CN107829072A - A kind of sputtering target material and device - Google Patents
A kind of sputtering target material and device Download PDFInfo
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- CN107829072A CN107829072A CN201711347560.4A CN201711347560A CN107829072A CN 107829072 A CN107829072 A CN 107829072A CN 201711347560 A CN201711347560 A CN 201711347560A CN 107829072 A CN107829072 A CN 107829072A
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- sputtering
- target
- sputter
- zone
- sputtering zone
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of sputtering target material and sputter equipment, the target include multiple sputtering zones, and the sputter material to be sputtered of the multiple sputtering zone is different；The target also includes insulation layer, and between two sputtering zones, two neighboring sputtering zone is carried out into electrical insulation.A variety of differences are combined into one piece of target by the sputtering target material from the target of material, realize that one piece of target is used for the film preparation of different component, so as to reduce sputtering equipment chamber, improve equipment capacity.
Description
Technical field
The present embodiments relate to thin film sputtering field, more particularly to a kind of sputtering target material and device.
Background technology
Sputtering technology is the method for manufacturing thin film commonly used in semiconductor technology, and sputtering target material is the crucial knot of sputtering technology
One of structure.In industrial processes, in order to avoid target contamination, a kind of target is only placed in a sputtering chamber；Therefore, making
, it is necessary to design multiple chambers to place different targets during standby polycompound.Unnecessary chamber adds hold facility sky
Between, also increase the operating cost of equipment.It is therefore desirable to a kind of new multicomponent target, to reduce sputtering equipment chamber, is improved
Equipment capacity.
The content of the invention
The problem to be solved in the present invention is how to reduce sputtering equipment chamber, improves equipment capacity.
To solve this problem, the invention provides a kind of sputtering target material, the target includes：Multiple sputtering zones, it is described more
The sputter material to be sputtered of individual sputtering zone can be different；Insulation layer, between two sputtering zones, by two neighboring sputtering zone
Carry out electrical insulation.
Optionally, the quantity of the multiple sputtering zone is even number；The sputter material identical sputtering zone is on described
Sputtering target material Central Symmetry is distributed.
Optionally, the quantity of sputter material identical sputtering zone is even number.
Optionally, in addition to：Baffle plate, for protecting the sputtering zone that need not be sputtered, the baffle plate protrudes from the target.
Present invention also offers a kind of sputter equipment, including the sputtering target material described in any of the above.
Optionally, in addition to：Backboard, the backboard are used to load the target, and the backboard includes multiple conductive regions
With multiple insulating regions, multiple sputtering zones of the conductive region and the target correspond, the insulating regions with it is described
Multiple insulation layers of target correspond；The conductive region is electrically isolated by the insulating regions.
Optionally, in addition to electrode, one end of the electrode are connected with the conductive region, and the other end is connected with power supply.
Optionally, sputter material identical sputtering zone is by same power supply.
Optionally, the control power supply of each sputtering zone is different.
Optionally, in addition to pallet, the pallet are used to load substrate to be sputtered, and the pallet can continue to rotate.
Compared with prior art, the technical scheme of the embodiment of the present invention at least has the following advantages that：
In above-mentioned scheme, set multiple sputtering zones that the target of a variety of different materials also is combined into one in one piece of target
Block target, and the insulation layer for carrying out electrical insulation is provided between each two sputtering zone, therefore can realize one piece of target
For the film preparation of different component, so as to reduce sputtering equipment chamber, equipment capacity is improved.
Further, the quantity of the multiple sputtering zone is even number；The sputter material identical sputtering zone is on described
Sputtering target material Central Symmetry is distributed.The symmetrical uniformity that ensure that thin film sputtering of sputtering zone.
Further, the sputtering target material can also include baffle plate, for protecting the sputtering zone that need not be sputtered, the baffle plate
Protrude from the target.Using baffle plate protect in sputter procedure without using sputtering zone, extend life-span of target.
Further, present invention also offers a kind of sputter equipment, including the sputtering target material described in above-mentioned any one.Use
The sputter equipment, it is possible to achieve one piece of target is used for the film preparation of different component, so as to reduce sputtering equipment chamber,
Improve equipment capacity.
Brief description of the drawings
Fig. 1 is a kind of overlooking the structure diagram of sputtering target material in embodiments of the invention；
Fig. 2 is the overlooking the structure diagram of another sputtering target material in embodiments of the invention；
Fig. 3 is a kind of connection diagram of target and power supply in the embodiment of the present invention；
Fig. 4 is the connection diagram of another target and power supply in the embodiment of the present invention；
Fig. 5 is a kind of side structure schematic diagram of the target of sputter equipment in the embodiment of the present invention；
Fig. 6 is a kind of structural representation of sputtering target material in embodiments of the invention.
Embodiment
As described above, there is the problem of space-consuming is big and operating cost is high in current sputtering target material.
To solve the above problems, the embodiment of the present invention sets multiple sputtering zones in one piece of target, also i.e. by a variety of different materials
The target of material is combined into one piece of target, and the insulation layer for carrying out electrical insulation is provided between each two sputtering zone, therefore can be with
The film preparation that one piece of target is used for different component is realized, so as to reduce sputtering equipment chamber, improves equipment capacity.
It is understandable to enable the above-mentioned purpose of the embodiment of the present invention, feature and advantage to become apparent, it is right below in conjunction with the accompanying drawings
The specific embodiment of the embodiment of the present invention is described in detail.
Fig. 1 is a kind of overlooking the structure diagram of sputtering target material in embodiments of the invention.The target 10 includes multiple splash
Area 11 is penetrated, the sputter material to be sputtered of multiple sputtering zones 11 is different, and selects suitable material according to actual process demand
Combination, such as sputtering zone 11 can be the combination of copper and tantalum, or combination of indium and gallium etc..
The target 10 also includes insulation layer 12, and between two sputtering zones 11, two neighboring sputtering zone is carried out into electricity
Insulation.
It should be noted that the region representations of different letters have a sputtering zone of different sputter materials in Fig. 1, such as with
Alphabetical a sputtering zone represents there is a kind of sputter material in the sputtering zone, such as copper；Sputtering zone with alphabetical b represents that this splashes
Penetrating has another sputter material in area, such as tantalum.It should be noted that letter is used to illustrate a kind of sputter material in figure, and
Alphabetical physical presence is not indicated that.It is identical with this if any similar mark, its meaning in embodiment afterwards and accompanying drawing.
In order to make it easy to understand, Fig. 1 is only labelled with sputtering zone 11 at one, it is readily understood that residing for other multiple sputtering zones 11
Position.The structural representation for the target assumed when the quantity of sputtering zone 11 is exemplarily only illustrated in Fig. 1 by 8, this shows
The example description of the invention merely for convenience and understanding, are not construed as limiting.
In specific implementation, the quantity of sputtering zone 11 can be selected according to actual process demand.It is if for example, made
When standby film component contains three kinds of materials, such as CuInS, the quantity of sputtering zone 11 can be six, or 3.Sputtering zone
11 quantity can also be 4, simply for 4 when, any of three kinds of elements sputtering zone 11 occupied in target 10
Quantity and unequal.
Eight different sputter areas are identified in Fig. 1 altogether, are followed successively by sputter area a, b, c, d, e, f, g and h, this mark
Know only for purposes of illustration only, it is not intended that sputter area shall be limited only to the extent eight.The embodiment of the present invention sets multiple sputtering zones in one
A variety of differences from the target of material are combined into one piece of target by block target, namely tool, and be provided between each two sputtering zone into
The insulation layer of row electrical insulation, therefore the film preparation that one piece of target is used for different component can be realized, so as to reduce
Sputtering equipment chamber, improve equipment capacity.
Insulation layer 12 is only indicated with a straight line, but it is a straight line that it, which does not represent insulation layer 12, insulation
The shape in area 12 can be configured according to being actually needed, such as rectangular block, rectangular tab etc..
It should be noted that Fig. 1 is exemplarily to have marked sputtering zone 11 and the position relationship of insulation layer 12, it is not offered as
Shape, the size of reality, do not represent the proportionate relationship between actual sputtering zone 11 and insulation layer 12 yet, in specific implementation, this
Art personnel can be adjusted according to actual process demand.
In certain embodiments, insulation layer 12 can take up region as small as possible, so as to reserve more regions to splashing
Penetrate area 12.
Fig. 2 is the overlooking the structure diagram of another sputtering target material in the embodiment of the present invention.The quantity of sputtering zone 11 is even
It is several；Sputter material identical sputtering zone is distributed on the Central Symmetry of sputtering target material 10, is ensured with this, sputter obtained film into
Divide uniformly, roughness is low.
The region representation of same letter has the sputtering zone of identical sputter material, such as the region table with alphabetical a in Fig. 2
Show that there is a kind of sputter material in the region, with another sputter material in the region of the region representation with alphabetical b.In figure
Letter is used to illustrate a kind of sputter material, is not offered as alphabetical physical presence.In embodiment afterwards and accompanying drawing, if any similar
Mark, its meaning is identical with this.
In certain embodiments, the quantity of sputter material identical sputtering zone 11 is even number, is ensured with this, difference sputtering
The sputtering zone 11 of material is distributed as symmetrically in target, and then the thin film composition that sputtering obtains is uniform, and roughness is low.
In certain embodiments, insulation layer 12 is physical property, the high dielectric constant material of chemical property stabilization, such as oxygen
Change aluminium ceramics, so as to improve insulation effect, and then improve the performance of target.
It should be noted that Fig. 2 is exemplarily to have marked sputtering zone 11 and the position relationship of insulation layer 12, it is not offered as
Shape, the size of reality, do not represent the proportionate relationship between actual sputtering zone 11 and insulation layer 12 yet, in specific implementation, this
Art personnel can be adjusted according to actual process demand.
To sum up, the target that this implementation is previously mentioned, a variety of differences is combined into one piece of target from the target of material, realize one piece of target
Timber-used, so as to reduce sputtering equipment chamber, improves equipment capacity in the film preparation of different component.
In certain embodiments, the sputtering zone 11 of at least different sputter materials is by different power supplies, sputter material phase
Same sputtering zone 11 can be by same power supply.A kind of target in the specific embodiments of the invention that may be referred to shown in Fig. 3
The connection diagram of material and power supply, as shown in figure 3, the target in a of region is all controlled by a power supply 20a, the target in the b of region
Material is all controlled by another power supply 20b.Using this scheme, the sputtering zone 11 with identical sputter material can be enabled simultaneously,
It ensure that the uniformity for preparing film.
Fig. 4 is the connection diagram of another target and power supply in the embodiment of the present invention, and the control of each sputtering zone 11 is electric
Source is different.For example, two region a are controlled by two power supplys 30a and 30b respectively, two region b are respectively by two other power supply
30c and 30d controls.Using this scheme, enabling for each sputtering zone 11 can be controlled individually with disabling, can be according to required preparation
Component and distribution mode flexible design the sputtering mode of material.
Fig. 3 and Fig. 4 is exemplary illustration, and the quantity and power supply of power supply and the connected mode of target can be according to actual process
Demand is adjusted, if for example, sputter material has three kinds, sputter material identical sputtering zone 11 is by same power supply control
System, need three power supplys, i.e. the control power supply of each sputtering zone 11 is different.
Present invention also offers a kind of sputter equipment, Fig. 5 is a kind of target of sputter equipment 40 in the embodiment of the present invention
Side structure schematic diagram.The sputter equipment 40 includes the sputtering target material described in any of the above-described embodiment.
As shown in figure 5, the sputter equipment 40 includes backboard 41.Backboard 41 is used to load target 10.Backboard 41 includes multiple
Conductive region 42 and multiple insulating regions 43, a pair of multiple conductive regions 42 of backboard 41 and multiple sputtering zones 11 1 of target 10
Should, multiple insulating regions 43 of backboard 41 correspond with multiple insulation layers 12 of target 10；The plurality of insulating regions 43 will be more
Individual conductive region 42 is electrically isolated.
In some implementation embodiments, sputter equipment 40 also includes electrode 44, one end and the phase of conductive region 42 of electrode 44
Even, the other end is connected with power supply 20.Power supply 20 gives the sputter material of corresponding sputtering zone to apply voltage, and then shape by electrode 44
Into electric field, guiding projectile is bombarded the sputter material in region.
In certain embodiments, sputter equipment 40 also includes pallet, and pallet is used to load substrate to be sputtered.Pallet can be held
Continuous rotation, and then the uniformity of film prepared by guarantee.
Fig. 6 is a kind of structural representation of sputtering target material in embodiments of the invention, in the embodiment, the sputtering of target 10
Baffle plate 121 is provided with area 11, for blocking the sputtering zone that need not be sputtered, and baffle plate 121 protrudes from sputtering target material 10.At this
To invent in an embodiment, baffle plate 121 can be set along insulation layer 12, such as shown in Figure 5.
When being sputtered, projectile bombards sputter material in the presence of electric field or magnetic field, is bombarded at sputter material
Substrate is flown in the part got off, and then forms film.Baffle plate 121 can be used for blocking projectile so that the sputtering being only powered
Area is bombarded, and the sputtering zone 11 being not powered on will not be bombarded.
In certain embodiments, baffle plate 121 can use and the identical material of insulation layer 12 prepare so that baffle plate 121 with
Insulation layer 12 can be with integral forming.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (10)
- A kind of 1. sputtering target material, it is characterised in that including：Multiple sputtering zones, the sputter material to be sputtered of the multiple sputtering zone are different；Insulation layer, between two sputtering zones, two neighboring sputtering zone is subjected to electrical insulation.
- 2. sputtering target material according to claim 1, it is characterised in that the quantity of the multiple sputtering zone is even number；Institute Sputter material identical sputtering zone is stated to be distributed relative to the sputtering target material Central Symmetry.
- 3. sputtering target material according to claim 1, it is characterised in that the quantity of sputter material identical sputtering zone is even number It is individual.
- 4. sputtering target material according to claim 1, it is characterised in that also include：Baffle plate, for protecting the sputtering zone that need not be sputtered, the baffle plate protrudes from the target.
- 5. a kind of sputter equipment, including the sputtering target material described in claim any one of 1-4.
- 6. sputter equipment as claimed in claim 5, it is characterised in that also include：Backboard, the backboard are used to load the target, and the backboard includes multiple conductive regions and multiple insulating regions, described Multiple sputtering zones of conductive region and the target correspond, and multiple insulation layers of the insulating regions and the target are one by one It is corresponding；The conductive region is electrically isolated by the insulating regions.
- 7. sputter equipment as claimed in claim 6, it is characterised in that also led including electrode, one end of the electrode with described Electric region is connected, and the other end is connected with power supply.
- 8. sputter equipment according to claim 7, it is characterised in that sputter material identical sputtering zone is by same power supply Control.
- 9. sputter equipment according to claim 7, it is characterised in that the control power supply of each sputtering zone is different.
- 10. sputter equipment according to claim 7, it is characterised in that also including pallet, the pallet is used to load to wait to splash Substrate is penetrated, the pallet persistently rotates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711347560.4A CN107829072A (en) | 2017-12-14 | 2017-12-14 | A kind of sputtering target material and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711347560.4A CN107829072A (en) | 2017-12-14 | 2017-12-14 | A kind of sputtering target material and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107829072A true CN107829072A (en) | 2018-03-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711347560.4A Pending CN107829072A (en) | 2017-12-14 | 2017-12-14 | A kind of sputtering target material and device |
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| CN (1) | CN107829072A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115976477A (en) * | 2022-12-12 | 2023-04-18 | 佛山市博顿光电科技有限公司 | Target mounting structure and vacuum coating machine |
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2017
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Application publication date: 20180323 |