxynitride
Base can be nitrogen, carbon or oxygen or silicon.
Fig. 1 is refer to, another aspect of the present invention provides a kind of thin-film packing structure 30, for encapsulating on substrate 10
Function element 20, the material of the thin-film packing structure 30 include above-mentioned thin film packaging material.
Rigid substrates can be selected in substrate 10, can also select flexible base board, flexible aobvious to realize preferably using flexible base board
Show function.Rigid substrates for example can be glass substrate, quartz base plate.Flexible base board for example can be polyimide substrate (PI
Substrate), polyamide substrate, polycarbonate substrate, the organic polymer substrate such as polyether sulfone substrate.
Function element 20 include but is not limited to electroluminescent cell, liquid crystal display device, solar cell, hull cell,
The electronic devices such as organic sensor.
Thin-film packing structure 30 can be single layer structure or sandwich construction.
Specifically, when thin-film packing structure 30 is single layer structure, it can be by a kind of thing in siliceous inorganic polymer
Matter is made, and can also be made up of two or more siliceous inorganic polymer, and the thickness of thin-film packing structure 30 of formation is
50nm~50 μm, preferably 100nm~20 μm, after testing, the water oxygen permeability of the thin-film packing structure 30 of single layer structure
(WVTR) it is less than 10-3g/m2·day.The thin-film packing structure 30 of formation also has planarization effect.
When thin-film packing structure 30 is sandwich construction, thin-film packing structure 30 both can by organic polymer thin film with it is siliceous
The alternately laminated formation of inorganic polymer film, can also be by inorganic matter film and the siliceous alternately laminated shape of inorganic polymer film
Into the thickness of thin-film packing structure 30 of formation is 50nm~50 μm, preferably 100nm~20 μm.
Specifically, Fig. 2 is refer to, thin-film packing structure 30 is thin by organic polymer thin film 32 and siliceous inorganic polymer
Both can be organic polymer thin film 32 positioned at orlop and/or the film of the superiors during 31 alternately laminated formation of film, can also
It is siliceous inorganic polymer film 31,1~100 layer of siliceous inorganic polymer film can be included in the thin-film packing structure 30
31.In thin-film packing structure 30, the thickness of the organic polymer thin film 32 of individual layer is 10nm~50 μm, the μ of preferably 100nm~20
m；The thickness of the siliceous inorganic polymer film 31 of individual layer is 10nm~50 μm, preferably 30nm~20 μm.Wherein, the present invention not
Limit organic polymer thin film 32 material, as an example, can be selected from polyimides, polyamide, makrolon, polypropylene,
One or more in polyacrylic acid, polyacrylate, polyethylene, polystyrene.
It is above-mentioned by organic polymer thin film 32 and the alternately laminated thin-film package knot formed of siliceous inorganic polymer film 31
In structure 30, siliceous inorganic polymer film 31 not only has preferably barrier water oxygen performance, and can reduce membrane stress；Have
Machine thin polymer film 32 can not only play flexibility function, and can further reduce membrane stress, when being bent, energy
Enough prevent the appearance of micro-crack.After testing, the water oxygen permeability (WVTR) of the thin-film packing structure 30 is less than 10-3g/m2·day。
The thin-film packing structure 30 of formation also has planarization effect.
Fig. 2 is refer to, thin-film packing structure 30 is alternately laminated by inorganic matter film 33 and siliceous inorganic polymer film 31
Both can be inorganic matter film 33 or siliceous inorganic polymer positioned at orlop and/or the film of the superiors during formation
Film 31,1~100 layer of siliceous inorganic polymer film 31 can be included in the thin-film packing structure 30.Thin-film packing structure
In 30, the thickness of the inorganic matter film 33 of individual layer is 10nm~5 μm, preferably 30nm~2 μm；The siliceous inorganic polymeric of individual layer
The thickness of thing film 31 is 10nm~50 μm, preferably 30nm~20 μm.
