CN107720807A - A kind of preparation method of sulfide nanocrystalline material - Google Patents

A kind of preparation method of sulfide nanocrystalline material Download PDF

Info

Publication number
CN107720807A
CN107720807A CN201710954064.9A CN201710954064A CN107720807A CN 107720807 A CN107720807 A CN 107720807A CN 201710954064 A CN201710954064 A CN 201710954064A CN 107720807 A CN107720807 A CN 107720807A
Authority
CN
China
Prior art keywords
preparation
nanocrystalline material
sulfide nanocrystalline
reaction solution
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710954064.9A
Other languages
Chinese (zh)
Other versions
CN107720807B (en
Inventor
王舜
刘爱丽
金辉乐
王继昌
董小妹
郑皓源
鲁霞
毛心楠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Material And Industrial Technology Research Institute Of Wenzhou University
Original Assignee
New Material And Industrial Technology Research Institute Of Wenzhou University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Material And Industrial Technology Research Institute Of Wenzhou University filed Critical New Material And Industrial Technology Research Institute Of Wenzhou University
Priority to CN201710954064.9A priority Critical patent/CN107720807B/en
Publication of CN107720807A publication Critical patent/CN107720807A/en
Application granted granted Critical
Publication of CN107720807B publication Critical patent/CN107720807B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00Compounds of lead
    • C01G21/21Sulfides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65Raman scattering
    • G01N21/658Raman scattering enhancement Raman, e.g. surface plasmons
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/01Crystal-structural characteristics depicted by a TEM-image
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/03Particle morphology depicted by an image obtained by SEM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/04Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/30Particle morphology extending in three dimensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Luminescent Compositions (AREA)

Abstract

The invention discloses the present invention relates to a kind of preparation method of sulfide nanocrystalline material, it is characterised in that the preparation method comprises the following steps:Lead compound, dimethylamino dithiocarbonic acid sodium are added in pure water, 30 40min of ultrasound after stirring, filter, wash, drying and to obtain lead source presoma;Lead source presoma is added in organic solvent, is sufficiently stirred and mixes, is cleaned by ultrasonic 20 30min and obtains forerunner's reaction solution;Under 100 400W ultrasonic agitation power, by forerunner's reaction solution gradient microwave heat, wherein gradient microwave be heated to be heated to 110 120 DEG C the first reaction solution, warming temperature gradient is 35 40 DEG C/min;It is heated to 130 180 DEG C of 4 6min of insulation and obtains the second reaction solution, warming temperature gradient is 2 30 DEG C/min;S4:Second reaction solution is naturally cooled into room temperature, centrifuges and washing of precipitate is obtained into sulfide nanocrystalline material.

