CN107785387A - Imaging sensor and the method for forming imaging sensor - Google Patents
Imaging sensor and the method for forming imaging sensor Download PDFInfo
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- CN107785387A CN107785387A CN201711004542.6A CN201711004542A CN107785387A CN 107785387 A CN107785387 A CN 107785387A CN 201711004542 A CN201711004542 A CN 201711004542A CN 107785387 A CN107785387 A CN 107785387A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
This disclosure relates to imaging sensor and the method for forming imaging sensor, one of which imaging sensor include：Substrate, formed with photodiode in the substrate；And light collecting part, the light collecting part are located on the substrate, wherein, the light collecting part has inclined-plane, and the light collecting part is configured to：The light for making that the peripheral region of the photodiode must be entered enters the light collecting part from the inclined-plane, and the light is reflected to the direction of the photodiode.This disclosure relates to imaging sensor and method for forming imaging sensor so that the region for the photodiode that more light enter in substrate, so as to improve the lightsensitivity of imaging sensor.
Description
Technical field
This disclosure relates to semiconductor applications, it particularly relates to which a kind of imaging sensor and one kind are used to form image
The method of sensor.
Background technology
Imaging sensor is used to the optical imagery focused on the image sensor being converted into electric signal.Imaging sensor bag
The array of photodiode is included, the photon of incident light reaches photodiode and absorbed afterwards and produce carrier, so as to produce
Electric signal.
Accordingly, there exist the demand for new technology to improve the lightsensitivity of imaging sensor.
The content of the invention
One purpose of the disclosure is to improve the lightsensitivity of imaging sensor.
According to an aspect of this disclosure, there is provided a kind of imaging sensor, including：Substrate, in the substrate formed with
Photodiode；And light collecting part, the light collecting part are located on the substrate, wherein, the light collecting part has inclined-plane, and described
Light collecting part is configured to：The light for the peripheral region for making that the photodiode must be entered enters the optically focused from the inclined-plane
Portion, and the light is reflected to the direction of the photodiode.
According to another aspect of the disclosure, there is provided a kind of method for forming imaging sensor, including：Lining is provided
Bottom, formed with photodiode in the substrate；First material layer is formed over the substrate；And by the first material layer
Pattern to form light collecting part, wherein, the light collecting part has inclined-plane, and the light collecting part is configured to：Make that institute must be entered
State the light of the peripheral region of photodiode and enter the light collecting part from the inclined-plane, and by the light to the photodiode
Direction refraction.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the further feature of the disclosure and excellent
Point will be made apparent from.
Brief description of the drawings
The accompanying drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
Referring to the drawings, according to following detailed description, the disclosure can be more clearly understood, wherein：
Fig. 1 is the schematic diagram for the structure for schematically showing imaging sensor of the prior art in sectional view.
Fig. 2 is the schematic diagram for schematically showing the transmission path of light splitting in the middle part of the imaging sensor in Fig. 1.
Fig. 3 is the imaging sensor for an exemplary embodiment for schematically showing the disclosure in sectional view
The schematic diagram of the transmission path of structure and wherein light.
Fig. 4 a are the schematic diagrames of an example of the transmission path of light at the inclined-plane B being shown schematically in Fig. 3.
Fig. 4 b are the schematic diagrames of an example of the transmission path of light at the interface E being shown schematically in Fig. 3.
Fig. 5 is the imaging sensor for an exemplary embodiment for schematically showing the disclosure in sectional view
The schematic diagram of the transmission path of structure and wherein light.
Fig. 6 is the imaging sensor for an exemplary embodiment for schematically showing the disclosure in sectional view
The schematic diagram of the transmission path of structure and wherein light.
Fig. 7 a are the schematic diagrames of an example of the transmission path of light at the inclined-plane D being shown schematically in Fig. 6.
Fig. 7 b are the schematic diagrames of an example of the transmission path of light at the interface E being shown schematically in Fig. 6.
Fig. 8 is the imaging sensor for an exemplary embodiment for schematically showing the disclosure in sectional view
The schematic diagram of the transmission path of structure and wherein light.
Fig. 9 a to 9f respectively illustrate to be formed in imaging sensor according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at each step of one method example.
Pay attention to, in embodiments described below, be used in conjunction with same reference between different accompanying drawings sometimes
Come the part for representing same section or there is identical function, and omit its repeat specification.In this manual, using similar mark
Number and letter represent similar terms, therefore, once be defined in a certain Xiang Yi accompanying drawing, then in subsequent accompanying drawing do not need pair
It is further discussed.
In order to make it easy to understand, position, size and scope of each structure shown in accompanying drawing etc. etc. does not indicate that reality sometimes
Position, size and scope etc..Therefore, disclosed invention is not limited to position, size and scope disclosed in accompanying drawing etc. etc..
In addition, it will be understood by those skilled in the art that the transmission path of the light shown in accompanying drawing is simply schematical, not structure
The limitation of any one in paired the following：The incident angles and positions of light, the angle of anaclasis, optical transport direction,
Density of the incident depth of light, the number of light transmission path and light etc..
Embodiment
Fig. 1 shows the structure of imaging sensor of the prior art.Imaging sensor of the prior art includes substrate
10, it is used to sense light formed with photodiode 11, wherein photodiode 11 in substrate 10.The pole of photoelectricity two in substrate 10
Peripheral region 12 around pipe 11, the light that will be sensed can be formed and be converted to device and circuit of electric signal etc..Image sensing
Device can also include on substrate 10 and limit the optics shielding portion 30 on the border of each photosensitive device of imaging sensor, should
Optics shielding portion 30 can form optics shielding between each photosensitive device of imaging sensor, to reduce incident light to neighbouring
Photosensitive device interference.
In order to improve lightsensitivity, imaging sensor of the prior art material also good including the use of translucency is in photoelectricity
The lenticule 40 that the top of diode 11 is formed.The upper surface of lenticule 40 is the arc to raise up so that the biography of incident light
Defeated path is changed into converges to centre, so that more light enter the region of photodiode 11.
Present inventor it has been investigated that, imaging sensor of the prior art, as shown in Fig. 2 even if having made
With lenticule 40 incident light is converged to centre, but still there is part light to incide photodiode 11 weeks in substrate 10
The peripheral region 12 enclosed, the transmission path for the light shown by dotted line L21, L22 seen in Fig. 2.
Present inventor also found through research, with the increase for the light quantity that photodiode receives, imaging sensor
Lightsensitivity can also improve.Because peripheral region 12 can not be used for sensing light, it is desirable to further reduce into week
Enclose the light in region 12 while increase the light into the region of photodiode 11.
It is described in detail the various exemplary embodiments of the disclosure below with reference to accompanying drawings.It should be noted that：Unless have in addition
Body illustrates that the unlimited system of part and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
The description only actually at least one exemplary embodiment is illustrative to be never used as to the disclosure below
And its application or any restrictions that use.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In the disclosure, the feature, structure or the spy that mean to combine embodiment description are referred to " one embodiment "
Property be included in the disclosure at least one embodiment in.Therefore, going out everywhere of the phrase " in one embodiment " in the disclosure
Now it is not necessarily referring to same embodiment., can in any suitable combination and/or subgroup in addition, in one or more embodiments
Close and come assemblage characteristic, structure or characteristic.
The image that Fig. 3,5,6 and 8 schematically show the exemplary embodiment of the disclosure in sectional view respectively passes
The transmission path of the structure of sensor and light therein.Although a photosensitive device is illustrate only in figure as an example, still originally
The imaging sensor of a disclosed exemplary embodiment includes multiple photosensitive devices, and generally, multiple photosensitive devices can be formed
Array.Because each photosensitive device in imaging sensor can use identical to construct, therefore in order to avoid fuzzy of the invention, this
A photosensitive device is all only shown and described in text.
As shown in figure 3, imaging sensor includes substrate 10 and light collecting part 50.
In certain embodiments, substrate 10 can be Semiconductor substrate, by any semiconductor for being suitable for semiconductor device
Material (Si, SiC, SiGe etc.) is made, and semi-conducting material can be intrinsic material or be doped with the half of impurity
Conductor material.In further embodiments, substrate 10 can also be that silicon-on-insulator (SOI), silicon germanium on insulator etc. are various multiple
Close substrate.Those skilled in the art understand that substrate is not any way limited, but can be selected according to practical application.Lining
Formed with photodiode 11 for sensing light in bottom 10.In substrate 10, domain of the existence is gone back around photodiode 11
12 (being referred to as " peripheral region " in the disclosure), it is conventionally formed with the light that will be sensed and is converted to device and circuit of electric signal etc..
Light collecting part 50 is located on substrate 10 and has inclined-plane, for example, inclined-plane C, D in inclined-plane A, B and Fig. 6 in Fig. 3.It is poly-
Light portion 50 is configured to：The light for the peripheral region 12 for making to enter around photodiode 11 enters poly- from inclined-plane A, B or C, D
Light portion 50, and these light are reflected to the direction of photodiode 11.
In certain embodiments, as shown in figure 3, light collecting part 50 and photodiode 11 are in the major surfaces in parallel with substrate 10
Plan in overlap.That is, projection and light of the light collecting part 50 in a plane with the major surfaces in parallel of substrate 10
The projection of electric diode 11 on this plane overlaps.It will be understood by those skilled in the art that coincidence is including partially overlapping and completely
Overlap.Inclined-plane A, B (i.e. the side surface of light collecting part 50) are downwardly and outwardly inclined, i.e., from the top surface of light collecting part 50 (or poly-
In the case that light portion 50 is without top surface as shown in Figure 3, summit or top margin since light collecting part 50), in vertical direction
Extend downwardly, and outwards (i.e. the direction away from photodiode 11) extension in the horizontal direction.Inclined-plane A, B base are positioned at week
Enclose in region 12, and inclined-plane A, B top margin or summit are located at the top on the border of photodiode 11 or positioned at the pole of photoelectricity two
The top in the region of pipe 11.It will be understood by those skilled in the art that " inclined-plane " refers to inclined surface, and plane is referred not only to, example
As it can also be the isoclinal surface of circular conical surface.Preferably, the inclined-plane of the light collecting part 50 in the disclosure, in imaging sensor
In sectional view linearly.
Light collecting part 50 with said structure so that (when i.e. imaging sensor does not include light collecting part 50) will enter light originally
The light (transmission path of the light with reference to shown by dotted line L21, L22 in figure 2) of peripheral region 12 around electric diode 11 from
Inclined-plane A, B enter light collecting part 50, and these light are reflected to the direction of photodiode 11, such as dotted line L31, L32 institute in Fig. 3
The transmission path of the light shown, and then more light are sensed by photodiode 11, to improve the photosensitive of imaging sensor
Sensitivity.
Although being shaped as the section of the light collecting part 50 shown in Fig. 3 is trapezoidal, it will be appreciated by a person skilled in the art that
The shape in the section of light collecting part 50 can also be other polygons (such as triangle etc.) and with circular arc figure (such as
The upper surface of light collecting part 50 illustrated in fig. 3 is replaced with into arc etc.) etc., as long as light collecting part 50 has inclined-plane and can will be from oblique
The light that face enters light collecting part 50 reflects to the direction of photodiode 11.
Fig. 4 a are the schematic diagrames of an example of the transmission path of light at the inclined-plane B being shown schematically in Fig. 3.Its
In, heavy black represents the interface (the inclined-plane B i.e. shown in Fig. 3) of two kinds of optical transmission mediums, and solid line with the arrow represents light two
Transmission path in kind transmission medium, chain-dotted line represent normal, and dotted line is the extended line of the transmission direction of incident light.In some realities
Apply in example, as shown in figure 3, being rolled over to reach the light for enter from inclined-plane A, B light collecting part 50 to the direction of photodiode 11
The effect penetrated is, it is necessary to which so that the refractive index of light collecting part 50 (or at least part of light collecting part 50 near inclined-plane A, B) is more than
The refractive index for the part being in contact with it on inclined-plane A, B.In this way, when light reflects from inclined-plane B into light collecting part 50, such as scheme
Shown in 4a, due to being to enter optically denser medium from optically thinner medium, its refraction angle r1 is less than incidence angle i1, so that the biography of incident light
Inside (i.e. towards the direction of photodiode 11) deviation is changed into defeated path so that and more light enter photodiode 11,
So as to improve the lightsensitivity of imaging sensor.Although Fig. 4 a merely illustrate an example of the transmission path of light at inclined-plane B, this
Art personnel are appreciated that at inclined-plane A that the transmission path of light is similar with shown in Fig. 4 a.
Fig. 4 b are the schematic diagrames of an example of the transmission path of light at the interface E being shown schematically in Fig. 3.Its
In, heavy black represents the interface (the interface E i.e. shown in Fig. 3) of two kinds of optical transmission mediums, and solid line with the arrow represents that light exists
Transmission path in two kinds of transmission mediums, chain-dotted line represent normal, and dotted line is the extended line of the transmission direction of incident light.At some
In embodiment, in order that the light from the entrance substrate 10 of light collecting part 50 is obtained not to external diffusion, to cause the photaesthesia of imaging sensor
Degree further improves, and the refractive index of light collecting part 50 (or at least part contacted with substrate 10 of light collecting part 50) is more than or waited
Refractive index in substrate 10 (or at least part contacted with light collecting part 50 of substrate 10).If refractive index of light collecting part 50 etc.
Refractive index in substrate 10 (or at least part contacted with light collecting part 50 of substrate 10), served as a contrast when light enters from light collecting part 50
During bottom 10, the transmission path of light does not change, i.e., light continues towards the direction biography of photodiode 11 as described previously
It is defeated, as shown in Figure 3.If the refractive index of light collecting part 50 is more than substrate 10, (or at least substrate 10 contacts with light collecting part 50
Part) refractive index, as shown in Figure 4 b, when light from light collecting part 50 enter substrate 10 when, due to being dredged from optically denser medium into light
Medium, its refraction angle r2 is more than incidence angle i2, so that the transmission path of incident light changes into inside deviation, shown in Fig. 3
Imaging sensor compare, enable to more light to enter photodiode 11, so that the photaesthesia of imaging sensor
Degree further improves.Although Fig. 4 b merely illustrate the transmission path of the interface E part light below the inclined-plane B one shows
Example, it will be understood by those skilled in the art that the interface E of light collecting part 50 and substrate 10 various pieces (such as interface E position
Part below inclined-plane A) light transmission path it is similar with shown in Fig. 4 b.
In certain embodiments, as shown in figure 3, light collecting part 50 can contact with substrate 10, i.e., in light collecting part 50 and substrate
Other optical transmission mediums are not present between 10, so that the light after the refraction of light collecting part 50 is directly over light collecting part 50 and lining
The interface E at bottom 10, and be no longer pass through the interface of other two kinds of optical transmission mediums, so as to avoid by light collecting part 50 to
The light of the direction refraction of photodiode 11 changes the transmission path of light by unnecessary refraction or reflection again.
In certain embodiments, the surface of light collecting part 50 could be formed with ARC, so that more luminous energy
Enough enter light collecting part 50 rather than reflected away by its surface so that more light enter photodiode 11, so that figure
As the lightsensitivity of sensor further improves.
In certain embodiments, as shown in figure 5, imaging sensor is except being included in the substrate 10 described in above example
Outside light collecting part 50, packed layer 20 can also be included.Packed layer 20 is located at the top of light collecting part 50 and covers light collecting part 50
Surface.As described above, to enter the light of light collecting part 50 to the side of photodiode 11 from the inclined-plane of light collecting part 50 to reach
To the effect of refraction, it is necessary to which so that the refractive index of light collecting part 50 (or at least part of light collecting part 50 near inclined-plane) is more than
The refractive index of packed layer 20 (or at least part contacted with light collecting part 50 of packed layer 20).In this way, work as light from light collecting part
50 inclined-plane into light collecting part 50 reflect when, the transmission path of incident light changes into inside deviation, as shown by dotted line L51
Light transmission path, so, it is possible so that more light enter photodiode 11, so as to improve the photosensitive of imaging sensor
Sensitivity.
In certain embodiments, packed layer 20 has colour filter function, to allow the light of particular range of wavelengths by so as to entering
Enter photodiode 11.Packed layer 20 with colour filter function can be made up of pigment or dye materials, and these materials can be permitted
Perhaps the light of some wavelength is passed through.In certain embodiments, can allow by feux rouges, blue light or green glow.In other implementations
In example, it can allow by cyan, yellow or wine-colored light.But these simply have the packed layer 20 of colour filter function
The example color that can be filtered, it will be understood by those skilled in the art that the packed layer 20 with colour filter function in the disclosure may be used also
To allow the light of other colors to pass through.In addition, the packed layer 20 with colour filter function can also be made up of other materials, such as can
Enough reflectorized materials for reflecting away the light of specific wavelength etc..
In certain embodiments, packed layer 20 has the function that flat upper surface is provided for structure disposed thereon.Fill out
Filling layer 20 can be formed by dielectric substance, for example, oxide or nitride etc..
In certain embodiments, as shown in figure 5, imaging sensor is except being included in the substrate 10 described in above example
Outside light collecting part 50, optics shielding portion 30 can also be included.Optics shielding portion 30 is located on substrate 10 and limits image sensing
The border of each photosensitive device of device, so as to form optics shielding between each photosensitive device of imaging sensor, to reduce
Interference of the incident light to neighbouring photosensitive device.In certain embodiments, optics shielding portion 30 is formed by reflectorized material.At some
In embodiment, optics shielding portion 30 can be formed by metal material, such as tungsten or copper.
Optics shielding portion 30 will reach the light on its surface (the particularly side surface in optics shielding portion 30) (such as dotted line L52 institutes
The transmission path of the light shown) it is internally reflected, more luminous energy is got at up to photodiode 11.In addition, for those processes
The reflection in optics shielding portion 30 still can not reach the light in the region of photodiode 11, and when inciding light collecting part 50, it is transmitted
The further inside deviation in path, the transmission path of the light as shown by dotted line L52, photoelectricity two can be reached so as to more increase light
The possibility of pole pipe 11.It can be seen that light collecting part 50 can act synergistically with optics shielding portion 30, with the imaging sensor shown in Fig. 3
Compare, enable to more light to enter photodiode 11, so that the lightsensitivity of imaging sensor further improves.
In certain embodiments, the outer of light collecting part 50 contacts with optics shielding portion 30, as shown in Figure 5.It can so use up
Amount avoids the light that will incide peripheral region 12 from being directly entered substrate 10 without light collecting part 50, can so as to increase light
Reach the possibility of photodiode 11 so that more light can incide photodiode 11.
In certain embodiments, the height of light collecting part 50 is less than or equal to the height in optics shielding portion 30, as shown in figure 5,
To ensure the optics shielding effect in optics shielding portion 30.
In certain embodiments, as shown in figure 5, imaging sensor is except being included in the substrate 10 described in above example
Outside light collecting part 50, the lenticule 40 positioned at the top of photodiode 11 can also be included.Pass through lenticule for those
40 convergence still can not reach the light in the region of photodiode 11, and when inciding light collecting part 50, its transmission path is further
Inside deviation, the transmission path of the light as shown by dotted line L51 can so as to more increase that light can reach photodiode 11
Can property.It can be seen that light collecting part 50 can act synergistically with lenticule 40, compared with the imaging sensor shown in Fig. 3, enable to more
More light enters photodiode 11, so that the lightsensitivity of imaging sensor further improves.
In certain embodiments, as shown in fig. 6, light collecting part 50 and peripheral region 12 are in the major surfaces in parallel with substrate 10
Overlapped in plan.That is, projection of the light collecting part 50 in a plane with the major surfaces in parallel of substrate 10 and around
The projection of region 12 on this plane overlaps.It will be understood by those skilled in the art that overlapping includes partially overlapping and being completely superposed.
Inclined-plane C, D (i.e. the side surface of light collecting part 50) are inwardly and downwardly tilted, i.e., from the summit of light collecting part 50 or top margin (or poly-
In the case that light portion 50 is without summit as shown in Figure 6 or top margin, since the top surface of light collecting part 50), in vertical direction
Extend downwardly, and extend internally in the horizontal direction.Inclined-plane C, D base are located at the boundary (not shown) of photodiode 11
Or in the region of photodiode 11 (as shown in Figure 6), and inclined-plane C, D top margin or summit are located at peripheral region 12
Top.It will be understood by those skilled in the art that " inclined-plane " refers to inclined surface, and plane is referred not only to, such as it can also be
The isoclinal surface of circular conical surface.Preferably, the inclined-plane of the light collecting part 50 in the disclosure, in straight in the sectional view of imaging sensor
Line.
Light collecting part 50 with said structure so that (when i.e. imaging sensor does not include light collecting part 50) will enter light originally
The light (transmission path of the light with reference to shown by dotted line L21, L22 in figure 2) of peripheral region 12 around electric diode 11 from
Inclined-plane C, D enter light collecting part 50, and these light are reflected to the direction of photodiode 11, such as dotted line L61, L62 institute in Fig. 6
The transmission path of the light shown, and then more light are sensed by photodiode 11, to improve the photosensitive of imaging sensor
Sensitivity.
Although the section of the light collecting part 50 shown in Fig. 6 is shaped as triangle, those skilled in the art can manage
Solution, the shape in the section of light collecting part 50 can also be other polygons (such as trapezoidal etc.) etc., as long as light collecting part 50 has tiltedly
Face simultaneously can reflect the light for entering light collecting part 50 from inclined-plane to the direction of photodiode 11.
