CN107761053A - Preparation method of large area Raman enhancing substrate and products thereof and application - Google Patents
Preparation method of large area Raman enhancing substrate and products thereof and application Download PDFInfo
- Publication number
- CN107761053A CN107761053A CN201711014808.5A CN201711014808A CN107761053A CN 107761053 A CN107761053 A CN 107761053A CN 201711014808 A CN201711014808 A CN 201711014808A CN 107761053 A CN107761053 A CN 107761053A
- Authority
- CN
- China
- Prior art keywords
- large area
- substrate
- preparation
- nano thin
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The present invention, which provides a kind of preparation method of large area Raman enhancing substrate and products thereof and application, methods described, to be included：One layer of Ag nano thin-film is prepared using magnetron sputtering cosputtering in smooth glass or monocrystalline silicon piece substrate, and prepares one layer of Al using ald on this basis2O3Nano thin-film, recycle magnetron sputtering to prepare one layer of Ag nano thin-film on this technology, then carry out short annealing processing under nitrogen protection, finally prepare one layer of Al using ald on this basis again2O3Nano thin-film.Preparation technology of the present invention is simple, and the Raman enhancing effect of its product is excellent, and is suitable for large area preparation.
Description
Technical field
Field, more particularly to a kind of large area Raman enhancing substrate are prepared and tested and analyzed the invention belongs to nano thin-film
Preparation method and products thereof and application.
Background technology
Raman scattering is a kind of scattering phenomenon of light, is photon and testing molecule interaction, hair when monochromatic incident light
Raw inelastic collision, occurs energy exchange between photon and molecule, photon changes the scattering that the direction of motion and frequency are occurred and drawn
Graceful scattering spectrum turns into the powerful molecular detection technology of One function due to its specificity to molecule and chemical bond oscillations peak.
Due to the very small scattering cross section of Raman scattering, Raman scattering is a very weak process, and is unfavorable for determining for micro substance
Property analysis.Can it be the practical key of raman scattering spectrum Detection Techniques that scattering enhancing be made.Fleischman observations in 1974
It can be increased substantially to the Raman diffused light spectral intensity for being attached to textured metal micro-nano structure surface molecular, be referred to as surface enhanced
Raman scattering（Surface-enhanced Raman Scattering, abbreviation SERS）.SERS（SERS）It is
A kind of enhancement effect with surface selectivity, the Raman signal adsorbed in the molecule of material surface can be amplified several quantity
Level, overdelicate detection can be reached in the fields such as analysis, environment and catalysis.Common SERS includes thick
Rough silverskin, golden nanometer particle, Nano silver grain, golden contracted payment nano-particle etc..Using nanogold, Ag colloid particle, exist emphatically
Renaturation is poor, it is impossible to the shortcomings of prepared by large area.
The content of the invention
For overcome the deficiencies in the prior art, present invention aims at：A kind of preparation of large area Raman enhancing substrate is provided
Method.
Another object of the present invention is：Large area Raman enhancing substrate product obtained above is provided.
A further object of the present invention is：The application of the said goods is provided.
The object of the invention is achieved through the following technical solutions：A kind of preparation method of large area Raman enhancing substrate, is utilized
Magnetron sputtering and technique for atomic layer deposition are combined, and are comprised the steps of：
（1）The thick Ag nano thin-films of 60-100nm are prepared in smooth glass or monocrystalline silicon piece substrate using magnetron sputtering；
（2）One layer of 2-8nm thickness Al is further prepared in above-mentioned substrate using ald2O3Nano thin-film；
（3）Again further 40-60nm thickness Ag nano thin-films are prepared in above-mentioned substrate using magnetron sputtering；
（4）By above-mentioned substrate under nitrogen atmosphere, short annealing is carried out；
（5）1-5nm thickness Al is further prepared in the substrate after the return of goods using ald2O3Nano thin-film.
The present invention is combined using magnetron sputtering and technique for atomic layer deposition, it is ensured that large area is processed, and is had
Good stability and repeatability.
On the basis of such scheme, step（1）With（3）Described in magnetron sputtering, target used is metal Ag targets, sputter gas
Atmosphere is argon gas.
Step（2）With（5）Described in ald, forerunner source used is trimethyl aluminium and water, depositing temperature 150
℃。
Step（4）Described in short annealing, annealing temperature be 800 DEG C, annealing time 30-60s.
The present invention provides a kind of large area Raman enhancing substrate, is prepared according to method described above.
The present invention also provides a kind of application of large area Raman enhancing substrate in Raman detection.
The present invention provides a kind of preparation method of large area Raman enhancing substrate, on the one hand thin by two layers of Ag nano particle
The structure of film, Raman-enhancing energy is significantly improved compared to individual layer Ag nanometer particle films；Meanwhile pass through ald table
Face covers Al2O3Passivation layer, stability is improved, improve service life.The present invention all of be suitable for large area preparation
Magnetron sputtering and technique for atomic layer deposition, it is ensured that substrate can be processed with large area, and ensure that the good weight of substrate
Renaturation.
Brief description of the drawings
Fig. 1 is that nano thin-film substrate prepared by embodiment 1 can be schemed to the Raman-enhancing of 5cb.
Embodiment
A kind of preparation of large area Raman enhancing substrate：
1st, using magnetron sputtering in smooth glass or monocrystalline silicon piece substrate Ag nano thin-films processed；
2nd, one layer of Al is further prepared in above-mentioned substrate using ald2O3Nano thin-film；
3rd, Ag nano thin-films further are prepared using magnetron sputtering in above-mentioned substrate again；
4th, by above-mentioned substrate under nitrogen atmosphere, short annealing is carried out；
5th, Al is further prepared in substrate after the return of goods using ald2O3Nano thin-film.
Magnetron sputtering Ag nano thin-films described in step 1, its thickness are 60-100nm；
Al described in step 22O3Nano thin-film, its thickness are 2-8nm；
Magnetron sputtering Ag nano thin-films described in step 3, its thickness are 40-60nm；
Short annealing described in step 4, its annealing temperature are 800 DEG C, annealing time 30-60s；
Al described in step 52O3Nano thin-film, its thickness are 1-5nm；
Step 1 and 3 magnetron sputterings, target used are metal Ag targets, and sputtering atmosphere is argon gas；
Step 2 and 5 alds, forerunner source used are trimethyl aluminium and water, and depositing temperature is 150 DEG C, Al2O3Thickness
Degree control, is controlled, single cycle Al by number of deposition cycles2O3Thickness be about 0.1nm.
Embodiment 1
1st, using magnetron sputtering in smooth glass or monocrystalline silicon piece substrate 60nmAg nano thin-films processed；
2nd, one layer of 2nmAl is further prepared in above-mentioned substrate using ald2O3Nano thin-film；
3rd, 40nmAg nano thin-films further are prepared using magnetron sputtering in above-mentioned substrate again；
4th, by above-mentioned substrate under nitrogen atmosphere, short annealing is carried out, its annealing temperature is 800 DEG C, annealing time 30s；
5th, 1nm Al are further prepared in substrate after the return of goods using ald2O3Nano thin-film.
Embodiment 2
1st, using magnetron sputtering in smooth glass or monocrystalline silicon piece substrate 100nmAg nano thin-films processed；
2nd, one layer of 8nmAl is further prepared in above-mentioned substrate using ald2O3Nano thin-film；
3rd, 60nmAg nano thin-films further are prepared using magnetron sputtering in above-mentioned substrate again；
4th, by above-mentioned substrate under nitrogen atmosphere, short annealing is carried out, its annealing temperature is 800 DEG C, annealing time 60s；
5th, 5nm Al are further prepared in substrate after the return of goods using ald2O3Nano thin-film.
Embodiment 3
1st, using magnetron sputtering in smooth glass or monocrystalline silicon piece substrate 70nmAg nano thin-films processed；
2nd, one layer of 3nmAl is further prepared in above-mentioned substrate using ald2O3Nano thin-film；
3rd, 50nmAg nano thin-films further are prepared using magnetron sputtering in above-mentioned substrate again；
4th, by above-mentioned substrate under nitrogen atmosphere, short annealing is carried out, its annealing temperature is 800 DEG C, annealing time 40s；
5th, 3nm Al are further prepared in substrate after the return of goods using ald2O3Nano thin-film.
Above-described embodiment prepare Raman enhanced film substrate, preparation technology is simple, can large area prepare, function admirable,
It is stability, reproducible, there is good practicality.
