CN107742606A - A kind of structure for being bonded wafer and preparation method thereof - Google Patents
A kind of structure for being bonded wafer and preparation method thereof Download PDFInfo
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- CN107742606A CN107742606A CN201711030930.1A CN201711030930A CN107742606A CN 107742606 A CN107742606 A CN 107742606A CN 201711030930 A CN201711030930 A CN 201711030930A CN 107742606 A CN107742606 A CN 107742606A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000007789 gas Substances 0.000 claims abstract description 58
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000001301 oxygen Substances 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 239000012298 atmosphere Substances 0.000 claims abstract description 7
- 238000004528 spin coating Methods 0.000 claims abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 98
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 44
- 239000008367 deionised water Substances 0.000 claims description 33
- 229910021641 deionized water Inorganic materials 0.000 claims description 33
- 239000011259 mixed solution Substances 0.000 claims description 33
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 22
- 239000004411 aluminium Substances 0.000 claims description 19
- 238000007654 immersion Methods 0.000 claims description 14
- 239000003960 organic solvent Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 229910001868 water Inorganic materials 0.000 claims description 11
- 238000006701 autoxidation reaction Methods 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 196
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000002156 mixing Methods 0.000 abstract 1
- 235000010210 aluminium Nutrition 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 229910018516 Al—O Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Abstract
The invention discloses a kind of structure for being bonded wafer and preparation method thereof, mainly solves the technical problem that prior art bond strength is low and the voidage of bonding is high.Structure of the bonding wafer and preparation method thereof is by the way that two pieces of wafers for needing to be bonded are cleaned, hydatogenesis metal Al, in any crystal column surface spin coating photoresist, soft baking, UV exposes, photoresist developing, etching forms equidistant passage, low-temperature bonding and process annealing are bonded to obtain wafer bonding structure under an oxygen atmosphere, the wafer bonding structure includes upper and lower two layers of wafer layer, and aoxidized between two layers of wafer layer with being bonded while carrying out, so that the surface after bonding has the technical scheme of alundum (Al2O3) and the gas passage of gas mixing, structure of the bonding wafer and preparation method thereof, space is small between realizing wafer, bond strength is high, and the device thermal diffusivity based on soi structure manufacture is good；It can be used in the low-temperature bonding of wafer.
Description
Technical field
The present invention relates to wafer bond techniques field, is related specifically to a kind of structure for being bonded wafer and preparation method thereof.
Background technology
With the development of integrated circuit, wafer bonding is proved to be a kind of directly effective assembling, processing, manufacture substrate material
The method of material, and obtained widely should in the manufacturing field of semiconductor applications, microelectronic, MEMS and photoelectric device
With particularly the mode of low-temperature-direct-bonding has obtained more deep embodiment in SOI (SOI) manufacturing process.
Wafer bonding refers to that the clean wafer of two surfacings under certain condition can be mutual by the chemical bond on surface
It is connected together.Wafer bonding has compatibility and the flexibility of semiconductor technology, and typically BCB (benzene is used in bonding process
And cyclobutane) it is bonding medium material, the shortcomings that the presence poor radiation of this bonding material, therefore it can be produced at bonded interface
More bubble, cause the bonding bonding quality problem that bond strength is low；These bonding quality problems, which easily produce, causes optical coupling
Scattering or the interface void of loss.Therefore there are still voidage height and bond strength are low in existing wafer bond techniques
Problem.
Show Al in research2O3Heat dissipating and diffusion barrier properties be excellent.Therefore, for bonding and 3D
For Application of integrated circuit, Al2O3Many merits be becoming increasingly popular.Insulated on the III-V insulators on silicon
Demonstrated in body (SOI) structure using ald (AlD) Al2O3, with In0.53Ga0.47As-OI and Al2O3Bury oxygen
Excellent performance is obtained at the bottom interface of compound.
However, bonding quality nevertheless suffers from the limitation for the interface void that optical coupling may be caused to scatter or lose.These are empty
Gap be as caused by interface polymerization reaction gaseous by-product (mainly by H2And H2O molecular compositions) ground in remaining bonded interface
Several method has been studied carefully to suppress interface void density.There are some researches show InP-on-SOI uses vertical exhaust passage in combination
(VOC), gaseous by-product is absorbed and is diffused into the SiO of porous embedment2In layer.Although have been realized in void-free viscous
Close, however, it was found that these gases absorbed can cause serious film to be layered after high temperature in adhesion process.
The content of the invention
The technical problems to be solved by the invention are the skills that voidage present in prior art is high and bond strength is low
Art problem, there is provided a kind of new structure of bonding wafer and preparation method thereof, the technical method has reduction voidage and carried
The technical characterstic of high bond strength.
In order to solve the above technical problems, the technical scheme used is as follows：
A kind of structure for being bonded wafer, including the first wafer and the second wafer, second wafer are located at the first wafer
Top, is provided with intermediate layer between first wafer and the second wafer, the intermediate layer includes gas passage and three oxidations two
Aluminium lamination, the gas passage are arranged in alundum (Al2O3) layer, and gas passage extends transversely through alundum (Al2O3) layer.
Further：The gas passage etches the equidistant gas to be formed by mixed gas for alundum (Al2O3) layer and led to
Road.
Further：The equidistantly gas passage is groove-like passage.
The preparation method of the structure of above-mentioned bonding wafer, comprises the following steps：
A. the first wafer and the second wafer are cleaned, dried up；
B. by the equal deposited metal aluminium in the surface of first wafer and second wafer；
C. photoresist is uniformly smeared into the surface of first wafer or second wafer using spin-coating method；
D. the first wafer for smearing photoresist or the second wafer are subjected to soft baking, addition mask, ultraviolet light exposure successively
Light and photoresist developing technique；For the condition of the soft baking to be placed in vacuum hot plate, baking temperature is 80 DEG C -120 DEG C, is dried
The roasting time is 30s-60s；
E. to thering is the first wafer of photoresist or the second wafer to perform etching and to form gas passage, by first wafer
The bonding face of bonding face and second wafer contacts with each other, and is bonded in advance, the bonding face of first wafer and described
The bonding face of two wafers is the metallic aluminum that step B is formed；
F. the photoresist of residual is removed by wet etching；
G. first wafer and second wafer are put into bonder and low-temperature bonding, oxygen is carried out under oxygen atmosphere
Molecule enters the bonding face of first wafer and the bonding face of second wafer by the metal by the gas passage
Aluminium lamination autoxidation is into alundum (Al2O3)；Bonding temperature is 100 DEG C -400 DEG C, bonding pressure 100Kg-1000Kg；
H. process annealing is handled；Annealing temperature is 100 DEG C -400 DEG C.
Further：Cleaning in step A is using RCA wet chemical cleans methods, the RCA wet chemical cleans method institute
The cleaning fluid of use include organic solvent, the mixed solution and ammoniacal liquor of sulfuric acid and hydrogen peroxide, hydrogen peroxide and deionized water it is mixed
Close solution；In the mixed solution of sulfuric acid and hydrogen peroxide, the sulfuric acid concentration is 96%, and the concentration of the hydrogen peroxide is 30%,
The volume ratio of the sulfuric acid and the hydrogen peroxide is 4:1；In the mixed solution of the ammoniacal liquor, hydrogen peroxide and deionized water, institute
The concentration for stating ammoniacal liquor is 29%, and the concentration of the hydrogen peroxide is 30%, and the volume ratio of three kinds of liquid is：Ammoniacal liquor:Hydrogen peroxide:Go from
Sub- water is 1:1:5；
The method of cleaning comprises the following steps：First wafer and second wafer are removed using the organic solvent
Surface and oil contaminant；Using the particle for the adsorption for being cleaned by ultrasonic first wafer and second wafer；By the sulfuric acid
95 DEG C are heated to the mixed solution of hydrogen peroxide, first wafer and second wafer are soaked 20 minutes, use deionization
Water gets the first wafer after immersion express developed and the second wafer removes metal ion；By the ammoniacal liquor, hydrogen peroxide and deionized water
Mixed solution be heated to 80 DEG C, first wafer and second wafer are soaked 15 minutes, kept in immersion process
The mixed solution of the ammoniacal liquor, hydrogen peroxide and deionized water it is temperature-resistant, then the after getting immersion express developed with deionized water
One wafer and the second wafer.
Further：Drying in step A is to be dried up using nitrogen.
Further：First wafer and second wafer are cleaned and/or polished after step A cleanings.
Further：The method of deposited metal aluminium in step B is using chemical vapour deposition technique, plasma enhanced chemical
One kind in vapour deposition process, atomic layer deposition method, sputtering, means of electron beam deposition and pulse laser deposition, the metal
The thickness of al deposition is 20nm.
Further：Gas passage in step E is the equidistant gas passage of groove-like.
Further：Etching in step E is performed etching using the mixed gas of boron chloride and chlorine；The etching is
Carried out under cavity at being 60 DEG C in temperature, the etch period is 60s-80s.
Beneficial effects of the present invention：
Effect one, alundum (Al2O3) have preferable heat dissipating and diffusion barrier properties, in bonding wafer plane
Etching forms gas passage and metallic aluminium autoxidation and turns into alundum (Al2O3) while carry out, reach higher bond strength with
And cause bonding wafer that there is preferable thermal diffusivity；On the other hand, being bonded gas passage in wafer plane can effectively exclude
Gas so that the bubble in bonding wafer is reduced, and voidage reduces.
Effect two, the equidistant gas passage of groove-like, be advantageous to oxygen enters promotion oxidation, makes bonding same with oxidation
Shi Jinhang, and the uniformity that oxygen enters can be ensured.
Effect three, wafer is carried out into cleaning can be by the stolen goods of the greasy dirt of crystal column surface, the particle of absorption and metal ion
It is dirty so that wafer totally avoids producing bubble during bonding.
Effect four, using nitrogen so that crystal column surface keeps clean, avoid bringing new pollutant.
Effect five, in the surface deposited metal aluminium of wafer so that autoxidation forms three oxygen in atmosphere for metallic aluminium exposure
Change two aluminium protective layers, and aoxidize with being bonded while carrying out, the Al-O keys of formation are the mode of autoxidation, largely improve key
The intensity of conjunction.
Effect six, soft baking can remove the solvent of cleaning, strengthen the adhesiveness of bonding process, discharge photoresist planted agent
Power, while prevent photoresist contaminated equipment.
Effect seven, etching is completed using boron chloride and chlorine mixed gas, boron chloride is good for oxygen and water
Good cleaning agent, it can prevent from forming oxide alundum (Al2O3) in metallic aluminum surface in corrosion process.
Effect eight, the broken of thermally sensitive device or structure is avoided using low-temperature bonding and process annealing technology
It is bad, be advantageous to be bonded any two kinds of substrates or device.
Effect nine, two wafers are cleaned and/or polished, specifically included (logical when the roughness of crystal column surface is larger
Often greater than 2nm), its surface roughness is reached the demand (typically smaller than 1nm) of suitable bonding chip.
Effect 10, the thickness of metal al deposition is 20nm so that the void count of bonding is less, and size is smaller.
In summary, structure of bonding wafer of the present invention and preparation method thereof, in the first wafer and the second wafer
Between oxidation with being bonded while carrying out, the Al-O keys of formation are the mode of autoxidation, the intensity of the big bonding of bond energy；And
The entrance that intermediate layer formation groove gas passage between one wafer and the second wafer, i.e. gas passage are advantageous to oxygen promotes oxygen
Change, while reduce the caused space of bonding chip；Using Al2O3Be advantageous to the thermal diffusivity of formed device as bonding medium；
Thermally sensitive device or structural damage are avoided using low-temperature bonding technology, be advantageous to be bonded any two kinds of substrates or
Person's device.Therefore structure and preparation method thereof of bonding wafer of the present invention reduces space between wafer, improved
Bond strength is high, and improves the thermal diffusivity of the device based on soi structure manufacture.
Brief description of the drawings
Fig. 1 is the cross-sectional view of substrate wafer before low-temperature bonding.
Fig. 2 is to the cross-sectional view of the first wafer and the second wafer hydatogenesis metallic aluminium after the completion of cleaning step.
Fig. 3 is that the cross section to form equidistant groove gas passage is etched to any wafer in the first wafer and the second wafer
Schematic diagram.
Fig. 3 a-3d are the cross-sectional view for the detailed process that Fig. 3 substeps form groove.
Fig. 4 is in O2Cross-sectional view is bonded under environment.
Fig. 5 is bonding crystal circle structure cross-sectional view after the completion of bonding.
Brief description of the drawings：
The wafers of 1- first, the wafers of 2- second, 3- metallic aluminiums, 4- photoresists, 5- oxygen atmospheres, 6- ultraviolet lights, 7- masks,
8- alundum (Al2O3) layers, 9- gas passages, 10- boron chlorides and chlorine mixed gas
Embodiment
The present invention is further described with reference to the accompanying drawings and examples.
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
Embodiment 1：
As shown in figure 1, the present embodiment provides a kind of structure for being bonded wafer, including the first wafer 1 and the second wafer 2, the
One wafer 1 is located at bottom, and the top of the first wafer 1 is intermediate layer, and intermediate layer includes gas passage 9 and alundum (Al2O3) layer 8, in
The top of interbed is second wafer 2；Gas passage 9 is the equidistant gas that the groove-like to be formed is etched by mixed gas
Passage.
The preparation method of the structure of this bonding wafer comprises the following steps：
A. the first wafer 1 and the second wafer 2 are cleaned, dried up；Clean as using RCA wet chemical cleans methods,
Cleaning fluid includes organic solvent, the mixed solution of sulfuric acid and hydrogen peroxide and ammoniacal liquor, double used by RCA wet chemical cleans methods
The mixed solution of oxygen water and deionized water；Organic solvent includes one kind or more of isopropanol, absolute ethyl alcohol, methanol and acetone
Kind；In the mixed solution of sulfuric acid and hydrogen peroxide, sulfuric acid concentration 96%, the concentration of hydrogen peroxide is 30%, sulfuric acid and hydrogen peroxide
Volume ratio be 4:1；In the mixed solution of ammoniacal liquor, hydrogen peroxide and deionized water, the concentration of ammoniacal liquor is 29%, hydrogen peroxide it is dense
Spend for 30%, the volume ratio of three kinds of liquid is：Ammoniacal liquor:Hydrogen peroxide:Deionized water is 1:1:5；The method of cleaning includes following step
Suddenly：The surface and oil contaminant of the first wafer 1 and the second wafer 2 is removed using organic solvent；Using the first wafer 1 and second of ultrasonic cleaning
The particle of the adsorption of wafer 2；The mixed solution of sulfuric acid and hydrogen peroxide is heated to 95 DEG C, the first wafer 1 and second is brilliant
The immersion of circle 2 20 minutes, the first wafer 1 and the second wafer 2 after getting immersion express developed with deionized water remove metal ion；By ammonia
The mixed solution of water, hydrogen peroxide and deionized water is heated to 80 DEG C, and the first wafer 1 and the second wafer 2 are soaked 15 minutes, soaked
The temperature-resistant of the mixed solution of ammoniacal liquor, hydrogen peroxide and deionized water is kept during bubble, then leaching is got express developed with deionized water
The first wafer 1 and the second wafer 2 after bubble；Coarse the first wafer 1 and the second wafer 2 are cleaned and/or thrown after cleaning
Light；Coarse to refer to that surface roughness is more than 2nm, the surface roughness after cleaning and/or polishing is less than 1nm；Entered using nitrogen
Row drying；
B. by the equal deposited metal aluminium 3 in the surface of the first wafer 1 and the second wafer 2；The method of deposited metal aluminium 3 is using organic
Metallochemistry vapour deposition process, plasma enhanced chemical vapor deposition method, atomic layer deposition method, sputtering, means of electron beam deposition
