CN107833901A - Back side illumination image sensor and forming method thereof - Google Patents
Back side illumination image sensor and forming method thereof Download PDFInfo
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- CN107833901A CN107833901A CN201711096113.6A CN201711096113A CN107833901A CN 107833901 A CN107833901 A CN 107833901A CN 201711096113 A CN201711096113 A CN 201711096113A CN 107833901 A CN107833901 A CN 107833901A
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- 238000005286 illumination Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 90
- 238000007639 printing Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 31
- 239000004793 Polystyrene Substances 0.000 claims description 18
- PHSPGYBCROSJTD-UHFFFAOYSA-N ethanol;terephthalic acid Chemical compound CCO.OC(=O)C1=CC=C(C(O)=O)C=C1 PHSPGYBCROSJTD-UHFFFAOYSA-N 0.000 claims description 18
- 239000004417 polycarbonate Substances 0.000 claims description 18
- 229920000515 polycarbonate Polymers 0.000 claims description 18
- 229920002223 polystyrene Polymers 0.000 claims description 18
- 229920005479 Lucite® Polymers 0.000 claims description 15
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 15
- 108091008695 photoreceptors Proteins 0.000 claims description 5
- 238000009738 saturating Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims 4
- 238000001914 filtration Methods 0.000 claims 2
- 238000003384 imaging method Methods 0.000 abstract description 17
- 235000012431 wafers Nutrition 0.000 description 110
- 238000005530 etching Methods 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
A kind of back side illumination image sensor and forming method thereof, back side illumination image sensor includes：Wafer main body, wafer main body include the main body back side, and wafer main body includes pixel unit area, and pixel unit area includes the firstth area and the secondth area；The first sensor devices in the area of wafer main body first；The first groove in the area of wafer main body first, the opening of the first groove is towards the main body back side；The first photic zone in the first groove, and the minimum range of the first photic zone to the first sensor devices is more than zero；The second sensor devices in the area of wafer main body second；Positioned at the blue optical filter of the first printing opacity layer surface；Red optical filter positioned at the second area main body back side.The imaging degree of crosstalk of the back side illumination image sensor reduces.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of back side illumination image sensor and forming method thereof.
Background technology
Imaging sensor is a kind of semiconductor devices for converting optical signal into electric signal.Imaging sensor is divided into complementary gold
Belong to oxide (CMOS) imaging sensor and charge coupling device (CCD) imaging sensor.Cmos image sensor has technique
Simply, it is easy to integrated other devices, small volume, in light weight, small power consumption and low cost and other advantages.Therefore, with image sensing skill
The development of art, cmos image sensor substitute ccd image sensor to be applied in each electronic product more and more.At present,
Cmos image sensor has been widely used for static digital camera, DV, medical camera device and automobile-used shooting
Device etc..
Cmos image sensor includes preceding illuminated (FSI) imaging sensor and back-illuminated type (BSI) imaging sensor.In back-illuminated
In formula imaging sensor, light from the back surface incident of imaging sensor to imaging sensor in light sensitive diode on, so as to by light
Electric energy can be converted into.
However, the performance of existing back side illumination image sensor has much room for improvement.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of back side illumination image sensor and forming method thereof, to reduce back-illuminated type figure
As the imaging crosstalk of sensor.
To solve the above problems, the present invention provides a kind of forming method of back side illumination image sensor, including：Wafer master
Body, wafer main body include the main body back side, and wafer main body includes pixel unit area, and pixel unit area includes the firstth area and the secondth area；
The first sensor devices in the area of wafer main body first；The first groove in the area of wafer main body first, the opening of the first groove
Towards the main body back side；The first photic zone in the first groove, and the minimum range of the first photic zone to the first sensor devices is big
In zero；The second sensor devices in the area of wafer main body second；Positioned at the blue optical filter of the first printing opacity layer surface；Positioned at second
The red optical filter at the area main body back side.
Optionally, the described first euphotic material is lucite, polycarbonate, polystyrene or poly terephthalic acid
Ethanol resin.
Optionally, pixel unit area also includes：3rd area；The back side illumination image sensor also includes：Positioned at wafer master
The 3rd sensor devices in the area of body the 3rd；The 3rd groove in the area of wafer main body the 3rd, the opening of the 3rd groove are carried on the back towards main body
Face；The 3rd photic zone in the 3rd groove, and the minimum range of the 3rd photic zone to the 3rd sensor devices is more than zero；Positioned at
The green optical filter of three printing opacity layer surfaces.
Optionally, thickness of first photic zone in the normal direction of the main body back side is more than the 3rd photic zone and carried on the back in main body
Thickness in the normal direction of face；The minimum range of first photic zone to the first sensor devices is less than the 3rd photic zone to the 3rd
The minimum range of sensor devices.
Optionally, in addition to：The second groove in the area of wafer main body second, the opening of the second groove is towards the main body back side；
The second photic zone in the second groove, and the minimum range of the second photic zone to the second sensor devices is more than zero；Second printing opacity
Thickness of the layer in the normal direction of the main body back side, less than thickness of first photic zone in the normal direction of the main body back side and less than the
Thickness of three photic zones in the normal direction of the main body back side；The minimum range of first photic zone to the first sensor devices is less than second
Photic zone to the second sensor devices minimum range；The minimum range of 3rd photic zone to the 3rd sensor devices is less than the second printing opacity
Layer to the second sensor devices minimum range；The red optical filter is located at the second printing opacity layer surface.
Optionally, the described second euphotic material is lucite, polycarbonate, polystyrene or poly terephthalic acid
Ethanol resin；The 3rd euphotic material is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol tree
Ester.
The present invention also provides a kind of forming method of back side illumination image sensor, including：Wafer main body, wafer main body are provided
Including the main body back side, wafer main body includes pixel unit area, and pixel unit area includes the firstth area and the secondth area, wafer main body first
There are the first sensor devices in area, there are the second sensor devices in the area of wafer main body second；Formed in the area of wafer main body first
First groove, and the main body back side exposes the first groove；Form the first photic zone of full first groove of filling；In the first printing opacity layer surface shape
Into blue optical filter；After forming the first photic zone, the red optical filter positioned at the second area main body back side is formed.
Optionally, the described first euphotic material is lucite, polycarbonate, polystyrene or poly terephthalic acid
Ethanol resin.
Optionally, pixel unit area also includes：3rd area；There are the 3rd sensor devices in the area of wafer main body the 3rd；
The forming method of the back side illumination image sensor also includes：Before blue optical filter and red optical filter is formed, in wafer main body
The 3rd groove is formed in 3rd area, and the main body back side exposes the 3rd groove；Form the 3rd photic zone of full 3rd groove of filling；Form the
After three photic zones, the blue optical filter and red optical filter are formed；Green optical filter is formed in the 3rd printing opacity layer surface.
Optionally, thickness of first photic zone in the normal direction of the main body back side is more than the 3rd photic zone and carried on the back in main body
Thickness in the normal direction of face；The minimum range of first photic zone to the first sensor devices is less than the 3rd photic zone to the 3rd
The minimum range of sensor devices.
Optionally, in addition to：Before red optical filter, the first photic zone and the 3rd photic zone is formed, in wafer main body the
The second groove is formed in 2nd area, and the main body back side exposes the second groove；Form the second photic zone of full second groove of filling；Form second
After photic zone, the blue optical filter and green optical filter are formed；The red optical filter is formed in the second printing opacity layer surface；Second printing opacity
Thickness of the layer in the normal direction of the main body back side, less than thickness of first photic zone in the normal direction of the main body back side and less than the
Thickness of three photic zones in the normal direction of the main body back side；The minimum range of first photic zone to the first sensor devices is less than second
Photic zone to the second sensor devices minimum range；The minimum range of 3rd photic zone to the 3rd sensor devices is less than the second printing opacity
Layer to the second sensor devices minimum range.
Optionally, the described second euphotic material is lucite, polycarbonate, polystyrene or poly terephthalic acid
Ethanol resin；The 3rd euphotic material is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol tree
Ester.
Optionally, during first groove is formed, second groove and the 3rd groove are formed；Or formed
After first groove, the second groove is formed；After forming the second groove, the 3rd groove is formed.
Compared with prior art, technical scheme has advantages below：
In the back side illumination image sensor that technical solution of the present invention provides, between blue optical filter and the first sensor devices
There is the first photic zone in wafer main body.Absorption of the first printing opacity layer material to blue light, than the first photic zone and the first photoreceptor
Absorption of the wafer material of main part to blue light between part is lacked, and mainly feels by the blue light of blue optical filter in the first photic zone and first
Excited in wafer material of main part between optical device.The position for so causing the blue light by blue optical filter to be excited in wafer main body
Put the closer to the distance of the sensor devices of distance first, thus blue light be excited after caused light induced electron collected by the first sensor devices
Probability increase, the probability reduction that the light induced electron of blue light is collected by the second sensor devices.Therefore, back side illumination image biography is reduced
The imaging crosstalk of sensor.
