CN107817279B - A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor - Google Patents

A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor Download PDF

Info

Publication number
CN107817279B
CN107817279B CN201710897155.3A CN201710897155A CN107817279B CN 107817279 B CN107817279 B CN 107817279B CN 201710897155 A CN201710897155 A CN 201710897155A CN 107817279 B CN107817279 B CN 107817279B
Authority
CN
China
Prior art keywords
nio
film
sensor
electrode
situ
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710897155.3A
Other languages
Chinese (zh)
Other versions
CN107817279A (en
Inventor
沈岩柏
赵思凯
李停停
李国栋
魏德洲
高淑玲
韩聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northeastern University China
Original Assignee
Northeastern University China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northeastern University China filed Critical Northeastern University China
Priority to CN201710897155.3A priority Critical patent/CN107817279B/en
Publication of CN107817279A publication Critical patent/CN107817279A/en
Application granted granted Critical
Publication of CN107817279B publication Critical patent/CN107817279B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/127Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles

Abstract

Invention is related to a kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor and preparation method thereof belongs to the gas sensor technical field of one-dimensional metal oxide semiconductor material.A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor, the sensor are made of electrode member and uniform growth in situ in the NiO film of electrode element surface, wherein the NiO film is made of NiO crystal grain, and the NiO crystal grain is face-centered cubic phase crystal structure, and diameter is 20~30nm.The gas sensor is obtained when operating temperature is 150 DEG C to NO2Peak response, response and recovery time are short, and selectivity is high, and long-time stability are good, the deficiencies of INVENTIONConventional metal-oxide semiconductor-type gas sensor preparation process flow is complicated, selectivity is poor with long-time stability is efficiently solved, is the NO with good development prospect2Gas sensor.

