CN107699825A - A kind of preparation method of high-intensity high-conductivity copper based composites - Google Patents
A kind of preparation method of high-intensity high-conductivity copper based composites Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/16—Making alloys containing metallic or non-metallic fibres or filaments by thermal spraying of the metal, e.g. plasma spraying
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/02—Pretreatment of the fibres or filaments
- C22C47/04—Pretreatment of the fibres or filaments by coating, e.g. with a protective or activated covering
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Abstract
The present invention relates to conductive metallic material preparing technical field, and in particular to a kind of preparation method of high-intensity high-conductivity copper based composites.The present invention causes rice husk surface to produce loose structure first in the presence of biogas slurry microorganism, thermal transition forms porous silicon carbide whisker under the catalytic action of iron powder again, followed by the attachment poly-dopamine film in the surface of porous silicon carbide whisker and micropore, chelating copper ions are anchored in silicon carbide whisker surface and internal void using poly-dopamine film, first decomposing poly-dopamine film under conditions of hydrogen and high temperature causes copper ion to expose again, copper ion is reduced into elemental copper with hydrogen again, so as to add the compatibility between silicon carbide whisker and Copper substrate and mutually spray collision by being vortexed shape to make the ceramics enhancing TiC that internal titanium and carborundum occur to chemically react and generation is new, Ti3SiC2、TiSi2Phase so that final obtained Cu-base composites can take into account intensity and electric conductivity simultaneously, have broad application prospects.
Description
Technical field
The present invention relates to conductive metallic material preparing technical field, and in particular to a kind of high-intensity high-conductivity copper base composite wood
The preparation method of material.
Background technology
With the continuous development of information technology, requirement more and more higher of the microelectronics industry to conductive metallic material is this to want
The trend asked, which is desirable to conductive metallic material, both has high conductivity, has high intensity and resistance to elevated temperatures again.For a long time, copper
And copper alloy is industrially conventional conductive metallic material, more than 75% copper and copper alloy are used to electrical equipment, electronics industry.And
Although fine copper is that its hardness, tensile strength and creep resistant are strong with the shortcomings that excellent electric conductivity and thermal conductivity, its is obvious
Spend it is relatively low, if its intensity is only the MPa of 230 MPa~290, though intensity is only up to 400 MPa, elongation percentage after cold deformation
2%, and lost quickly in drawing process.The main method that tradition improves copper alloy intensity is solution treatment and subsequent timeliness
Processing, because alloying element content is relatively low, precipitation strength effect is limited, and the addition of alloying element also can largely shadow
Conductance is rung, and by introducing appropriate enhancing phase（It is one or more）Complex intensifying mode can play matrix and reinforcing simultaneously
The synergy of material, has a very big design freedom again, but directly if addition enhancing material, due to enhancing material and copper-based
Compatibility between raw material is poor, still can not take into account the intensity and electric conductivity of composite.
Therefore, a kind of preparation method of novel copper-based composite is invented so that composite can take into account intensity simultaneously
There is positive meaning to conductive metallic material preparing technical field with electric conductivity.
The content of the invention
Present invention mainly solves technical problem, improve copper-based composite wood for common direct addition enhancing material at present
Material, the compatibility that can exist between enhancing material and copper-based raw materials is poor, still can not take into account the intensity and conduction of composite
A kind of the defects of performance, there is provided preparation method of high-intensity high-conductivity copper based composites.
In order to solve the above-mentioned technical problem, the technical solution adopted in the present invention is：
A kind of preparation method of high-intensity high-conductivity copper based composites, it is characterised in that specifically preparation process is：
（1）It is fitted into after rice husk and biogas slurry are mixed in fermentation tank, is sealed by fermentation, after fermentation ends, is separated by filtration and is fermented
Filter residue, dried after being rinsed with water, obtain drying fermentation filter residue；
（2）It will be fitted into after fermentation filter residue and iron powder mixing will be dried in vacuum drying oven, argon gas is passed through into vacuum drying oven until displacement is come out of the stove
Interior all air, Raise vacuum in-furnace temperature, insulation reaction, reaction are discharged after terminating, and oxidation processes are simultaneously rinsed with hydrofluoric acid, i.e.,
It can obtain porous silicon carbide whisker；
（3）Above-mentioned porous silicon carbide whisker is soaked with dopamine solution, is filtrated to get filter cake, then by filter cake and copper chloride solution
Sonic oscillation reacts after mixing, is separated by filtration to obtain filter residue；
（4）It is fitted into after above-mentioned filter residue and copper powder are mixed in graphite crucible, then graphite crucible is moved into high temperature sintering furnace, to burning
Hydrogen is passed through in freezing of a furnace until displacing air used, heat temperature raising, molten metal 1 is obtained after copper powder is completely melt；
（5）It is fitted into after copper powder and titanium valve are mixed in graphite crucible, then graphite crucible is moved into tube type resistance furnace, heating rises
Temperature, isothermal holding obtain molten metal 2, by above-mentioned molten metal 1 and molten metal 2 by etc. mass ratio mutually spray mixing to be vortexed shape,
Injected immediately in mold after mixing, natural cooling solidifies under 2~3MPa condition of high voltage, and high-strength high conductivity is produced after the demoulding
Cu-base composites.
Step（1）Described in rice husk and biogas slurry mass ratio be 1:5, the temperature of sealing and fermenting is 35~45 DEG C, sealing
The time of fermentation is 3~5 days.
Step（2）Described in dry fermentation filter residue and iron powder mass ratio be 50:1, the temperature of insulation reaction is 1100
~1500 DEG C, time of insulation reaction is 3~5h, and the temperature of oxidation processes is 700~800 DEG C, time of oxidation processes for 3~
5h。
Step（3）Described in the mass concentration of dopamine solution be 2g/L, soak time is 1~2h, filter cake and chlorination
The mass ratio of copper solution is 1:5, the mass fraction of copper chloride solution is 30%, and the frequency of sonic oscillation reaction is 30~40kHz,
The time of sonic oscillation reaction is 20~30min.
Step（4）Described in filter residue and copper powder mass ratio be 1:10, the speed that is passed through of hydrogen is 10mL/min, heating
The temperature of heating is 1200~1250 DEG C.
Step（5）Described in copper powder and titanium valve mass ratio be 10:1, the temperature of isothermal holding is 1700~1800 DEG C,
The time of isothermal holding is 1~2h.
The beneficial effects of the invention are as follows：
（1）The present invention by rice husk and biogas slurry mixed fermentation, causes the micro- corruption in rice husk surface, production in the presence of biogas slurry microorganism first
Raw loose structure, then thermal transition forms porous silicon carbide whisker under the catalytic action of iron powder by the rice husk of loose structure, then
Silicon carbide whisker is soaked using dopamine solution, it is anti-that self-crosslinked oxidation occurs in the presence of oxygen in water using dopamine
Should, it is thin using this strata dopamine so as to generate a strata dopamine film in the surface of porous silicon carbide whisker and micropore
The sequestering chelating copper ions by copper chloride solution at initial stage of film are anchored in silicon carbide whisker surface and internal void, then will
Silicon carbide whisker and the copper powder mixing of copper ion are chelated, first poly-dopamine film is decomposed under conditions of hydrogen and high temperature and caused
Copper ion is exposed again, then copper ion is reduced into elemental copper by hydrogen and is attached to silicon carbide whisker surface and hole
In, so as to add the compatibility between silicon carbide whisker and Copper substrate；
（2）Copper liquid containing silicon carbide whisker and the copper liquid containing titanium are mutually sprayed collision and in making by the present invention by being vortexed shape
Portion's titanium and carborundum occur chemical reaction and generate new ceramics enhancing TiC, Ti3SiC2、TiSi2Phase, and these enhancings are mutually
It is generated in-situ in intrinsic silicon progress, therefore the compatibility between Copper substrate is high so that finally obtained Cu-base composites can
To take into account intensity and electric conductivity simultaneously, have broad application prospects.
Embodiment
It is 1 in mass ratio:5 will rice husk and biogas slurry mix after is fitted into fermentation tank, it is 35~45 to seal after tank mouth in temperature
It is sealed by fermentation 3~5 days under conditions of DEG C, after fermentation ends, is separated by filtration to obtain fermentation filter residue, is dried after being rinsed 3~5 times with water
It is dry, obtain drying fermentation filter residue；It is 50 in mass ratio:1 will be fitted into vacuum drying oven after dry fermentation filter residue and iron powder mixing, Xiang Zhen
Argon gas is passed through in empty stove until displacement is come out of the stove interior all air, Raise vacuum in-furnace temperature is to 1100~1500 DEG C, insulation reaction 3
~5h, reaction terminate after discharge, at 700~800 DEG C 3~5h of oxidation processes and with mass fraction be 10% hydrofluoric acid flushing 3~
5 times, you can obtain porous silicon carbide whisker；By porous silicon carbide whisker with mass concentration be 2g/L dopamine solutions immersion 1~
2h, filter cake is filtrated to get, then by filter cake and mass fraction is that 30% copper chloride solution is 1 in mass ratio:Shaken after 5 mixing with ultrasound
Instrument is swung with 30~40kHz frequency ultrasound 20~30min of oscillating reactions, is separated by filtration to obtain filter residue；Filter residue and copper powder are pressed into matter
Amount is than being 1:It is fitted into after 10 mixing in graphite crucible, then graphite crucible is moved into high temperature sintering furnace, with 10mL/min speed
Hydrogen is passed through into sintering furnace until displacing air used, 1200~1250 DEG C are heated to, after copper powder is completely melt
Obtain molten metal 1；It is 10 in mass ratio by copper powder and titanium valve:It is fitted into after 1 mixing in graphite crucible, then graphite crucible is moved into and managed
In formula resistance furnace, 1700~1800 DEG C are heated to, 1~2h of isothermal holding obtains molten metal 2, by above-mentioned molten metal 1 and gold
Category liquid 2 injects in mold, in 2~3MPa condition of high voltage immediately by waiting mass ratio mutually to spray mixing to be vortexed shape after mixing
Lower natural cooling solidification, produces high-intensity high-conductivity copper based composites after the demoulding.
Example 1
It is 1 in mass ratio:5 will rice husk and biogas slurry mix after is fitted into fermentation tank, it is 35 DEG C of condition to seal after tank mouth in temperature
It is lower to be sealed by fermentation 3 days, after fermentation ends, it is separated by filtration to obtain fermentation filter residue, is dried after being rinsed 3 times with water, obtain drying hair
Ferment filter residue；It is 50 in mass ratio:1 will be fitted into vacuum drying oven after dry fermentation filter residue and iron powder mixing, and argon is passed through into vacuum drying oven
Gas interior all air until displacement is come out of the stove, to 1100 DEG C, insulation reaction 3h, reaction discharges Raise vacuum in-furnace temperature after terminating,
At 700 DEG C oxidation processes 3h and with mass fraction be 10% hydrofluoric acid rinse 3 times, you can obtain porous silicon carbide whisker；To be more
Hole silicon carbide whisker is 2g/L dopamine solutions immersion 1h with mass concentration, is filtrated to get filter cake, then by filter cake and mass fraction
It is 1 in mass ratio for 30% copper chloride solution:With sonic oscillation instrument with 30kHz frequency ultrasound oscillating reactions 20min after 5 mixing,
It is separated by filtration to obtain filter residue；It is 1 in mass ratio by filter residue and copper powder:It is fitted into after 10 mixing in graphite crucible, then by graphite crucible
Move into high temperature sintering furnace, hydrogen is passed through into sintering furnace with 10mL/min speed until displacing air used, heating rises
Temperature obtains molten metal 1 to 1200 DEG C after copper powder is completely melt；It is 10 in mass ratio by copper powder and titanium valve:Load stone after 1 mixing
In black crucible, then by graphite crucible immigration tube type resistance furnace, 1700 DEG C being heated to, isothermal holding 1h obtains molten metal 2,
By above-mentioned molten metal 1 and molten metal 2 by etc. mass ratio mutually spray mixing to be vortexed shape, injected immediately in mold after mixing,
Natural cooling solidifies under 2MPa condition of high voltage, and high-intensity high-conductivity copper based composites are produced after the demoulding.
Example 2
It is 1 in mass ratio:5 will rice husk and biogas slurry mix after is fitted into fermentation tank, it is 40 DEG C of condition to seal after tank mouth in temperature
It is lower to be sealed by fermentation 4 days, after fermentation ends, it is separated by filtration to obtain fermentation filter residue, is dried after being rinsed 4 times with water, obtain drying hair
Ferment filter residue；It is 50 in mass ratio:1 will be fitted into vacuum drying oven after dry fermentation filter residue and iron powder mixing, and argon is passed through into vacuum drying oven
Gas interior all air until displacement is come out of the stove, to 1300 DEG C, insulation reaction 4h, reaction discharges Raise vacuum in-furnace temperature after terminating,
At 750 DEG C oxidation processes 4h and with mass fraction be 10% hydrofluoric acid rinse 4 times, you can obtain porous silicon carbide whisker；To be more
Hole silicon carbide whisker is 2g/L dopamine solutions immersion 2h with mass concentration, is filtrated to get filter cake, then by filter cake and mass fraction
It is 1 in mass ratio for 30% copper chloride solution:With sonic oscillation instrument with 35kHz frequency ultrasound oscillating reactions 25min after 5 mixing,
It is separated by filtration to obtain filter residue；It is 1 in mass ratio by filter residue and copper powder:It is fitted into after 10 mixing in graphite crucible, then by graphite crucible
Move into high temperature sintering furnace, hydrogen is passed through into sintering furnace with 10mL/min speed until displacing air used, heating rises
Temperature obtains molten metal 1 to 1230 DEG C after copper powder is completely melt；It is 10 in mass ratio by copper powder and titanium valve:Load stone after 1 mixing
In black crucible, then by graphite crucible immigration tube type resistance furnace, 1750 DEG C being heated to, isothermal holding 1h obtains molten metal 2,
By above-mentioned molten metal 1 and molten metal 2 by etc. mass ratio mutually spray mixing to be vortexed shape, injected immediately in mold after mixing,
Natural cooling solidifies under 3MPa condition of high voltage, and high-intensity high-conductivity copper based composites are produced after the demoulding.
Example 3
It is 1 in mass ratio:5 will rice husk and biogas slurry mix after is fitted into fermentation tank, it is 45 DEG C of condition to seal after tank mouth in temperature
It is lower to be sealed by fermentation 5 days, after fermentation ends, it is separated by filtration to obtain fermentation filter residue, is dried after being rinsed 5 times with water, obtain drying hair
Ferment filter residue；It is 50 in mass ratio:1 will be fitted into vacuum drying oven after dry fermentation filter residue and iron powder mixing, and argon is passed through into vacuum drying oven
Gas interior all air until displacement is come out of the stove, to 1500 DEG C, insulation reaction 5h, reaction discharges Raise vacuum in-furnace temperature after terminating,
At 800 DEG C oxidation processes 5h and with mass fraction be 10% hydrofluoric acid rinse 5 times, you can obtain porous silicon carbide whisker；To be more
Hole silicon carbide whisker is 2g/L dopamine solutions immersion 2h with mass concentration, is filtrated to get filter cake, then by filter cake and mass fraction
It is 1 in mass ratio for 30% copper chloride solution:With sonic oscillation instrument with 40kHz frequency ultrasound oscillating reactions 30min after 5 mixing,
It is separated by filtration to obtain filter residue；It is 1 in mass ratio by filter residue and copper powder:It is fitted into after 10 mixing in graphite crucible, then by graphite crucible
Move into high temperature sintering furnace, hydrogen is passed through into sintering furnace with 10mL/min speed until displacing air used, heating rises
Temperature obtains molten metal 1 to 1250 DEG C after copper powder is completely melt；It is 10 in mass ratio by copper powder and titanium valve:Load stone after 1 mixing
In black crucible, then by graphite crucible immigration tube type resistance furnace, 1800 DEG C being heated to, isothermal holding 2h obtains molten metal 2,
By above-mentioned molten metal 1 and molten metal 2 by etc. mass ratio mutually spray mixing to be vortexed shape, injected immediately in mold after mixing,
Natural cooling solidifies under 3MPa condition of high voltage, and high-intensity high-conductivity copper based composites are produced after the demoulding.
Reference examples
Reference examples are used as using the graphene enhancing Cu-base composites of Harbin company production
Performance detection is carried out to the Cu-base composites of the present invention and reference examples, testing result is as shown in table 1：
Detection method：
The tensile sample prepared using wire cutting carries out room temperature tensile properties test, rate of extension on AGS-J universal testing machines
For 0. 5mm/min, the stretched width of tensile sample is 5mm, and tensile elongation is 13 mm, sample thickness 2mm.
With the electrical conductivity of conductivity meter test compound material.
With the hardness of high temperature Vickers hardness instrument test material.
Table 1
From detecting data in upper table, high-intensity high-conductivity copper based composites produced by the present invention while have splendid strong
Degree and electric conductivity, have broad application prospects.
Claims (6)
1. a kind of preparation method of high-intensity high-conductivity copper based composites, it is characterised in that specifically preparation process is：
（1）It is fitted into after rice husk and biogas slurry are mixed in fermentation tank, is sealed by fermentation, after fermentation ends, is separated by filtration and is fermented
Filter residue, dried after being rinsed with water, obtain drying fermentation filter residue；
（2）It will be fitted into after fermentation filter residue and iron powder mixing will be dried in vacuum drying oven, argon gas is passed through into vacuum drying oven until displacement is come out of the stove
Interior all air, Raise vacuum in-furnace temperature, insulation reaction, reaction are discharged after terminating, and oxidation processes are simultaneously rinsed with hydrofluoric acid, i.e.,
It can obtain porous silicon carbide whisker；
（3）Above-mentioned porous silicon carbide whisker is soaked with dopamine solution, is filtrated to get filter cake, then by filter cake and copper chloride solution
Sonic oscillation reacts after mixing, is separated by filtration to obtain filter residue；
（4）It is fitted into after above-mentioned filter residue and copper powder are mixed in graphite crucible, then graphite crucible is moved into high temperature sintering furnace, to burning
Hydrogen is passed through in freezing of a furnace until displacing air used, heat temperature raising, molten metal 1 is obtained after copper powder is completely melt；
（5）It is fitted into after copper powder and titanium valve are mixed in graphite crucible, then graphite crucible is moved into tube type resistance furnace, heating rises
Temperature, isothermal holding obtain molten metal 2, by above-mentioned molten metal 1 and molten metal 2 by etc. mass ratio mutually spray mixing to be vortexed shape,
Injected immediately in mold after mixing, natural cooling solidifies under 2~3MPa condition of high voltage, and high-strength high conductivity is produced after the demoulding
Cu-base composites.
A kind of 2. preparation method of high-intensity high-conductivity copper based composites according to claim 1, it is characterised in that：Step
Suddenly（1）Described in rice husk and biogas slurry mass ratio be 1:5, the temperature of sealing and fermenting is 35~45 DEG C, the time of sealing and fermenting
For 3~5 days.
A kind of 3. preparation method of high-intensity high-conductivity copper based composites according to claim 1, it is characterised in that：Step
Suddenly（2）Described in dry fermentation filter residue and iron powder mass ratio be 50:1, the temperature of insulation reaction is 1100~1500 DEG C, is protected
The time of temperature reaction is 3~5h, and the temperature of oxidation processes is 700~800 DEG C, and the time of oxidation processes is 3~5h.
A kind of 4. preparation method of high-intensity high-conductivity copper based composites according to claim 1, it is characterised in that：Step
Suddenly（3）Described in the mass concentration of dopamine solution be 2g/L, soak time is 1~2h, filter cake and copper chloride solution matter
Amount is than being 1:5, the mass fraction of copper chloride solution is 30%, and the frequency of sonic oscillation reaction is 30~40kHz, and sonic oscillation is anti-
The time answered is 20~30min.
A kind of 5. preparation method of high-intensity high-conductivity copper based composites according to claim 1, it is characterised in that：Step
Suddenly（4）Described in filter residue and copper powder mass ratio be 1:10, the speed that is passed through of hydrogen is 10mL/min, the temperature of heat temperature raising
For 1200~1250 DEG C.
A kind of 6. preparation method of high-intensity high-conductivity copper based composites according to claim 1, it is characterised in that：Step
Suddenly（5）Described in copper powder and titanium valve mass ratio be 10:1, the temperature of isothermal holding is 1700~1800 DEG C, isothermal holding
Time is 1~2h.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108486401A (en) * | 2018-05-25 | 2018-09-04 | 北汽新能源汽车常州有限公司 | Al-alloy, preparation method and application |
| CN109638292A (en) * | 2018-11-02 | 2019-04-16 | 北京泰丰先行新能源科技有限公司 | Lithium metal battery cathode porous copper current collector and preparation method thereof |
| CN112108158A (en) * | 2020-10-17 | 2020-12-22 | 左海珍 | Preparation method of electrochemical deposition Pt-porous copper-based whisker catalyst material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104404511A (en) * | 2014-12-05 | 2015-03-11 | 太原理工大学 | Preparation method of dopamine biomass anti-corrosive film on magnesium alloy surface |
| CN105016761A (en) * | 2014-04-29 | 2015-11-04 | 中国科学院上海硅酸盐研究所 | Brazed connection method of C/SiC composite materials |
| CN106191514A (en) * | 2016-08-09 | 2016-12-07 | 苏州金仓合金新材料有限公司 | A kind of multiduty Cu-base composites and preparation method thereof |
| CN106753196A (en) * | 2016-12-25 | 2017-05-31 | 常州创索新材料科技有限公司 | A kind of preparation method of high temperature resistant dimensional stability Metal adhesive |
-
2017
- 2017-09-19 CN CN201710847272.9A patent/CN107699825B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105016761A (en) * | 2014-04-29 | 2015-11-04 | 中国科学院上海硅酸盐研究所 | Brazed connection method of C/SiC composite materials |
| CN104404511A (en) * | 2014-12-05 | 2015-03-11 | 太原理工大学 | Preparation method of dopamine biomass anti-corrosive film on magnesium alloy surface |
| CN106191514A (en) * | 2016-08-09 | 2016-12-07 | 苏州金仓合金新材料有限公司 | A kind of multiduty Cu-base composites and preparation method thereof |
| CN106753196A (en) * | 2016-12-25 | 2017-05-31 | 常州创索新材料科技有限公司 | A kind of preparation method of high temperature resistant dimensional stability Metal adhesive |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108486401A (en) * | 2018-05-25 | 2018-09-04 | 北汽新能源汽车常州有限公司 | Al-alloy, preparation method and application |
| CN109638292A (en) * | 2018-11-02 | 2019-04-16 | 北京泰丰先行新能源科技有限公司 | Lithium metal battery cathode porous copper current collector and preparation method thereof |
| CN109638292B (en) * | 2018-11-02 | 2021-12-28 | 北京泰丰先行新能源科技有限公司 | Porous copper current collector for lithium metal battery cathode and preparation method thereof |
| CN112108158A (en) * | 2020-10-17 | 2020-12-22 | 左海珍 | Preparation method of electrochemical deposition Pt-porous copper-based whisker catalyst material |
| CN112108158B (en) * | 2020-10-17 | 2022-08-26 | 广东创新发铜业有限公司 | Preparation method of electrochemical deposition Pt-porous copper-based whisker catalyst material |
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