Secondly as the sensor devices of positional distance first excited by the blue light of blue optical filter in wafer main body away from
It is shorter from the path that relatively closely, the light induced electron of blue light is passed through by the first sensor devices collection needs, therefore the light induced electron of blue light
Smaller with the probability of hole-recombination, accordingly, the light induced electron that the first sensor devices are collected is more, thus improves back-illuminated type figure
As the quantum efficiency of sensor.
Further, there is the 3rd photic zone in the wafer main body between green optical filter and the 3rd sensor devices.3rd is saturating
Absorption of the photosphere material to green glow, than absorption of the wafer material of main part between the 3rd photic zone and the 3rd sensor devices to blue light
It is few, mainly excited by the green glow of green optical filter in the wafer material of main part between the 3rd photic zone and the 3rd sensor devices.
So cause by green optical filter the sensor devices of positional distance the 3rd that are excited in wafer main body of green glow it is closer to the distance, because
The probability that caused light induced electron is collected by the 3rd sensor devices after the being excited increase of this green glow, the light induced electron of green glow is by second
The probability that sensor devices and the first sensor devices are collected reduces.Therefore, it reduce further the imaging of back side illumination image sensor
Crosstalk.
Secondly as the sensor devices of positional distance the 3rd excited by the green glow of green optical filter in wafer main body away from
It is shorter from the path that relatively closely, the light induced electron of green glow is passed through by the 3rd sensor devices collection needs, therefore the light induced electron of green glow
Smaller with the probability of hole-recombination, accordingly, the light induced electron that the 3rd sensor devices are collected is more, thus improves back-illuminated type figure
As the quantum efficiency of sensor.
Further, thickness of first photic zone in the normal direction of the main body back side is more than the 3rd photic zone and carried on the back in main body
Thickness in the normal direction of face；The minimum range of first photic zone to the first sensor devices is less than the 3rd photic zone to the 3rd photosensitive
The minimum range of device.Benefit includes：Meet the positional distance first excited by the blue light of blue optical filter in wafer main body
Sensor devices are nearer, and the sensor devices of positional distance the 3rd that the green glow for passing through green optical filter excites in wafer main body are nearer；
Avoid being perforated through the 3rd sensor devices by green optical filter and the 3rd euphotic green glow.
Further, there is the second photic zone in the wafer main body between red optical filter and the second sensor devices.Second is saturating
Thickness of the photosphere in the normal direction of the main body back side, less than thickness of first photic zone in the normal direction of the main body back side and it is less than
Thickness of 3rd photic zone in the normal direction of the main body back side.Benefit includes：Avoid euphotic by red optical filter and second
Feux rouges is perforated through the second sensor devices, meanwhile, the appropriate integral thickness for increasing back side illumination image sensor part, beneficial to follow-up encapsulation
The progress of technique.
It is photosensitive in blue optical filter and first in the forming method for the back side illumination image sensor that technical solution of the present invention provides
The first photic zone is formed in wafer main body between device.By the position that the blue light of blue optical filter excites in wafer main body away from
It is closer to the distance from the first sensor devices, thus blue light be excited after caused light induced electron collected by the first sensor devices it is several
Rate increase, the probability that the light induced electron of blue light is collected by the second sensor devices reduce.Reduce back side illumination image sensor into
As crosstalk.
Brief description of the drawings
Fig. 1 is a kind of structural representation of back side illumination image sensor；
Fig. 2 to Fig. 5 is the structural representation of back side illumination image sensor forming process in one embodiment of the invention.
Embodiment
As described in background, the poor-performing for the back side illumination image sensor that prior art is formed.
A kind of back side illumination image sensor, with reference to figure 1, including：Wafer main body 100, wafer main body 100 are carried on the back including main body
Face, wafer main body 100 include some pixel unit areas, and each pixel unit area includes the first area A, the second area B and the 3rd area C；Position
The first sensor devices 111 in the area A of wafer main body 100 first；The second photoreceptor in the area B of wafer main body 100 second
Part 112；The 3rd sensor devices 113 in the area C of wafer main body 100 the 3rd；Positioned at the blue optical filter of wafer body surfaces
121st, red optical filter 122 and green optical filter 123, and blue optical filter 121 is located at the first area A main body back side, red optical filter 122
In the second area B main body back side, green optical filter 123 is located at the 3rd area C main body back side.