Wherein, the material of inorganic matter film 33 is preferably ZrO2、Al2O3、AlN、AlON、SiO2、Si3N4、SiON、SiCN、
MgO、CaO、WO3、TiO2、TiN、Ti3N4、ZrN、Zr3N4、ZnO、Ta2O5、HfO2、HfN、In2O3、CeO2Or Ce2O3.Inorganic matter is thin
The material of film 33 both can selected from a kind of material in above-mentioned inorganic material, can also be in above-mentioned inorganic material at least two
Kind.
Specifically, so that the material of inorganic matter film 33 is selected from above two inorganic material as an example, the inorganic matter of formation is thin
Film 33 is the mixture film of two kinds of inorganic material, as an example, Al2O3And ZrO2It is ZrAl that composition, which can be formed,xOyFilm,
ZnO and Al2O3It is ZnAl that composition, which can be formed,xOyFilm, TiO2And Al2O3It is TiAl that composition, which can be formed,xOyFilm,
Ta2O5It is TaZn that can form composition with ZnOxOyFilm, Ta2O5And ZrO2It is TaZr that composition, which can be formed,xOyFilm.On
The scope for stating x and y in mixing inorganic material is 0~1, and concrete numerical value changes and changed with the ratio of two kinds of inorganic material, and
The present invention does not limit the ratio of two kinds of inorganic material.
The inorganic matter film 33 formed by two kinds of inorganic material can be formed by atomic layer deposition method or sputtering method, specifically
Ground is said, is formed with sputtering method and formation as ZrAlxOyFilm exemplified by, by Al2O3And ZrO2Respectively as the first target and second
Target, control sputtering power and sputtering time etc. target is sputtered, and Al is formed in substrate surface2O3And ZrO2Blend films
Layer.
It is above-mentioned by inorganic matter film 33 and the alternately laminated thin-film packing structure 30 formed of siliceous inorganic polymer film 31
In, inorganic matter film 33 has preferably barrier water oxygen performance, and siliceous inorganic polymer film 31 further improves barrier water oxygen
Performance, and the function of the stress of inorganic matter film 33 and the particle with cladding in inorganic matter film 33 can be reduced,
When being bent, the appearance of micro-crack can be prevented.After testing, the water oxygen permeability (WVTR) of the thin-film packing structure 30 is small
In 10-3g/m2·day.The thin-film packing structure 30 of formation also has planarization effect.
Siliceous inorganic polymer film 31 and inorganic matter film 33 in thin-film packing structure 30 of the present invention can be by more
Kind method is made, as an example, thermal evaporation deposition, spin-coating method, spraying process, silk screen print method, ink jet printing method, sputtering can be used
Method, vacuum deposition method, electron-beam vapor deposition method, atomic layer deposition method, chemical vapour deposition technique, PECVD sink
Area method, high density plasma CVD method, inductively coupled plasma chemical vapour deposition technique, Capacitance Coupled etc. from
Son enhancing chemical vapour deposition technique, surface wave plasma chemical vapour deposition technique or ion-beam assisted deposition are formed.
Organic polymer thin film 32 in thin-film packing structure 30 of the present invention can be made by a variety of methods, as showing
Example, can be formed using such as spin-coating method, spraying process, dip coating rubbing method.
Further aspect of the present invention provides a kind of OLED display panel, and the display panel includes substrate, the electricity on substrate
Electroluminescent element and on substrate and the thin-film packing structure of electroluminescent cell is covered, wherein, the thin-film packing structure is
Above-mentioned thin-film packing structure 30.
Specifically, Fig. 3 is refer to, electroluminescent cell comprises at least anode layer 21, luminescent layer 22 and cathode layer 23, and
And it may further include hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, electron transfer layer, electronics note
Enter one or more layers (not shown) in layer.Electroluminescent cell can also include pixel defining layer 24, the pixel defining layer 24
Electroluminescent cell is limited into multiple pixel regions.Material used by structure and each functional layer used by electroluminescent cell
Expect for known technology, to will not be described here.
Further, electroluminescent cell is formed on flexible base board 11 to realize Flexible Displays function, electroluminescent member
Be further provided with tft layer 40 between part and flexible base board 11, tft layer 40 comprise at least active layer, source class,
Drain electrode, grid, insulating barrier (not shown), the drain electrode of tft layer 40 and the anode layer 21 of electroluminescent cell electrically connect
Connect.Tft layer 12 uses known structure, will not be described here.