Claims (7)
1. a kind of preparation method of large area Raman enhancing substrate, it is characterised in that comprise the steps of：
（1）The thick Ag nano thin-films of 60-100nm are prepared in smooth glass or monocrystalline silicon piece substrate using magnetron sputtering；
（2）One layer of 2-8nm thickness Al is further prepared in above-mentioned substrate using atomic layer deposition method2O3Nano thin-film；
（3）Again further 40-60nm thickness Ag nano thin-films are prepared in above-mentioned substrate using magnetron sputtering；
（4）By above-mentioned substrate under nitrogen atmosphere, short annealing is carried out；
（5）1-5nm thickness Al is prepared using further in the substrate of atomic layer deposition method after annealing2O3Nano thin-film.
2. the preparation method of large area Raman enhancing substrate according to claim 1, it is characterised in that step（1）With（3）
Described in magnetron sputtering, by the use of metal Ag targets as target, sputtering atmosphere is argon gas.
3. the preparation method of large area Raman enhancing substrate according to claim 1, it is characterised in that step（2）With（5）
Described in atomic layer deposition method, trimethyl aluminium and water as forerunner source, depositing temperature is 150 DEG C.
4. the preparation method of the large area Raman enhancing substrate according to claim 1 and 3, it is characterised in that pass through deposition
Cycle-index is controlled Al2O3Thickness control, single cycle Al2O3Thickness be about 0.1nm.
5. the preparation method of large area Raman enhancing substrate according to claim 1, it is characterised in that step（4）Middle institute
The short annealing stated, annealing temperature are 800 DEG C, annealing time 30-60s.
6. a kind of large area Raman strengthens substrate, it is characterised in that is prepared into according to claim 1-5 any one methods described
Arrive.
A kind of 7. application of the Raman of large area according to claim 6 enhancing substrate in Raman detection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711014808.5A CN107761053B (en) | 2017-10-26 | 2017-10-26 | Large area Raman enhances preparation method of substrate and products thereof and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711014808.5A CN107761053B (en) | 2017-10-26 | 2017-10-26 | Large area Raman enhances preparation method of substrate and products thereof and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107761053A true CN107761053A (en) | 2018-03-06 |
| CN107761053B CN107761053B (en) | 2019-11-05 |
Family
ID=61270640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711014808.5A Active CN107761053B (en) | 2017-10-26 | 2017-10-26 | Large area Raman enhances preparation method of substrate and products thereof and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107761053B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109136860A (en) * | 2018-09-18 | 2019-01-04 | 北京科技大学 | A kind of surface enhanced Raman substrate and preparation method thereof |
| CN109267023A (en) * | 2018-08-29 | 2019-01-25 | 江苏理工学院 | A kind of antibacterial active carbon fiber material and preparation method thereof |
| CN109365831A (en) * | 2018-12-19 | 2019-02-22 | 上海纳米技术及应用国家工程研究中心有限公司 | The preparation method of new infrared photodetection substrate based on tip deposition Pd/Ag gold nano double cone structure |
| CN109434128A (en) * | 2018-10-25 | 2019-03-08 | 上海纳米技术及应用国家工程研究中心有限公司 | Au loads preparation method of tin dioxide nanometer material and products thereof and application |
| CN109520992A (en) * | 2018-11-08 | 2019-03-26 | 南京光声超构材料研究院有限公司 | A kind of SERS substrate of bromination silver nanowires and preparation method thereof |
| CN109898057A (en) * | 2019-03-25 | 2019-06-18 | 中国科学院物理研究所 | Glassy metal film, preparation method and application with surface Raman enhancement effect |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104746049A (en) * | 2015-04-07 | 2015-07-01 | 南京大学 | Method for preparing surface-enhanced Raman scattering base with metal nanometer gaps by utilizing ALD (atomic layer deposition) |
| CN105651756A (en) * | 2016-01-04 | 2016-06-08 | 山东师范大学 | Raman enhanced base for amplifying raman signal, and preparation method and application thereof |
| CN205484061U (en) * | 2016-01-21 | 2016-08-17 | 中国人民公安大学 | Raman reinforcing basement |
-
2017
- 2017-10-26 CN CN201711014808.5A patent/CN107761053B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104746049A (en) * | 2015-04-07 | 2015-07-01 | 南京大学 | Method for preparing surface-enhanced Raman scattering base with metal nanometer gaps by utilizing ALD (atomic layer deposition) |
| CN105651756A (en) * | 2016-01-04 | 2016-06-08 | 山东师范大学 | Raman enhanced base for amplifying raman signal, and preparation method and application thereof |
| CN205484061U (en) * | 2016-01-21 | 2016-08-17 | 中国人民公安大学 | Raman reinforcing basement |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109267023A (en) * | 2018-08-29 | 2019-01-25 | 江苏理工学院 | A kind of antibacterial active carbon fiber material and preparation method thereof |
| CN109136860A (en) * | 2018-09-18 | 2019-01-04 | 北京科技大学 | A kind of surface enhanced Raman substrate and preparation method thereof |
| CN109434128A (en) * | 2018-10-25 | 2019-03-08 | 上海纳米技术及应用国家工程研究中心有限公司 | Au loads preparation method of tin dioxide nanometer material and products thereof and application |
| CN109520992A (en) * | 2018-11-08 | 2019-03-26 | 南京光声超构材料研究院有限公司 | A kind of SERS substrate of bromination silver nanowires and preparation method thereof |
| CN109520992B (en) * | 2018-11-08 | 2021-02-05 | 南京光声超构材料研究院有限公司 | SERS substrate of silver bromide nanowire and preparation method thereof |
| CN109365831A (en) * | 2018-12-19 | 2019-02-22 | 上海纳米技术及应用国家工程研究中心有限公司 | The preparation method of new infrared photodetection substrate based on tip deposition Pd/Ag gold nano double cone structure |
| CN109898057A (en) * | 2019-03-25 | 2019-06-18 | 中国科学院物理研究所 | Glassy metal film, preparation method and application with surface Raman enhancement effect |
| CN109898057B (en) * | 2019-03-25 | 2020-12-29 | 中国科学院物理研究所 | Metallic glass film with surface Raman enhancement effect, preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107761053B (en) | 2019-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107761053A (en) | Preparation method of large area Raman enhancing substrate and products thereof and application | |
| CN101776604B (en) | Production method of basement for enhancing raman scattering of molecule | |
| CN105572100B (en) | A kind of Surface enhanced Raman scattering substrate and preparation method thereof | |
| Linh et al. | A facile low-cost paper-based SERS substrate for label-free molecular detection | |
| Schwartzkopf et al. | Role of sputter deposition rate in tailoring nanogranular gold structures on polymer surfaces | |
| CN105403551B (en) | A kind of preparation method with Raman-enhancing energy film | |
| Zhai et al. | Multiple depositions of Ag nanoparticles on chemically modified agarose films for surface-enhanced Raman spectroscopy | |
| Li et al. | Ag2O@ Ag core-shell structure on PMMA as low-cost and ultra-sensitive flexible surface-enhanced Raman scattering substrate | |
| CN105651756B (en) | Raman for amplifying Raman signal enhances substrate and its preparation method and application | |
| Zhou et al. | The effect of underlayer thin films on the surface-enhanced Raman scattering response of Ag nanorod substrates | |
| Pienpinijtham et al. | An ionic surfactant-mediated Langmuir–Blodgett method to construct gold nanoparticle films for surface-enhanced Raman scattering | |
| CN106596505A (en) | Surface enhanced Raman scattering substrate for detecting pesticides, and production method and application thereof | |
| CN102653151A (en) | Solar selective absorption coating | |
| CN102628808A (en) | Preparation method and application method of high-sensitivity and high-stability surface-enhanced Raman chip | |
| CN104764732A (en) | Surface-enhanced raman scattering base on basis of special-material superabsorbers and preparation method thereof | |
| CN110987901B (en) | Au-Au dimer array structure and preparation method and application thereof | |
| CN104259475A (en) | Preparation method of nano-silver/graphene derivative surface enhanced Raman substrate | |
| CN108982474A (en) | A kind of surface reinforced Raman active substrate and preparation method thereof based on the compound plasmon resonance structure of metal-dielectric | |
| Jiang et al. | A sensitive SERS substrate based on Au/TiO2/Au nanosheets | |
| Ankudze et al. | Highly active surface-enhanced Raman scattering (SERS) substrates based on gold nanoparticles infiltrated into SiO2 inverse opals | |
| CN108333166A (en) | The surface enhanced Raman scattering substrate and preparation method of induced with laser | |
| Yin et al. | Highly sensitive and stable SERS substrate fabricated by co-sputtering and atomic layer deposition | |
| CN106770162A (en) | A kind of substrate of SERS for detecting sweetener and its preparation method and application | |
| Hu et al. | Fabrication of one-dimensional ZnO/4-Mpy/Ag assemblies and their spectroscopic studies | |
| CN107037027A (en) | A kind of wide area surface strengthens the preparation method of Raman scattering substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |