CN107651706A - A kind of preparation method of bismuthic acid lanthanum nanometer rods - Google Patents

A kind of preparation method of bismuthic acid lanthanum nanometer rods Download PDF

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CN107651706A
CN107651706A CN201711070989.3A CN201711070989A CN107651706A CN 107651706 A CN107651706 A CN 107651706A CN 201711070989 A CN201711070989 A CN 201711070989A CN 107651706 A CN107651706 A CN 107651706A
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reaction vessel
lanthanum
sodium bismuthate
lanthanum acetate
alumina wafer
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CN107651706B (en
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裴立宅
林飞飞
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Shandong Ailan Pharmaceutical Co ltd
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Anhui University of Technology AHUT
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    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer

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Abstract

The invention discloses a kind of preparation method of bismuthic acid lanthanum nanometer rods, belong to technical field of nanometer material preparation.This method is specifically first to be well mixed sodium bismuthate with lanthanum acetate, then sodium bismuthate and lanthanum acetate mixed-powder are placed in the high-temperature region of alundum tube reaction vessel, alumina wafer is placed in the low-temperature space of alundum tube reaction vessel, and sealed reaction vessel, by high-temperature region be heated to 1100~1300 DEG C, low-temperature space be heated to 100~200 DEG C, 0.5~3h is incubated, has obtained the alumina wafer that white deposits are contained on surface；Then the alumina wafer is fixed among reaction vessel, is placed in reaction vessel and seals after sodium bismuthate, lanthanum acetate are mixed with water, in 300~500 DEG C of temperature, 24~72h of insulation.The present invention uses two-step reaction process, and preparation process is simple, easily controllable, and gained bismuthic acid lanthanum nanometer rods have a good application prospect in photocatalysis, absorption, lithium ion battery and SOFC etc..