Further, flatness layer 50, the anode layer of electroluminescent cell 21 are additionally provided with tft layer 40
In on the flatness layer 50, and the drain electrode for passing through the via in flatness layer 50 and tft layer 12 is electrically connected with.
In the present embodiment, thin-film packing structure 30 covers the cathode layer 23 of electroluminescent cell, by electroluminescent cell
Keep apart with the steam in surrounding environment, oxygen, the organic material for preventing water oxygen from corroding in electroluminescent cell, extend OLED
The service life of display panel.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art is not departing from the principle and objective of the present invention
In the case of above-described embodiment can be changed within the scope of the invention, change, replace and modification.
Claims (12)
- A kind of 1. thin-film packing structure, for encapsulating the function element on substrate, it is characterised in that the thin-film package knot Structure by inorganic matter film with siliceous inorganic polymer film is alternately laminated is formed, the inorganic matter film is inorganic by least two The mixed film that thing is formed.
- 2. thin-film packing structure according to claim 1, it is characterised in that the siliceous inorganic polymer is selected from poly- nitridation One or more in silicon, polyoxy SiClx, poly- silicon oxynitride, poly- carbonitride of silicium, poly- silicon oxide carbide, poly- carbon silicon oxynitride.
- 3. thin-film packing structure according to claim 2, it is characterised in that the poly- silicon nitride is by nitrogen and element silicon group Into；The polyoxy SiClx is made up of oxygen and element silicon；The poly- silicon oxynitride is made up of nitrogen, oxygen and element silicon；The poly- carbon nitrogen SiClx is made up of carbon, nitrogen and element silicon；The poly- silicon oxide carbide is made up of carbon, oxygen and element silicon；The poly- carbon silicon oxynitride by Carbon, nitrogen, oxygen and element silicon composition.
- 4. thin-film packing structure according to claim 2, it is characterised in that the poly- silicon nitride has as shown in formula (1) Structure, the polyoxy SiClx has structure as shown in formula (2), and the poly- silicon oxynitride has the structure as shown in formula (3), The poly- carbonitride of silicium has the structure as shown in formula (4), and the poly- silicon oxide carbide has the structure as shown in formula (5), described Poly- carbon silicon oxynitride has the structure as shown in formula (6), wherein, n is integer,
- 5. thin-film packing structure according to claim 4, it is characterised in that the scope of the n is n >=1.
- 6. thin-film packing structure according to claim 1, it is characterised in that the material of the inorganic matter film is selected from oxidation Thing, nitride, nitrogen oxides or carbonitride.
- 7. thin-film packing structure according to claim 6, it is characterised in that the material of the inorganic matter film is selected from ZrO2、 Al2O3、AlN、AlON、SiO2、Si3N4、SiON、SiCN、MgO、CaO、WO3、TiO2、TiN、Ti3N4、ZrN、Zr3N4、ZnO、 Ta2O5、HfO2、HfN、In2O3、CeO2、Ce2O3。
- 8. thin-film packing structure according to claim 1, it is characterised in that the thickness of the inorganic matter film be 10nm~ 5 μm, the thickness of the siliceous inorganic polymer film is 10nm~50 μm.
- 9. thin-film packing structure according to claim 1, it is characterised in that the thickness of the thin-film packing structure is 30nm ~50 μm.
- 10. thin-film packing structure according to claim 1, it is characterised in that the thin-film packing structure includes 1~ 100 layers of the siliceous inorganic polymer film.
- 11. a kind of OLED display panel, including substrate, the electroluminescent cell on the substrate and on the substrate And cover the thin-film packing structure of the electroluminescent cell, it is characterised in that the thin-film packing structure be claim 1 to Thin-film packing structure described in 10 any one.
- 12. OLED display panel according to claim 11, it is characterised in that the substrate is flexible base board.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610830379.8A CN107845733A (en) | 2016-09-19 | 2016-09-19 | A kind of thin-film packing structure and OLED display panel |
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| CN201610830379.8A CN107845733A (en) | 2016-09-19 | 2016-09-19 | A kind of thin-film packing structure and OLED display panel |
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