Description

A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor
Technical field
The present invention relates to a kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor and preparation method thereof, Belong to the gas sensor technical field of one-dimensional metal oxide semiconductor material.
Background technique
With the development of society and the progress of science and technology, people's lives quality has occurred revolutionary variation, but with The various negative issues of bring also constantly highlight simultaneously for this.In recent years, haze, greenhouse effects, acid rain etc. threaten people's body strong The phenomenon that health, constantly aggravates, and gas leak, gas explosion, gassing etc. threaten the accident of people's life security to occur again and again, So that people constantly promote the demand of pollution, danger, the detection and alarm of pernicious gas, to sense to high performance gas The development of device proposes the more urgently requirement with harshness.
There are many type of gas sensor at present, can be divided into semiconductor-type gas sensing according to gas sensitive and action effect Device, electrochemical gas sensor, solid electrolyte formula gas sensor, catalytic combustion type gas sensor, optical type gas Sensor, high score minor gas sensor etc..Wherein, metal-oxide semiconductor (MOS) formula gas sensor is due to response speed Fastly, high sensitivity, the advantages that detection gas concentration limit is low, all solid state, small in size, are a kind of gas being most widely used at present Body sensor.The working environment of gas sensor is complicated, usually contains a variety of toxic and harmful gas, metal oxide is partly led For body gas sensor, poor gas-selectively is always to restrict an important factor for it further develops.
NiO is a kind of p-type broad stopband metal oxide semiconductor material, and forbidden bandwidth is in 3.6~4.0eV or so. NiO material has very excellent electronic transmission performance and chemical stability, in electrochromism, catalysis, magnetic material, battery, gas The fields such as sensor have all shown good application prospect.Due to its gas sensitivity with higher, low cost, with it is various The advantages that nanometer technique is preferably compatible, had once been considered as one of the best candidate of gas sensitive.Gas sensitive element at present The preparation method of part is substantially the gas sensitive that will be prepared in advance and is manually applied on electrode, so that gas sensitive and base Hardened resultant force is poor, poor so as to cause the long-time stability of gas sensor.
Summary of the invention
For current metal-oxide semiconductor (MOS) formula gas sensor in terms of gas-selectively and long-time stability not Foot, the present invention provide a kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor and preparation method thereof.Purpose It is to lift coating method by sol-gel to go out in electrode surface growth in situ that surface topography is uniform, property is stable, loose porous NiO nano thin-film, and it is prepared into the NO with highly selective, excellent long-time stability2Sensor, to overcome existing sensor to select The deficiencies of selecting property is not high, long-time stability are poor.
A kind of NO2Sensor, the sensor by electrode member and uniform growth in situ electrode element surface NiO Film composition,
Wherein, the NiO film is made of NiO crystal grain, and the NiO crystal grain is face-centered cubic phase crystal knot Structure, diameter are 20~30nm.
NO of the present invention2Sensor, the NiO nano thin-film are detection NO2The gas sensitive of gas.
In above-mentioned technical proposal, the NiO nano thin-film architectural characteristic uniform, loose porous with surface topography.
In above-mentioned technical proposal, the material of the preferably described electrode member is Al2O3Ceramic material or gold.
In above-mentioned technical proposal, the shape of the preferably described electrode member is tubulose or plane.
Further, the most preferably described electrode member is tubular ceramic element or plane gold dollar part.
In above-mentioned technical proposal, the preferably described sensor is by electrode element surface growth in situ NiO nano thin-film Gained.
Further, the method for the growth in situ NiO nano thin-film are as follows: using lifting coating method in electrode element surface NiO colloidal sol is coated, it is dry;The electrode member that surface is coated with NiO colloidal sol is heat-treated, condition are as follows: with 3 DEG C/min's Heating rate is heated to 500 DEG C and keeps 1h;Aging for 24 hours, both obtained at 250~300 DEG C.
Further, the NiO colloidal sol is made as follows: at room temperature, second two being added into nickel acetate tetrahydrate Alcohol methyl ether, stirring, is completely dissolved in nickel acetate tetrahydrate among ethylene glycol monomethyl ether;Solution will be formed by 60 DEG C of stirring 2h, And the ammonium hydroxide of 25~28wt.% is added dropwise dropwise into solution;Sealing is aged for 24 hours at room temperature, and filtering obtains NiO colloidal sol,
Wherein, nickel acetate tetrahydrate, ammonium hydroxide, ethylene glycol monomethyl ether molar ratio be 5~7:5~7:100.
In above-mentioned technical proposal, the nickel acetate tetrahydrate, ammonium hydroxide, ethylene glycol monomethyl ether molar ratio in ammonium hydroxide amount with ammonia Solute meter in water.
