CN107731346A - Low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry and preparation method - Google Patents
Low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry and preparation method Download PDFInfo
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- CN107731346A CN107731346A CN201711204680.9A CN201711204680A CN107731346A CN 107731346 A CN107731346 A CN 107731346A CN 201711204680 A CN201711204680 A CN 201711204680A CN 107731346 A CN107731346 A CN 107731346A
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- silver powder
- powder
- solar energy
- front electrode
- crystal silicon
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 29
- 239000004332 silver Substances 0.000 title claims abstract description 29
- 239000002002 slurry Substances 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 title claims abstract description 20
- 238000009766 low-temperature sintering Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000007613 slurry method Methods 0.000 title abstract description 5
- 239000000843 powder Substances 0.000 claims abstract description 35
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000000428 dust Substances 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 19
- 229920005989 resin Polymers 0.000 claims abstract description 19
- 238000002844 melting Methods 0.000 claims abstract description 15
- 230000008018 melting Effects 0.000 claims abstract description 15
- 238000007873 sieving Methods 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 238000000498 ball milling Methods 0.000 claims abstract description 10
- 238000010791 quenching Methods 0.000 claims abstract description 10
- 230000000171 quenching effect Effects 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000003756 stirring Methods 0.000 claims abstract description 9
- 239000002270 dispersing agent Substances 0.000 claims abstract description 8
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 10
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- -1 NC Nitroncellulose Polymers 0.000 claims description 7
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 7
- 229920001249 ethyl cellulose Polymers 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 208000015924 Lithiasis Diseases 0.000 claims description 5
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 claims description 5
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 229910000464 lead oxide Inorganic materials 0.000 claims description 5
- CJJMLLCUQDSZIZ-UHFFFAOYSA-N oxobismuth Chemical class [Bi]=O CJJMLLCUQDSZIZ-UHFFFAOYSA-N 0.000 claims description 5
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 4
- 239000001856 Ethyl cellulose Substances 0.000 claims description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 230000006698 induction Effects 0.000 claims description 4
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical class [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 4
- 229910001950 potassium oxide Inorganic materials 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical group CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 2
- 229920000896 Ethulose Polymers 0.000 claims description 2
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 claims description 2
- 239000001293 FEMA 3089 Substances 0.000 claims description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 claims description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 2
- 229910001948 sodium oxide Inorganic materials 0.000 claims description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 2
- 239000002023 wood Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims 1
- 229960004643 cupric oxide Drugs 0.000 claims 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims 1
- 229940112669 cuprous oxide Drugs 0.000 claims 1
- 238000007689 inspection Methods 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 18
- 238000005245 sintering Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 5
- FUGIIBWTNARRSF-UHFFFAOYSA-N decane-5,6-diol Chemical compound CCCCC(O)C(O)CCCC FUGIIBWTNARRSF-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011267 electrode slurry Substances 0.000 description 3
- 239000000320 mechanical mixture Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910017982 Ag—Si Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000440 bentonite Substances 0.000 description 1
- 229910000278 bentonite Inorganic materials 0.000 description 1
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 229910003447 praseodymium oxide Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry and preparation method thereof, comprise the following steps：1) glass dust is prepared：Raw material is weighed, is well mixed, melting is carried out, then takes out, water quenching, crushing, ball milling, sieving, is sieved after drying and obtains glass dust；2) organic carrier is prepared：Resin and organic solvent are weighed, resin is dissolved in organic solvent, dispersant and anti-settling agent is added as auxiliary agent, stirs to form organic carrier；3) silver powder, glass dust, metal oxide powder are weighed to be added in organic carrier, is stirred, is ground, vacuum outgas, detection is qualified to produce silver paste of the present invention.
Description
Technical field
The invention belongs to electronic material, is related to electronics, chemical industry and Material Field, is related to a kind of front electrode of solar battery
Silver paste and preparation method, and in particular to low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry and preparation method.
Background technology
Crystal silicon solar energy battery is current utility ratio highest solar cell, but is exceeded because it continues usage time
50 years, metallic electrode was the critical material of crystal silicon solar energy battery, especially grid electrode front material, directly affects solar energy
The electricity conversion of battery, the performance indexs such as shadow, series resistance are filled, so, the quality and performance of front electrode silver slurry
Quality directly decide the service life and the dough softening of battery.Front side silver paste is realized by silk-screen printing technique and metallized, and is
Shading surface is reduced as far as possible, while to corrode SiNx antireflective coatings, is formed comparatively ideal Ag-Si Ohmic contacts, is realized p-n junction
Effective export of electric current, but corrode the structure of the too deep core, i.e. p-n junction that can destroy battery, battery performance is reduced very
To failure, corrosion is too shallow to be prevented electric current battery conversion efficiency is low from effectively exporting, therefore, by electrode slurry performance
Improve, realize that corrosion of the slurry to SiNx antireflective coatings is carried out compared with low temperature, be both avoided that under temperature higher strip part and metallized
Shi Zaocheng elements diffusions strengthen the influence to p-n, and and can ensures that corrosion is more thorough, and battery performance is stable, so, compared with low temperature
The sintering of electrode slurry is that battery realizes one of efficient, stable critical path.
Front electrode silver slurry is mainly made up of conducting powder, inorganic cementitious material, organic carrier and additive, and conducting powder is being burnt
Conducting wire is formed after knot, and realizes the current lead-through between battery and external welding；Inorganic cementitious material is in sintering process
SiNx antireflective coatings are burnt, realize the UNICOM between silver electrode and silicon and bonding；Organic carrier makes electrode slurry have good print
Brush performance, realize preferable print request.
As the critical material of crystal silicon solar energy battery, prior art is to this existing more research.In patent
In CN2301310440104, rhodium, ruthenium or iridium simple substance or rhodium-containing, ruthenium or iridic compound are added in the slurry as sintering aidses,
The generation that can effectively prevent bypass from tying, improve the yield rate of cell piece；In patent CN201310429619, by addition containing indium and
Tin compound, strengthen the adhesion strength between electrode and silicon substrate, reduce string resistance.
Document above and existing patented technology all pertain only to changing to front electrode silver slurry binding material, printing etc.
It is kind, but all improve the performance of front electrode silver slurry not from the point of view of conductive component, the purpose of the present invention is exactly to pass through
The formula design of conductive component, prepares the front electrode silver slurry that sintering temperature is low, conversion efficiency is stable, sintering temperature is low.
The content of the invention
Present invention aims at low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry and preparation method is provided, use
In substituting the current slurry for needing to print twice, realize that lower temperature sinters.
Low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry of the present invention, it is composed of the following components：
Silver powder 67.0-91.0wt%, glass dust 1.0-8.0wt%, 0-3.0wt% metal oxide powder, organic carrier
6.0-30.0wt%；
Described silver powder, described silver powder, preferably by 68.0-87.0wt% spherical silver powder and 13.0-32.0wt%
Nano-silver powder composition, the particle diameter of spherical silver powder is 0.8-1.8 μm, tap density 2.8-6.0g/cm3, nano-silver powder
Particle diameter is 0.03-0.20 μm, tap density 0.9-1.5g/cm3；The nano-silver powder is prepared using rf induction plasma
It is prepared by technology.
The invention further relates to the preparation method of above-mentioned low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry, bag
Include following steps：
1) glass dust is prepared：Raw material is weighed, is well mixed, melting is carried out, then takes out, water quenching, crushing, ball milling, sieving,
Sieving obtains glass dust after drying；
2) organic carrier is prepared：Weigh resin and organic solvent, resin be dissolved in organic solvent, add dispersant and
Anti-settling agent stirs to form organic carrier as auxiliary agent；
3) silver powder, glass dust, metal oxide powder are weighed to be added in organic carrier, is stirred, is ground, vacuum takes off
Gas, detection is qualified to produce silver paste of the present invention.
Raw material is weighed described in step 1) of the present invention, preferably weighs 8.0-30.0wt% bismuth oxides, 20.0-60.0wt% oxygen
Change several in tellurium, 20.0-60.0wt% lead oxide, 1.0-5.0wt% lithias, 0-0.3wt% potassium oxides.
It is well mixed described in step 1), melting is carried out, is then taken out, water quenching, crushing, ball milling, sieving, is sieved after drying
Glass dust is obtained, after preferably above-mentioned raw materials are well mixed with three-dimensional material mixer, loaded on platinum crucible, is placed in high temperature resistance furnace
Melting is carried out, in 900-1000 DEG C of melting 1 hour, water quenching, crushing, ball milling, sieving after taking-up, is sieved after being dried in 65-75 DEG C
Obtain glass dust, D100≤1.8 μm.
Resin described in step 2), preferably ethyl cellulose, NC Nitroncellulose, ethylhydroxyethylcellulose, wood rosin
In one or more, when mixing when be arbitrary proportion；
Described organic solvent, preferably terpineol, turpentine oil, butyl, dibutyl ethylene glycol ether, butyl card must
One or more in alcohol acetate, dipropylene glycol monomethyl ether, Tripropylene glycol monomethyl Ether, it is arbitrary proportion when mixing；
Described dispersant, preferred surfactant Span 85；
Described anti-settling agent, preferably organobentonite.
Weighing described in step 2), according to 5.0-16.0wt% resins, 80.0-90.0wt% organic solvents, 6.0-
6.0wt% dispersants, 0.5-1.6wt% anti-settling agents；
Resin is dissolved in organic solvent described in step 2), it is equal as auxiliary agent, stirring to add dispersant and anti-settling agent
Even formation organic carrier, preferably organic solvent is added in rustless steel container and mixed, then resin is added in whipping process, heated up
To 70-90 DEG C, after resin has been completely dissolved, it is cooled at 40-50 DEG C and adds surfactant and anti-settling agent, be filtrated to get
The bright organic carrier with good print.
Weigh silver powder, glass dust, metal oxide powder described in step 3) are added in organic carrier, preferably weigh
82.0-91.0wt% silver powder, 1.5-6.0wt% glass dust, 0-2.0wt% metal oxide powder, are added to 6.0-14.0wt%
In organic carrier；
Silver powder described in step 3), preferably by 68.0-87.0wt% spherical silver powder and 13.0-32.0wt% nanometer
Silver powder forms, and the particle diameter of spherical silver powder is 0.8-1.8 μm, and the particle diameter of nano-silver powder is 0.03-0.2 μm；The nano-silver powder
Prepared using rf induction plasma technology of preparing.
Described metal oxide powder, preferably zinc oxide, bismuth oxide, boron oxide, magnesia, sodium oxide molybdena, nickel oxide, oxidation
Copper, zirconium oxide, cerium oxide, praseodymium oxide, vanadium oxide, phosphorus pentoxide, lanthana, titanium oxide, the one or more of cobalt oxide are mixed
Close, be arbitrary proportion when mixing.
Stirring described in step 3), grinding, vacuum outgas, is preferably stirred with high speed dispersor, uses three rollers
Grinder grind 6-10 times, then with stir deaeration machine vacuum outgas.
Compared with prior art, the present invention has advantages below：
1st, the silver paste function admirable that the present invention obtains, sintering temperature is low, and sintering window is wide：740-820℃/1-3s；Silk screen
Printing quality is excellent：400 mesh stainless steel cloths are printed, and line width≤24 μm (are tested) with film thickness gauge；Solderability is excellent, with 350 DEG C of flatirons
Welding is welded on electrode manually, with 180 ° of tensiometer, peeled off with 0.3cm/s speed, test welding pulling force is attached
Put forth effort：≥6.5N/mm2；
2nd, photoelectric transformation efficiency is high：Monocrystalline silicon piece >=21.5%, polysilicon chip >=20.5%, (solar simulator is being marked
Tested under the conditions of standard)；
3rd, the present invention is because adding nano-silver powder, and inorganic cementitious material formula is improved, and metallizing temperature substantially drops
It is low, it is smaller than 820 DEG C and realizes preferable sintering.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, the present invention is carried out below further
Describe in detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to limit this hair
It is bright.
Embodiment 1：
Step A：Prepare glass dust.Weigh 8.0wt% bismuth oxides, 27.0wt% tellurium oxides, 60.0wt% lead oxide,
5.0wt% lithias, 0.3wt% potassium oxides.After with three-dimensional material mixer, above-mentioned raw materials are well mixed, loaded on platinum crucible, put
Melting is carried out in high temperature resistance furnace, in 1000 DEG C of meltings 1 hour, water quenching, crushing, ball milling, sieving after taking-up, in 65 DEG C of dryings
Sieving obtains glass dust afterwards, and average grain diameter is 0.3-1.5 μm；
Step B：Prepare organic carrier.Weigh 63.0wt% butyls, 12.0wt% dibutyl ethylene glycol ethers,
12.0wt% butyl carbitol acetates, 6.0wt% ethyl celluloses, 3.5wt% surfactant Span 85,0.5wt%
Anti-settling agent organobentonite.First butyl, dibutyl ethylene glycol ether and butyl carbitol acetate are added stainless
Mixed in steel container, then ethyl cellulose is added in whipping process, be warming up to 70-90 DEG C, after resin has been completely dissolved, drop
For temperature to surfactant Span 85 and organobentonite is added at 40-50 DEG C, being filtrated to get transparent has good print
Organic carrier；
Step C：From conductive silver powder.Silver powder is two kinds of silver powder mixtures, wherein it is 0.8 that special shape, which includes average grain diameter,
μm spherical silver powder, its tap density 2.8g/cm3；Average grain diameter is 0.08 μm of nano-silver powder, tap density 1.2g/
cm3；Above conductive powder body passes through mechanical mixture according to the weight ratio of the spherical silver powder of 68.0wt% and 32.0wt% nano-silver powders
Uniformly, it can mutually fill, be crosslinked in slurry sintering process, reach the target of good solderability.
Step D：Prepare electrode slurry.82.0% conductive silver powder by mass percentage, 7.4% silver coated aluminum powder, 0.6%
Metal oxide powder (metal oxide is zinc oxide, bismuth oxide, boron oxide, magnesia, sodium oxide molybdena, nickel oxide, cupric oxide,
Zirconium oxide, cerium oxide, praseodymium oxide, vanadium oxide, phosphorus pentoxide, lanthana, titanium oxide, one or more of mixing of cobalt oxide),
2.0% glass dust, 8.0% organic carrier dispensing simultaneously mixes, is stirred with de-airing mixer, be tuned into pasty state, with three rollers
Grinder is ground 6-8 times, that is, obtains piezo-resistance electrode silver plasm.
The performance of obtained front electrode slurry：
Slurry fineness：≤5μm；
Silk-screen printing：400 mesh stainless steel cloths print, line width≤24 μm；
Sintering temperature：740-820℃/1-3s；
Conversion efficiency：Monocrystalline silicon piece >=21.5%, polysilicon chip >=20.5%；
Adhesive force：≥6.6N/mm2；
Metallizing temperature：≤810℃.
Embodiment 2：
Step A：Weigh 30.0wt% bismuth oxides, 20.0wt% tellurium oxides, 49.0wt% lead oxide, 1.0wt% lithias,
0.1wt% potassium oxides.After with three-dimensional material mixer, above-mentioned raw materials are well mixed, loaded on platinum crucible, it is placed in high temperature resistance furnace
Carry out melting, in 950 DEG C of meltings 1 hour, water quenching, crushing, ball milling, sieving after taking-up, after being dried in 75 DEG C sieving obtain glass
Powder, average grain diameter are 0.3-1.5 μm；
Step B：Prepare organic carrier.Weigh 64.0wt% butyls, 15.5wt% dibutyl ethylene glycol ethers,
10.0wt% butyl carbitol acetates, 5.0wt% ethyl celluloses, 6.0wt% surfactant Span 85,1.6wt%
Anti-settling agent organobentonite.First butyl, dibutyl ethylene glycol ether and butyl carbitol acetate are added stainless
Mixed in steel container, then ethyl cellulose is added in whipping process, be warming up to 70-100 DEG C, after resin has been completely dissolved,
It is cooled at 40-50 DEG C and adds surfactant Span 85 and organobentonite, being filtrated to get transparent has good print
Organic carrier；
Step C：From conductive silver powder.Silver powder is two kinds of silver powder mixtures, wherein it is 1.8 that special shape, which includes average grain diameter,
μm spherical silver powder, its tap density 6.0g/cm3；Average grain diameter is 0.03 μm of nano-silver powder, tap density 0.2g/
cm3；Above conductive powder body passes through mechanical mixture according to the weight ratio of the spherical silver powder of 87.0wt% and 13.0wt% nano-silver powders
Uniformly, it can mutually fill, be crosslinked in slurry sintering process, reach the target of good solderability.
Step D：Prepare electrode slurry.68.0% conductive silver powder by mass percentage, 16.0% silver coated aluminum powder,
6.0% glass dust, 10.0% organic carrier dispensing simultaneously mixes, is stirred with de-airing mixer, be tuned into pasty state, with three rollers
Grinder is ground 6-8 times, that is, obtains piezo-resistance electrode silver plasm.
The performance of obtained front electrode slurry：
Slurry fineness：≤5μm；
Silk-screen printing：400 mesh stainless steel cloths print, line width≤24 μm；
Sintering temperature：760-860℃/1-3s；
Conversion efficiency：Monocrystalline silicon piece >=21.5%, polysilicon chip >=20.5%；
Adhesive force：≥6.8N/mm2；
Metallizing temperature：≤818℃.
Embodiment 3：
Step A：Weigh 17.0wt% bismuth oxides, 60.0wt% tellurium oxides, 20.0wt% lead oxide, 3.0wt% lithias.
After above-mentioned raw materials are well mixed with three-dimensional material mixer, loaded on platinum crucible, it is placed in high temperature resistance furnace and carries out melting, in 900
DEG C melting 1 hour, water quenching, crushing, ball milling, sieving after taking-up, after being dried in 70 DEG C sieving obtain glass dust, average grain diameter is
0.3-1.5μm；
Step B：Prepare organic carrier.Weigh 60.0wt% butyls, 8.0wt% terpineols, 12.0wt% bis-
Butyl cellosolve, 10.0wt% butyl carbitol acetates, 12wt% ethyl celluloses, 4.0wt% NC Nitroncelluloses,
3.0wt% surfactant Span 85,1.0wt% anti-settling agent organobentonite.First by butyl, terpineol,
Dibutyl ethylene glycol ether and butyl carbitol acetate, which are added in rustless steel container, to be mixed, then ethyl fibre is added in whipping process
Dimension element, is warming up to 70-90 DEG C, after resin has been completely dissolved, is cooled at 40-50 DEG C and adds surfactant Span 85 and have
Machine bentonite, it is filtrated to get the transparent organic carrier with good print；
Step C：From conductive silver powder.Silver powder is two kinds of silver powder mixtures, wherein it is 1.2 that special shape, which includes average grain diameter,
μm spherical silver powder, its tap density 4.5g/cm3；Average grain diameter is 0.2 μm of nano-silver powder, tap density 1.5g/
cm3；Above conductive powder body passes through mechanical mixture according to the weight ratio of the spherical silver powder of 82.0wt% and 18.0wt% nano-silver powders
Uniformly, it can mutually fill, be crosslinked in slurry sintering process, reach the target of good solderability.
Step D：Prepare electrode slurry.76.0% conductive silver powder by mass percentage, 2.0% silver coated aluminum powder,
(metal oxide is zinc oxide to 1.2% metal oxide powder, bismuth oxide, boron oxide, magnesia, sodium oxide molybdena, nickel oxide, oxygen
Change copper, zirconium oxide, cerium oxide, praseodymium oxide, vanadium oxide, phosphorus pentoxide, lanthana, titanium oxide, the one or more of cobalt oxide
Mixing), 4.8% glass dust, 16.0% organic carrier dispensing simultaneously mixes, and is stirred with de-airing mixer, is tuned into pasty state,
Ground 6-8 times with three-roll grinder, that is, obtain piezo-resistance electrode silver plasm.
The performance of obtained front electrode slurry：
Slurry fineness：≤5μm；
Silk-screen printing：400 mesh stainless steel cloths print, line width≤24 μm；
Sintering temperature：760-860℃/1-3s；
Conversion efficiency：Monocrystalline silicon piece >=21.5%, polysilicon chip >=20.5%；
Adhesive force：≥6.6N/mm2；
Metallizing temperature：≤812℃.
Certainly, the present invention can also have other various embodiments, ripe in the case of without departing substantially from spirit of the invention and its essence
Various corresponding changes and deformation, but these corresponding changes and deformation can be made according to the present invention by knowing those skilled in the art
Protection scope of the present invention should all be belonged to.
Claims (10)
1. low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry, it is characterised in that composed of the following components：
Silver powder 67.0-91.0wt%, glass dust 1.0-8.0wt%, 0-3.0wt% metal oxide powder, organic carrier 6.0-
30.0wt%；
Described silver powder, it is made up of the nano-silver powder of 68.0-87.0wt% spherical silver powder and 13.0-32.0wt%, class ball
The particle diameter of shape silver powder is 0.8-1.8 μm, tap density 2.8-6.0g/cm3, the particle diameter of nano-silver powder is 0.03-0.20 μm, is shaken
Real density is 0.9-1.5g/cm3；
The nano-silver powder is prepared using rf induction plasma technology of preparing.
2. the preparation method of the low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry described in claim 1, its feature
It is, comprises the following steps：
1) glass dust is prepared：Raw material is weighed, is well mixed, melting is carried out, then takes out, water quenching, crushing, ball milling, sieving, is dried
Sieving obtains glass dust afterwards；
2) organic carrier is prepared：Resin and organic solvent are weighed, resin is dissolved in organic solvent, adds dispersant and anti-settling
Agent stirs to form organic carrier as auxiliary agent；
3) silver powder, glass dust, metal oxide powder are weighed to be added in organic carrier, is stirred, is ground, vacuum outgas, inspection
Survey and qualified produce silver paste of the present invention.
3. the preparation method of low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry according to claim 2, its
It is characterised by：Weigh raw material described in step 1), be weigh 8.0-30.0wt% bismuth oxides, 20.0-60.0wt% tellurium oxides,
It is several in 20.0-60.0wt% lead oxide, 1.0-5.0wt% lithias, 0-0.3wt% potassium oxides.
4. the preparation method of low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry according to claim 2, its
It is characterised by：It is well mixed described in step 1), melting is carried out, is then taken out, water quenching, crushing, ball milling, sieving, mistake after drying
Sieve obtains glass dust, after with three-dimensional material mixer, above-mentioned raw materials are well mixed, loaded on platinum crucible, is placed in high temperature resistance furnace
Row melting, in 900-1000 DEG C of melting 1 hour, water quenching, crushing, ball milling, sieving after taking-up, sieved after being dried in 65-75 DEG C
To glass dust, D100≤1.8 μm.
5. the preparation method of low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry according to claim 2, its
It is characterised by：Resin described in step 2), it is in ethyl cellulose, NC Nitroncellulose, ethylhydroxyethylcellulose, wood rosin
One or more, it is arbitrary proportion when mixing；Described organic solvent, it is terpineol, turpentine oil, butyl, two
One or more in butyl cellosolve, butyl carbitol acetate, dipropylene glycol monomethyl ether, Tripropylene glycol monomethyl Ether, when
It is arbitrary proportion during mixing；Described dispersant, it is surfactant Span 85；Described anti-settling agent, it is organobentonite.
6. the preparation method of low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry according to claim 2, its
It is characterised by：Step 2) weighs, and divides according to 5.0-16.0wt% resins, 80.0-90.0wt% organic solvents, 6.0-6.0wt%
Powder, 0.5-1.6wt% anti-settling agents.
7. the preparation method of low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry according to claim 2, its
It is characterised by：Resin is dissolved in organic solvent described in step 2), it is equal as auxiliary agent, stirring to add dispersant and anti-settling agent
Even formation organic carrier, it is to add organic solvent in rustless steel container to mix, then resin is added in whipping process, is warming up to
70-90 DEG C, after resin has been completely dissolved, it is cooled at 40-50 DEG C and adds surfactant and anti-settling agent, be filtrated to get transparent
The organic carrier with good print.
8. the preparation method of low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry according to claim 2, its
It is characterised by：Weigh silver powder, glass dust, metal oxide powder described in step 3) are added in organic carrier, are to weigh 82.0-
91.0wt% silver powder, 1.5-6.0wt% glass dust, 0-2.0wt% metal oxide powder, be added to 6.0-14.0wt% have it is airborne
In body.
9. the preparation method of low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry according to claim 2, its
It is characterised by：Silver powder described in step 3), include the nanometer of 68.0-87.0wt% spherical silver powder and 13.0-32.0wt%
Silver powder forms, and the particle diameter of spherical silver powder is 0.8-1.8 μm, and the particle diameter of nano-silver powder is 0.03-0.2 μm；The nano-silver powder
Prepared using rf induction plasma technology of preparing；Described metal oxide powder, it is zinc oxide, bismuth oxide, oxidation
One or more of mixing of magnesium, sodium oxide molybdena, nickel oxide, cupric oxide, cuprous oxide, zirconium dioxide, are arbitrary proportion when mixing.
10. the preparation method of low-temperature sintering type crystal silicon solar energy battery front electrode silver slurry according to claim 2, its
It is characterised by：Stirring described in step 3), grinding, vacuum outgas, is stirred with high speed dispersor, is ground using three rollers
Grinding machine grind 6-10 times, then with stir deaeration machine vacuum outgas.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110619971A (en) * | 2019-09-09 | 2019-12-27 | 江苏正能电子科技有限公司 | Formula and preparation method of high-tension front silver paste suitable for high-tellurium glass |
| CN112289481A (en) * | 2019-07-23 | 2021-01-29 | 苏州晶银新材料股份有限公司 | Solar cell front electrode slurry and preparation method and application thereof |
| CN112687420A (en) * | 2021-01-08 | 2021-04-20 | 南通天盛新能源股份有限公司 | Low-temperature sintered silver paste and preparation method thereof |
| CN113903496A (en) * | 2021-10-29 | 2022-01-07 | 江苏正能电子科技有限公司 | Busbar repair type silver paste suitable for PERC and preparation method thereof |
| CN114822909A (en) * | 2022-04-29 | 2022-07-29 | 广东南海启明光大科技有限公司 | Crystalline silicon solar cell silver-aluminum paste for low-temperature sintering, preparation method and application |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646459A (en) * | 2012-05-23 | 2012-08-22 | 湖南利德电子浆料有限公司 | Silver paste for front face of mixed silver powder crystalline silicon based solar battery and preparation method thereof |
| CN104751935A (en) * | 2013-12-26 | 2015-07-01 | 湖南利德电子浆料有限公司 | High-sheet-resistance efficient solar cell front silver paste and preparation method thereof |
| CN105913897A (en) * | 2016-06-01 | 2016-08-31 | 江苏泓源光电科技股份有限公司 | Crystalline silicon solar cell silver paste with low silver content and preparation method thereof |
| CN106816199A (en) * | 2017-01-23 | 2017-06-09 | 湖南省国银新材料有限公司 | A kind of high square resistance crystal silicon solar energy battery front electrode silver slurry and preparation method thereof |
-
2017
- 2017-11-27 CN CN201711204680.9A patent/CN107731346A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646459A (en) * | 2012-05-23 | 2012-08-22 | 湖南利德电子浆料有限公司 | Silver paste for front face of mixed silver powder crystalline silicon based solar battery and preparation method thereof |
| CN104751935A (en) * | 2013-12-26 | 2015-07-01 | 湖南利德电子浆料有限公司 | High-sheet-resistance efficient solar cell front silver paste and preparation method thereof |
| CN105913897A (en) * | 2016-06-01 | 2016-08-31 | 江苏泓源光电科技股份有限公司 | Crystalline silicon solar cell silver paste with low silver content and preparation method thereof |
| CN106816199A (en) * | 2017-01-23 | 2017-06-09 | 湖南省国银新材料有限公司 | A kind of high square resistance crystal silicon solar energy battery front electrode silver slurry and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289481A (en) * | 2019-07-23 | 2021-01-29 | 苏州晶银新材料股份有限公司 | Solar cell front electrode slurry and preparation method and application thereof |
| CN112289481B (en) * | 2019-07-23 | 2022-05-13 | 苏州晶银新材料股份有限公司 | Solar cell front electrode slurry and preparation method and application thereof |
| CN110619971A (en) * | 2019-09-09 | 2019-12-27 | 江苏正能电子科技有限公司 | Formula and preparation method of high-tension front silver paste suitable for high-tellurium glass |
| CN112687420A (en) * | 2021-01-08 | 2021-04-20 | 南通天盛新能源股份有限公司 | Low-temperature sintered silver paste and preparation method thereof |
| CN113903496A (en) * | 2021-10-29 | 2022-01-07 | 江苏正能电子科技有限公司 | Busbar repair type silver paste suitable for PERC and preparation method thereof |
| CN114822909A (en) * | 2022-04-29 | 2022-07-29 | 广东南海启明光大科技有限公司 | Crystalline silicon solar cell silver-aluminum paste for low-temperature sintering, preparation method and application |
| CN114822909B (en) * | 2022-04-29 | 2024-03-26 | 广东南海启明光大科技有限公司 | Silver-aluminum paste for low-temperature sintering crystalline silicon solar cell, preparation method and application |
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