CN107845709A - A kind of nitride semiconductor LED - Google Patents

A kind of nitride semiconductor LED Download PDF

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Publication number
CN107845709A
CN107845709A CN201710935627.XA CN201710935627A CN107845709A CN 107845709 A CN107845709 A CN 107845709A CN 201710935627 A CN201710935627 A CN 201710935627A CN 107845709 A CN107845709 A CN 107845709A
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pits
nitride
barrier
side walls
hole
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CN107845709B (en
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郑锦坚
周启伦
钟志白
陈松岩
康俊勇
杜伟华
李志明
邓和清
臧雅姝
伍明跃
徐宸科
林峰
李水清
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a kind of nitride semiconductor LED, including：N-type nitride-based semiconductor, MQW, p-type nitride-based semiconductor；The MQW has V pits；The side wall of the V pits has V pits side wall barrier layers,The V pits side wall barrier layers include the combination of V pits side walls electronic barrier layers and V pits side wall hole blocking layers,The barrier height of the V pits side wall electronic barrier layers is more than the barrier height of first nitride-based semiconductor of the MQW without V pits overlying regions,The barrier height of the V pits side wall hole blocking layers is more than the barrier height of second nitride-based semiconductor of the MQW without V pits overlying regions,The electronic barrier layer and hole blocking layer of the V pits side walls form high potential barrier,Stop that electronics and hole transport toward V pits centers,Prevent from being absorbed by the threading dislocation of V pits bottoms and produce non-radiative recombination,Electronics and hole are lifted in the vertical transport along c-axis without V pits regions,Lift electronics and injection and the combined efficiency in hole.

Description

A kind of nitride semiconductor LED
Technical field
The present invention relates to semiconductor photoelectric device field, particularly a kind of nitride-based semiconductor hair with side wall barrier layer Optical diode.
Background technology
Now, nitride semiconductor LED（LED）, because of its higher luminous efficiency, wavelength continuously adjustabe, energy-conservation The advantages that environmentally friendly, indoor white-light illuminating, mobile phone backlight illumination, television backlight illumination, display illumination, road are widely used at present The fields such as lamp, Landscape Lamp.Acted on, can be lifted active by local quantum confinement using the iii-nitride light emitting devices of quantum structure The electronics in area and the overlapping probability and combined efficiency of hole wave functions, make quantum efficiency be promoted to a new step again.Due to Group III-nitride typically carries out hetero-epitaxy in the foreign substrate such as sapphire or SiC, lattice mismatch between different materials and Thermal mismatching can produce dislocation or defect, and these dislocation lines can upwardly extend with the growth of epitaxial layer.Particularly growing InGaN/GaN SQW processes, because growth temperature is relatively low, layer by layer between growth it is destroyed and form V- in quantum well region pits.Because V-pits center is connected to dislocation line, if electronics and hole are captured when injecting SQW by V-pits, electricity Son and hole can carry out non-radiative recombination in the dislocation line at V-pits centers, reduce combined efficiency.
The Chinese patent of Application No. 201710050629.0 discloses a kind of gallium nitride based light emitting diode, its active layer There is V-type defect on surface and connect the plane area of the V-type defect, described can be the n with enough low band gaps with contorted strata Type nitride layer, cause the energy band distortion of electronic barrier layer, reduce effective barrier height of the electronic barrier layer to hole, strengthen empty Efficiency of the cave from C-plane injections.The patent is actual by inserting one layer of low band gap between electronic barrier layer and p-type nitride N-type nitride, make electronic barrier layer can band distortion, reduce V-type defect side wall potential barrier, so as to strengthen hole from V-type The C-plane side walls injection SQW of defect.When more multi-hole injects SQW from side wall, then inevitably make more Hole be connected V-pits dislocation line and captured so that non-radiative recombination becomes strong, reduction luminous efficiency.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention proposes a kind of nitride semiconductor LED, including：N-type nitrogen Compound semiconductor, MQW, p-type nitride-based semiconductor；The MQW has V-pits；The side wall tool of the V-pits There are V-pits side wall barrier layers, the V-pits side wall barrier layers include V-pits side walls electronic barrier layer and V-pits side walls are empty The combination on cave barrier layer, the more SQW of barrier height of the V-pits side walls electronic barrier layer is without V-pits overlying regions At least high 500 meV of the barrier height of mononitride semiconductor, the barrier height of the V-pits side walls hole blocking layer are more At least high 500 meV of barrier height of the SQW without the second nitride-based semiconductor above V-pits, the V-pits side walls Electronic barrier layer and hole blocking layer form high potential barrier, stop that electronics and hole transport toward V-pits centers, prevent by V-pits The threading dislocation of bottom, which absorbs, produces non-radiative recombination, lifts electronics and hole defeated along the longitudinal direction of c-axis without V-pits regions Fortune, lift electronics and injection and the combined efficiency in hole.
A kind of nitride semiconductor LED with V-pits side wall barrier layers, including substrate, cushion, N-type Nitride-based semiconductor, there is V-pits MQW, V-pits, V-pits side wall electronic barrier layers, V-pits side walls hole Barrier layer, first nitride-based semiconductor of the SQW without V-pits overlying regions, the second nitride-based semiconductor, V-pits closings are filled out Fill layer, p-type nitride-based semiconductor, p-type contact layer, V-pits side wall has a V-pits side wall barrier layers, the V-pits The V-pits side wall barrier layers of side wall include times of a V-pits side walls electronic barrier layer and a V-pits side wall hole blocking layers Meaning combination, the more SQW of barrier height of the V-pits side walls electronic barrier layer is without the first nitride above V-pits half At least high 500 meV of the barrier height of conductor, the more SQW of barrier height of the V-pits side walls hole blocking layer is without V- At least high 500 meV of the barrier height of the second nitride-based semiconductor above pits.
Further, the material of the V-pits side walls electronic barrier layer is AlxGa1-xOr AlxGa1-x/ GaN superlattices, institute The material for stating first nitride-based semiconductor of the SQW without V-pits overlying regions is AlyGa1-yOr AlyGa1-y/ GaN, and 1 >=x >=0,1 >=y >=0, x and y must are fulfilled for (y-x) Eg（GaN）+（x-y）Eg（AlN）- b [x (1-x)-y (1-y)] >=0.5, wherein b are Bending coefficient, 5 >=b >=1.
Further, the material of the V-pits side walls hole blocking layer is AlmGa1-mOr AlmGa1-m/ GaN superlattices, institute The material for stating second nitride-based semiconductor of the SQW without V-pits overlying regions is AlnGa1-nOr AlnGa1-n/ GaN, and 1 >=m >=0,1 >=n >=0, m and n must are fulfilled for (n-m) Eg（GaN）+（m-n）Eg（AlN）- b [m (1-m)-n (1-n)] >=0.5, wherein b are Bending coefficient, 5 >=b >=1.
Further, the barrier height of the V-pits side walls electronic barrier layer compared with SQW without V-pits overlying regions At least high 500 meV of the barrier height of first nitride-based semiconductor, makes the electronics of injection SQW can not cross V-pits side walls The potential barrier of electronic barrier layer, electronics lift the electron injection efficiency of SQW along c-axis vertical transport.
Further, the barrier height of the V-pits side walls hole blocking layer compared with SQW without V-pits overlying regions At least high 500 meV of the barrier height of second nitride-based semiconductor, makes the hole of injection SQW can not cross V-pits side walls The potential barrier of hole blocking layer, hole lift the hole injection efficiency of SQW along c-axis vertical transport.
Further, the barrier layer shape that the V-pits side walls electronic barrier layer and V-pits side walls hole blocking layer are formed Into high potential barrier, stop that electronics and hole transport toward V-pits centers, prevent non-by the threading dislocation absorption generation of V-pits bottoms Radiation recombination, lift electronics and hole in the vertical transport along c-axis without V-pits regions, lifted electronics and hole injection and Combined efficiency.
Further, the V-pits closings filling layer material is the IIIs such as undoped GaN or AlGaN or AlInGaN Nitride, lateral growth speed is lifted by V-pits closure of openings by high-temperature low-pressure method, meanwhile, formed by non-impurity-doped V-pits high resistance area, further stop that hole transports toward V-pits center, reduces non-radiative recombination.
Brief description of the drawings
Fig. 1 is the structural representation of conventional nitride semiconductor light-emitting-diode.
Fig. 2 is a kind of structure of nitride semiconductor LED with V-pits side wall barrier layers of embodiment 1 Schematic diagram.
Fig. 3 is a kind of effect of nitride semiconductor LED with V-pits side wall barrier layers of embodiment 1 Schematic diagram.
Fig. 4 is a kind of structure of nitride semiconductor LED with V-pits side wall barrier layers of embodiment 2 Schematic diagram.
Fig. 5 is a kind of structure of nitride semiconductor LED with V-pits side wall barrier layers of embodiment 3 Schematic diagram.
Fig. 6 is a kind of structure of nitride semiconductor LED with V-pits side wall barrier layers of embodiment 4 Schematic diagram.
Illustrate：100：Substrate；101：Cushion, 102：N-type nitride-based semiconductor, 103：MQW, 104：P-type Nitride-based semiconductor, 105：P-type contact layer, 106：V-pits, 107：V-pits side wall electronic barrier layers, 108：SQW is without V- First nitride-based semiconductor of pits overlying regions, 109：V-pits side wall hole blocking layers, 110：SQW is without V-pits areas The second nitride-based semiconductor above domain, 111：V-pits closes packed layer.
Embodiment
Embodiment 1
As shown in figure 1, traditional iii-nitride light emitting devices are typically by substrate 100, cushion 101, N-type nitride-based semiconductor 102, MQW 103, p-type nitride-based semiconductor 104, p-type contact layer 105 forms, and wherein MQW 103 typically has V- pits 106.Because group III-nitride typically carries out hetero-epitaxy in the foreign substrate such as sapphire or SiC, different materials it Between lattice mismatch and thermal mismatching can produce dislocation or defect, and these dislocation lines can prolong upwards with the growth of epitaxial layer Stretch.Particularly in growth InGaN/GaN SQW processes, because growth temperature is relatively low, layer by layer between growth it is destroyed and Quantum well region forms V-pits.Because V-pits center is connected to dislocation line, if electronics and hole are when injecting SQW Captured by V-pits, then electronics and hole can carry out non-radiative recombination in the dislocation line at V-pits centers, reduce combined efficiency.
In order to solve the problems, such as that the dislocation line trapped electron for being connected to V-pits centers and hole form non-radiative recombination, this Invention proposes a kind of nitride semiconductor LED with V-pits side wall barrier layers, and V-pits side wall has a V- Pits side wall barrier layers, the V-pits side wall barrier layers of the V-pits side walls include a V-pits side walls electronic barrier layer 107 With any combination of a V-pits side walls hole blocking layer 109, V-pits side wall at least has a V-pits side wall electronics Barrier layer 107 and V-pits side walls hole blocking layer 109, the barrier height of the V-pits side walls electronic barrier layer 107 are more At least high 500 meV of barrier height of the SQW without the first nitride-based semiconductor 108 above V-pits, the V-pits side walls Barrier height of the 109 more SQW of barrier height of hole blocking layer without the second nitride-based semiconductor 110 above V-pits At least high 500 meV, the V-pits side walls electronic barrier layer 107 and V-pits side walls hole blocking layer 109 form high potential barrier, Stop that electronics and hole transport toward V-pits centers, prevent from absorbing generation non-radiative recombination by the threading dislocation of V-pits bottoms, Electronics and hole are lifted in the vertical transport along c-axis without V-pits regions, lifts electronics and injection and the combined efficiency in hole.
A kind of nitride semiconductor LED, including substrate 100, cushion 101, N-type nitride-based semiconductor 102, MQW 103 with V-pits, V-pits 106, V-pits side walls electronic barrier layer 107, V-pits side wall hole barriers Layer 109, first nitride-based semiconductor 108 of the SQW without V-pits overlying regions, the second nitride-based semiconductor 110, V-pits Close packed layer 111, p-type nitride-based semiconductor 104, p-type contact layer 105, it is characterised in that：V-pits side wall has a V- Pits side wall barrier layers, the V-pits side wall barrier layers of the V-pits side walls include a V-pits side walls electronic barrier layer and one Any combination of V-pits side wall hole blocking layers, V-pits side wall at least have a V-pits side wall electronic barrier layer 107 and V-pits side walls hole blocking layer 109, the barrier height of the V-pits side walls electronic barrier layer 107 is compared with the first nitridation At least high 500 meV of the barrier height of thing semiconductor 108, the barrier height of the V-pits side walls hole blocking layer 109 is compared with At least high 500 meV of the barrier height of diammine semiconductor 110.
The material of the V-pits side walls electronic barrier layer 107 is AlxGa1-xOr AlxGa1-x/ GaN superlattices, the quantum The material of first nitride-based semiconductor of the trap without V-pits overlying regions is AlyGa1-yOr AlyGa1-y/ GaN, and 1 >=x >=0,1 >= Y >=0, x and y must are fulfilled for (y-x) Eg（GaN）+（x-y）Eg（AlN）- b [x (1-x)-y (1-y)] >=0.5, wherein b are for bending Number, 5 >=b >=1.
The material of the V-pits side walls hole blocking layer 109 is AlmGa1-mOr AlmGa1-m/ GaN superlattices, the quantum The material of second nitride-based semiconductor of the trap without V-pits overlying regions is AlnGa1-nOr AlnGa1-n/ GaN, and 1 >=m >=0,1 >= N >=0, m and n must are fulfilled for (n-m) Eg（GaN）+（m-n）Eg（AlN）- b [m (1-m)-n (1-n)] >=0.5, wherein b are for bending Number, 5 >=b >=1.
The barrier height of the V-pits side walls electronic barrier layer 107 is compared with first nitrogen of the SQW without V-pits overlying regions At least high 500 meV of the barrier height of compound semiconductor 108, makes the electronics of injection SQW can not cross V-pits side wall electronics The potential barrier on barrier layer 107, electronics lift the electron injection efficiency of SQW along c-axis vertical transport.
The barrier height of the V-pits side walls hole blocking layer 109 is compared with second nitrogen of the SQW without V-pits overlying regions At least high 500 meV of the barrier height of compound semiconductor 110, makes the hole of injection SQW can not cross V-pits side walls hole The potential barrier on barrier layer 109, hole lift the hole injection efficiency of SQW along c-axis vertical transport.
The barrier layer that the V-pits side walls electronic barrier layer 107 and V-pits side walls hole blocking layer 109 are formed is formed High potential barrier, stop that electronics and hole transport toward V-pits centers, prevent from absorbing the non-spoke of generation by the threading dislocation of V-pits bottoms Penetrate compound, lift electronics and hole in the vertical transport along c-axis without V-pits regions, make electronics and hole mainly along without V- Pits zone-transports, lift electronics and injection and the combined efficiency in hole.
V-pits closing packed layers 111 material is the nitridation of the IIIs such as undoped GaN or AlGaN or AlInGaN Thing, lateral growth speed is lifted by V-pits closure of openings by high-temperature low-pressure method, meanwhile, V- is formed by non-impurity-doped Pits high resistance area, further stop that hole transports toward V-pits center, reduces non-radiative recombination.
Embodiment 2
In order to solve the problems, such as that the dislocation line trapped electron for being connected to V-pits centers and hole form non-radiative recombination, this implementation Example proposes a kind of nitride semiconductor LED with V-pits side wall barrier layers, and V-pits side wall at least has one Individual V-pits side walls electronic barrier layer 107 and V-pits side walls hole blocking layer 109, the V-pits side walls electronic barrier layer 107 barrier height, 500 meV at least high compared with the barrier height of the first nitride-based semiconductor 108, the V-pits side walls hole The barrier height 109 on barrier layer 500 meV at least high compared with the barrier height of the second nitride-based semiconductor 110, the V-pits sides Wall electronic barrier layer 107 and V-pits side walls hole blocking layer 109 form high potential barrier, stop electronics and hole toward V-pits centers Transport, prevent from absorbing generation non-radiative recombination by the threading dislocation of V-pits bottoms, lift electronics and hole without V-pits areas The vertical transport along c-axis in domain, lift electronics and injection and the combined efficiency in hole.
As shown in figure 4, a kind of nitride semiconductor LED with V-pits side wall barrier layers, including substrate 100, cushion 101, N-type nitride-based semiconductor 102, there is V-pits MQW 103, V-pits 106, V-pits sides Wall electronic barrier layer 107, V-pits side walls hole blocking layer 109, first nitride of the SQW without V-pits overlying regions half Conductor 108, the second nitride-based semiconductor 110, V-pits closing packed layers 111, p-type nitride-based semiconductor 104, p-type contact layer 105, V-pits side wall has a V-pits side wall barrier layers, and the V-pits side wall barrier layers of the V-pits side walls include one Any combination of V-pits side walls electronic barrier layer 107 and a V-pits side walls hole blocking layer 109, V-pits side wall is at least With a V-pits side walls electronic barrier layer 107 and V-pits side walls hole blocking layer 109, the V-pits side walls electronics resistance The barrier height of barrier 107 500 meV at least high compared with the barrier height of the first nitride-based semiconductor 108, the V-pits side walls The barrier height of hole blocking layer 109 500 meV at least high compared with the barrier height of the second nitride-based semiconductor 110.
As shown in figure 4, first nitride-based semiconductor 108 and second nitridation of the MQW without V-pits overlying regions Thing semiconductor 110 is the barrier layer or well layer of MQW, the side wall electronic barrier layer 107 of the V-pits side walls and V-pits sides The height of wall hole blocking layer 109 is not less than the height of MQW.
The material of the V-pits side walls electronic barrier layer 107 is AlxGa1-xOr AlxGa1-x/ GaN superlattices, the quantum The material of first nitride-based semiconductor of the trap without V-pits overlying regions is AlyGa1-yOr AlyGa1-y/ GaN, and 1 >=x >=0,1 >= Y >=0, x and y must are fulfilled for (y-x) Eg（GaN）+（x-y）Eg（AlN）- b [x (1-x)-y (1-y)] >=0.5, wherein b are for bending Number, 5 >=b >=1.
The material of the V-pits side walls hole blocking layer 109 is AlmGa1-mOr AlmGa1-m/ GaN superlattices, the quantum The material of second nitride-based semiconductor of the trap without V-pits overlying regions is AlnGa1-nOr AlnGa1-n/ GaN, and 1 >=m >=0,1 >= N >=0, m and n must are fulfilled for (n-m) Eg（GaN）+（m-n）Eg（AlN）- b [m (1-m)-n (1-n)] >=0.5, wherein b are for bending Number, 5 >=b >=1.
The barrier height of the V-pits side walls electronic barrier layer 107 is compared with first nitrogen of the SQW without V-pits overlying regions At least high 500 meV of the barrier height of compound semiconductor 108, makes the electronics of injection SQW can not cross V-pits side wall electronics The potential barrier on barrier layer 107, electronics lift the electron injection efficiency of SQW along c-axis vertical transport.
The barrier height of the V-pits side walls hole blocking layer 109 is compared with second nitrogen of the SQW without V-pits overlying regions At least high 500 meV of the barrier height of compound semiconductor 110, makes the hole of injection SQW can not cross V-pits side walls hole The potential barrier on barrier layer 109, hole lift the hole injection efficiency of SQW along c-axis vertical transport.
The barrier layer that the V-pits side walls electronic barrier layer 107 and V-pits side walls hole blocking layer 109 are formed is formed High potential barrier, stop that electronics and hole transport toward V-pits centers, prevent from absorbing the non-spoke of generation by the threading dislocation of V-pits bottoms Penetrate compound, lift electronics and hole in the vertical transport along c-axis without V-pits regions, make electronics and hole mainly along without V- Pits zone-transports, lift electronics and injection and the combined efficiency in hole.
V-pits closing packed layers 111 material is the nitridation of the IIIs such as undoped GaN or AlGaN or AlInGaN Thing, lateral growth speed is lifted by V-pits closure of openings by high-temperature low-pressure method, meanwhile, V- is formed by non-impurity-doped Pits high resistance area, further stop that hole transports toward V-pits center, reduces non-radiative recombination.
Embodiment 3
As shown in figure 5, it is with the difference of embodiment 1, first nitride of the MQW without V-pits overlying regions half The nitride-based semiconductor 110 of conductor 108 and second is the barrier layer or well layer of MQW, and the V-pits side walls only have a V- Pits side walls electronic barrier layer 107, and its height is not less than the height of MQW, the V-pits side walls electronic barrier layer 107 form high potential barriers, and its barrier height stops electronics toward in V-pits higher than the well layer of MQW and the barrier height of barrier layer The heart transports, and electronics mainly along without V-pits zone-transports, is prevented non-radiative by the threading dislocation absorption generation of V-pits bottoms It is compound, electronics and hole are lifted in the vertical transport along c-axis without V-pits regions, lift the injection of electronics and hole and compound Efficiency.
Embodiment 4
As shown in fig. 6, it is with the difference of embodiment 1, first nitride of the MQW without V-pits overlying regions half The nitride-based semiconductor 110 of conductor 108 and second is the barrier layer or well layer of MQW, and the V-pits side walls only have a V- Pits side walls hole blocking layer 109, and its height is not less than the height of MQW, the V-pits side walls hole blocking layer 109 form high potential barriers, and its barrier height stops hole toward in V-pits higher than the well layer of MQW and the barrier height of barrier layer The heart transports, and hole mainly along without V-pits zone-transports, is prevented non-radiative by the threading dislocation absorption generation of V-pits bottoms It is compound, electronics and hole are lifted in the vertical transport along c-axis without V-pits regions, lift the injection of electronics and hole and compound Efficiency.
Embodiment of above is merely to illustrate the present invention, and is not intended to limit the present invention, those skilled in the art, In the case of not departing from the spirit and scope of the present invention, various modifications and variation can be made to the present invention, thus it is all equivalent Technical scheme fall within scope of the invention, scope of patent protection of the invention should regard Claims scope and limit.

Claims (11)

1. a kind of nitride semiconductor LED, including：N-type nitride-based semiconductor, MQW, p-type nitride are partly led Body；The MQW has V-pits；The side wall of the V-pits has V-pits side wall barrier layers.
A kind of 2. nitride semiconductor LED according to claim 1, it is characterised in that：The V-pits side walls Barrier layer includes the combination of V-pits side walls electronic barrier layer and V-pits side wall hole blocking layers.
A kind of 3. nitride semiconductor LED according to claim 1 or 2, it is characterised in that：The Multiple-quantum Top of the trap without V-pits regions has the first nitride-based semiconductor and the second nitride-based semiconductor.
A kind of 4. nitride semiconductor LED according to claim 3, it is characterised in that：The V-pits side walls The barrier height of electronic barrier layer is more than the barrier height of first nitride-based semiconductor of the MQW without V-pits overlying regions, The barrier height of the V-pits side walls hole blocking layer is more than second nitride of the MQW without V-pits overlying regions half The barrier height of conductor.
A kind of 5. nitride semiconductor LED according to claim 4, it is characterised in that：The V-pits side walls The barrier height of first nitride-based semiconductor of the more SQW of barrier height without V-pits overlying regions of electronic barrier layer is extremely Few high 500 meV, the barrier height of the V-pits side walls hole blocking layer is compared with second of SQW without V-pits overlying regions At least high 500 meV of the barrier height of nitride-based semiconductor.
A kind of 6. nitride semiconductor LED according to claim 2, it is characterised in that：The V-pits side walls The material of electronic barrier layer is AlxGa1-xOr AlxGa1-x/ GaN superlattices.
A kind of 7. nitride semiconductor LED according to claim 2, it is characterised in that：The V-pits side walls The material of hole blocking layer is AlmGa1-mOr AlmGa1-m/ GaN superlattices.
A kind of 8. nitride semiconductor LED according to claim 3, it is characterised in that：The SQW is without V- The material of first nitride-based semiconductor of pits overlying regions is AlyGa1-yOr AlyGa1-y/ GaN, and 1 >=x >=0,1 >=y >=0, x (y-x) E must is fulfilled for yg（GaN）+（x-y）Eg（AlN）- b [x (1-x)-y (1-y)] >=0.5, wherein b are bending coefficient, 5 >=b ≥1。
A kind of 9. nitride semiconductor LED according to claim 3, it is characterised in that：The SQW is without V- The material of second nitride-based semiconductor of pits overlying regions is AlnGa1-nOr AlnGa1-n/ GaN, and 1 >=m >=0,1 >=n >=0, m (n-m) E must is fulfilled for ng（GaN）+（m-n）Eg（AlN）- b [m (1-m)-n (1-n)] >=0.5, wherein b are bending coefficient, 5 >=b ≥1。
A kind of 10. nitride semiconductor LED according to claim 2, it is characterised in that：The V-pits sides The V-pits side wall barrier layers that wall electronic barrier layer and V-pits side walls hole blocking layer are formed form high potential barrier, stop electronics and Hole transports toward V-pits centers, prevent by V-pits bottoms threading dislocation absorb produce non-radiative recombination, lifting electronics and Hole lifts electronics and injection and the combined efficiency in hole in the vertical transport along c-axis without V-pits regions.
A kind of 11. nitride semiconductor LED according to claim 1 or 2, it is characterised in that：The V-pits Top has V-pits closing packed layers, and the closing filling layer material is undoped GaN or AlGaN or AlInGaN, is led to Cross high temperature low pressure method and lift lateral growth speed by V-pits closure of openings, meanwhile, form V-pits's by non-impurity-doped High resistance area, further stop that hole transports toward V-pits center, reduces non-radiative recombination.
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CN108520913A (en) * 2018-04-25 2018-09-11 黎明职业大学 A kind of nitride semiconductor LED with strong polarization hole injection layer
CN108598225A (en) * 2018-04-25 2018-09-28 黎明职业大学 A kind of nitride-based semiconductor white light emitting diode

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