Description

A kind of preparation method of sulfide nanocrystalline material
Invention field
The present invention relates to a kind of preparation method of nanocrystalline material, and in particular to a kind of preparation of sulfide nanocrystalline material Method, belong to nanocrystalline material field.
Background technology
Nano material is an important development direction of modern material science.It has four big effects, i.e. quantum size is imitated Answer, small-size effect, skin effect, macro quanta tunnel effect, so as to show the optics different from traditional material, electricity, magnetic , calorifics, mechanics, chemistry and diffusion and sintering characteristic.
For semiconductor nano material by the extensive concern of numerous scientists, the different sizes of material open exploration with structure New opportunities of its chemical property with physical property.Vulcanized lead (PbS) has narrow band gap (0.41eV) with larger bohr half Footpath, while paid attention to as a kind of important and typical direct band-gap semicondictor by scientific circles, vulcanize lead base micro-nano structure work( Energy material has extensive in optics, sensor, laser, solar cell, near-infrared probe, the field such as microelectronics and thermoelectricity Purposes, however, how to tie up, be grown with shaping looks surely, being assembled and self assembly vulcanization lead base micro-nano structure material, be still current material One of key challenge of field face such as material and nanometer technology.
At present, physical-chemical process research relative maturity, the method for preparing Nano lead sulfide mainly have hydro-thermal method, solvent heat Method, microwave method, sonochemical method, Electron-beam irradiation, phase transfer method, reducing process etc..
Liao et al. is with microwave method by appropriate PbAc2·3H2O is added in formaldehyde, then adds appropriate thio second Phthalein amine, mixed solution is placed in microwave return-flow system and heats 20min, be cooled to room temperature and obtain PbS nano cubics crystalline substance Body.
Liao Xuehong, Chen Yu etc. use microwave method, with Pb (NO3)2, thioacetamide (TAA) be raw material, pass through change 16 It is nanocrystalline that the dosage of alkyl trimethyl ammonium bromide (CTAB) has synthesized square PbS.
On the other hand, patent document (publication number:CN105253911A) disclose it is a kind of using sulfate reducing bacteria (SRB, Clostridiaceae sp.) method for preparing vulcanized lead nano material, and by adjusting dispersant polyethylene glycol in solution 2000 (PEG 2000) amount is prepared for the cubic system vulcanized lead nano material of three kinds of different-shapes.
But above-mentioned preparation process is complicated, needs to consider multiple key process parameters in preparation process, in practical application Still it is extremely restricted.
The content of the invention
The present invention is in view of the above-mentioned problems existing in the prior art, it is proposed that a kind of simple, quick, preparation cost-effective and environmentally friendly Method, meanwhile, Novel vulcanization lead nanocrystalline material that the preparation method obtains is regular, morphology controllable.
The above-mentioned purpose of the present invention can be realized by following technical proposal:A kind of preparation side of sulfide nanocrystalline material Method, the preparation method comprise the following steps:
S1:Lead compound, dimethylamino dithiocarbonic acid sodium are added in pure water, ultrasonic 30-40min after stirring, filter, Wash, dry to obtain lead source presoma;
S2:Lead source presoma is added in organic solvent, is sufficiently stirred and mixes, is cleaned by ultrasonic 20-30min and obtains forerunner Reaction solution;
S3:Under 100-400W ultrasonic agitation power, forerunner's reaction solution gradient microwave is heated, wherein gradient microwave adds Heat obtains the first reaction solution to be heated to 110-120 DEG C, and warming temperature gradient is 35-40 DEG C/min;It is heated to 130-180 DEG C of insulation 4-6min obtains the second reaction solution, and warming temperature gradient is 2-30 DEG C/min;
S4:Second reaction solution is naturally cooled into room temperature, centrifuges and washing of precipitate is obtained into sulfide nanocrystalline material.
The present invention by controlling different temperature to be worth to the sulfide nanocrystalline material of the different-shape, wherein, Temperature is maintained at 130-140 DEG C and obtains bar-shaped sulfide nanocrystalline material in S3 steps, and temperature is maintained at 170-180 DEG C and obtains six Flat column sulfide nanocrystalline body.But when change some technological parameters such as raw material dosage ratio, microwave power, thermostat temperature therein Deng can not then obtain the nano material that such a form can vary with temperature.
In a kind of above-mentioned preparation method of sulfide nanocrystalline material, the lead compound is lead sulfate, plumbi nitras, chlorine Change the one or more in lead, most preferably plumbi nitras.
In a kind of above-mentioned preparation method of sulfide nanocrystalline material, the lead compound and two thio first of dimethylamino The mol ratio of sour sodium is 1: 2-3, most preferably 1: 2.
In the preparation method of sulfide nanocrystalline material of the present invention, the temperature being stirred by ultrasonic in the S1 steps is 50- 60℃。