Further, the lifting film carries out in pulling coating machine, is dried after film, the lifting film Parameter is arranged in machine are as follows: stroke 6cm, decrease speed 300~500 μm/s, 30~60s of quiescent time, 300~400 μ of the rate of climb m/s;If you need to increase the film number of plies, then repeat the above steps.
Compared with prior art, the features of the present invention and excellent effect are:
The present invention provides one kind based on electrode surface growth in situ, preparation method is simple, selectivity is high, long-time stability The NiO nano thin-film NO of the advantages that good2Sensor and preparation method thereof.From preparation method, the present invention passes through colloidal sol-first Gel method has gone out layer of Ni O nano thin-film in electrode surface growth in situ, is then prepared into gas sensor by aging process. The gas sensor is obtained when operating temperature is 150 DEG C to NO2Peak response, response and recovery time it is short, selectivity Height, long-time stability are good, efficiently solve INVENTIONConventional metal-oxide semiconductor-type gas sensor preparation process flow complexity, choosing The deficiencies of selecting property and long-time stability are poor, is the NO with good development prospect2Gas sensor.
Detailed description of the invention
Fig. 1 is the NO based on tubular ceramic electrode surface growth in situ NiO nano thin-film in embodiment 1 and embodiment 22 The structural schematic diagram of sensor.Wherein, 1:Al2O3Ceramic tube;2:NiO air-sensitive coating;3: resistive heater;4: gold electrode;5: platinum Gold wire.
Fig. 2 is the X ray diffracting spectrum of NiO nano thin-film prepared by the present invention;
Fig. 3 is (a) low range and (b) high magnification electron scanning micrograph of NiO nano thin-film prepared by the present invention;
Fig. 4 is the transmission electron microscope figure of the NiO crystal grain prepared by the present invention for constituting NiO nano thin-film;
Fig. 5 is gas sensor prepared by the present invention to 20ppm NO2Sensitivity and operating temperature between relational graph;
Fig. 6 be gas sensor prepared by the present invention when operating temperature is 150 DEG C to various concentration NO2Dynamic response Curve graph;
Fig. 7 is gas sensor prepared by the present invention sensitivity and NO when operating temperature is 150 DEG C2Between gas concentration Relational graph;
Fig. 8 be gas sensor prepared by the present invention when operating temperature is 150 DEG C to the sensitive of different detected gas Degree figure;
Fig. 9 be gas sensor prepared by the present invention when operating temperature is 150 DEG C to 20ppm NO2Sensitivity at any time Between variation diagram;
Figure 10 is the NO based on plane gold electrode surfaces growth in situ NiO nano thin-film in embodiment 3 and embodiment 42It passes Sensor component schematic diagram;Wherein: 6: plane Al2O3Ceramic substrate;7:NiO air-sensitive coating;8: adding thermal resistance;9: gold electrode;10: Platinum lead.
Specific embodiment
Following non-limiting embodiments can with a person of ordinary skill in the art will more fully understand the present invention, but not with Any mode limits the present invention.
Test method described in following embodiments is unless otherwise specified conventional method;The reagent and material, such as Without specified otherwise, commercially obtain.
Air-sensitive test macro described in following embodiments is bright Sheng science and technology WS-30A type air-sensitive test macro;The agingtable For bright Sheng science and technology TS-60 type agingtable.
Following NO as described in the examples2Sensor is obtained by following preparation methods:
(1) quantitative nickel acetate tetrahydrate is weighed with electronic balance to be put into triangular flask, added with pipette into triangular flask Enter quantitative ethylene glycol monomethyl ether, 3h then, which is mixed, with magnetic stirring apparatus at room temperature makes nickel acetate tetrahydrate be completely dissolved in second Among glycol methyl ether.Solution will be formed by and stir 2h in 60 DEG C of constant temperature water baths, and be added dropwise dropwise into solution a certain amount of Ammonium hydroxide as stabilizer/complexing agent.Wherein, nickel acetate tetrahydrate, ammonium hydroxide, ethylene glycol monomethyl ether molar ratio be 5~7:5~7: 100.Triangular flask sealing is taken out later, is aged obtains NiO colloidal sol for 24 hours at room temperature.The qualitative filter of NiO colloidal sol middling speed that will be obtained Paper filtering, sealing are stand-by.
(2) it will be cleaned up with deionized water and ethanol solution to the electrode member of film, be then fixed in respectively The substrate bearing of pulling coating machine, while the beaker for filling stand-by NiO colloidal sol being put into the material cup rest area of pulling coating machine.
(3) relevant parameter of setting pulling coating machine: stroke 6cm, 300~500 μm/s of decrease speed, quiescent time 30~ Then 60s, 300~400 μm/s of the rate of climb start to carry out lifting film.After lifting film, electrode is placed in electric heating drum In wind drying box, dry 30min, takes out be cooled to room temperature later under the conditions of 80 DEG C.If you need to increase the film number of plies, then repeat State step (3).
(4) electrode for being coated with NiO film is put into tube furnace, with the heating rate heated Tube-furnace of 3 DEG C/min to 500 DEG C and keep 1h.After tube furnace is cooled to room temperature, layer of Ni O nano thin-film can be obtained on the electrode.
(5) electrode member is soldered in the detection pedestal of air-sensitive test macro, is placed on agingtable in 300 DEG C of conditions Lower aging is for 24 hours to get final gas sensor.
Embodiment 1
NO based on tubular ceramic electrode surface growth in situ NiO nano thin-film2Sensor element, structural schematic diagram is such as Shown in Fig. 1, by Al2O3Ceramic tube, gold electrode, platinum lead, resistive heater and air-sensitive material layer composition.Gold electrode is overlayed on Al2O3Ceramic pipe surface constitutes ceramic electrode, and platinum lead is welded on gold electrode surfaces, and resistive heater is transverse in Al2O3Ceramics Guan Zhong, gas sensitive are grown in entire Al2O3Ceramic tube and gold electrode surfaces.The gas sensitive ingredient is NiO nanometer thin Film is evenly distributed and is grown in ceramic electrode surface, the face-centered cubic phase NiO that NiO nano thin-film is 20~30nm by diameter Crystal grain is constituted, and film surface appearance is uniform, loose porous.
A kind of NO based on tubular ceramic electrode surface growth in situ NiO nano thin-film2Sensor and preparation method thereof is pressed It is carried out according to following steps:
(1) quantitative nickel acetate tetrahydrate is weighed with electronic balance to be put into triangular flask, added with pipette into triangular flask Enter quantitative ethylene glycol monomethyl ether, 3h then, which is mixed, with magnetic stirring apparatus at room temperature makes nickel acetate tetrahydrate be completely dissolved in second Among glycol methyl ether.Solution will be formed by and stir 2h in 60 DEG C of constant temperature water baths, and be added dropwise dropwise into solution a certain amount of Ammonium hydroxide as stabilizer/complexing agent.Wherein, nickel acetate tetrahydrate, ammonium hydroxide, ethylene glycol monomethyl ether molar ratio be 1:1:20 (ammonia For the amount of water in terms of solute, other embodiments are same).Triangular flask sealing is taken out later, is aged obtains NiO colloidal sol for 24 hours at room temperature.It will Obtained NiO colloidal sol middling speed qualitative filter paper filtering, sealing are stand-by.
(2) by the ceramic electrode of film, (gold electrode overlays on Al2O3The electrode member that ceramic pipe surface is constituted) it spends respectively Ionized water and ethanol solution clean up, and are then fixed in the substrate bearing of pulling coating machine, while will fill stand-by The beaker of NiO colloidal sol is put into the material cup rest area of pulling coating machine.
(3) relevant parameter of pulling coating machine is arranged: stroke 6cm, decrease speed 500 μm/s, quiescent time 30s rise Then 400 μm/s of speed starts to carry out lifting film.After lifting film, ceramic electrode is placed in electric drying oven with forced convection In, dry 30min, takes out be cooled to room temperature later under the conditions of 80 DEG C.It repeats step (3) and carries out film next time.
(4) ceramic electrode for being coated with 2 layers of NiO film is put into tube furnace, with the heating rate heated Tube of 3 DEG C/min Furnace is to 500 DEG C and keeps 1h.After tube furnace is cooled to room temperature, layer of Ni O nano thin-film can be obtained on ceramic electrode.
(5) ceramic electrode element is soldered in the detection pedestal of air-sensitive test macro, is placed on agingtable 300 Aging is for 24 hours to get final gas sensor under the conditions of DEG C.
The X ray diffracting spectrum of NiO nano thin-film is as shown in Figure 2.It can be seen from the figure that the NiO of electrode surface growth For face-centered cubic phase crystal structure, diffraction maximum peak shape is sharp, and halfwidth is smaller, and the diffraction maximum without any other impurity, shows NiO crystallinity is preferably and purity is higher.The scanning electron microscope (SEM) photograph of NiO nano thin-film is as shown in Figure 3.It can be seen from the figure that NiO receives Rice film is made of small NiO crystal grain, and surface topography is uniform and loose porous.Fig. 4 is the NiO crystalline substance for constituting NiO nano thin-film The transmission electron microscope figure of grain.As can be seen from the figure the diameter for constituting the NiO crystal grain of NiO nano thin-film is 20~30nm.
NO based on ceramic electrode surface in situ growth NiO nano thin-film2Sensor is to 20ppm NO2Sensitivity and work The relationship for making temperature is as shown in Figure 5.It can be seen from the figure that the sensor is obtained when operating temperature is 150 DEG C to NO2Most Atmospheric sensitivity.Fig. 6 is for the sensor at 150 DEG C of operating temperature to various concentration NO2Dynamic response curve.From figure As can be seen that the sensor response/recovery time it is shorter and have good invertibity and stability, while increased resistance value with NO2The reduction of concentration and reduce, show its sensitivity and NO2Concentration correlation, the sensor as shown in Figure 7 exist Sensitivity and NO when operating temperature is 150 DEG C2Relationship between concentration more can clearly be found out.
