CN107749434A - 一种石墨烯基光电探测器 - Google Patents
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Abstract
本发明提供一种石墨烯基光电探测器，包括硅基板、硫掺杂石墨烯层以及硫掺杂石墨烯层上的铜铟镓硒硫功能层，是一种新的材料和材料之间的配合方式下形成的光电探测器，通过硫掺杂石墨烯层结合成分渐变的铜铟镓硒硫功能层，给出了一种新结构的石墨烯基光电探测器。
Description
技术领域
本发明涉及一种传感器，具体涉及一种石墨烯基光电探测器。
背景技术
光电探测技术在紫外线辐射检测、环境监测、化学成分分析、污水检测与处理、灾害预警、食品卫生、医疗健康、无线加密通信等方面具有广泛的应用。由于宽禁带半导体(WBG，如氮化镓、碳化硅、氧化锌等)具有不吸收可见光的特性，在紫外探测领域得到广泛的关注，并展开了大量的研究与应用。然而，目前制备大面积高质量单晶WBG材料的工艺复杂且还未完全成熟，材料表面存在大量缺陷态，导致光电传感器响应时间较低。另一方面，制备大面积高质量单晶硅的工艺则已经非常成熟，半导体硅在可见光探测领域是最理想的材料之一，也是紫外光电传感的常用材料。然而，硅材料对紫外光的响应度较低，这是由于紫外光在硅材料中的透射深度极浅(波长370纳米以下，透射深度大于20纳米)，光生载流子主要集中在硅的表面，而传统硅基P-N或P-I-N结型光电探测器件的结深一般大于200nm，载流子复合效应导致光学响应随入射光波长的减小而迅速降低。超浅P-N或P-I-N结(深度大于20纳米)的制备相当困难，传统方法是采用离子注入和精确控制热扩散工艺来制备浅结，但是在硅表面附近易形成P+N结，高掺杂的P+区域会增加载流子的表面复合，降低光电传感器的响应度。一些新开发的浅结技术(比如δ-掺杂技术或激光掺杂技术)制备工艺相当复杂，导致硅基光电传感器价格变得昂贵。
石墨烯是一种由碳原子形成的蜂窝状平面薄膜，是一种只有一个原子层厚度的准二维材料，所以又叫做单原子层石墨。它的厚度大约为0.335μm，根据制备方式的不同而存在不同的起伏，通常在垂直方向的高度大约1μm左右，是除金刚石以外所有碳晶体的基本结构单元。石墨烯目前最有潜力的应用是成为硅的替代品，制造超微型晶体管，用来生产未来的超级计算机。用石墨烯取代硅，计算机处理器的运行速度将会快数百倍。另外，石墨烯几乎是完全透明的，只吸收2.3％的光。另一方面，它非常致密，即使是最小的气体分子也无法穿透。这些特征使得它非常适合作为透明电子产品的原料。
CIGS电池具有性能稳定、抗辐射能力强，光电转换效率目前是各种薄膜太阳电池之首，接近于目前市场主流产品晶体硅太阳电池转换效率，成本却是其1/3。正是因为其性能优异被国际上称为下一代的廉价太阳电池，无论是在地面阳光发电还是在空间微小卫星动力电源的应用上具有广阔的市场前景。CIGS电池具有与多晶硅太阳能电池接近的效率，具有低成本和高稳定性的优势，并且产业化瓶颈已经突破，在晶体硅太阳能电池原材料短缺的不断加剧和价格的不断上涨背景下，很多公司投入巨资，CIGS产业呈现出蓬勃发展的态势。
目前石墨烯在光电传感器上的应用已经被广泛研究，但其中的潜力并没有被完全挖掘出来，因此基于石墨烯的光电传感器，尤其是与其它材料相结合的光电传感器还有很大的开发空间，在该领域还有很多值得发现和寻找的各种结构或结构与材料组合的气体传感器。
发明内容
本发明提供一种新型结构的基于多层石墨烯光电传感器，它能够加速载流子的收集，充分利用光使得传感器的灵敏度得到很大的提升。本发明提供一种石墨烯基光电探测器，包含：
硅基板；
硫掺杂石墨烯层，所述硫掺杂石墨烯层形成在所述硅基板层上；石墨烯作为一种新型的碳材料,因其独特的二维平面结构、巨大的比表面积以及优良的导电性能使其在燃料电池等领域表现出良好的应用前景。理论计算和大量实验证明对石墨烯进行掺杂修饰,可以有效的调节其电子性能和化学活性。本发明中使用硫掺石墨烯配合铜铟镓硒硫功能层，发现能够较好地提升光电效率。
在硫掺杂石墨烯层上形成铜铟镓硒硫功能层，所述铜铟镓硒硫功能层中硫含量从下至上逐渐减小，硒含量从下至上逐渐增大；
所述铜铟镓硒硫功能层上的透明导电氧化物层；
所述铜铟镓硒硫功能层的制备方法为：先在所述硫掺杂石墨烯层上形成一层铜铟镓硫预制层，在所述铜铟镓硫预制层上形成一层铜铟镓预制层，然后在所述铜铟镓预制层上形成一层铜铟镓硒预制层，形成三次预制层后在硒蒸气氛围下进行退火。
进一步地，所述透明导电氧化物层替换为石墨烯层。
进一步地，所述铜铟镓预制层的厚度占三层预制层厚度的比例在45-75％。
进一步地，所述硫掺杂石墨烯层的层数是1-5层。
进一步地，所述硫掺杂石墨烯层的表面还形成有碳量子点。
进一步地，所述硅基板和所述硫掺杂石墨层之间还形成有氟化镁层。
进一步地，所述铜铟镓硒硫功能层最上表面的成分为铜铟镓硒。
进一步地，所述铜铟镓硒硫功能层最底层表面的成分为铜铟镓硫。
本发明的有益效果在于：本发明提供一种石墨烯基光电探测器，包括硅基板、硫掺杂石墨烯层以及硫掺杂石墨烯层上的铜铟镓硒硫功能层，是一种新的材料和材料之间的配合方式下形成的光电探测器，通过硫掺杂石墨烯层结合成分渐变的铜铟镓硒硫功能层，给出了一种新结构的石墨烯基光电探测器。
附图说明
图1为本发明石墨烯基光电探测器的结构示意图。
具体实施方式
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳的实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。
下面将结合附图及具体实施例对本发明作进一步详细说明。
参见图1，本发明提供一种石墨烯基光电探测器，其特征在于，包含：
硅基板1；
硫掺杂石墨烯层2，所述硫掺杂石墨烯层2形成在所述硅基板1层上；
在硫掺杂石墨烯层2上形成铜铟镓硒硫功能层3，所述铜铟镓硒硫功能层3中硫含量从下至上逐渐减小，硒含量从下至上逐渐增大；
所述铜铟镓硒硫功能层3上的透明导电氧化物层4；
所述铜铟镓硒硫功能层3的制备方法为：先在所述硫掺杂石墨烯层2上形成一层铜铟镓硫预制层，在所述铜铟镓硫预制层上形成一层铜铟镓预制层，然后在所述铜铟镓预制层上形成一层铜铟镓硒预制层，形成三次预制层后在硒蒸气氛围下进行退火。
进一步地，所述透明导电氧化物层4替换为石墨烯层。
进一步地，所述铜铟镓预制层的厚度占三层预制层厚度的比例在45-75％。
进一步地，所述硫掺杂石墨烯层2的层数是1-5层。
进一步地，所述硫掺杂石墨烯层2的表面还形成有碳量子点。
进一步地，所述硅基板1和所述硫掺杂石墨层之间还形成有氟化镁层。
进一步地，所述铜铟镓硒硫功能层3最上表面的成分为铜铟镓硒。
进一步地，所述铜铟镓硒硫功能层3最底层表面的成分为铜铟镓硫。
本发明提供一种石墨烯基光电探测器，包括硅基板、硫掺杂石墨烯层以及硫掺杂石墨烯层上的铜铟镓硒硫功能层，是一种新的材料和材料之间的配合方式下形成的光电探测器，通过硫掺杂石墨烯层结合成分渐变的铜铟镓硒硫功能层，给出了一种新结构的石墨烯基光电探测器。
附图中描述位置关系的用于仅用于示例性说明，不能理解为对本专利的限制，显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。
Claims (8)
1.一种石墨烯基光电探测器，其特征在于，包含：
硅基板；
硫掺杂石墨烯层，所述硫掺杂石墨烯层形成在所述硅基板层上；
在硫掺杂石墨烯层上形成铜铟镓硒硫功能层，所述铜铟镓硒硫功能层中硫含量从下至上逐渐减小，硒含量从下至上逐渐增大；
所述铜铟镓硒硫功能层上的透明导电氧化物层；
所述铜铟镓硒硫功能层的制备方法为：先在所述硫掺杂石墨烯层上形成一层铜铟镓硫预制层，在所述铜铟镓硫预制层上形成一层铜铟镓预制层，然后在所述铜铟镓预制层上形成一层铜铟镓硒预制层，形成三次预制层后在硒蒸气氛围下进行退火。
2.如权利要求1所述的石墨烯基光电探测器，其特征在于，所述透明导电氧化物层替换为石墨烯层。
3.如权利要求1所述的石墨烯基光电探测器，其特征在于，所述铜铟镓预制层的厚度占三层预制层厚度的比例在45-75％。
4.如权利要求1所述的石墨烯基光电探测器，其特征在于，所述硫掺杂石墨烯层的层数是1-5层。
5.如权利要求1-4任一项权利要求所述的石墨烯基光电探测器，其特征在于，所述硫掺杂石墨烯层的表面还形成有碳量子点。
6.如权利要求1所述的石墨烯基光电探测器，其特征在于，所述硅基板和所述硫掺杂石墨层之间还形成有氟化镁层。
7.如权利要求1所述的石墨烯基光电探测器，其特征在于，所述铜铟镓硒硫功能层最上表面的成分为铜铟镓硒。
8.如权利要求8所述的石墨烯基光电探测器，其特征在于，所述铜铟镓硒硫功能层最底层表面的成分为铜铟镓硫。
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| CN103531664A (zh) * | 2013-10-28 | 2014-01-22 | 苏州大学 | 柔性衬底上制备石墨烯基光电晶体管的方法 |
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