The forming process of wafer main body 100 includes：Device wafers, the first sensor devices 111, the second sensor devices are provided
112 and the 3rd sensor devices 113 be located in device wafers；Carrying wafer is provided；The front for carrying wafer and device wafers is entered
Line unit is closed, and afterwards, device wafers are thinned from the back side of device wafers, forms wafer main body 100.
In order to meet the requirement of the gross thickness thinning of wafer main body 100, usual first sensor devices 111, the second photoreceptor
The sensor devices 113 of part 112 and the 3rd lie substantially in same depth in the position of device wafers.Accordingly, in wafer main body 100
In, the first sensor devices 111, the second sensor devices 112 and distance of the 3rd sensor devices 113 to the main body back side are basically identical.
The wavelength of the wavelength ratio feux rouges of blue light is short, and the material of wafer main body 100 is more than to the probability of blue light absorption to be inhaled to feux rouges
The probability of receipts, thus it is smaller in the incident depth of wafer main body 100 by the blue light of blue optical filter, by the blue light of blue optical filter
The position excited in wafer main body 100, the position than being excited by the feux rouges of red optical filter in wafer main body 100 is shallow, tool
Body, mainly generate light induced electron being excited close to the region at the main body back side by the blue light of blue optical filter.So cause through
The distant of the first sensor devices of positional distance 111 that the blue light of blue optical filter excites in wafer main body 100 is crossed, so,
The light induced electron of greater number of blue light is collected by the second sensor devices 112 and the 3rd sensor devices 113.
Based on the reason for similar, the light induced electron of green glow has part can be by the first sensor devices 111 and the second sensor devices
112 collect.
To sum up, cause the imaging of back side illumination image sensor that crosstalk occurs.
On this basis, the present invention provides a kind of forming method of back side illumination image sensor, in blue optical filter and first
A photic zone is formed in wafer main body between sensor devices.So that excited by the blue light of blue optical filter in wafer main body
The sensor devices of positional distance first it is closer to the distance, therefore blue light be excited after caused light induced electron received by the first sensor devices
The probability increase of collection, the probability that the light induced electron of blue light is collected by the second sensor devices reduce.Therefore, back side illumination image is reduced
The imaging crosstalk of sensor.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 2 to Fig. 5 is the structural representation of back side illumination image sensor forming process in one embodiment of the invention.
With reference to figure 2, there is provided wafer main body 200, wafer main body 200 include the main body back side 201, and wafer main body 200 includes picture
Plain cellular zone, pixel unit area include the first area X and the second area Y, have the first sensor devices in the area X of wafer main body 200 first
There are the second sensor devices 212 in 211, the area Y of wafer main body 200 second.
Wafer main body 200 includes some pixel unit areas.
Pixel unit area also includes：3rd area Z.
There are the 3rd sensor devices 213 in the area Z of wafer main body 200 the 3rd.
First sensor devices 211, the second sensor devices 212 and the 3rd sensor devices 213 are photodiode.
Forming the method for wafer main body 200 includes：Device wafers are provided, device wafers have the relative device back side and device
Part is positive, has the first sensor devices 211, the second sensor devices 212 and the 3rd sensor devices 213 in device wafers；Offer is held
Carry wafer；Together with by the devices of device wafers front and carrying wafer bonding；The device front of device wafers and carrying is brilliant
After round key is combined, from device thinning back side device wafers, wafer main body 200 is formed, the device back side of device wafers is formed
The main body back side 201 of wafer main body 200.
In order to meet the requirement of the gross thickness thinning of wafer main body 200, usual first sensor devices 211, the second photoreceptor
The sensor devices 213 of part 212 and the 3rd lie substantially in same depth in the position of device wafers.Accordingly, in wafer main body 200
In, the distance basic one of the first sensor devices 211, the second sensor devices 212 and the 3rd sensor devices 213 to the main body back side 201
Cause.
With reference to figure 3, the first groove 221 is formed in the area X of wafer main body 201 first, and the main body back side 201 exposes the first groove
221。
The forming method of the back side illumination image sensor also includes：The 3rd groove is formed in the area Z of wafer main body 201 the 3rd
223, and the main body back side 201 exposes the 3rd groove 223.
In this implementation, the forming method of the back side illumination image sensor also includes：In the area Y of wafer main body 201 second
The second groove 222 is formed, and the main body back side 201 exposes the second groove 222.In other embodiments, the second groove is not formed, accordingly
, do not form the second photic zone subsequently yet.
In the present embodiment, during the first groove 221 is formed, the second groove 222 and the 3rd groove 223 are formed, simplifies work
Skill, reduce etching cost.Specifically, the step of forming the first groove 211 includes：Using first time etching technics, carried on the back from main body
Face 201 etches the area X of wafer main body 201 first；After carrying out first time etching technics, using second of etching technics from the main body back side
The area X of 201 etching wafer main body 201 first；After carrying out second of etching technics, using third time etching technics from the main body back side
The area X of 201 etching wafer main body 201 first；First time etching technics has also etched wafer main body 201 second from the main body back side 201
Area Y and the 3rd area Y, second of etching technics have also etched the area Y of wafer main body 201 the 3rd from the main body back side 201；Second groove 222
Formed by the area Y of first time etching technics etching wafer main body 201 second, the 3rd groove 223 is by first time etching technics and second
Secondary etching technics has etched the area Y of wafer main body 201 the 3rd and formed.
In other embodiments, after forming first groove, the second groove is formed；After forming the second groove, the 3rd groove is formed.
When forming the second groove 222, the depth of the first groove 221 is more than the depth of the second groove 222, the depth of the 3rd groove 223
More than the depth of the second groove 222.
In the present embodiment, the depth of the first groove 221 is more than the depth of the 3rd groove 223.In other embodiments, first groove
Depth is less than or equal to the depth of the 3rd groove.
With reference to figure 4, the first photic zone 231 for filling full first groove 221 (with reference to figure 3) is formed.
In the present embodiment, in addition to：Form the 3rd photic zone 233 of full 3rd groove 223 (with reference to figure 3) of filling；Formation is filled out
The second photic zone 232 full of the second groove 222 (with reference to figure 3).
The material of first photic zone 231 is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol
Resin；The material of second photic zone 232 is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol resin；The
The material of three photic zones 233 is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol resin.
The surface of first photic zone 231 flushes with the main body back side 201, or the surface of the first photic zone 231 is slightly above
The main body back side 201.The surface of second photic zone 232 flushes with the main body back side 201, or the surface of the second photic zone 232 is slightly above
The main body back side 201.The surface of 3rd photic zone 233 flushes with the main body back side 201, or the surface of the 3rd photic zone 233 is slightly above
The main body back side 201.
In the present embodiment, flushed with the surface of first photic zone 231 with the main body back side 201, the second photic zone 232
Surface is flushed with the main body back side 201, and the surface of the 3rd photic zone 233 flushes with the main body back side 201 to be illustrated for example.
In the present embodiment, thickness of first photic zone 231 in the normal direction of the main body back side 201 is more than the 3rd printing opacity
233 thickness in the normal direction of the main body back side 201 of layer, accordingly, the sensor devices 211 of the first photic zone 231 to the first are most
Small distance is less than the minimum range of the sensor devices 213 of the 3rd photic zone 233 to the 3rd.Benefit includes：Meet to pass through blue optical filter
The sensor devices of positional distance first that are excited in wafer main body of blue light it is nearer, and by green optical filter green glow in wafer master
The sensor devices of positional distance the 3rd excited in body are nearer；Avoid being perforated through by green optical filter and the 3rd euphotic green glow
Three sensor devices.
In other embodiments, thickness of first photic zone in the normal direction of the main body back side is less than or equal to the 3rd
Thickness of the photic zone in the normal direction of the main body back side.
In the present embodiment, thickness of second photic zone 232 in the normal direction of the main body back side 201, less than the first photic zone
231 thickness in the normal direction of the main body back side 201 and less than the 3rd photic zone 233 in the normal direction of the main body back side 201
Thickness；Accordingly, the minimum range of the sensor devices 211 of the first photic zone 231 to the first is felt less than the second photic zone 232 to the second
The minimum range of optical device 212, the minimum range of the sensor devices 213 of the 3rd photic zone 233 to the 3rd are less than the second photic zone 232
To the minimum range of the second sensor devices 212.Benefit includes：Avoid being perforated through by red optical filter and the second euphotic feux rouges
Second sensor devices, meanwhile, the appropriate integral thickness for increasing back side illumination image sensor part, beneficial to entering for subsequent encapsulating process
OK.
In the present embodiment, the minimum range of the sensor devices 211 of the first photic zone 231 to the first is 0.12um~1.0um, the
The minimum range of the sensor devices 213 of three photic zone 233 to the 3rd is 0.32um~1.0um, and the second photic zone 232 to the second is photosensitive
Minimum range 0.5um~1.5um of device 212.
In the present embodiment, the minimum range of the sensor devices 211 of the first photic zone 231 to the first refers to：First photic zone
231 edges to the Edge Distance of the first sensor devices 211 minimum value；The sensor devices 212 of second photic zone 232 to the second are most
Small distance refers to：The edge of second photic zone 232 to the Edge Distance of the second sensor devices 212 minimum value；3rd photic zone
The minimum range of 233 to the 3rd sensor devices 213 refers to：The edge of 3rd photic zone 233 to the edge of the 3rd sensor devices 213
The minimum value of distance.
With reference to figure 5, blue optical filter 241 is formed on the surface of the first photic zone 231；Formed on the surface of the 3rd photic zone 233 green
Optical filter 243；The red optical filter 242 is formed on the surface of the second photic zone 232.
In the present embodiment, the second photic zone 232 is formd, accordingly, the red filter is formed on the surface of the second photic zone 232
Mating plate 242.In other embodiments, the second photic zone is not formed, forms the red optical filter positioned at the second area main body back side.
In other embodiments, when not forming the second photic zone, the most narrow spacing of the first photic zone to the first sensor devices
From the minimum range less than red optical filter to the second sensor devices, the minimum range of the 3rd photic zone to the 3rd sensor devices is less than
Red optical filter to the second sensor devices minimum range.
In the present embodiment, in addition to：The first poly- lens are formed on the surface of the first photic zone 231；In the table of the second photic zone 232
Face forms the second poly- lens；Trimerization lens are formed on the surface of the 3rd photic zone 233.
In the present embodiment, have first in the wafer main body 200 between the blue sensor devices 211 of optical filter 241 and first
Photic zone 231.Absorption of the material of first photic zone 231 to blue light, than between the first photic zone 231 and the first sensor devices 211
Absorption of the material of wafer main body 200 to blue light lack, by the blue light of blue optical filter mainly in the first photic zone 231 and the first sense
Excited in the material of wafer main body 200 between optical device 211.So cause the blue light by blue optical filter in wafer main body 200
In excite the first sensor devices of positional distance 211 it is closer to the distance, therefore blue light be excited after caused light induced electron by
The probability increase that one sensor devices 211 are collected, the light induced electron of blue light is by the second sensor devices 212 and the 3rd sensor devices 213
The probability of collection reduces.Therefore, the imaging crosstalk of back side illumination image sensor is reduced.
Secondly as the first sensor devices of positional distance 211 excited by the light of blue optical filter in wafer main body 200
It is closer to the distance, the light induced electron of blue light is collected by the first sensor devices 211 needs the path passed through shorter, therefore the light of blue light
Raw electronics and the probability of hole-recombination are smaller, and accordingly, the light induced electron that the first sensor devices 211 are collected is more, thus improves
The quantum efficiency of back side illumination image sensor.
Further, there is the 3rd printing opacity in the wafer main body 200 between the green sensor devices 213 of optical filter 243 and the 3rd
Layer 233.Absorption of the material of 3rd photic zone 233 to green glow, than the crystalline substance between the 3rd photic zone 233 and the 3rd sensor devices 213
Absorption of the circle material of main body 200 to green glow is lacked, by the green glow of green optical filter 243 mainly in the 3rd photic zone 233 and the 3rd sense
Excited in the material of wafer main body 200 between optical device 213.So cause the green glow by green optical filter 243 in wafer main body
The sensor devices 213 of positional distance the 3rd excited in 200 it is closer to the distance, therefore green glow be excited after caused light induced electron quilt
The probability increase that 3rd sensor devices 213 are collected, the light induced electron of green glow is by the second sensor devices 212 and the first sensor devices
211 probabilities collected reduce.Therefore, it reduce further the imaging crosstalk of back side illumination image sensor.
Secondly as the sensor devices of positional distance the 3rd excited by the light of green optical filter 243 in wafer main body 200
213 it is closer to the distance, the light induced electron of green glow is collected by the 3rd sensor devices 213 needs the path passed through shorter, therefore green glow
Light induced electron and hole-recombination probability it is smaller, accordingly, the 3rd sensor devices 213 collect light induced electron it is more, thus
Improve the quantum efficiency of back side illumination image sensor.