NO based on tubular ceramic electrode surface growth in situ NiO nano thin-film2Sensitivity of the sensor to gas with various As shown in Figure 8.As can be seen from Figure 8, the sensor is to 10ppm NO2Sensitivity much higher than to 1000ppm, other are common The sensitivity of toxic and harmful gas shows preferable gas-selectively.This shows the sensor in complicated gaseous environment In can be to NO2Effectively identified, shows preferable actual application prospect.Fig. 9 is the sensor to 20ppm NO2's Sensitivity versus time curve.It can be seen from the figure that the sensor its change of sensitivity range in 30 days is smaller, Good stability is shown, can preferably overcome the shortcomings of that existing sensor long-time stability are poor.
Embodiment 2
NO based on tubular ceramic electrode surface growth in situ NiO nano thin-film2Sensor element, structural schematic diagram is such as Shown in Fig. 1, by Al2O3Ceramic tube, gold electrode, platinum lead, resistive heater and air-sensitive material layer composition.Gold electrode is overlayed on Al2O3Ceramic pipe surface constitutes ceramic electrode, and platinum lead is welded on gold electrode surfaces, and resistive heater is transverse in Al2O3Ceramics Guan Zhong, gas sensitive are grown in entire Al2O3Ceramic tube and gold electrode surfaces.The gas sensitive ingredient is NiO nanometer thin Film is evenly distributed and is grown in ceramic electrode surface, the face-centered cubic phase NiO that NiO nano thin-film is 20~30nm by diameter Crystal grain is constituted, and film surface appearance is uniform, loose porous.
A kind of NO based on tubular ceramic electrode surface growth in situ NiO nano thin-film2Sensor and preparation method thereof is pressed It is carried out according to following steps:
(1) quantitative nickel acetate tetrahydrate is weighed with electronic balance to be put into triangular flask, added with pipette into triangular flask Enter quantitative ethylene glycol monomethyl ether, 3h then, which is mixed, with magnetic stirring apparatus at room temperature makes nickel acetate tetrahydrate be completely dissolved in second Among glycol methyl ether.Solution will be formed by and stir 2h in 60 DEG C of constant temperature water baths, and be added dropwise dropwise into solution a certain amount of Ammonium hydroxide as stabilizer/complexing agent.Wherein, nickel acetate tetrahydrate, ammonium hydroxide, ethylene glycol monomethyl ether molar ratio be 7:7:100.It Triangular flask sealing is taken out afterwards, is aged obtains NiO colloidal sol for 24 hours at room temperature.The NiO colloidal sol middling speed qualitative filter paper mistake that will be obtained Filter, sealing are stand-by.
(2) by the ceramic electrode of film, (gold electrode overlays on Al2O3The electrode member that ceramic pipe surface is constituted) it spends respectively Ionized water and ethanol solution clean up, and are then fixed in the substrate bearing of pulling coating machine, while will fill stand-by The beaker of NiO colloidal sol is put into the material cup rest area of pulling coating machine.
(3) relevant parameter of pulling coating machine is arranged: stroke 6cm, decrease speed 300 μm/s, quiescent time 60s rise Then 300 μm/s of speed starts to carry out lifting film.After lifting film, ceramic electrode is placed in electric drying oven with forced convection In, dry 30min, takes out be cooled to room temperature later under the conditions of 80 DEG C.
(4) ceramic electrode for being coated with 1 layer of NiO film is put into tube furnace, with the heating rate heated Tube of 3 DEG C/min Furnace is to 500 DEG C and keeps 1h.After tube furnace is cooled to room temperature, layer of Ni O nano thin-film can be obtained on ceramic electrode.
(5) ceramic electrode element is soldered in the detection pedestal of air-sensitive test macro, is placed on agingtable 300 Aging is for 24 hours to get final gas sensor under the conditions of DEG C.
Through detecting, the NO manufactured in the present embodiment based on NiO nano thin-film2Sensor is in 100~200 DEG C of items of operating temperature To NO under part2With good gas-sensitive property
Embodiment 3
NO based on plane gold electrode surfaces growth in situ NiO nano thin-film2Sensor element, structural schematic diagram is as schemed Shown in 10, by plane Al2O3Ceramic substrate, gold electrode, platinum lead, adding thermal resistance and air-sensitive material layer composition.Gold electrode is covered In plane Al2O3Ceramic base plate surface constitutes plane gold electrode, and platinum lead is welded on gold electrode surfaces, and adding thermal resistance overlays on flat Face Al2O3The ceramic substrate back side, gas sensitive are grown in entire plane Al2O3Ceramic substrate and gold electrode surfaces.The air-sensitive Material composition is NiO nano thin-film, and uniform distribution is grown in electrode element surface, NiO nano thin-film by diameter be 20~ The face-centered cubic phase NiO crystal grain of 30nm is constituted, and film surface appearance is uniform, loose porous.
A kind of NO based on plane gold electrode surfaces growth in situ NiO nano thin-film2Sensor and preparation method thereof, according to Following steps carry out:
(1) quantitative nickel acetate tetrahydrate is weighed with electronic balance to be put into triangular flask, added with pipette into triangular flask Enter quantitative ethylene glycol monomethyl ether, 3h then, which is mixed, with magnetic stirring apparatus at room temperature makes nickel acetate tetrahydrate be completely dissolved in second Among glycol methyl ether.Solution will be formed by and stir 2h in 60 DEG C of constant temperature water baths, and be added dropwise dropwise into solution a certain amount of Ammonium hydroxide as stabilizer/complexing agent.Wherein, nickel acetate tetrahydrate, ammonium hydroxide, ethylene glycol monomethyl ether molar ratio be 1:1:20.It Triangular flask sealing is taken out afterwards, is aged obtains NiO colloidal sol for 24 hours at room temperature.The NiO colloidal sol middling speed qualitative filter paper mistake that will be obtained Filter, sealing are stand-by.
(2) by the plane gold electrode of film, (gold electrode overlays on plane Al2O3The electrode member that ceramic base plate surface is constituted) It is cleaned up respectively with deionized water and ethanol solution, is then fixed in the substrate bearing of pulling coating machine, simultaneously will The beaker for filling stand-by NiO colloidal sol is put into the material cup rest area of pulling coating machine.
(3) relevant parameter of pulling coating machine is arranged: stroke 6cm, decrease speed 500 μm/s, quiescent time 30s rise Then 400 μm/s of speed starts to carry out lifting film.After lifting film, electrode is placed in electric drying oven with forced convection, In Dry 30min, takes out be cooled to room temperature later under the conditions of 80 DEG C.It repeats step (3) and carries out film next time.
(4) the plane gold electrode for being coated with 2 layers of NiO film is put into tube furnace, with the heating rate heating tube of 3 DEG C/min Formula furnace is to 500 DEG C and keeps 1h.After tube furnace is cooled to room temperature, layer of Ni O nanometer thin can be obtained on plane gold electrode Film.
(5) plane gold electrode element is soldered in the detection pedestal of air-sensitive test macro, is placed on agingtable Aging is for 24 hours to get final gas sensor under the conditions of 300 DEG C.
Through detecting, the NO manufactured in the present embodiment based on NiO nano thin-film2Sensor is in 100~200 DEG C of items of operating temperature To NO under part2With good gas-sensitive property.
Embodiment 4
NO based on plane gold electrode surfaces growth in situ NiO nano thin-film2Sensor element, structural schematic diagram is as schemed Shown in 10, by plane Al2O3Ceramic substrate, gold electrode, platinum lead, adding thermal resistance and air-sensitive material layer composition.Gold electrode is covered In plane Al2O3Ceramic base plate surface constitutes plane gold electrode, and platinum lead is welded on gold electrode surfaces, and adding thermal resistance overlays on flat Face Al2O3The ceramic substrate back side, gas sensitive are grown in entire plane Al2O3Ceramic substrate and gold electrode surfaces.The air-sensitive Material composition is NiO nano thin-film, and uniform distribution is grown in electrode element surface, NiO nano thin-film by diameter be 20~ The face-centered cubic phase NiO crystal grain of 30nm is constituted, and film surface appearance is uniform, loose porous.
A kind of NO based on plane gold electrode surfaces growth in situ NiO nano thin-film2Sensor and preparation method thereof, according to Following steps carry out:
(1) quantitative nickel acetate tetrahydrate is weighed with electronic balance to be put into triangular flask, added with pipette into triangular flask Enter quantitative ethylene glycol monomethyl ether, 3h then, which is mixed, with magnetic stirring apparatus at room temperature makes nickel acetate tetrahydrate be completely dissolved in second Among glycol methyl ether.Solution will be formed by and stir 2h in 60 DEG C of constant temperature water baths, and be added dropwise dropwise into solution a certain amount of Ammonium hydroxide as stabilizer/complexing agent.Wherein, nickel acetate tetrahydrate, ammonium hydroxide, ethylene glycol monomethyl ether molar ratio be 7:7:100.It Triangular flask sealing is taken out afterwards, is aged obtains NiO colloidal sol for 24 hours at room temperature.The NiO colloidal sol middling speed qualitative filter paper mistake that will be obtained Filter, sealing are stand-by.
(2) by the plane gold electrode of film, (gold electrode overlays on plane Al2O3The electrode member that ceramic base plate surface is constituted) It is cleaned up respectively with deionized water and ethanol solution, is then fixed in the substrate bearing of pulling coating machine, simultaneously will The beaker for filling stand-by NiO colloidal sol is put into the material cup rest area of pulling coating machine.
(3) relevant parameter of pulling coating machine is arranged: stroke 6cm, decrease speed 300 μm/s, quiescent time 60s rise Then 300 μm/s of speed starts to carry out lifting film.After lifting film, electrode is placed in electric drying oven with forced convection, In Dry 30min, takes out be cooled to room temperature later under the conditions of 80 DEG C.
(4) the plane gold electrode for being coated with 1 layer of NiO film is put into tube furnace, with the heating rate heating tube of 3 DEG C/min Formula furnace is to 500 DEG C and keeps 1h.After tube furnace is cooled to room temperature, layer of Ni O nanometer thin can be obtained on plane gold electrode Film.
(5) plane gold electrode element is soldered in the detection pedestal of air-sensitive test macro, is placed on agingtable Aging is for 24 hours to get final gas sensor under the conditions of 300 DEG C.
Through detecting, the NO manufactured in the present embodiment based on NiO nano thin-film2Sensor is in 100~200 DEG C of items of operating temperature To NO under part2With good gas-sensitive property.

