CN107768385A - Display panel and display device - Google Patents

Abstract

The invention provides a display panel and a display device, and relates to the field of display technology. The display substrate includes a switch transistor and a drive transistor; the switch transistor and the drive transistor include: an active layer, including a first active layer in the switch transistor and a second active layer in the drive transistor; a gate arranged on the active layer Pole insulating layer, including the first gate insulating layer in the switching transistor and the second gate insulating layer in the driving transistor; the first gate insulating layer includes the first silicon nitride layer and the first silicon oxide layer; the second gate The electrode insulating layer only includes a second silicon oxide layer, and the thickness of the second silicon oxide layer is greater than that of the first silicon oxide layer; or, the second gate insulating layer includes a second silicon nitride layer and a second silicon oxide layer, and the second silicon oxide layer includes a second silicon nitride layer and a second silicon oxide layer. The thickness of the silicon dioxide layer is greater than that of the first silicon oxide layer, and the thickness of the second silicon nitride layer is smaller than that of the first silicon nitride layer. The present invention can satisfy the fast turn-on requirement of the switch transistor while achieving better definition of the gray scale.

Description

Display panel and display device

technical field

The present invention relates to the field of display technology, in particular to a display panel and a display device.

Background technique

Currently, a display panel using Low Temperature Poly-silicon (LTPS) technology includes a plurality of thin film transistors. According to the functions of the thin film transistors in the circuit, the types of thin film transistors include driving transistors, switching transistors and other types. thin film transistor. In the prior art, both the driving transistor and the switching transistor include a gate insulating layer, the gate insulating layers of the driving transistor and the switching transistor are formed at the same time, and the film settings of the gate insulating layers of the driving transistor and the switching transistor are basically the same, Thus, the subthreshold swing of the driving transistor is similar to that of the switching transistor. The subthreshold swing refers to an important parameter when the transistor works in the subthreshold state or when it is used as a logic switch. It can also be called the S factor. The S factor can be defined as: S=dVgs/d(log10Id), and the value of S Above is equal to the gate voltage increment ΔVgs required to change the drain current Id of the transistor by an order of magnitude, and the unit of the subthreshold swing can be [mV/decade] or [V/decade].

Among them, the smaller the subthreshold swing of the switching transistor is, the faster the turn-on speed of the switching transistor is; there is a certain correspondence between the gray scale of the organic light-emitting display panel and the drain current of the driving transistor, and the lower the subthreshold swing of the driving transistor is, the faster the switching transistor is. Larger, the driving transistor can more accurately control the gray scale of the organic light emitting display panel. In practical applications, in order to realize the requirement of fast turn-on of the switching transistor, the switching transistor needs a smaller sub-threshold swing. However, if the sub-threshold swing of the driving transistor is small, the gray scale of the organic light-emitting display panel will be difficult to define, which is not conducive to the adjustment of the gray scale of screen brightness by the driving transistor.

It can be seen that there is a contradiction between the sub-threshold swing of the driving transistor and the sub-threshold swing of the switching transistor, so it is very necessary to invent a solution to solve the contradiction between the two to further improve the quality of the organic light-emitting display panel.

Contents of the invention

Embodiments of the present invention provide a display panel and a display device, which can meet the requirement of fast turn-on of switching transistors while achieving better gray scale definition.

In a first aspect, an embodiment of the present invention provides a display panel comprising: a switching transistor and a driving transistor;

Switching and driving transistors include:

an active layer, the active layer includes a first active layer in the switch transistor and a second active layer in the drive transistor;

A gate insulating layer disposed on the active layer, the gate insulating layer includes a first gate insulating layer in the switching transistor and a second gate insulating layer in the driving transistor; the first gate insulating layer includes a first nitride nitride a silicon layer and a first silicon oxide layer, the first silicon oxide layer is disposed above the first active layer, and the first silicon nitride layer is disposed above the first silicon oxide layer;

Wherein, the second gate insulating layer only includes the second silicon oxide layer, and the thickness of the second silicon oxide layer is greater than the thickness of the first silicon oxide layer; or, the second gate insulating layer includes the second silicon nitride layer and the second silicon nitride layer. A silicon oxide layer, the second silicon oxide layer is disposed above the second active layer, the thickness of the second silicon oxide layer is greater than the thickness of the first silicon oxide layer, the second silicon nitride layer is disposed above the second silicon oxide layer, and the second silicon oxide layer is disposed above the second silicon oxide layer. The thickness of the silicon nitride layer is smaller than the thickness of the first silicon nitride layer.

In a second aspect, an embodiment of the present invention provides a display device, which includes the above display panel.

Embodiments of the present invention provide a display panel and a display device. The second gate insulating layer only includes a second silicon oxide layer, the thickness of the second silicon oxide layer is greater than that of the first silicon oxide layer, and the first gate insulating layer When the insulating layer includes the first silicon nitride layer and the first silicon oxide layer, the relative permittivity of the second gate insulating layer is smaller than that of the first gate insulating layer, thereby making the subthreshold swing of the driving transistor greater than the subthreshold swing of the switching transistor. Alternatively, the second gate insulating layer includes a second silicon nitride layer and a second silicon oxide layer, and the thickness of the second silicon nitride layer is smaller than that of the first silicon nitride layer. Therefore, the second gate insulating layer in the second gate insulating layer The proportion of the silicon dioxide layer is greater than the proportion of the first silicon oxide layer in the first gate insulating layer. Therefore, the proportion of the film layer with a smaller relative dielectric constant in the second gate insulating layer is larger, and the second gate insulating layer The relative dielectric constant of the pole insulating layer is smaller than that of the first gate insulating layer, so that the subthreshold swing of the driving transistor is greater than that of the switching transistor.

Because the sub-threshold swing of the driving transistor is large, the gray scale can be better defined, which is beneficial for the driving transistor to adjust the gray scale of screen brightness. At the same time, because the sub-threshold swing of the switching transistor is small, the turn-on speed of the switching transistor can be increased.

【Description of drawings】

In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. Those of ordinary skill in the art can also obtain other drawings based on these drawings without any creative effort.

Fig. 1 is a transfer characteristic curve diagram of a thin film transistor in the prior art;

FIG. 2 is a schematic cross-sectional view of a display panel provided by an embodiment of the present invention;

FIG. 3 is another schematic cross-sectional view of a display panel provided by an embodiment of the present invention;

FIG. 4 is another schematic cross-sectional view of a display panel provided by an embodiment of the present invention;

FIG. 5 is another schematic cross-sectional view of a display panel provided by an embodiment of the present invention;

FIG. 6 is another schematic cross-sectional view of a display panel provided by an embodiment of the present invention;

Fig. 7 is an exemplary diagram of a display device in an embodiment of the present invention.

【Detailed ways】

In order to better understand the technical solutions of the present invention, the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

It should be clear that the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

Terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used in the embodiments of the present invention and the appended claims, the singular forms "a", "said" and "the" are also intended to include the plural forms unless the context clearly indicates otherwise.

It should be understood that the term "and/or" used herein is only an association relationship describing associated objects, which means that there may be three relationships, for example, A and/or B, which may mean that A exists alone, and A and B exist simultaneously. B, there are three situations of B alone. In addition, the character "/" in this article generally indicates that the contextual objects are an "or" relationship.

The display panel includes sub-pixels distributed in an array, and each sub-pixel includes a light emitting device and a pixel circuit, and the pixel circuit includes a driving transistor and at least one switching transistor. For example, in the most basic pixel circuit, it includes a driving transistor and a switching transistor. The driving transistor works in the linear region (that is, the driving transistor is always in the on state), and the magnitude of the driving current is controlled by the gate voltage of the driving transistor. The transistor is used to drive the light-emitting device to emit light, and the magnitude of its driving current is used to adjust the light-emitting brightness of the light-emitting device, thereby controlling the gray scale. The source of the switching transistor is connected to the data line, and the drain is connected to the gate of the driving transistor. The switching transistor can be in an on state or in an off state. In the on state, the data line provides a gate voltage to the driving transistor through the switching transistor.

The inventors have found that the gate insulating layer of the driving transistor and the gate insulating layer of the switching transistor are formed at the same time with the same thickness, and the gate insulating layers of the two have the same film structure, so that the sub-layer of the driving transistor and the switching transistor Threshold swings are similar or roughly the same. Fig. 1 is the transfer characteristic graph of thin film transistor in the prior art, as shown in Fig. 1, the abscissa Vgs of the graph represents the voltage difference between the gate and the source of the thin film transistor, and the ordinate Ids of the graph represents thin film The current between the source and the drain of the transistor, the slope of the curve in the subthreshold region reflects the subthreshold swing of the thin film transistor, and the graph shown in Figure 1 reflects the existing Transfer characteristic curves of the drive transistor and the switching transistor. However, in order to realize the requirement of fast start-up of the switching transistor and the requirement of accurate control of the gray scale of the organic light-emitting display panel by the driving transistor, the switching transistor needs a smaller sub-threshold swing, and at the same time, the driving transistor needs a larger sub-threshold swing Therefore, it is necessary to improve the gate insulating layer of the driving transistor and the switching transistor to meet the requirements of both in the prior art.

In order to solve the above technical problems, embodiments of the present invention provide the following solutions.

An embodiment of the present invention provides a display panel, please refer to FIG. 2 , which is a schematic cross-sectional view of a display panel provided by an embodiment of the present invention. As shown in FIG. 2 , the display panel includes a switching transistor 10 and a driving transistor 20 .

The switching transistor 10 and the driving transistor 20 include:

The active layer includes the first active layer 101 in the switch transistor 10 and the second active layer 201 in the drive transistor 20;

The gate insulating layer disposed on the active layer, the gate insulating layer includes the first gate insulating layer 102 in the switching transistor 10 and the second gate insulating layer 202 in the driving transistor 20; the first gate insulating layer 102 Including a first silicon nitride layer 1021 and a first silicon oxide layer 1022, the first silicon oxide layer 1022 is disposed above the first active layer 101, the first silicon nitride layer 1021 is disposed above the first silicon oxide layer 1022, wherein , as shown in FIG. 2, the second gate insulating layer 202 only includes the second silicon oxide layer 2021, and the thickness of the second silicon oxide layer 2021 is greater than the thickness of the first silicon oxide layer 1022; or, as shown in FIG. 3, the figure 3 is another schematic cross-sectional view of the display panel provided by the embodiment of the present invention, the second gate insulating layer 202 includes a second silicon nitride layer 2022 and a second silicon oxide layer 2021, and the second silicon oxide layer 2021 is disposed on the second Above the second active layer 201, the second silicon nitride layer 2022 is disposed above the second silicon oxide layer 2021, the thickness of the second silicon oxide layer 2021 is greater than the thickness of the first silicon oxide layer 1022, and the thickness of the second silicon nitride layer 2022 The thickness is smaller than the thickness of the first silicon nitride layer 1021 .

In the embodiment of the present invention, in order to meet the fast turn-on requirement of the switching transistor while achieving better gray scale definition, the subthreshold swing of the driving transistor can be increased. The range of the difference between the threshold swings is (0,0.5v/decsde]. Generally, in order to ensure the fast turn-on of the switching transistor, the range of the sub-threshold swing of the switching transistor is 0.2v/decsde～0.4v/ decsde. Moreover, when the sub-threshold swing of the driving transistor is within the value range of the above-mentioned sub-threshold swing, it has good characteristics, such as more accurate control of the gray scale of the organic light-emitting display panel.

It should be noted that if the difference between the subthreshold swing of the driving transistor and the subthreshold swing of the switching transistor is greater than 0.5v/decsde, the subthreshold swing of the driving transistor is relatively large. When the subthreshold swing of the driving transistor is compared When it is large, it will cause the current of the driving transistor to increase in the off state, thereby reducing the switching ratio of the driving transistor, and the reduction of the switching ratio of the driving transistor will cause the dark state of the organic light-emitting diode (that is, not emitting light) to be dark enough, thus affecting display effect. Wherein, the switching ratio of the driving transistor refers to the ratio between the current in the on state and the current in the off state.

It should be noted that the formula for the subthreshold swing of a thin film transistor is as follows:

Wherein, SS represents the sub-threshold swing of the thin film transistor, as shown in the formula, SS is inversely correlated with C _ox , and the value of SS becomes smaller as the value of C _ox increases. Among them, C _ox represents the film capacitance of the gate insulating layer. The size of C _ox depends on the film material of the gate insulating layer. C _ox is proportional to the relative permittivity of the gate insulating layer. At the same time, the gate insulating layer The thicker the thickness of the film layer, the smaller the value of C _ox , therefore, for a gate insulating layer with one film layer, when the relative dielectric constant of the gate insulating layer is larger and the film thickness is smaller , the smaller the value of SS, the smaller the relative dielectric constant of the gate insulating layer and the larger the film thickness, the larger the value of SS.

Based on the above description, in the above-mentioned possible implementation, the second gate insulating layer 202 only includes the second silicon oxide layer 2021, the thickness of the second silicon oxide layer 2021 is greater than the thickness of the first silicon oxide layer 1022, and the second A gate insulating layer 102 includes a first silicon nitride layer 1021 and a first silicon oxide layer 1022, and when the materials of the two stacked film layers are different, the C _ox of the stacked two film layers is smaller than any one of them The C _ox of the film layer, wherein, the relative dielectric constant of silicon oxide is 4.2, and the relative dielectric constant of silicon nitride is 7. Therefore, according to the inverse correlation between SS and C _ox , the subthreshold value of the driving transistor can be known The swing is larger than the sub-threshold swing of the switching transistor. Due to the large sub-threshold swing of the driving transistor, the gray scale can be better defined, which is beneficial for the driving transistor to adjust the gray scale of the screen brightness. At the same time, due to the sub-threshold swing of the switching transistor Smaller, can increase the turn-on speed of the switching transistor.

Or, based on the above description, in another possible implementation above, the second gate insulating layer 202 includes a second silicon nitride layer 2022 and a second silicon oxide layer 2021, and the thickness of the second silicon nitride layer 2022 is less than The thickness of the first silicon nitride layer 1021, therefore, the proportion of the thickness of the second silicon oxide layer 2021 in the second gate insulating layer 202 is greater than the proportion of the first silicon oxide layer 1022 in the first gate insulating layer 102. ratio, that is, the proportion of the thickness of the film layer with a smaller relative permittivity in the second gate insulating layer 202 is larger, so that the sub-threshold swing of the driving transistor is larger than that of the switching transistor, because the driving transistor The sub-threshold swing of the switch transistor is larger, which can better define the gray scale, which is beneficial to the drive transistor to adjust the gray scale of the screen brightness. At the same time, because the switch transistor has a small sub-threshold swing, the turn-on speed of the switch transistor can be increased.

It should be noted that, in the above-mentioned possible implementation, the second gate insulating layer 202 only includes the second silicon oxide layer 2021, and the film-forming power of silicon oxide is lower than that of silicon nitride. Compared with silicon nitride, the generated surface particles are also less. Therefore, when increasing the sub-threshold swing of the driving transistor, it is preferable to only use silicon oxide material to make the second gate insulating layer 202 . Among them, silicon oxide and silicon nitride are formed by chemical vapor deposition, and the film forming power refers to the power set by the machine that realizes chemical vapor deposition during film formation. The greater the film-forming power, the easier it is to cause local arc discharge, which leads to the formation of surface particles different from the normal film layer. The surface particles will affect the film-forming quality of the film layer and cause dotted lines in the subsequent production of display devices. Therefore, the more particles on the surface, the greater the risk of causing defects.

Moreover, in one possible implementation above, the second gate insulating layer 202 only includes the second silicon oxide layer 2021, and the thickness of the second silicon oxide layer 2021 is greater than the thickness of the first silicon oxide layer 1022, because the second The gate insulating layer 202 does not contain a silicon nitride layer, and if the thickness of the second gate insulating layer of the driving transistor 20 is the same as that of the first gate insulating layer of the switching transistor, it is conducive to the smooth coverage of the film layer above the gate. Therefore, in order to make the thicknesses of the two gate insulating layers the same, when the second gate insulating layer 202 does not contain a silicon nitride layer, it is necessary to increase the thickness of the silicon oxide layer, that is, to increase the thickness of the silicon oxide layer. The thickness of the second silicon oxide layer 2021 is large.

Further, in a feasible implementation, when the second gate insulating layer 202 only includes the second silicon oxide layer 2021, the sum of the thickness of the first silicon oxide layer 1022 and the thickness of the first silicon nitride layer 1021 It is equal to the thickness of the second silicon oxide layer 2021 , that is, the second gate insulating layer 202 is equal to the thickness of the first gate insulating layer 102 .

In the prior art, the thickness of the gate insulating layer of the driving transistor is greater than that of the switching transistor. Please refer to FIG. 4 , which is another schematic cross-sectional view of the display panel provided by the embodiment of the present invention, as shown in 4, compared with the prior art in this embodiment of the present invention, the thickness of the gate insulating layer (the second gate insulating layer 202 in FIG. 4 ) of the driving transistor is smaller. The thickness of the gate insulating layer is equal to the thickness of the first gate insulating layer, or, by setting the thickness of the second gate insulating layer smaller than the thickness of the first gate insulating layer, thereby ensuring that the subthreshold swing of the driving transistor is relatively large , while the sub-threshold swing of the switching transistor is small, the gate of the driving transistor (the gate 203 in FIG. 4 ) induces more charges in the channel, which is more conducive to the conduction of the transistor. In addition, if the thickness of the gate insulating layer of the driving transistor is the same as that of the switching transistor, the film layer above the gate can be covered evenly, and the film layer has better flatness. In order to better achieve this technical effect, the thickness of the corresponding film layer can be set to the following range: when the second gate insulating layer 202 only includes the second silicon oxide layer 2021, the thickness of the second silicon oxide layer 2021 can be 80nm ˜300 nm, correspondingly, the thickness of the first silicon oxide layer 1022 may be 40 nm˜260 nm, and the thickness of the first silicon nitride layer 1021 may be 40 nm˜260 nm.

In another feasible implementation, when the second gate insulating layer 202 includes the second silicon nitride layer 2022 and the second silicon oxide layer 2021, the thickness of the first silicon nitride layer 1021 is greater than that of the second silicon nitride layer The thickness of 2022, the difference between the thickness of the first silicon nitride layer 1021 and the thickness of the second silicon nitride layer 2022 ranges from 10 nm to 150 nm. The thickness of the second silicon oxide layer 2021 is greater than the thickness of the first silicon oxide layer 1022 , and the difference between the thickness of the second silicon oxide layer 2021 and the thickness of the first silicon oxide layer 1022 ranges from 10 nm to 150 nm.

It should be noted that if the difference between the thickness of the first silicon nitride layer 1021 and the thickness of the second silicon nitride layer 2022 is less than 10 nm, the difference between the driving transistor and the switching transistor in the sub-threshold swing is relatively small, and the driving The subthreshold swing of the transistor does not increase significantly. If the difference between the thickness of the first silicon nitride layer 1021 and the thickness of the second silicon nitride layer 2022 is greater than 150nm, plus the thickness of the first silicon oxide layer, the gate insulating layer of the switching transistor will be damaged. The overall thickness will be relatively large, and a thicker gate insulating layer will result in less charge induced by the gate in the channel, which is not conducive to the conduction of the transistor.

In a feasible implementation, in the embodiment of the present invention, the doping concentration of the channel region in the second active layer 201 is lower than the doping concentration of the channel region in the first active layer 101 .

In a specific embodiment, the doping concentration of the channel region in the second active layer 201 is 1×10 ¹¹ /cm ³ to 1×10 ¹² /cm ³ , and the channel region in the first active layer 101 The doping concentration is 2×10 ¹¹ /cm ³ to 4×10 ¹² /cm ³ . Before the active layer is doped, the P-type conductive particles (holes) in the active layer are mostly. If the doping concentration is small, for example, the doping concentration is less than 1×10 ¹¹ /cm ³ , the active layer There are still many P-type conductive particles in the thin film transistor, which will cause a large dark state current of the thin film transistor, resulting in a brighter dark state of the screen; if the doping concentration is large, for example, the doping concentration is greater than 4×10 ¹² /cm ³ , There are more N-type conductive particles (electrons) in the active layer, resulting in a smaller on-state current of the thin film transistor, resulting in a darker bright state of the screen, which is not conducive to normal lighting of the screen.

In a specific embodiment, the doping material of the channel region in the second active layer 201 and the channel region in the first active layer 101 is boron ions.

It should be noted that the sub-threshold swing of a thin film transistor is inversely proportional to the polysilicon defect density in the channel region, so by adjusting the doping concentration, the doping concentration of the driving transistor can be different from that of other thin film transistors. If the doping concentration of the channel region in the second active layer 201 is lower than the doping concentration of the channel region in the first active layer 101, the polysilicon defect density in the channel region of the driving transistor can be made smaller than that of the channel region of the switching transistor. The polysilicon defect density in the channel region makes the subthreshold swing of the driving transistor larger than that of the switching transistor. Because the subthreshold swing of the driving transistor is larger, the gray scale can be better defined, which is conducive to the adjustment of the driving transistor. Screen brightness gray scale, at the same time, because the sub-threshold swing of the switching transistor is small, the turn-on speed of the switching transistor can be increased.

In a feasible implementation, both the first active layer 101 and the second active layer 201 shown in FIG. 2 are made of low temperature polysilicon material.

It should be noted that, in order to adapt to the different requirements of thin film transistors for subthreshold swings in practical applications of display panels, the above technical solution involves adjusting the size of the subthreshold swings of thin film transistors by adjusting the doping of the active layer. . The active layers involved in the embodiments of the present invention are all made of low-temperature polysilicon materials, and low-temperature polysilicon materials are easier to use doping technology to adjust the size of the sub-threshold swing, that is, it is easier to control the concentration of doping and the The doped material makes it easier to adjust the size of the subthreshold swing, more convenient to produce thin film transistors with different subthreshold swings, reduces the production cost, and improves the production efficiency.

As shown in FIG. 2, the switching transistor 10 and the driving transistor 20 may also include:

a first metal layer disposed on the gate insulating layer;

an interlayer insulating layer 30 disposed on the first metal layer;

a second metal layer disposed on the interlayer insulating layer;

Wherein, the first metal layer includes the gate 103 in the switch transistor 10 and the gate 203 in the drive transistor 20;

The second metal layer includes the source 104 and the drain 105 in the switching transistor 10 , and the source 204 and the drain 205 in the driving transistor 20 .

Please refer to FIG. 5, which is another schematic cross-sectional view of the display panel provided by the embodiment of the present invention. As shown in FIG. 5, when the second gate insulating layer 20 only includes the second silicon oxide layer, the second gate The orthographic projection of the insulating layer 20 on the display panel coincides with the orthographic projection of the gate 203 of the driving transistor 20 on the display panel. That is to say, the part of the second gate insulating layer 20 covered by the gate 203 in the driving transistor 20 is only the second silicon oxide layer 2021 , except the second gate insulating layer covered by the gate 203 in the driving transistor 20 Other gate insulating layers other than 20 include a second silicon nitride layer 2022 and a third silicon oxide layer 2023, the third silicon oxide layer 2023 is disposed on the second active layer 201, and the second silicon nitride layer 2022 is disposed on the second over the silicon trioxide layer 2023 . That is, in the driving transistor 20, only the part of the second gate insulating layer 202 covered by the gate 203 is set to be pure silicon oxide, and the other part of the second gate insulating layer 202 can still be a silicon oxide layer and nitride The mixed film layer composed of silicon layer adopts this design, while adjusting the sub-threshold swing characteristic of the drive transistor 20, it does not affect the film structure of the rest of the gate insulating layer, which can reduce the influence on the original film layer characteristics. influences.

For example, in the embodiment of the present invention, the driving transistor 20 may be N-type, and the switching transistor may be P-type.

Please refer to FIG. 6, which is another schematic cross-sectional view of a display panel provided by an embodiment of the present invention. As shown in FIG. 6, the display panel further includes a substrate 40 and a buffer layer 50; The source layer is disposed on a side of the buffer layer 50 away from the substrate 40 .

As shown in FIG. 6 , the display panel further includes a planarization layer 60 and an organic light-emitting functional layer, and the planarization layer 60 is disposed on a side of the second metal layer away from the substrate 40 . The organic light-emitting functional layer may include a plurality of organic light-emitting elements (only one organic light-emitting element is taken as an example in FIG. 6 ), such as the first organic light-emitting element 701 shown in FIG. 6 . The first organic light emitting element 701 includes a cathode 7011, an anode 7012, and an organic light emitting layer 7013 disposed between the cathode 7011 and the anode 7012, and also includes a pixel definition layer 80 disposed between the first cathode 7011 and the anode 7012. Wherein, the anode 7012 is electrically connected to the drain 205 of the thin film transistor through a via hole.

The embodiment of the present invention also provides a display device. Please refer to FIG. 7 , which is an example diagram of the display device in the embodiment of the present invention. As shown in FIG. 7 , the display device may include the display panel 100 provided in the above embodiment. It should be noted that FIG. 7 uses a mobile phone as an example for an example, but the display device is not limited to a mobile phone. Specifically, the display device may include but is not limited to a personal computer (Personal Computer, PC), a personal digital assistant ( PersonalDigital Assistant, PDA), wireless handheld devices, tablet computers (Tablet Computer), MP4 players or televisions and other electronic devices with display functions.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (13)

1. a kind of display panel, it is characterised in that including switching transistor and driving transistor；

The switching transistor and the driving transistor include：

Active layer, the active layer include second in the first active layer and the driving transistor in the switching transistor Active layer；

The gate insulator being arranged on the active layer, the gate insulator include the first grid in the switching transistor Second grid insulating barrier in pole insulating barrier and the driving transistor；The first grid insulating barrier includes the first silicon nitride layer With the first silicon oxide layer, first silicon oxide layer is arranged on above first active layer, and first silicon nitride layer is set Above first silicon oxide layer；

Wherein, the second grid insulating barrier only includes the second silicon oxide layer, and the thickness of second silicon oxide layer is more than described The thickness of first silicon oxide layer；It is described or the second grid insulating barrier includes the second silicon nitride layer and the second silicon oxide layer Second silicon oxide layer is arranged on above second active layer, and second silicon nitride layer is arranged on second silicon oxide layer Side, the thickness of second silicon oxide layer are more than the thickness of first silicon oxide layer, and the thickness of second silicon nitride layer is small In the thickness of first silicon nitride layer.

2. display panel according to claim 1, it is characterised in that the second grid insulating barrier only includes the second oxidation During silicon layer, the thickness sum of the thickness of first silicon oxide layer and first silicon nitride layer is equal to second silicon oxide layer Thickness.

3. display panel according to claim 1, it is characterised in that the second grid insulating barrier includes the second silicon nitride Layer and during the second silicon oxide layer, difference between the thickness of the thickness of first silicon nitride layer and second silicon nitride layer Scope is 10nm~150nm.

4. display panel according to claim 1, it is characterised in that the second grid insulating barrier includes the second silicon nitride Layer and during the second silicon oxide layer, difference between the thickness of the thickness of second silicon oxide layer and first silicon oxide layer Scope is 10nm~150nm.

5. display panel according to claim 1, it is characterised in that the doping of channel region is dense in second active layer Degree is less than the doping concentration of channel region in first active layer.

6. display panel according to claim 5, it is characterised in that the doping of channel region is dense in second active layer Spend for 1E11/cm³~1E12/cm³；

The doping concentration of channel region is 2E11/cm in first active layer³~4E12/cm³。

7. display panel according to claim 5, it is characterised in that channel region and described in second active layer The dopant material of channel region is boron ion in one active layer.

8. display panel according to claim 1, it is characterised in that the switching transistor and driving transistor are also wrapped Include：

The first metal layer being arranged on the gate insulator；

The interlayer insulating film being arranged on the first metal layer；

The second metal layer being arranged on the interlayer insulating film；

Wherein, the first metal layer includes the grid in the grid and the driving transistor in the switching transistor；

The second metal layer includes source electrode and drain electrode, the source electrode in the driving transistor and leakage in the switching transistor Pole.

9. display panel according to claim 8, it is characterised in that the second grid insulating barrier only includes the second oxidation During silicon layer, the grid of the orthographic projection of the second grid insulating barrier on said display panel and the driving transistor is described Orthographic projection on display panel overlaps.

10. display panel according to claim 1, it is characterised in that first active layer and second active layer It is made using low-temperature polysilicon silicon materials.

11. display panel according to claim 1, it is characterised in that the driving transistor is N-type.

12. display panel according to claim 1, it is characterised in that the display panel also includes organic luminescence function Layer, the organic luminescence function layer include multiple organic illuminating elements.

13. a kind of display device, it is characterised in that the display device includes any described display in claim 1~12 Panel.