The present invention also provides a kind of back side illumination image sensor formed using the above method, refer to Fig. 5, including：It is brilliant
Circle main body 200, wafer main body 200 include the main body back side 201, and wafer main body 200 includes pixel unit area, each pixel unit area bag
Include the first area X and the second area Y；The first sensor devices 211 in the area X of wafer main body 200 first；Positioned at wafer main body 200
The first groove 221 (with reference to figure 3) in first area X, the opening of the first groove 221 is towards the main body back side 201；In the first groove 221
The first photic zone 231, and the minimum range of the sensor devices 211 of the first photic zone 231 to the first be more than zero；Positioned at wafer main body
The second sensor devices 212 in 200 second area Y；Blue optical filter 241 positioned at the surface of the first photic zone 231；Positioned at the second area Y
The red optical filter 242 at the main body back side 201.
The material of first photic zone 231 is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol
Resin.
Pixel unit area also includes：3rd area Z.
The back side illumination image sensor also includes：The 3rd sensor devices 213 in the area Z of wafer main body 200 the 3rd；
The 3rd groove 223 (with reference to figure 3) in the area Z of wafer main body 200 the 3rd, the opening of the 3rd groove 223 is towards the main body back side 201；Position
The 3rd photic zone 233 in the 3rd groove 223, and the minimum range of the sensor devices 213 of the 3rd photic zone 233 to the 3rd is more than
Zero；Green optical filter 243 positioned at the surface of the 3rd photic zone 233.
Thickness of first photic zone 231 in the normal direction of the main body back side 201 is more than the 3rd photic zone 233 in main body
Thickness in the normal direction of the back side 201；The minimum range of the sensor devices 211 of first photic zone 231 to the first is less than the 3rd printing opacity
The minimum range of 233 to the 3rd sensor devices 213 of layer.
The back side illumination image sensor also includes：(the reference chart of the second groove 222 in the area Y of wafer main body 200 second
3), the opening of the second groove 222 is towards the main body back side 201；The second photic zone 232 in the second groove 222, and the second photic zone
The minimum range of 232 to the second sensor devices 212 is more than zero；Thickness of second photic zone 232 in the normal direction of the main body back side 201
Degree, carried on the back less than thickness of first photic zone 231 in the normal direction of the main body back side 201 and less than the 3rd photic zone 233 in main body
Thickness in the normal direction of face 201；The minimum range of the sensor devices 211 of first photic zone 231 to the first is less than the second photic zone
The minimum range of 232 to the second sensor devices 212；The minimum range of 3rd photic zone 233 to the 3rd sensor devices 213 is less than the
The minimum range of the sensor devices 212 of two photic zone 232 to the second；The red optical filter 242 is located at the surface of the second photic zone 232.
In other embodiments, the back side illumination image sensor does not include the second groove and the second photic zone, accordingly, red
Optical filter is located at the second area main body back side.
When the back side illumination image sensor does not include the second groove and the second photic zone, the first photic zone is to first photosensitive
The minimum range of device is less than red optical filter to the minimum range of the second sensor devices, the 3rd photic zone to the 3rd sensor devices
Minimum range is less than red optical filter to the minimum range of the second sensor devices.
The material of second photic zone 232 is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol
Resin.The material of 3rd photic zone 233 is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol tree
Ester.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (13)
- A kind of 1. back side illumination image sensor, it is characterised in that including：Wafer main body, wafer main body include the main body back side, and wafer main body includes pixel unit area, and pixel unit area includes the firstth area With the secondth area；The first sensor devices in the area of wafer main body first；The first groove in the area of wafer main body first, the opening of the first groove is towards the main body back side；The first photic zone in the first groove, and the minimum range of the first photic zone to the first sensor devices is more than zero；The second sensor devices in the area of wafer main body second；Positioned at the blue optical filter of the first printing opacity layer surface；Red optical filter positioned at the second area main body back side.
- 2. back side illumination image sensor according to claim 1, it is characterised in that the first euphotic material is to have Machine glass, polycarbonate, polystyrene or poly terephthalic acid ethanol resin.
- 3. back side illumination image sensor according to claim 1, it is characterised in that pixel unit area also includes：3rd area；The back side illumination image sensor also includes：The 3rd sensor devices in the area of wafer main body the 3rd；The 3rd groove in the area of wafer main body the 3rd, the opening of the 3rd groove is towards the main body back side；The 3rd in the 3rd groove Photic zone, and the minimum range of the 3rd photic zone to the 3rd sensor devices is more than zero；Positioned at the green optical filtering of the 3rd printing opacity layer surface Piece.
- 4. back side illumination image sensor according to claim 3, it is characterised in that first photic zone is at the main body back side Thickness in normal direction is more than thickness of the 3rd photic zone in the normal direction of the main body back side；First photic zone is to first The minimum range of sensor devices is less than the minimum range of the 3rd photic zone to the 3rd sensor devices.