In a kind of above-mentioned preparation method of sulfide nanocrystalline material, it is aided with constant temperature when being cleaned by ultrasonic in the S2 steps Heating, temperature are 50-60 DEG C.
In a kind of above-mentioned preparation method of sulfide nanocrystalline material, the organic solvent is ethylene glycol, N, N- diformazans Any one in base formamide (DMF), dimethyl sulfoxide (DMSO) (DMSO) or N- methyl pyrrolidones (NMP), most preferably second two Alcohol.
The vulcanized lead synthesized under different temperatures causes bar-shaped vulcanized lead to have excellent table due to its structure and morphology feature Face enhancing Ramam effect (SERS), so as to applied to Raman detection, have a good application prospect.
A kind of measuring method of surface-enhanced Raman effects, the measuring method utilize sulfide nanocrystalline as described above Material.The measuring method comprises the following steps:By the sulfide nanocrystalline material at room temperature, with equal-wattage The LASER Light Source of 633nm wavelength is tested with Raman spectrometer, and by the identical time for exposure, makes laser by filter plate, Impinged upon under 100 times of object lens on sample, wherein, sample is made on a silicon substrate by being dissolved in put after ethanol.
In order to further study the Raman trait of described sulfide nanocrystalline material, in the case of taking anaerobic, with not It is synthermal to measure, to explore the temperature characterisitic of material.
Compared with prior art, the invention has the advantages that:
1st, the present invention synthesizes the sulfide nanocrystalline material of different-shape by differential responses temperature control, method is simple, Quickly, cost-effective and environmentally friendly;
2nd, the sulfide nanocrystalline material of different structure shape characteristic produced by the present invention, can be used for Raman detection, examine The fields such as survey, sensing have huge potential using value.
Brief description of the drawings
Fig. 1 is under low power ESEM, and vulcanized lead is by the bar-shaped six dendritic vulcanized lead to 180 DEG C of high temperature of 130 DEG C of low temperature Pattern change.
Fig. 2 is under transmission electron microscope picture, and six dendritic vulcanized lead are observed from high resolution transmission electron microscopy (HRTEM) The width of 0.212nm lattice fringes be present.
Fig. 3 is power spectrum (EDX) test of vulcanized lead nano material:Show containing tetra- kinds of elements of Pb, S, C, N.
Fig. 4 is X-ray diffractogram (XRD), with (Pb (DMDC)2) sulphur lead source obtained in the XRD diffraction patterns of sample, band side The diffraction maximum of piece asterisk note is Pb (DMDC)2Diffraction maximum, remaining mainly corresponds to PbS diffraction maximum.
Fig. 5 is x-ray photoelectron power spectrum (XPS), with sulphur lead source (Pb (DMDC)2) obtain sample and combine other sign sides Formula:It can be seen that Pb exists in the form of PbS in material.
Fig. 6 is PbS and Pb (DMDC)2/ PbS thermal gravimetric analysis curve
Fig. 7 is PbS and Pb (DMDC)2/ PbS infrared analysis spectrograms, it is determined that the wherein chemical bond state in lead source.
Fig. 8 is that (a is time for exposure 30s for the Raman figure of different exposure time;B is 10s) A be 5 DEG C/min bar-shaped sample Product;B is 10 DEG C/min;C is 30 DEG C/min.
Fig. 9 is the Raman shift contrast of different material:A is Au;B is sample;C is PbS QDs;D is power.
Specific implementation method
It is the specific embodiment of the present invention below, technical scheme is further described with reference to accompanying drawing, but The present invention is not limited to these embodiments.
Embodiment 1
S1:Respectively by 0.1mol plumbi nitras, 0.2mol dimethylamino dithiocarbonic acid sodium (Sodium Dimethyldithiocarbamate), 200ml is put into Beaker in, add 100ml high purity waters, stirring, then ultrasonic 30min, allows it to react completely, then filters, washing, 120 2h is dried under degree Celsius, white chunks product is obtained, is smashed in mortar, installed in vial, be placed in drying It is stand-by in case.
S2:0.05mmol presoma dimethylamino dithiocarbonic acid lead is weighed out, 50ml ethylene glycol is measured, is put into 50ml In long-neck twoport round-bottomed flask.Ultrasonic 20min in supersonic cleaning machine is placed on, while is aided with and is heated to 50 DEG C.
S3:In the case where power 200W is stirred by ultrasonic, forerunner's reaction solution that step S2 is obtained is heated to by room temperature microwave 120 DEG C, warming temperature gradient is 35-40 DEG C/min, obtains the first reaction solution;First reaction solution continuation microwave is heated to 180 DEG C and 130 DEG C (140 DEG C, 160 DEG C, 180 DEG C), and at such a temperature keep 5 minutes, obtain the second reaction solution;
S4:Second reaction solution is naturally cooled into room temperature, and centrifuged 5 minutes with 9000rpm centrifugal speed, by institute Respectively washing 3 times of priority absolute ethyl alcohol and deionized water must be precipitated, then preserves and obtains sulfide nanocrystalline material in ethanol It is named as PbS-1.
Embodiment 2-4
With being different only in that for embodiment 1, the amount of the weighing difference of lead dimethyl dithiocarbamate in embodiment 2-4 For 0.01mol, 0.03mol and 0.06mol, other are same as Example 1, and here is omitted, obtained sulfide nanocrystalline Material is respectively designated as PbS-2, PbS-3 and PbS-4.
Embodiment 5-7
With being different only in that for embodiment 1, the power being stirred by ultrasonic in embodiment 5-7 be respectively 100W, 300W and 400W, other are same as Example 1, and here is omitted, obtained sulfide nanocrystalline material be respectively designated as PbS-5, PbS-5 and PbS-7.
Embodiment 8-10
With being different only in that for embodiment 1, in the embodiment 8-10 microwave end-point temperature be respectively 150 DEG C, 170 DEG C, 190 DEG C, other are same as Example 1, and here is omitted, and obtained sulfide nanocrystalline material is respectively designated as PbS- 8th, PbS-9 and PbS-10.
Embodiment 11-13
With being different only in that for embodiment 1, in the embodiment 11-13 microwave heating thermal-insulation time be respectively 0min, 10min, 20min, other are same as Example 1, and here is omitted, and obtained sulfide nanocrystalline material is respectively designated as PbS-11, PbS-12 and PbS-13.
Embodiment 14-15
With being different only in that for embodiment 1, second of warming temperature gradient is respectively 5 DEG C/min in embodiment 14-15 With 15 DEG C/min, other are same as Example 1, and here is omitted, and obtained sulfide nanocrystalline material is respectively designated as PbS-14 and PbS-15.
Six dendritic vulcanized lead nano materials obtained by above-described embodiment have been carried out with the microscopic sdIBM-2+2q.p.approach of a variety of means of different, has been tied Fruit is as follows:
1st, discovery is characterized to PbS-5-PbS-7 SEM, PbS-5-PbS-7 form is six dendritic similar structures, but shape Looks systematicness is less than PbS-1 (180 DEG C).
2nd, PbS-8-PbS-10 SEM is characterized and found, PbS-8 and PbS-9 not yet generate six dendritic appearance structures and Bulk presoma assembly be present, PbS-10 form is dendritic for six, and PbS-9 pattern rule is poor, illustrates temperature to pattern Control station leading position.
3rd, discovery is characterized to PbS-11-PbS-13 SEM, bulk presoma assembly is present in PbS-11, shown as anti- Should not completely, PbS-12 and PbS-13 and PbS-1 patterns are basically identical, but short are preferred with the reaction time.
4th, PbS-14-PbS-15 SEM is characterized and found, bulk presoma assembly in PbS-14 be present, and pattern with Sea urchin shape has that gap, PbS-14 and PbS-15 and PbS-1 patterns are basically identical, but short is preferred with the reaction time.
Embodiment 16:
The bar-shaped sulfide nanocrystalline material of the gained of embodiment 1 is tested for Raman, specific processing method is:
Sulfide nanocrystalline self assembly macroscopic body and the vulcanized lead nano material synthesis synthesized by different heating rates are stand-by; The preparation method of vulcanized lead quantum dot comes from document report in recent years, at room temperature, by 1mmol lead chloride and 5mL oil Ammonia (OLA) is added in three neck round bottom, under vacuum state magnetic agitation oil bath be warming up to 100 degrees Celsius formation chlorinations Lead oil ammonia mixture, i.e., overall to clarify, the heat time is one hour, and nitrogen is led under 100 degrees Celsius, continues heating 5 minutes, At the same time, 0.67mmol sulphur powders are added inside another round-bottomed flask to mix with 205ml oily ammonia, and heat under vacuo To 80 degrees Celsius of 30min, taking-up is rapidly injected in vulcanization lead oil ammonia mixed system, is warming up to 210 degrees Celsius, is kept in this temperature 5min, centrifugation finally is washed with hexamethylene, is stored among hexamethylene, it is stand-by.
Embodiment 17
The clean silicon chips of 1cm*1cm are taken, sample is taken out 200 microlitres with liquid rifle, uniformly drops on silicon chip, is dried with infrared lamp It is dry, place it on Raman spectrometer, dynamic scan, 100~3000 wave numbers of scanning range, 10 seconds time for exposure, exposure time Number 3 times, laser power 5mw.
Embodiment 18
Under conditions of anaerobic argon gas, PbS/Pb (DMDC) is tested2Self assembly macroscopic body in 3K, 20K, 40K, 60K, 80K, The Raman of 100K, 150K, 300K different temperatures is corresponding.
Embodiment 19
Using 4- mercaptopyridines as probe molecule, take its solid powder to measure as a comparison, then match somebody with somebody it with water Into 10-3Mol/L solution, alternative sample is weighed into 0.002g and is put into wherein, magneton stir 24 hours it is stand-by;In order to reach pair The effect of ratio, the magneton that the vulcanized lead quantum dot prepared is equally put into progress same time under same concentration by we stir Mix, three samples are placed on silicon on-chip testing.
In summary, the preparation method of the present invention passes through specific technique it can be seen from above-mentioned all embodiments The synergistic combination and coordinative role of step and technological parameter etc., so as to obtain the bar-shaped sulfide nanocrystalline with unique morphology Material, and there is good Raman performance and SERS effects.
It should be appreciated that the purposes of these embodiments is merely to illustrate the present invention and is not intended to the protection model of the limitation present invention Enclose.In addition, it should also be understood that, after the technology contents of the present invention have been read, those skilled in the art can make each to the present invention Kind change, modification and/or variation, all these equivalent form of values equally fall within what the application appended claims were limited Within protection domain.

Claims (8)

1. a kind of preparation method of sulfide nanocrystalline material, it is characterised in that the preparation method comprises the following steps:
S1:Lead compound, dimethylamino dithiocarbonic acid sodium are added in pure water, ultrasonic 30-40min after stirring, filters, wash Wash, dry to obtain lead source presoma;
S2:Lead source presoma is added in organic solvent, is sufficiently stirred and mixes, is cleaned by ultrasonic 20-30min and obtains forerunner's reaction Liquid;
S3:Under 100-400W ultrasonic agitation power, forerunner's reaction solution gradient microwave is heated, wherein gradient microwave is heated to be It is heated to 110-120 DEG C and obtains the first reaction solution, warming temperature gradient is 35-40 DEG C/min;It is heated to 130-180 DEG C of insulation 4- 6min obtains the second reaction solution, and warming temperature gradient is 2-30 DEG C/min;
S4:Second reaction solution is naturally cooled into room temperature, centrifuges and washing of precipitate is obtained into sulfide nanocrystalline material.
2. the preparation method of a kind of sulfide nanocrystalline material according to claim 1, it is characterised in that the leaded is closed Thing is the one or more in lead sulfate, plumbi nitras, lead chloride.
3. the preparation method of a kind of sulfide nanocrystalline material according to claim 1, it is characterised in that the leaded is closed The mol ratio of thing and dimethylamino dithiocarbonic acid sodium is 1:2-3.
A kind of 4. preparation method of sulfide nanocrystalline material according to claim 1, it is characterised in that the S1 steps The temperature of middle ultrasonic agitation is 50-60 DEG C.
A kind of 5. preparation method of sulfide nanocrystalline material according to claim 1, it is characterised in that the S2 steps It is aided with heated at constant temperature during middle ultrasonic cleaning, temperature is 50-60 DEG C.
6. the preparation method of a kind of sulfide nanocrystalline material according to claim 1, it is characterised in that described organic molten Agent is appointing in ethylene glycol, N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO) (DMSO) or 1-METHYLPYRROLIDONE (NMP) Meaning is a kind of.
7. a kind of measuring method of surface-enhanced Raman effects, it is characterised in that the measuring method is utilized such as claim 1 institute State the sulfide nanocrystalline material of method preparation.
A kind of 8. measuring method of surface-enhanced Raman effects according to claim 7, it is characterised in that the measurement side Method comprises the following steps:Sulfide nanocrystalline material prepared by method as claimed in claim 1 is placed at room temperature, with identical work( The LASER Light Source of the 633nm wavelength of rate is tested with Raman spectrometer, and by the identical time for exposure, laser is passed through filtering Piece, impinged upon under 100 times of object lens on sample, wherein, sample is made on a silicon substrate by being dissolved in put after ethanol.
CN201710954064.9A 2017-10-13 2017-10-13 A kind of preparation method of sulfide nanocrystalline material Active CN107720807B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710954064.9A CN107720807B (en) 2017-10-13 2017-10-13 A kind of preparation method of sulfide nanocrystalline material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710954064.9A CN107720807B (en) 2017-10-13 2017-10-13 A kind of preparation method of sulfide nanocrystalline material

Publications (2)

Publication Number Publication Date
CN107720807A true CN107720807A (en) 2018-02-23
CN107720807B CN107720807B (en) 2019-11-15

Family

ID=61211270

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710954064.9A Active CN107720807B (en) 2017-10-13 2017-10-13 A kind of preparation method of sulfide nanocrystalline material

Country Status (1)

Country Link
CN (1) CN107720807B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109467061A (en) * 2018-10-23 2019-03-15 温州大学新材料与产业技术研究院 A kind of PbS-Te nano particle of carried noble metal and preparation method thereof
CN112678864A (en) * 2020-12-25 2021-04-20 电子科技大学 Preparation method of lead sulfide sol
WO2024171842A1 (en) * 2023-02-16 2024-08-22 富士フイルム株式会社 PbS QUANTUM DOT LIQUID DISPERSION, METHOD FOR PRODUCING SEMICONDUCTOR FILM, METHOD FOR PRODUCING LIGHT DETECTION ELEMENT, METHOD FOR PRODUCING IMAGE SENSOR, AND METHOD FOR PRODUCING PbS QUANTUM DOT LIQUID DISPERSION

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1865936A (en) * 2006-05-10 2006-11-22 吉林大学 SERS detection method employing nano semiconductor material as substrate
CN102390856A (en) * 2011-11-14 2012-03-28 西北工业大学 Method for preparing high-stability gamma-phase nanometer lanthanum sulfide powder in low temperature

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1865936A (en) * 2006-05-10 2006-11-22 吉林大学 SERS detection method employing nano semiconductor material as substrate
CN102390856A (en) * 2011-11-14 2012-03-28 西北工业大学 Method for preparing high-stability gamma-phase nanometer lanthanum sulfide powder in low temperature

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
乔涛: "纳米材料的水热溶剂热法合成与表征", 《中国优秀硕士学位论文全文数据库》 *
周培等: "PbS纳米晶制备中不同溶剂对其微观形貌的影响", 《西南石油大学学报》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109467061A (en) * 2018-10-23 2019-03-15 温州大学新材料与产业技术研究院 A kind of PbS-Te nano particle of carried noble metal and preparation method thereof
CN112678864A (en) * 2020-12-25 2021-04-20 电子科技大学 Preparation method of lead sulfide sol
WO2024171842A1 (en) * 2023-02-16 2024-08-22 富士フイルム株式会社 PbS QUANTUM DOT LIQUID DISPERSION, METHOD FOR PRODUCING SEMICONDUCTOR FILM, METHOD FOR PRODUCING LIGHT DETECTION ELEMENT, METHOD FOR PRODUCING IMAGE SENSOR, AND METHOD FOR PRODUCING PbS QUANTUM DOT LIQUID DISPERSION

Also Published As

Publication number Publication date
CN107720807B (en) 2019-11-15

Similar Documents

Publication Publication Date Title
Li et al. Controllable synthesis, optical and photocatalytic properties of CuS nanomaterials with hierarchical structures
Ge et al. Orthogonal PbS nanowire arrays and networks and their Raman scattering behavior
Zhuang et al. Controlled hydrothermal synthesis and structural characterization of a nickel selenide series
Yang et al. Preparation and characterization of Co-doped ZnO nanomaterials
Wang et al. General synthesis of I–III–VI 2 ternary semiconductor nanocrystals
Yu et al. Scalable colloidal synthesis of uniform Bi 2 S 3 nanorods as sensitive materials for visible-light photodetectors
CN107720807B (en) A kind of preparation method of sulfide nanocrystalline material
Jing et al. Photocatalytic and antibacterial activities of CdS nanoparticles prepared by solvothermal method
CN102786098B (en) Preparation method of pyrite-type ferrous disulfide micron/nano crystalline material with controllable morphology
Shyju et al. Studies on lead sulfide (PbS) semiconducting thin films deposited from nanoparticles and its NLO application
CN101058437B (en) Liquid state preparation method for nano cadmium sulfide hollow sphere
He et al. In situ synthesis of CdS/PVK nanocomposites and their optical properties
CN102849687B (en) Method for synthesizing nano flower-shaped spherical In2Se3 diethylenetriamine (DETA) hybrid material by means of solvothermal
CN105016313A (en) Gourd string structure cadmium sulfide-tellurium heterojunction photoelectrolysis composite material, preparation method and use
Foe et al. Controlled synthesis of ZnO spheres using structure directing agents
Onwudiwe et al. Effect of some nitrogen donor ligands on the optical and structural properties of CdS nanoparticles
Fan et al. Hydrothermal growth of NiSe2 tubular microcrystals assisted by PVA
Zhao et al. Preparation of dentritic PbS nanostructures by ultrasonic method
Maleki et al. Preparation and characterization of cadmium sulfide nanorods by novel solvothermal method
Jiang et al. Shape-controlled synthesis and properties of manganese sulfide microcrystals via a biomolecule-assisted hydrothermal process
Nowak et al. Sonochemical preparation of SbSeI gel
Wang et al. Growth of ZnO nanoparticles from nanowhisker precursor with a simple solvothermal route
Zhang et al. Amino-ended hyperbranched polyamide as template for tuning the morphology of self-assembled ZnS particles
CN102145915B (en) Method for synthetizing ZnS/CdS nano rod by controlling oxygen content in thermal process of solvent
Zheng et al. Convenient route to well-dispersed Cu2O nanospheres and their use as photocatalysts

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant