CN107740941A - A kind of preparation method of white LED lamp - Google Patents

A kind of preparation method of white LED lamp Download PDF

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Publication number
CN107740941A
CN107740941A CN201710909468.6A CN201710909468A CN107740941A CN 107740941 A CN107740941 A CN 107740941A CN 201710909468 A CN201710909468 A CN 201710909468A CN 107740941 A CN107740941 A CN 107740941A
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coating
micron
led lamp
led
white light
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许美凤
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Anhui Huateng Agricultural Science And Technology Co Ltd
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Anhui Huateng Agricultural Science And Technology Co Ltd
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7709—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7735—Germanates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/778—Borates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cultivation Of Plants (AREA)

Abstract

A kind of white light LED lamp, it is characterised in that the light fixture includes, circuit board (1), power supply (1 2), lampshade (1 3), inner cover (1 1), LED particle (2), there is coating on the inner cover (1 1).The light fixture can promote the growth of plant, and effectively shorten the growth time of plant.

Description

A kind of preparation method of white LED lamp
Technical field
The present invention relates to a kind of preparation method of white LED lamp.
Background technology
It is more luxuriant that plant is required for the irradiation of sunlight to grow.The light of different wave length is for photosynthesis of plant Influence be it is different, photosynthesis of plant need wavelength of light in 400-700nm or so.400-500nm (blue light) and 610-720nm (feux rouges) contributes maximum, referred to as photosynthesis spectrum for photosynthesis.
Daylight can promote the balancedly growth of plant unexpectedly, but its light efficiency is not high, because substantial amounts of green glow plant does not absorb And reflect and slattern, people have been working hard find the absorption spectrum of simulating plant in recent years, and it is luminous to eat certain in the hope of development Material makes its emission spectrum promote photosynthesis efficiently to greatest extent close to the absorption spectrum of plant to produce RESONANCE ABSORPTION Carry out.So, no matter winter or rainy days, the photosynthesis of greenhouse or greenhouse implants, can normally carry out；LED is just It is that one kind is highly suitable as agricultural lamp, conventional method is that first fluorescent material and epoxy resin or organosilicon are gathered on the market Compound is mixed, and then they are applied on the led device with syringe or nozzle.However, make in this way, it is very difficult to The geometry and thickness of the fluorescent material layer of control, the operation of production can be so caused to bring very big risk；Other market On LED generally provide the light source of different-waveband by different collocation of colour so as to promote plant growth, and provide similar The white led lamps with high-performance and high color rendering index (CRI) of sunlight are few.
The content of the invention
In order to overcome the above-mentioned deficiencies of the prior art, it is an object of the invention to provide a kind of white LED lamp, the LED It is approximate sunlight with high-performance and high color rendering index (CRI), using the teaching of the invention it is possible to provide similar to the white light of sunlight so that highly dense in plant seedlings In the case of degree is bred, growth is better controled over, shortens growing-seedling period, more grows up strong and sturdy.
Invention adopts the following technical scheme that a kind of white light LED lamp, it is characterised in that the light fixture includes, circuit board (1), Power supply (1-2), lampshade (1-3), inner cover (1-1), LED particle (2)；
The circuit board (1) is fixed on lampshade (1-3) bottom, and the LED particle (2) is placed on circuit board (1), described Inner cover (1-1) is located between LED particle (2) and lampshade (1-3), has coating on the inner cover (1-1), the coating is from bottom to top The nano-deposit (3) set gradually, first micron of coating (4), second micron of coating (5) and the 3rd micron of coating (6)；It is described to receive The thickness of rice coating (3) is 10-30nm, first micron of coating (4), the thickness of second micron of coating (5) and the 3rd micron of coating (6) Degree is respectively 10-20 μm.
2nd, a kind of white light LED lamp as claimed in claim 1, it is characterised in that the nano-deposit (3) is silver nanoparticle Coating, thickness 20nm.
3rd, a kind of white light LED lamp as claimed in claim 1, it is characterised in that first micron of coating (4) is red Color fluorescent material micron coating；Second micron of coating (5) is green fluorescent material micron coating；3rd micron of coating (6) is indigo plant Color fluorescent material micron coating.
4th, a kind of white light LED lamp as claimed in claim 1, it is characterised in that (colour developing refers to the CRI of the LED lamp Number) it is 100-108.
Beneficial effect：
1st, the fluorescent material film of depositing homogeneous on the led device of the invention, is obtained each to uniform color temperature and height The White LED devices of performance.
2nd, this patent method equipment therefor makes simple, and cost is low, can effectively facilitate the growth of plant, and can be effective Shorten the growth time of plant.
3rd, nursery of this method suitable for the botanical seedling culturings such as leaf vegetables, flowers, situation can be bred in seedling high density Under, growth is better controled over, shortens growing-seedling period, the more healthy and stronger seedling of production.
4th, the LED component of this patent has high-performance and high color rendering index (CRI), is the White LED device that can send approximate sunlight Part.
Brief description of the drawings
Fig. 1 is the structural representation of this patent；
Fig. 2 is the coating structure schematic diagram of the inner cover of this patent.
Embodiment
With reference to specific embodiment, the present invention is expanded on further.
As illustrated, a kind of white light LED lamp, it is characterised in that the light fixture includes, circuit board (1), power supply (1-2), lamp Cover (1-3), inner cover (1-1), LED particle (2)；
The circuit board (1) is fixed on lampshade (1-3) bottom, and the LED particle (2) is placed on circuit board (1), described Inner cover (1-1) is located between LED particle (2) and lampshade (1-3), has coating on the inner cover (1-1), the coating is from bottom to top The nano-deposit (3) set gradually, first micron of coating (4), second micron of coating (5) and the 3rd micron of coating (6)；It is described to receive The thickness of rice coating (3) is 10-30nm, first micron of coating (4), the thickness of second micron of coating (5) and the 3rd micron of coating (6) Degree is respectively 10-20 μm.
The nano-deposit (3) is silver nanoparticle coating, thickness 20nm.
First micron of coating (4) is red fluorescence material micron coating；Second micron of coating (5) is green fluorescence material Expect micron coating；3rd micron of coating (6) is blue fluorescent material micron coating.
The CRI (colour rendering index) of the LED lamp is 100-108.
A kind of foregoing preparation method of white LED lamp, comprises the following steps：
Step 1: in the preparation of LED component metal nano coating
LED component is put into sputtering chamber, rare gas is passed through in sputtering chamber so that the air pressure in sputtering chamber is 2.5- 3.5Pa, sputtering sedimentation is carried out to metal targets, sputtering current 3-6mA, sputtering time 30-100s, being placed in purity afterwards is It is heat-treated in 99.99% nitrogen atmosphere, forms the metal nano that thickness is 10-30nm after heat treatment on the led device Coating；
Step 2: the preparation of suspension
(1) red fluorescence material is placed in solvent, forms the first mixing liquid that concentration is 5g/L-10g/L；Green fluorescence Material is placed in solvent, forms the second mixing liquid that concentration is 5g/L-10g/L；Blue fluorescent material is placed in solvent, is formed Concentration is 5g/L-10g/L the 3rd mixing liquid；
Step 3, the preparation of micron coating
A, the LED component with metal nano coating prepared by step 1 is placed in reactor first, in the reactor 2000sccm~4000sccm oxygen stream is introduced, heats the temperature of LED component to 450 DEG C~850 DEG C；
B, vaporizer is sent into after the first mixing liquid prepared by step 2 secondly being heated into 100 DEG C~300 DEG C makes it Gasification, form the first mixed gas；First mixed gas is passed through by temperature with 2000sccm~6000sccm flow by argon gas The pipeline for 150 DEG C~350 DEG C is spent into reactor, both can be in the LED component with metal nano coating of step A Upper formation first layer coating；
Step 4, repeat step three, by the second mixing liquid prepared by step 2 and the 3rd mixing liquid respectively in LED Device forms second layer coating and third layer coating；
Rare gas described in step 1 is selected from argon gas, and the air pressure in sputtering chamber is 3Pa, sputtering current 4mA, during sputtering Between be 60s, the temperature of heat treatment is 100-300 DEG C, heat treatment time 5-20mins, and the thickness of metal nanometer thin film is 20nm。
The metallic target is silver, forms the silver nanoparticle film that thickness is 20nm after heat treatment on the led device.
Solvent described in step 2 is by isopropanol or isobutanol using mass ratio as 1-5:3-7 is formed.
First layer, the second layer, the thickness of coating of third layer described in step 3 are respectively 10-20 μm.Preferably 15 μm.
The preparation process of heretofore described red, green and blue fluorescent material is as described below：
(1) preparation of red fluorescence material：
(1) first respectively by Gd (NO3)3·6H2O、Yb203And Pr2O3, it is respectively placed in mortar and grinds 15-30min, will The particle of grinding is dissolved in concentrated nitric acid, is configured to the nitrate solution that pH is 4-6；
(2) by CaCO3、H3BO3(wherein solid-liquid mass ratio is 1-1.5 in addition ionized water:10-30), 30-45min is stirred It is standby to obtain suspension；
(3) by (NH4)6Mo7O24·4H2O、NH4VO3It is placed in distilled water that (wherein solid-liquid mass ratio is 1-1.5:10-30), Ammoniacal liquor regulation pH is added while stirring so that pH is controlled in 7-8；
(4) liquid of step (1), (2) and (3) is mixed and stirred for 60-90min, 60- is warming up to 15 DEG C/min afterwards 80 DEG C of stirring 90-120min, are put in drying baker after reaction precipitate is cleaned 3-5 times using deionized water and dry, will dry Material progress ball milling mixing afterwards is uniform, is put into Muffle furnace and preheats 30-60min at 200-300 DEG C in hot room, it After be warming up to 500-600 DEG C sintering 1-2h, be warming up to 700-1200 DEG C burning 1-4h, room temperature is naturally cooling to afterwards, after roasting Product be ground acquisition and can be prepared by Gd1-x-yCaB(MoO4)(VO4)2:xYb3+,yPr3+.Wherein 0.04≤x≤0.12, x/ Y=1-3.
(2) preparation of green fluorescent material
(1) first by MgCO3、MnCO3And Bi2O3It is ground and adds in ethanol and is disperseed to obtain dispersion liquid, this point The solid-liquid mass ratio of dispersion liquid is 1-3:15-30；
(2) by SnO2(NH4)2HPO4Insert in crucible, 200-300 DEG C of stirring 30-90min be warming up in hot room, 300-500 DEG C of insulation 1-2h is warming up to, natural cooling, is washed 3-5 times using deionization, after drying, solid is added to phosphoric acid In (mass ratio of solid and phosphoric acid is 1-5:1-15), 150 DEG C are heated to, is incubated 2-5h, cold filtration obtains solid powder；
(3) by LiNO3、Sc2O3Mixed with the dispersion liquid that step (1) obtains with the solid powder prepared by step (2) Stir, and add ammoniacal liquor and adjust pH value to 8-9, sediment is taken out with centrifuge, washed 3-5 times by deionized water, It is put into after drying in high temperature furnace in N2∶H2Under=95: 5 atmosphere reducing atmosphere condition, 1-4h is heat-treated at 600-700 DEG C, with 15 DEG C/min be warming up to 800-1200 DEG C heat treatment 2-5h, after high temperature furnace cooling after, product is ground, washed, drying To final products Mg1-a-bScLi2(SnO4)(PO4):aMn2+,bBi3+(wherein a=0.02-0.10, a/b=1-2)；
(3) preparation of blue fluorescent material：
(1) first by Eu2O315-45min is ground, obtains powder, adds SrCO3Put into high temperature furnace in 300-600 3-6h is incubated at DEG C, grinding after cooling down is taken out and obtains solid powder；
(2) by GeO2And SiO2Insert in crucible, addition mass fraction is 10% citric acid, while adds mass fraction and be 20% ethanol be mixed and stirred for uniformly, being warming up to 200-300 DEG C, stirs 1-3h while insulation, natural cooling is standby；
(3) by Al (OH)3, step (1) and step (2) product close and stir, and add ammoniacal liquor and adjust pH value to 8- 10, sediment is taken out with centrifuge, washs 3-5 times, is put into after drying in high temperature furnace in N by deionized water2∶H2=95: 5 Atmosphere reducing atmosphere condition under, 700-800 DEG C be heat-treated 2-3h, be warming up to 900-1100 DEG C heat treatment 3-6h, treat high temperature After stove cooling, product is ground, washed, drying to final products Sr1-mAl2(SiO3)(GeO5):mEu2+(wherein m =0.04-0.12).
It has been investigated that：
(1) the enterprising row metal silver nanoparticle coating of LED component
The thickness of argent nano-deposit is 20nm, is found by numerous studies, can be had influence on by nano silver plating Other first, second, and third coating, the first coating being especially close to, by the way that surface plasma body resonant vibration coupling occurs Close, greatly improve the launching efficiency of Yb ions and Pr ions；So as to strengthen the luminous intensity of red fluorescence material, cause second The luminous intensity of layer and third layer strengthens, and is found by research, by with the addition of the strong of nano silver plating blue light and feux rouges Degree can increase 1.6-1.9 times, 1.5-1.7 times respectively.
(2) red fluorescence material prepared by
1st, H is found by research3BO3Changes of contents in the present invention does not produce to the position of the emission peak of sample light Influence, but the intensity for launching light has an impact, as Gd (NO3)3·6H2O and H3BO3Amount of substance ratio is 0.88:Lighted when 1 Intensity reaches maximum, afterwards with H3BO3Content increase, luminous intensity is gradually reduced, and this is probably due to H3BO3Addition Amount increase, makes it easily form cluster, reduces the crystallinity of sample, so as to reduce the luminous efficiency of fluorescent material；
2nd, Pr ions, with the increase of Pr ion concentrations, the intensity of the luminescent properties of the fluorescent material gradually increases, when containing When amount x reaches 0.12, luminous intensity reaches maximum, afterwards as the increase of Pr ion concentrations, the particle concentration decline on the contrary, this It is due to the concentration quenching effect of ion；
3rd, mixed using Yb and Pr elements and instead of a part of Gd elements.The synergy mixed by Yb and Pr elements, Can effectively strengthen the luminous intensity of fluorescent material, and there is synergy between Yb and Pr elements, with content increase and Change, red emission peak of the red fluorescence material at 610-780nm has obtained very big reinforcement, when the element of Yb and Pr elements When x=0.09, y=0.03, the intensity of emission peak is 4.69 times when not mixing Yb and Pr elements, is only to mix a kind of element When 3-4 times；
4th, in terms of temperature, heating progress high temperature sintering can obtain again after carrying out low-temperature sintering first for a period of time Optimal luminous intensity, found according to experiment, 40min is preheated at 250 DEG C in hot room first in hot room, in 550 2h is sintered at DEG C, is warming up to 1000 DEG C of burning 5h, significantly more efficient can be excited wavelength, and the crystal property of molybdic acid can also increase By force, this causes the luminous intensity of sample relative to that directly can improve 15% by the way of high temperature sintering, when temperature exceedes At 1200 DEG C, the perfection of crystal of molybdic acid compound can be destroyed, this be for the luminescent properties of luminescent material it is unfavorable, because This " first in hot room is preheating 40min at 250 DEG C in hot room, is sintering 2h at 550 DEG C, be warming up to 1000 DEG C Burn 5h ", the optimal preparation temperature of fluorescent material；
5th, it is less than 10 μm by the particle diameter of the red fluorescence material obtained by the inventive method, wherein 1-5 μm accounts for 75%.
(3) green fluorescent material prepared by：
1st, find that the addition of Li ions influences the emission spectrum distribution of material by research, but its luminous intensity is bright It is aobvious to enhance, because Li ions act as the counterion of low price electric charge, when the amount of substance ratio of Mg ions and Li ions is 0.88: When 2, the increasing degree of its luminous intensity is maximum, amplification 34.9%；Therefore the doping of Li ions, can promote the ion mixed Preferably enter in the lattice of matrix, play charge compensation effect, effectively enhance the transmission between lattice energy, make material Luminous intensity significantly increase；
2nd, with the increase of Mn ion concentrations, emission band occurs red shift and along with the broadening of halfwidth, with Mn The increase of ion concentration, luminous intensity gradually strengthen and reach maximum in a=0.10, are further added by Mn ion concentrations and then send out Light starts to weaken.This is generally interpreted as concentration quenching effect；
3rd, mixed using Mn and Bi elements and instead of a part of Mg elements.The synergy mixed by Mn and Bi elements, The luminous intensity of fluorescent material can be effectively improved, with the increase and change of content, as the element a=of Mn and Bi elements When 0.08, y=0.04, the intensity of emission peak is 4.69 times when not mixing Mn and Bi elements, and is only to mix a kind of element When 2.8-3.7 times；
4th, it is less than 20 μm by the particle diameter of the green fluorescent material obtained by the inventive method, wherein 1-10 μm accounts for 85%.
(4) blue fluorescent material prepared by：
1st, found by research, doping Eu not only can promote its blue wave band to expand to 405-470nm, and pass through indigo plant The synergy of each element of color fluorescent material can effectively strengthen the luminous intensity of the fluorescent material so that product it is luminous strong Degree improves more than 4.58 times.Illustrate that Eu serves sensibilization.The optimum doping amount m=0.08 of Eu ions is found by research；
2nd, the particle diameter of blue fluorescent material is less than 15 μm, and wherein 1-8 μm accounts for 85%.
(5) preparation of this patent micron coating depositing homogeneous fluorescent material, this method can obtain glimmering in LED Light LED surface precipitation is uniform, by the control of temperature and time, is capable of the generation of the suppression dephasign of bottom line, has each To uniform color temperature, while it is adapted to produce in enormous quantities.
(6) LED component that this patent method is prepared has high-performance and high color rendering index (CRI), i.e., can send approximation The white light of sunlight, by test：
The electrical efficiency of ordinary white LED product is 70-100 (1m/W), and the electrical efficiency of this patent is 100-120 (1m/ W), preferably 115；
The CRI (colour rendering index) of ordinary white LED product is 60-85, and the CRI (colour rendering index) of this patent is 100-108, It is preferred that 105；
The service life of ordinary white LED product is that (L70, h) is 30000-70000, and the service life of this patent is (L70, h) is 70000-120000.
(7) the white light LED prepared by this patent can send 610-780 red bands light and 405-470nm bluenesss The light of wave band.
Plant is irradiated using the present apparatus, irradiation time 6:00-21:00 (other times are placed in normal growth ring Border) so that the optical density of plant surface is 2000-6000Lux；
By taking chrysanthemum as an example, the rooting rate of irradiation of the LED of this patent is used as 99%, using the rooting rate of solar radiation For 79%；The height of the chrysanthemum of the irradiation of the LED of this patent is used after 15 days compared to the high 50- of height using solar radiation 65%；The survival rate after the irradiation 40 days of the LED of this patent is used to use the survival rate of solar radiation for 98% as 68%；
For pumpkin seedling, the rooting rate of irradiation of the LED of this patent is used as 99%, using taking root for solar radiation Rate is 79%；The height of the seedling of the irradiation of the LED of this patent is used after 5 days as 90mm, the children grown using solar radiation The height of seedling is 50mm.
It should be understood that these embodiments are only illustrative of the invention and is not intended to limit the scope of the invention.In addition, it is to be understood that After the content of the invention lectured has been read, those skilled in the art can make various changes or modifications to the present invention, these The equivalent form of value equally falls within the application appended claims limited range.

Claims (4)

1. a kind of white light LED lamp, it is characterised in that the light fixture includes, circuit board (1), power supply (1-2), and lampshade (1-3) is interior Cover (1-1), LED particle (2)；
The circuit board (1) is fixed on lampshade (1-3) bottom, and the LED particle (2) is placed on circuit board (1), the inner cover (1-1) is located between LED particle (2) and lampshade (1-3), has coating on the inner cover (1-1), and the coating is from bottom to top successively The nano-deposit (3) of setting, first micron of coating (4), second micron of coating (5) and the 3rd micron of coating (6)；The nanometer plating The thickness of layer (3) be 10-30nm, first micron of coating (4), and the thickness of second micron of coating (5) and the 3rd micron of coating (6) divides Wei not be 10-20 μm.
A kind of 2. white light LED lamp as claimed in claim 1, it is characterised in that the nano-deposit (3) is silver nanoparticle coating, Thickness is 20nm.
3. a kind of white light LED lamp as claimed in claim 1, it is characterised in that first micron of coating (4) is red glimmering Luminescent material micron coating；Second micron of coating (5) is green fluorescent material micron coating；3rd micron of coating (6) is glimmering for blueness Luminescent material micron coating.
A kind of 4. white light LED lamp as claimed in claim 1, it is characterised in that the CRI (colour rendering index) of the LED lamp For 100-108.
CN201710909468.6A 2017-09-29 2017-09-29 A kind of preparation method of white LED lamp Withdrawn CN107740941A (en)

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Publication number Priority date Publication date Assignee Title
CN1905227A (en) * 2005-07-26 2007-01-31 三星电机株式会社 Light emitting diode package with diffuser and method of manufacturing the same
CN101526179A (en) * 2009-04-20 2009-09-09 南京工业大学 Pre-packaged LED illuminating lamp and preparation method thereof
CN101571238A (en) * 2009-06-01 2009-11-04 南京工业大学 Fluorescent powder prefabricated film-based LED illuminating lamp and manufacturing method thereof
CN102121591A (en) * 2010-12-23 2011-07-13 大连海事大学 White LED light source and manufacturing method of phosphor thereof
CN102959310A (en) * 2010-06-28 2013-03-06 株式会社东芝 Led bulb

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1905227A (en) * 2005-07-26 2007-01-31 三星电机株式会社 Light emitting diode package with diffuser and method of manufacturing the same
CN101526179A (en) * 2009-04-20 2009-09-09 南京工业大学 Pre-packaged LED illuminating lamp and preparation method thereof
CN101571238A (en) * 2009-06-01 2009-11-04 南京工业大学 Fluorescent powder prefabricated film-based LED illuminating lamp and manufacturing method thereof
CN102959310A (en) * 2010-06-28 2013-03-06 株式会社东芝 Led bulb
CN102121591A (en) * 2010-12-23 2011-07-13 大连海事大学 White LED light source and manufacturing method of phosphor thereof

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