Fig. 7 a are the schematic diagrames of an example of the transmission path of light at the inclined-plane D being shown schematically in Fig. 6.Its
In, heavy black represents the interface (the inclined-plane D i.e. shown in Fig. 6) of two kinds of optical transmission mediums, and solid line with the arrow represents light two
Transmission path in kind transmission medium, chain-dotted line represent normal, and dotted line is the extended line of the transmission direction of incident light.In some realities
Apply in example, as shown in fig. 6, being rolled over to reach the light for enter from inclined-plane C, D light collecting part 50 to the direction of photodiode 11
The effect penetrated is, it is necessary to which so that the refractive index of light collecting part 50 (or at least part of light collecting part 50 near inclined-plane C, D) is less than
The refractive index for the part being in contact with it on inclined-plane C, D.In this way, when light reflects from inclined-plane D into light collecting part 50, such as scheme
Shown in 7a, due to being to enter optically thinner medium from optically denser medium, its refraction angle r3 is more than incidence angle i3, so that the biography of incident light
Inside deviation is changed into defeated path so that more light enter photodiode 11, so as to improve the photaesthesia of imaging sensor
Degree.Although Fig. 7 a merely illustrate an example of the transmission path of light at inclined-plane D, it will be understood by those skilled in the art that inclined-plane C
The transmission path for locating light is similar with shown in Fig. 7 a.
Fig. 7 b are the schematic diagrames of an example of the transmission path of light at the interface E being shown schematically in Fig. 6.Its
In, heavy black represents the interface (the interface E i.e. shown in Fig. 6) of two kinds of optical transmission mediums, and solid line with the arrow represents that light exists
Transmission path in two kinds of transmission mediums, chain-dotted line represent normal, and dotted line is the extended line of the transmission direction of incident light.At some
In embodiment, in order that the light from the entrance substrate 10 of light collecting part 50 is obtained not to external diffusion, to cause the photaesthesia of imaging sensor
Degree further improves, and the refractive index of light collecting part 50 (or at least part contacted with substrate 10 of light collecting part 50) is more than or waited
Refractive index in substrate 10 (or at least part contacted with light collecting part 50 of substrate 10).If refractive index of light collecting part 50 etc.
Refractive index in substrate 10 (or at least part contacted with light collecting part 50 of substrate 10), served as a contrast when light enters from light collecting part 50
During bottom 10, the transmission path of light does not change, i.e., light continues towards the direction biography of photodiode 11 as described previously
It is defeated, as shown in Figure 6.If the refractive index of light collecting part 50 is more than substrate 10, (or at least substrate 10 contacts with light collecting part 50
Part) refractive index, as shown in Figure 7b, when light from light collecting part 50 enter substrate 10 when, due to being dredged from optically denser medium into light
Medium, its refraction angle r4 is more than incidence angle i4, so that the transmission path of incident light changes into inside deviation, shown in Fig. 6
Imaging sensor compare, enable to more light to enter photodiode 11, so that the photaesthesia of imaging sensor
Degree further improves.Although Fig. 7 b merely illustrate the transmission path of the interface E part light below the inclined-plane D one shows
Example, it will be understood by those skilled in the art that the interface E of light collecting part 50 and substrate 10 various pieces (such as interface E position
Part below inclined-plane C) light transmission path it is similar with shown in Fig. 7 b.
In certain embodiments, as shown in fig. 6, light collecting part 50 can contact with substrate 10, i.e., in light collecting part 50 and substrate
Other optical transmission mediums are not present between 10, so that the light after the refraction of light collecting part 50 is directly over light collecting part 50 and lining
The interface E at bottom 10, and be no longer pass through the interface of other two kinds of optical transmission mediums, so as to avoid by light collecting part 50 to
The light of the direction refraction of photodiode 11 changes the transmission path of light by unnecessary refraction or reflection again.
In certain embodiments, the surface of light collecting part 50 could be formed with ARC, so that more luminous energy
Enough enter light collecting part 50 rather than reflected away by its surface so that more light enter photodiode 11, so that figure
As the lightsensitivity of sensor further improves.
In certain embodiments, as shown in figure 8, imaging sensor is except being included in the substrate 10 described in above example
Outside light collecting part 50, packed layer 20 can also be included.Packed layer 20 is located at the top of light collecting part 50 and covers light collecting part 50
Surface.As described above, to enter the light of light collecting part 50 to the side of photodiode 11 from the inclined-plane of light collecting part 50 to reach
To the effect of refraction, it is necessary to which so that the refractive index of light collecting part 50 (or at least part of light collecting part 50 near inclined-plane) is less than
The refractive index of packed layer 20 (or at least part contacted with light collecting part 50 of packed layer 20).In this way, work as light from light collecting part
50 inclined-plane into light collecting part 50 reflect when, the transmission path of incident light changes into inside deviation, as shown by dotted line L81
Light transmission path, so, it is possible so that more light enter photodiode 11, so as to improve the photosensitive of imaging sensor
Sensitivity.
In certain embodiments, packed layer 20 has colour filter function, to allow the light of particular range of wavelengths by so as to entering
Enter photodiode 11.In certain embodiments, packed layer 20, which has, provides flat upper surface for structure disposed thereon
Function.The characteristic of packed layer 20 with colour filter function or with the function that flat upper surface is provided for structure disposed thereon
With above-described similar, therefore detailed description is omitted herein.
In certain embodiments, as shown in figure 8, imaging sensor is except being included in the substrate 10 described in above example
Outside light collecting part 50, optics shielding portion 30 can also be included.Position, function and the material in optics shielding portion 30 are with being described above
It is similar, therefore omit detailed description herein.
Optics shielding portion 30 will reach the light on its surface (the particularly side surface in optics shielding portion 30) (such as dotted line L82 institutes
The transmission path of the light shown) it is internally reflected, more luminous energy is got at up to photodiode 11.In addition, for those processes
The refraction of light collecting part 50 still can not reach the light in the region of photodiode 11, will when reaching the surface in optics shielding portion 30
Light, which is internally reflected, makes its transmission path further inside deviation, the transmission path of the light as shown by dotted line L82, so as to more increase
Light can reach the possibility of photodiode 11.It can be seen that light collecting part 50 can act synergistically with optics shielding portion 30, with figure
Imaging sensor shown in 6 is compared so that more light enter photodiode 11, so that the photaesthesia of imaging sensor
Degree further improves.
In certain embodiments, the outer of light collecting part 50 contacts with optics shielding portion 30, as shown in Figure 8.It can so use up
Amount avoids the light that will incide peripheral region 12 from being directly entered substrate 10 without light collecting part 50, can so as to increase light
Reach the possibility of photodiode 11 so that more light can incide photodiode 11.
In certain embodiments, the height of light collecting part 50 is less than or equal to the height in optics shielding portion 30, as shown in figure 8,
To ensure the optics shielding effect in optics shielding portion 30.
In certain embodiments, as shown in figure 8, imaging sensor is except being included in the substrate 10 described in above example
Outside light collecting part 50, the lenticule 40 positioned at the top of photodiode 11 can also be included.Pass through lenticule for those
40 convergence still can not reach the light in the region of photodiode 11, and when inciding light collecting part 50, its transmission path is further
Inside deviation, the transmission path of the light as shown by dotted line L81 can so as to more increase that light can reach photodiode 11
Can property.It can be seen that light collecting part 50 can act synergistically with lenticule 40, compared with the imaging sensor shown in Fig. 6 so that more
Light enters photodiode 11, so that the lightsensitivity of imaging sensor further improves.
In certain embodiments, the imaging sensor shown in Fig. 5 can be formed with following methods.Below in conjunction with Fig. 9 a extremely
Fig. 9 f are specifically described.It will be understood by those skilled in the art that the step in following description is simply schematical, one of them or
More steps or process can be omitted or increase according to practical application.
As illustrated in fig. 9, in certain embodiments, the method for forming imaging sensor has photoelectricity two including providing
The substrate 10 of pole pipe 11.The structure and type of photodiode 11 are simultaneously unrestricted, for example, photodiode 11 can be PN junction
Photodiode.Peripheral region 12 is also formed with around photodiode 11 in substrate 10, can be with peripheral region 12
Formation is converted to the light that photodiode 11 senses in device and circuit of electric signal etc..
As shown in figure 9b, the boundary for limiting each photosensitive device in imaging sensor over the substrate 10 forms optical panel
Cover portion 30.In certain embodiments, optics shielding portion 30 can be the metal grate formed by metal material.In some embodiments
In, metal grate can be by carrying out patterned process to the metal level of deposition to be formed.In further embodiments, may be used
With by deposition or growth non-metallic layer (such as semiconductor material layer or dielectric material layer) carry out patterned process,
Then gold is formed on the side surface (at least in side surface, top surface can also be included) of the non-metallic layer formed in patterned process
Belong to film, to form metal grate.
As is shown in fig. 9 c, first material layer 51 is formed over the substrate 10.First material can printing opacity (for example, the first material
Can be Si, SiO2Deng), and the refractive index of the first material is more than or equal to the refraction of the part being in contact with it of substrate 10
Rate.First material layer 51 can be for example, by chemical vapor deposition (CVD), physical vapour deposition (PVD) (PVD), ald
(ALD) or other suitable technologies are formed.In order to avoid or mitigate form first material layer 51 when to the optics that has been formed
The adverse effect of the other parts of shielding part 30 or imaging sensor, process warm is controlled when forming the processing of first material layer 51
Degree is less than or equal to 700 degrees Celsius.
As shown in figure 9d, first material layer 51 is patterned to form light collecting part 50, and causes the light collecting part 50 formed
Height be less than or equal to optics shielding portion 50 height.In certain embodiments, first material layer 51 is patterned to be formed
Light collecting part 50 is carried out by etching processing.Wherein, light collecting part 50 has inclined-plane, and light collecting part 50 is configured to：Making must
Enter light collecting part 50 into the light of the peripheral region 12 around photodiode 11 from inclined-plane, and by these light to photodiode
11 direction refraction.After light collecting part 50 is formed, ARC (not shown) can also be formed on the surface of light collecting part 50.
As shown in figure 9e, packed layer 20 is formed on light collecting part 50, and causes packed layer 20 to cover the surface of light collecting part 50.
Packed layer 20 can for example, by chemical vapor deposition (CVD), physical vapour deposition (PVD) (PVD), ald (ALD) or other
Suitable technology is formed.Packed layer 20 can printing opacity so that incident light enters light collecting part 50.Selective filling can be passed through
The material of layer 20 and the thickness of control packed layer 20 enable the printing opacity of packed layer 20.In certain embodiments, packed layer 20
There can be colour filter function.In further embodiments, packed layer 20 can be formed by dielectric substance.In addition, such as Fig. 9 e,
In the case of the construction of Fig. 3 and light collecting part illustrated in fig. 5 50, the material of Selective filling layer 20 causes the refractive index of packed layer 20
Less than the refractive index of light collecting part 50.In the case of the construction of the light collecting part 50 gone out as shown in Figure 6 and Figure 8, Selective filling layer 20
Material cause packed layer 20 refractive index be more than light collecting part 50 refractive index.
As shown in figure 9f, lenticule 40 is formed for each photosensitive device of imaging sensor.Lenticule 40 is located at photoelectricity two
The top of pole pipe 11.Although in the photosensitive device of the imaging sensor shown by Fig. 9 f, lenticule 40 is formed in the He of packed layer 20
On optics shielding portion 30, it will be understood by those skilled in the art that not including packed layer 20 or optics shielding in imaging sensor
In the case of portion 30, such as Fig. 3 or illustrated in fig. 6 situations, lenticule 40 can be formed on light collecting part 50 or substrate
On 10.
Although above method combination Fig. 9 a to Fig. 9 f are described and shown with the imaging sensor shown in Fig. 5,
But it is understood that the imaging sensor with other structures, such as the imaging sensor shown in Fig. 3,6 or 8 can be by
The method similar with above method is formed.
Although the imaging sensor of pixel region is only schematically shown in the accompanying drawing of the disclosure in sectional view
Structure, those skilled in the art can obtain the imaging sensor entirety involved by the disclosure based on the content that the disclosure is recorded
Structure and forming method.
" A or B " include " A and B " and " A or B ", rather than exclusively only wrap to word in specification and claim
Include " A " or only include " B ", unless otherwise specified.
Word "front", "rear", " top ", " bottom " in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word so used
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can with this institute
Those of description show or other are orientated in other different orientations and operated.
As used in this, word " exemplary " means " being used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
Preferable or favourable.Moreover, the disclosure is not by above-mentioned technical field, background technology, the content of the invention or embodiment
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance
Any small change caused by difference, environment influence and/or other factorses.Word " substantially " also allows by ghost effect, made an uproar
Caused by sound and the other actual Considerations being likely to be present in actual implementation with perfect or preferable situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element or node or feature together.As used herein
, unless otherwise expressly noted, " connection " means an element/node/feature with another element/node/feature in electricity
Above, mechanically, in logic or otherwise it is directly connected (or direct communication).Similarly, unless otherwise expressly noted,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or otherwise link to allow to interact, even if the two features may be not direct
Connection is also such.That is, " coupling " is intended to encompass the direct link of element or further feature and linked indirectly, including profit
With the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class numeral word does not imply order or sequence.
It should also be understood that the word of "comprises/comprising" one is as used herein, illustrate pointed feature, entirety, step be present
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or the one or more of the other feature of increase, entirety, step, behaviour
Work, unit and/or component and/or combinations thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the border between aforesaid operations is merely illustrative.Multiple operations
Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time
Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include the example below：
A kind of 1. imaging sensor, it is characterised in that including：
Substrate, formed with photodiode in the substrate；And
Light collecting part, the light collecting part are located on the substrate, wherein, the light collecting part has inclined-plane, and the light collecting part
It is configured to：The light that must enter the peripheral region of the photodiode is set to enter the light collecting part from the inclined-plane, and will
The light reflects to the direction of the photodiode.
2. the imaging sensor according to 1, it is characterised in that
The light collecting part overlaps with the photodiode in the plan of the major surfaces in parallel with the substrate,
The inclined-plane is downwardly and outwardly inclined, and the base on the inclined-plane is located at the peripheral region, and the inclined-plane
Top margin or summit are located at the top on the border of the photodiode or positioned at the tops in the region of the photodiode.
3. the imaging sensor according to 2, it is characterised in that also include：
Packed layer, the packed layer are located at the top of the light collecting part and cover the surface of the light collecting part,
Wherein, the refractive index of the packed layer is less than the refractive index of the light collecting part.
4. the imaging sensor according to 1, it is characterised in that
The light collecting part overlaps with the peripheral region in the plan of the major surfaces in parallel with the substrate,
The inclined-plane inwardly and downwardly tilts, and the base on the inclined-plane is located at the boundary of the photodiode or is located at
In the region of the photodiode, and the top margin on the inclined-plane or summit are located at the top of the peripheral region.
5. the imaging sensor according to 4, it is characterised in that also include：
Packed layer, the packed layer are located at the top of the light collecting part and cover the surface of the light collecting part,
Wherein, the refractive index of the packed layer is more than the refractive index of the light collecting part.
6. according to the imaging sensor described in 3 or 5, it is characterised in that the packed layer has colour filter function.
7. the imaging sensor according to 1, it is characterised in that the refractive index of the light collecting part is more than or equal to the lining
The refractive index of the part being in contact with it at bottom.
8. the imaging sensor according to 1, it is characterised in that the surface of the light collecting part is formed with ARC.
9. the imaging sensor according to 1, it is characterised in that also include：
Optics shielding portion, the optics shielding portion are located on the substrate and limit each sense in described image sensor
The border of electro-optical device,
Wherein, the outer of the light collecting part contacts with the optics shielding portion.
10. the imaging sensor according to 9, it is characterised in that the height of the light collecting part is less than or equal to the light
Learn the height of shielding part.
11. the imaging sensor according to 1, it is characterised in that also include：
Lenticule, the lenticule are located at the top of the photodiode.
A kind of 12. method for forming imaging sensor, it is characterised in that including：
Substrate is provided, formed with photodiode in the substrate；
First material layer is formed over the substrate；And
The first material layer is patterned to form light collecting part, wherein, the light collecting part has inclined-plane, and the optically focused
Portion is configured to：The light for the peripheral region for making that the photodiode must be entered enters the light collecting part from the inclined-plane, and
The light is reflected to the direction of the photodiode.
13. the method according to 12, it is characterised in that described to pattern the first material layer to form light collecting part
It is to be carried out by etching processing.
14. the method according to 13, it is characterised in that
The light collecting part overlaps with the photodiode in the plan of the major surfaces in parallel with the substrate,
The inclined-plane is downwardly and outwardly inclined, and the base on the inclined-plane is located at the peripheral region, and the inclined-plane
Top margin or summit are located at the top on the border of the photodiode or positioned at the tops in the region of the photodiode.
15. the method according to 14, it is characterised in that methods described also includes after the light collecting part is formed：
Packed layer is formed on the light collecting part, the packed layer covers the surface of the light collecting part,
Wherein, the refractive index of the packed layer is less than the refractive index of the first material layer.
16. the method according to 12, it is characterised in that
The light collecting part overlaps with the peripheral region in the plan of the major surfaces in parallel with the substrate,
The inclined-plane inwardly and downwardly tilts, and the base on the inclined-plane is located at the boundary of the photodiode or is located at
In the region of the photodiode, and the top margin on the inclined-plane or summit are located at the top of the peripheral region.
17. the method according to 16, it is characterised in that methods described also includes after the light collecting part is formed：
Packed layer is formed on the light collecting part, the packed layer covers the surface of the light collecting part,
Wherein, the refractive index of the packed layer is more than the refractive index of the first material layer.
18. according to the method described in 15 or 17, it is characterised in that the packed layer has colour filter function.
19. the method according to 12, it is characterised in that the refractive index of the first material layer is more than or equal to the lining
The refractive index of the part being in contact with it at bottom.
20. the method according to 12, it is characterised in that methods described also includes after the light collecting part is formed：
ARC is formed on the surface of the light collecting part.
21. the method according to 12, it is characterised in that methods described is also wrapped before the first material layer is formed
Include：
Optics shielding portion is formed over the substrate, and the optics shielding portion limits each sense in described image sensor
The border of electro-optical device,
Wherein, the outer of the light collecting part contacts with the optics shielding portion.
22. the method according to 21, it is characterised in that the height of the light collecting part is less than or equal to the optics shielding
The height in portion.
23. the method according to 21, it is characterised in that the temperature for forming the first material layer is less than or equal to 700
Degree Celsius.
24. the method according to 12, it is characterised in that methods described is additionally included in institute after the light collecting part is formed
The top for stating photodiode forms lenticule.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this area
Art personnel it should be understood that above example merely to illustrate, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out to embodiment without departing from the scope of the present disclosure and spirit.The scope of the present disclosure is limited by appended.
Claims (10)
- A kind of 1. imaging sensor, it is characterised in that including：Substrate, formed with photodiode in the substrate；AndLight collecting part, the light collecting part are located on the substrate, wherein, the light collecting part has inclined-plane, and the light collecting part is by structure Make for：The light that must enter the peripheral region of the photodiode is set to enter the light collecting part from the inclined-plane, and by described in Light reflects to the direction of the photodiode.
- 2. imaging sensor according to claim 1, it is characterised in thatThe light collecting part overlaps with the photodiode in the plan of the major surfaces in parallel with the substrate,The inclined-plane is downwardly and outwardly inclined, and the base on the inclined-plane is located at the peripheral region, and the top margin on the inclined-plane Or summit is located at the top on the border of the photodiode or positioned at the top in the region of the photodiode.
- 3. imaging sensor according to claim 2, it is characterised in that also include：Packed layer, the packed layer are located at the top of the light collecting part and cover the surface of the light collecting part,Wherein, the refractive index of the packed layer is less than the refractive index of the light collecting part.
- 4. imaging sensor according to claim 1, it is characterised in thatThe light collecting part overlaps with the peripheral region in the plan of the major surfaces in parallel with the substrate,The inclined-plane inwardly and downwardly tilts, and the base on the inclined-plane is located at the boundary of the photodiode or positioned at described In the region of photodiode, and the top margin on the inclined-plane or summit are located at the top of the peripheral region.
- 5. imaging sensor according to claim 4, it is characterised in that also include：Packed layer, the packed layer are located at the top of the light collecting part and cover the surface of the light collecting part,Wherein, the refractive index of the packed layer is more than the refractive index of the light collecting part.
- 6. the imaging sensor according to claim 3 or 5, it is characterised in that the packed layer has colour filter function.
- 7. imaging sensor according to claim 1, it is characterised in that the refractive index of the light collecting part is more than or equal to institute State the refractive index of the part being in contact with it of substrate.
- 8. imaging sensor according to claim 1, it is characterised in that the surface of the light collecting part is formed with anti-reflective coating Layer.
- 9. imaging sensor according to claim 1, it is characterised in that also include：Optics shielding portion, the optics shielding portion are located on the substrate and limit each photoreceptor cartridge in described image sensor The border put,Wherein, the outer of the light collecting part contacts with the optics shielding portion.
- 10. imaging sensor according to claim 9, it is characterised in that the height of the light collecting part is less than or equal to institute State the height in optics shielding portion.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109148502A (en) * | 2018-08-31 | 2019-01-04 | 德淮半导体有限公司 | Imaging sensor and forming method thereof, imaging device |
| CN109920810A (en) * | 2019-03-22 | 2019-06-21 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
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| US20030179457A1 (en) * | 2002-02-21 | 2003-09-25 | Hideki Dobashi | Image pickup apparatus |
| CN102881700A (en) * | 2012-09-18 | 2013-01-16 | 上海集成电路研发中心有限公司 | CMOS image sensor and manufacturing method thereof |
| CN104051475A (en) * | 2013-03-14 | 2014-09-17 | 采钰科技股份有限公司 | Solid-state imaging devices |
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|---|---|---|---|---|
| US20030179457A1 (en) * | 2002-02-21 | 2003-09-25 | Hideki Dobashi | Image pickup apparatus |
| CN102881700A (en) * | 2012-09-18 | 2013-01-16 | 上海集成电路研发中心有限公司 | CMOS image sensor and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109148502A (en) * | 2018-08-31 | 2019-01-04 | 德淮半导体有限公司 | Imaging sensor and forming method thereof, imaging device |
| CN109920810A (en) * | 2019-03-22 | 2019-06-21 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
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