Description

A kind of preparation method of bismuthic acid lanthanum nanometer rods
Technical field
The invention belongs to technical field of nanometer material preparation, and in particular to a kind of preparation method of bismuthic acid lanthanum nanometer rods.
Background technology
Bismuthic acid salt material has good physics and chemical property, in photocatalysis, optics, ultracapacitor, lithium-ion electric The field such as pond and electrochemical sensor has a good application prospect.Bismuthic acid lanthanum causes as a kind of important bismuthic acid salt material People widely pay close attention to.Chinese invention patent " lithium lanthanum bismuthate-based solid electrolyte material and preparation method thereof " (patent No.： ZL200910184915.1) disclose a kind of preparation method of lithium lanthanum bismuthate-based solid electrolyte material, such a method be according to Ratio weigh lithium, lanthanum, bismuth, lanthanum position dopant and/or bismuth position dopant nitrate or carbonate or chloride or acetate or After alkoxide or solvable oxide in acid are configured to solution, lanthanum salt solution, bismuth salt solution, lanthanum position are first added dropwise into lithium salt solution Dopant and/or bismuth position dopant solution, then addition citric acid and nitric acid obtain colloidal sol successively thereto, add water-soluble height Molecularly Imprinted Polymer forms gel, then gel drying is obtained into nanocrystalline powder, is then calcined and has finally given bismuthic acid lanthanum lithium Base solid electrolyte material.There are document (Y.Luo, X.Y.Liu, X.Q.Li, J.Cheng.PTCR behaviour of Ba2LaBiO6-doped BaTiO3 ceramics.Journal of Alloys and Compounds 452(2008)397- 400.) report shows to add Ba in barium phthalate base material2LaBiO6Afterwards, barium-titanate material shows typical positive temperature Coefficient (PTC) effect.
Although the report of bismuthic acid lanthanum sill is related at present, however, not up to the present being related to single-phase bismuthic acid also The bismuthic acid lanthanum of the report of lanthanum material, especially nano-grade size, such as bismuthic acid lanthanum nanometer rods.Different from large-sized bismuthates material Material, a kind of bismuthic acid lanthanum of the bismuthic acid lanthanum nanometer rods as one-dimensional nano structure, size is small, can be used as photochemical catalyst, adsorbent and Solid electrolyte material, there is good answer in photocatalysis, absorption, lithium ion battery and SOFC etc. Use prospect.
The content of the invention
For overcome the deficiencies in the prior art, it is an object of the invention to provide a kind of preparation method of bismuthic acid lanthanum nanometer rods.
The preparation method is as follows：
Step 1：Using sodium bismuthate, lanthanum acetate as raw material, alumina wafer is as deposition substrate, and argon gas is as carrier gas, first Sodium bismuthate is well mixed with lanthanum acetate, then the mixed-powder of sodium bismuthate and lanthanum acetate is placed in the height of alundum tube reaction vessel Warm area, alumina wafer are placed in the low-temperature space of alundum tube reaction vessel, and sealed reaction vessel, high-temperature region is heated to 1100~ 1300 DEG C, low-temperature space be heated to 100~200 DEG C, be incubated 0.5~3h, argon gas flow velocity is 20~50cm3/ min, so as to obtain Contain the alumina wafer of white deposits in surface.
The mol ratio of the sodium bismuthate and lanthanum acetate is 1:1.
Step 2：Contain the alumina wafer of white deposits as deposition substrate, sodium bismuthate, second in the surface that step 1 is obtained For sour lanthanum as raw material, water is solvent, and the alumina wafer that white deposits are contained on the surface for first obtaining step 1 is fixed on reaction Among container, be placed in reaction vessel and seal after then mixing sodium bismuthate, lanthanum acetate with water, in 300~500 DEG C of temperature, 24~72h is incubated, flocculent white deposit, as bismuthic acid lanthanum nanometer rods have finally been obtained on alumina wafer surface.
The mol ratio of the sodium bismuthate and lanthanum acetate is 1:1.
The sodium bismuthate, the gross weight of lanthanum acetate account for the 5~30% of water weight.
The compactedness that the sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 20~40%.
The principles of science of the present invention is as follows：
The above-mentioned preparation process of present invention use, sodium bismuthate and lanthanum acetate mixed-powder are in high-temperature region in 1100~1300 DEG C of quilts Gaseous state is heated into, and is decomposed into gaseous bismuth oxide, lanthana, sodium oxide molybdena, water and carbon dioxide, at high temperature gaseous oxidation Bismuth forms gaseous bismuthic acid lanthanum with lanthana reacted, and gaseous bismuthic acid lanthanum is 20~50cm in flow velocity3/ min carrier gas argon gas The lower low-temperature space reached positioned at alundum tube reaction vessel end is transported, the temperature of low-temperature space is 100~200 DEG C, in low-temperature space gas The bismuthic acid lanthanum of state is deposited on alumina wafer surface, by 0.5~3h sedimentation time, forms bismuthic acid lanthanum in oxidation aluminium surface and receives Meter Jing He, the alumina wafer that white deposits are contained on surface is obtained.Surface is contained to the alumina wafer of bismuthic acid lanthanum nanocrystal After being fixed among reaction vessel and sealing, reaction vessel is heated to 300~500 DEG C, water in reaction vessel causes There is higher pressure, the sodium bismuthate and lanthanum acetate in reaction vessel are at 300~500 DEG C of temperature and elevated pressures in container Reaction forms bismuthic acid lanthanum, and bismuthic acid lanthanum is deposited on the alumina wafer that bismuthic acid lanthanum nanocrystal is contained on surface under the drive of vapor On, the nucleus on alumina wafer surface absorbs the bismuthic acid lanthanum in atmosphere, and bismuthic acid lanthanum is result in the presence of temperature, pressure one The growth on direction is tieed up, as soaking time increases to 24~72h, alumina wafer surface forms the bismuthic acid with certain length Lanthanum nanometer rods.
Compared with prior art, the present invention has following technique effect：
1st, the present invention uses two-step reaction process, and preparation process is simple, easily controllable；
2nd, the present invention is using nontoxic sodium bismuthate, lanthanum acetate and water, and raw material and preparation process are environmentally safe, symbol Cyclization guaranteed request；
3rd, bismuthic acid lanthanum nanorod diameter of the present invention is nano-scale, and size is small, can be used as photochemical catalyst, adsorbent and consolidate Body electrolyte, there is good application in photocatalysis, absorption, lithium ion battery and SOFC etc. Prospect.
Brief description of the drawings
Fig. 1 is X~x ray diffraction (XRD) collection of illustrative plates of the bismuthic acid lanthanum nanometer rods prepared by embodiment 1；
According to JCPDS PDF cards, gained bismuthic acid lanthanum nanometer rods can be retrieved by oblique square La1.08Bi0.92O3.03(JCPDS Card, card number：46~0807) crystalline phase is formed.
Fig. 2 is SEM (SEM) image of the bismuthic acid lanthanum nanometer rods prepared by embodiment 1；
As can be seen from the figure product is by bismuthic acid lanthanum nanometer bar construction, a diameter of 30~100nm of nanometer rods, length 1 ~4 μm, the surface of nanometer rods is smooth.
Fig. 3 is transmission electron microscope (TEM) image of the bismuthic acid lanthanum nanometer rods prepared by embodiment 1；
As can be seen from the figure a diameter of 30~100nm of bismuthic acid lanthanum nanometer rods, the surface of nanometer rods are smooth.
Fig. 4 is high resolution transmission electron microscopy (HRTEM) image of the bismuthic acid lanthanum nanometer rods prepared by embodiment 1；
As can be seen from the figure nanometer rods contain clear and uniform lattice fringe, show bismuthic acid lanthanum nanometer rods by good Mono-crystalline structures are formed.
Embodiment
The present invention is described in detail below in conjunction with specific embodiment, but the present invention is not limited to following embodiments.
Embodiment 1
Step 1：Sodium bismuthate is well mixed with lanthanum acetate first, wherein the mol ratio of sodium bismuthate and lanthanum acetate is 1:1, so The mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high-temperature region of alundum tube reaction vessel afterwards, by 6 × 4cm of size alumina wafer The low-temperature space of alundum tube reaction vessel is placed in, and seals alundum tube, high-temperature region is heated to 1300 DEG C of temperature, low-temperature space is heated to 200 DEG C, 3h is incubated, argon gas flow velocity is 50cm3/ min, so as to obtain the alumina wafer that white deposits are contained on surface.
Step 2：The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed in reaction vessel Between, then the sodium bismuthate of water weight 30% will be accounted for, be placed in reaction vessel after lanthanum acetate mixes with water and seal, wherein sodium bismuthate Mol ratio with lanthanum acetate is 1:1, the compactedness that sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 40%, and reaction is held Device has obtained flocculent white deposit in 500 DEG C of temperature, insulation 72h on alumina wafer surface, prepare a diameter of 30~ 100nm, the bismuthic acid lanthanum nanometer rods that length is 1~4 μm.
Embodiment 2
Step 1：Sodium bismuthate is well mixed with lanthanum acetate first, wherein the mol ratio of sodium bismuthate and lanthanum acetate is 1:1, so The mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high-temperature region of alundum tube reaction vessel afterwards, by 6 × 4cm of size alumina wafer The low-temperature space of alundum tube reaction vessel is placed in, and seals alundum tube, high-temperature region is heated to 1100 DEG C of temperature, low-temperature space is heated to 100 DEG C, 0.5h is incubated, argon gas flow velocity is 20cm3/ min, so as to obtain the alumina wafer that white deposits are contained on surface.
Step 2：The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed in reaction vessel Between, then the sodium bismuthate of water weight 5% will be accounted for, be placed in reaction vessel after lanthanum acetate mixes with water and seal, wherein sodium bismuthate Mol ratio with lanthanum acetate is 1:1, the compactedness that sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 20%, and reaction is held Device has obtained flocculent white deposit in 300 DEG C of temperature, insulation 24h on alumina wafer surface, prepare a diameter of 30~ 100nm, the bismuthic acid lanthanum nanometer rods that length is 1~4 μm.
Embodiment 3
Step 1：Sodium bismuthate is well mixed with lanthanum acetate first, wherein the mol ratio of sodium bismuthate and lanthanum acetate is 1:1, so The mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high-temperature region of alundum tube reaction vessel afterwards, by 6 × 4cm of size alumina wafer The low-temperature space of alundum tube reaction vessel is placed in, and seals alundum tube, high-temperature region is heated to 1120 DEG C of temperature, low-temperature space is heated to 120 DEG C, 0.8h is incubated, argon gas flow velocity is 25cm3/ min, so as to obtain the alumina wafer that white deposits are contained on surface.
Step 2：The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed in reaction vessel Between, then the sodium bismuthate of water weight 7% will be accounted for, be placed in reaction vessel after lanthanum acetate mixes with water and seal, wherein sodium bismuthate Mol ratio with lanthanum acetate is 1:1, the compactedness that sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 22%, and reaction is held Device has obtained flocculent white deposit in 320 DEG C of temperature, insulation 32h on alumina wafer surface, prepare a diameter of 30~ 100nm, the bismuthic acid lanthanum nanometer rods that length is 1~4 μm.
Embodiment 4
Step 1：Sodium bismuthate is well mixed with lanthanum acetate first, wherein the mol ratio of sodium bismuthate and lanthanum acetate is 1:1, so The mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high-temperature region of alundum tube reaction vessel afterwards, by 6 × 4cm of size alumina wafer The low-temperature space of alundum tube reaction vessel is placed in, and seals alundum tube, high-temperature region is heated to 1150 DEG C of temperature, low-temperature space is heated to 130 DEG C, 1.4h is incubated, argon gas flow velocity is 30cm3/ min, so as to obtain the alumina wafer that white deposits are contained on surface.
Step 2：The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed in reaction vessel Between, then the sodium bismuthate of water weight 12% will be accounted for, be placed in reaction vessel after lanthanum acetate mixes with water and seal, wherein sodium bismuthate Mol ratio with lanthanum acetate is 1:1, the compactedness that sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 24%, and reaction is held Device has obtained flocculent white deposit in 360 DEG C of temperature, insulation 40h on alumina wafer surface, prepare a diameter of 30~ 100nm, the bismuthic acid lanthanum nanometer rods that length is 1~4 μm.
Embodiment 5
Step 1：Sodium bismuthate is well mixed with lanthanum acetate first, wherein the mol ratio of sodium bismuthate and lanthanum acetate is 1:1, so The mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high-temperature region of alundum tube reaction vessel afterwards, by 6 × 4cm of size alumina wafer The low-temperature space of alundum tube reaction vessel is placed in, and seals alundum tube, high-temperature region is heated to 1180 DEG C of temperature, low-temperature space is heated to 150 DEG C, 1.8h is incubated, argon gas flow velocity is 35cm3/ min, so as to obtain the alumina wafer that white deposits are contained on surface.
Step 2：The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed in reaction vessel Between, then the sodium bismuthate of water weight 16% will be accounted for, be placed in reaction vessel after lanthanum acetate mixes with water and seal, wherein sodium bismuthate Mol ratio with lanthanum acetate is 1:1, the compactedness that sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 27%, and reaction is held Device has obtained flocculent white deposit in 380 DEG C of temperature, insulation 45h on alumina wafer surface, prepare a diameter of 30~ 100nm, the bismuthic acid lanthanum nanometer rods that length is 1~4 μm.
Embodiment 6
Step 1：Sodium bismuthate is well mixed with lanthanum acetate first, wherein the mol ratio of sodium bismuthate and lanthanum acetate is 1:1, so The mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high-temperature region of alundum tube reaction vessel afterwards, by 6 × 4cm of size alumina wafer The low-temperature space of alundum tube reaction vessel is placed in, and seals alundum tube, high-temperature region is heated to 1210 DEG C of temperature, low-temperature space is heated to 160 DEG C, 2.2h is incubated, argon gas flow velocity is 40cm3/ min, so as to obtain the alumina wafer that white deposits are contained on surface.
Step 2：The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed in reaction vessel Between, then the sodium bismuthate of water weight 20% will be accounted for, be placed in reaction vessel after lanthanum acetate mixes with water and seal, wherein sodium bismuthate Mol ratio with lanthanum acetate is 1:1, the compactedness that sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 30%, and reaction is held Device has obtained flocculent white deposit in 400 DEG C of temperature, insulation 54h on alumina wafer surface, prepare a diameter of 30~ 100nm, the bismuthic acid lanthanum nanometer rods that length is 1~4 μm.
Embodiment 7
Step 1：Sodium bismuthate is well mixed with lanthanum acetate first, wherein the mol ratio of sodium bismuthate and lanthanum acetate is 1:1, so The mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high-temperature region of alundum tube reaction vessel afterwards, by 6 × 4cm of size alumina wafer The low-temperature space of alundum tube reaction vessel is placed in, and seals alundum tube, high-temperature region is heated to 1240 DEG C of temperature, low-temperature space is heated to 180 DEG C, 2.5h is incubated, argon gas flow velocity is 45cm3/ min, so as to obtain the alumina wafer that white deposits are contained on surface.
Step 2：The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed in reaction vessel Between, then the sodium bismuthate of water weight 24% will be accounted for, be placed in reaction vessel after lanthanum acetate mixes with water and seal, wherein sodium bismuthate Mol ratio with lanthanum acetate is 1:1, the compactedness that sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 33%, and reaction is held Device has obtained flocculent white deposit in 430 DEG C of temperature, insulation 60h on alumina wafer surface, prepare a diameter of 30~ 100nm, the bismuthic acid lanthanum nanometer rods that length is 1~4 μm.
Embodiment 8
Step 1：Sodium bismuthate is well mixed with lanthanum acetate first, wherein the mol ratio of sodium bismuthate and lanthanum acetate is 1:1, so The mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high-temperature region of alundum tube reaction vessel afterwards, by 6 × 4cm of size alumina wafer The low-temperature space of alundum tube reaction vessel is placed in, and seals alundum tube, high-temperature region is heated to 1280 DEG C of temperature, low-temperature space is heated to 190 DEG C, 2.8h is incubated, argon gas flow velocity is 48cm3/ min, so as to obtain the alumina wafer that white deposits are contained on surface.
Step 2：The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed in reaction vessel Between, then the sodium bismuthate of water weight 28% will be accounted for, be placed in reaction vessel after lanthanum acetate mixes with water and seal, wherein sodium bismuthate Mol ratio with lanthanum acetate is 1:1, the compactedness that sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 37%, and reaction is held Device has obtained flocculent white deposit in 470 DEG C of temperature, insulation 68h on alumina wafer surface, prepare a diameter of 30~ 100nm, the bismuthic acid lanthanum nanometer rods that length is 1~4 μm.

Claims (1)

1. a kind of preparation method of bismuthic acid lanthanum nanometer rods, it is characterised in that the preparation method is as follows：
Step 1：Using sodium bismuthate, lanthanum acetate as raw material, alumina wafer is as deposition substrate, and argon gas is as carrier gas, first by bismuth Sour sodium is well mixed with lanthanum acetate, then the mixed-powder of sodium bismuthate and lanthanum acetate is placed in the high temperature of alundum tube reaction vessel Area, alumina wafer are placed in the low-temperature space of alundum tube reaction vessel, and sealed reaction vessel, high-temperature region are heated into 1100~1300 DEG C, low-temperature space be heated to 100~200 DEG C, be incubated 0.5~3h, argon gas flow velocity is 20~50cm3/ min, so as to obtain surface Alumina wafer containing white deposits；
The mol ratio of the sodium bismuthate and lanthanum acetate is 1:1；
Step 2：The alumina wafer that white deposits are contained on the surface obtained using step 1 is used as deposition substrate, sodium bismuthate, lanthanum acetate As raw material, water is solvent；The alumina wafer that white deposits are contained on the surface that step 1 is obtained first is fixed on reaction vessel Centre, it is placed in reaction vessel and seals after then mixing sodium bismuthate, lanthanum acetate with water, in 300~500 DEG C of temperature, insulation 24~72h, flocculent white deposit, as bismuthic acid lanthanum nanometer rods are finally obtained on alumina wafer surface；
The mol ratio of the sodium bismuthate and lanthanum acetate is 1:1；
The sodium bismuthate, the gross weight of lanthanum acetate account for the 5~30% of water weight；
The compactedness that the sodium bismuthate, lanthanum acetate and water inventory account for reaction vessel is 20~40%.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110498682A (en) * 2019-09-12 2019-11-26 桂林理工大学 A kind of temperature-stable high-temperature ceramic capacitor dielectric material and preparation method thereof
CN110510662A (en) * 2019-10-11 2019-11-29 安徽工业大学 A kind of germanic acid erbium nanorod electrodes material and preparation method thereof
CN110526279A (en) * 2019-10-14 2019-12-03 安徽工业大学 A kind of germanic acid samarium nanometer rods and preparation method thereof
CN112892520A (en) * 2021-01-26 2021-06-04 南京大学 Lanthanum bismuthate composite photocatalytic material and preparation method and application thereof
CN113860367A (en) * 2021-10-18 2021-12-31 安徽工业大学 Praseodymium oxide/bismuth oxide/praseodymium bismuth oxide composite nanosheet and synthetic method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1962455A (en) * 2006-11-11 2007-05-16 广西民族大学 Process for preparing multiple ATO nanometer structure
CN101531362A (en) * 2009-04-17 2009-09-16 北京化工大学 Method for one-step growth of carbon nanotube by taking carbon composite as catalyst
CN101559921A (en) * 2009-06-02 2009-10-21 河南大学 Method and device for preparing tin dioxide nano-belt through vapor deposition
CN101857272A (en) * 2010-06-22 2010-10-13 浙江大学 Preparation method for micro-nano acicular structural KNbO3
CN102502833A (en) * 2011-10-27 2012-06-20 浙江大学 Method for preparing K3Nb7019 hexagonal sheet in micro-nano structure
CN104722314A (en) * 2014-10-04 2015-06-24 青岛科技大学 Preparation method of TiO2-cladded PbS TiO2/PbS double-layer composite nano tube array of
CN106093137A (en) * 2016-06-20 2016-11-09 吉林大学 A kind of based on α Fe2o3acetone gas sensor of multi-pore micron flower sensitive material and preparation method thereof
CN106984200A (en) * 2017-04-28 2017-07-28 中国民航大学 A kind of aircraft deicing waste liquid isolates and purifies the preparation method of film

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1962455A (en) * 2006-11-11 2007-05-16 广西民族大学 Process for preparing multiple ATO nanometer structure
CN101531362A (en) * 2009-04-17 2009-09-16 北京化工大学 Method for one-step growth of carbon nanotube by taking carbon composite as catalyst
CN101559921A (en) * 2009-06-02 2009-10-21 河南大学 Method and device for preparing tin dioxide nano-belt through vapor deposition
CN101857272A (en) * 2010-06-22 2010-10-13 浙江大学 Preparation method for micro-nano acicular structural KNbO3
CN102502833A (en) * 2011-10-27 2012-06-20 浙江大学 Method for preparing K3Nb7019 hexagonal sheet in micro-nano structure
CN104722314A (en) * 2014-10-04 2015-06-24 青岛科技大学 Preparation method of TiO2-cladded PbS TiO2/PbS double-layer composite nano tube array of
CN106093137A (en) * 2016-06-20 2016-11-09 吉林大学 A kind of based on α Fe2o3acetone gas sensor of multi-pore micron flower sensitive material and preparation method thereof
CN106984200A (en) * 2017-04-28 2017-07-28 中国民航大学 A kind of aircraft deicing waste liquid isolates and purifies the preparation method of film

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
L.Z. PEI ET AL.: "Calcium germanate nanowires by vanadium doping with improved photocatalytic activity", 《JOURNAL OF EXPERIMENTAL NANOSCIENCE》 *
MENG-YEN TSAI ET AL.: "Water-Driven Formation of Luminescent Zn2GeO4 Nanorods from Zn-Containing Ge Nanoparticles", 《AMERICAN CHEMICAL SOCIETY》 *
裴立宅等: "一维锗酸盐纳米材料的合成及应用", 《材料工程》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110498682A (en) * 2019-09-12 2019-11-26 桂林理工大学 A kind of temperature-stable high-temperature ceramic capacitor dielectric material and preparation method thereof
CN110510662A (en) * 2019-10-11 2019-11-29 安徽工业大学 A kind of germanic acid erbium nanorod electrodes material and preparation method thereof
CN110526279A (en) * 2019-10-14 2019-12-03 安徽工业大学 A kind of germanic acid samarium nanometer rods and preparation method thereof
CN112892520A (en) * 2021-01-26 2021-06-04 南京大学 Lanthanum bismuthate composite photocatalytic material and preparation method and application thereof
CN112892520B (en) * 2021-01-26 2022-04-22 南京大学 Lanthanum bismuthate composite photocatalytic material and preparation method and application thereof
CN113860367A (en) * 2021-10-18 2021-12-31 安徽工业大学 Praseodymium oxide/bismuth oxide/praseodymium bismuth oxide composite nanosheet and synthetic method thereof
CN113860367B (en) * 2021-10-18 2023-03-28 安徽工业大学 Praseodymium oxide/bismuth oxide/praseodymium bismuth oxide composite nanosheet and synthetic method thereof

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