CN107704195A - Data storage device, memory controller and data management method thereof - Google Patents
Data storage device, memory controller and data management method thereof Download PDFInfo
- Publication number
- CN107704195A CN107704195A CN201710035085.0A CN201710035085A CN107704195A CN 107704195 A CN107704195 A CN 107704195A CN 201710035085 A CN201710035085 A CN 201710035085A CN 107704195 A CN107704195 A CN 107704195A
- Authority
- CN
- China
- Prior art keywords
- data
- storage device
- page
- temporary storage
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000013500 data storage Methods 0.000 title claims abstract description 23
- 238000013523 data management Methods 0.000 title abstract description 6
- 238000004891 communication Methods 0.000 claims description 34
- 241001269238 Data Species 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000001052 transient effect Effects 0.000 claims description 6
- 238000005138 cryopreservation Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- CXOXHMZGEKVPMT-UHFFFAOYSA-N clobazam Chemical compound O=C1CC(=O)N(C)C2=CC=C(Cl)C=C2N1C1=CC=CC=C1 CXOXHMZGEKVPMT-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229940044442 onfi Drugs 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/062—Securing storage systems
- G06F3/0622—Securing storage systems in relation to access
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0658—Controller construction arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
The invention provides a data management method of a data storage device, wherein the data storage device comprises a nonvolatile memory, the nonvolatile memory comprises a plurality of data pages, and each data page is used for storing a plurality of data, and the method comprises the following steps: receiving a reading instruction; when the target data of the reading instruction is stored in the temporary data storage device, reading the target data from the temporary data storage device; judging whether the data quantity of the residual data of the temporary data storage device is larger than a threshold value or not, wherein the residual data are partial subsequent data and the target data and the residual data have a front-back relationship in data reading; and storing the data of at least one subsequent data page of the target data to the temporary data storage device if the judgment result is negative.
Description
Technical field
It is especially a kind of to reduce nonvolatile memory reading times and increase the present invention relates to a kind of data managing method
The data managing method of data reading performance using redundancy, and Memory Controller and data memory device corresponding to it.
Background technology
Nonvolatile memory is a kind of electronic type memory storage, and it, which has, is not required to additional power maintenance information, quick number
According to abilities such as reading and antidetonations, therefore it is widely used in memory card, solid state hard disc and portable multimedia device etc..
When the data being stored in nonvolatile memory are repeated as many times as required reading, nonvolatile memory is disturbed it is possible that reading
The situation of dynamic (Read Disturbance), and then it is incorrect to cause to store data, therefore nonvolatile memory is at this moment
It must be refreshed (Refresh), but nonvolatile memory carries out refreshing and will influence whether its service life.
Data memory device using nonvolatile memory as data storage medium has the limitation of system effectiveness, and this is limited
System is the design of hardware and software for the physical characteristic and data storage medium for being limited to nonvolatile memory.How data storage is adjusted
The design of hardware and software of media and break through this limitation to provide preferable system effectiveness, this is the mesh of the manufacturer of data storage medium
Mark.
The content of the invention
In order to solve above-mentioned shortcoming, the present invention proposes a kind of data managing method, data memory device and memory control
Device processed, to promote the efficiency that data memory device reads data.
The present invention proposes a kind of data managing method for data memory device.Data memory device includes non-volatile
Memory, nonvolatile memory include multiple data pages, and each data page is used to store more pen datas.Data managing method walks
Suddenly include：Receive and read instruction；When read instruction target data be stored in data temporary storage device, then temporarily stored up from data
Cryopreservation device reads target data；Judge whether the data volume of the remaining data of data temporary storage device is more than threshold value, wherein, remain
Remainder has front and rear relation with remaining data according to the follow-up data for part and target data on digital independent；And when judgement
It is no, by the data storage of an at least follow-up data page for target data to data temporary storage device.
The present invention more proposes another data managing method for being used for data memory device.Data memory device includes non-easy
The property lost memory, nonvolatile memory include multiple data pages, and each data page is used to store more pen datas.Data management side
Method step includes：Receive and read instruction；Target data is read by data temporary storage device according to instruction is read；Judge that data are temporary
When storage device the data volume of remaining data whether be more than threshold value, wherein, remaining data is the follow-up data and target of part
Data have front and rear relation with remaining data on digital independent；When being judged as NO, at least one follow-up number of target data is noted down
According to the data of page to data temporary storage device.
