CN107799233A - A kind of method for preparing conductive film - Google Patents
A kind of method for preparing conductive film Download PDFInfo
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- CN107799233A CN107799233A CN201711026147.8A CN201711026147A CN107799233A CN 107799233 A CN107799233 A CN 107799233A CN 201711026147 A CN201711026147 A CN 201711026147A CN 107799233 A CN107799233 A CN 107799233A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
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Abstract
The invention discloses a kind of method for preparing conductive film, belong to conductive film production technical field.A kind of method for preparing conductive film is the described method comprises the following steps, is comprised the following steps：A. deposited metal layers of copper：5 10nm metal copper layer is deposited on ceramic wafer that is clean, drying；B. deposited graphite alkene layer：Using CVD deposited graphite alkene film layer, the thickness of the graphene film layer is 40~50 μm；In the CVD deposition process, carbon source is methane, and gas is that volume ratio is 2~5:1 H2With He mixed gas；The volume ratio of the methane and mixed gas is 8~10:1；C. dry：The obtained semi-finished product of step B are dried.Compared with prior art, the present invention is low with production cost, and preparation method is simple, the high advantage of light transmittance.
Description
Technical field
The present invention relates to a kind of method for preparing conductive film, belong to conductive film production technical field.
Background technology
With the development of science and technology, society is also more and more to the demand of new material.Material is human civilization progress
With the material base of development in science and technology, the renewal of material makes the life of people, and also there occurs great variety.At present, it is booming new
The transparent and conductive thin-film material of type is in liquid crystal display, touch-screen, smart window, solar cell, microelectronics, information sensing
The device even field such as military project, which is obtained for, to be widely applied, and is being penetrated into other sciemtifec and technical spheres.Due to thin film technique
It is closely related with multiple technologies, thus the scientists of every field are excited to film preparation and its interest of performance.
Conductive film is that a kind of energy is conductive, realizes the film of some specific electric functions, is widely used in display, touches
Touch in the electronic devices such as screen and solar cell.At present, as a kind of transparent and conducting semiconductor material tin indium oxide
(ITO）, it is widely used in film applications always.Transparent lead is prepared by using magnetron sputtering that ITO is deposited over the transparent substrate
Conductive film, transparent base include such as glass and polyethylene terephthalate（PET）Film etc..Because tin indium oxide has height
Electrical conductivity, high thang-kng rate, so as one of main material for preparing conductive film.But tin indium oxide conductive film makes
There is also some shortcomings during, including:(1) indium resource is less, causes price continuous rise so that ITO turns into increasingly high
Expensive material, such as spraying, pulsed laser deposition, plating.And indium oxide has certain toxicity, unreasonable easily cause is recycled
Environmental pollution.（2）Characteristic crisp ITO prevents it from meeting some new opplications (such as flexible flexible display, touch
Screen, organic solar batteries) performance requirement, be not suitable for the production of flexible electronic device of future generation.The two of graphene uniqueness
Crystal structure is tieed up, imparts its unique performance, research finds that graphene has excellent mechanical performance and excellent electrical property
Matter, the electron mobility of graphene is up to 15000cm2v under normal temperature-1s-1, and resistivity is only 10-6Ωcm.Graphene is being permitted
It is many-sided that there is more potential advantages, such as quality, robustness, pliability, chemical stability, infrared light transmission than tin indium oxide
Property and price etc..Therefore graphene is expected to replace tin indium oxide very much, for developing thinner, the conductive faster flexible electronic of speed
Device.
At present, the preparation method of graphene mainly has：Micromechanics stripping method, oxidation-reduction method, chemical vapour deposition technique, have
Machine molecule intercalation method etc..Chemical vapour deposition technique is used by Somani etc. from 2006, with camphanone (camphor) for presoma,
Graphene film is obtained on nickel foil, scientists achieve much obtains grinding for thickness controllable grapheme lamella in different matrix
Study carefully progress.By carrying out chemical etching on metallic matrix, graphene sheet layer is separated and is transferred on another matrix, and this is just
Eliminate complicated machinery or chemical treatment method and obtain the graphene sheet layer of high quality.The state such as South Korea and Japan adopts one after another
Big size graphene transparent conductive film has been prepared in this way, and desired main application fields are in flat-panel screens
On, serve as anode.Such as in new OLED（OLED）On exploitation, OLED has cost low, all solid state, main
Dynamic luminous, brightness height, contrast is high, visual angle is wide, fast response time, thickness of thin, low-voltage direct-current drive, are low in energy consumption, work temperature
Degree scope is wide, the features such as soft screen display can be achieved, and turns into the developing direction of future display technology.
The content of the invention
It is an object of the invention to provide a kind of new method for preparing conductive film, production cost is low, and method is simple, thoroughly
Light rate is high, and can produce the graphene conductive film of large area, disclosure satisfy that the demand of large-scale production.
In order to realize foregoing invention purpose, technical scheme is as follows：
A kind of method for preparing conductive film, comprises the following steps：
A. deposited metal layers of copper
5-10nm metal copper layer is deposited on ceramic wafer that is clean, drying；
B. deposited graphite alkene layer
Using CVD deposited graphite alkene film layer, the thickness of the graphene film layer is 40~50 μm；The CVD deposition
During, carbon source is methane, and gas is that volume ratio is 2~5:1 H2With He mixed gas；The methane and mixed gas
Volume ratio is 8~10:1；
C. dry
The obtained semi-finished product of step B are dried.
In step A, the method for the deposited metal layers of copper is magnetron sputtering method, background vacuum：5×10-5~2 × 10- 4Pa, 3~5Pa of sputtering pressure, 30~70 DEG C of underlayer temperature.
In step B, during the CVD deposited graphite alkene film layer, the temperature of deposition is 700~750 DEG C, deposition
Pressure is 1 × 10-4~2 × 10-4Pa。
In step C, the condition of the drying is that 5~10min is dried at 110~130 DEG C.
Beneficial effects of the present invention：
The present invention breaches the limitation of original technology, realizes small size of the graphene conductive film in laboratory to industry
Change the leap of the large scale application of application, compared with prior art, low with production cost, preparation method is simple, advantage, and this
Invention furthermore achieved that obtained conductive film visible light transmittance rate height, after testing, this hair by further parameter optimization
Light transmittance >=85% of bright obtained graphene conductive film, and surface cleaning is pollution-free, pliability is good, and image is shown clearly
Effect, it is adapted to large-scale production, there is preferable economic benefit and social benefit.
Embodiment
Embodiment 1
A kind of method for preparing conductive film, comprises the following steps：
A. deposited metal layers of copper
5nm metal copper layer is deposited on ceramic wafer that is clean, drying；
B. deposited graphite alkene layer
Using CVD deposited graphite alkene film layer, the thickness of the graphene film layer is 40 μm；The CVD deposition process
In, carbon source is methane, and gas is that volume ratio is 2:1 H2With He mixed gas；The volume ratio of the methane and mixed gas
For 8:1；
C. dry
The obtained semi-finished product of step B are dried.
In step A, the method for the deposited metal layers of copper is magnetron sputtering method, background vacuum：5×10-5Pa, sputtering pressure
Power 3Pa, 30 DEG C of underlayer temperature.
In step B, during the CVD deposited graphite alkene film layer, the temperature of deposition is 700 DEG C, the pressure of deposition
For 1 × 10-4Pa。
In step C, the condition of the drying is that 5min is dried at 110 DEG C.
Embodiment 2
A kind of method for preparing conductive film, comprises the following steps：
A. deposited metal layers of copper
10nm metal copper layer is deposited on ceramic wafer that is clean, drying；
B. deposited graphite alkene layer
Using CVD deposited graphite alkene film layer, the thickness of the graphene film layer is 50 μm；The CVD deposition process
In, carbon source is methane, and gas is that volume ratio is 5:1 H2With He mixed gas；The volume ratio of the methane and mixed gas
For 10:1；
C. dry
The obtained semi-finished product of step B are dried.
In step A, the method for the deposited metal layers of copper is magnetron sputtering method, background vacuum： 2×10-4Pa, sputtering
Pressure 5Pa, 70 DEG C of underlayer temperature.
In step B, during the CVD deposited graphite alkene film layer, the temperature of deposition is 750 DEG C, the pressure of deposition
For 2 × 10-4Pa。
In step C, the condition of the drying is that 10min is dried at 130 DEG C.
Embodiment 3
A kind of method for preparing conductive film, comprises the following steps：
A. deposited metal layers of copper
8nm metal copper layer is deposited on ceramic wafer that is clean, drying；
B. deposited graphite alkene layer
Using CVD deposited graphite alkene film layer, the thickness of the graphene film layer is 45 μm；The CVD deposition process
In, carbon source is methane, and gas is that volume ratio is 3:1 H2With He mixed gas；The volume ratio of the methane and mixed gas
For 9:1；
C. dry
The obtained semi-finished product of step B are dried.
In step A, the method for the deposited metal layers of copper is magnetron sputtering method, background vacuum： 2×10-4Pa, sputtering
Pressure 4Pa, 50 DEG C of underlayer temperature.
In step B, during the CVD deposited graphite alkene film layer, the temperature of deposition is 730 DEG C, the pressure of deposition
For 2 × 10-4Pa。
In step C, the condition of the drying is that 10min is dried at 115 DEG C.
Embodiment 4
A kind of method for preparing conductive film, comprises the following steps：
A. deposited metal layers of copper
10nm metal copper layer is deposited on ceramic wafer that is clean, drying；
B. deposited graphite alkene layer
Using CVD deposited graphite alkene film layer, the thickness of the graphene film layer is 50 μm；The CVD deposition process
In, carbon source is methane, and gas is that volume ratio is 4:1 H2With He mixed gas；The volume ratio of the methane and mixed gas
For 8:1；
C. dry
The obtained semi-finished product of step B are dried.
In step A, the method for the deposited metal layers of copper is magnetron sputtering method, background vacuum：5×10-5Pa, sputtering pressure
Power 5Pa, 60 DEG C of underlayer temperature.
In step B, during the CVD deposited graphite alkene film layer, the temperature of deposition is 740 DEG C, the pressure of deposition
For 2 × 10-4Pa。
In step C, the condition of the drying is that 10min is dried at 120 DEG C.
Claims (4)
- A kind of 1. method for preparing conductive film, it is characterised in that：Comprise the following steps：A. deposited metal layers of copper5-10nm metal copper layer is deposited on ceramic wafer that is clean, drying；B. deposited graphite alkene layerUsing CVD deposited graphite alkene film layer, the thickness of the graphene film layer is 40~50 μm；The CVD deposition During, carbon source is methane, and gas is that volume ratio is 2~5:1 H2With He mixed gas；The methane and mixed gas Volume ratio is 8~10:1；C. dryThe obtained semi-finished product of step B are dried.
- A kind of 2. method for preparing conductive film as claimed in claim 1, it is characterised in that：In step A, the deposited metal The method of layers of copper is magnetron sputtering method, background vacuum：5×10-5~2 × 10-4Pa, 3~5Pa of sputtering pressure, underlayer temperature 30 ~70 DEG C.
- A kind of 3. method for preparing conductive film as claimed in claim 1, it is characterised in that：In step B, the CVD is sunk During product graphene film layer, the temperature of deposition is 700~750 DEG C, and the pressure of deposition is 1 × 10-4~2 × 10-4Pa。
- A kind of 4. method for preparing conductive film as described in any one of claims 1 to 3, it is characterised in that：In step C, institute It is that 5~10min is dried at 110~130 DEG C to state dry condition.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711026147.8A CN107799233A (en) | 2017-10-27 | 2017-10-27 | A kind of method for preparing conductive film |
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| CN201711026147.8A CN107799233A (en) | 2017-10-27 | 2017-10-27 | A kind of method for preparing conductive film |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016139492A (en) * | 2015-01-26 | 2016-08-04 | 尾池工業株式会社 | Transparent conductive laminated body and method for producing the same |
| CN105931757A (en) * | 2016-06-24 | 2016-09-07 | 成都天航智虹企业管理咨询有限公司 | Method for preparing conductive thin film |
| CN105957646A (en) * | 2016-06-24 | 2016-09-21 | 成都天航智虹企业管理咨询有限公司 | Preparation method for conductive thin film |
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2017
- 2017-10-27 CN CN201711026147.8A patent/CN107799233A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016139492A (en) * | 2015-01-26 | 2016-08-04 | 尾池工業株式会社 | Transparent conductive laminated body and method for producing the same |
| CN105931757A (en) * | 2016-06-24 | 2016-09-07 | 成都天航智虹企业管理咨询有限公司 | Method for preparing conductive thin film |
| CN105957646A (en) * | 2016-06-24 | 2016-09-21 | 成都天航智虹企业管理咨询有限公司 | Preparation method for conductive thin film |
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Application publication date: 20180313 |
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