CN107665868B - Wafer cooling method and wafer cooling apparatus - Google Patents
Wafer cooling method and wafer cooling apparatus Download PDFInfo
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- CN107665868B CN107665868B CN201610616766.1A CN201610616766A CN107665868B CN 107665868 B CN107665868 B CN 107665868B CN 201610616766 A CN201610616766 A CN 201610616766A CN 107665868 B CN107665868 B CN 107665868B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
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Abstract
The invention discloses a wafer cooling method and wafer cooling equipment. The wafer cooling method is used for degassing and cooling wafers which are processed in a cooling area, wherein the cooling area is provided with cooling grooves, and preset grooves for placing the wafers are selected from the cooling grooves according to the number of designated process chambers participating in the process, the processing time of a single wafer and the cooling time, and are uniformly distributed in the cooling area. The technical problem solved by the method provided by the invention is to reduce the pollution degree of the cooling tank.
Description
Technical Field
The invention belongs to the technical field of semiconductor wafer cooling, and particularly relates to a wafer cooling method and wafer cooling equipment.
Background
In the field of semiconductor wafer cooling, common semiconductor wafer cooling processes include vapor deposition, sputtering, and the like. The above processes are generally performed in a process chamber, since the process requires control of environmental conditions such as temperature, pressure, atmosphere, etc. After the semiconductor wafer is processed, it needs to be cooled, and after the temperature is returned to room temperature, the subsequent processes such as packaging and assembling can be performed.
Those skilled in the art typically provide dedicated cooling stations on the processing equipment for receiving semiconductor wafers. On one hand, the cooling station provides a cooling place for the processed wafer, and the wafer is conveyed into the cooling station to be cooled and taken out after being cooled to normal room temperature. Taking high temperature processes such as dry photoresist stripping as an example, the temperature of the base in the processing process generally reaches more than 200 ℃. At this time, if the processed wafer is taken out from the process chamber and directly transferred back to the cassette, the cassette is easily damaged. Therefore, cooling is necessary before transferring back to the cassette. On the other hand, the cooling chamber also has a ventilation function to remove the process residual gas adhering to the wafer surface. In vapor deposition type processes, when a wafer is transported from a process chamber, the wafer carries away process gases, which are reaction gases or reaction products, adsorbed on the surface of the wafer. If the wafer is directly transported back to the pod, the process gases around the wafer may contaminate the pod, thereby affecting the yield of the wafers received in the pod.
Disclosure of Invention
An object of the present invention is to provide a new solution for cooling wafers.
According to a first aspect of the present invention, there is provided a wafer cooling method for performing degas cooling of a wafer subjected to process in a cooling zone, characterized in that cooling grooves are provided in the cooling zone, and predetermined grooves for placing wafers are selected among the cooling grooves according to a specified number of process chambers participating in a process, a process time for a single wafer, and a cooling time, the predetermined grooves being uniformly distributed in the cooling zone.
Optionally, the cooling tanks are arranged in the cooling area in sequence, and one or a plurality of cooling tanks spaced from each other are selected from the cooling tank in the middle of the cooling area as predetermined tanks;
alternatively, all the cooling tanks are selected as the predetermined tanks.
Optionally, the number of the designated process chambers is 1, and the process processing time of a single wafer is longer than the cooling time, selecting a cooling groove located in the middle of the cooling area as the predetermined groove;
or, if the number of the designated process chambers is 1 and the process processing time of a single wafer is shorter than the cooling time, at least 2 cooling grooves spaced from each other are selected as the predetermined grooves.
Alternatively, if the process time of a single wafer is one third of the cooling time, 3 cooling grooves are selected as the predetermined grooves.
Alternatively, if the number of the process chambers is 2 and the process time of a single wafer is equal to the cooling time, 2 cooling grooves spaced from each other are selected as the predetermined grooves.
Optionally, a total of 7 cooling grooves are provided in the cooling area, the number of the process chambers is 1, the processing time of the single wafer is one fifth of the cooling time, and all the cooling grooves are used as the predetermined grooves.
Alternatively, if a total of 7 cooling grooves are provided in the cooling region, 4, 3, or 2 cooling grooves spaced apart from each other are selected as the predetermined grooves.
Optionally, the number of wafers to be cooled is the same as the number of designated process chambers participating in the process.
The invention also provides a wafer cooling device for the method, which comprises the following steps:
a cooling device for providing a cooling zone, the cooling device having a cooling slot disposed therein;
a control module configured to select predetermined slots for placing wafers among the cooling slots according to a designated number of process chambers participating in a process, a process processing time of a single wafer, and a cooling time, the predetermined slots being uniformly distributed in the cooling region.
Optionally, the cooling tanks are arranged in the device in sequence, and the control module is configured to select one cooling tank from the middle of the cooling area or select a plurality of cooling tanks spaced from each other as the predetermined tank from both sides;
alternatively, all the cooling tanks are selected as the predetermined tanks.
In the prior art, the cooling method of the wafer is simple and effective, and in order to prevent the temperature of the wafer and the process gas brought by the wafer from polluting the crystal box, the method of sequentially placing the processed wafers in a cooling station for cooling is a common method, and a person skilled in the art does not know how to be unfavorable for the cooling method. Even if the cooling station is contaminated with process gases, it is generally accepted by those skilled in the art that the wafers are retained therein for a short period of time, and such contamination does not affect the wafers. However, the inventors of the present invention have found that the contamination of the cooling bath due to the improper use of the cooling station is very serious, and the wafer yield may be affected even though the wafer stays for a short time. Therefore, the technical task to be achieved or the technical problems to be solved by the present invention are never thought or anticipated by those skilled in the art, and therefore the present invention is a new technical solution.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic top view of a wafer cooling apparatus according to an embodiment of the present invention.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
The present invention provides a novel wafer cooling method for degas cooling a wafer subjected to a process in a cooling zone, which method allows selection of the location of the wafer to be transported to the cooling zone to reduce the degree of contamination of the cooling bath with process gases. Further, the utilization rate of the cooling tank can be improved. The method provided by the invention comprises the following basic steps: a cooling groove is arranged in the cooling area; depending on the number of assigned process chambers involved in the process of the wafers, the individual required process time for each wafer and the required cooling time thereof, a predetermined slot for placing and cooling the wafers is selected among all the cooling slots, in particular, it is ensured that the predetermined slot is uniformly distributed in the cooling zone. The cooling method provides conditions for rapid diffusion of residual gas, and can reduce the pollution of the cooling tank by the process gas.
The wafer cooling method of the invention can be combined into a set of complete wafer processing and cooling procedures, and comprises the following specific steps:
first, a wafer processing apparatus having a process chamber for performing a processing process such as vapor deposition, sputtering, etc. on a wafer is provided. The wafer processing equipment can also comprise components such as a transmission arm, a pneumatic control device and the like, and is used for transporting the wafer, controlling the air pressure and atmosphere and the like.
Secondly, vacuum treatment is carried out on a specific area of the wafer processing equipment, namely, the environment where the wafer is located is vacuumized to achieve specific conditions of process processing and pollution prevention, and further, the wafer is conveyed to the interior of a designated process chamber participating in the process processing, the process chamber is sealed, and the process processing is started. In a second step, the interior of the process chamber may be pre-evacuated, the wafer first transferred to the transition chamber, the transition chamber subjected to a vacuum to equalize the pressure within the chamber with the process chamber, and then the wafer transferred from the transition chamber to the interior of the process chamber.
Third, a cooling zone is provided for receiving the processed wafer for cooling therein. The cooling area is provided with cooling grooves, and one cooling groove can be used for placing one wafer. In particular, the method selects a predetermined slot from the cooling slots according to the number of the designated process chambers participating in the process, the processing time of the wafer in the designated process chambers and the cooling time required by the wafer after the processing is finished, wherein the predetermined slot is a cooling slot which is actually used in one processing production flow, and the cooling slot which is not selected as the predetermined slot is not used in the current processing production flow. The predetermined grooves are uniformly distributed in the cooling area, for example, in an embodiment, 5 cooling grooves are sequentially arranged in the cooling area, if two cooling grooves are required to be selected as the predetermined grooves, 2 nd and 4 th cooling grooves uniformly distributed in the cooling area are selected as the predetermined grooves, and 1 st, 2 nd or 4 th and 5 th cooling grooves concentrated close to the edge or the position are not selected as the predetermined grooves in the cooling area; if three cooling channels are to be selected as the predetermined channels, the 1 st, 3 rd, and 5 th cooling channels are to be selected as the predetermined channels, which are uniformly and equally spaced in the cooling region, and the 1 st, 2 nd, 3 rd, or 3 rd, 4 th, and 5 th cooling channels are not to be selected as the predetermined channels, which are relatively concentrated and biased to one side in the cooling region. Further, since the processing time and the cooling time of the single wafer are different in different processing production flows, different numbers of cooling grooves can be selected as the predetermined grooves for different processing production flows in order to improve the utilization rate of the cooling area and avoid the influence of the cooling process on the production efficiency. Taking an embodiment as an example, if 5 cooling grooves are provided in the cooling region, 1 to 5 cooling grooves may be selected as the predetermined groove depending on the process time and the cooling time.
And fourthly, taking out the wafer after the processing is finished from the appointed process chamber, and sending the wafer into the selected preset groove for cooling. And removing the wafer from the predetermined groove after the wafer is cooled to the normal temperature of the groove.
In the prior art, the conventional processing method is to scan each cooling tank from a low tank position to a high tank position of the cooling station, and if a vacant cooling tank is confirmed, a wafer which has completed the process processing is put into the vacant cooling tank. This cooling method is simple and is commonly used by those skilled in the art. However, the inventor of the present invention has found that the conventional method has a high utilization rate for the cooling slot of the low slot position, but the cooling slot of the high slot position is hardly used. For example, in a process flow, when 3 wafers are cooled in a cooling station, only the 1 st to 3 rd cooling tanks are used, and the 4 th and 5 th cooling tanks are not used; in another set of process flow, 2 wafers need to be cooled at the same time, and only the 1 st and 2 nd cooling tanks are used. It can be seen that the higher the slot, e.g., the 4 th and 5 th cooling slots are rarely used, and the lower the slot, e.g., the 1 st and 2 nd cooling slots are used almost every time. The inventors of the present invention further found that the cooling tank with too high usage rate is contaminated by the process gas adsorbed on the wafer surface, and the long-term environmental pollution may eventually damage the cooling tank or affect the wafer yield. On the other hand, the cooling channels used in the prior art are all close to each other, and this way of cooling concentrated in one area is not good for the diffusion of process gas and heat.
The wafer cooling method provided by the invention can properly select a part of the cooling grooves for cooling the wafer according to the processing time and the cooling time. The cooling bath that chooses, predetermined groove are evenly distributed in the cooling zone, like this, can not concentrate only to use the cooling bath of low trench, but evenly uses the cooling bath that is located each trench, prevents that the cooling bath from receiving pollution or damage.
Optionally, the wafer cooling apparatus usually has a plurality of process chambers in which process processes can be performed, so that a plurality of wafers can be processed simultaneously in the plurality of process chambers of the wafer processing apparatus according to the actual process flow. Firstly, a designated process chamber participating in the process is selected from a plurality of process chambers of the wafer processing equipment, wherein the designated process chamber is a process chamber which is actually required to be used. A plurality of wafers to be processed can be respectively and simultaneously placed in a designated process chamber for process processing.
The invention specifically provides a method for selecting a predetermined slot and allocating a position of the predetermined slot. In the cooling region, the cooling grooves may be arranged in series. When the cooling bath is selected as the predetermined bath, first, the number of cooling baths required is calculated based on the number of process chambers, the process time for the individual wafer, and the cooling time. Then, the cooling grooves spaced apart from each other may be selected as the predetermined grooves in sequence from the cooling groove located at the center toward both sides. If only one preset groove is needed, selecting the cooling groove at the middle as the preset groove; if two preset grooves are needed, the cooling grooves on the left side and the right side of the middle cooling groove are selected as the preset grooves; if three preset grooves are needed, selecting the middle cooling groove and the cooling grooves at the two sides of the middle cooling groove which are respectively positioned at the second positions as the preset grooves, and so on; if the number of the required predetermined slots is large and the number of all the cooling slots cannot satisfy the predetermined slots distributed at intervals, all the cooling slots may be set as the predetermined slots.
On the basis of the specific method, if the number of the designated process chambers is 1 and the process processing time of a single wafer is longer than the cooling time, one wafer is cooled in the processing line, and another wafer which is processed does not wait for cooling. In this case, one cooling groove located at the center of the cooling region may be selected as the predetermined groove for cooling the wafer.
Similarly, the number of the designated process chambers is 1, and the process time of a single wafer is less than the cooling time, so that when one wafer is cooled in the process line, other wafers are sequentially processed and need to be cooled. In this case, it is necessary to select at least 2 cooling grooves spaced apart from each other as the predetermined grooves to reduce the time for the wafer to wait for cooling. Several predetermined slots are specifically selected depending on the ratio of process time to cooling time.
For example, in one case, the number of process chambers is specified to be 1, and the process processing time for a single wafer is one third of the cooling time. In a processing line, while one wafer is being cooled, at least two more wafers are processed and need to be cooled. Therefore, 3 cooling grooves spaced from each other can be selected as the predetermined grooves to ensure the processing efficiency and reduce the waiting cooling of the wafer.
In another specific case, if the number of the designated process chambers is 2 and the processing time of a single wafer is exactly the same as the time required for cooling, 2 cooling grooves spaced from each other may be selected as the predetermined grooves in the cooling region.
In the various embodiments described above, the predetermined slots should be uniformly distributed in the cooling area, and the predetermined slots should be equally spaced as much as possible, so as to ensure the rapid diffusion of the sweep gas and reduce the problem of the cooling slot being polluted by the sweep gas.
Further, the embodiment of the present invention specifically provides a method for determining the number of the predetermined grooves, wherein, taking 7 cooling grooves in the cooling area as an example, the number of the predetermined grooves is W, the number of the process chambers is designated as C, the process processing time is designated as P, and the cooling time is designated as L. Then the algorithm for predetermining the number of slots in the case of ignoring the time of transmission is:
in equation (a), Ceiling () represents rounding up and Min () represents the minimum.
For example, in one embodiment, if the number C of the process chambers is 2, the process processing time P is 2 minutes, and the cooling time L is 8 minutes, i.e., the processing time of a single wafer is one fourth of the cooling time, then the number W of the predetermined slots is 7 through the above calculation method. In another embodiment, if the number of designated process chambers C is 2, the process processing time P is 2 minutes, and the cooling time L is 2 minutes, the number of predetermined slots W is 2 in this case.
Further, taking an example in which 7 cooling grooves are arranged in the cooling area in sequence, if the number of the predetermined grooves is 1, one cooling groove located in the middle of the cooling area is selected as the predetermined groove, for example, the 4 th cooling groove is selected as the predetermined groove, in order to diffuse the process gas and the temperature adhering to the wafer as soon as possible. And if the number of the preset grooves is more than or equal to 2, sequentially selecting the cooling grooves as the preset grooves along the direction from the middle to the edge of the cooling area. For example, if the number of the predetermined grooves is 3, 2 nd, 4 th, and 6 th cooling grooves may be selected as the predetermined grooves, or 3 rd, 4 th, and 5 th cooling grooves may be selected as the predetermined grooves.
Preferably, in order to further increase the diffusion rate of the process gas and the temperature, when the number of the predetermined grooves is 2 or more, the predetermined grooves are preferably selected to be spaced apart from each other, so that the process gas and the temperature are more effectively carried away by the flowing gas. For example, when the number of the predetermined grooves is 3, 2 nd, 4 th, and 6 th cooling grooves are preferably selected as the predetermined grooves. Based on the above-described method for selecting the predetermined grooves, when 7 cooling grooves are sequentially provided in the cooling region, the number of the predetermined grooves is preferably 1, 2, 3, or 4, and the predetermined grooves are spaced apart from each other. If the number of wafers to be cooled at the same time is too large, all the cooling grooves may be selected as the predetermined grooves.
In addition, the number of the designated process chambers is in the range of 1-4 in order to avoid the excessive number of wafers which need to be cooled simultaneously and affect the efficiency of the processing production flow. Of course, the invention is not limited thereto, and those skilled in the art can adjust the processing conditions according to the particular process.
Alternatively, the number of wafers to be cooled may be the same as the number of designated process chambers participating in the process.
The invention also provides wafer cooling equipment for realizing the cooling method, which comprises a cooling device and a control module, wherein the cooling device is used for providing a cooling area, and a cooling groove is arranged in the cooling device. The control module is configured to select predetermined slots for placing wafers among the cooling slots according to a designated number of process chambers participating in a process, a process processing time of a single wafer, and a cooling time, the predetermined slots being uniformly distributed in the cooling region.
Alternatively, the cooling tanks are arranged in the cooling device in sequence, and the control module is configured to select one cooling tank as the predetermined tank from the cooling tank in the middle of the cooling area, or select a plurality of cooling tanks spaced from each other as the predetermined tank from the cooling tank in the middle to both sides thereof in sequence. In a special case, all the cooling tanks may be selected as the predetermined tank.
Specifically, the present invention combines the above-described wafer cooling apparatus with a processing apparatus, and provides the following wafer processing apparatus. As shown in fig. 1, including a process chamber 1, a vacuum transfer chamber 21, a vacuum robot 22, a cooling device 3, and a control module. The process chamber 1 is used for carrying out process processing on wafers, and a wafer cooling device can comprise a plurality of process chambers 1. Depending on the actual production situation, the control module may select some or all of these process chambers 1 as designated process chambers. The vacuum transfer chamber 21 is used for providing a vacuum environment for the wafer, and when the wafer moves into the vacuum transfer chamber 21, the vacuum transfer chamber 21 can pump out the gas inside to form the vacuum environment. The vacuum transfer chamber 21 communicates with the process chamber 1. The vacuum robot 22 is disposed in the vacuum transfer chamber 21 for transferring a wafer. The cooling device 3 is used for providing a cooling area, and a plurality of cooling grooves arranged in sequence can be arranged in the cooling device 3. The cooling region in the cooling device 3 may communicate with the vacuum transfer chamber 21, and the wafer subjected to the process may be transferred from the vacuum transfer chamber 21 to the cooling device 3. The control module is used for controlling the processing process of the wafer cooling equipment, and particularly, the control module is used for selecting a preset groove in the cooling groove according to the number of the designated process chambers, the processing time of a single wafer and the cooling time of the single wafer. The wafer cooling equipment provided by the invention can realize the wafer cooling method, so that only part of the cooling grooves with low groove positions are prevented from being used, and further, the damage of the cooling grooves or the pollution to the inside of the cooling grooves are avoided.
Preferably, 7 cooling grooves can be arranged in the cooling device 3 in sequence for optional use, and the wafer cooling device has 4 process chambers 1 which can be used for carrying out process processing on wafers.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (10)
1. A wafer cooling method for degassing and cooling a wafer subjected to process in a cooling area, wherein the cooling area is provided with cooling grooves, predetermined grooves for placing the wafer are selected from the cooling grooves according to the number of designated process chambers participating in the process, the process processing time of a single wafer and the cooling time, and the predetermined grooves are uniformly distributed in the cooling area.
2. The method according to claim 1, wherein the cooling grooves are arranged in the cooling zone in sequence, and one cooling groove is selected from the cooling grooves in the middle of the cooling zone or a plurality of cooling grooves spaced from each other are selected from both sides in sequence as predetermined grooves;
alternatively, all the cooling tanks are selected as the predetermined tanks.
3. The method according to claim 1 or 2, wherein the number of the designated process chambers is 1, and the process processing time of a single wafer is longer than the cooling time, one cooling groove located in the middle of the cooling area is selected as the predetermined groove;
or, if the number of the designated process chambers is 1 and the process processing time of a single wafer is shorter than the cooling time, at least 2 cooling grooves spaced from each other are selected as the predetermined grooves.
4. The method as claimed in claim 3, wherein the process processing time of the single wafer is one third of the cooling time, and 3 cooling grooves are selected as the predetermined grooves.
5. The method as claimed in claim 1 or 2, wherein the number of the process chambers is specified to be 2, and the process time for a single wafer is equal to the cooling time, 2 cooling grooves spaced from each other are selected as the predetermined grooves.
6. The method of claim 2, wherein 7 cooling grooves are provided in the cooling area, the number of the process chambers is 2, and the processing time of the wafer is one fourth of the cooling time, and all the cooling grooves are used as the predetermined grooves.
7. A method according to claim 2, characterized in that a total of 7 cooling channels are provided in the cooling zone, 4, 3 or 2 cooling channels spaced apart from one another being selected as predetermined channels.
8. A method according to claim 1 or 2, characterized in that the number of wafers to be cooled is the same as the number of assigned process chambers participating in the process.
9. A wafer cooling apparatus for use in the method of any one of claims 1 to 8, comprising:
a cooling device for providing a cooling zone, the cooling device having a cooling slot disposed therein;
a control module configured to select predetermined slots for placing wafers among the cooling slots according to a designated number of process chambers participating in a process, a process processing time of a single wafer, and a cooling time, the predetermined slots being uniformly distributed in the cooling region.
10. The wafer cooling apparatus according to claim 9, wherein the cooling grooves are arranged in the cooling device in a row, and the control module is configured to select one cooling groove from the middle of the cooling region or select a plurality of cooling grooves spaced from each other as the predetermined groove in a row to both sides;
alternatively, all the cooling tanks are selected as the predetermined tanks.
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| JPH07254538A (en) * | 1994-03-15 | 1995-10-03 | Toshiba Mach Co Ltd | Heat treatment device |
| JP2006222328A (en) * | 2005-02-14 | 2006-08-24 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus |
| WO2008106520A2 (en) * | 2007-02-28 | 2008-09-04 | Semitool, Inc. | Single wafer anneal processor |
| TW200845279A (en) * | 2007-03-20 | 2008-11-16 | Sokudo Co Ltd | Substrate transport apparatus and heat treatment apparatus |
| CN102246290A (en) * | 2008-12-12 | 2011-11-16 | 芝浦机械电子株式会社 | Substrate cooling apparatus and substrate processing system |
| JP2012109333A (en) * | 2010-11-16 | 2012-06-07 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH07254538A (en) * | 1994-03-15 | 1995-10-03 | Toshiba Mach Co Ltd | Heat treatment device |
| JP2006222328A (en) * | 2005-02-14 | 2006-08-24 | Hitachi Kokusai Electric Inc | Substrate treatment apparatus |
| WO2008106520A2 (en) * | 2007-02-28 | 2008-09-04 | Semitool, Inc. | Single wafer anneal processor |
| TW200845279A (en) * | 2007-03-20 | 2008-11-16 | Sokudo Co Ltd | Substrate transport apparatus and heat treatment apparatus |
| CN102246290A (en) * | 2008-12-12 | 2011-11-16 | 芝浦机械电子株式会社 | Substrate cooling apparatus and substrate processing system |
| JP2012109333A (en) * | 2010-11-16 | 2012-06-07 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
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