Claims (4)

1. a kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor, it is characterised in that: the sensor is by electricity Pole element and uniform growth in situ are formed in the NiO film of electrode element surface, wherein the NiO film is by NiO crystal grain It constituting, the NiO crystal grain is face-centered cubic phase crystal structure, and diameter is 20~30nm,
The sensor is described growth in situ NiO nanometers as obtained by electrode element surface growth in situ NiO nano thin-film The method of film are as follows: NiO colloidal sol is coated in electrode element surface using lifting coating method, it is dry;Surface is coated with NiO colloidal sol Electrode member be heat-treated, condition are as follows: be heated to 500 DEG C with the heating rate of 3 DEG C/min and keep 1h;250~300 DEG C Lower aging for 24 hours, both obtained, wherein
The NiO colloidal sol is made as follows:
At room temperature, ethylene glycol monomethyl ether is added into nickel acetate tetrahydrate, stirs, nickel acetate tetrahydrate is made to be completely dissolved in ethylene glycol first Among ether;Solution will be formed by continue to stir 2h in 60 DEG C, and the ammonium hydroxide of 25~28wt.% is added dropwise dropwise into solution;It is close Envelope, be aged at room temperature for 24 hours, filtering, obtain NiO colloidal sol, wherein nickel acetate tetrahydrate, ammonium hydroxide, ethylene glycol monomethyl ether molar ratio For 5~7:5~7:100.
2. sensor according to claim 1, it is characterised in that: the material of the electrode member is Al2O3Ceramic material or Gold.
3. sensor according to claim 1, it is characterised in that: the shape of the electrode member is tubulose or plane.
4. sensor according to claim 1, it is characterised in that: the lifting film carries out in pulling coating machine, applies It is dried after film, parameter is arranged in the pulling coating machine are as follows: stroke 6cm, 300~500 μm/s of decrease speed, quiescent time 30 ~60s, 300~400 μm/s of the rate of climb;If you need to increase the film number of plies, then repeat the above steps.
CN201710897155.3A 2017-09-28 2017-09-28 A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor Active CN107817279B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710897155.3A CN107817279B (en) 2017-09-28 2017-09-28 A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710897155.3A CN107817279B (en) 2017-09-28 2017-09-28 A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor

Publications (2)

Publication Number Publication Date
CN107817279A CN107817279A (en) 2018-03-20
CN107817279B true CN107817279B (en) 2019-10-29

Family

ID=61607217

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710897155.3A Active CN107817279B (en) 2017-09-28 2017-09-28 A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor

Country Status (1)

Country Link
CN (1) CN107817279B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110514700B (en) * 2019-09-27 2021-09-07 西安电子科技大学 Copper oxide and cobaltosic oxide heterostructure nanowire composite sensitive material, ethylene glycol sensor and preparation method
CN113376191B (en) * 2021-06-08 2022-09-16 中国科学院上海应用物理研究所 In-situ-based device and method for high-throughput crystal culture and rapid sample loading
CN113433171B (en) * 2021-06-24 2022-11-22 兰州大学 Gas sensitive material, gas sensor and preparation method and application of gas sensitive material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1206021C (en) * 2003-09-16 2005-06-15 上海大学 Collosol gel production method of nano NiO material
CN106970117B (en) * 2017-03-27 2019-11-12 东北大学 A kind of NO based on electrode surface growth in situ nano-ZnO2Sensor

Also Published As

Publication number Publication date
CN107817279A (en) 2018-03-20

Similar Documents

Publication Publication Date Title
Yang et al. Ethanol gas sensor based on Al-doped ZnO nanomaterial with many gas diffusing channels
CN107817279B (en) A kind of NO based on electrode surface growth in situ NiO nano thin-film2Sensor
Sun et al. Electrospinning preparation of Pd@ Co3O4-ZnO composite nanofibers and their highly enhanced VOC sensing properties
Yan et al. Electrochemical deposition of ZnO nanostructures onto porous silicon and their enhanced gas sensing to NO2 at room temperature
Santra et al. ZnO nanowires grown on SOI CMOS substrate for ethanol sensing
CN101318703A (en) Tungstic oxide nano-wire and method for preparing tungstic oxide nano-wire ammonia sensitive sensor
CN106896142A (en) Acetone sensor, the preparation method and applications of the Ce doped In_2O_3 nano sensitive materials based on graded structure
CN108956715B (en) Au @ WO3Core-shell structure nanosphere and preparation method and application thereof
CN109052453B (en) ZnCo2O4/ZnO heterostructure composite gas sensitive material and preparation method thereof
CN108982599A (en) Porous silicon-base tungsten oxide film composite material gas sensor and its preparation method and application
CN105699440B (en) A kind of preparation method of tungsten oxide nanometer flower hydrogen gas sensor
CN109813769A (en) A kind of indium oxide base hydrogen gas sensor and preparation method thereof
CN107164839A (en) Formaldehyde sensitive material CdGa2O4 with hypersensitivity and selectivity and preparation method thereof
CN108918631B (en) Preparation method of MOFs/ZnO composite gas-sensitive film responding to CO through ultra-fast in-situ synthesis
CN111693579A (en) Hydrogen sulfide gas detection method and sensor based on nanosheet composite membrane
Li et al. NO2 sensing performance of p-type intermediate size porous silicon by a galvanostatic electrochemical etching method
CN106018496A (en) Method for preparing high-sensitivity low working temperature ethanol gas sensor element
Wu et al. Au modified ZnO nanowires for ethanol gas sensing
CN107884446B (en) Ethanol gas sensor based on multi-element metal oxide sensitive material
CN108205002B (en) L aFeO with high gas response and selectivity3Ethanol-based gas sensor element and method for manufacturing same
CN108680605A (en) A kind of WS2The preparation method of/graphene composite aerogel gas sensor
CN110615693B (en) Hydrogen sulfide gas sensing material, sensor, preparation method and use method
CN108152337B (en) LaFeO with high gas-sensitive performance3Ethanol-based gas sensor and preparation method thereof
CN114280111B (en) Cerium doped tungsten oxide composite material, hydrogen sulfide sensor and preparation method
CN103487472A (en) Gas sensitive element of metal oxide inverse opal structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: Shen Yanbai

Inventor after: Zhao Sikai

Inventor after: Li Tingting

Inventor after: Li Guodong

Inventor after: Wei Dezhou

Inventor after: Gao Shuling

Inventor after: Han Cong

Inventor before: Shen Yanbai

Inventor before: Zhao Sikai

Inventor before: Li Tingting

Inventor before: Li Guodong

Inventor before: Wei Dezhou

Inventor before: Gao Shuling

Inventor before: Han Cong

GR01 Patent grant
GR01 Patent grant