- 5. the back side illumination image sensor according to claim 3 or 4, it is characterised in that also include：Positioned at wafer main body The second groove in 2nd area, the opening of the second groove is towards the main body back side；The second photic zone in the second groove, and the second photic zone Minimum range to the second sensor devices is more than zero；Thickness of second photic zone in the normal direction of the main body back side, less than first Thickness of the photic zone in the normal direction of the main body back side and it is less than thickness of the 3rd photic zone in the normal direction of the main body back side；The The minimum range of one photic zone to the first sensor devices is less than the minimum range of the second photic zone to the second sensor devices；3rd is saturating The minimum range of photosphere to the 3rd sensor devices is less than the minimum range of the second photic zone to the second sensor devices；The red optical filtering Piece is located at the second printing opacity layer surface.
- 6. back side illumination image sensor according to claim 5, it is characterised in that the second euphotic material is to have Machine glass, polycarbonate, polystyrene or poly terephthalic acid ethanol resin；The 3rd euphotic material is organic glass Glass, polycarbonate, polystyrene or poly terephthalic acid ethanol resin.
- A kind of 7. forming method of back side illumination image sensor, it is characterised in that including：Wafer main body is provided, wafer main body includes the main body back side, and wafer main body includes pixel unit area, and pixel unit area includes the One area and the secondth area, there are the first sensor devices in the area of wafer main body first, there is the second photoreceptor in the area of wafer main body second Part；The first groove is formed in the area of wafer main body first, and the main body back side exposes the first groove；Form the first photic zone of full first groove of filling；Blue optical filter is formed in the first printing opacity layer surface；After forming the first photic zone, the red optical filter positioned at the second area main body back side is formed.
- 8. the forming method of back side illumination image sensor according to claim 7, it is characterised in that first photic zone Material be lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol resin.
- 9. the forming method of back side illumination image sensor according to claim 7, it is characterised in that also wrap pixel unit area Include：3rd area；There are the 3rd sensor devices in the area of wafer main body the 3rd；The forming method of the back side illumination image sensor also includes：Before blue optical filter and red optical filter is formed, in wafer The 3rd groove is formed in the area of main body the 3rd, and the main body back side exposes the 3rd groove；Form the 3rd photic zone of full 3rd groove of filling；Shape Into after the 3rd photic zone, the blue optical filter and red optical filter are formed；Green optical filter is formed in the 3rd printing opacity layer surface.
- 10. the forming method of back side illumination image sensor according to claim 9, it is characterised in that first printing opacity Thickness of the layer in the normal direction of the main body back side is more than thickness of the 3rd photic zone in the normal direction of the main body back side；Described first The minimum range of photic zone to the first sensor devices is less than the minimum range of the 3rd photic zone to the 3rd sensor devices.
- 11. the forming method of the back side illumination image sensor according to claim 9 or 10, it is characterised in that also include： Formed before red optical filter, the first photic zone and the 3rd photic zone, the second groove is formed in the area of wafer main body second, and main body is carried on the back Face exposes the second groove；Form the second photic zone of full second groove of filling；After forming the second photic zone, the blue optical filter is formed With green optical filter；The red optical filter is formed in the second printing opacity layer surface；Second photic zone is in the normal direction of the main body back side Thickness, less than thickness of first photic zone in the normal direction of the main body back side and less than the 3rd photic zone in main body back side normal side Upward thickness；The minimum range of first photic zone to the first sensor devices is less than the second photic zone to the second sensor devices most Small distance；The minimum range of 3rd photic zone to the 3rd sensor devices is less than the most narrow spacing of the second photic zone to the second sensor devices From.
- 12. the forming method of back side illumination image sensor according to claim 11, it is characterised in that second printing opacity The material of layer is lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol resin；The 3rd euphotic material Expect for lucite, polycarbonate, polystyrene or poly terephthalic acid ethanol resin.
- 13. the forming method of back side illumination image sensor according to claim 11, it is characterised in that forming described the During one groove, second groove and the 3rd groove are formed；Or after forming first groove, form the second groove；Formed After second groove, the 3rd groove is formed.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117238941A (en) * | 2023-11-15 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Backside illuminated image sensor and preparation method thereof |
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| US20090294886A1 (en) * | 2006-05-09 | 2009-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making wafer structure for backside illuminated color image sensor |
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| KR20060010899A (en) * | 2004-07-29 | 2006-02-03 | 매그나칩 반도체 유한회사 | Image sensor with removed color filter and method for fabrication thereof |
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