And one kind in pulse laser deposition, the thickness of metal al deposition is 20nm；；
C. photoresist 4 is uniformly smeared into the surface of the first wafer 1 or the second wafer 2 using spin-coating method；
D. the first wafer 1 for smearing photoresist 4 or the second wafer 2 are subjected to soft baking successively, place and cover on photoresist 4
Masterplate 7, then exposed with ultraviolet light 6 and photoresist developing technique；The condition of soft baking is is placed in vacuum hot plate, baking temperature
For 80 DEG C, baking time 30s；
E. to thering is the first wafer 1 of photoresist 4 or the second wafer 2 to perform etching and to form gas passage 9, by the first wafer 1
Bonding face and the bonding face of the second wafer 2 contact with each other, be bonded in advance, the bonding face of the first wafer 1 and the second wafer 2
Bonding face is the metallic aluminum that step B is formed；Etching is performed etching using the mixed gas 10 of boron chloride and chlorine；Etching
To be carried out under the cavity at being 60 DEG C in temperature, etch period 60s；
F. the photoresist 4 of residual is removed by wet etching；
G. the first wafer 1 and the second wafer 2 are put into 5 times progress low temperature keys of oxygen atmosphere of the bonder cavity full of oxygen
Close, oxygen molecule enters the bonding face of the first wafer 1 and the bonding face of the second wafer 2 by metallic aluminum nature by gas passage
It is oxidized to alundum (Al2O3) 8；Bonding temperature is 100 DEG C, bonding pressure 100Kg；
Embodiment 2：
As shown in figure 1, the present embodiment provides a kind of structure for being bonded wafer, including the first wafer 1 and the second wafer 2, the
One wafer 1 is located at bottom, and the top of the first wafer 1 is intermediate layer, and intermediate layer includes gas passage 9 and alundum (Al2O3) layer 8, in
The top of interbed is the second wafer 2；Gas passage 9 is that the equidistant gas that the groove-like to be formed is etched by mixed gas leads to
Road.
The preparation method of the structure of this bonding wafer comprises the following steps：
A. the first wafer 1 and the second wafer 2 are cleaned, dried up；Clean as using RCA wet chemical cleans methods,
Cleaning fluid includes organic solvent, the mixed solution of sulfuric acid and hydrogen peroxide and ammoniacal liquor, double used by RCA wet chemical cleans methods
The mixed solution of oxygen water and deionized water；Organic solvent includes one kind or more of isopropanol, absolute ethyl alcohol, methanol and acetone
Kind；In the mixed solution of sulfuric acid and hydrogen peroxide, sulfuric acid concentration 96%, the concentration of hydrogen peroxide is 30%, sulfuric acid and described double
The volume ratio of oxygen water is 4:1；In the mixed solution of ammoniacal liquor, hydrogen peroxide and deionized water, the concentration of ammoniacal liquor is 29%, hydrogen peroxide
Concentration be 30%, the volume ratio of three kinds of liquid is：Ammoniacal liquor:Hydrogen peroxide:Deionized water=1:1:5；The method of cleaning include with
Lower step：The surface and oil contaminant of the first wafer and the second wafer is removed using organic solvent；Using being cleaned by ultrasonic the first wafer and the
The particle of the adsorption of two wafers；The mixed solution of sulfuric acid and hydrogen peroxide is heated to 95 DEG C, the first wafer and second is brilliant
Circle immersion 20 minutes, the first wafer and the second wafer after getting immersion express developed with deionized water remove metal ion；By ammoniacal liquor,
Hydrogen peroxide and the mixed solution of deionized water are heated to 80 DEG C, and the first wafer and the second wafer are soaked 15 minutes, soaked
Kept in journey ammoniacal liquor, hydrogen peroxide and deionized water mixed solution it is temperature-resistant, then after getting immersion express developed with deionized water
The first wafer and the second wafer；Coarse the first wafer and the second wafer are cleaned and/or polished after cleaning；Coarse finger
Be that surface roughness is more than 2nm, clean and/or polishing after surface roughness be less than 1nm；Dried up using nitrogen；
B. by the equal deposited metal aluminium 3 in the surface of the first wafer 1 and the second wafer 2；The method of deposited metal aluminium 3 is using organic
Metallochemistry vapour deposition process, plasma enhanced chemical vapor deposition method, atomic layer deposition method, sputtering, means of electron beam deposition
And one kind in pulse laser deposition, the thickness of metal al deposition is 20nm；；
C. photoresist 4 is uniformly smeared into the surface of the first wafer 1 or second wafer 2 using spin-coating method；
D. the first wafer 1 for smearing photoresist 4 or the second wafer 2 are subjected to soft baking successively, place and cover on photoresist 4
Masterplate 7, then exposed with ultraviolet light 6 and photoresist developing；To be placed in vacuum hot plate, baking temperature is the condition of soft baking
120 DEG C, baking time 60s；
E. to thering is the first wafer 1 of photoresist 4 or the second wafer 2 to perform etching and to form gas passage 9, by the first wafer 1
Bonding face and the bonding face of the second wafer 2 contact with each other, be bonded in advance, the bonding face of the first wafer 1 and the second wafer 2
Bonding face is the metallic aluminum that step B is formed；Etching is performed etching using the mixed gas 10 of boron chloride and chlorine；Etching
To be carried out under the cavity at being 60 DEG C in temperature, etch period 80s；
F. the photoresist 4 of residual is removed by wet etching；
G. the first wafer 1 and the second wafer 2 are put into bonder in 5 times progress low-temperature bondings of oxygen atmosphere；Oxygen molecule
The bonding face of first wafer 1 and the bonding face of the second wafer 2 are entered by metallic aluminum autoxidation into three oxygen by gas passage
Change two aluminium 8；Bonding temperature is 400 DEG C, bonding pressure 1000Kg；
H. process annealing is handled；Annealing temperature is 400 DEG C.
Embodiment 3：
As shown in figure 1, the present embodiment provides a kind of structure for being bonded wafer, including the first wafer 1 and the second wafer 2, the
One wafer 1 is located at bottom, and the top of the first wafer 1 is intermediate layer, and intermediate layer includes 8 layers of gas passage 9 and alundum (Al2O3), in
The top of interbed is the second wafer 2；Gas passage 9 is that the equidistant gas that the groove-like to be formed is etched by mixed gas leads to
Road.
The preparation method of the structure of this bonding wafer comprises the following steps：
A. the first wafer 1 and the second wafer 2 are cleaned, dried up；Clean as using RCA wet chemical cleans methods,
Cleaning fluid includes organic solvent, the mixed solution of sulfuric acid and hydrogen peroxide and ammoniacal liquor, double used by RCA wet chemical cleans methods
The mixed solution of oxygen water and deionized water；Organic solvent includes one kind or more of isopropanol, absolute ethyl alcohol, methanol and acetone
Kind；In the mixed solution of sulfuric acid and hydrogen peroxide, sulfuric acid concentration 96%, the concentration of hydrogen peroxide is 30%, sulfuric acid and described double
The volume ratio of oxygen water is 4:1；In the mixed solution of ammoniacal liquor, ammoniacal liquor, hydrogen peroxide and deionized water, the concentration of ammoniacal liquor is 29%,
The concentration of hydrogen peroxide is 30%, and the volume ratio of three kinds of liquid is：Ammoniacal liquor:Hydrogen peroxide:Deionized water=1:1:5；The method of cleaning
Comprise the following steps：The surface and oil contaminant of the first wafer 1 and the second wafer 2 is removed using organic solvent；Using ultrasonic cleaning first
The particle of the adsorption of the wafer 2 of wafer 1 and second；The mixed solution of sulfuric acid and hydrogen peroxide is heated to 95 DEG C, it is brilliant by first
The wafer 2 of circle 1 and second soaks 20 minutes, and the first wafer 1 and the second wafer 2 after getting immersion express developed with deionized water remove gold
Belong to ion；The mixed solution of ammoniacal liquor, hydrogen peroxide and deionized water is heated to 80 DEG C, the first wafer 1 and the second wafer 2 are soaked
15 minutes, the mixed solution of holding ammoniacal liquor, hydrogen peroxide and deionized water was temperature-resistant in immersion process, then uses deionized water
Get the first wafer 1 and the second wafer 2 after immersion express developed；Coarse the first wafer 1 and the second wafer 2 are wiped after cleaning
Wash and/or polish；Coarse to refer to that surface roughness is more than 2nm, the surface roughness after cleaning and/or polishing is less than 1nm；Adopt
Dried up with nitrogen；
B. by the equal deposited metal aluminium 3 in the surface of the first wafer 1 and the second wafer 2；The method of deposited metal aluminium 3 is using organic
Metallochemistry vapour deposition process, plasma enhanced chemical vapor deposition method, atomic layer deposition method, sputtering, means of electron beam deposition
And one kind in pulse laser deposition, the thickness of metal al deposition is 20nm；
C. photoresist 4 is uniformly smeared into the surface of the first wafer 1 or the second wafer 2 using spin-coating method；
D. the first wafer 1 for smearing photoresist 4 or the second wafer 2 are subjected to soft baking successively, place and cover on photoresist 4
Masterplate 7, then exposed with ultraviolet light 6 and photoresist developing；To be placed in vacuum hot plate, baking temperature is the condition of soft baking
100 DEG C, baking time 45s；
E. to thering is the first wafer 1 of photoresist 4 or the second wafer 2 to perform etching and to form gas passage 9, by the first wafer 1
Bonding face and the bonding face of the second wafer 2 contact with each other, be bonded in advance, the bonding face of the first wafer 1 and the second wafer 2
Bonding face is the metallic aluminum that step B is formed；Etching is performed etching using the mixed gas 10 of boron chloride and chlorine；Etching
To be carried out under the cavity at being 60 DEG C in temperature, etch period 70s；
F. the photoresist of residual is removed by wet etching；
G. the first wafer 1 and the second wafer 2 are put into bonder in 5 times progress low-temperature bondings of oxygen atmosphere；Oxygen molecule
The bonding face of first wafer 1 and the bonding face of the second wafer 2 are entered by metallic aluminum autoxidation into three oxygen by gas passage
Change two aluminium 8；Bonding temperature is 250 DEG C, bonding pressure 200Kg-500Kg；
H. process annealing is handled；Annealing temperature is 250 DEG C.
Although the illustrative embodiment of the present invention is described above, in order to the technology of the art
Personnel are it will be appreciated that the present invention, but the present invention is not limited only to the scope of embodiment, to the common skill of the art
For art personnel, as long as long as various change in the spirit and scope of the invention that appended claim limits and determines, one
The innovation and creation using present inventive concept are cut in the row of protection.
Claims (10)
1. a kind of structure for being bonded wafer, including the first wafer and the second wafer, it is characterised in that：Second wafer is positioned at the
The top of one wafer, is provided with intermediate layer between first wafer and the second wafer, the intermediate layer include gas passage and
Alundum (Al2O3) layer, the gas passage are arranged in alundum (Al2O3) layer, and gas passage extends transversely through alundum (Al2O3) layer.
2. the structure of bonding wafer according to claim 1, it is characterised in that：The gas passage is alundum (Al2O3) layer
The equidistant gas passage to be formed is etched by mixed gas.
3. the structure of bonding wafer according to claim 2, it is characterised in that：The equidistantly gas passage is groove-like
Passage.
4. the preparation method of the structure of the bonding wafer as described in any one claim in claims 1 to 3, its feature exist
In comprising the following steps：
A. the first wafer and the second wafer are cleaned, dried up；
B. by the equal deposited metal aluminium in the surface of first wafer and second wafer；
C. photoresist is uniformly smeared into the surface of first wafer or second wafer using spin-coating method；
D. by smear photoresist the first wafer or the second wafer carry out successively it is soft baking, addition mask, ultraviolet photoetching with
And photoresist developing technique；For the condition of the soft baking to be placed in vacuum hot plate, baking temperature is 80 DEG C -120 DEG C, during baking
Between be 30s-60s；
E. to thering is the first wafer of photoresist or the second wafer to perform etching and to form gas passage, by the bonding of first wafer
The bonding face of face and second wafer contacts with each other, and is bonded in advance, the bonding face of first wafer and second crystalline substance
Round bonding face is the metallic aluminum that step B is formed；
F. the photoresist of residual is removed by wet etching；
G. first wafer and second wafer are put into bonder and low-temperature bonding, oxygen molecule is carried out under oxygen atmosphere
The bonding face of first wafer and the bonding face of second wafer are entered by the metallic aluminum by the gas passage
Autoxidation is into alundum (Al2O3)；Bonding temperature is 100 DEG C -400 DEG C, bonding pressure 100Kg-1000Kg；
H. process annealing is handled；Annealing temperature is 100 DEG C -400 DEG C.
5. the method for low-temperature bonding wafer according to claim 4, it is characterised in that：Cleaning in step A is using RCA
Wet chemical cleans method, cleaning fluid includes organic solvent, sulfuric acid and hydrogen peroxide used by the RCA wet chemical cleans method
The mixed solution of mixed solution and ammoniacal liquor, hydrogen peroxide and deionized water；In the mixed solution of sulfuric acid and hydrogen peroxide, the sulphur
Acid concentration is 96%, and the concentration of the hydrogen peroxide is 30%, and the volume ratio of the sulfuric acid and the hydrogen peroxide is 4:1；Described
In the mixed solution of ammoniacal liquor, hydrogen peroxide and deionized water, the concentration of the ammoniacal liquor is 29%, and the concentration of the hydrogen peroxide is
30%, the volume ratio of three kinds of liquid is：Ammoniacal liquor:Hydrogen peroxide:Deionized water is 1:1:5；
The method of cleaning comprises the following steps：The table of first wafer and second wafer is removed using the organic solvent
Face greasy dirt；Using the particle for the adsorption for being cleaned by ultrasonic first wafer and second wafer；By the sulfuric acid and double
The mixed solution of oxygen water is heated to 95 DEG C, and first wafer and second wafer are soaked 20 minutes, fast with deionized water
The first wafer and the second wafer that speed is rinsed after immersion remove metal ion；By the mixed of the ammoniacal liquor, hydrogen peroxide and deionized water
Close solution and be heated to 80 DEG C, first wafer and second wafer are soaked 15 minutes, in immersion process described in holding
The mixed solution of ammoniacal liquor, hydrogen peroxide and deionized water it is temperature-resistant, then first after getting immersion express developed with deionized water be brilliant
Circle and the second wafer.
6. the preparation method of bonding wafer according to claim 4, it is characterised in that：Drying in step A is using nitrogen
Gas is dried up.
7. the preparation method of bonding wafer according to claim 4, it is characterised in that：By described first after step A cleanings
Wafer and second wafer are cleaned and/or polished.
8. the preparation method of bonding wafer according to claim 4, it is characterised in that：Deposited metal aluminium in step B
Method using Metalorganic chemical vapor deposition method, plasma enhanced chemical vapor deposition method, atomic layer deposition method, sputtering,
One kind in means of electron beam deposition and pulse laser deposition, the thickness of the metal al deposition is 20nm.
9. the preparation method of bonding wafer according to claim 4, it is characterised in that：Gas passage in step E is recessed
The equidistant gas passage of channel-shaped.
10. the preparation method of bonding wafer according to claim 4, it is characterised in that：Etching in step E uses trichlorine
The mixed gas for changing boron and chlorine performs etching；The etching is carries out under the cavity at being 60 DEG C in temperature, during the etching
Between be 60s-80s.
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