The present invention more proposes a kind of data memory device for data managing method.Data memory device includes non-volatile
Property memory, data temporary storage device and Memory Controller.Nonvolatile memory includes multiple data pages, each number
It is used to store more pen datas according to page, data temporary storage device is used to store more pen datas.Memory Controller with it is non-easily
The property lost memory and data temporary storage device electric property coupling.Memory Controller, which is used to receive, reads instruction, and according to reading
Instruction fetch reads target data by data temporary storage device.Memory Controller and the residue for judging data temporary storage device
Whether the data volume of data is more than threshold value, wherein, remaining data exists for the follow-up data and target data of part with remaining data
There is front and rear relation on digital independent, when being judged as NO, Memory Controller is by an at least follow-up data page for target data
Data storage is to data temporary storage device.
The present invention more proposes a kind of Memory Controller for data managing method.It is logical that Memory Controller includes first
Communication interface, the second communication interface, the 3rd communication interface and microprocessor.First communication interface is used for and nonvolatile memory
Communicate to access nonvolatile memory.Second communication interface is used for temporary transient to access data with the communication of data temporary storage device
Storage device.3rd communication interface is used to instruct to receive the reading from main frame with host communication.Microprocessor and first leads to
Communication interface, the second communication interface and the 3rd communication interface electric property coupling.Microprocessor is used for temporary by data according to instruction is read
When storage device read target data.Microprocessor judges whether the data volume of the remaining data of data temporary storage device is more than
Threshold value, wherein, remaining data has front and rear pass with remaining data for the follow-up data and target data of part on digital independent
System, when microprocessor is judged as NO, the data of an at least follow-up data page for microprocessor records target data are temporary transient to data
Storage device.
Comprehensive described above, the present invention is because can read follow-up data page to number in advance before current data page is read and finished
According to temporary storage device, data temporary storage device is set to store more than the data of data volume of a data page, therefore work as and connect
When receiving the reading instruction for reading follow-up data, data memory device not only quickly can read institute from data temporary storage device
The data needed, the number that nonvolatile memory is read is reduced, order persistence transmission is read when more and reading instruction institute is right
When the data answered not yet are stored to data temporary storage device, data memory device more can be quickly by nonvolatile memory
Data corresponding to reading simultaneously store to data temporary storage device, and without waiting for because more read instruction caused by delay when
Between, effectively promote the benefit that data memory device reads data.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of specification, and in order to allow the above and other objects, features and advantages of the present invention can
Become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, describe in detail as follows.
Brief description of the drawings
Fig. 1 is the data memory device schematic diagram according to one embodiment of the invention.
Fig. 2 is the data managing method flow chart according to one embodiment of the invention.
Fig. 3 is the data page schematic diagram according to one embodiment of the invention.
Fig. 4 A are known data management schematic diagram.
Fig. 4 B are the data management schematic diagram according to one embodiment of the invention.
Embodiment
Fig. 1 is refer to, Fig. 1 is data memory device embodiment schematic diagram.Data memory device 10 is used for and external host
20 communications, and the data for being stored in data memory device 10 are read in the reading instruction according to transmitted by main frame 20, the data can
To be for the image data of display or for voice data etc..Main frame 20 can be the electricity such as desktop computer or tablet PC
Sub-device.Data memory device 10 includes Memory Controller（Memory controller) 11, nonvolatile memory
（Non-volatile memory) 12 and data temporary storage device 13, nonvolatile memory 12 is, for example, flash memory
(flash memory), magnetic random access memory (magnetoresistive RAM), phase transition storage（phase-
change memory）Or ferroelectric RAM (ferroelectric RAM) etc. has the number that long-time data preserve
According to store media.Data temporary storage device 13 is, for example, dynamic random access memory (dynamic random access
memory, DRAM).Memory Controller 11 and main frame 20, nonvolatile memory 12 and the electricity of data temporary storage device 13
Property coupling.
Memory Controller 11 include the first communication interface 111, the second communication interface 112, the 3rd communication interface 113 with
And microprocessor 114.The communication interface 111 of microprocessor 114 and first, the second communication interface 112 and the 3rd communication interface 113
Electric property coupling.Memory Controller 11 can be communicated with nonvolatile memory 12 by the first communication interface 111 and accessed non-easy
The property lost memory 12.Memory Controller 11 can communicate and deposit with data temporary storage device 13 by the second communication interface 112
Access is according to temporary storage device 13.Memory Controller 11 can communicate by the 3rd communication interface 113 with main frame 20.Wherein, it is non-
Volatile memory 12 includes multiple data blocks (block), and each data block includes multiple data pages (page), each number
It is used to store the data according to page.Therefore, the number that Memory Controller 11 can be according to needed for reading instruction reading main frame 20 in proper order
According to.
In addition, the first communication interface 111 is, for example, open nand flash memory interface（open NAND flash
Interface, ONFI) or Toggle.Second communication interface 112 is, for example, DFI interfaces (DDR PHY interface).3rd
Communication interface 113 is, for example, SATA（serial advanced technology attachment）Interface, USB
(universal serial bus, USB), peripheral component interconnect（peripheral component
Interconnect express, PCI-E）, list type minicomputer system（Serial Attached SCSI, SAS）Connect
Mouth, Common Flash Memory storage device（Universal flash storage, UFS), multimedia memory card（embeded
Multimedia card, eMMC）And SDIO（secure digital input/output）Interface.
In order to provide the system effectiveness of preferable data memory device 10 and reduce what nonvolatile memory 12 was read
Number, the invention discloses a kind of data managing method, and the data that may be read in nonvolatile memory 12 are stored up in advance
Deposit to data temporary storage device 13, consequently, it is possible to data memory device 10 can quickly respond the reading instruction of main frame 20,
Lift the system effectiveness of data memory device 10.Illustrate the data management side of the present invention below in conjunction with Fig. 1, Fig. 2 and Fig. 3
Method embodiment.For the purpose of simplifying the description, nonvolatile memory 12 includes plurality of data page, including data page P1 to data page P8
And other data pages（Omit）.Each data page includes 3 sections (sector), and section is the least unit of data storage,
And addressing data（addressing）Foundation.The size of each section is corresponding to a logical data block address
The size of (logical block address, LBA), every LBA size are preferably 512 bytes（byte）.However, use
Person can set the size of each data page according to its actual demand, such as：4096 bytes or 8192 bytes；Or each number of setting
The number of the section included according to page, such as 8 sections or 32 sections；Or the every LBA of setting size, such as：1024 words
Section or 4096 bytes, it is all feasible for technical, therefore is not limited.
Nonvolatile memory 12 stores four archives, and each archives is given a specific archives identifier
（file ID）.Because each archives has a specific archives identifier, microprocessor 114 is according to this archives identifier
Record the initial address of all data pages of specific archives；Or the initial address of first data page of specific archives is stored,
The initial address of follow-up data page is learnt by the content of first data page again, the symbol terminated until finding archives.Typically
For, archives are usually discontinuous storage, however, manufacturer in advance can be stored sequentially and continuously each archives to data
Temporary storage device 13, in the case, all data pages of each archives are adjacent and sequentially stored.Due to initial address
, it is known that the absolute address of each data can be learnt in the relative address of each data page according to each data.
As shown in figure 3, archives a is stored in data page P1, P2 and P3.Data page P1, P2 and P3 are adjacent data
The follow-up data page that page and data page P2 and P3 are data page P1.Data page P1 includes 3 pen datas, i.e., data a11, a12 with
And a13；Data page P2 includes 3 pen datas, i.e. data a21, a22 and a23；Data page P3 includes 3 pen datas, i.e. data a31,
A32 and a33.Archives b is stored in data page P4 and P5.Data page P4 and P5 are adjacent data page and data page P5 is
Data page P4 follow-up data page.Data page P4 includes 3 pen datas, i.e. data b11, b12 and b13；Data page P5 includes 3
Data, i.e. data b21, b22 and b23.Archives c is stored in data page P6 and P7.Data page P6 and P7 are adjacent number
The follow-up data page for being data page P6 according to page and data page P7.Data page P6 includes 3 pen datas, i.e., data c11, c12 and
c13；Data page P7 includes 3 pen datas, i.e. data c21, c22 and c23.Archives d is stored in data page P8.Data page P8 is included
3 pen datas, i.e. data d11, d12 and d13.
First, step S201, receive and read instruction.When stored by Fig. 1 main frame 20 data memory device 10 to be read
During target data, such as archives a data a11, main frame 20 can send above-mentioned reading and instruct to data memory device 10, data
The microprocessor 114 of storage device 10 passes through the 3rd communication interface 113 and receives the reading instruction that main frame 20 is transmitted.
Step S203, judge to read whether the corresponding target data of instruction is stored in data temporary storage device 13.
After microprocessor 114 receives reading instruction, according to reading included address information can be instructed to obtain the storage of target data
Address, and judge whether target data is stored in data temporary storage device 13 according to storage address.If it is perform
Step S209；If otherwise perform step S205.Wherein, data temporary storage device 13 is preferably dynamic random access memory
(dynamic random access memory, DRAM), also can be static RAM (static random
Access memory, SRAM) etc. average reading speed be better than the data buffer or data buffering of nonvolatile memory 12
Device.Assuming that archives a data a11 is only stored in nonvolatile memory 12, data temporary storage device 13 is not stored in, because
This, performs step S205.
Step S205, read the data page comprising target data and return target data.Microprocessor 114 is according to storage place
Location to nonvolatile memory 12 reads the data page for including target data, i.e. data page P1, to obtain target data, i.e. data
A11, and target data is returned to main frame 20 by the 3rd communication interface 113.
In another embodiment, step S205 is changed to read the data page and follow-up data page for including target data,
And return target data.It can be a data page to continue data page in this embodiment the rear, i.e. data page P2；Follow-up data page
Can also be two data pages, i.e. data page P2 and P3, the number of follow-up data page can adjust according to the demand of user,
It is not limited thereto.Assuming that during the consecutive numbers pen data to be read of main frame 20, because follow-up data page has been read and is stored to temporary
When storage device 13, when main frame 20 is intended to read more pen datas comprising target data, microprocessor 114 is in subsequent steps
Main frame 20 can promptly be provided data to.
Step S207, follow-up data is stored to data temporary storage device 13, wherein, target data is all stored up with follow-up data
It is stored in same data page.Microprocessor 114 is obtained outside target data from data page P1, can also obtain the follow-up number of target data
According to, including data a12 and data a13, and follow-up data is stored into data temporary storage device 13.In addition, step
S207 can more store target data to data temporary storage device 13, not store target data to data temporary storage device 13
Advantage is can to save the space usage amount of data temporary storage device 13；Opposite, storage target data is temporarily stored up to data
The advantages of cryopreservation device 13 is when target data is read repeatedly, and microprocessor 114 can be directly from data temporary storage device
13 passback target datas increase the efficiency of digital independent to main frame 20.
Step S209, return target data.When step S203 is judged as YES, that is, target data is that storage is temporary to data
When storage device 13, microprocessor 114 can according to storage address to data temporary storage device 13 read target data, such as count
According to a12, and by the target data of reading main frame 20 is sent to by the 3rd communication interface 113.This embodiment is except that can reduce
Microprocessor 114 performs step S205 number, can also increase the efficiency of digital independent.
Whether step S211, the data volume for the remaining data for judging to be stored in data temporary storage device 13 are more than threshold value
(threshold), wherein, before remaining data has for the follow-up data and target data and remaining data of part on digital independent
Relation afterwards, and follow-up data subtracts target data and is equal to remaining data.Assuming that threshold value is a section, target data is data
A11, when step S207 is performed, data a11 is transferred into main frame 20, and it is temporary transient that data a12 and data a13 are stored to data
Storage device 13.When step S209 is performed, target data has been updated to data a12 and target data is transferred into main frame 20,
Therefore, the remaining data only data left a13 of data temporary storage device 13 is stored in, it is only a sector sizes and little
In threshold value, therefore, step S211 judged result is no, therefore performs step S213.Opposite, if step S211 judgement knot
Fruit is yes, then returns to step S201 and wait next read to instruct.In another embodiment, threshold value can be the size of data volume,
Such as 1024 byte or other numerical value, the integral multiple of preferably one sector sizes.In addition, the data volume of remaining data also can be by
The difference of address represents, for example, the value that the maximum address value of remaining data subtracts lowest address value is the difference of address,
In this case, threshold value is preferably the number for being less than the section that data page is included, such as integer 2, but it is not limited.
Step S213, by the data storage of follow-up data page in data temporary storage device 13.Microprocessor 114 is according to shelves
Pattern identification accords with and obtains the address of current data page and follow-up data page, and the address according to follow-up data page can be from non-volatile
Property memory 12 read follow-up data page；Or microprocessor 114 can directly read the follow-up data page of current data page,
Such as data page P2, and by the data of follow-up data page, including data a21, a22 and a23, be stored in data and temporarily store dress
Put 13.After data a21, a22 and a23 are stored to data temporary storage device 13, plus the data just stored originally
A13, the data volume of remaining data are changed to 4 sections and are more than threshold value.Finally, returning to step S201 waits next reading to refer to
Order.In another embodiment, step S213 is changed to the data storage by follow-up multiple data pages in data temporary storage device
13, for example, data page P2 and P3.Assuming that during the consecutive numbers pen data to be read of main frame 20, read in step S213 follow-up more
Individual data page and by the data storage of follow-up multiple data pages to temporary storage device 13, except microprocessor 114 can be reduced
Step S213 number is performed, can also increase the efficiency of digital independent.
Then the data managing method embodiment of the present invention is illustrated again with Fig. 4 A and Fig. 4 B.Then it please refer to figure
4A, Fig. 4 A are known data managing method embodiment schematic diagram, and transverse axis is time Time in figure, more shown in Fig. 4 A first halves
Individual data are that main machine 20 is instructed to the target data required by Memory Controller 11 by reading, and shown in Fig. 4 A lower half is
Memory Controller 11 is stored to multiple data pages of data temporary storage device 13 according to instruction is read.When main frame 20 is in the time
T1 sends first and reads instruction, and during to read archives a data a11 reading instruction, is controlled in step S205 memories
Device 11 reads data page P1 from nonvolatile memory 12 and stored data a12 and a13 in step S207 temporary transient to data
In storage device 13.Then in time T2, main frame 20 have issued the reading instruction for the data b11 for reading archives b, now memory
Controller 11 still can not handle this and read instruction in progress data page P1 processing.Until time T3, stored in step S205
Device controller 11 reads data page P4 from nonvolatile memory 12 and is stored in data b12 and b13 during in step S207
In data temporary storage device 13.In time T3, main frame 20 have issued the reading instruction for the data c11 for reading archives c, now
Memory Controller 11 still can not handle this and read instruction in progress data page P4 processing.Until time T32, in step
S205 Memory Controllers 11 from nonvolatile memory 12 read data page P6 and during in step S207 by data c12 and
C13 is stored in data temporary storage device 13.
In time T6, main frame 20 have issued archives a data a21 reading instruction, in step S205 Memory Controllers
11 read data page P2 from nonvolatile memory 12 and store data a22 and data a23 in step S207 temporary to data
When storage device 13 in.And, it is evident that Memory Controller 11 instructs it in the reading for receiving data a21 from Fig. 4 A
Before, i.e. time T5 is between T6, due in all existing data temporary storage device 13 of the target data required by main frame 20, therefore
Memory Controller 11 will not access nonvolatile memory 12, be also known as waiting time Ts this periods.It is main when time T7
Machine 20 have issued archives d data d11 reading instruction, and now Memory Controller 11 is still carrying out data page P5 processing,
And data page P7 processing is then carried out, therefore this can not be handled and read instruction.Until time T8, in step S205 memory controls
Device 11 processed reads data page P8 from nonvolatile memory 12 and is stored in data d12 and data d13 during in step S207
In data temporary storage device 13.Time T7 is between T8, because Memory Controller 11 is still carrying out data page P5 and P7
Handle and data page P8 can not be read, be also known as time delay Td this periods.
Next referring to Fig. 4 B, Fig. 4 B are the data managing method embodiment of the present invention.Transverse axis is time Time in figure, figure
Multiple data shown in the 4B first halves are main frame 20 by reading instruction to the data required by Memory Controller 11, under Fig. 4 B
Being stored for Memory Controller 11 according to instruction is read to the data page of data temporary storage device 13 shown in half portion, wherein,
The time point for the time T1 in identical time point, such as Fig. 4 A that Fig. 4 A and identical time component symbol in Fig. 4 B refer to is with Fig. 4 B's
Time, T1 was identical, by that analogy other identical time component symbols.Duplicated first with Fig. 4 A, Memory Controller 11 is according to master
The reading instruction of machine 20, sequentially read data page P1, P4 and P6 and store up data a12, a13, b12, b13, c12 and c13
Deposit to data temporary storage device 13.When main frame 20 have issued in time T31 archives a data a12 reading instruction, Yu Bu
Rapid 209 updating target data is data a12 and to be transferred into main frame 20, therefore, remaining data only data left a13 and cause step
Rapid S211 judged result be no, thus perform step S213 from the reading data page P2 of nonvolatile memory 12 and by data a21,
A22 and a23 is stored in data temporary storage device 13.Running similar to time T31, difference occur for time T32 and T33
It is data page P5 and P7 to be only that the data page being read.Due to performing step S213 reason, waiting time Ts is not deposited again
, the substitute is and read in advance and store follow-up data page, i.e. data page P2, P5 and P7, data it is temporary transient to data
Storage device 13.It is in advance waiting time Ts elimination or reduction the advantages of reading, thus makes time delay Td elimination or contracting
Subtract.As shown in Figure 4 B, when time T7, main frame 20 have issued archives d data d11 reading instruction, and now memory controls
Device 11 can quickly respond the reading instruction of main frame 20.In step S205 Memory Controllers 11 from nonvolatile memory 12
Read data page P8 and data d12 and data d13 are stored in data temporary storage device 13 when step S207, because
This, time delay, Td was eliminated.
In summary, because the data managing method of the present invention can determine whether to be currently stored in data temporary storage device 13
Whether data volume is read soon finishes（Or more than threshold value）, if it is, reading follow-up data page in advance and by follow-up data page
Data storage into data temporary storage device 13, therefore when main frame 20 have sent reading instruction when, Memory Controller 11
Quickly transfer destination data or target data can be read from nonvolatile memory 12, caused by reducing time delay Td
Influence, not only reduce the reading times of nonvolatile memory, it is more effective to reduce what Memory Controller 11 left unused and waited
Time, significantly improve the efficiency of digital independent.
Although the present invention is disclosed above with foregoing embodiment, so it is not intended to limit the present invention, any to be familiar with this skill
Skill person, without departing from the spirit and scope of the present invention, when can make a little change and retouching, therefore the patent protection of the present invention
Scope must be defined depending on the claim institute defender appended by this specification.
Claims (24)
1. a kind of data managing method for data memory device, the data memory device includes nonvolatile memory,
The nonvolatile memory includes multiple data pages, and each the multiple data page is used to store more pen datas, and its feature exists
In the data managing method includes step：
Receive and read instruction；
When it is described read instruction target data be stored in data temporary storage device, then from the data temporary storage device read
Take the target data；
Judge whether the data volume of the remaining data of the data temporary storage device is more than threshold value, wherein, the remaining data
Follow-up data and the target data for part have front and rear relation with the remaining data on digital independent；And
When being judged as NO, data storage to the data of an at least follow-up data page for the target data are temporarily stored into dress
Put.
2. data managing method as claimed in claim 1, it is characterised in that also including step：
If it is described read instruction the target data be not stored in the data temporary storage device, from it is described it is non-easily
The property lost memory reads at least one the multiple data page for including the target data；And
The follow-up data of at least one the multiple data page is stored to the data temporary storage device.
3. data managing method as claimed in claim 1, it is characterised in that also including step：
If it is described read instruction the target data be not stored in the data temporary storage device, from it is described it is non-easily
The property lost memory reads at least one the multiple data page for including the target data；And
The target data of at least one the multiple data page and the follow-up data are stored to the data and temporarily stored up
Cryopreservation device.
4. data managing method as claimed in claim 1, it is characterised in that the threshold value is less than the capacity of the data page.
5. data managing method as claimed in claim 1, it is characterised in that the data volume is the maximum of the remaining data
Address value and the difference of lowest address value.
6. data managing method as claimed in claim 1, it is characterised in that the follow-up data subtracts described target data etc.
In the remaining data.
7. a kind of data managing method for data memory device, the data memory device includes nonvolatile memory,
The nonvolatile memory includes multiple data pages, and each the multiple data page is used to store more pen datas, and its feature exists
In the data managing method includes step：
Receive and read instruction；
Instruction is read by data temporary storage device reading target data according to described；
Judge whether the data volume of the remaining data of the data temporary storage device is more than threshold value, wherein, the remaining data
Follow-up data and the target data for part have front and rear relation with the remaining data on digital independent；And
When being judged as NO, data to the data for noting down an at least follow-up data page for the target data temporarily store dress
Put.
8. data managing method as claimed in claim 7, it is characterised in that also including step：
It is the multiple by nonvolatile memory reading at least one comprising the target data according to the reading instruction
Data page；And
The follow-up data of at least one the multiple data page is noted down to the data temporary storage device.
9. data managing method as claimed in claim 7, it is characterised in that also including step：
It is the multiple by nonvolatile memory reading at least one comprising the target data according to the reading instruction
Data page；And
The target data and the follow-up data to the data for noting down at least one the multiple data page temporarily store
Device.
10. data managing method as claimed in claim 7, it is characterised in that the threshold value is less than the capacity of the data page.
11. data managing method as claimed in claim 7, it is characterised in that the data volume be the remaining data most
Big address value and the difference of lowest address value.
12. data managing method as claimed in claim 7, it is characterised in that the follow-up data subtracts the target data
Equal to the remaining data.
A kind of 13. data memory device for data managing method, it is characterised in that including：
Nonvolatile memory, including multiple data pages, each the multiple data page are used to store more pen datas；
Data temporary storage device, for storing the multiple data；And
Memory Controller, it is described to deposit with the nonvolatile memory and the data temporary storage device electric property coupling
Memory controller is to be used to receive to read instruction, and reads target by the data temporary storage device according to the reading instruction
Data, the Memory Controller simultaneously judge whether the data volume of the remaining data of the data temporary storage device is more than threshold
Value, wherein, the remaining data is the follow-up data of part and the target data and the remaining data on digital independent
There is front and rear relation, when being judged as NO, the Memory Controller is by the number of an at least follow-up data page for the target data
According to storage to the data temporary storage device.
14. data memory device as claimed in claim 13, it is characterised in that the Memory Controller is according to the reading
Instruction is read by the nonvolatile memory and includes at least one the multiple data page of the target data, and will at least one
The follow-up data of the multiple data page is stored to the data temporary storage device.
15. data memory device as claimed in claim 13, it is characterised in that the Memory Controller is according to the reading
Instruction is read by the nonvolatile memory and includes at least one the multiple data page of the target data, and will at least one
The target data of the multiple data page and the follow-up data are stored to the data temporary storage device.
16. data memory device as claimed in claim 13, it is characterised in that the threshold value is less than the appearance of the data page
Amount.
17. data memory device as claimed in claim 13, it is characterised in that the data volume be the remaining data most
Big address value and the difference of lowest address value.
18. data memory device as claimed in claim 13, it is characterised in that the follow-up data subtracts the target data
Equal to the remaining data.
A kind of 19. Memory Controller for data managing method, it is characterised in that including：
First communication interface, for being communicated with nonvolatile memory to access the nonvolatile memory；
Second communication interface, for being communicated with data temporary storage device to access the data temporary storage device；
3rd communication interface, for being instructed with host communication with receiving the reading from the main frame；And
Microprocessor, and first communication interface, second communication interface and the 3rd communication interface electric property coupling,
The microprocessor is to be used to read instruction by data temporary storage device reading target data, micro- place according to described
Reason device judges whether the data volume of the remaining data of the data temporary storage device is more than threshold value, wherein, the remaining data
Follow-up data and the target data for part have front and rear relation with remaining data on digital independent, when the microprocessor
Device is judged as NO, and the data of an at least follow-up data page for target data described in the microprocessor records are temporary transient to the data
Storage device.
20. Memory Controller as claimed in claim 19, it is characterised in that the microprocessor is used for according to the reading
Instruction is read at least one the multiple data page comprising the target data by the nonvolatile memory and noted down at least
The follow-up data of one the multiple data page is to the data temporary storage device.
21. Memory Controller as claimed in claim 19, it is characterised in that the microprocessor instructs according to described read
At least one the multiple data page comprising the target data is read by the nonvolatile memory and notes down at least one institute
State multiple data pages the target data and the follow-up data to the data temporary storage device.
22. Memory Controller as claimed in claim 19, it is characterised in that the threshold value is less than the appearance of the data page
Amount.
23. Memory Controller as claimed in claim 19, it is characterised in that the data volume be the remaining data most
Big address value and the difference of lowest address value.
24. Memory Controller as claimed in claim 19, it is characterised in that the follow-up data subtracts the target data
Equal to the remaining data.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TWTW105125097 | 2016-08-08 | ||
| TW105125097A TWI604306B (en) | 2016-08-08 | 2016-08-08 | Data management method for data storage device and memory controller |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107704195A true CN107704195A (en) | 2018-02-16 |
Family
ID=61023082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710035085.0A Pending CN107704195A (en) | 2016-08-08 | 2017-01-17 | Data storage device, memory controller and data management method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107704195A (en) |
| TW (1) | TWI604306B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111464419A (en) * | 2020-04-13 | 2020-07-28 | 中国人民解放军国防科技大学 | Data transmission control method based on bus network communication |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200951969A (en) * | 2008-06-06 | 2009-12-16 | Phison Electronics Corp | Memory management method for non-volatile memory and controller using the same |
| JP2010016719A (en) * | 2008-07-04 | 2010-01-21 | Sanyo Electric Co Ltd | Communication control apparatus, and receiver mounted with the same |
| CN101645046A (en) * | 2008-08-05 | 2010-02-10 | 爱特梅尔公司 | Emulation eines einmal programmierbaren speichers |
| CN102567221A (en) * | 2010-12-29 | 2012-07-11 | 群联电子股份有限公司 | Data management method, memory controller and memory storage device |
| TW201303583A (en) * | 2011-07-06 | 2013-01-16 | Phison Electronics Corp | Command executing method, memory controller and memory storage apparatus |
| CN103218308A (en) * | 2012-01-20 | 2013-07-24 | 群联电子股份有限公司 | Buffer memory management method, memory controller and memory storage device |
| TW201345189A (en) * | 2012-04-26 | 2013-11-01 | Broadcom Corp | Frame formatting for communications within single user, multiple user, multiple access, and/or MIMO wireless communications |
| US20140258654A1 (en) * | 2013-03-06 | 2014-09-11 | Nec Corporation | Storage system |
| US9069489B1 (en) * | 2010-03-29 | 2015-06-30 | Marvell Israel (M.I.S.L) Ltd. | Dynamic random access memory front end |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI352354B (en) * | 2007-12-31 | 2011-11-11 | Phison Electronics Corp | Method for preventing read-disturb happened in non |
| US20100180183A1 (en) * | 2009-01-12 | 2010-07-15 | Macronix International Co., Ltd. | Circuit for reducing the read disturbance in memory |
-
2016
- 2016-08-08 TW TW105125097A patent/TWI604306B/en active
-
2017
- 2017-01-17 CN CN201710035085.0A patent/CN107704195A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200951969A (en) * | 2008-06-06 | 2009-12-16 | Phison Electronics Corp | Memory management method for non-volatile memory and controller using the same |
| JP2010016719A (en) * | 2008-07-04 | 2010-01-21 | Sanyo Electric Co Ltd | Communication control apparatus, and receiver mounted with the same |
| CN101645046A (en) * | 2008-08-05 | 2010-02-10 | 爱特梅尔公司 | Emulation eines einmal programmierbaren speichers |
| US9069489B1 (en) * | 2010-03-29 | 2015-06-30 | Marvell Israel (M.I.S.L) Ltd. | Dynamic random access memory front end |
| CN102567221A (en) * | 2010-12-29 | 2012-07-11 | 群联电子股份有限公司 | Data management method, memory controller and memory storage device |
| TW201303583A (en) * | 2011-07-06 | 2013-01-16 | Phison Electronics Corp | Command executing method, memory controller and memory storage apparatus |
| CN103218308A (en) * | 2012-01-20 | 2013-07-24 | 群联电子股份有限公司 | Buffer memory management method, memory controller and memory storage device |
| TW201345189A (en) * | 2012-04-26 | 2013-11-01 | Broadcom Corp | Frame formatting for communications within single user, multiple user, multiple access, and/or MIMO wireless communications |
| US20140258654A1 (en) * | 2013-03-06 | 2014-09-11 | Nec Corporation | Storage system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111464419A (en) * | 2020-04-13 | 2020-07-28 | 中国人民解放军国防科技大学 | Data transmission control method based on bus network communication |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201805810A (en) | 2018-02-16 |
| TWI604306B (en) | 2017-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8316176B1 (en) | Non-volatile semiconductor memory segregating sequential data during garbage collection to reduce write amplification | |
| EP3436953B1 (en) | Method and apparatus for processing sequential writes to a block group of physical blocks in a memory device | |
| EP3309685B1 (en) | Method and apparatus for writing data to cache | |
| US10657048B2 (en) | Garbage collection method for data storage device | |
| US20120254520A1 (en) | Non-volatile memory device, a data processing device using the same, and a swapping method used by the data processing and non-volatile memory devices | |
| US11675709B2 (en) | Reading sequential data from memory using a pivot table | |
| EP3059679B1 (en) | Controller, flash memory device, method for identifying data block stability and method for storing data on flash memory device | |
| JP2008016003A (en) | Memory storage device and its method for reading and writing data | |
| CN105095116A (en) | Cache replacing method, cache controller and processor | |
| JP2003512670A (en) | Linked list DMA descriptor architecture | |
| TWI521518B (en) | Method and device for storing data in flash memory device | |
| WO2016048599A1 (en) | Caching technologies employing data compression | |
| TWI841113B (en) | Memory addressing methods and associated controller | |
| TWI710905B (en) | Data storage device and method for loading logical-to-physical mapping table | |
| CN109164976A (en) | Optimize storage device performance using write buffer | |
| US20130179627A1 (en) | Method for managing buffer memory, memory controllor, and memory storage device | |
| US10296256B2 (en) | Two stage command buffers to overlap IOMMU map and second tier memory reads | |
| CN105988719A (en) | Storage device and data processing method thereof | |
| US9880930B2 (en) | Method for operating controller and method for operating device including the same | |
| CN107704195A (en) | Data storage device, memory controller and data management method thereof | |
| CN105653466A (en) | Data storage device and flash memory control method | |
| US9047959B1 (en) | Data storage device, memory control method, and electronic device with data storage device | |
| CN111324289A (en) | Memory device | |
| CN107203476A (en) | Data storage device, memory controller and data management method thereof | |
| TWI592943B (en) | Data management method for data storage device and memory controller |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |